SCIENTIFIC ABSTRACT VOLKENAU, N.A. - VOLKENSHTEYN, F.F.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001860510016-3
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 9, 2001
• Sequence Number: 16
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

AUTHOR: Nesmeyanov, A. N., Academician 20-3-26/59
Volikenail, 11. A., Villchevskaya, V. D.
TITLE: Intramolecular Acylation in the Ferrocene Series
(Vnutrimolekulyarnoye atsilirovaniye v ryadu ferrotsena).
The Cyclization of 2r-Ferrocenyl Substituted Acids and
Ketoacids (Tsiklizatsiya 31-ferrotsenilzaineshchennykh kislot
i ketokislot).
PERIODICAL: Doklady AN SSSR, 1958, Vol. 118, Nr 3, Pp- 512-514 (USSR)
ABSTRACT: This kind of acylation was proved by the authors in the
ferrocene series (ref. 1). The present work is ah extension
and continuation of it. By interaction between ferrocene and
the anhydride of chlorine of P-carbometoxypropionic acid
P-carbometoxypropionyl-ferrocene was produced and from this
P-carboxypropionyl-ferrocene. With the latter substance no
cycle could be formed by the action of polyphosphoric- or
sulfuric acid. Then it was reduced to 63-carboxypropyl-
ferrocene according to Klemmensen. This was easily oycli8ated
by heating with polyphosphoric acid. On this occasion keto-
hydro-indenyl-cyclo-pentadienyl-iron was formed. Its structure
Card 1/3 was proved by: 1.- The production of a derivative after the

Intramolecular Acylation in the Ferrocene Series. 20-3-26/59
The Cyclization of rl-Ferrocenyl Substituted Acids and Ketoacids
ketogroup; 2,- Bromination which lead to pentabromo-
cyclopentan, that is to say a non-substituted cyclopenta-
dienyl-rina was proved in the molecule; 3.- The
infrared spectrum (1008 and 1106 cm-1). ~`urthermore the
cyclization with o-carboxy-benzoyl-ferrocene was
investigated. Contrary to the ferrocenyl substituted keto
acids of the aliphatic series o-carboxybenzoylferrocene Can
easily be cyclisated with polyphosphoric- and concentrated
.sulfuric acid. On the same conditions this occurs also with
o-carbometoxybenzoylferrocene. Thus a complete analogy with
benzene derivatives is observed. As is known benzoyl-
propionic acid can not be cyclisated while o-benzoyl-benzoe
acid easily forms anthraquinone with simple heating. The
results mentioned above prove the final conclusion (ref. 1)
that ferrocenyl substituted carboxylic acids are subjected
to an intra-molecular acylation and this in the same
cyclopentadienyl ring which already contains a substituent.
The same applies even for the o-carboxybenzoyl-ferrocene in
which this ring is already somehow deactivated by the CO-
Card 2/3 group in it. P-carboxypropionyl ferrocene can not at all be

Intramolecular Aoylation in the Perrocene Series. 20-3-26/59
The Cyolization of 11-Perrocenyl Substituted Acids and Ketoacids
cyclisated. The reason for this has still to be found.
An experimental part with the usual data follows.
There are 4 references, 3 of which are Slavic.
ASSOCIATION: Institute for Elementary-Organic Compounds AN USSR
(Institut elementoorganicheskikh soyedineniy Akademii nauk
SSSR).
SUBMITTED: August 10, 1957
AVAILABLE: Library of Congress
Card 3/3

.M. I- VOT t V N--JU, 11. A. ; BN E" OVAy T. N.
NEST-IM"PBOV, A.!!.,, a~ade I I IE
of ferrocene with sjjbstltii-.ed
Dokl. AIT sSsR 166 no.3:607-610 ja 166.
1. Institut clementoorganichesk1kh soyedineni.y AN
July 22, 1965~

L 42145-65 EPF(c)/FNP(J)/EWT(m) Pc-4/Fr_4 RM~ 11601000 3~rf/l 5361
,ACCIMICO IM: AP5007661
ALMIORSt ITe-emeyraiov, &. N. (A*ademician); V011konau., N. A.f Shilarte"Ve., L. So
NIMLE: Ebcchange of the ligand in replaced ferrocenes
-ISOUSICE: AN 353R. Doklady, v. 160, no. 6, 1965, 1327-1530
TOPIC-TAGSt-lerropenot ~igand# iodine, borate
JABSTRACT: The authors'earried out:rieuctio-na- of imono- P~Id ItI'-dic~ttby3XerrOOs%_raxj,
benzene and mes:tylene, of mono- and 1,11-diacetylferroceiie with meaityl-Ine,
fand. of monocyano-1. monophenyl-p and 1, 11 -dipherWIferrocene swi th benzene. As a
iresult, they obtained a number of cations in the form of tetra:phenylboratesy
ltetrafluoroborat,s, and iodides. The decomposition temperature and melting points
iwere determined for these compounds and were found to depend strongly on. the rate of
,heatime. The data obtained indicate that the substitutes in the ferrocene nucleug
-have a strong influence on the exchange of liquids. In the reaction with mea-itylenef
:at 90-100C, 1,1'-diethylferrocene formed 32,4 etbylcyclopentadienyl-meait-.ylene iron,
e
Terra ielded 20% cyclopentadienyl-mesitylene iron, and 1111-diacety-Iferrocene
710-7a
y-ielde cetyloyclopentadionyl-meoitylene iron. At 120-130C the diethylferrocene;
.fraction increaaad to 39% and the dis-cety1ferrocene to 22%. At 50C diacet'l-forro-
,cene did not react with mesitylene, and dietylfarrocene formed only- 9~
1/2

42 45-m65-----
X
dc8sSI(S NR'I AP5M661
lethylcyclopentadi Ier tyl-mesitylene- iron. Interaction between adetyl-ferrocene and
kesitylene, yielded a mixture of acetyloyclopentadiezWl- and cyalopentaAiezWl-
mesitylene iron. these could not be separated chromatographio&lly. Practional
~arystallization showed the coniant of the firat to be 80-9CFp". these regults athow
f
,:thl-Lt for monoalkyl-ferrocene the aubatituted ring is oxchanged chiefly, but for
,mon-D-acetylferrocene exchange in with the unsubstituted ring. Ori6,. &rt. has- I
'table.
!AS"30CTATTORt Iustitut elementoorgani Icheakikh noyedinenlif Akgdemii nauk: SEL9R
'(L-istitute of Hete-ro-Organic Compounds, AcaduW of Scienoes SSSR)
IN!

s/020/63/149/003/02,~/026
Ligand exchangein ferrocene B117/Bla6
0
237-5-238-5 C. The reaction with naphthalene takes a similar course.
The ligand exchanee reaction also takes place for substituted ferrocenes-,
~:_but is more :complicated'..than.with ferrocene., Heating diacetyl ferrocene
:with mesitylene',in the presence of. A101 the.tetraphenyl borate of
3
0
masitylonell~6.cetylcyclopentadienyl iron:. C H OBFel m.p. 197-191) C
40 39
0
ecompositi6n point 199-200 C).:_ The,compounds producedare crystalline$
ellow tojight orange, highly 6oluble in acetonei dichloro ethane,
'y
and benzene,
-acetonitrilep.insoluble in alcohol, qther AS s0lidI3 they &I~e
-,resistant-to atmospheric oxygpn.,,Decomposition, which soon occurs.: in
..organic solvents, is.accelerated by light. Cations of the area-cyclopent
a
dienyl iron are fairly resistant'to acids. The synthesis of iodides of
benzene-cyclopentadienyl, iron is described, it produced the following
nds: benzene-ayclo
-,COMPOU pentadienyl,iron triiodi,de,-vio:Let-red.c)ryi3t&ls,
d 270C-:
Ocomposition point.226-2 A black polyiodide of undeterminod iodine
rwritent forraedIn the.presence of-iodine and KI (10). 'Et was converted
into triiodide-by.alcoholic KI as well ao'by-roduotion with a smaller
"-:'amount-of Na2S.0 Energatic,reduotion,of polyiodide and. triiodide produced
~3
:benzene-eyclopentuadienyl iron-iodide: 0 R Fell yellowicrystale,-soluble 1
QaMd -2/3-

