SCIENTIFIC ABSTRACT VOLKENSHTEYN, F.F. - VOLKENSHTEIN, M.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001860510017-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 9, 2001
• Sequence Number: 17
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

AUTHOR: VollkenBhteyn, F.F. (Wolkenstein, P.P.)
TITLE: On the Problems Of Semiconductor Theory in ConnGotion
with the Catalysis Theory (0 zadachakh, stoyaBhchikh
pared teoriyey poluprovodinikov v sVYELZI 8 problemoy
kataliza)
PERIODICAL: Izvestiya Akademii Nauk SSSR, Vol. XX1, #2, PP 176-178
1957, USSR, Seriya fizicheskaya
ABSTRACT: The surface of a semiconductor possesaes a specific
property to catalyze many chemical reactions. The
phenomenon is reduced to the following process: mole-
cules of reacting gases are absorbed on the surface
of a semiconductor, then being in the absorbed state
rjaact with each other, and the reaction products are
desorbed again. Thus the reaction is transferred
from the gas phase to the semiconductor surface,
The problem is why this leads to its substantial ac-
Card 1/3 celeration (sometimes in tans of thousands of times)?

TITLE. On the Problems of Semiconductor Theorj in Connection
with the Catalysis Theory (0 zadachakh, stoyashchikh
pared teoriyey poluprovodinikov v avyazi s problemoy
kataliza)
The other problems awaiting their theoretical clari-
fication are as follows:
1. The mechanism of catalytic property of a semi-
conductor is hidden within the semiconductor itself,
The problem is to discover this mechanism,
2. Adsorption in question is a so-called "khemoso-
rbtsiya", chemical adsorption, caused by the forces
of chemical nature. What is the mechanism of the
chemical adsorption, that is the mechanism of forming
a chemical connection between a crystal and a gas
molecule?
3. Iffhat is the orig-in of the potential barrier on
the adsorption curve, the origin of the activation
energy?
4. Molecules are often dissociated during the
chemical adsorption, #Vhat is the mechanism of this
Card 2/3 dissociation?

TITLEs On the Problems of Semiconductor Theory in Connection
with the Oatalysis Theory (0 zadachakh, stoyashchikh
pored teoriyey poluprovodinikov v svyazi a prublqmay
kataliza)
5. The catalytic activity of4emicQnductor essentially
depends on the character and concentration of admixtures
contaired- within its volume. By what a way do admixtures
so considerably affect chemical processes taking place
on the semiconductor surface?
6. Why is the activity of a semiconductor connected
with the concentration of free electrons and holes
contained in it?
These problems have been the subject of theoretical
investigations in the Catalysis Laboratories of the
Institute of Physical Chemistry. No references aricited.
INSTITUTION: Institute of Physical Chemistry of the USSR Academy of
I Sciences
PRESENTED BY:
SUBMITTED: No date
AVAILLBLE: At the Library of Congress
Card 3/3

AUTHOR: Vollkenshteyn, F.F. (Wolkenstein, F.F.-')
TITLE: On Some Problems of Semiconductor Catalysis (0 nekoto-
rykh voprosakh poluprovodnikovogo kataliza)
PERIODICAL: Izvestiya Akademii Nauk SSSR, Vol XX1, #2, PP 179-182
1957, USSR, Seriya fizicheskaYa
ABSTRACT: There are experimental facts which indicatp a close
oorrelation between electronic properties of a semi-
conductor and its catalytio and adsorption qualities.
Chemical adsorption results in charging the surface of
a semiconductor. Therefore, energetic zones are,being
curved at the Burfaco and the contact -potential arid
electric conductivity of a semiconductor can change.
These-changes following adsorption havia been actually
observed by V. Lyashanko and-1. Stepko.
The probability for a chemically Adeor'bed Molecule to
be in a neutral or charged state depends on the level
of the chemical potential or the concentration of free
Card 1/4 electrons and holes in the crystal.

TITLE: On Some _Pxobleips of Semiconductor Catalysis (0 nokoto-
rykh voprosakh'poluprovodnikovago kataliza)
The dependence of the adsorption activity of mercury
sulfide on its stoichiometric composition and the
effect of lighting on the adsorption activity point
out in this direction. Sometimes, howover, the lighting
leads to an opposite effect, i.e. decroase of the
adsorption activity, as-Terenin and Myasnikov experiments
showed.
Another group of facts is concerned with effects Of
admixtures on the semiconductor catalytic activity.
The latter is characterized by the constant of rate
K which usually satisfy Arrhenius' law:
K== Ko e - &/KT
where E is activation energy and T is temperature.
The insertion of an admixture in-roa-:semiconductor
leads to the change of both4t-Viv~:tioh energy B and\
Card 2/4 pro-exponential multiplier K.0

TITLE:
On Some Problems of Semiconductor Catal-rsis (0 Nekoto-
rykh voprosakh Doluprovodnikovogo kataliza)
Reaction of ethylene oxidation on catalyzer Mg0,.Cr 203
with admixture of Na2SO studied by Krylov and
Margolis showed that on~ and the same admixtures, and
used in the same quantity,expedites the reaction at
low temperatures and dopes the catalyzer, :1.6.,
inhibits the reaction at high temperattires. Depending
on its concentration, one and the same admixture, at
the same temperature, can either promo-~e a reaction or
inhibit it.
In the author's opinion,
changes the concentration
gas in a semiconductov.
the reaction activity of
semiconductor surface and
molecules,
the insertion of admixtures
of the electronic and hole
This concentration determines
the molecules adsorbed on the
catalytic a;ctiv-ity of the
Card 3/4 Theories used at present are of a phenomenological

TITLE:
INSTITUTION:
PRESENTED BY:
SUBMITTED:
AVAILABLE:
Card 4/4
On Some Problems of Semiconductor Catalysis (0 Nekoto-
rykh voprosakh poluprovodnikovogo kataliza)
character., The future theory, the electronic catalysis
theory, io in the beginning phaue of ito origination,
The article contains 4 graphs~ No references are
given,
Institute of Physical Chemistry of the USSR Academy of
Scionces
No date
At the Library of Congress

USSR/Physical Chemistry - Kinetics, Comfoustion, Erploziws, TOPO-
chemistry, Catalysis. B-9
Abs Jcrur.- Referat. Zhurnal Eblmlya., N-, 2) 1958; 3891-
Author F.F. Vol'kenshteyn.
Inst
Title S Qaestions Concerning Semiconcbictor Catalysis (Accorcung
to Materials of International Catalysis Congress at Phils&el-
phia) -
Orig Pab: Uspekhi khlmli, 1957, 26, No 6, 659-672-
Abstract: No abstract.
Card : 1/1 -21-

VOLKENSE=N., Fedor F. (Moscow)
"Towards the Electron Theory of Chemical Absorption in Semi-Conductors,"
(Plenary lecture).
report submitted for Annual Meeting Eas German Chemical Society, 28 Oct -
1 Nav 1958, Ioeipzig, G.DR.

V r) Tf-zy N F F
5(3) PHASE I BOOK MCPWITATION ;30V/1285
Akademiya nauk Belorusskoy SSR. Institut khimii
Sbornik nauchnykh rabot, vyp,, 6 (Collection of Scientific 'Works of the Institute
of hemistry, Belorussian SSR Academy of Sciences,it.. 6) Minsk, Izd-vo AN
Belorusskoy SSR, 1958. 271 p, 1,100 copies printed.
Ed.: Yerofeyev, B.V., Academician., BSSR Academy of Sciences; Tech. Ed.:
Volokhanovich, I.
PURPOSE: The book is intended for chemists engaged in research in specialized
fields.
COVERAGE: The book is a collection of scientific articles, dealing with varied
subjects, such as problem in electron theory of semiconductors, catalysis,
autoxidation of abietic acidY thermodynamics of some reactions of sulfur
organic compounds and reactions of alkyl, aryl, acyl-o.-,,qy- radicals in the
Uquid phase. Persona.3-ities are mentioned in the individual articles.
There are-331 references, of vhich 215 are Soviet., 75'English., ~O German,
10 French, and 1 Finnish
Card 1/5

