SCIENTIFIC ABSTRACT VUKSIC, L. - VUL, B.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001961310002-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

. vUJZIC;,L. -a
-/ Z - o:3nii, r--Iri
4, 2~idc-, AoloE-j o' in 3aiid-a':,
IISO.-,io,-f 1 obleas of the L . A.L, ;-
Hercer--ovina in tho Years 1951-1952. 11 p. ;~3. k7g-b~ioz-.njitg!.sI-A
lle~c~,-j Rg-~do-y,-, Vol. -10, no. 112, J,-.nlFc',,. 1953. i';oograd)
SO: Monthl.,! List of Fast European Accesgions Vol. 3, no. 3. Library of Congress. March 1954.
Uncl.

VUKSIG, L.J.; MOREW, M.; ZDTIAVKOVIC, A.; MUN(AG, B.
A plan for the prevention of communicable diBeases in Seibia.
HIgijena 15 no.1/2:16-34 163.
k
i
I.

r, Lin 4 rl A F)--,-'
VUK,SZC LjLtbiw4---
'the civilian population during the war. Bibl.Hig.inst
1. Katedra n& higijany i apidemiologiju Vojao-madicinske akademije
JNA.
(WAR,
migration of civilian population during war)
(TRANSISMS AND MIGRAMS,
migration of civilian population during war)

VUKSIC,.jd,.--AASIC, B.: HM, D..- MDREW, H.; aMBEC, M-' MUDYABOVIC, M.;
ST0JXOYIC, Lj.; MIRKOVIC, M.; MLIVO.MIC, M. '
Isolation of Coxiella, burnetti from stable dust. Hig1jens.,
Be W . 8 no.4:240-245 1956.
1. Katedra sa, Hig1jenu I epldemiologlju YKA. Virumolo3ko
odeljonje Higijanekog instituta NRS, Beograd.
(COMILLA BTJRMMI,
Isolation from stable dust (Ser))
(DUST,
Isolation of Coxiells, burnottl from stable dust (890)

e P.,.
ver; isolation of
A
iian, progl,, Bcogr. 14 ~v),5: Z~I~ -2b
1. Yntedra za higijeroz I TIA
institut,
C~ FEVER, microb!o!
isolation of wxiel bi burriett i fro,-~
13nme)

&Lh~4~_,Jjuboklr , cani tu Loki ARSIC, 110goijub,
!~~!W) T YaH Jan, gomral-major
.irAtetoke oluwbe
Development of the c1d.dondlol.q.,ic doctrine on dyaontery
in the Yugoslav flational Army. Vojnoaanit. pregl. 22 no.6:365-
370 Je 165.
1. Vojnomedicinska ukaderaija u Beogradu, Higienski za-rod,
Epidemicloskl institut.

MORELJj, Marjan, general-major sanitetske aluzb..,j profeo,,)r dr.;
ANDELKOVIC, DraGana, dr.,; VUKSIC Ljubomir, ossittetski
pukovnik profew dr,
Some apidemiologic aspects of diarrhoal diseaoeo in
Yugoslavia. Vojrosanit. pregl. 22 no.6:371-380 Je"65.
1. Vojnomediainska akademija u Beogradus Higijiqnski~mvod,
Epidemioloski inotitut, Savezni zavod za zdravotvenu astitu.

VUFS'IC,,, Ljubomir, sanitetski Fukcvnik, Frof. d4r.; JOVAYiOVIC, Tih~,rllr~
major, dr.; NIKOLIG, Bozidar~ sczite-Ski p:)4.ru~-frrn
k,
dr.
SUrilizatlan of syringos 17y boiling for the TABT vaccint.,'Llini in
tile Yugoslavian Army iu-id Its influence on Infectioun hepatAtIts.
Vcl~nosanlt. pregl. 21 no-501114-349 My 164
1. VoJnomt.,d1(An3ku dads-,mijn u Dios Traeai.

BIRTASEVIC, Ibzidar, sanitetski major, 6y.; BTCAKCIC, Wim, sanitetBki
pukovnik, dr.; VUYvSIC , Ljubomir, sanitetski pukovnik. profeqord.,-.
ftplosive epidemic of inoculation hepatitia. Ilojnosanit. pregl.21
no*5:322-325 My '64

VUKSIC, LJubomirs sanitetski pukovnik, prof.dr.
-1-- 71---
A mothod for touching military epidemiology. Vojnomnit. pro ;?0
no-9:577-585 0 163.
s

'IUGOSLAVIA/Virology Himan and Animal Viruses. E-3
Abs Jour, : Ref Zhur - Biol., No 4, 1958o 14613
Author ; Vuksich) Areich) Mel., Morel., Gerbets, Milovanovich)
gf6~~Vieh, Hirokovich, Milivoevich.
Inst
Title Isolation of Coxiella Burneti From Dust of Sheep Corrals,
Orig Pub Higijena., 1956, 8, No 4, 24o-245
Abstract No abstract.
Card 1/1
USCOMM-DC-55, 112

VUKSIC, L.J.
Contribution to the geograpbdo ~di tribu
Higijena, Beogr. 12 no.2/3:165-17,~ 160.
(Q FEVER epidemid)
of Q lever In Yugoslavia.

7APMOGNIYYp I.P. [zap-1-0001myly I.P.1; ZIMMOVY I.G, (Zhukov, I.H.1;
GARGA I.I. (Harbap 1.1.1; IMSTYCH, V.S. LYUkB+,Yahj V.S.]
Apparatus with a vacuum mcnochromL,'.or for ttudying opGjcal
excitation functions. Mcr. Fiz. zhur. 9 no.,,2.-19&-206 Ft64
(MIRA 17 27)
1. Uzbgorodskiy gosudarstvmmyy unkfSrSitet.'

A=SION NR: AP4017398 S/0185/64/009/i?~2/0196/0206
.AMOR: ZapisochrW*Y, I. P.j Mmkov, 1. 0.1 Garga, L Isl Wcsty*ch, V. 3
'T=1 Vacum monoohromator for the investigation of optical ex0itation
functions
SOURCE t UkraYins I kY*Y fi.zY*ch:V4Y zhuziial ve 9no e 2, 1964, 196-206
MPIC TAGSs vacuam ultraviolet, vacuum ultraviolet spectrosoopVt resonanco)
level excitation cross-sootion. wmitation oross-aaction, resonance radiatLon.
ultraviolet monoohromator, vacuum monochromator. electron beam mmitation -hiba,.
mercux7 resonance lines
AMTRACT: There are practically no data at present on the effective excitation
cross sections of resonance levels of atoms. diatomic molecules &rA their 'Lons
of various multiplicity, owing to experimental difficulties in the -vacuum
ultraviolet region of the iqwotrum.
To obtain such data the anthors have construo-wd a spia"hotonetria
set-up, consisting of three basic unitas a vac= monochrozator of ncrmal
inoldence Ath a one-wL-* (600 lines/=) stand".conom diftraatlAi cral:inv
Carj
Y-

'ACMSION NRt AP4017398
Jhghly monoonerrorio electron be= excitAt3on tubes; an OldctrOPhOtOmotor using
a secondary e2notronio multipUer (M) in a pulse counting reg" for recork.'J'a
radiation in the vacuum ultraviolet region.
The monoohromator was desiped so that the refraction grating and M41ALr
attached input and output ~rlits are'always on the Rowland oiroumference.,, Tnmp-
nission of movement in the vacuumis accomplishod through bellows, while the
kinematic system ensures linearity of the graduated graph throughout the
working region (800-3500 A)*
The luminous vertical gas colurn in the excitation tube may be preciselir
set on the input slit under control of a distance exage consisting of two
telaseopes, for which the possibility of moving part of the monoohromator
housing from the input alit is providede This permits the maximum utiliz&tiAm
of the Ught p(xmr of the monochromator (the loss in resolving power is
negligibleo sLnco the intervals between the spectral lirm are considerabla J'or
most obJeots)e
The open i4pe MM, together with the voltage divider and the cathode
repeater are located directly behind the output slit of the monochrocutor in a
special shen. Ths puU9 count is takon with the 9.IAI of a standarld 4A.
Velocity motor.
Card 2/4