NESMEYANGVp A.N.; VOLIKENAUv N.A.
Some chromium arencarbonyls. Izv. AN SSSR. Otd. khim. nauk no.2:
367-368 F '61. (KU?A 14:2)
1. Institut elementoorganicheak-ikh soyedineniy AN SSSR.
(Chromiua carbonyl)

NESME*OV, A.N., akademik; VOLIKENAU, N.A.; F
,PLESOVA, I.S.
Exchange of ligands in ferrocene. Dokl.AH SSSR 3:49 no.3s
615-1618 Mr 163. . (MIRA 16:4)
1. Institut elemento ani-cheskikh soyedineniy AN' SSSR.
(Fe Oej (Complex compounds)

VOLIKENAU, N.N., agronom, kand. nauk, red.VOLKOVA, M.I., a.t. red,
(Collection of research papers on apriculturel 51bornik
nauchno-isaladovatel'skikh rabot po nallakomu khoxiaistvu.
Toms, Izd-vo Tomskogo univ., 1962. 89 p. (MIRA 16:3)
1. Tomskaya gosudarstvennaya sellskokhoz-yaystvennaya opy-tnaya
stantsiya.
(Tomsk Province-Agriculture)

S!I -`IqT N "n s,
1 A. Enj-~.
2. IJ'--',SR (6-00)
4. Electric Lines
7. insulation sttin-_"ards for 110-220 kilovoli. electric t-ansmisri~-n lines on metal suppcrts.
Elek. sta. 23 Elo. 2, 1953.
9. Monthly List of Russian Accessions, Library of Congress, June 1953. Unclassified.

t
-V '0' if
Subject USSRAlectricity AID P - 2359
Card 1/1 Pub. 27 - 23/30
Authors Vollkenau, V. A. and Gershengorn, A. I., Engs.
Title Certain characteristics of super-high voltage electric
power transmission lines (Review of foreign periodicals)
Periodical Elektrichestvo, 5, 82-83, MY 1955
Abstract The authors summarize an article by R. G. Wolff in Modern
Power Engineering, v.47, No.2, 1953. Three tables, 1
reference.
Institution: None
Submitted ; No date

I - -. -_- I I__ -- I~11 _ X_~A_ .
VOLIKEIM, V.A., inzhener.
I-
Cutting off small currents with high-voltage circuit breakers.
Elektrichrstvo no.2:84-86 F '56. (XLRA 9:5)
(Zlectric circuit breakers)

Z/019 0 '/o'05
D006.YD1601/2018-/ 2l'/W=
AUTHORS. Bezrukov, F. V., Volken-au, V. A., Gilkin, Yu. P..,, et al.
TITLE: Standard series of basic parameters of tube lightning-arresters
V "I
PERIODICAL: Prehled technicke/ a hospoda'T~ske literatury, Energetika. a elektro-.
technilca., v. 18, 1961, no. Ill 504, abstract # E 61-6968. Ve!;tn.
Elektroprom. 31, December 1960, no. 12, 27-31
TEXT: The article presents a revi-ew of lightning-arrester types currently pro-
duced in the USSR, and lists additional types for 6 - 220 kV and 35-720 kV which
should be produced. The original article contains 6 tables. f.:Abstracter~_,: notei
The above text is a full translation of the Czech abstraco.
Card 1/1

PMJZRTNINA-GRANOIJSKAYA, V.I., kand.fiz.-matem.nauk; VOLIKENAD, V.A., inzh.
Dependende
of lagging voltages in a discharger on the length of
current wave front. Elaktrichestvo no.10:53-54 0 161.
(MIRA 14:10)
1. Vsesoyuzrry7 elektrotekhnicheskiy institut im. Lenina.
(Electric protection)

S/196/61/ooo/oOq/o4O/O52
E194/E155
AUTHOR: Vollkenau, V.A.
TITLE: The impulse transmission capacity of carborundum
PERIODICAL: Referativnyy zhurnal, Elektrotekhnika 1 energetika,
no.9, 1961, 39, abstract 91 248. (Vestn. elektroprom-
sti '/no.4, 1961, 48-51)
TEXT; To increase the current-carrying capacity of the
resistances in arresters, powder of electrical grade carborundum
(SiC) was studied to find how grain size, carborundum grade,
compressive forces acting on the grains, and methods of filling
the spaces between grains, affected the current-carrying capacity.
It is recommended to use coarse-grained high-electrical resistance
grades of carborundum in water. It is noted that increasing the
gas pressure in the pores between 0.1 and 10 atm increases the
curvent-carrying capacity under short transients and reduces it
under long; in gases of low electric strength the capacity under
short transients is reduced but remains unchanged under long
transients. Alteration in the mechanical pressure or
granulometrf!!~ composition has little effect upon the non-linearity
Card 1/2

The impulse transmission capacity... s/196/61/000/009/040/052
E194/E155
of the powder. The curvent-carrying capacity of the powder under
short transients is considerably higher than that of 'Vilit' and
'Tervitovt discs made of this powder. For all methods of
application, increase in the electrical conductivity of the
carborundum powder increases the current-carrying capacity.
6 figures. 10 literature references.
[Abstractor's note;
Complete translation.3
Card 2/2

VOLIKENAU, V.A., inzh.; GALKIN, Yu.P., kand.tekhn.nauk
Types of tubular and valve-type a.c. dischargers. Vest.
elektroprom. 33 no.5:79-80 My 162. (MIRh 15:5)
'(Electric protection)
(Electric power distribution-Equipment i3nd supplies)

VOLIKENAU, V. A.
" Conductivity of Carborundun."
Dissertation defended for the degree of Doctor of Technical Sc~.ences,
at the All-Union Electrotechnical Institute., December 1962.
Moscow, Elektrichestvo, No.9 Sept pt) 9h-95.

L 2Za�Z-66 aV1)/FCC
ACC NR: AP6006728 SOURCE CODE, UR/0297,/65,(000/011/,0033/0035
AUTHOR: Vollkenau, V. A. (Candidate of technic*al sciences).
ORGY: none
TITLE: Quality teats of valve-type lightning arrester~_
SOURCE: Elektrotekhnika no. 11, 1965, 33-35
TOPIC TAGS: lightning, lightning arrester
ABSTRACT: Existing Soviet standards on testing h-v lightning -arre ste r materials
(tervit) have allowed the -high probability that a considerable number of defective disks
may remain undetected. It was experimentally found that one defective clis): in the
arrester unit caused (in 80-900/6 of cases) breakdown or flashover of the entire unit
(which consisted of 3 parallel stacks, 8 disks in each). Hence,, measures to improve
testing methods were taken: a probability distribution curve for test-destroyed disks
wa determined, integral probability curves (0. 0 1 -sec current surge, 20 discharges)
we:e plotted; a curve* of guaranteed current -carrying capacity vs. variance was
plotted; and heavier tdot'currents were assigned. These steps enhanced the reliability~
of the quality-control process. Orig. art, has: 3 figures, 4 formulas, and Z tables.
SUB CODM. 09 SUBM DATE:
Card I I
none
UDC: 6Z1.316.93306

VOLIKENAU, V.A., kand.tekhn.nauk
Control tests of valve-tYPe dischargers. Elel:trotekhaika
36 no.11:33-35 N 165. (MIRA 16:11)

KOMAR, A. P., VOIXENS, N. V.
Relation of the Coercive Force and of the Magnetization of' N'3 Mn Alloy
to the Degree of Order of Atomic Distribution. MTF 11., 7232 1941.
Institute of Physico-Chemical Analysis 16, 105, 1943.

s/196/61/000/009/008/052
E194/EI55
AUTHORSs Vollkenshteyn, A.A., and Gavanin, V.A.
TITLEs The photometric characteristics of vacuum photocells
Illuminated by impulse lamps
PERIODICAL: Referativnyy zhurnal, elektrotekhnika i energetika,
no.9,' 1961, 5, abstract 9V 35. (Svetotekhnika, no.2,
1961, 12-18.)
TEXT. Vacuum photocells are often used in the photometry of
impulse lamps. With impulse illumination the level of
luminosity on the cathode may be higher than that at which
anomalous effects occur in the operation of the vacuum photocell
with constant illumination. This is attributed to formation of
a space charge, to the low conductivity of the light-sensitive
layer, and to secondary electron emission. The flash duration of
-various types of Impulse lamp varies from fractions of a micro-
second to thousands of microseconds. For the same illumination
(candle-seconds) the instantaneous luminosities from such lamps
differ by several orders. In the photometry of impulse lamps the
t7l.,pe a--F' vacuum photocell and its operating conditions must be so
Card 1/2

gi?1-11-, 11.-M. .-.. MMIIM 'It mm~~
The photometr-ic characteristics s/196/61/'000/009/008/052
E194/EI55
selected that anomalous effects do not occur within the range of
measurement, Therefore a linear relationship should be
maintained between the light magnitudes which govern the
tonditions of Illumination of the photocell (the amount of
illumination, the peak or mean*illumiAance during the flash time)
and the electrical values which characterise the passage of
,current in the photoelectric cell circuit during the flash
(the quantity of electricityq the peak value of the photo current).
The characteristics of vacuum photocells are given in the form
of graphs and tables.
8 figures, 3 literature references.
fAbstractorls-.nc e:
Card 2/2
Complete translation.]

