SCIENTIFIC ABSTRACT YELISEYEV, P.G. - YELISEYEV, S.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001962610003-3
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 15, 2001
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

001/048/064
B108/B18O,
AUTHORS: Yeliseyev, P. G., and-Kalashnikov, S. G.
TITLE. The reoombinative properties of nickel in germanium
PERIODIGAL; Fizikat ,tverdogo tela, v. 5t no. 1; 1963, 320-326
TEXT: To clear up discrepanciep in published data on the electron trapping
cross sections of Ni~and Ni- in P-type Ge,'the'authors studied the life-
time of the.e)cceee carriers in dependence on temperature, nickel concentra.-
tion, and dislocation density. It was measured by two methods: (1)
comrensation of the photomagnetic effect by photoconductivity, (2)
attenuation of' photoconductivity. The results were the same in the range
0
120- 330 K. The Ge crystals were doped ivith nickel by diffusion., either
from an elect~oly'tio layer onto the sample's surface or from a solution
of nickel in'jaolten lead. The results Wer 0 qualitatively the same and
sliwed only a slight quantitative difference (20 - 30%). At low Ni.
concentra'-pna, the lifetime-varous-temperature curve has two plateaus,
with the life-time falling with decreasing temperature in between. As the
Ki concentration increases, th e curve maintains its two plateaus, but the
Card 1/2

S/18 63/005/001/048/064
The recombinative properties of B108XB160
lifetime in the intermediate section tends to i~Cr'eaae with falling
temperature (G. K. Wertheimi Phys. Rev., 115, 371 1959). The higher the
dislocation density, the higher is the Ni concentration required for this
transition. an, the coefficient of electron trapping by Hi ions, is
0
greater than a 9 the cooffioiont of electron trapping by neutral Ki ions.
n
0
a is virtually independent of temperature. The-temperature dependence
n ,- 10 - 69 0 -9
of an c6uld not be established. At 300 X9 a n 3010* and a n 0-5-10
CM3 /sec. There are 5 figures and 1 table,
ASSOCIATION: Moskovskiy gosudarstvennyy universitet im. M. V. Lomonosova
(Moscow State University'imeni M. V. Lomonosov),
SUBMITTED: August 14, 1962
Card 2/2

ram
77--
7
ACCESSION MRt AP4039-689, S/018l./64/006/006/1900/1902;
iAUTHORt -, Yunovicho A go I jjjj~xgyt jt. oval I*
I t _tt_,qjj Nakhoda
I
ti Ormont#.Ao Bel Osadc~ayap Le,,Ael Stuchabn kove VO Ne
V f
11TITLE3 Radiative recombination Ln*Zn-dLffused GaAs p-n.junctLons
SOURCES, FLxLk& tveidojjo',tsla,,.v, 6, no* 6,' 1964~ 1900-1902
ITOPIC TAM recombination ridiefton, radiative recombination,
electrol-usi.nescance, p &'Junction,,,G&As laser, GaAs diode, semi-
c*n-ductor Lasero laser, junction laser, injection laser
ABSTRACT: Recombination isdLation.,from-Ba-doped GaAs p-n junctions
was -investigated with a view toward possible laser application of Be-
ddped GiAs in action dLodes.-'.The GaAs with a.-carrLer concentration
-. -. - 4 CM-3
Atween 5"101 and 1016 was dIffused wL.th Be in vacuum at
2
9VO Ce The junction was, about-361V3,cm In one of the diodes the
J_C&W-i~fion was 30 u dptpp -Two paraftel -planes'were cleaved porpandLe-
ttVar.! to the junction. The. recombination radiation spnctra were'
ob't d by injecting carriers with curren't pulses up to 1. 0 imp.
iLne 0
Vhe',pulse duration 4&s 1*2. -and the,,rep&tLtLon rate was 50 epee
t-3 V/
Card 3

ACCESSION NRt AP4039699
IThe recombination spectra at 77K:ohow "at the intensity of emission.
jis vAry similar to that~ of Zn-doped GaAs diodes# The maximum occurs
lat,L47 eve The line ioLdth. 't heklf max.Lptum and.at a. current densLpy
.8,103 amp/cul was 64,
tof 2 Some WarrowLng sn4tnonlLneir Increase
of intensity were ohoarved.at hilgh currept densitiest Analysis of
lc~`rrent-Voltage chars c tariatice snd~rscopbination spectra shove that
;IBG is an acceptor impurritys. The maximus,solubility pf Be in GaAs wasl
';fdund to he gre' 1918 3 lative recombination in Be-
ater.than ca- Rad.
~;doped GaAs has a highei degree of,probability then In GaAs d9ped withl
:Zn. Assuming that radiative recombinatign in Zn-doped GaAs is due to'
):transitions between thi'conductlon band and the acceptor levels, the
1energy ljovel formed by Be is'close'to that of Za in GaAs. The.narrow~
.ling of the line was believed to be caused by stimulated emissions
~which f.act would indicate, thapo sibility of obtaining laser action In
degenerate GaAs .,dopod wiLh Origj~ art has i 211gures.:,
ASSOCIATIONs Moskovskly gasudarstvanny*y universitat INS-Mo- Ve
;Lononomova (Moscow State University),,
z/-3
LC . IiA