ACCESSION URs AP44DI7398
The block diagram and the external appearance of the "atrophotometrin
sot-up are shown in the appended drawings.,
In conclusion, tentative data are given an the exo1tation funotions of
oury 2ines X-186o A. (Ng 1) and 1-042 k"(Hg 11).
Orig- Art, h&3 3.0 figumm ino. liulins several iohematias '" bleak diwWram
AS=TATIONs Uzhzorods'Iw*y Dorzhuniversy*tet (Uzbgorod State Univervito
SURaTTM i 13,Tu3.63 DATE ACQs I%Iar64 ENCL t 01
SUB CODEs PH, SD NO REF SOVt 009 OTHERs 002,
Card 3/4

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YUKURDY, Stanislav; PAVLOVIC, Dejan
Unusual variation of thormco-abdomina~ injury. Srpski arb.
colok. Isk. 85 n0-3:355-358 Mar 37,
1. 1 Hirurska klinika Nedicinskog fakulteta u Deogradu.
Upravnik; prof. dr. Bogdan Kosanovic.
(THORAX, wds. & JvJ.
thoracaabdominal caused by shot wd., Burg. (Ser))
(ABDOMEN, wds. & inj.
sat")

"awni a I Loy -,, S I MI Ca t ar
Disinsertion of the long head of the biceps brachii muscle.
Srpoki arh. calok. lak. 85 no.4:476f4S) Apr 57.
1. 1 Hirurska klinika, Hadicitiskog faktiltata u Bsogradu.
(Uprawnik: Prof. dr. Dogian Konanovic).
(ARM. musc. & tendons
disinsertion of lorg hand of biceps brachii (Bar))

AUTHORS: Vull, A.A., Eydellman, L.A., Engineers SOV-117-5e-8-14/26
TITLE.# The Cutting of Pipes by Turning Rollers (Rezaniye trub vrashcha-
yushchimisya rolikami)
PERIODICALt Mashinostroitell, 1958, Nr 8, pp 33-34 (USSR)
ABSTRACT: Turning disc rollers (Figure 1) are used for cutting copper
and copper-nickel pipes in order to avoid losses of material.,
The rollers &re made from steel R9, R18, or from the alloyed
steel KhVG. The roller is held in a special holder. The pipe
is fastened by a pneumatic clamp chuck. The speed of cutti&g
is 160 m/min. The new method increases the productivity 2.5
times. Losses of material have been cu"; in every ton of cut
Pipes, 215 kg of metal are saved.
There are 3 diagrams.
1. Cutting tools - Performnes 2. Copper pipes - Cutting
3. Copper-nickel pipes - Cutting
Card 1/1

VUL A.1 starabiy Inzh.; BAZYIDV, K.B.
Engineering departaont of the l4araganda Post Office,
Vest. aviazi 22 no.1:20 Ja 162. 041M 14:12)
1. Pochtovoye upravleniye Ministerstva. svyazi Kazakhakoy SSR
(for Vul)
(Karaganda--Po0al nC$l'lce)

A.I.; GUZKO, A.G.
Engineering oefice of the Alma-Ata post office. Vogt. sviazi ;!I
no-4:15 Ap 161. (MIRA .14:6)
1. Nachallnik laboratorii Alm-Atinakogo pochtomta (for Vul).
2. Vachallnik tekhnicheakogo kabineta Alma-AtInskogo pochtwnta
(for Guzko).
(Alma-Ata-Post service)

PALIY, A.M.; ANTSUPOV, P.V.; Mjj~L ~A.M. OVCHAROV, S.M.
Recent data on the gas potential of the ternaz7 sediments of
the isoutheastern part of the outer zone of the Carpathian
piedmont fault* Heft. i gaz. prom. no.4:6-9 O-D 164
WIRA Mel)

~4~. M1
L 02930 67 EWT d.)/EWT(l)____EEC(kj-2/T
AF60337,13 SOURCE COM UR/Ol42/66/0O9/OO4/)428/N_35
AUTHOR:, Vul', Vi;A.
_V
ORO: none
TITLE: A tunnel diodimemory cell for radio-freque-ncy,pulses
SOURCE: IVUZ. Radi+khnika, v. 9, no. 4, 1966, 428-435
TOPIC TAGS: computer memory, computer storage device, tunnel diode
ABSTRACT: A tunnel diode storage cbll has been developed in iihich the two otaten
(ZERO or ONE) are defined by the presence or absence of a high-frequency output
Y ~j-g
Do
Card
kg. 1. Tunnel diode memory cell iind
its phase-space diagram.
JY Word line, X - bit line.
UDC: 621,374.32:621.382.
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VUL, B. E.
"Dielectric panpeal)ility of Pt;!jjj.ujn Netals of Gr:;up II," a mport cub;-~Ittc-(~ nt,
Cencral Assemblle5 of OF*vjj ill lq)jj.
IAN-Ser riz.) Vol 9., No 3, 1945

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to bc frivarkbic WI!h tamp. 1*411
1. W. Petty
00
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$few $11,0JIVO ago- 43.1049 Noe
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U.S.S.R. 06.M, March 31, 194.1. An Invidatow for high
Irequewy is muie by bewing at IVIII-151W a "dxt. of -0*
Ti(h %m4
BxO arljrO taken i a t he m t in o( i lKqr no(. wts,
-
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00 .00
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*

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,
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IBM

VUL, B. I!, (Cor 1,.'br.)
"I'ligh-Frenuency Cerar-�c Condensers," a report sub,;Jluted at the Ge:-.ve.---j
of 0-2-,al in 1944
JANI-Ser Fiz, Vol 9, No 3, 1945

_0 ; wo;;e Goo*
11 U m "I It rim "Oflusio x a 21 a
a- R S,-L W--w It A-A -a -A-s --L. A- k A 4 -1-
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0o a D. 41. I'VI suil L. F. Veir%h.
WfUsiff. 00
N. Lcl)nkv ImIAhys" and Isol. thg.
Chem Aced. Scieners U.S.S.k.). rompl, rraj. deaj.
so 00
2 IM val-4wity (of a o"J"wr Witt& asium 11141"11, A.
go waa B%*A" avag tbe IntAbure fituto 44 .101 10
0o alusp. The ouess WatIvi chnow in raparily in
11114 fanse Is I Ac - 13 X 1W# 1k). 01I.At. WhCI# C It .00
AW so*
so 1E in U./ul. cm. sulum
go
so data prom that this subaAme is sef ttc*kc.
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00 t Dto*tdc coaslaal Cj Wunt tj%=k hoed=
2ft of an altornatfus fiew.. jJ,j4_vuI 4W 1. W
00 Llsbed" IDst. Of Physics. Acad. Sd.
U-S-S.R.). C*m#- FOW. Wild. sci. V.Rj.S. 49. Jr.

og .41(1943)(StAg" munmrY).-Tbe diclec. const. 1.) of
b4dum tkSbstS at I I I tOMP. WaXam front about IMP)
go to 8100 as the field suvogth Is incremm,"I to 7 kv./cm.,
the tnoamusetments bein at a frequency of NJ cyclim. At
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. # his in Initia
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W and aft;4 this temP. o so longer depends on the
applied vvitale- An 91"pt variation In sp. kmi was
0
foundatI25". CI.C-4.40.111-.r. W.J.).irkpatrick