Collection of Scientific Works (COnt-) 15OV/1255
TAW OF CONTEaM:
Vollkeushteyn, F.F. Some Problems in the Electron Theory of Catalysts
on semiconductors 3
Yerofeyev, B.V., and V.A. Protashchik. Study of Contact Conditions
Between Particles of gobalt Formate and Met-Ilic Cobalt With the
Aid of the Isotope Co 0. 39
Markevich, S.V. Attachments for the MS-2K Mass Spectrometer for
Studying Gaseous Phase Deuterium Exchange Reactions on S:)lid Surfaces 47
Osinovik, YeS. Study of the Formation of Initial Reaction Centers in
the Induction Period of Thermal Decomposition of Barium Azide 59
Mitakevich, R.I., T.I. Soroko, and B.V. Yerofeyev. Conjugated Decarboxy-
lation in the Autoxidation of Abietic Acid 66
Yerafeyev, B.V. and S.F,. NaLmova. Thermodynamics of Some-Reactions of
Organic Sulfur Compounds 83
Card 2/5

K T
SOV/3o- 58- 7- 34/49
AUTHOR: Krylov, 0. V., Candidate of Chemical S~,iences
TITLE: Physics -.Lnd Physical Chemistry of Catalysis (Fizika i fiziko-
-Knimiya kataliza) Transactions of the All-Union Conference
(Vaesoy-uznaya konferentsiya)
PERIODICAL: Vestnik Akademii nauk SSSR, 1958, Nr 7', pp. 119 - 122 (USSR)
ABSTRACT: This conference convened in Moscow between March 20 th and
March 23 rd. It was called by the Department of Chemical
Sciences and the Institute of Physical Chemistry of the AS
USSR (Otdeleniye khimicheskikh nauk i Institut fizicheskoy
khimii Akademii nauk SSSR~It was attended by more than 600
persons from different towns of the Soviet Union as well as
from countries of the people's democracies. Nearly 100 re-
ports were submitted, 78 of which were given to the parti-
cipants for discussion. The remainder was read. The follow-
ing reports were heard:
1) S. Z. Roginskiy, (Inatituteof PhyEical Chemistry,,AS USSR)~
spoke about the selective methods concerning semieonductor
Ca*~, catalysis.

Physics and Physical Chemistry of Catalysis. SOVI 30-58-7-34/49
Transactions of the All-Union Conference
2) V. V. Boldyrev, Tomsk University, used electron repre-,
sentations for the explanation of the course of topo-
chemical reactions.
3) N. F". Keyyer, (Institute of Physical Chemistry)AS USSR),
used electron representations for the clarification of
the characteristics of heterogeneity of the active sur-
face of semi-conductor contacts.
4) F. F. Vollkenshteyn, V. B. Sandomirckiy and Sh. !.!. Fogan,
Un-ati_t~~~teo ~PR-ysioal Chemistry,AS USSR), investigated
the influence of exposure as well as of an external elec-
tric field on the absorptive power of a semiconductor.
5)) A. 11. Terenin spoke about the investigation of the struc-
ture and the behavior of surface formations in the case
of adsorption and catalysis.
6) V. F. Kiselev (Moscow University), dealt with problems
concerning the elementary act ofcata.lysis,
7) G. K. Boreskov, Physical-Chemical Institute imeni L. Ya.
Karpov (Fiziko-khimicheskiy institut im. L. Ya. Karpova),
reported on the dependence of the catalytic activity of
metals on their position in the periodic aystem of ele-
ments.

-AUTHOR: Vollkenshteyn, ~.F. (Moscow)
TITLE:
PERIODICAL:
ABSTRACT:
Card-+/-4;-
SOV74-27-11-2/=j
Present State of the Electron Theory of Catalysts on
Semiconductors (Sovremennoye sostoyaniye elektronnoy teorii
kataliza na poluprovodnikakh)
Uspekhi khimii, 1958, Vol 27, Nr 11, pp 1304-1320 (USSR)
A short summary of the results of a series of new theoretical
publications in this field is given. One of the main problems
treated 'is: What is the importance of tile electr 1 Oi.e. in the case of the
n
model selected here only e2ectroadsorption is possible. The
authors especially investigated the case p 0/p >> 1 which
corresponds to a strong effect. The dependence of the quo-
tient P./o on F is given explicitly. A numerical evaluation
is given at the end of this paper. There are 1 figure and
5 references, 5 of which are Soviet.
ASSOCIATION: Institut fizicheskoy khimii Akademii nauk SSSR
(Institute for Physical Chemistry AS USSR)
PRESENTEDt July 25, 1957, by N. N. Semenov, Member, Academy of Sciences,
USSR
SUBMITTED: July 18, 1957
N;1~

'5(4) SOV/62-59-9-5/40
AUTHORS: Vollkenshteyn, F. F., Kogan, Sh. M.
TITLE: Influence of the Illumination on the Adsorptive Capacity and
Catalytic Activity of Semiconductors
PERIODICAL: Izvestiya Akademii nauk SSSR. Otdeleniye khimicheskikh nauk,
1959, Nr 9, PP 1536-1545 (USSR)
ABSTRACT: The adsorptive capacity of a semiconductor is expressed by the
number N of the molecules adsorbed with the gae on the surface
under conditions of equilibrium. This number varies at irradia-
tion with rays which may be absorbed by the absorbent. The fol-
lowing studies in this field are quoteds Terenin (Refs 2.6),
Myasnikov (Ref 5), Pshezhetskiy (Ref 5), Solonitsyn (Refs 6M,
Kiselev, Krasillnikov, Sysoyev (Ref 8). A variation of N can be
determined by changing the pressure in the adsorption space
when turning irradiation on and off. In this case photo-ad-
sorption and photo-desorption may occur, irradiation, however,
can also remain inactive. The conditions for the possible three
reactions are mathematically developed by means of the electron
theory of semiconductors. Adsorption a:ad desorption may occur if
Caz&=~:5- light causes a chemical change of the adsorbent, an apparent
141 -S

sov/62-59-9-5/40
Influence of the Illumination on the Adsorptive Capacity and Catalytic
Activity of Semiconductors
chemical change, if light causes a change in the adsorbed
molecule. The electron-theoretical invetitigation is carried out
on the example of an acceptor gas and free lattice electrons. It
was further assumed that adsorption is represented by solidly
bound particles and desorption only by ireakly bound Particles.
The adsorptive capacity 'IN" may be expressed by the probability
11~11 with which a particle is in a solidly bound state on the
surface of the molecule. Irradiation causes a change in-9.
Photoadsorption occurs with an increase of-9, desorption with a
decrease ofT)(Fig 2). Value y is introduced, which represents
the change of-9, in the case of y > I aa aisorption, in case of
y < I a desorption occurs; when y - 1, however, the surface re-
mains-inactive. PInally, y is calculated as a function of the
change of the free electrons and holes of the semiconductor
surface lattice. This function is dependent on frequency and in-
tensity of the irradiated light. V. Ye. Lashkarev (Ref 13),
V. P. Zhuze, and S. M. Ryvkin (Ref 14) are mentioned. There are
Car'U-27r.) 3 figures and 21 references, 15 of which are Soviet.

VOLIMSHIMY F. F.
"General Ideas on the Electronic Theory of Catalysis of Semiconductors."
report submitted for the Second International Congress on Catal~ysis, Paris,
4-9 july 196o.

PMSE I BOOK KAFLOITATION SOV/5095
Vollkenshteyn, Fedor Fedorovich
Elektronnaya teoriya. kataliza na poluprovodnikakh (Electronic Theory of
Semiconductor Catalysis) Moscow, Fi=atgiz, 1960. 187 p. 10,000 copies
printed. (Series: Fizika poluprovodnikov i poluprovodnikovykh priborov)
Ed.: Ye. B. Kuzuetsova; Tech. Ed.: A. P. Kolesnikova.
PURPOSE: This book is intended for phy sicists and chemistis working in the
field of catalysis, and for physicists concerned with s(miconductors and
the mechanism of their catalytic effect.
COVERACM: The book is based on lectures delivered by the author at the Division
of Chemlstry,-Moscov University, at the jagielloAski UnIversity (Poland)
and at the University of Paris. It presents in concise form the present
state of the electronic theory of semiconductor catalysis, emphasizing the
physical rather than the mathematical fund ntals. The author thanks
V. L. Bonch-Bruyevich and 0. A. Golovina., who reviewed the book. Topre
Carta-L5--