'&a'- -7~~"'~ Z -fwn

' ACCESSION MR1 AP4039689'

-1 SUBMITTED1 20Jam63 ATD PRESSi 3059 ENCLS 00
. '

I
SUL CODRs-
S&
SOVs -002'
NO RN
F
OTHRR's 066

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'ACCESSION URI AP4039693
~AUTHORII Yuno
vich, A " go; ,P 0 rMon t 0 A.
'Osadc:tsys, L. A.1 Stuosb4ikov, V.
H.
re of coherent radiation spectra from GaAs p-n
ITITLEi Structu
..,junctions
ISO'URCE, rizika tverdogo't~lai-ve 6' noo.6. IL9649 1906-016
G&A
,TOPIC TACSs alaser, semiconductor laser. laser, junction Jae
44-t9 coherent emission., !:oherent emission spectrum
Injection Is
~IABSTRACT: The strucLure of iecombinabion radiation emitted by QaAs
p-n junc.tLoi lasers operating,at-77K was investigated, The diodes were
fabricated by diffuiLon.of xinc 'into GaAs wafers. The carrier concen-
tration of GaAs was about 70101-7 cm-3.' The 'carriers were Lnjected
by applyLngeurrent pulses of Vto 100 amp, The duration of the
pulses and the ropetit;on.rate were 14 pasc and 50,!cps, respectively,,
For different diodes the threshold current density varld betvoon
3 On
Z,69103 and 11o103 amp/an a 'to three- lines g abo t
u or 1&68
i;vida, appeared near the main amis.sion-peak at the threshold currents'
iCard 11/3
7

LC,C_ ~S-S~~,O'N- __N_R-s__-A, _P -40 39 69 3
As the' Icurrent denalty", was 'inc iesse'd taba number *o '.peaki (all 6f vhi'
e. h
in a longwove.part of the speepr.un 7-.35 Lwida) Increased
to 10-15, and the usip peak was shifted lAto ChIs ppectral region..
~Some overlapping of neAghbo,rifig lines,vAki observeoe,i The line width
:at half maximum varied, ifromi,less than,l A to*2.5-A. The separation
between the majority of the adjacent peaks was 3o5 ;tOJ,A. Thle
iintensity of the main peak was highest Xor diodes*wXth ~he smallest
!number of maxima and the,lesst'.ahiftingA -In s6ch dXodes Lhe series
resistance determined from the 'current-voitage'characteriette~s was
a-l-ightly lower than in~othe* dLodeso Such lasers were also.'aaracter-
ized by a sudden increase of,current at & voltage o'f about 1.47 and-
by a-..thinner'p-n transition region, The structure of the emis 9 ion
spjactra was explained on '_the~.basis of'sn earlier paper (Pi, P6 SorokLn,'
~J._D. Axe, J. R..'Lankards J. AOpl. Phys.. 34# 25530 1963) in which'!
t.t.jf,as shown that spectral.,components of continuously emitting CaAs
J44,,e~rw correspond to different, ca-4*ty tiodes, It was calculated that
,tlkqfl~diode temperaturi incre'ased-by 5-15K during tho.duration ofthe~
'I ';p q1, a 6This was In -agreemetnt with- the experimuntally observed tam----
,,-,Pr, 'ture -variation,,: Origi,,,Q-.,L4, hags, 2' f I Sure's
3,
'Card
2

A(M -2 FXA h c
(k)
3632
ACCESSION NR:. :AW_5e421358 -UR/0120/65/000/004/0180/0182
t
621.31 -.592:
5 621 378 325
a/
Yun
AUTHOR: Yeliseyev, P. ovich, A. E.
TITLE: The Production of semiconductor lasers by cleavage shearing
SOURCE:. -Pribory-i -tekhnika ekspe.4mentai-no. -4,-1965,-180-182--------
TOPIC TAGS: semiconductor laser, semiconductor single crystal, laser, laser _t__h_eor
ABSTRACT- Cleavage shearing. Is-beingy assfully used for t;ie production of-injection
4! e
lasers from semiconductor crystals7f, a short survey article the authors discuss 1) the
basic advantages offered a priori by-the shearing method; 2) the basic difficultins-
encountered--durin-1lib application -of this production procedure; and 3) the advantN;mus use'
g
Of certain peculiarities of crystals if one of the main crystallographic axes coincides wV11
h - diffti I - --dl --- tki ex vestigations of -
e a on rec on. perimental results of coherent diode laser
t
au ore. thank V.
the thors hava been published-earlier. "'The auto S. Vavilov~ also E. A.
-Poltol Ai-OsadcheV~'~V~Mv-St;ichebntko~'.)i.-Ai-Nakhodno dAz...~B(L3LoAL-_yp.
for useful discussions and help during the study." Orig. art. has: 3 figures.
rd 1/2
-Cc