66
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a 4.alb(Ple-my, (" nograph rwycia6f diefee. hymmis
al" It4litanair. flystm-4tois alment at a ternP, over MO.
Thi. waicatt-s structucal chau#" In the Ila litanate cry%.
0 ishas hrmittg. Data on the dirke. propertk-s. op. best.
an,t %-ray 41&ta itulicair that Ila titanstr 1.1cmills in a cla-s
with (mowlecirim A pkA a( the calwitancr u( a Ila 6.
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h
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, prrptl.
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(
:*nit. a - W. little dependent on the temp.). in grigntraso
00 it I to the comiml, magic Irons t"b, materiA16 (111 (e.g. from
DaC(h conig. 0.403% CAC(h). X-ray examn. zhowed I
and 11 to la, oructurally diffcrrnt, It having a fetragonal
lattice with a - a-us. gr - 4.04 A., I a lAttkv cloga, to
rhonshoW.ral a - b - gr - 4JH A., angle clow to IWW.
sk- of ?
A %wrn
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fo
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flosis
.
t wrm found to contain *ome rutile. Hvitknily.fis
go .3
~j 1. Ti ioni are deiggriv"I of the froodom of di4l4acements
4110V I within the 04on ortabedrom. Seignettoelec. P&TKh
Is caifly obtaineo. from I by adding to it about 270 AIA;
awls sampks had a tetragonal Lattke with a ~ 3.W4
11.01 and gr 4JYJ 0.01 A. N. Thoo

=41041
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Make,
i

Present-day state of th* physics of dielectrics. IlektrIchestvo
no.1:3-12 A 149. (nU 7:10)
1. lisichaskiy inatitut in. Ubadeva Akademil rAmik 8582. 2. Chlon-
korrespondent Akadenii nauk SUR.
(Dielectrics)

13. M.
USSR/Pbys1cs Tltanates PAY 50
Dielectrics
"Electrical Strength (KV/CM) of Titanates ol Metals
in the Second Group of the Periodic Table," B. H.
Vul, 1. M. Golldman, R. Ya. Razbash, Phys Inst imeni
Lebedev. Acad Sci USSR, 6 pp
ftZhur Ekbper I Teoret Fiz" Vol XX, No 5
Establiabee that electrical strengths 175 to 65 kv/cm..
respectively, of titanates of Bep Map Cap Zn, 5r) Cdi
Ba are relatively smaU %nd depend only slightly on
composition. "Reasuremen;-;s on BaTiO, lowest in elec-
tr,C&I $trengtbj-.shoV-ttAt significaut.varlations in
luence Its electri-
-dielectric perreability-ao not I
cal strength. Submitted 31 Dec
160W8

VTIL IV. 1-1
USSR/Electronics - Piezoelectricity Apr 53
"Application of Fi(;zi~~eltc trio Devices," it. ?I-jnrpki.7
"Radio, No 4, pp 23-25
General account of the use of piezoelectric devices as ultrasonic radiators,
as tremsducers for tho measurement of pressure, acceleration, and vibrations,
as the sensitive ele:%ent in quartz clocks, etc, A. V. Shubni:cov, V. M. Vu-11,
and V. F. Konstantinova are credit-ed with developing a thcoi-y of piezoelectricity.
FA 255T91

AID P 3031
Subject USSR/Electricity
Card 1/1 Pub. 27 18/33
Author Vul) B. M., Corr. Memb., Academy oJ.' Sciences, WSR
Title Physical grounds for the technical utilization of
semiconductors
Periodical : Blektrichestvo, 7, 102-107, JI :1955
Abstract : The author briefly reports on the principles of
operation of semiconductor rectifiers (diodes),
amplifiers (triodes), and also of thermo- and rhoto-
elements. He enumerates their advantages and possible
agplications. Two diagrams, 8 references (195-S-1955)
oviet) .
Instltutlon None
Submitted My 18, 1955

VvL18-M.
USSR/Physics - Semiconductors FD-2397
Card 1/1 Pub. 153-1/21
Author Vul, B. M.

Title Dielectric properties of the transitional layertikin semiconductors
Periodical Zhur. tekh. fiz. 25,, 3-10) Jan 1955
14
Abstract Transitional layers are created in sealconductord in connection with
sharp changes in the concentration of the admixtures (impuritins)
serving as sources of electrons or as their sinks (i.e. as donors or
acceptors). The role of transitional layers betveen two semiconduc-
tors vith different types of conductivities was theoretically',treated
for the first time by B. I. Davydov (ibid. 8, 1938), and experimentally
investigated by A. V. loffe (Ibid. 18, 1948); a detailed survet of the
modern theory of solid rectifiers and contact eemiconductors via given
by A. 1. Gubanov (ibid. 23, 1953). In most works the principal task
has been the clarification of the process of rectification and therefore
the effects of the joint action in the transitional layer of diffusion
and electrical conductivity have been considemd. In the present work
the author considers the capacity, resistance, and dielectric losses of
the transitional layer under the condition vhere the contact difference
of potentials Is much larger than kT/q (q: electron charge). 9 ref.'
Institution; --
Submitted, April 30, 1954

PHASE I BOOK EXPLOXTATION 947
Vul, B.M., Corresponding Ntmber, USSR Acadevy of Sciences
~egnetoelektrichestvo (Saignottoelectricity) Moscow, Izd-vo AN SSSR,
1956. 27 p. (Series: Akademlya nauk-SISSR. Nauchno-populye.rnaya
serlya) 7,,000 copies printed.
Reap. Ed.: VQnsovskiy, S.V., Corresponding Member, USSR Academy of
Sciences; Ed. or Publishing House; Dreyer, O.F.; Tech. Ed.-.
Makuni, Ye. V.
PURPOSE: The book may be useful to persons working with ferroe:;eotric
Imaterials.
COVERAGE: A discussion of ferroelectric (seignettoelectric) ma-;erials
is presented. Attention is given to a descriptJ.on of Carium titanate
and the application of ferroelectric materials '.n the constr-.xction
of electrical devices. No personalities are mentioned. There are
14 references, of which 10 are Soviet and 4 Eng:LIsh.
Card I/S

:Seignettoelectricity 947
TABLE OF CONTENTS:
Introduction
.Induced electric polarization
Spontaneous polarization'
The first ferroelectric (seignettoelectric) materials
Barium titanate
a. Method of production
b. Dielectric permeability
Barium titanate
,a. Dielectric hysteresis
d, Piezoeffect
e-0 Structural features and ferroelectric properties
'Card 2/ 3
3
5
7
9
11
11
12
11
15
21
U

.Soignettoeleotricity 947
New ferroeleotric materials 22
Introduction of ferroelectric materials to Industry 24
a. Miniature capacitors 24
b. Nonlinear capacitors 25
a. Piezoelements 26
d. Computer storage mechanisms menory" 27
Bibliography 29
AVAILABLE: Library of Congress (TK 453 v8)
JP/nah
card 3/3 12-10-58

df
meory FM
N. LcI edPv-
101 AIM, K
_--wool

cj,

v 114 -
Category CHM/Electricity - Semiconductors
Abe Jour Ref Zhur - Fizika., No 1~ 1957 two 1554
Author Vul, &M., Khuan K=I, Van, Sh'3u-u
Title Physical Fundamentals and.Technical Use of Semiconductors
Orig Pub Kesye tunbao) 1956) No 6, 2o-28
Abstract No abstract
G-3
Card 1/1

VUL, B. N.
WWMNK*
Crystals with a great future. Tokh.sol. 24 no-5:7-11 my 136.
(nu ( p: 8)
1. Chlon-korrespondent Akadentl nauk S M .
(Semiconductors)

V u, I I f,~' ri
C,Ategory ; USSR/Electricity - Dielectrics
Abs Jour : Ref Zhur - Fizika, No 2o 1957., xo 4147
Author ; Basdanov) S.V., Val., B.M., Razbash, R.Ya.
Title Influence of Pol-ar-Irz-a-t =on Con&itiona on the Piezo Propertien of
Barium Titanate
Orig Pub Zh. tekhn. fiziki, 1956, 26o No 5, 958-962
G-2
Abstract The effect of -the intensity of the polarizing electric field E anI
of the temperature T on the piezo-modulus d 33 of ceramic BaTiO was
investigated. 'It is 3hown., that the polariz&tion of thick spehm.-ns
can be produced at lower values of E and at higher values of T. 'Me
closer the polarization temperature is to the Curi e temperature,the
less the value of E required for the polarization.
To ortent'the fundamental part of the domains in the interval.:)f
the rapid growth of the spontaneous polarization (6 -- 70 below t:.2e
Curie point), E must not be less than 5 kv/cm for any values of T of
the polarization.
Card 1/1