"OV/3921
PHASE I BOOK E(PLOITATION
Akademiya nauk SSSR. Institut fizicheskoy khimii
Problemy kinetiki i kataliza. [t] 10: Fizika i fiziko-khimiya kataliza
(Problems of Kinetics and Catalysis. [vol.] 10: Physics and Physico-
Chemistry of Catalysis) Moscaw, Izd-vo AN SSSR, 196o. 461 p. Errata
slip inserted. 2 .600 copies printed.
Eds.: S.Z. Roginakiy, Corresponding Member of the Academy of Sciences USSR,
and O.V. Krylov, Candidate of Chemistry; Ed. of Falishing House: A.L.
Bankwitser; Tech. Ed.: G.A. Astaflyeva.
PURPOSE- This collection of articles is addressed to physicists and chemists
and to the ccumunity of scientists in general interested in recent
research on the physics and physical chemistry of cata3Zrsis.
COVERAGE: The articles in this collection were read at the conference on the
Physics and Physical Chemistry of Catalysis organized by the Otdel khimicheskikh
nauk AN SSSR (Section of Chemical SciencesY Academy of Sciences USSR) and by
C a r' &;; !P 4-

Problems of Kinetics and Catalysis (Cont.) SOV/3921
Nt.
the Academic Council on the problem of "the scientific bases for the selection
of catalysts." The Conference was held at the,;Lnstitut fizicheskoy kbimii AN
SSSR (Institute of Physical Chemistry 'of the AS .USSR) in Mosco;5March 20-23,1958-
0f the great volume of material presented at the conference, only papers not
published elsewhere were included ini'this collection/ The conference decided
not to publish the discussion material. Papers by the following authors were
excluded and replaced by a brief author's abstract: F.F. Vollkenshteyn, Itsur-
face Charge of a Semiconductor During Adsorption", M.M. Kogan and V.B.
Sandcmirskiy, two papersj Sh.M. Kogan, "Statistics of Adsorbed Particles in
the Electron Theory of Chemisorption!t; F.F. Vollkenshte3ni and Sh. M. Kogan;
F.F. Vollkenshteyn and V.B. Sandamirskiy; G.A. Korsunovskiy; A.M. Rubinshteyn,
V.M. AkiTncrv and A.A. Slinkin; L.Kh. Freydlin; V.N. Filimionov and D.S. Bystrov.
The following two papers do not appear in any form in th:Ls collection because
the authors did not forward the abstracts requested: M.1. Temkin, E.I. Tsybina
and A.I. Gellbshteyn," Kinetics of Catalysis of the Vapor Phase Hydration of
Acetylene by Electron Vapor Acceptors"; A.A. Babushkin, "Spectroscopic Investi-
gation of the Structure of the Molecular Compounds of Boron Trifluoride With
Nitrogen and Oxygen-Containing Molecules".Addresses to the conference by E. Kh.
Tenikeyev.aud Ya.B. Gorokhovatskiy, are included in the form of brief ccmmuni-
cations. They -over the resulTs of recent experimental research which could
not be considered discussion material. A number of papa:rs and cr-munications,
Car&=&t17

Problems of Kinetics and Catalysis (Cont.) SOV/3921
for the most part dealing with problpms in the preparation of catalysts, were
turned over for publication to the ""Zhurnal fizicheskoy khimii". The papers
of several foreign researchers who participated In the conference and those of
researchers who could not participate in the conference are included In t)-e collec-
tion: 4A Zielsj~ski.9 G.DereA and G. Gaber W.K.Trzebiatowiski , A.Krause (all
of Poland),, Wu Yiieh and HBi Hniao- fang 6Zhina). The edlLors thank Academi-
cian A.A. Balandin and G.K. Boreskov tuid V.V. Voyevodskiy, Corresponding Members
of the AS USSR, for valuable suggestions during the cmpilation of the Collec-
tion. There is a bibliography of Soviet and non-Soviet soul-ces at the end of
each article.
TABLE OF CONITENTS:
From the Editors 3
1. CATALYSIS OVER SEMICCUDMTrJRS
Roginskiy, S.Z. (Institute'of Physical Chemistry AS USSR]. Electronic Factors in
Semiconductor Catalysis and-Rules in the Selection of Catalysts 5
CaN1,447
[Tristit'dt6 --- Of P4ysi-cal Ch6di76fx_-~V-AS UIESSR]. Presetit State
~;F_th_e -Electron Theory of Catalysis Over Semiconductors 21
Koutecky", J. [Czechoslovak Acadp-W of Science, Institute of Physical
Chemistry, Prague]. On the Theory of Chemisorption and of :')urface States 34
Bielanski, Adam, J. Deren , and J. Haber (Mining and Metallu:rgical Academy,
Cracow]. Investigation of Electric Conductivity of Semiconductor Catalysts 37
Vollkenshteyn, F.F. [Institute of Physical Chemistry AS USIR). Surface
C__H_a___r_ge_ 6_f-~_~_ff_;;m_Jc_o_nductor During ACsorption 50
Kogan, Sh. M. (Department of Physics of Moscav State University]. Effect of
Dispersion on the Adsorptive Capacity of a Semiconductor 52
Kogan, Sh. M., and V.B. Sandcmirskiy [Department of Physics of Moscow State
University, Institute of Physical Chemistry AS USSR]. Isothermsand Adsorp-
tion Heats in the Electron Theory of Chemical Adsorption 58
Kogan, Sh. M. (Department of Physics of Moscow State University]. Statistics
of Adsorbed Particles in the Electron Theory of Chemisorptian 59
CarAA47

- -r ffiv~~
I-rdblms of Kinetics and Catalysis (Cont.) SOV/3921
~i~htpya-,_F.F., and Sh. and Sh. M. Kogan [Institute of Physical Chemistry
AS USSR, Department of Physics of Mosccyw State Ur-,iveraity) Effect of Illunina-
tion on the AdBorptive Capacity and the Catalytic Antivit-y Cf a Semiconductor
Vollke4shtoyzi -stitute of Ph'ysical Chemistry
and V.B. Sandcmirskiy [1r
A~~-~SS-R). Effect of an External Electric Field on the AdBorptive Capacity
of a Semiconductor 61
Kogan, Ph. M., and V.B. Sandomirskiy (Institute of F-V3ical Chem-16try AS
USSR, Department of-Physics of Moscaw State Ur~iveraity]. Measurement of
Contact Potential of a Semiconductor as a Method of Detecting the Various
CLrge States of Particles Adsorbed on it 62
Popovskly, V.V., and G.K. Boreekaw- (Mcskovskiy khimikc-te1;hn--1ogichesk:1y
institut imeni D.I. MendeleyevatMoscav Chemical Technology Tnstitute imeni
D.1'. MendeleyeV]. Catalytic Activity of the Metal Oxides of the 4th Period
in Relation to tne Oxidation Reaction of Hydrogen 67
Keyyer, N.P. (Institute of Physical Chemistry AS USSR1. Nature of the
Heterogeneity of the Active Surface of Semiconductor Contat:,ts 73
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S/1951,Y~O/Gc 1 /CO VOC 1 A,07
B01 5/B06C
AUTHORt Vollkenshtayn, F. F,
TITLE: Basic Concepts of the Electron Theory of Catalysis on
Semiconductors
PERIODICAL: Kinetika i kataliz, 10,60, Vol~ 1, No~ 1) ri-- 32-14
TEXT: The present article is the reproduction of a lecture read at the
Second International Congress for_Catalys s and is a s-Ynopsis of the
present state of tHe-electron theory of catalysis on semiconductors,
with special regard to the research work done by the author and his
collaborators. The main results of the theory and cortair, conclusicriz 1--re
Jiven, but the mathematical part of the theory is not discussed. A more
detailed survey has lbeen sup-plied by the author in Vol. 12 of 11~~dvances
in Catalysis". In the present article, the results are discussed in thc
following sections: the electrically neutral and the charged forms of
chemosorption; valency-saturated and radical forms cf chemosorptior;
transitions among the various forms of chemosorptior..;Iequili',riu..-i tet,e,T-
the various forms of chemosorption. The adsorption properties of th A
Card 1/3

B~sic Concepts of the Electron Theory of S1-1()5/(,O/0,'1 1/00 11`00 1 /0- 7
Catalysis on Semiconductors B015/B~;60
surface; the catalytic activity of the surface; the part played 'by the
Fermi level. Since the position of the Fermi level, which appears in all
equations of the electron theory, is of special importance, several
conclusions are made in this respect. Followin.g the results of the
electron theory, the conclusions drawn therefrom art-, discussed in the
following sections: effect of chemosorption on the electrical conduct-l-Vity
and work function; relationship between surface and volume; correlatio!l
between catalytic activity and electrical conductivity; effect of ad-
mixtures on the catalytic activity; effect of illumination on
The author points out that the electron theory of catalysis can by no
means be regarded as final. It does not compete with the other theories
of catalysis from which it differs by its problems, sLnce it studies the
elementary (microscopic) mechanism of phenomena and proceeds from this
point. S. Z. Roginskiy, A. N. Terenin, V. I. Lyashenlco, I.A. 14yasrikov,
and N. P. Keyer are mentioned in the text. There are 7 figures and 17
references: 15 Soviet, 2 US, 2 French an-] 1 German.
Card 2/3