VMIKENAUj VA., inzh.
Dea~for controlling and testing the elmamts of valve
dischargers. Elaktrotekhnika .14 no.1002-73 0 163.
(MIRA 16:-11)

0 lot 0J.0
I T v 10. t of ?, OM lot it SO a M v W
I If
-A JL L
J_j 'M
GOVIRS
PROCCISIS A40 -scrial't
of
'jhotometrl measurements at low brightnosses.
00 is c
A. A, 'kLu*htrin atid A. A. GrOttits. P~-kLidv Akad,
X.;uk S.S.S.R. 66, 503-6)(1919). -- III tivAsog
istements of low brightnesft-s. the following hould be oft. -00
.wrvecl: (I I if shmild be drtd. fimt whether the photometer
oo il And gradmilvil (;w nica,orivil brighttie-i .,r
00 iu tt'C~4'41611K c,pliv bticht1j", "f
I.b.a."IwIrr '11'whl It, li'M
00 in %%)it, h the c,ptail-itimi A tile I.h,o-twirw tu-M, 1, 0.- -00
ulttvd by VIL111jillf; fit,- I'livIll1tv" '.f ih, it% I'l of , "14'p
00
min of the phoinivirter Abilc the briKhttics~ (if Ibe 11tv.-
lat"I light k flot chaout'l -Intills the "n't
ill "Icamitilig brightlic's. a I'll"t .... 1,-tcr '011 mly 'v'-
00 00
..fit of C'111.1fit.,fl"ll "I Oc 1.11.0moctrl'. fi, Id, IK- o-d
1,111 it Ph"Uhl I- grmill'it"I ag.till't light ,I Ow lift, 400
tril ~)pn. as tli.at twing Its mr.-uring flic
00 rclative valtlv~ of Inightnc~ of liglit td .611 irbitrary Wit zoo
-spual (for:ill d-ottij,tr.tlivv 0
09 p) 01011ICtCTS %hOUIII IM! U-All it) WhiCh the light WI-SUCC k zoo
I
S btahml by ilecrea~htg the brightnc,4 of the ine-Asure'd light 3:0 0
while the brightness of the inn" field of compirium I% flit. 0
changed. It. Z. Kainich
i;0 o
Zoo
No*
t!O 0
flog
OCTAWIRCICAL LITINAURE CLAIJIFICATIC"
e. a ------ ...... "1010
A
Rick$ 11.1110". it*
I
00
q It a A I ti 0 1 W of a a 3 a
0 U IN AV 00 15 19 K' I; It 11, it a IT It Or KW n x4
, I 1A An
41, 0 0 0 a 0 0 * 0 0 0 0 0 * 0 & 0 0 0 0 0 0 0 * 0 0 0
I* a **go* 000 0 go 000 0 0 0 0.2-2j" 2 lb***-Ooo 4600 0 00-00 0 0

UUMtVIPAicito - Visim, RMiologr IUj 49.
,4, Medicine - Liieftts,, Erfects
"Manges in Spectral Sensitivity of -the
Daring'Short-Duratton 311unination,' A. A. Vol-
.13anshteyn., State OIP~ Inst., 3 PP
SSSR! Vol LVI, No 2
TIoual receptim of flashes of white light his
bien studied in detail by various authors, and
Mults of their investigations have proved
&JOVIicable to solution of Iractical problenso
Aotim of a colored flash on the eye has been
GtVAied in ymn papers., but experimental data
.Obtainecl leads to contradictory conclusions.
AMP -52/49T89
VSR/Mediclne - Vision Physiology May 49
(Cmtdi
Deeloribes experimnts to determine minimum. illuni-
ration., coreated by point flashes of a m,onochro-
=tic light source, at which an observer can see
the li&t from this source. 39tablished that
character of dependence of eye s=sI:ttvity on wave
length ebanges. during tranattiaa-trom- prolonged-
.~o ahort-duration, illumination.. Subirdtted by
Aoad A. N. Terenin, ii mar 49.
~52/49T82

V0LX1,-,NS1iTEY11j A-.--A-. PA 24CIT105
USSR/Physics Light measm~~!kment Dee 52
"Optical Method of Measuring Intensity of Light,
Brightness and xllux," A. A. Volkenshteyn, D. I. An-
dreyev and V. I. Isayenko
"Zhur Tekh Fiziki" Vol 22, No 12, pp 2026-2037
Optical measuring method was tested theoretically
and experimentally. Results showed adequate ac-
curacy of measurpments. The equipment may be used
An plants and on expeditions. Received 22 Sep 52.
2_4ceio5

VOLIKENSHMN, A.A., kand.tokhn.nauk
In regard to S.G.IUrov's article "General scheme for the con-
struction of photometric magnitude systems." SvototekhnikiL 5
no.9:26-28 s '59. (141RA 13:2)
1. Goaudarstvannyy opticheakiy inatitut.
(Photometry) (Wrov. S.G.)

-7- f

A. VoOrmtoo-c Zh.
s R radAc of lotle Weititev. &
"
) L-
fekb. F1:, 24~ No, 4. C-22-36 (19
T,-m prahkm hi pr--,ti=1 P1-ot't*1m-'L-> ;~ Oftej,
complicated by thd ji-flicullias introd=4 bv CO(OU7

In tho low br!ahtmm r;jpgc. It b lmjvrjal~;. cu rct4x,
ph(Acyantric racit3umnDenli tit difticnt to
nth-~r withcu, a 11toic or kmi artirl'-jit, -'41vj1jr%j
for CuHbr!-~t'* '7' and tho C'mablish mot of so"a R
suindartl in-Vs4f has to take th~- spwai scmitivity
q of tho cyo Into account, Tho latter is diftmit 11tv
-larmal and *cry low light levch, ai mpre-anted by
;two diittnct ~-,sta-,Ward Ccrtafn-
conditinas hoo-P-110 Id bo oliscrmi In this evattl4h.
b=hvc
ment of optical equillibdurn &n ft cm~mal and
InL-mal m(liant fit[di ta be compared. o.~, that tho
diaincler af Ote exit pupil of tho (murumect mmt not
W sinallcr (twa tho diam.-mr of tho ob-sclwe!i pupil
In dark ati-apta(lon (S mm). Equivalent briahmm.
.curvo -v. siand-ard hunInancq. can bc-obtilnoc~ for.
!
7 .
various e0burs it, the cturm of spwtral tr ansinfuslon
of tht filtm =d and of the spWmi RLioroflan of
Om m.-mi of h3ht urc aveflabla. Tbc~, speciral
~Yamrnhdollcvrmi Ofm4filtavi ar*UVA 1101, "WaInIdg
ttk~-Ir cquivii1cm tranpm4soon O-Mza to
~dlff= ~.% In tho angular of th-0
[humuin cyc to Mativo btfghta-~U

'h4pc4 and d1irm-milonst 011 (phoirp-11cultmo
(ho opti,
Ac!d4 ac a66 morc foomibla than Ibibcm,

VOLIKENSHTEYN.A.A., kandidat tekhnicheskikh nauk; TARKHOVA.,A.A.,
inziteiner-
New photometer track. Svetotekhnika I no.1:19-21 F 155.
(MIRK 8:9)
1. Gosudarstvennyy opticheskiy institut
(Photometry)

VOLIKENSMYN,A.A.. kandidat takhnicheakikh nauk
Photometer for the measurement of low intensity brightness.
Svetatekhnika I no.4:1-4 Ag 155. (KLRA ~1:9)
1. Gosudarstvannyy opticheskiy institut
(Photometry)

VOLIKIgNSHTSYN.A.A...kandidat tekhnicheskikh nauk
--, 4 ---, ~-, !- - --.11 ~. I ~ - -
Calculations in the field of low intensity brightness. Svetotekhnika
1 no.5:7-11 0'55. (MILRA 8:12)
1. Gosudarstvennyy opticheskiy institut
(Lighting)

L /-j,
'
/
-

USSR/Physics S ' 0
FD-311
C
6p
Card 1/1 Pub. 151, 15/24
Author llol'kenshteyn, A. A.