/DiA(h) 5 TB;'1JF(c)
L 2972!,66_:,4~A(~)j 2 G17
ACCESSION NR: AP5021726 UR/0386/65/002/002/0058/0063
JAUTHOR: Yeliseyev, P. G.; Novikov, A. A.; Fedorov V. B.
TITLE, The effects of optical interaction of two diode lasers
;SOURCE: Zhurnal eksperimental'noy i teoreticbeskoy fiziki. Pis'ma v redaktsiyu.
Prilozheniye, v., 2, no,. 2, 1965, 58-163
!TOPIC TAGS., In Iser, diode Inner, gallium arsenide, gallium arsenide Irser, Injection
laser, semicond.uctor ,laser, opticalinteraction
!ABSTRACT: The optical interaction of two diode lasers placed less than 5 V apart I
was studied experimentally. The gallium arsenide p-n diodes obtained by cleaving a,
Isingl,e,crystal into t Iwo parts 425 and 1450 p long, were placed in the same plane in!
Iliquid nitrogen and pumped by square-wave current pulses with an amplitude of
)0 5-2.5 amp and a duration of 1.5 Nsec from two oscillators. The emission spectra
w;re observed by means of ISP-51 and DFS-8 sp-2ctrographs and were recorded by an
:FEU-22~ photomultiplier. The emission , ectra of the 425-p (short) and 1450-11 (long)'
;diodes were in the Ishort = 8420-84351 and Along ' 8465-8478 X region3, rcspec-a
Itively, atid consisted of modes spaced 1.7 X and.0.8-0.9 X.apart, respectively. The
-----,---!OpticaL-interaction-was-evidenced-when-during-the pulse-coincidence-the relative

L 2912-66
ACCESSION NR: AP5021726--- -
7-t
maxiina of the Xshort,and Xlong lines changcd correspondingly; moreover, a decrease i
in the Xshort aud an increase,in the Xlong line intensities were observed from the
short diode side, while an increase in the intensity of both lines was observed from
the long diode side. Thus,,tbe optical interaction effect, as observed from the
~-_--short--diode -side i-~was- the Aecrease --in- - line-- interisi t3( _f r 0-M t e short diode-side due
to-the--introductioii-of-an.external-emission-into--its active-medium, and.- from the-
side, an increase in the intensities of both lines due t ,o the time coin-
cidence of pumping pulses. The opticalinteraction is fur.ther explained in terms
of the effect of coupled modes on the popu~#~ioq_of_tkip,--!~nerg-t-levels,--Orip,.-art
[Y.K]
ASSOCIATIONI ifietitut''tachnoy, mekbairiiki i vychisli,tell-noy tekhniki Akademii nauk
~SSSR (Institute-ofTure-Mechinics and Computer Technology, Academy of Sciences,SSSR)i
SUBMITTED: 25Hay65 ENCL: 00 SUB CODE: EC OP
NOREF SOVI.- 000 OTHER: 005 ATD PRESS
V f\,
CO
L

ACCESSION NR: A~5022443 WG VV0109/65/010/009/1729/1730
621.318-325.001.5:621-383-52
Iq S
~AUTHOR.#, Ambartewwan, n: Basov. N. GO; Yells!
uev,-PA; ZuYev. V.
K ukov, P. G * -
St2zloy. Yu. Yu.
NV
TITLE.
The measurement,of the time parameters of a giant pulse laser by means of
a photodiode
SOURCE: Radiotelchnike I elektronika, v. 10, nd. 9, 1965, 1729-1T30
TOPIC TAGS.-- giant-pulse laser,'galliim arsenidejphotodiodes resolving time, Kerr
cell, photomultiplier
ABSTRACT:- The time--dependent characteristics of a giant pulse lasqr switched by
aXerr cell were measured by means of a gallium arsenide~pbotodlode. The photodi-
3 con_
ode was obtained by- diffusion of cadmium into.n-type GaAs with a 2 x 1019 cm7
centration of tellurium,during a period of 60.hr. The depth, thickness, and area
0 e-z-n-.Uu=tion-werc -80 u 0 - u - and 2.5 x 10-
3 CM2. iesuectively. The iDhoto
(601M -
-th -ooa-&-75 ohm load -vas- 0-nanosee-at room
from e photodiode, ected4ci temperw..
ture, and 20 nanosec at 77r.. The results Indicate that the resolvIn6 time of the