89349
I I q 10 P/0 16 /6 C /0 14 I/C I I
4-3oo B1 03/B207
AUTHOR: Vollkenshteyn, F. F., Doctor, Professor
TITLE: The principles of the electron theory oC semiconductor
catalysis
PERIODICAL: Wiadomo6ci chemiczne, v. 14, no. 11 (-161), 1960, 675-691
TEXT: The author gives a short survey of the present stat,:,~ of the electr'--)LI
theory of semiconductor catalysis. He refers to his more 2omprehensive
study in "Advances in Catalysis", Vol. 12. The present paper was translatel
into Polish by: Jerzy Deren', Doctor, Docent, and Jer:,,y Haber, Doctor,
Docent, both Kated-ra Chemii Nieorganicznej Akademii G,SrnJ_czo-Hutniczej w
Krakowie (Department of Inorganic Chemistry of the Academy of Mining- ana
Metallurgy, Krak6w). A paper by W. Romanowski, Doctor, appeared in this
periodical, 1956, Vol. 10, P. 439 is recommended as introduction for the
present paper. The author lays special emphasis upon the problems which he
himself and his collaborators have studied. He lists two tasks of the
afore-mentioned theory: 1. The discovery of the mechanism of olectron
processes to which, in the long run, every chemical reaction (also a
Card 1/6

89349
P/016/60/014/011/001/001
The principles of the electron ... B103/B207
catalytically heterogeneous one) is due. As long as the mechanism of
individual elementary acts of catalysis in not clarified, the science of
the mentioned processes will remain empirical. 2. The catalytic properties
of semiconductors are closely linked with the electron processes both in
the interior and on the surface of semiconductors. Since there must be an
interrelation between the electron properties of a semiconductor and its
catalytic properties, electron theory tries to discover the relations
between these two groups of properties. The author mentions the inventor
of the mentioned theory, L. W. Pisnr7hevskiy (1916) and. the following
Soviet researchers: S. Z. Ropinskiy, A. N. Terenin, W. I. Lyashenko, and
I. A. Myasnikov as well as -non-Soviet researchers. Modern electron theory
is based (in the author's view and that of his collaborators) on the
quantum-mechanical solution of the problem concerning the interaction
between a foreign particle and the crystal lattice of a solid. This
problem is solved by way of simple examples and, subsequently, generalized
by way of more complicated cases. The author neglects the entire mathe-
matical part and the discussion of the experimental data. The text is
subdivided as follows: "The Fundamental Results of the Theory", again
subdivided into: Various forms of chemo3orption, chemororption of
Card 2/6

89341.?
The principles of the electron ... B103/B237
particles with saturated valencies as well as of radicals, passing over
from one form of chemosorption to another, equilibrium between these forms,
adsorptive power of the surface, the capability of the surface of catalysis,
the role of the Fermi level. The next chapter: "Some Important ~3onclu-
sions" contains the following sections% Effect of chemosorption upon the
electrical conductivity and upon the work function, interaction between
the surface and the interior of a crystal. Relation between the catalytic
activity and the electrical conductivity, effect of admixtures upon the
catalytic activity, effect of light upon the adsorptive power. Finally
the author describes the present state of this theory as follows: The
electron theory proves that both free electrons and semiconductor holes
take part in the formation of chemosorptive bonds: the electrons and holes
play the part of free valencies, in which case the strength of bonds and
the reactivity of the chemosorbed particles depends on the degree of parti-
Gipation of electrons and holes. Therefore, the Ferrii level occurs in all
formulas of the electron theory. The catalytic and absorption properties
of the semiconductor surface are, by the Fermi level, closely linked with
the state of the crystal as a whole. As this paper shows, the electron
theory may be interpreted in three ways: a. By illustrative models; b. By
Card 3/6

8930
P/016/60/0-14/011/001/001
The principles of the electron... B103/B207
using the valencies lines, e.g., when describing the chemical part of the
phenomena (Figs. 2 and 3); c. On the basis of the energy zone scheme with
the aid of which the electron mechanism of the phenomena is studied
(example: Figs. 4a and 7). The author emphasizes that each problem may
be illustrated by one of the mentioned models. In his opinion, the theory
cannot be regarded as complete. He states furthermore that this theory
does not compete with any theory of catalysis. It differs by the manner in
which the problem is posed. The electron theory seeks to approach the
problem by detecting the elementary mechanism of the phenomenon. The
relation between the existing phenomenological theories on the one hand,
and the electron theory on the other, is the same as, e.g., that of 'the
theory of the chemical bond of the nineteenth century, which exclusively
used valency lines and the modern quantum-mechanical theory of the bond.
It was the modern theory which ~;ave the valency line.,3 their physical sexis-i-,
thus discovering the physical nature of the chemical forces. There are
7 figures and 19 references: *17 Soviet-bloc and 2 no:a-Soviet-bloc.
Card 4/6

893h.9
F1016160101410-~11_00110C'!
The principles of the electron... B103/B2C7
ASSOCIATION: Institut fizicheskoy khimii Akademii nauk SSSR (Institute of
Physical Chemistry of the Academy of Sciences USSR).I,,oskovskiy
gosudarstvennyy universitet im. M. V. Lornonosova NO sco%
State University imeni M. V. Lomonosov)
SUBMITTED: June 6, 1960
CO
Ct Cz CO
O_CO
b _tl__ tt
C _b a C
Fig. 2 Fig- 3
Card 5/6

The principles of the.electron...
Legend to Fig, 4a: k -' donor level
D - acceptor level.
u
D
Leeend to Fig. 7: 1) Fermi level.
Card 616
893149
P/ol6/6o/ol4/011/001/001
B103/B207
qO I
0
b
Fig. -4
-rmieao 4
0
C Tic.

'k # t7loo 11 14250
.A 115-5 S/076/60/034/009/012/022
~_114 bD B015/BO56
AUTHORS: Vollkenshteyn, F._ F. and Kogan, Sh. M~
TITLE: The Concept of the "Quasi-insulated" Surface in the Theory
of Chemisorption I
PERIODICAL: Zhurnal fizicheskoy khimii, 1960, Vol. 34, Ra. 9,
pp. 19016-2004
TEXT: This is a discussion on semiconductor"An which the surface states
have a denser structure than the interio� of the body., which is the cass
if the semiconductor has a real and not an idealized surface. Besides, the
concentration of the electrons and holes which are localIzed on the sur-
face, may be very high. It is shown in this case the position of the
Fermi level PS on the crystal surfa-,e is independent of the position of
the Fermi level FV in the interior of the crystal, which meano tha-, also
'the chemisorption- and catalytical properties of the ssemicondUCtOT surface
are independent of the electronic properties in the interior of t-he
crystal. Surfaces of this kind are described by the auth-ors as
Card 1/2

84250
The Concept of the "Quasi-insulaTed" Surface S/0'1'6/r-iC)/'()34//009/0!2i"022
in the Theory of Chemisorption B015/BO56
f'quasi-insulated", and occur whenever the absclu-ce value of the difference
between the positive and negative charges localized on the surface is
0 1 ;
small in comparison to -their sum. In the case f "q'u as 4 -'nsulated" sur-
faces, the influence of the crystal impurities upon the chemiForption-
and catalytic properties vanishes, and only the stj~ucturo of he surface
is significant. Several SDecific properties of the "quasi--inoilated" Sur-
face are explained, and th-ree types of surfacelstates are mertioned,
which lead to a "quasi- insulated" surface. There are I f3-g-,Ir,, and 10
references: 9 Soviet and I US.
ASSOCIATION: Akademiya nauk SSSR Institut fizicheskoy khimiii (Institute
of Physical Chemistry of the Academy of S:iences USSR).
Moskovskiy gosudarstvennyy universitet im. M. V. Lomonosova
(Moscow state University imenI M. V. Lomonosov)
SUBMITTED: December 22, 1958
Card 2/2