SUBJECT USSR / PHYSICS CARD I / 21 PA - 1678
AUTHOR VULjBjM.
TITLE On-t =Meakdown of Transition Layera in Semiconductars.
PERIODICAL turn.techn.fis,26, faso.11, 2403-2416 (1956)
Issued: 12 / IT56
The principal forms of breakdown in electron-hole-transitions. The disruptive
voltage of germanium diodes at increased temperatures diminishes oonsiditrably
with increasing temperature. Therefore thermal ionization plays the mos'; Im-
portant part among the processes which promote breakdown. However, in the ease
of diodes of low resistance germanium, the disruptive voltages depend 1.-2 a wide
range of temperature only little on temperature and increase with risin;
tomperature. With these electrodes the increase of the number of electrons
mainly takes place in form of collision ionization. Thus it is possible to
distinguish between a thermal and a dielectric form of breakdown both in the
case of semiconductors and in that of dielectrion.. The diodes of germanium
with an increased specific resistance (orde:.- of magnitude 10 ohm.om) have a
smaller disruptive voltage for parallel current than for currenz pulses. By im-
proving heat transfer it is possible to ino;:eaes disruptive voltage. Hcwever,
the dependence of disruptive voltages on tenperature and on the conditions of
heat transfor is not so marked in the case of these diodes as in the ci.se of
purely thermal breakdown. It may be that breakdown is brought about by the
simultaneous effect of thermal- and collision ionization ("thermoelectric
breakdown").

_hrn.techn.fisj26jfasc.11, 2403-2416 (1956) CARD 2 / 2 ?1 - 1678
Thermal breakdown! At first the bases of the elementary theory are recalled to
memory after which they are augmented by taking the following additional factors
into account: Influence exercised by the resistance R which is independet.t of
temperature; influence of additional amperage which is independent of voltagel
influence of additional losses which are independent of counter-voltagel in-
fluence exerolsed by the heat conductivity of the crystal.
Electric breakdown: was found to occur in pure form in the case of parallel
voltage only with diodes of low-resistance germanium, but in the case of pulse-
like tests it was found in germanium of any resistance. Electric breakdovm is
caused on the occasion of eleotron-hole transitions as well as in gases by
collision ionization. The computation of the conditions of breakdown is
sketched out.
Thermoelectric breakdown: Already before thermal breakdown is about to (occur
it is possible that the amperage increases considerably because of ionizution
if.field strengths in the electron-hole-transition are high. This Increaties
heating of the diode and thus also thermal ionization in it. The electrons
liberated by -thermal ionization participate in collision lonizationy and, if
intensity is sufficient, the common effect exercised by thermal- and col:.iobn
ionization may lead to the destruction of -the state of equilibrium, and to
breakdown.
INSTITUTION: Moscow Physical Institute of the Academy of Pcience.

7 5 PA I I MR imml i Of I offir-MARR mm. i

INN 1--fiR -!~7
WE
J11
lip
-s iw- t, 'ie, a~ - -x% ~,x r
iq-,~ cmv 4 6 0, .4,
gn'Affirr"Him- INUMA ram" MEOW

AUTHOR VUL
B - M YAYILOY, y. S. , SMIR)JOYj L. S
jc4
GALKINa.N.9 PATSKZYICH.T.M.;
SPITSYNA.Y.
TITLE On the transformation of the eperg;r of P-partioles into
electric energy in germanium cryntaln with P-N trajtsit.~cns.
(0 pxoobra2ovanii onergii P-ohastits i eleotroonergI.Tu Y
kristallakh germaniya a P-N-perek1~0dm.1,- Ruscian)
PERIODICAL Atomnaya Etergiya 1957P Tol 2, Nr 6, PP 533-537 (U3SR)-
ABSTRACT I.D. 1955 th" authors carried out experiments in the deteir-
mination of the dogroe of arfioiency of the tranaforma"'llon
mentioned in the title. The NN transitions were obtain9i
by the malting of inditjc3. Sr90 - Y90 preparations servad as
sources of P-particles. The total aotiylty of the primary
radioactive preparations amounted to 500009 and d'!00 iallli-
curies. An source of 0--particles ntrontium aulphate tablets
with 50 and 100 millicurie and sironlium ourbouato tablets
with 200 millicurie were u1sed. A diagram shows thit 0-speotra
of these sourcos. Also measurements during irradiation of
a semieonauotcr with artificially accelerated ele-,tror.s (400
to 1150 keT) were carried ou-5. The degree of efficiency
CARD 113
CARD'-2/3-

0. the transformati .On Of the energy of p-partioles
into eleotric energy in gerwLnium cryistals with P-1 transi-
tions.
the degree of efficioacy of -the transformer dial"okes.
Further detaile are mentiolled.
(With 8 Illustration@).
A330CIATIONt not given.
PRUSM D BY: -
SUBMITM: 18.16 1957-
ATAIUDLE: Library of CoWess..
CaD 3/3
~
gfe/Eiectricit X~'
% 5F
e/jglectricit 7anovl,
A s Jour 9
Abs jour Ref Mur 1r'z'ka, NO 1, 1958,, 1290
Author
Au~hor
Bog"nov, S_V.,
I---
Inst Ph;fs'cs Institute, Acad .eny Of Sciences, USSR, M06COW
Title
Connection Betveen the, Dielectric~ Piezoelectric, . and
Elftstic Properties of polycrysta
H0110crystals. lline Ceramics and
Orig Pub Izv- AN SSSA, ser. fiz-, 1957, 21, NO 3, 374-3'18
Abstract A general method ii
9-PrOPosed for calilulating the tensors
Of the. dielectric ronstant, the
ti C P'ez(modllli., and the elas
diu 'stants of 13flycryst"11"e meteriais ~Prom correepon
g characteristics of the initi
thod baAed on averaging the equat al mnOcyrfjt&j,9, a M.
ione of th,_m
converter, which is a generalization of t PlezOelectric
Vul (yestn. info he work by B.M.
rmats" BNT MV, 1951, 3, 15), Meya.
Card 1/3
-+.A'n+ nf -+ho- ni%rimin rnrM are

USSM/Electricity - Dielectrics G-2
Abs Jour Ref Zhur - Fizika, Ito 1, 1958, 1290
constants, while at a = 550 such anisotropy should be
experimentally observed. By comparison with experimen-
tal results, the authors conclude that the chanGe in the
direction of the polar axis of the single crystals upon
polarization is essentially at an angle of 1800.
Card

116n./BlectriVi-~y e gc-~ ic s
G-2
Abe Jour .: Ref Zhur - Fizika, No 1, 1958, 1277
Author Vul, - B.M.
Inst Phystcs Institute, Academy of Sciences, USSR
,Title
NoW."near Properties of Ferroelectrics
Orig Pub IZV Alt SBBR- serf Xo 31-379-j&
1957 21
Abstract The nonlinear properties of ferro-ceramics above the
Curie point can be characterized quantitatively by the
.value of the coefficient (/3 ) of 0, vhich represents
the field intensity E in the form of' a power series in
the polarization P. The value of this coefficient can
be obtained from measuring the equivalent or reversive
dielectric constant ( F, ). Changes of the equivalent
vere made with a Schering bridge at 50 cycles for
different temperatures. They have chown that (3 depends
Card 1/2