Title Addition of small brightnesses,
Periodical Zbur. tekh. fiz., 25, No 6 (June), 1955, lioo-11o4
Abstract The author experimentally shows that under the conditions of the
conducted experiments the special law of the addition of equivalent
brightnesses is observed within the limits of errors of measurements
~or an extensive regi,.~n of small brightnesses and for light of various
spectral composition. He thanks M. I. Golland, Ye. I. Dikan', P. P.
Zakharov, and Ye. 0. Fedorova for their help. Six references: e.g.
A. A. Vol'kenshteyn and D. I. Andreyev, Probl. fiziolog. optiki, 8,
55-68, 1953; S. G. Yurov, Probl. fiziolog- Opt-, 10, 59-62, 1952.
Institution
Submitted September 8, 1954

GIMSHUN, Audrey Aleksandrovich; 7 - NSHEM,.-L".; GURTf ICH, M.M.;
5k,ZAHW, D.N.; FXDOR07A, YO.O.; ORLOVA, L.I.P red.;
SUU, P.G., tekhn. red.
[6elected papers on photometry and illuminating ongineering]
Irbranrqe trudy po fatometrii i evetotekhnike. X)skwa, Goo.
izd-vo fiziko-matematinhookoi lit-7-v, 1958. 548 (MIRA 11:9)
(Photometry (Lighting)

V(,T.IKI,:NSHTEYN, A.A., kawl.takhn.nauk, KOVAIDIN, ll~*,.V,, Inzh.
Photometric e7aluation of directed light impul3es. :'Y:-. '!:~4-cp-hnfk a
10 no.2:15-17 F 164. 17i4)
1. Gosudarstyennyy opt-'cheskiy institut.

L 07049=~,7 L-Vi T (I - WP(k) . IJP(c) WG'IGG
!-A%-%; N9, 7W6027.128 SOURCE COM UR/033-1/6()'/000/006/0022/0024
'AUTHOR: Vollkensht-eyn.,,A. A. (Candidate of technical scienceft);_Kqj~r~_qy, V. P.
(Engineer); Kuvaldin, E.' (Engineer); Matveyeva, 0. K. (Engineer); Sazonov, V. M.
(Engineer)
ORG: None
TITLE: Photometric equipment for1pulsed light sources
SOURCE: Svetotekhnika, no. 6, 1966, 22-24
TOPIC TAGS: photometer, light pulse, laser pulsation, flash lamp
ABSTRAM A unit for photometric measurement of 17 pulsed light sources is described.
This unit consists of three inst uments: an FIL7photometerpfor flash lamps, an F7.1L--d
meter
photometer for lasers and a KOSFstandard light pulse enerator The FIL photo,
may be used for measuring nearly all types of industrial flash tubes &-tirl the R,,L-m is
used for measuring the radiation frora free-emission lasers. lj,!~The KOS instrument gene-
rates reproducible standard light pulses and is used for calibration c,C the two photo-
meters. Photographs of each of the component instruments are given tcgrether "with
brief descriptions. The flash tube photometer may be.used for meastxing the luminous
intensity of a light source with a maximum transverse dimension of 11C =. The funda-
mental scale of the instrument.has graduations of 100 candles/div, 10-5 nito/div and
Card 1/2 _UDC:_ 5-35.242.2

L 07949-67
ACC NR: AP6027128
-3
1
0 P-a-sec/div. There graduations Ynay be expanded by five o:rders of nao"nitude for ti
measuring higher intensities by chringing the resist,"ce of th-a load on the photocell
or by u.~;ing neutral ligi,'f, filters. The time characteristici; if the instrument are:
least resolved duration of the lead-ing, front. -- 5.".() 7 r
-1 (!C, pLilse durat'lon -- no mor
than 10-2 see. The approximate value of a graduation on Wic 1,141--in pho!,ollieter is 10 w
and 1.0 " Joules per unit of -the reference scale. The upper, limits of r.easurement are
103 w and 103 joules. The unit may be used for laser measurements in the 400-1100 MVI
spectral region. The time resolution of the photocell is a few tenths of a microsec-
ond. The KOS instriwent gencraLes pulaen with a duration of approximately 3 lisec
and a luminous intensity of 200,000 ca. The autbors consider it their plenonnt duty
to mention the considerable part played by 11. F. Shipull, L. I. Mel'ni"'Zova, R. V.
ITsyvkin, V. M. ShDanIkov and V. N. Kornilov in development ol' this photometric equip-
Iment. Orig. art. has: 3 ~igu-res.
SUB CODE: 13, 20/ SUBM DATE: None/ ORIG REF; 005

-VOLIKhlizMEYL, Andre7 Aleksandrovich; GO~IIODINSYIY, G.M,,,
- -z"-- - -VLM.., red.-
[Visual low-brightness photometi-j] Viziiallnaia fotcmetriia
vialykh inrkostoi. Moskva, Enorgita, 1965. 141 :.,j.
(14IRA 18,,4)

.' - .0-
VOLIKEIZHTEYN., A.A.3 GORODINSKIY, G.M.,- GUREVICII, M.M.; GIMIMCH., N.N.;
KOZLYANINOV, M.V.Y- LVAREV, D.Na? 107ITnis I.B.T,
MHKOV, V.V.j- POPOV, 0.1.- SAMSOINOVAS V.G.
- Andrei Aleksandrovich Gerehun. Svetotekhnika 8 no,12al-3 D 162.
(IURA 16 al)
(Gershun, Andrei Aleksandrovich)

VOLIKENSHTEY14, A.A... kand.takhn.nauk; GAVAITIN, V.A., inzli.
Phoiothermal characteristics of vacuum phototub--s vith Illumination
by-flashtrons. Svetotekhnika 7 no.2:12-18 F 161. MIRE 14:10)
1. Gosudarstvennyy optichesiciy institut i Moskovskiy elektrolampovyy
zavod.
(Photoelectric cells)

S/196/62/000/'012/008/016
T /* E19VE155
AUTH(jR: Vollkenshteyn,.A..A. -
TITLE: An optical method of increasing the contrast on
cathode-ray tube screens
PZ'~I. 10 D I CAL: Referativnvy zhurnal, Elektrotekhnika i energet1ka,
no.12, 1962, 2, abstract 12 V10. (Svetctelchnika,
no.2, 1962, 17-20)
TZ,XT: The visibility -of an image on a screen of a cathode-
ray tube may be improved by increasing the contrast. between the
image and background by mcalis of a light filter fitted between
the observer and the screen. The table gives calculated values
of contrast for white radiation of a televisiod screen (e = 0.6)
with external lighting by incandescent lamps. If the spectral
regions in which the radiationsfrom the screen and from the
external lighting are concentrated are sharply delineated, it is
advisable to use selective light filters. Polaroid films can
sometimes be used to limit access of outside light to the screen.
The contrast can also be increased by reducing the scatter of
light caused in the tube and in the thickness of its glass face by
Card l/ 2

An optical method of increasing the ... s/196/62/000/012/008/ol6
E194/E155
multiple reflection of the actual radiation of the screen.
aillustratIons. 8 literature references.
ASSOCIATION: Gosudarstvcrlnyy optich. in-t, Leningrad
(State Optical Ins itute, Leningrad)
;Transmission factorIlmage Illuminance of screen from
:of neutral light Ibrightness external source. lux.
-;f:LltCiw In n.t. 0 100 300 3000
Contrast
100 1 0:83 0.62 0.111
o.6 6o 1 0 91, o.85 o . -~, 6
0.3 30 1 0.97 0.92 0.53
0.1 10 1 0.99 0.97 0.77
'Abstractor's notol Complete translation.-1
Card 2/2

VOL'U'NSHTETN' A.A., kand.tel,,hn.nauk.
4,
Transmittance coefficient of selective filters in meso-oic vision.
Svetotekhnika 6 no.9:8-l.3 S '60. (MIRA. 13:9)
1. Gosudarstyennyy o-uticheakiy institut.
(Light filters)