Li 6b o 31087
S/195/61/002/004/001/CO8
2- 1-1 .-1 Lx 0 E036/E455
AUTHM, Y-ol I kensh-te
TITLE. Influence of ionizing radiation on the adsorption and
catalytic properties of semiconductors
PERIODICALt Kinetika i kataliz, v.2, no.4, 1961, 481-489
TEXT: In this article the effect of ionizing radiation on the
adsorption and catalytic properties of semiconductors is examined
in the light of the electron theory of chemisorption and catalysis,
The mechanism by which the radiation influences the adsorption
equilibrium, the kinetics of adsorption and the rate of catalytic
reaction is analysed and is derived directly from the general
concept of electron theory, The dependence of the radiation
effect on temperature and pressure and on the history of the
sample is considered, The effect of radiation on catalytic
processes and adsorption has been well established by exper-iment'll
work over the last few years but the mechariism remains unRnot-In-
The present article is limited to establishing soine getieral la%rs
derived from electron theory, The following three effects are
obtained during irradiation-: (a) direct ionization; (b) change cf
V~
Card I/ $,-I

-1087
SA95/61/002/004/001/008
Influence of ionizing E036/E455
degree of disorder in the lattice and (c) nuclear reactions,
All these give rise to a change in the concentration of free
carriers, In the first of the three cases, this change is due to
non--equilibrium carriers and, in the other two cases, to
displacement of the electron equilibrium., The first effect
disappears when irradiation ceases; the second may be considered as
due to sample heating, The third effect is irreversible and arise5
from the introduction of chemically foreign impurities. Ac--ording
to the electron theory of catalysis and adsorption, the free
carriers participate directly in chemical processea at the surfaLe,
The carriers behave as free valence electrons and thus the
concentration change gives rise to a change in adsorption and
catalytic properties, Electrically, the surface particle may be
neutral or negatively or positively charged, exhibiting
correspondingly different bond characteristics., bond strengths and
reaction ability, The various reaction abilities depend upon
whether the state is valence-satisfied or involves. radicals or
ionic radicals- The expressions for the relati-ve concentratj_ons
of these states in the unirradiated condition are written down for
equlllbrlum, The negai:ive- and the pcsitivel)~-_harged particles
Card 2/9 ")

31087
S/195/61/002/004/ooi/oo8
Influence of ionizing E036/E455
are considered as localized acceptor and donor levels respectively,
The expressions have been given by the author in Rcf.l (The
electron theory of catalysis in semiconductors, Fi2imatgiz, M.,
1960) in terms of the difference between the levels and the
conduction or valence bands and the Fermi level at the surface,
Some simple expressions are then written down in terms of the
carrier concentrations in the presence and absence of irradiation,
In these expressions, the relative numbers of particles in the
three states of the radiated sample are related to those in the
unirradiated sample. If the condition before equilibrium is
considered, quasi-Fermi- levels must be introduced. These
derivations have either been obtained by the author in previous
work (Ref.lz as quoted in text and Ref.3: Izv. AN SSSR Otd. khim,
n., 1959, 1536) or may be derived by analogy. It is shown that
irradiation gives effects equivalent to displacement of the
localized acceptor and donor levels In the energy scheme. The
amount of the displacement depends on the position of the level in
the energy scheme and on the conditions of irradiation. The
change in the adsorbing properties of the surface during
Irradiation is indicated by a change in the pressure 4P in the
Card 3/A,)

M
31087
S/195/61/002,,'004/001/008
Influence of ionizing E036/E455
volume of the phase being adsorbed when the radiation is applied.
AP is related simply to the change In the total number of
particles in the equilibrium conditions of the sample with and
wIthout irradiation. It is shown that the sign Zind relative
magnitude of AP depend on the position of the Fermi level in the
original, unirradiated sample, The point at which the change of
sign occurs - the change from desorption to adsorption or the
reverse - is dependent on the conditions of irradiation, This
simple treatment can be used to interpret the results given by
Y.Fujita, T.Kwan (Ref.4; Bull, Chem, Soc, Japan, 31, 379, 195~)
and by A.N.Terepin, Yu.P.Solonitsyn (Ref.5~ Disc, Faraday So~.,
v.28, 28, 1959)~ In general, the change of adsox-bing properties
due to irradiation depends on the nature of the radiation- on the
pressure of the gaseous phase, on temperature and on the previous
history of the sample, All these factors are evident from the
analysis. For simplicity- only a small degree of filling of
the levels is assumed, an assumption made in the ZLnalysis of the
kinetics of adsorption, Here expressions are de2-ived for the
px-essure in the volume of particles being adsorbed: the pressure
is given.as a function of time and in terms of the number of
Card 4/0"~

31087
S/195/61/002/004/001/008
Influence of ionizing B036/E455
particles adsorbed. The relative number of neutral particles
is the ratio of neutral particles to the total number of particles,
The ratio is assumed to be independent of the pressure which
implies that the change in surface charge due to adsorption may be
neglected and is due only to non-ad5orption processes. A similar
exponential expression is quoted for the irradiated case. The
subsequent analysis is restricted to the case of acceptor
particles. It is shown that the sensitivity of the kinetics -
the variation of pressure with time - can be varied by the impurity
content of the sample, which determines the position of the Fermi
level. In addition to this simple case, where adsorption
commences at a time t = 0, the article considers adsorption on a
sample which first remains unirradiated up to time t1, after
which the radiation -is applied until t = t2 and then ceases.
In Fig.4 the curves of pressure of the phase being adsorbed are
plotted as functions of time in some typical experiments of this
type. Similar curves are observed experimentally. The dotted
lines correspond to behaviour in the absence of irradiation,
Note that the subscript 'loll denotes absence of irradiation, The
light lines denote continuous irradiation from t ~ 0 to t
Card- 5/,8 1)

31087
S/195/61/002,/004/001/008
Influence of ionizing E036/E455
The various cases correspond to differing initial conditions of the
sample, the position of the Fermi level and to the differing nature
of the irradiation, It is seen that both desorption (FIg.4a) and
slowing down of adsorption (Fig,4 6) are possible on commencing
irradiation and that the effects may be reversible (Fig,4S) or
irreversible (Fig.4 Z.). The time at which the radiation is
applied is also Important- For catalytic effects -the case of The
oxidation of CO is considered, Again the analysis of Ref.1 is
quoted for donor- and acceptor-type actions, giving expressions for
.reaction rates in terms of the Fermi level position and the levels
corresponding to the molecule C02 and the atom 0. The irradiation
conditions and the position of the Ferm3_ level in the irradiated
specimen can enhance or reduce the reaction rate, but the ratio of
the partial pressures of 02 and CO enter as a further variabli_~,
Again the experimental results can be discussed qualitatively in
terms of this model- Impurities In the semiconductor affect
catalysis-, this action can also be described by tho same model,
All the phenomena discussed depend on a parameter which is a function
of the acceptor energy level, the initial Fermi level and the quasi
Card 6/X)

Influence of ionizing
31087
S/195/61/002/004/001/008
E036/E455
Ferm! levels for holes and CleCtrons arising during irradiation.
A similar parameter is required for donor-like particles. At no
stage in tile paper is a c1iiantitative evaluation attempte(l. Among
the effects ignored is the possibility of impurities diffusing from
the semiconductor bulk towards the surface and reacting with the
adsorbed ions. There are 5 figures and 10 references: 5 Soviet-
bloc and 5 non-Soviet-bloc. The four most recent references to
English language publications read as follows:
Ref.4: as quoted in the text;
Ref.6: T.I.Barry, Report on the Second International Congress on
Catalysis, Paris, 1960;
Ref-7: F.Romero-Rossi, F.S.Stone, Report on the Second
International Congress on Catalysis, Paris, 1960;
Ref.10: T.I.Barry, F.S.Stone, Proc. Roy. Soc., A255, 124, 196o.
ASSOCIATION: Institut fizicheskoy khimii AN SSSR
(Institute of Physical Chemistry AS USSR)
SUBMITTED: March 3, 1961
Card 7/0')

VOLIKENSHTEYN, F.F.0 doktor fiziko-matematicheskikh nauk, prof.
Semiconductors as catalysts. Nauka i zhizn' 28 no.8:11-15
Ag 161. . (MIRA 14:81
(Semiconductors) (Catalysts)