~7t
UR U 10 1 1~ r7C, 7 1 (_)f_
SOURCE: FirikA f vA-r-4ei&rx

. . . . . T . . . . - ~ - -~- -I ~ N C CC - . L, -. . .- ,

2 297-6 -.,FBD/EWT(1)/EWT(m)/-EEG(k)-P/WivkwA
A?6012506,
ACC~M WG/JD SOURCE CO 371785
...AUT11ORi Ye iseyev, F. G,; Ispallov, I.; Nashellakiy, A. Ya,; 09trovskayal V#
ORG-s- Physics --- Thatitutd-7ifli- ev AN
Fizicheakiy inatitut
Hoscow..
AN SSR)
TITLE: Coherent radiation of anjndiu arsenide-ph a hide p-n diode
V1
A -1285
SOURM Flzlka tljerdogo tela#. v, 8) no. 40 "966t 1283
TOPIC TAM coherent radiation pn diode, indium arsenide, indium phosphide, solid
state laser, infrared laser
ABSTRAM InPA9*crystals were obtained by two-temp~ratufe step-by-step synthesis
(A. Ya. Nashel'skiy, Byull.'izobret., no. 12,40, 19,6q) Antoonjunction with oriented
crystallization. Subsequent treatment of synthesizec~ipecimens (P - 94%, As z 6%)
containin lar e (1 CM3) seeds was similar to that.used in the preparation of GaAs
diode iMers;Aie diff-ision of tile ac'ceptoi impurity (Zn) from ZnA92 was carried
out in a sealed.tube at 750C during a period of 30-min. Fabry-Perot type resonators
were used with distarices between mirrors of 0.5 and 0635 mm. Coherent radlation
from these specimens woo at 0.942 V and the tbresholld current densities at 77K were
from,2.5 to 6.0 x lO3amp.cm-2`\\tLine narrowing was obso~rved at threshold currents
(-5300 atop.cm-2) and at 1.5-i ites their value produc~d,spectral wi.dtho of
Cord 1. 12

L 2 1, Z, 9 7 - W-
ACC NRe AP6012506

--12---15 sup rthreshold -curren ts equldistant, (2-46 -spiking was observed in--
I- -,the. spectrum of stimulated emission from a,35-= resonator. Orig. art. lwi 1 2 f ig-
ureat IYKJ
SUD'CODS; .20/. -:SUDH-DATCI, 0SHov65/ ORld REPI 0021,- OTH REF I OO'S/ ATD PRESSI

0 P

k

12'

Card
3

)/Eltr(k)-~4aWR(k) 4F JI-
dou - -dODE: 106176' 41/1342
o15449 Rd 6100 00 13
AUTHOR~: Basov N. G,;:Bogdankevich,-o.-V.-' lelise-yev, hin, - B.- 14, -
ORO: Physics Institute im. P. N. Lebedevj AN SSSH, MoacLw (Fiz1cheskiy'-'-','1_;1V
institut AN SSSH)
J
TITLE: A solid solution GaP,,,U,-, laser'excited by a beam of fast electrons
SOURCE: Fizika tyerdogo tela, v. 8, no- 5, 19661 1341-1342
TOPIC TAGS: ,IaBer, semiconductor laser, coherent radiationt gallium pjj~id~
gallium arF;t-nldp.
1~7
ABSTRAM, Laser.action at nitrogen temperature.is reported in n-type CaPxAal-x
excited by a beam of 50-kev electrons. The GaP concentration was about 20% and that
of uncontrolled donor impurities, n,10117 cm-3. The GaP As, samples were obtained
by epitaxial growth thr-ough gas transpo-rt reactions. he aximensions of the sample
were 0.48 x 0.75 x 2.5 mm. The Fabry-Perot cavity (cavity length 0.48 mm) was
prepared by polishing the sides of the sample. The experimental arrangement was
similar to that used In electron beam excitation ofGaAs (Fizika tverdogo tel , v.
nom 1, 1966, p. 21) except that,a monochromator with a resolving power of 3 R was
used -Instead of the spectrometer. The pulse duration and the repetition rate were
2 psec and 60 pps, respectively. At current densities (J) less than 0.3 ampl=2
dpontaneout-ettdosion--peaked-at-a_yavelength of 8300 (half-width of about 1000
Card 1/2