SUBJECT
.,,AUTHOR
'TITLE
PMODICA1
'USSR / PHYSICS CARD 1 / 2 PA - 1944
VUL,B.M., SOTOV,A.P.
TTFe--_9Murfaoe Discharges on Electron-Hole Transitions.
turn.techa. fis.27,fase.1,211-214^ (1957)
Issued: 2 / 1957
On the boundary of the electron-hole transition on the surface of the semi-
ionductor breakdown is complicated by a boundary effect, The surroundi:ig medium
iv atle to limit breakdown voltage considerably if on the surface of tae diodc
"overlapping" (i.e. a surface discharge at a voltage that in lower than the
breakdown voltage of the eleotron-hole transition in the interior of the semi-
conductor) occurs. In the case of constructions encountered in practice the
electron-hole transition is located in a gaseoutj medium at atmospheric - or
lower - pressure. For gaseous media there exists a minimum breakdown voltage be-
low which no electric breakdown can occur in this gas. For air the mirimum
breakdown voltare amounts to Umin - 330 V and to this belongs also thc value
pd - 6, Here p denotes the pressure in mm to and d - the distance btitween the
elect7rodes in =. In the case of diodes in Mah the breakdown voltagot of the
electron-hole transition in the interior of the sample is less than Unin' over-
lappiLg can therefore not occur at all gas pressures. On the other hand, over-
lapping can prevent total utilization of the possibilities of the dio4e in the
case of diodes in which the breakdown voltage of the electron-hole transition
is more than Umin'

Aryi. teohn. f ls..U, f aso. 1, 211-212 (1957) CARD 2 / 2 PA - 1944
The measurements carried out by the authors showod that what has Just been said
is true. In the case of diodes with a breakdown voltage of less than 300 - 400
MeV this breakdown voltage remains constant at any air pressure. Ueasurements
were carried out on diodes which were not mounted in cartridges, and a~.so in
such diodes into the cartridges of which holes had been bared.
In diodes with an average breakdown voltage of 400 116V at normal pressure a our-
face discharge occurs at diminished air pressure approximately at thoso values
of pd which correspond to the voltage U min' In the case of a further docrease
of air pressure the surface discharges cease. Frequently the propertieti of the
diode are. deteriorated considerably by the surface discharges. On the occasion
of the piactical construction,of high-voltage diodes it i~ obvicusly nocessaryp
when selecting the medium surrounding the electron-hole transition, to take
care that overlapp!ng voltage is greater than the breakdown voltage of the
electron-hole trantition in the interior of the semiconductor.
The above is a translation of this short report.
INSTITUTION: Physical Institute "P.H.LEBEDEV" of the Academy of Scienef. in
the USSR

AUTHORS: Vuly Be, Me) and Shotov., A. P. 57-lo-a/33
TITLE: On the Edge Breakdown of p-n Junctions in Germanium (0 krayevom
proboye-p-n-perekhodov v germanii).
PERIODICAL: Zhurnal, Telchn. Fiz..) 1957, Vol. 27, Nr lo) pp. 2189-2194 (USSR).
ABSTRACT: The breakdown potentials of diffu3ion:junctiom (traraLition) and
+ aw + 40 -
melted-in. V-m and a p junctiona were measured in air arxi In media
wit1t an increased dielectric constant. It is shown, that the dielecok
tric constant has a marked influence on the breakdown potpvntials of
the P.+nM junc~ione and that it plays an important r1ohe in the break-
down of the p ir- and of the diffusion junctiow, The observed phenon
mena can be explained with the assumption., that the surface of the
germanium carries a positive charge and that the medium determines
the effectiveness of the surface charge.
There are 5 figures, I table and 3 Slavie references.
ASSOCIATION: Physical Institute imeni, P. N. Lebedev AN of the USSR,# Moscow
(Fiticheakiy institut imeni P. N. Labedeva AN SSSR, Koala-a).

VUL, B. M.,
"Multiplication of Electrons and 11olen in p-n Junctle-na,"
paper submitted at the International Conference on Solid State Phycics
in Electronics and Telec,:)mmunications - Brussels, Belgium, 2-7 June 1958.
Physical Institute of the Academy of Sciences, Moscow.

f I 'ifl: pq
fl'. r0
SO
J. ~
*
.0 r. I *'
iss !:4-. '!Q
JIM .1~ Ii. Its-.3
Ila
t H rul
i- C310ig.; jig,
Z!s
ji -3 j - : i
1U.1
I *
I
".. .4: 11
qt-
-
pl.;N-1~u*
'I Rainjub SIR*

ATITHORS i Vu I P.
,TITIX. On t h,: Th-~ !:,-,I t~ T::-ann i ti on -3 f n Sr-,,-- c ond-, c t c-2-
(K ~,,erekhodwr v
PERIODICAL: ZInrnn! Tcl-,hr.-Jvhezk,-jj Pv-iki, 1958~ Vol, 26., lir 4, Pl;,
(USSIIJ
ABSTRAM! peferewe 1110.d-2 here to The formula sh u -
dx7
by VI. Slio~Aln,,,r Ref. Thi-,i ompi,ozin-ate equation is herb
ve~-Aigated undcr '.-he following a3smiptiQn: In~;tead of ;he
boundary cawi lrudl;~!l b~- Sho~7kley, where the spact- charg,:-
cn2y produced tA tM expengn of ion'zed admi~-turen, it if, C-SM
s~~d here that ah u - u, i.-). that the equation (I.'.) is
gat(ld i.11 thp f(:r.',) of
,p4 .? --,nan-n --f th~~ lo-unlarv nditi n -iat
-1j, tl"&-~ t~ in Mae-, ca:je nf Y. -cotli!-, lirrAted. Thi -f
0.4) k".3) Ille llf~jm (if (4-3) i2
Oow 4L~, ic; 111"der olhil-.r -orditionn Ow solufAsti (A.,,:
Card cait approxin:ate'j- -e!AL~c- tlic, -i-lul.-I-n 0.1) wid.-n-k

On tile Theory of' Transitionu i-ri 2C,
,onditior. lo sh:)wn n' thj,-t 4,3 ths rase in 0-
of - ml A a nondiriemaI'or,-il 1,,:)s-i A--
't Z,nt I is S-ufficien~-,y amall. Ori that o-:cas-Jon, (.,i dinon,--ii-
o ~~i t r: or 3 1: ;,.n~ ) ca-i 1-:3 of value. Ili t:l~- f.
L I r-r-,.cen'~xat icr, )f the vd:-.iixture~~ the -o-i
.r., i ,7 r ma i r. i.-1 in 1;he -q5~ of -Iry Tbv-
~11 -
f -;~~ -- r \ ~j L ri 'd 0 -,1 a t r i --: evarywhere a
i -~ n
for eq, h,) nodern semicondu-
for the
of th,~ 1 .!n(,-rL,, 4.1)PTO -~!Vtt~icr vwhi h 4n the IiL.,ited -.n!.%,~:
spo,:! w f A> t~xrmi-icd for thin domt.-.11
IY r, > 7 . I, . Vh -
e:juations' t- thf~ (7.") for the second
a re o ~C, a j nc, I. F om 4,1 he c ~a f I I at t 'tie y -- (6.1) or
sccorrllng, m 0 0 r V I' go cri.terim for the
ne:3a of tbq line!;:- a p r, r,~; i m n t i c r, (4 7) no Lead of the cca
Solution w-LtI.- thc !L!i ini: ?~-Ond i t'. orks 3) i r. 1-1.e (11 ~.i s
o f 0 refer,~rlrr-, 0 of, .711!17t
Card 2