BAWIDIN, A.A., akademik, red.; KOWZEV, D.I., prof.,, red.; LE-13MN,
V.P., dotv.p iam. red.; YALITSEV, A.H., zan. red.; ACREOLO-1-M,
A.Ye., dots., zar-. red.; TOFCEI'Y~A, K.V., prof'. red.; ymty-,,
Yu.K., prof., red. P;I-TCIIENKOV, G.M., prof., red..; SOKOLISKIY,
D.V.,, akademik,, red.; VOLIMISHTLIN F prof'.,, red.;LAZAIZVA,
L.V.,, tekhn. red.
[Catalysis in the institutions of higher learning; papers of the
First Interuniversity Conference on Catalysis]Kataliz v vys.9hei
shkole; trudy. Moskvaq Izd-vo Mosk. univ. No.1. Pt.2. 1962.
325 P. (MRA 15:10)
1. Mezhvuzovskaye soveshchanive po katalizu. 1st, 1958. 2. Aka-
demiya nauk Kazakhsko-i% Sc~! (for Sokol' skiy)w-3,~-Ntd=taheski-y fa-
S. c
kulftet Moskovskogro gosudar6tvcnnogo universitota (for Yurlyev).
(Catalysis)

~6 Mia (i)/Ewd (k)/BM: AFFTC/ASb/ESA73/IJ~'(C) Pze-h AT
3.:
ACCESSIO14 11R: AT3002U6 S/2935/62/000/0300'0114/0127
ATJTHOR-.: Volt kenshteyn, F. F.; Karpenko, I. V. 7
TITLE Theory of,photoadsorption effect o semiconductors 9-. ['Re -at the Conferenm
port
on Surface Properties of Semiconductors, Institute of Electrochemistry, AN SSSR,
::,lmoscow, 5-6 June 1961j
SOURCE:~Poverkhnostny*ye svoystva poluprovodnikov. moscow, .:rzd-vo AN SS5,R, 1962,
14-127
:-~~TOPIC TAGS: 3emiconductor, semiconductor the6ry, photoadsorption effect
_-ABSMGT:.k further.development is offered of the theory,of photoadsorption
effect. (variation of adsorbability with illumination) . Spectfically, a criterion
abl-
is es'. -ished which determines the sign (plus-minus) of photoadsoxption effect
b b
:under.various conditions: adsor en' and adsorbate nature pressure, temperature
~specimen prehistox-f, etc.'The sign depends on.the position of the Fermi level and
on the degree of band bending. The theory,is checked against. the published
experim-ental,data obtained by F. Romero-Rossi, F. S. Stone, T. 1. Barry, Y. Fujita,
~.T. Kwan, A. P. Ter6nin, Y. P. Solonitzin, and others. Orig. art. has: 2 figures
and 22 f o rmul a s .
PHYSICAL CIEMUSTIE, AN SSSR; MOSCOW STATE 1111177,RSITY-
ASSN: INSTITUTE. OF
Card 1/-0
MME

EPF(c)/EWT(1)/ZWP(q)/EWT(m)/BDS AFFTC7/ASD/ESD-3/
IJP(C) Pr-4_. _ Gg/PM W MAY/JFW/qG
ACCESSION NR: AT3002452 S/2935/62/000/000/0179/0192
~AUTHOR: Volckenshteyn, F. F.; Gorban', A. N.
_~ol!!ir, V. A
TITLE% Processes of recombination of free radicalsion a semiconductor surface
and their role in luminescence rgonference on Surfac Pronertieq of Semiconduct
Tn_-ttitute of Eleotrochemistry, AN '~izjbn' Moscow June,
5-6 lybij
SOURCE: Poverkhnostnyye svoystva poiuprovodnikov. Moscow, Izd-vo AN SSSR,':
1962, 179-192
TOPIC TAGS: semiconductor, semiconductor -surface characteristics,
luminescence, surface recombination
ABSTRACT: On the basis of the electronic theory of chernoseoption and catalysis,
the radical -recombination mechanism of luminescence is exazi2ined. as wen as j
some consequences ensuing from that mechanism. A theoretical and experimen-~,-
tal investigation is reported of the effect of an external transverse electric fieldi
upon the intensity of candoluminescence. Luminescence Is considered as
Card 1/2

L 18992-63
ACCESSION MR: -AT3002452
consisting of two steps: Ionization and neutralization of &a activator atom; the
accompanying phenomena are explained and pictorially represented. A new
formula describing the intensity of luminescence is developed, and the effect ol.
the Fermi level on the intensity is investigated. The effect of the electric field
on candoluminescence was studied in a special device on a ZnS-CdS.,copper-
activated phosphor placed in a low-temperature lighting-ga Potentials
-Zkv and +Zkv were applied to the electrodes producing the electric field in the
phosphor zone, and the variation in the luminescence intensity was measured.
The experiments are interpreted as corroborating the probability of the radical-
recombination mechanism. Orig. art. has: 7 figures anti 26 formulas.
ASSOCIATION: Institut khimicheskoy fiziki AN SSSR (In~stitute of Chemical
Physics, AN SSSR~, Institut fizicheskoy khimii AN S_S_,6_3R (Institute of Physic~ll
Chemistry, AN SSSR)
SUBMITTED: 00 DATEACQ: l5May63 ENCL: 00
SUB CODE: PH NO REF SOV: 009 OTHER: 002
Card 212

L 189934i63 EWP(.q)/EWT(m)/BD9 AM -C/AST) MIA13
ACCESSION NR: AT30OZ453 S/Z935/62/000/000/0192/0Z06
F. F.-. Kuzr-ietsov, V. S.. Sandomirskiy, V. B.
AUTHOR: YollkenshtSy
A TITLE: C nd catalytic properties of semiconductor film on
ol
nference on Surface Properties of Semiconductors, Institute of Electro-
'j metal I-C-0
chem ry, AN SSSR, Mose , 5-6 June,1961J
SOURCE: Poverkhnostn)Pye ovoyetva poluprovodnikov. Moacow, Izd-vo AN SSSR,:
1962, 192-206
TOPIC TAGS: chemosorption, semiconductor, catalysis, semiconductor -coated
metal
j ABSTRACT: Since many metals are always coated with it binary-compound film,
chemosorption and catalytic processes actually transpire, on the surface of a
semiconductor. A theoretical investigation is offered of these processes. A
rather thick semiconductor film that does not contain surface states and a posi-
tive contact potential dix'ference are assumed; four energy schemes are
Card 112

14'.18993-63
ACCESSION NR: AT30OZ453
4~onsidered. Qualitative properties of the fillrn adsorb%bility and its catalytic
activity are described by a set of differential equations. The effect of the film
thickness on the work function is explored. It is found that: (1) With a specified
nature and thickness of the film, its adsorbability with respect to a donor
(acceptor) gas will be higher (lower) with a higher work fujxction of the underlying,
metal, irrespective of the sign of the surface charge on the film; and (2) A
similar relation exists between the catalytic film activity anil the donor
(acceptor) reaction. Orig. art. has: 3 figures and 36 forEadlas.
ASSOCIATION: Institut fizicheakoy khirnii AN SSSR (Institute of Physical
Chemistry, AN SSSR); Institut radio elektr oniki AN SSSR (Lzistltute of Radio and
Electronics, AN SSSR); Institut kataliza AN SSSR (Institute of Cata.1yois, ANSSSR)!
SUBMITTED: 00 DATE ACQ: l5May63 ENCL: 00
SUB CODE: PH NO REF SOV: 002 OTHER:- 001
i'C',d 2/2

AUMiu2,S Vo I I ke ns [it e y!i
,_F. F. ,
TITLE: On the theory of the
semiconductors
P-I'A'10DICAL; Kinetika i Rataliz,
E039/Z136
and Karperd-co, I. V.
photoadsorption. effect in
v-3, no.!, 1962,, 72-60
TEXT: The exposure of semiconductors to light sametimes
sti.mulates a chaiage In the adsorptive capacity of the surface:
in some cases there is an increase in adsorption and In othaer-~'
a decrease. The existing experimental data appear to be
inconsistent, but in this paper a theory is advanced, based on
the electronic theory of chei-,iisorption, which explains these
positive and negative adsorption effects. The concentrations
corresponding to free electrons and holes in the surface of a
semiconductor are represented by nos and pos in tht2 absence
of light and the corresponding changes in concentration
Theaulhars u!5e
stimulated by exposure to light are L\n, and Lp
the expression:
Card 1/9-

On the theory of the pliotoadsorptiori. S/195/62/oo3/cc i,,1cc:-/,,~ 1c,
'*E039/EI36
L nS Pos
-Y nos, APS exp Vos + v)/kT-: - 1
where the meanings of the values C, Vo 6 and v are f-wident
from rig.1, which repre6ents an erierg-y dia rami for a -Semiconauctor
with a negatively charged surface. The line FF is tli(--
level in the non-illumiriated condition. A is the local stirface
level (acceptor and donor) representing adsorption of particles.
The sign of the photoadsorption effect depends on the sign of
y, and the problem reduces to a calculation of the quaritities
Ln. and Lps. The final expressions obtained are:
/IT . -)
n + j (- V
exp /kT)
s 0 s Os
I~Ps + is) exp (+ Vos /kT)
0 D
Card 2/5