ACC NR; Ap6o:L5)i48
Above A'sm ~a a-e-c-on--A -peik amd at -appxvaidmately J0001. The ena
int ity
__of-the-te&.-_at 70001 increased much -faster than that, a-t- 8300 A. so that at
J, 1 amp/cm2oth6 intensity of the former peak _ was. 10 times greater - than that of -the -
peak at, 8300 A.- Fig.-l. shows the~emission sRectrum at different values of J. The
smallest value of half-width obtained was 12 A. The diverSence in the plane exposed
to the electron beam was 14-150. Depending on the quality of the resonator the
k
Fig. 1. The emission spectrum of
43
US: Gap As 0,8
Q2
amp/cm2:
I - 0.5; 2 0.75;
2 3 4 3,5,-
6030 MW 6950 70M 7MU'-' 7100 7150 IM
oscill;ition threshold varied between j 1.5-2.5 amp/cm~b'. The duration of the laser-
pulse-was ncy'. greater than 100 nsee; Orig. art. has 3 figureei [CS]
SUB dODE: _20/ SUBM DATE: 26jul65/ OMG REFi 002/ -OTH REF- -002/ ATD PWS:yz
Q90
2
/2

NRt___A_F_6_0_30_9__5__9
Ete tk-)/_-7w7 (-+,) / Z- 4T_'_ ( c,) ~~WCf-j D-
SOURCE CODE: UR/0181/66/008/009/2610/2615
AUTHOR: Basov, N. G.; Yeliseyev, P. G.- Ismailov I.; Yakobson, S. V.; NaBhel'
IIA. Ya.; Pinaker, I. Z
ORG: Ph i s Institute im. P. N. Lebedev, All SSSR, Moscow (Fiz.cheakiy institut
1'5V. c
AN SSSR
_V1
TITLE: Certain properties of lnP lasers
SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2610-2615
f_3
70PI 'C TAGS: solid state laser, semiconductor laser, indium phosphide laser, infrared
laser , PY.P-5P-V,,DE
ABSTRACT: Stimulated emission of InP diodes in the 9060-9080 A region was compared
with that of their GaAs counterparts (see Table 1). InP bars were prepared by the
directed crystallization method in the form of large-size polycrystals grained in the
direction of the bar axis. The bars wEre tellurium-doped with electron concentrations
of 5.1017 c.73. The diffusion of zinc from the gas phase into polished plates each
containing 2-3 seeds took placef at 750C over a 30-min period. The depth of the p-n
junction was 35 V. The electrical contacts were made of gold which was sputtered on
plates at 400C. The bar ends were polished and the sides were roughly worked. The
GaAs diodes were prepared in a similar manner with the following exceptions: diffusion
of zinc into GaAs lasted 4 hr at 850C under excess As pressure, and the resonator
Card

L!_~ 44600-66
A C NRt AP6030959
nf TnP AnA ftnAa Indarn
InP I GaAs
Electron concentration in the n-region, cm-3
electron mobility in the n-region, cm2/v-see
Concentration of zinc in the gaseous phase during diffusion, cm-3
Diffusion temperature, *C
Diffusion time, hours
Length of Fabry-Perot resonator, mm,
Wavelength Of stimulated emission I A
Threshold current density, amp/cm
Threshold current density after one surface is silvered, amp/CM2
Loss factor a, cm-1
Cain divie-:.- by current density, S. cm-amp-I
5-10" 5-101'
2000 3200
3-1018 7-1018
750 850
0.5 4
0.8 0.9
9070 8480
7200 940
4700 630
8 8
.7-)D-312.5-10--?
surfaces and diffusion plane were produced by cleavage along the contact plane. The
diffusion depth in both cases was almost identical. As regards the width of directi-
vity,. InP lasers (5-7*) were shown to be superior to GaAs lasers (14-19')by a
factor of 3 or 4. InP laser diodes were characterized by a low loss factor (.,7 cm-1)

--L--44600-66
ACC NR, AP6030959
and a gain relatively lower than that of GaAs, expressed in a linear approximation an
k so 3.4 X 10 3 j cm- , where j (amp/CM-2) is the current density. The latter can be
due to a lower (than GaAs) quantum yield and to a thick active layer (8-10 u).
"he differential efficiencies of the InP laser made it possible to deliver pulsed
power of 7 watts at 75 amp at the liquid N temperature. Orig. art. has: 2 tables,
'! figures, and'3 formulas. JYK]
SUB CODE: 20/ SUBH DATE: 17Jan66/ OTH REP: 012/ ATD ~PRESS: 5078
(3