21(0),24(0) PHASE .1 BOOK Erpto-MAIN01
kkademlys. n&u;c rizichaskly Institut
Issladavanlya po *kjperlz*ntal1noy t tworatleneskoy fizik*; (abornl.;;
(Studies on Experimental and Theoretical Mysics; Collection or
Articles) Moscow. 1--d-vo P-4 SSSR, 1959- 304 P- Errata AlIP
Inserted. 2.300 copies printed.
Zd.z 1. L. Fabeltmicly, Doctor of Physical and Xazbexatlcal Sol-
encos; gds. of PublLshing H.uso. A. L. Chernyak and V. 0. 5orkasut.,
Tech, Zd*1 Yu. V. Rylina. Commisslon for PublIsning the Collection
In Memory of arigoriya. Samutlovich T-nd.%b*rg: 1. Yo. Tun
(Chairman), Acadeoaci&n; M. A. :ant*vich. Academician;
P. A. Bazhulin, D"tor of Physical and KathamatICLI Sete.-Ices.
S. L. Kandel'shtam, Doctor or "Leal and Mat-ftezatLeal 3cjon,:*~.
1. L. Pabelinak-ly. Doctor or Physical And Katataltical 3ci*nces;
F. 3. Landsbers-BaryahanskAya. Candidate or PUY31cal and Math-
"attest. Sclenc4s; and 0. P. Motul*wlch (Se-rotary), C-undidate or
"teal and Xa%hematlcal Sciences.
PURPOSts This book Is Intended for physicists and researchers
engaged In the study or electromagnetic rAdlat .1ons and their role
an,d-cp-ositLoFj or materials.
COVWUM: The collection cont'Ins 30 articles
lAV0~tI9*tIOnS In SPOC-rOSCOPYs &onto&, malocular optics, seat.
conductor physics. nuclear physics. and other branches of
Physics. The introductory chapter gives a blogr&;a1col prottle
of 0. S. Land.brg, Professor and Road of the Departm*nt or
Optics of the Division of Physical Toct:nalo&7 al Pt*=ow Unt-
Varsity. and reviews his work I*% Nzylsl.-~% sca"Ic.-Ing, combat
games, spectral analysis or metals, ate. Uo personalities am
mentioned. Rerarencla accompaiq each artic1p.
Bazhulln. P. A., Y.- T- 141173h*v. and
-
-
Work of 0. S. I andsberg
the Pis' d
IM

.842�- -[..and A X. Mo-1 I
lgatlon of rrana-
-
-
--r
m i
;X
*xt
a
Mation
casses
n an
ActIlAtod DI-,
g& Conarator Opera-
ting Under Conditions or Low Are Currents 27
Alsksan KPh Yo Ku.-net-
A~

and B. A

a
MMI
nd B. A. zanoicly. Es ftii Vy
17
1
0
nrtguiifron 0!
-stersolsomeric DIAlkyl.
1
cyclohexam an the Basis of a Combined Scattering Spectrum k3
Andrejov, N. Standing Sound Waves of Large Amplitude 53
Pashulln F A-,".&.. T- qn1ealclakaza.- xnvestigstlon or the
r Lo
wwto
f c
a
o
omolnoa :,cAtt*rlrg L.Ims to Tea_
Persture 56
Butare'a. P- A
t,... aw&nalp-~IkUt- A Radium With Negative
osor
rr ci
t
en
p
62
nuclear Tt~naltiooa in xOnspharle&I Nuclei r1
Optical Properties or Substances In the
so
B. pt. V. S. V*vll", and A. P. 3hbtdv. The Question or
95
-f JF*v thod. .' Increasing the zrfo%tlvtmso
400
GIZIburs. V. L..Rnd A. P.
_Z4VjLnjuk, Scattering or Lt,,t Near
-
ftldti
dr-rhaso Tvinslilon of the Secono Type and the
Critical Curls Point
10%

;--
-
M. A. Irradiation of an SlAstle Wall Vlbm&lg
1;h
-
ko-
~
ft
t
ha
Action Of' StAtIstIcAllY DistrIbuted Forces lIT
vzoming or Light by a cloud 121
L, &-
,_
-
g. The
_
and
1~nfltl,g Or the p. trj-Ljjjii,-6-f-a--4A,
c
in PlAmas 128
1,,Snd V. 0. -Piurl1p. Investigation of the Nydro-
6 P60 4-1
e
"
"
.
a
b"
t
as
Oss MQI*cul*s Contain Two Hydroxyl
C
rogpo 134

VAVILOV, V.S.; VUL, B.M.; GAMIN, G.N.; FRIDUW, SoA*
Performance of watomieN sources of aurrent with double transfoi-
mation of enerMro Fiz.tvertela 1 no*5:826-827 MY 159o
(mrRA 1.2:4)
1. Fisicheakly institut im. P.N. Lebadava,
(Semiconductors)
0

6 U) SOV/105-59-10-4/25
Zherebtsova# A. L., Yuditakiy, So B#
'AUTHORS-. Bagayevp Ve Sol V311L Be
TITLEs Invostigation of Large Germanium Rectifiers
PERIODICALt Elaktrichostvog 19599 Hr 10t pp 21o,26 (USSR)
ABSTRACT: Thin article presents the results of an invobtigation of large
german..um rectifiers of the VG type which were made by the
Vseoo7uznyy elektrotekhnicheskiy Institut 1mo Lenina (ALI-Union
Electrotechnical Institute imeni Lenin)(Ref 1), Figure I shows
the-section of a.VG-10 rectifier. The '~.xpendence of the rectified
cu..rrents -upon voltage- and_~tim_perature` -% iLs dete rined ata
-temperature maintained consfant' by means of a thermostat. The
saturation current was determined by measuring the direct and
backward current at voltages of
H
U_2__ and accord.ing to the
q
backward branch of the static characteristics (Ref 4)- 11 denotes
the voltage in the p-n transition of the rectifiert T the absolute
temperature, k the Boltzmann constant, and q the elemenlary
charge. The backward branch of the static characteristios was
Card 113 ~plotted at two values of heat emission. The investie:ation yielded
n3y reason

c. c -~loa ti r, of Large Germanium Rectifiers SOY/105-59-10-4/25
tlhc; followine results: (1) 7-7,hc rectified current I exhibits a
d
SUMCiOntly large 3ect-.**(;Il on the etatic characteristics for
which formula (1) holds. The deviations from this formula
occurring at increased current densities result from the occurrence
of the electron component of -the rectified. curronto Nhich in turn
to an additional 7oltabre drop and additional !)sees, The
temperature coefficient of the rectified current in the experi-
rients is in good agreement with that of calculations. It is
about Xfo for the group of rectifiers under discussion. ~2) The
saturation current calculated according to the formuLa kBee
Table 3) is somewhat higher than those obtained by e:cperimert.
(3) The differential capacity of p-n transitions of the
inv-stigated rectifiers is inversely proportional to the sqiLire
root of the voltage applied. this indicates the 3rad-lal characte:7
of the p-n transitions. (4) The backward currents inorease mcnoto-
nously with increasing backward voltage. (5) The pulaed breakdown
voltages of the individual rectifiers approximately agree with
those to be expected from the specific resistance of germaniu;n
foils. F,-rmula (11) yields excessively high breakdown voltages
If the h6sting of the rectifier is assumed to be the only zeaeon
Card 2/3

Investigation of Large Germanium Rectifiers SOV/105-59-10,-4/25
for the increase in the backward current. Formula (13) hl)lds
for the overheating of the diode when breakdown occurs, which
approximately agrees with the experimental results. Thero are
7 figures, 6 tables, and 7 references, 4 of which are Soviet,
SUBMITTIE'D: May 11, 1959
Card 3/3