VOLIKENSHTEM, A.A., kand.tekhn.nauk; OSHr4hRIN, A.G., inzh.
VFM-57 visual laboratory photometer (for law brightness). Svetotekhnika
4 no.12:19-21 D' 58. (MIRA 11:12)
(Photometers)

VOLIKENSHTZYN, A.A.p kand. tekhn. nauk.
--,e -- 'j, 0
-- ~t : a~, ow
Summation of small luninosites. Svetotekhnika ito.1:18-24 Ja 159-
(MA 12:1)
1,Gorudarstvennyy optichookiy institut.
(Photometry)

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Won.
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C31C.CH (11) directly with SbCU in the presence 4
SbCle (cf. Chm. led. 23. No. 1. 22(1931)) and by treat-
ist U with a soda. of CUCI.. Cua and NJI.C1 or FeCl..
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VOVMNSHTEYN~ B. M.
4304.0s6o 00t, ISAT
"Instructions an Accounts between Plants Concern1mg
Beets Which Uve Been Turned over for Further Proo-
esslng,"(~B. M. Vollkenobte7n, Dzhambul Sugar Refin-
ery., 3 PP
"Sakhar Pz~ Vol 11, No 10
Vain Administration of Sugar Industry (Glaveakhar)
Issued new iustructicyna an order of transfer and
accounts baitweei2augar refineries and beet storage
bases (eveklobazi). Instructions concerned shipping
sugar beets for further processing, but were worked
out an a high level and 3Aoked certain practical
operaticoal qualities. Aithor suggests detailed
obemaes In those instructions.

VOLIMS11TEYN, B.M.
Sugar Industry
Analysis of production cost of granulated sugar. Sakh.prom 26 No. 9, 1952.
9. Monthl List of Russian kccessions, Library of Congress,December 1952 -11%1, Uncl.

VOWUNSETrM, Bzm~
Yethods. of analyses for determination of sugar losses in beets.
Sakharnaya Prom. 26. No.-11, 29-32 152. UMRt 5:12)
(CA 47 no-13-.6688 '53)

VOLi-r,L-N,TSjiTEYN B. M-
3
Beets and Beet Surrar - Transportat-Jon
Ca --Lat,iori of sufflir beets. atkli. pr,Dm. 27, NO. " 1953.
Charges for ~'LUUOMot'jve transpo,- -
9. XSELIhly List of Russian Accessions, Library of Congress, _ June 1953. Unclassified.
IJLL - - -

VOLIKENSHTEYN, B.M.
- -... - ~ I-
Arroneous suggeation (variation in the rendement of brown sugur). Sak-h.
prom. 27 no.4:38 Ap '53- (xL?A 6: 6 )
1. Karlamanskiy sakharnyy zavod. (sugar induGtry)

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layer unitnol.. and the deviations from LAuStnuir's clemen-
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empirical adsorption Isotherm. H.a., Freundlich's iso-
therm is obtained when the gAvwbcd mots. repel one an-
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mutual distance. Rotim-Ail (C.A, 40. 49311) cak-d.
the inhonsogencity of adsotbent surfaces under the assump-
tion that there is no in"eraction between adsorbed mots.
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the laws of mol. interaction and the
een
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VOLIKENSHTEYN,,F.P.
Certain adsorption peculiRritiea conditioned by "-bhe7-Mftl disorder" on
crystal surfaces. Probl.kin.'i kat. 7:360-382 149. (M1RA 9:9)
(Adsorption) (Thermal analysis) (Crystallochemis try)

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US AV tv a Cp iv (wit alit ICK Mult it,n n I xe
0710 -, 7*10 do 0 1
T4 10 0 0 0 0 0 0 0 0 4, * 0 0 0 0 0 0 40 o I
% 4 4 A - -

Vollkenshtel,nJJI., 3,meernijig c,:~rtri*n pecalii-rities ~f arls.-wption _~I.xe to a `naA
di3o-rder" on the Surf~ae of tIns
The -)f olec-,Ileo on the :;--irf ace 3f I-- c.-jst;II for the c-se wh~_-re
the nuMber of ad5orntion centers ch ni-es tomrarature is ex:imined. The ad.3.orption
centers are treated as Aefects of the surf:~ce, that is, as local dist -_wban,2c s of the
neriodic structure of the lattice. The kinetics of adsorrtion under de'Cinltz,~ c=dLtions
tAll be ex3ctly the same as in the c_ase of the so-c-Iled "activated" andsorption,
,qII,ho--_1gh the --ictivating barrier is a,)sent. The isottil-,erm of adsorption is -)f type
Q--p. The differential adsorption he:A is a fanction of Cillin!-,, alt!,Ou~-h the- sarface
is in energy nd t.he inte.:~act~.onlnt,,,een the adsorbed m-.)lecules is
dis-_-ega-ded.
Inst. of ihysicn,l Chejistry
D~~pt. of "';a1u-lysis and T-Dpoche.-Istry
Ac, -1. Of zici. , US32
103co"I
juiy 14, 194,3
93: J -,urn I of' i,hysicn-I 'he 23, 1 o. 2, (1-49)

c
affiil;~ e9 sweerpOw bee-mM abood by "dwnsa
re" an as pulme of glys"k. w1pt"Weln
(Inst. Phys. Cbem., Acad. 8d. Ars VIAMO-1ka-WIT
-kj, L46. 3,
Guido Ap Auss. Sci. Perwiewl Lis., Bl.Z;IW4
SeeC.A.44,18c.
H. 1. C.

VOLIXENMMI
USSR/Physics - Electrons Jul 50
Crystals, Ionic
nBehavior of Electrons in Ionic Crystals," F. F.
Vollkenshteyn, V. L. Bonch-Bruyevich, Inst of Phys
Chem, Acad Sci USSR
"Zhur Eksper i Teoret Fiz" Vol XX, No 7, pp 624-635
Considers ionic crystal coutaining "excess" elec-
trons (conduction electrons). Behavior of these elec-
trons is considered to be multi-electron problem and
is solved completely for case of tvo "exclass" elec-
trons. Show that among possible states of system
there exist states corresponding to individual and
paired electrons. Submitted 19 Dec 49.
16BT91-
168 T91

Wed d asisall q%assidd" d leapstrid" M Ibs
P
. P. Vollmnshteln Onst. ph".
=YAZ=0!6Mfti.R.' W-___W_T~PkW. Pis. Khtne.
24. I(KR-W(I9W)._The catalyst stufsee is treated as
4 twO-dinsr"skmal semi-conductor (Tamm levels, cf. V'.
C.A. Q. 662W). Chrmisarttrd alcens or mole. and pro.
levelslying
betwvvn Ow valence and the coeductIon hS.U. Tlwy err
itaftiard to a cenaln extent depending on the Fermi Arvel of
the system. The latter depends on the no. of Impurities at
b-h kin&, donors and acceptors, and an the temp. %7hrn
inerrasing awls. o( a dot- are adwwbed an the xudaft, I he,
degree of Ionization of the don" Clecresses with cowragr.
This decirrase corresponds to the interaction betwevn ud.
rb-I species, Quite generally the dcqme of ionization of
accepton increases under the ink~nce 09 ISICIVIU01121 amts. of
domw impadtks. and vice verse for acceptor impor-it".
The dcww of ionization may be expreasct as & fcnction at w.
the
no. of electrons in the conduction hand. These prin-
riPl" lead to the computation of the rate of a catatyzrd
FVAC%Wn RS it (UlIC6011 Of 9 9991 Of the V16" POZZIllett-IS lie -
listing the spectrum of the semicondtictor. Tbeassumption~
are (1) the reaction Involves one (or several) acceptor *pert. a
and out (or several) donor sjwcies; (2) the surfam is oniv
sparsely covemi with rractants; (3) only neutral mactani~
take part In the traction; kmixed rraCtAnts d- not maci
Then the rate first Invirdiers 'With InCIVAsing R NO 1ARIt'r -I-'-
rivases with is when ker an Inctra-Ins. Intpuritic- i-I
both W-d- affect the ".= e. A gima impurity tu,t
acta a& a prnwow at -tncli cancus. but as a poisaa at Lascr
concag, The tfsemy is not. bowtever. a complete theory of
catalyst modification. since 4 don no Consider The dt -
talled mechanism of the activation of reactant species; Et
describes the effect of the surface an the frequency factor but
waives the activation energy. The reaction rate also in-
ctesses at first with bulk cowl., then slows down for lArsvr
values of the cond. (st-type it, the present case). So data
of the thattry btrt tipts- axe suggested w
am PvtU in support
check the relation found beiviect: cond. and caWytic activ-
ity. Michel Bondast