ACC kRi A~6030 SOURCE CODE: UR/0181/66/0083)1-19/2 16
00
AUTHOR: Basov, N. G.; Yeliseyev, P. G.; Zakharov, S. D.; Zakharovj Yu. PS;
PEjaevskiy, 1. N~; Pinsker, I. Z.; Strakhov, V. P.
ORG: Physics Institute im. P. N. Lebedev3AN SSSR, Moscow (Fizicheskiy institut
AN SSSR) .
TITLE: Certain properties of GaAs laser diodes
SOURCE: Fizika tverdogo tela, v. 8, noA, 1966, 2616-2622
TOPIC TAGS: solid state laser,,semicanductor laser, gallium arsenidejlaser7
ABSTRACT: Phenomenological methods were used in on experimental study of certain
properties of GaAs laser diodes (loss factor, quantum yield, differential
efficiency, gain). The specimens were prepnred by the diffusion of zinc into n-type
GaAs crystals with electron concentrations of 2 X 1018 cTji-3. The cavities consisted
of silver mirrors sputcered on polished crystalline surfaces pre-coated with a thin
layer of SiO, and the electrical contacts consisted of sputtered metal (Au, Ni, In,
SO films and fused-in electrodes. T~e measurements were carried out at 77K and the
pulsed output was recorded by a calibrated silicon photodiode. The lowest threshold
currents occurred in diodes.which were cleaved on all four sides. A threshold current
of'25 mamp was attained at the liquid He temperature and at a'density of 75 amp/cm2.
C_w operation was observed from diodes with I thr < 0-5 amp at 4.2K. The results
_qqM _1 12

44601-66
ACC NRi AP6030960
0
in icate that the transformation of electrical power into optical power occurs with a'
yi ld of the order of unity and that the greatest loss is due to absorption in the
me ium inside the cavity. The loss coefficient for the better diodes was 5-10 eel
,at,,77K, a value which had been theoreticallypredicted elsewhere. The highest
di;fferential efficiency at 77K was 67%, although it was much lower in the case of
4des with Fabry-Perot cavities under high Ithreshold current densities and in four-
aided diodes with low threshold current densities. The efficiency of the p-n junc- i
tions was 0.5-0.55 with a 25% gain, which took into account losses. in series
resistance. Efficiencies of 60% were achieved in the case of optimal reflectivity
and cavity length. The optical gain*ln the subthreshold region was 3.10-2 1 cm-1.
Orig. art# has: 2 tables, 6 figures, and 9 formulas. [YK]
SUB CODE: 20/ SUBM DATE: 17jan66/ ORIG REF: 001/ OTH REF: 009/ ATD PRESS:
5078
LCard /2
V r

ACC NR. AP700024 .-----~-idaA;9-~6DE"1--'~R?005i/�6/036/012/2215/2216
AUTHOR: Go. Man'kap M. A.
.ORG: Physics lnstitut~ im. P.'N. Lebedev, AN SSSR, Moscow (Fi.zLcheskiy institut
AN SSSR)
TITLE: Using a-seiiiiconductor mirror for the q-switching of a laser
SOTIRCE:.. Zhurnal,tekhnicheskoy fiziki, v. 36, no. 12, l966, 22.1572216
TOPIC.TAGS: JE,_-er,'ruby laser, laser Q~~Switching, laser Qfmo~ulation, laser
lasqr semicopduccor mirror
'AB�TRACT:' The article reports on experimefits with germanium and indium antimonide
mirrors-in a ruby baser to enhance its Q-switching efficiency. The laser was 120 mm
lohg and 9 mm in diameter; its resonator was.formed by one end of the rod and a
Trifrror made froma semiconductor mai6r-Lal. A telescope was used bet-deen the rod end
-ana the mirror to widen the beam incident on the mirror and thereby reduce beam den-
sity and its destrui:tive effect on the mirror material. The effect 'of the arrange-
ment was 'to change the output from the usual spiking regime to that of giant pulses.
Lasers Q-swiiched*by a semic.onauctor mirror-displayed a considerably higher output
per unit'-pumiping energy and a much steeper output pulse'in compariso---.i with lasers
using-interference., metal, or polishedLend mirrors'under freeemissioix near the
selfrexcitation threshold''Or under conditions of Q-switching by a'saturation filter
Card 2

ACC NRs ApiOO1324
.and an interference mirror. The multistep character of Q-switched curves, explained
by the occurrence of Pne,, two, or wore giant pulses in close succession, is less pro-
noun.ced in the case.of semiconductor iairrors because the giant pulses are accompanied
by the uslual spiking as under conditions of free emissions Origs art. has: 1 figure.
IFPI
SUB CODE. 201 SUBM DATE: l8jul66/ OTH REF: 004/ ATD.PRESS'- 5109
A,