240)
A Popov, YU. M. SOY/5o-37 -!-4/56
UTHORS; Basovp lit Gov Vzjjj_PA_!U. -2
TITLE: Quantum-mochanical Somicondlaotor Generators and -Amplif:;ers ol'
,Electromagnetic Oscillations
PERIODICAL% Zhurnal ekeperimantallnoy i teoreticheakoy fiziki, 1959,
1101 37, Nr 2(8), PP 587-568 OWL;/
ABSTRACT: In the present "Letter to the Editor" the authorn discuss the
possibility of using the electron transitiona between the
conductivity zone (valence zone) and donor (acceptor) impurity
levels of a semiconductor for thfi production of elco trcmaj-no tic
radiation (like in a molecular gonerator), For thn. rcrQizatioji c."
semiconductor generators and -amplifiers if, io to
prc~vide for such a distribution of electrons (1101es) in the
Corductivity zone (valenoe zona) thn6t Wa effoctivr- tenperature
of the conductivity(electrons (holon) lo iweative -,ith, respoot to
the ionized donors acceptors). Such a cerdr;onductor has na0atIve
frequency losses in the ca 'se of transitions of electro;a3 (holes)
from the conductivity (valence) zone to Impurity lnvel~. if cuch
a semiconductor is irradiated with eleotromagn-?Uc var,39, the
Card 1/3 latter may be amplified; if certain conditions fself-e:xcitation)

Quantum-meohanical Semiconductor Generators and SOV/56_~7-2-54/5$5:
-Amplifiers of Electromagnetic Oscillations
are satisfied, such a device may work as generator. In order to
attain negative temperaturest a apecir-.1 impurity ionization
machnniam is sugGeated. This stato with negative temperature is
maintainod during the relaxation timo of elf-,otrons (hra,,B) viti,
the impurity levels. If the numbex of impurities iti (wall
compared to the number of atoms in the crystal lattico, the
life time of the conductivity elootrons (holes of tho w.lero~3
zone) T2 is large compared to the time botween the
collisions of electrons (holes) with the lattice. 'L ma-y be
2
Z
regulated by the impurity concentration. During the peTf.cod 2
the system may be used as a generator or as amplifier a:'
electromagnetic -5saillations. A reduction of the su:,fac!)
Card 2/3

Quantum-mochanical Semiconductor Gowrators and sov/56-37-2..54/56
-Amplifiers of Electromagnetic oscillations
ro,'lection coefficient vr of the dimensions of the sample may
convert the systum from tho function an generator to that of an
airkplifier. The present paper wan registered by the Committee '
of Inventions and DiacoVeries of the LN',SR Council-
of Ministers with priority of July 7P 1958,
:The-.o are 3 Soviet references.
ASjOCIATION: FizichOl3kiy institut im. P, N, Lebedova. Akademii nauk
(1,hySics Institute imeni P. 11, Lebedev of the A-eademy of
Scienoes)
SUBMITTED: 'day 18, 1959
Card 3,13

66470
240), 9(34 SOY/ 20-129-1-16/64
AUTHORt Vul, 3. M., Corresponding Member, A3 USSR
TITLE: On p n Transitions at Low Temperatures
PERIODICALt Doklady Akademii nauk SSSR, 1959, Vol 129, 111- 1,
pp 61 - 63 (USSR)
ABSTRACTs At sufficiently low temperatures, the concentration of thi!
electrons in the conduction zone and the concentration of the
holes in the valence zone becomes very small iii comparison to
the concentration of the admixture, assuming, i. hat Wi~( kT
holds fox, the ionisation energy of the admixturl0i in the
semiconductor (k - Boltzmann constant, T . absoiute tempe:,-
aturelt. At low temperatures the effect of the eloctrons and
holes on the flormi%tion of spaoe charge of the p 4 n transition
may be neglected. In this case the following equa tion for
the potential distribution in a step-like p - n-t~..aneitio~i
in dimensionless quantities is obtained for the ohdimens:ional
problem with lacking degenerations
d2 ')d
"LAL.- if 0
Card 1/4 d5 1+e -a+%y 1+e_(~

66470
On p*~- n Transitions at Low Temperatures SOV/20-129-1-16/61,",
d2 %)d qa if 0. The units are
2 fl +Y
d 1+e 11 + c
defined. as followss Unit of potential kT/q, unit of len~gth
Debye length, unit of concentrations 'od , and Va (Id* an~ %~' )
a
of the donors, and the acceptors respectively in an electronkc
semiconductor (hole-semiconductor) -intrinsic concentration of
the electrons n i' S denotes the dielectric constant, q the unit
charge. Furthermore it Iholds that (g-Z,'I,)/2kT (g = wid-;h
of the forbidden zone of energies) and Wi is assumed to be
equal for both donors and acceptors. The first terms of tho
above described two equations correspond to the ionized do:iors.
and tho second terms to the ionized acceptors. These terms
depend on the distribution of -,,he potential in the present case.
It was founds
-Vd -VEL a ( e'?d' - e - IV jHere it holds that a-e-3 ani t~d
Va 1+ae- kU I..
Card 214 denotes the value of the pctential Y for ~--)oo. In germani'Am,

66476
On p n Transitions at Low Temperatures SOV/20-129-1-16/64
Wd - ~- for ~-*Co ' ~a - -~ for a)' Yd -1a - 2P , ig
valid with great accuracy. The solution of the first of the
above-mentioned two equations runs as followi;
A W .[!a - 2 % "4' f 2%) ln(e-At ey 1/2. By tak,r1fr
d5 1+eW -ilb a I , :.nto
account the condition dq,) 4/d~ - 0 for ~--),oo it is found thitt
d 2 1/2 '~d~ - %~ dy ln(e-kelv g12 1/2
d L
+
In similar way one gets
d I
=[2,)a(~+Yj)/' forS~0. After some steps of computationt
d+
is obt,i,ed. Therefore the compLete
5)2
potential difference belongs practically to the range .0
for and the width of the, p - n transitions extends from
a
0 to that value S-'~ for which y For the potential
Card 3/4 difference at the transition, caase-d by diffusion,

66470
SOVI'20-129-1-16164
On P - n Transitions at Low Temperatures
Vd. (g-2Wi)/q"Jg/q. For g measured in ev U d in V is numerioally
equal to the forbidden zone of energies. The width of -the
p - n transition amounts to
h.(g-Z.Vj) 1/2E1/2 /q(2nN d) 112 in the absence of external voltage.
At low temperatures most of the admixtures are almost completely
ionized in the zone of the p - n transition. The results of
the present paper were confirmed by investigations of the capa-
city of p - n transitions at low temperatures. There are 4
Soviet references.
ASSOCIATIONs Fizicheskiy institut im. P. N. Lebedeva Akademii nauk SSSR
(Institute of Physics imeni P. 11. Lebedev of the Academy of
Sciences, USSR)
SUBMITTLD t August 1, 1959
Card 4/4

VUL) B.M. and VAVILOV, V.:3).
1, The Capacitance of p-n Junctions at low (helium) Temperatures."
report submitted to the MIT Physical Electronics Conference, 24-26 March 1960.

VUL, B.M. and VVILOV, V.S.
'Tffect of Strong Electric Field on the Absorption Edge in
Silicon and on the Recombination Properties of Structure
Defects In Silicon."
report nubmitted to the MIT ibysical. Electronics Com.'erence, 2h-26 March 1960.