VOLIKENSTITEIN, F. F.
"Some proble=z of conteamovary solid state electron theory," Zh.
Tekh. Fiz., vol. 21, 1951, D-. 1544 (23 -pP-)
B-84c)49, 7 Apr 55

WW/Chemistry - NDdif ication of Oct 51
Catalysts
"Modification of Catalysts," F. F. VolIkenshtsyn)
I=t ofjbys Chem, Acad Sci USSR
,?Zhu; Fit Khim" Vol XXV) NO 10, PY 1214-1227
Devoted to phenomenon of modification of catalysts
(i.e., promation by poisons, poisoning by pro-
mtors). which was discovered in ig4o at Div of
Cataly;is and Topochem, Inst of Phys Chem, Acad
ftl USSR. Compares theoretical and exptl mate-
ria3. on relation between activity of 'nonmetallic
Cryst cats. .1 ts (which are semiconductors) and
.lys
194Ti6
UM/Chemistry - Modification of Oct 51
Catalysts (Contd)
their elec cont and treats dependence of elec cond
(thus also catalytic activity) on concn~of admixte
and temp. Theory, though in satisfactory qual
iag~~eent vith expt in respect to nonmetal cata-
lysts, does not apply to metal catalysts.
194TI6

VOLVINSHT-51111 F. F.
MSR/Physics Theory of Solid Body JTanAFeb/M---r 51
"Zone Theory of Solid Body and Limitationa of' its
Applicability," F.. F~, Volkenshtein
"Uspekbi Fiz Nauk" Vol XLIII, No 1, pp 11-29
Outlines basic preliminary assumptions of zone
structure; limitations of applicability to metallic
and nonmetallic crystals, lattice "disorder" and
its effect on zonal structure, representation of
polarons, excitoa;i and doublons- Explains vhy
an incOrreCt theory (Bloch, Somwerfeld) never-
theless gives goo& resulta.

USM/Pbysics - Semiconductors, Mar/APr 52
Behavior of Electrons
'"Me Behavior of Electrons in Ionic Crystals,"
F. F. Vollkenshteyn, L. Bonch-Bruyevich
"1z Ak Nauk SSSR, Ser Fiz" Vol XVI, No 2, P 231
AMIx-eviated text of report, published in "Zhur
HImper i Teoret Fiz" 20, 624, 1951. Behavior of
2 in ---- atcknic chain is analyzed from
the Heitler-London viewpoint. It is shown that
despite states corresponding to independent
motion of both electrons, forming the usual zone,
22OT103
Still 2 oth6r zones of so-called "doublon" states
exist. In these states the wave-function de-,
cres,ses exponentially with distance between the
electrons,
22OT103

USSR/Nuclear Physics - Ionic Crystals Feb 52
"Problem Concerning the Behavior of Electrons in
Ionic Crystals," F,F~ Volkenshteyn, Inst of Phys
Chem
"Zhur Eksper J Teoret FiZ" V01 XXII, No 2,
pp 184-193
Analyzes behavior of 2 "excess" electrons in ionic
lattice as a multi-electron problem) i-.e.19 outside
the zone theory. Obtains 2 different states: "sin-
gle-electron" corresponding to zone theory (inde-
pendent electrons), and "doubled" state in which
both electrons are rigidly bound together, moving
USSR/Nuclear Physics - Iouic*Crystals Feb 52
(Coutd)
conjointly within the lattice. Introduces condi-
tions of cycling and computes number of "single"
and'"double"'state'eledt-rons.' Determines condi-
tions of "doubling'l-type state. Received 14 Apr
51.
C4

Chontical, adanr tl n on Ionic crystals. V. It,
-0
I'll. 26. 402-
J. i.-A inath, dimutAnn of the methan6m of cbmz1--ffp-
tion in the case of a univalent atain A adsorbed on an i(mic
crystal of the type M *R-.' The ntom A is attrncted to -.1
free lattice electron, fortninga local platte of adhesiott. To
Ian extent depeuding on the distance of A from the cr-;-;tztl
surface, this local plane is drawn toward the cond, 2otle;
when A recttlcs to infinity, tlic plime incrm with the zotle.
'The migriation of na ckctron from the mnd. zotic to the ltx-11
phine of ntibe.-Jon amounts to localimtimt of Vie frtc clm~rou
near A; the greater the degree of localieation, the declicr is.
the plane of adhesiom A hoitiopolar bond k formed corn-
pri-sed of one electron each front atonx A and flit! lattice.
Without the free lattice e1cctron chemistirptinn is iniposxible.

[I- IV-.at I IA~
:Won/ Chemistry -,--Adsorption
.1/1 - I Pub 40 4/22
A*bh034--: - i Vollkenshteyn, F. F.
t&-1w
Electron processes a ng chemical adsorption. Part l.-
P63-16d1cal Izv,,. AN SSSR. Otd. khim. nauk 5, 788-794, Sen.-Oct 1953
Abstra
et The'results of numerous works on the theory ol heteropneoup catalysis,
- the~purpose of which was to determine the elementary kmicr05C0piC)
mechanism of chemical processes occurring on the surface of a crystal,
were analyzed. The problem of adsorption and catalysis is assumed as
a physical problem and considered from the viewpoint of the modern
theory of the solid body. The problems of tho electrons of the crystal-
, which take direct part in the mirface of the crystal,
line lattice
.
are discussed. it was noted in several cases that these electron5 not
only take active participation but even contrDl the chemical processes.
Five USSR references (1947-1953). Graphs; draw-.ng.
Institution : Academy of Sciences USSR, Institute of Physical Chemistry
Submitted : March 20, 1953

USSR/Chemistry - Adsorption; NOVIDec 53
Catalysis
"Electron Processes in Chemical Adsorption,
Part 11."'F.F Vollkenshte),n,'Inst Phys Chem,
Acad Sci USSR
Iz Ak Naulk SSSR, OkhN, No 6, PP 972-979
Develops a theory of adsorption phenomena based
on electron processes. Points out its importance
for the theory of catalysis. This ia a contin-
uation of Part I of the article, published in I%
Ak Nauk SSSR, OMN, No 5, pp 788-794, 1953.
273T7

an ionic crystal is discussed on the baAs of
that free lattice electrons In the surface zone
of, g7raEa~alas adsorption centers. The no. of adsorptlon
ccn Increases with surface charge and with temp. The
1kinetics has the chatacter typical of activated adm7ition,
jaltitipugh the potenthl barrier near the crystal sudw In as-
1954 77.-The hypothesis q(
,I :s4inidtobtabstnt. 11. lbid.107
W,
I '" ftysioallhemistry ifree electrons as adwwtion centers leads to the Freundlich
joiAs t
adsorption Isotherm i th exponent I/,, although the surface
Is" assumed homogeneous. Interaction between adsorbed
imols. Is Ignored, and' d6socn. is absent. The differential
heat of adsorption is a function of the charge. Riposure of
cry$ to I t 3 ng quen es inertases
the no. of OM -twteX3, cap tv of the
and the time rate of adsorption. Surface lunpuri-
surface
ties of the acceptor type must decrease the adsorption rate
and capacity of the crrstal; donor impurities increase them.
These results agree with a no. of expd. data, e.g., the workl
of Luyckx, d al. (C.A. 36, 54286; 38, 451M), with whith the
X
elementary Langmuir adsorption theory is not consistent.