f-'ACC 'NRi-A`P!_7_0-0-1'323 SOURCE CODE: UR/0057/66/036/012/2213/2215
'AUTHOR: Yellseyev, P. G.; Isnallov, I.; Krasillnikov, A, L; Manko, M. A.;
Strakh~4,__V-_P._
ORG: Physics Institute im. P.,N; Lebcdev, AN SSSR, Modcou (Fizicheskiy institut
-AN SSSR)
TITL~; Temperature.dependence of the threshold current of injection-type lasers and
*'their c6ntinuous emission under liquid nitrogen cooling
SOURCE: Zhurnal tekhnicheskoy-fiziki,.v. 36, no. 12, 1966, 2213-2215
TOPIC TAGS:.. laser, injection laser, laser threshold current, laser.emission point,
laser emission'threshold, laser'diode
The temperature dependence 6f the threshold current in the 77-200K range
was investigated on diodes prepared by vanor-phase and liquid-state epitaxy methods.
The vapor-phase specimens were prepared in the conventional way; the.epitaxial diodes
were prepared by thle liquid-phase epitaxy method (as described by Nelson in RCA
Review,.24, 1963, 603) from a solution of gallim arsenide in gallium at 920C. The
substrates were gallium arsenide p-type plates doped with zinc at a concentration of
about 7 x 1019 cm--3. Graphs of threshold current vs. temperature for two epitaxial
diodes show a linear dependence (gradients of 1.6 and 1.3; per degree). For vapor-
phace specimens, the grakenit is 3.9Z at 77K; at higher temperatures the gradient
'declines slowly. The threshold current densities at 77f for vapor-phase diodes lie
Card 1/2

ACC NR, AP7001323
wit hin the 800-2000 amp/cm2 range, and for epitaxial ap(icimens, between 1600-8000
amp/CM2. ~ formula is given for the conditions of generittion as a function of
threshold current, voltage on the junction, thermal resistance of the diode, and diode
cross section. The formula shows that, at the nitrogen temperature, the threshold
current density should not exceed 5700-5800 amp/cm2 for epitaxial diodea and 1900
amp/cm2*for vapor-phase diodes. Continuous emission was obtained at 1200-1600
amp/cM2 in a number of diodes, but. In some the threshold was not reached because of
overheating.. This result suggests'that the actual thermal resistance is 3 to 4 timen
higher than the calculated value. The difference is attributed to insufficient con-
tact between the diode and the cooling agent. Prig. art. has: .1 figure and 2
formulas. (FP1
So COM 20/ SUM DATEv 18ju166/ -ORIG REFt 002/ 01.11-REFS 012/ ATD PRESSI 3110
Card 2/2

I ACC NRi AP6036992
iiB/618i/66/008/oLl/3383/3386-'I
G.; Ismailov, i
AUTIHOR:_ Yci4eyf~y Ormont, A. B.; Yunovich,.A. Z.
ORG: Moscow State University im. M. V. Lomonosov (Moshovpkiy gosudarstvennyy univer-
sitet)') Inikiv-v)
TITLE: Spontaneaus radiative recombination in Inp p-n junctions at low currents
SOURCE: Fizika tverdogo tela, v. 8j* no. 11, 1966, 3383-3386
TdkC TAGS,: indium compound, phosphide, pn junction, radiative recombination, emis-
,_,.."A61i~_spectrum, volt ampere characteristic, tunnel effect, line shift, temperature
,,T..--~Qi~ndence
TRACT: The authors investigated the emission spectra and the volt-ampere char-
c eristic
s of diffusion p-n junctions in InP at g,"1,7, and 30OK, at current densi-
2
e sup to 102 a/cM . Data are presented on the emission of strongly doped InP p-n
-'Junctions at a weak injection level, and the presence of several emission bands as
demonstrated) including one uhich is undoubtedly connected with the "diaeonal" tun-
neling of electrons through the p-n junction, similar to that occurring in GaAs
diodes. The samples were made from large-block po4crystals of InP, doped with
tellurium, and the p-n junctions were produced by diffusion of zinc at 750C- NTo
groups of samples were prepared, with slightly different volt-ampere characteristicsi
The emission spectra exhibited three bands, connected with the different transitions 1
which are tentatively identified. Tae widths of the emiasion lines are estimated andl
Card 1/2

. ....... ... .
ACC NRo A 36992
the temperature dependence of the line shift is given. One of the bands i's connected,'
with "diagonal" tunneling occurring at small forward brAs on the Junction (T-rom 0.9
to 1.3 volts at 77K). With increasing voltage (1-35 - 1.40), a strong emission band
appears with quantum energy much smaller than the width of the foe-Adden band, which
predominates at high excitation levels and depends little on the current. In addi-
tion at 1.2 - 1. 4 v a weak band appears, due to radiative transitions to a deep level
Awith a quantum energy near 1.0 ev. All these processes are similar o 'those de-
.scribed in the literature for GaAs diodes, Theauthors thank As Ya, Nashellskiy and-,
S. V. Yakobson for supplying the InP crystals. Orig. art# has-, 2 figures and 1
table.
SUB CODE; .2o/ s= DATE:," 19m4-66/ oRiG mm. 0031 OTH RW-.' 005
Card 2/2