On the theory of the photoad-sorption...
E039/E136
where Io is the intensity of the light. It is shown that tlic
sign of y is determined by the 5i-n of y wh C r e
Y = e + V v (19)
Hence 'we have:
(a) For acceptor particles:
Positive effect (photoadsorption) if 9 Z- 01
Negative effect (photodesorption) if y -.;~-O.
(b) For donor particles: (,21Cj
Positive effect (photoadsorption) if ip ;70,
Negative effect (photodesorption) if Y < 0..
The results are discussed in detail and the theorv compared with
experimental data; irk particular for the case of adsorption of
oxygen on zinc oxide. The sign of the effect depends on the
pressure, temperature and also the presence of exce55 zinc in the 11Y
ZnO samples. There are 3 figures.
Card 3/5

S/19 2/003/00 1/004/6 10
On the theory of the photoadsorption...
E039/E136
ASSOCIATION: Institut fizicheskoy Ichiinii AN SSSR
(Institute of Physical Chemistry, AS USSR)
Moskovskiy -osudarstvennyy universitet im.
N.V. Lomonosova
(J~;oscow State University irieni M.V. Lomonosov)
SUBMITTED: September 28, 1961
Card 4/5

L
IL2109
S/195/62/003/005/003/007
E039/E135
AUTHORS: Vollkenshteyn, F.F., Kuznetsov, V.S.1, and
Sandomirskly, V-.-B-.
TITLE: The chemisorption and catalytic properties of
semiconducting films on metals-
PERIODICAL: Kinetika I kataliz,.v.3, no.5, 1962, 712-723
TEXT: The case of a metal covered.with a plane parallel film
of uniform semiconductor (e.g. its oxide) containing donor and
acceptor centres uniformly distributed throughout its volume is
t*reated theoretically. Energy diagrams are given for coatings
with a thickness L greater than the scriening length e and for
the case when L 4 f with a net positive or negative surface
charge. Owing to mathematical difficulties only the sign of the
following derivative8;is determined-for,the..varicous conditions*:
(dC/dL) p. T,
(de/dX) p, T, L
Card 1/3

4
The chemisor'ption and catk*tic
I- I
(do/dt) (do./de)
Ps To 4 p,
(dGldX) p, To L P,
(dg/dL) P1 To X = (dg/de) p, T (de/dL) P1 I's X
(dg/dX) p, To L = (dg/de.) p, T (de/d;() p$ T 11 L (9)
Here: e is the work function of the film, characterlsed. by the
position of the Fermi level at the external surface of the film;
X i--% the. work ftinction of the metal; 0 is the adsorptive
capacity of tho film; L8 the rate of reaction. It is shown
that the ad8orptive capncity and catalytic activity and
selectivity depend on thelthickness of the film. Experimental
verification of this work'is required. It j9holuld be noted that
for L to be less than -?, requires coating thicknesses of less
than 10-4-io-5 cm and for the coating to be'cbnsidered as an
independent phase L must be greater than :10-6 cm.
There are 3 figures.
Card 2/3
S/195/62/003/005/003/007
E039/El35
(dF-/dLI
T ps To
T (de/dX)
p, To L

The chemisorption and catalytic ... S/195/62/003/005/003/007
E039/E135
ASSOCIATION: Institut fizicheskoy khimli AN SSSR
(Institute of Physical Chemistry, AS-USSR)
Instltut kataliza SO AN SSSR
(Institute of Catalysis, SO AS'USSR)
Institut radiotekhnlki i elektraniki AN SSSR
(Institute of Radioengineering and Electronics,
AS USSR)
SUBMITTEDs February 16, 1962
Card 3/3

S/195/63/004/001/ool/oog
E075/z436
.:".-~'AUTHORS: Yol I kenshteyn,F Gorban', A.N,, Sokolov, V.A.
TITLE:'. :The processes of recombination of free rad$.cals on
the surfaces of semiconductors and their role in
luminescence
PERIODICAL: Kinetika.i kataliz,* v.4,-no.1, 1963,
TEXT.4 The authors examined the theory 'of'lumine;scence based on
the recombination of radicals at the 'semiconductor surfaces and
investigated*the i'nfluence of external transverse electrical fielo
on the intensity of candoluminescence. The luminescence was
stated to be caused by the combination of ionized atows with
-electrons from the solid'l ttice, the formatio f' ions being due
a n oi
to chemisorption. Ele,ctron -exchange resulted 'bet we en the local
.-.-levels of chemisorbed atoms and the lattice energy zones. The..
exchange with.the valency zones was thermal in character, whilst
'ithe exchange with the'conductIvity zones resulted frbm the
recombinati-on of radicals. ' The-luininescence was produced only
when the recombination occurred between chemisorbed atoms and
atoms from the gaseous phase. - The intensity of 'Ith4inescence was
determined by the Fermi level on crystal surfaces and given by
Card 1/3--,

L1115-66 EWT(1)/EWT(mll/EPF(c)/EWP(J)/T/EWA(h) -IJP(c)/RPL AT/Rhi/GS
ACCESSION NR: AT5020492 UR/MMAWWO/OWN57/0462
AUTHORS: VoVkensht2ni-F. F.j Gorban', A. N.; Sokolov,, V, A,
olm of semiconductor lu
TITLE., On the pr .,nascence resulting froin the recombina-
tion of free atoms and radicals on the surface
SOURCE: Mezhvuzovskays, nauchno-tskhnic konferentaln )o fizike
heskaya
1_1221uprovodnikov (poverkhnostwe I kontaktWye yavle J1. Tomsi-.-I~-62.
iFoverkhnostWe I kontaktnYve Yav-le-n-i-yii v Polu-provodni E-~-Suif-ac ontact
a and a
phenomena In semiconductors). Tomsk, Izd-vo Tomskogo unJ.V,,, 1964m 457-462
TOPIC TAGSt semiconducting material, luminescence, free radical, lectric fieldp
zinc sulfide cadmium sulfide, Fermi level
ABSTRACT: 'A mechanism of radical-recombination luminescence Is proposed, and an
experiment conducted to confirm aspects of the theory of semiconductor lumines-
cence is described. The work was performed to supplement-the authors' earlier
research in this area. Tests were run to determine the effect of a field on lumi-
nescence. Radicals of hydrogen and air were formed by electric discharge (�5 Iff)
under a pressure of -Imm Hg in a tube about 2 at long and 3 cm In diameter, con-
taining ZnS and CdS-Cu phosphor. The experimental results confirmed qualitatively
Cardl/2
- - ----------
L--~V
For

wwwwd
L 1115-66
I
ACCESSION MR: AT5020492
that the Intensity of luminescence Is dependent upon the location of the Fermi
level and confirmed also the theoretically expected effect of an electric field
on the adsorptivity of a semiconductor surface, Orig4 arts hass 2 diWamp
2 graphs,, 1 table, and 9 formulas.
P3SOCIATION1 nons
SUBMTTED: O60ct64 ENCLI 00 SUB COM SS
NO REF SM 00`7 OTHER: 002
I Card 2/2.

1690CIATION: -Inratitut-fizicheskoy'. khimii AN SSSR - (Ustillit t oLk~aigal Chomistr"N
Ys -Fiz-f--h
~gtR ic eskiy fakulttet Makovskogeogesudarstvennogo
-im Lomcnosova (2~p~
iniversitetA.- M. V. artme~ntof ~Ps~icgj KoSca!~ State Univemi
D
UBMITTE -20E
co
140, Emr
:4

VOL 'KEN,514TEYHr
:r: of seIe rig
cc, Zhur. Iriz. khim, 3,"j no,8:1809-1816 Ag f65.
(MTIRA 18-9)
1. Instatut flzi,:~Iieskoy kh2mil AN SSSR.