-TV
Z~
w "r, pi
rs-. -A =5 6
Ua
4,
g 2 .1 - r,
F Y
Ut F". f I
D VIA. 2 Va
a 05 1 5 ~o Ir
ry
i E s
et
c 21 r

86450
.3 0 (4 /so /0 B/181/60/002/011/040/C42
B0o6/BO6O
AUTHORr
TITLEt Impact Ionization and Tunnel Effeot in Seniconductors
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. i'l, pp. 2961-2967
TEXT3 The present paper offers a discussion, based on -theory, of the
impact ionization in p-n junctions, of low-temperature breakdown, and of
the tunnel effect in p-n junctions. The first publications in this filild
are by A. F. Ioffe. It is pointed out that the elementary theory of
impact ionization in semiconductors is in a certain way simpler than In
gases, this being chiefly due to the fact that in gases the two partnqrs
concerned - electrons and Ions - have a very different mobility, wheraas
it is-practically,tho same in jemiconductors lectrons and holes). Oa the
basis of the.Towns-end theory, thecondition ~a dx In 3r/(k-l).const must
be satisfied for the breakdown of a p-n juncticn; k- PP,; d- coefficient
of impaot ionization of an electron,' that cf a hole. The maximum
electric field strength E max at the junction it. equal to 2u/h, where u is
Card 1/43

86450
Impact Ionization and Tunnel Effect S118116010021011104rlO42
in Semiconductors B006/BO60
tho volta.go at the junotion and h the thickness of the junction layer. The
d,-valuea obtained theoretically and oxporimonta'. ly are intercompared An
tables for different E-values. The following wai obtained for germanit.1-1
-25 5.5 _1 -25 5.5 _*1
C6- 10 E cm , and 2.10 E cm , while for silicon o(
1-4-10- 22 E4-7cm-, 1, and 0- 0.31 _10-22E4.7 cm- 1. Hence the dependenco of
mpact ionization on tho field strength is more strongly marked in ge:~-
7
manium than in silicon. Lt temperatures naar tte absolute zero point,
impact ionization may be also observed in homoi-eneous semiconductors. If
the most favorable conditions for impact lOnIZE.tiOn are provided in, say,
germanium, i.e., low ionization -energy (which is only about 10-2 ev for
impurities of the 3rd and the 5+~b group In Ge) and a large mean free path
an impact ionization may be brought aboui alrendy at exatedingly low
field strengths (some v/cm in Ge)j The current density as a function of
E for homogeneous p-type germanium is shown in Fig. 2, based on data by
Zavaritskaya. The curve shows that Impac-; ionization appears at about;
5 v/cm, while at 20 v/cm the impurities tire practically ionized com-
pletely. The ionization of impurities to-A place solely by holes at ;his
low-temperature breakdown (in n-type, antlogously, by eledtrons only).
Card 2A)

e6450
Impact loniiation'and Tunnel Effeci 5/181/60/002/011/040/042
&in Semiconductors Boo6/Bo6o
.,The'possibility is finally discussed of oxplaining the 1'reakdon of n
~,p-n.junction by the tunnel effect. The.position of the Fermi'levaln and the
characteristics.of an Esaki diode are diocussel in great detail. Fig. 3
.,shows the, position of the Fermi 1eve13 for a p-~n junction in a degenorate
:,.semiconductor with thermul equilibrium (i), a maximum direct current (b~,
and:A, minimum direct current (c). Fia. 4 illustrateo the-dependence ..,f the
urre.nt.on the voltage at a tunnel diode or the basis of data by A.P.
-'...Shotov.- II.. Ivanchik calculated ~ p-n jundtion in a. degenerate sem i-
.-conditctor. L..'V. Madysh and V. A. Chuyeakov are mentioned. There are 4
figutes, 3 tables,-and 11 referehces: 8 Soviet, 1 British, and 2 US.
,ASSOCIATION: Fizicheskiy in3titut im. P. 11. Iebedeva All SSSR l,,oskva-
'~nstitute of Physics imeni P. N. Lebedev AS-USSR, Moscow)
'SUBMITM 196o
August,4
-Pe branch, nH"-WA+Y_
-Ila LOM
_e1e4;419414 4.3
C
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7

VUL, B.Ma; ZAVARITSKAYA, E.I.
Capacitance of p - n junctions at Iou temperatures. Zhur. ekDp. i
teor. fiz. 38 no-1:10-17 Jan 160. (KM 14:9)
(Materials at low temperatures) (junction transistors)

5/053/60/C71/004/0(14/004
B004/B056
AUTHORS: Vul, B. M.p Konorova, Ye. A.p Demeehina,'A. 1.
TITLE: iGeor-9 =Yvanovich Skanavi (:)ecessod)
PERIODICAL: Uspekhi fi,-,icheskikh nauk, 11,160, Vol - 71, N0. 4,
pp. 681 - 665
TEXT: On November 11v 1959 G- 1. Skanavi,, a prominent Soviet rese&rch
scientist in the field of dielectrics died. He was Head of the
laboratoriya fiziki dielektrikov Fiziches):ogo instituta Im. P, N.
Lebedeva AN SSSR (Laboratorv of Physics of Dielectrictj of the Institute
of Physics imeni P. N. Lebedev of the AS USSR) and Profascor 6f the
moskovs"iiy-.i~o's-u-d-'ar's--t-'ve-nn-'y'y-'universitet im. Lomonosova (Moscow state
University imeni Lomonosov). Skanavi finiched his studies at the
Leningradskiy politexnnicheakiy institut (Leningrad Polytechnic Insti-
tute)in 1931, and began working at the pIE!.nt "Blektrosila", where he
had already given Proof of his abilities of a research worker in the
works laboratory. In 1935 he entered the Fauchno-issledovateltskiy
institut.radiopromyshlennosti (Scientific Research Institute of the
Card 113

Georgiy Ivanovich Skanavi (Deceased) S/053
,/60/071/004/00,1/r,04
B004/BO56
Radio Industry), and in 1940 he began his activities at the Ins-:itute of
Physics imeni B. It. Lebodev of the AS USSR, first in the capaci-*y of
senior scientific worker$ and later as deputy of the Head of tho elektro-
fizicheskaya laboratoriya (Electrophysical Laboratory), and sinae 1954
as Head of the Laboratory of the Physics of Dielectrics, which ')ecame
the leading laboratory in this field of the Soviet Union. The first
works.(1931--1935) of the deceased dealt with the high-voltage insula-
tion of electrical machines. His method of removing the corona, and
his method of testing insulation were used in industry. 5kanavi became
Candidate of Physical and Mathematical Sciences in 1937. Many o:r hie
works dealt with the dielectric losses and with polarization in glasses.
Skanavi drafted the theory of relaxative losses, and discovered the
neutralization- and crystallization effect of loss reduction. Diring the
war he investigated polycrystalline dielectrics at the Institut-? of
Physica, produced new dielectrics with a high dielectric constai%t, and
developed a theory, which explains the high dielectric constant of
crystals. It was upon these works that the Doctorls diesertatio!l de-
fended by him in 1946 was based. For the industrial production )f
ceramic capacitors developed by him, he was awarded the Stalin '?rize
Card 2/3

Georgiy Ivanovich Skanari (Deceased) S/053/60/071/004/004/004
B004/BO56
in 1952. In recent yeaTs Skanavip assisted by the collaborators of his
laboratory, produced dielectrics with a particularly high dieleotric
constant: the strontium-bismuth-titanates. In 1956 the first strontium-
titanate single crystals were obtained at his laboratory. During the
investigation of the electric strength of dielectrics the photononduc-
tivity of KBr crystals stimulated by high voltage pulses was diiscovered
Further, Skanavi delivered the glass substances known as 11pyrociaram"
with finely disperse crystalline phase and a new class of e Ist.-tets.
Besides his sclentific activities, Skanavi was for several year,3 the
Head of the works laboratory of a radiotechnical factory in Moszow. He
published more than 70 ecientific works, among them the monograph
"Pizika dielektrikov" in two volumes. For several years Skanavi was the
scientific secret&ry of the Institute of Physics, and Member of the
Byuro otdeleniya fizikQ-matematicheakikh nauk AN SSSR (Bureau of the
Branch of Physical and Mathematical Sciences of the AS USSR). Since
1944 Skanavi has been Member of the Cowmunist Party of the Soviet Union,
and since recently also Secretary of the Party Committee of the In-
stitute of Physics. There are 1 figure ar.,d 55 Soviet references.
Card 3/3

87397
f13 0 0 (3 %031 3) S/020/60/135/006/012/0.;--
4 1100 2401, 1055*1 115-s- B019/B056
AUTHORS; Corresponding Member AS USSR, Zavaritukayi., E. I.,
and Keldysh, L. V.
TITLE: Impurity Conductivity of Germanium at Low Temperatureit
PERIODICAL: Doklady Akademii nauk SSSR, ig6o, vol. 135, No. 6,
pp. 1361-1363
TEXT: At temperatures T