VOLIKEWSHTEYN, F.F.
Chemical Abst.
Vol- 48 No. 6
,Mar. 25 v 1954
General and Physicol
jjjr~Lij, r S,",e i 'j:, Na uk 50, ifj~,r
c--r. bt 6tVr cv---n. fin- or -Jhy!;,
(invol,irg,iOectrostati- P,rcco- Th(: probability that I
N,LS 11101. X-MI'11CCORIC *lt0dJCd t0 Url adsorption center Is.
give n by I - v-,1kT (t !A jctj%,ntijlj cll,rgy). In the otir-
electrott m-ltl J( adKorptiott, the free dectrons contained
in the crinifit Ftion band i-F the surfat.~! take an important
part; in 2-06&on aelsorption ;in imporEant part L; layed
by t1w. hiteradiou uf -conductinn dectrons tripp(A la sur-
Inre traps -rad 1~15 atoin5. In both case,; adsorption centers.
rae lif-litcd .1tolps, N1, Itt :1 of ,mrfacc! ionq, M T, Thes-
"'heirdatry vitolus cillit"Witi. 1w 1111"at-t, valmice Tractilir with 0e lut.
!Forhcd umterial, , Adsoi~~don o-n("i becomi, localized
on the surfact, by t1w r dFurption proresq. Donors increase,
acceptom drereasit, the concn. o" ad~urpfioit centers. 11-
Jumiri.ition by a, vr~*m length cormsponding to tlic inner
phrltochm. PITec; ,*3,cr~ascs rids-irption. New aticarption
cen rri-S are creat.~, x J~ !n tile surfacr is P~lrtially vnvered at
the exp,.-nic rif fret! efectroni in the cond. baud~ Tbe ad-
'"n law. N - v,4-j. tint to tile inerva- of nfl.~Jrptioj
Centers with increasing Thii increase 19
a typical feature of the neivili!!nry. If) ref`crenc(-!~.
S. Paks, -

-YN r
P*
.:USSR/(;hem-4stry
Card 1/1:
-Author6: VoIll.kenshteyn..F. F.
TUN Two types of a homeopolar bond during chemical. adsorption
Periodical Zhru. Fiz. Khim, 28, Ed. 3,, 422-432, March 19.";4
Abstract Investigated are the processes of electron interchange between the
surface of the adsorbent and adsorbed atoms, In other words the
author investigated the role of the free electron,3 of the lattice
during chemicalladsorption. There are two-possible types of a
bond of a chemically adsorbed atom and a "..'Alface: 1) weak (mono-
e3j3ctron) and strong (di-electron) bond. 16 the state of a weak
bond the free valence of an adsorbed atom remains unsaturated.
Transformation into a strong bond is accompained by the entrapment
ofthe-free electron of the lattice by the adsDrbed atom. At
this point the unsaturated valence of the adsorbed atom becomes
saturated. A chemically adsorbed atom can cha,nge from one state
into another. Eight U.S.S.R. references. Graphs.
Institution Academy of Sciences U.S.S.R., Institute of Physical Chemistry
Submitted April 28, 1953

7i7,
j-
=ffl/ Chemistry Physical chemistry
Ca2q,- 1/1 Pubs 147 7/25
-Autbors Bonch-Bruevich'. V,, L6., and Volikenshteyn,, F0 F.
Title i Conception of the "heterogeneous surface" in adsorption theories
Forlodical s Zhur, fiz. kbim. 28/7 1219 1224p AOT 1954
Abstract, t The physical concept of a heterogeneous surface.,in adsoprtion, procesm
is elucidated. The electron processes occurring during adsorptionY
and'. which may lead to certain deviations from the Langmair adsorption
laws, are discussed. It is stated that further development of the
theory of heterogeneous surfaces depends upon the knowledge of the
physics of.heterogeneous surfaces-, i.e.. knowledge of the elementary
mechanism of adsorption processes. Nine USSR references (1935 - 1954).
Institution Acad. of Sc. USSR, Institute of Physical Chemistry and The Electro-
technical Conaunications Institute Moscow
Submitted July 7j 1953

AF701597 TREASURE ISLAND BOOK REVIEW AID 799 S
F. F. VOL'KE (Institute of Physical Chemistry, Academy of
QL;.LWJ1qW0j U0
y
DISKUSSIYA (Discussion). In Problemy kinetik'L I kataliza
(Problems of Kinetics and 'ffa-talysis), vol. 8. Izdatel'stvo
Akademii Nauk SSSR, 1955. Section I: Effect of Illumination
on the adsorbability of solids. p. 68-69.
The papers of A. N. Terenin, I. A. Myashikov and S. Ya.
Pshezhetskiy have been reviewed. It was experimentally shown
In both papers that in some cases under the action of a light
quantum, the bond connecting the adsorbed molecule and the solid
compound, was ruptured; this results In the desorption of the
adsorbed molecule. It was also established that desorption of
molecules causes chan e in the electric conductivity of the
crystal. Fig. 1 (p. 99) illustrates the mechanism of chemical
adsorption of the 0 - molecule on the semiconductor. One
ref. (Russian) (1951). 1 diagram.
1/1

AF701597 TREASURE ISLAND BOOK REVIEW AID 8o6 - s
VOL'KENSHTEYN, F. F (Institute of Physical Chemistry, Academy of
MSR~'
NEKOTORYYE VOPROSY ELEKTRONNOY TEORII KATALIZA NA POLUPROVODNIKAKH
(Some problems of the electronic theory of catalysis on semi-
conductors). In Problemy kinetiki I kataliza (Problems of
Kinetics and CF-talysis), vol. 8. Izdatellstvc) Akademii Nauk SSSR,
1955. Section II: General problems of the theory of catalysis.
P. 79-96.
Free valences on the surface of the catalysts, the adsorption of
free atoms and radicals, reactivity of adsorbed atoms, the role
of free valences in the adsorption of saturated molecules, and
some types of heterogeneous reactions are covered in this paper.
(based on studies carried out by the author with S. Z. Roginskiy,
V. V. Voyevodskiy, and N. N. Semenov The author introduces the
concept of crystal as a "polyradical i.e., 'the crystal possesses
free valences on Its surface and, in addition, contains some other
valences which can be opened (*made free") in the course of the
reaction. The crystal acts as a catalyst in accordance with two
rules: 1) the retention of the total number of valences
and 2) the tendency of the valences to saturation. The radical
1/2

VOLIKENSHTEYN AID Bo6 - '~7
,,.F. F,, Nekotoryye voprosy ...........
mechanism of heterogeneous catalysis is just the chemical
aspect of mechanisms, based on the electronic theory. 9 ref.,
all Russian (1947-1955).
2/2

AF701597
VOL'KENSHTEYN, F. F..
Sciences, USSR)
DISKUSSIYA (Discasslon).
lems of Kinetics
Nauk SSSR, 1955.
conductivity and
TREASURE ISLAND BOOK REVIEW A ID 82 7 - :3
(Institute of Physical Chemistry, Academy of
In Problemy kinetiki i kataliza (Prob-
and CatalTsis), vol. 8. Izdatellstito Akademii
Section III; Connection between the electric
catalytic activity of semiconductors. p. 201-203.
Review of the relationship between electric conductivity and
catalytic activity of semiconductors based on experiments reported
in papers by K. I. Matveyev and G. K. Bouskov, p. 168-174; 1. A.
Myasnikov and S. Ya. Pshezhetskiy, 175-179; and V. I. Lyashenko
and J, J. Stepko, 180-188.,
In accordance with 'the electron theory, the catalytic activity
of semiconductors depends on the concentration of electron gas
on the surface. Under conditions of equilibrium,-~.thjS
concentration is connected with the concentration of electron
gas inside the semiconductor,
Addition of oxygen to ZnO decreases the electric conductivity
and inhibits the dehydrogenation of isopropyl alcohol. The
1/2

VOL'KENSHTEYN, F~ F., Diskussilra
AID 827 - S
mechanism of the reaction is Illustrated on p. 202. One reference
(Russian) (1951).
2/2

kF701597 TREASURE ISLAND BOOK REVIEW AID 82-3 - S
VOL'KENSHTEYNJV__F- F. and V. B. SANDOMIRSKIY (Institute of Physical
Chemi-stry, Ad-ademy of Sciences, USSR).
0 SVYAZI MEZHDU KATALITICHESKIMI SVOYSTVAMI POVERKHNOSTI
POLUPROVODNIKA I YEGO OB"YEMNYMI ELEKTRONNYMI SVOYSTVAMI
(Connection between the catalytic properties of the surface
and the space electron properties of semiconductors). In
Problemy kinetiki i kataliza (Problems of Kinetics and Catalysi
vol. 8. Izdatellstvo Akademii Nauk SSSR, 1955. Section III:
Connection between the electric conductivity and catalytic
activity of semiconductors. P. 189-197.
The establishment of electronic equilibrium between the surface
and space of the semiconductor shows that the concentration of
free valences on the surface depends on the characteristics of
the space. In the case of small crystals, the characteristics
of the surface do not depend on space, andp conversely, in larger
crystals, the characteristics of volume do not depend on the sur-
face. Adsorption on the surfa--e of the crystal changes the con-
centration of the electron gas inside Small crystals, thus affect-
ing the electric conductivity. If atoms-acceptors are adsorbed by
the surface of a semiconductor, the electric conductivity will
1/2