.66 EWT(m)/T
AP6002430 SOURCE CODEt URA)020/65A65/005/1101/12-04
Volikenshteynt F, F,; KLrpenkog I* Va
.il ORG: Institute of Physical Chemistry, Acadeny of Science, SSSR (Institut
fizicheakoy khimli Akademii nauk SSSR)
TITLEz. Displacement of the adoorptionliquilibrium on the stwface of a semi-
conductor due to illumination
-SOURCE: AN SSSR.. Doklady, v. 165, no. 5p 1965p 1101-1104
TOPIC TAGS: semiconductor theory, semiconductor research, semiconductor conduc-
tivity, photoeffect, gas adsorption, semiconductor
ABSTRACT: The authors attempt a theoretical:treatment of the photoadsorption
effect and present a discussion which is an extension of 'their previous work on
i the same topic (Kinetika i kataliz, 3, 72, 1962). The dil3cussion is based on tho
following, explained by a model-shown in Fig. 1. where A Is the localized surface
level of the chemisorbed particle, IT, - Fermi level in the nonilluminat6d spec-
imen, and all other quantities are defined as in F. F. Vollkenshteyn (Kinetika. i
kataliz.. 2t,481,, 1961). On the basis of the proposed modol,, it is concluded
UDC;i _5 .183.03
Card 113

ACC NRt AP6002430
w
Fig,, la Schematic of the energy level
distribution for the proposed VM
model of the photoadoorption
effect.

N
.
Aw

that-there should'extuta correlation betwe en the pho toadoorptive effect atd the
'Card 2/3

.L-, j-B57-o---6-6--
ACC, NR: AP6002430
work function-of the semiconductor surface. The equation for the inversion point
of the photoadsorptive effect is derived as
ID, 4DM b I eXP (E~T =F V~4,-
wh
are
defined. by
N - No mini AM
No X.-
in which Nand N are the surface concentrations of the chemisorbed particles
0
is the work func-
in the presence and absence of illumination res ctively. Von
Pe
tion, I is thelight intensity., andV T is defined in Fig. 1. It is stated
that more experimental work is necessary before a conclusive teal of the proposOd
theor7 for the photoadsorption effect can be mada6 This paper ,ms presented by
Acade-;zdaian M. M. Dubininyra on 28 Jully 1965. Orig. art. 13as: 2 grephs and
11 equations.
SUB CODE 20/ SUBM DATEi
Card 313
26jul65/ ORIG REFj 005/ OT11 M, 001

FIGUROVSKAYA, Ye.N.-, ViOLIKENSHIT:YN, F.!'!'.
Eff*ect of chem-isorption of oxygen or, the work function and
conductance, of titanium dioxide, Dokl. AN SSS~--
1145 Ap 165. (MIRA 18:5)
1. Moskovskiy gosudarstvennyy liniversitet i Instlitut fizichesl~oy
khimii AN SSSR, Submitted October 28, 1964.

L .36184-66 _EWT
I ACC NRz AP6010745
SOURCE CODE: Mi/0076/66/o4o/0O3/O574/05?9
AUTHOR: Peshev,,. 0 1161'kenshte~Mj F, F.
ORG: I-Soscow, State University im. V.
sitat); Institute of Physical Chemistry, ;4cadqL-j--' 7'LcTSqpj J'S'j-' (Institut fi'_ cacj~;-
koy khirH Akadem-ii nauk SSSR)
TITIS: Certain irreversible processes in chemisorotio-I on somiconductors
SOLUC-1,,: aiurn,%l 1"izicheslkoy khimii, v. 40, no, 3, 1966, 5?,"---579
TO?IC T.A:GS: chemisorption, desorption, sor~Aconductor carrior, adsorption
Y"C!TIRACT: The -ooss-ible nature of the reversible and irreversible forms of chomisorz.-
tion is considered from the standwint of the electronic theory (F. F. Vol'kenshteyn,
SlGctror,';_c Thoox7 of Catalysis on Semiconductors, Fizmatgiz, 19050). 7he discussion is
1-iMited to the case of a homogeneous surface and to the adsorption of an acceptor gas
whose na::-t-_cles are in two charge states, negative and neutral. The irreversible forml
Of' chemizoi-ption may have a dual nature: (1) it may b3 due to the hindered desorption
'(2)
o' -Oart`clas in the charged state (mechanism of "apparent;' irreversibility) and
it may result from the nresence of a secondar-f chemical Drocess on the surface of the
i t, to
3m con' ctor, such as 'Che reaction of t'he chemisorbate with the iumuri y comi
s
e surface from the volume of the sericonductor (mechanism of 'Itrue" reversibilit-7)
."n ir
Card 1/2 UDC'. 541-183

L 36184-66
ACC NR-. AP6010745
Criteria are given for distinguishing those two mechanisms em)erimentally. Orig. art.I
has: 5 figures.
SUB COM: 07/ Sum DATE: 26Dec64/ ORIG REF: 004/ OTH REF: 002
Card 2/2//,

----t-26481-66
PGO13069 SOURCE CCDE: UP./0048/66/030,/004/0633/0636
Auruom- Sokolov, V.A.; Volfkenshteyn, F.F.; Prik, O.G.; Kondratenko, W.B. /9
Otrj:' None
TITIZ-: Concerning the role of radical-recombination processes in c"oluminescence
port, Fourteenth Conference on Luminescence held in Riga 16-23 September 19657
SGURCE: AN SSSR. Izvestiya. Seriya fizicheskaya, v. 30, no. 41, 1966, 633-636
TOPIC TAGS: recombination luminescence, chemiluminescence, criindoluminescence
ABSTRACT: Although candoltaknescence - luminescence under the, Influence of a il ame
has been questioned for many years, the authors assert that the existence of this
phenomenon has def inItely been proved. The mechanism of canda,lumineseence was hypo-
thetically developed by one of the authors (F.F.Vollkenshtein, Elektrannaya, teorlya
kataliza na poluprovadnikakh, Fizmatgiz, Moscow 1960) on the basis of the electronic
theory of catalysis and chemisorption. on semiconductors and has been discussed and de-
scribed in other publications by F.F.Vol'kenshtein et al. According to this mechanismi
excitation occurs at the expense of the energy relea" incident to recombination of
free atoms and radicals in the flame on the surface of the phQsphor. In the prese t
paper there are adduced the inferences based on the radical-recombination theory as
regards the influence of extraneous gaseous impurities on the Intensity of cando-
Card 1/2

-L 26481-66
x~-CNRs AP6013069
luminescence and there are described the results of attempts at experimentgkI verifica-f
tion of the predictions. The inert Can employed in the main oxperlments was nitrogen
nnd the phosphor was ZnS*CdS:Cu. A figure gives curves characterizing the variation I
of the luminescence intensity of the phosphor with the nitrogon concentration at dif
ferent temperatures. Another figures shows analogous curves characterizing the in-
fluence of CO and 02. Comparative experiments to evaluate the, recombination coeffi-_
ciant were carried out with non-luminescing CuO. On the basis of general analysis
of the data it is concluded that radical-recombination processes play a significant
role in excitation of low-temperature luminescence (which, it is asserted, is true
luminescence according to the Vavilov-Wiedemann criterion) but also in excitation of
high-temperature candoluminescence, which is a special form of equilibrium emission
that is not true luminescence. Orig. art. has: 2 formulas aul 3 figures.
SUB CODE: 20/ SUHK DATE: 00/ ORIG R9F: 0071 OrH REF: 001
Card 2/2

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11CLIKIE-11311TEIN, Y. V.
PRILEZHAY-EVA, E. N.1 SYREIN) Ya. K. and VC-I,Ik:hFSH,LfV;, P. V. CA: -31 4 - 5'/'S 6 / 5
(Karpo Inst. Physical Chernistr , Foscow: State Univ., Yinsk)
Acta Physicochi~7~S 12, 176-80 (1940) - in English
The Raman spectra of halogennted ethy2enes. Freliminary note

Tj
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Fngii&h' , - c1. C. A. 33. 71JUM"; 34, 4W P.-Frun, WIPti.
004 .00
dam an ue Ratuan spectra fat the systan (CH.)vO +
004 n IICI with x - 1. 2.3 at tempy. frAmn -80 to +W" G..
0 V. and S. find that intclaction causes a lovirwind of the
valclicc frequCticy of the C U-C it"ItIn. all lncrra~c IA
that of CH. " of the defocittatiun ficquemy of C -0-C.
0 4E
For 1: 1 tnixts. the dispLument of the CIL and C-0-C 00
thraingbout thte tong. traiMe studied.
frequeacks is commit
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0019 CH 00
Cl-. . . . HCI and the 5W line to a
cll~u .... 0 0
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VC-LIKENSHITED-1, I-,. V.
SECRYGIII, F. P. and ;'. V. U: -, -, - -, -11 :7 ~
I ~/-
(Karpov Inst. Fhys. Chem., I'Oscow)
Bull. acad. sci. URSS, -Ser. phys. 1041, 174-F1 - Enf-..1--sh suj~~!~-ary
Analysis of benzines by the hanan spectra. 17
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