VOLIKENSHTEY, F. F. and V. B. SANDOMIRSKIY. 0 svya,,,i . . . AID 823 - S
decrease; the adsorption of atoms-acceptors on a hole-.rich
semiconductor will increase the conductivity. Five references,
4 Russian (1937-1955). One table, 3 diagrams.
2/2

D j ~-; -.-, --~: -, : -~- - -- - - - - i) , - - _-: ~J- - - '~Tj ;~32
AY70155
'7 7 at: I
Y V. L
QL K-'-AS ITErN F. ahd
L
rk si t i,: t e- a- nInstitlute of k:iences,
0l H (Zhe conc~r-t
IYATIU A
P
of "nommi-forn surface" in adsorptior. tlaeor,-es) In lPro`---:-el.--y kinetik-i
Pi --l Ist o ~-k- a --; e;
-oblCITIS of Kinetics arid Cabalysis), vol 8. -Lz,-iat, I aul,
19-55. Section IV: f~;ature of the, acl;.iv(-, sulrfacu. p/ ~!L-,'; - 223.
,~ir):4nt of the
Studies -onduct---- 1 by Lh~~ authors 'liave Ueen U'rie e
concT)t of "nonuniform sl-rfacell which take rlace -lur 4.n.- adsorption may rejult in
deviation forim Langmuirls -regulari !lies. -the concentrati6n Of -f-re;-- atons in
sendcon(Auctors depends on tejuperatiwe and concontration of tlae L(Ldxtui,es in
the adsorbent crysf~al. jhen the ele--trons in the conduction zone of the adsor-
bent surface a-:;t as adsorpl-don ct~nt-ers, t.la4Ar numz,er depemls on the nw,,Lbr of
atoms adsorbed. lio only ele~~:,rons, but lattice defc;cts a~; well -:i-:y a,IL a~;
adsorption centers. lhe distribut-ion functions is a of L,,-,F-
en,.ire i.e., adsorbt.,nt arj(- adsorbate. Dine referc:ricess, all r~u3---ian
(1`,35-1950

.
i/Th
:of fe
al
i
l
i
h
i
enc
n
. ra
e
etv
es
eterogeneous c4talys
s'
V.
V.V.
o&kil F F. VoMp- en71PF1 = N.
7.
,40
loss
JV..k 7
S
S
P
6
A
=Ikx
-4-lalry
.
,
.
.
,
.
.
_
P
sketch of the principal featiaes of a theory of catalysis. A
-that af
-A as a single ghint mol-,
catalyst crystal can be view.
similar. to tb4t of free
fects heterogeneous reactions in a %
Mdlcals iii bociogegeous rcactions. In both cases, Mactions
ally slialLar taeclumisms. In all,'catalytic

d by esseritL
prom
reactions the proem l9cauwd and (Hretted by. free vatencles, -
lays a role uotmid
and the mtalyst p ike that ofa 'kadical".
The phys. nature of free valencies ow the catalAt crystal
surface, and the different band types between thd adsorbed
n4l thecrystal surface are discussed., Tjie-reactlon
atoms a
-
on t1je participation to the reactioni
mechanism" oxe based 4
of, free valcucles-and bf tht heterageneous'radicals formed
during the* process on the catalyiit surface. - The introduc-
tk)n of St awn CuttAysis inechald"11 JINcs a novel explaniflott
of-the mechanism. of aeLvIerAtiou caused by the, catalyst.
This acceleration ma 'y be a result of forination of free valen-
cies &at ~causes~ in generation on the trayst at. mucti
higher velocities than in the gas phase. A 2nd catalyst func-
tion way consist in the f of heterozeneous
Lorpm 1911
b
w
of
h
h
rowM
c
hi
th
t
l
f
w
c
c
ain-g
an
e crys
a
sur
a
e,
ay
y
doi:3 are realoed. - The chain-growth may frequently be
impeded by the high eadotherinicity of the compds. formed
ain development
in the r1enica6ty stages. When the olt:
via the hctcrog~,neous radicals bappen~ to be cnMeticaUy-_;
more probable, catalysts cart'greatly accelerate the process.
A complete absence of information with regard to bond ener-
gies of single atoms and of at. groups with the catalyst may
the
be the principal difficilty that at present interferes with
,
evaluation of velocity relatious in elementary heterogeneous 4
radical reactions. .A rough evaluation of the heats of
r
g:
ms such stages appear pri
1'actions at elementary stages mak
able, but any concrete schemes must still be considered.
rdy. hypothetical.
pu
_ . .........
-7

VOLIKIINSHTEYN,F.F.; ROGINSKIY,S.Z.
Ionic bond in the chemical adsorption on semiconductors.
Zhur.fiz.khim. 29 n0.3:485-495 Mr '55- (MLRA 6:7)
1. Akademiya nauk SSSR, Institut fizicheekoy khimil, Moscow
(Adsorption) (Semicondnetors)

Vo~_'KC-riS~17EYN, FF
USSR / PHYSICS
SUBJECT CARD 1 / 2 PA - 1699
AUTHOR VOLIKENSTEX1q,F.F.
TITLE Semiconductors as Catalyzers of Chemical Reactions.
PERIODICAL Usp.fis.nauk, 60, fasc.2, 249-293 (1956)
Issued: 12 / 79_~ 6
This work investigates the basic phenomena and the basic notions of catalysis
and enumerates the main problems connected with the utilization of semicon-
duotors as catalyzers. On the All-Soviet Conference on Semiconductors (Lenin-
grad, November 1955), a special'department was'installed for "Semiconductor
Catalysis". The present survey is arranged as follo*s: Activity and selecti-
vity of a catalyzer, adsorption as a stage of catalysis, electron processes
on the occasion of chemosorption, various types of binding connected with
chemosorption, the reactivity of adsorbing molecules, the adsorptiv capacity
of the surface, catalytic activity and the part played by admixtures, cata-
lytlc activity and electric conductivity.
Summary. The factsmentioned in this article BUpply a sufficient amount of
evidence to show that the catalytic properties of semiconductors are con-
nected with the electron processes occurring on the surface of the semicon-
ductor and are, after all, caused by them. Therefore, tho chemical problem
of catalysis may at the same time be described as a problem of semiconductor
physics. The catalytic process actually has an electronic mechanism. The
electron theory of catalysis, which is based on semiconductors, aims at ex-
plaining the elementary mechanism of the catalytic act. 'Phis theory is based

UBP.fiB.nauk, 60, faBC.2, 249-293 (1956) CARD 2 / 2 PA - 1699
on the one hand on the theory of semiconductors, and on the other on the
theory of chemical bindings; at present it is in the act of being developed.
It may be said that we are faced with a certain tendency of theoretical and
experimental research within the field of catalysis. This new tendency came
into being about 10 years ago ift the Laboratory for Catalysis of the Institute
for Physical Chemistry of the Academy of Science in the USSR by the initiative
of S.Z.ROGINSKIJ. Several years later this tendency begaJ2 to spread also
outside the Soviet Union, and at present quite a number of foreign (i.e. non-
Soviet) laboratories and also some research workers (physicists and physico-
chemists) are working in this field.
It is a characteristic feature of our times that experimeat lags a little
behind theory, and this is particularly the case with Soviet works. Several
theoretical prognoses have hitherto not been confirmed by experiment. Further-
more, such experimental material as might serve as a basis for theoretical
research is as yet inadequate. There exists as yet no theory by means of
which the physical mechanism of catalytic processes might be explained. The
so-called electron theory of catalysis is now about to venture upon the
first stages of development in this direction.
INSTITUTION:

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VOLIXENSITTEYIT. F.F.-
Charging the semiconductor surface during adsorption. Vest. Yosk.
un.Ser.mat. mekh. astron. fiz. kh1m. 12 no.4:61-78 157.
(MIRA 11-5)
l.Kafedra fisiki dlia khimicheakogo fakullteta univeraiteta I
Institut fizicheskoy khimii AN SSSR.
(Adsorption) (semiconductors)