- ----------
MEREZHKO, V.G.; YELISEYEV,1YON.P inzh.p retsenzentl IMOFIMOV, S.L.0
inzh,, red,-,---SD--U-KD, V.V., inzb.,, red. [deceased)
.[Mechanization of the repair of locomotives in a depot) 1"13-
khanizatsiia remonta lokomotivov v depo. Moskva., Izd-vo,
"Transport," 1964. 198 p. (MIRA 17:5)

SOBOIEVA, Nina Aleksandrovns.; BERKOVSKIY, Arkadiy Grigorlyevicbl
CHECHINp Noson OeherovichiYELISEYEV., Rpypgplld
V-- -I.- EM
levgpnlypvichl ZERNOV, D. 'o red.j CHE AREVA, A.V., red,
(Photoolectronic instruments] Fotoolektronnye pribory. Mo-
(~URA M12)
skva$ Naukap 1965. 592
p.

ML14j-m- W
YEtismV, R. YE-1
a/069J62/013/006/019/027
310212186
AUT'HORS 1 0. To and No R.
?IT Us Sauchnaya konfortntmiya Moskovskogo inshentrao-fissiahookogo
institute (Scientific Conference of the Moscow Saginearing
Phasics Institate) 1962
orglyst Y; 13, not 6i 1962j 60) - 606
PERIODIGAW Atommays on
TEXT o*
The annual conference took place in Way 196 with more than 400
delegates participating. A review is given of theme lectures that are
assumed to be of Interest for the readers of Atoanays. onarglya. They are
followings A. -I. Loypunakiy, future of fast rtaotoral A. A. Vasillyevo
design of accelerators for superhigh onergiesl 1. Y&. Ponoranohukp
analytiiity, unitarityq and asymptotic behavior of strong Interaottons at
-for the aarf-body
high onergical A. Do Migdalg.phonamenological theory
probl I Yu.'D. Five ki -energy ontlyrotons In..
on deceleration of medium
x~ttorl ilovsklyp theory of the Xdssbauor effect
Tuo No Kogan, Ys.-A. Ios
asanovq theory of ionization losses in aonhoaog*noeua sodium;
M Sy
platmal
Yu. No Iyanovs A*,Ao Rukhadooo h-f condootlylty of-suborLtical
A:
_9&r& 1 44

-----------------------
8/08 19/027
3,02Y62/013/006/0
~Nauohnaya konforontal B
r YASOO
of 30-May electron linoar*aoooleratorl To. Pyatnovo A. A. Olaskov$,'
V. 0. Lopato, A. I. Finogenov, 0. N. Skepskiyo V. D. Solomnov# experixental
characteristics of low-energy electron linear adoolerstars; 0. A. Zeytlenk,
H. Lavin , Piskunov, V. L. Smirnov, V. X.-Xhokhlov, radlooircult
f",, ( Valldner
pavamot ore 11 LUZ)-type acooleratoral 0. A. Tyagunov, 0. A
B. M. Ookhborg, S. I. Korshunovp V. J.'Kotov, To. M. Moroaq moo
classification and torminologyl 0 . Be Milovenoyl Y. D. Varaksid, F. 2.
Zonkoyloh, theoretical analysis of nagnstron oporationj 1. 0. Tragov,
P. R. Zonkovicho calculation of attenuation In a diaphragnated wavoguldtl
Ya. P. Lazarenkot A. V. Ryabtely.,-optlaust attonuation length tor linear
aooolerstorl A. A. ZhIgar:vO. To. Yal "NOT
ni-Mview on trojeotograph.
1. 0. Morosovat 0. A. Tya than 500 ion sourcool
M. A. Abroymno T. L. Komisrovo duoplassatrox-Ope soarool T. S. Kuso*toc-v,
A: 1: Boleyahkovo calculation and production of intense ion live" I
'.*..V M Rybin (Yo. V~ Armonskiy)# inductive surrant'tronsaitters -of high
Isfilitivityl. Ta L Koro::o Ot ke Tyasonivt kinstio doooription.ot'lin*or
acceleration of relativ tic aisotron4l L. Do Tlamov$-phass coo ,i~latlono
in. likear. accelerator@ I B.' L. JurAhtoyn, 0. Y.- Toskromen:kij; bean f lold
v
of facts In the lavoguide of..an slq4troft linoar. 'aaaeleftt rs R' S. Nobovi a

MELITSM, Vladirair Gil- evich; YELISEYEV, R.Yeep rode
(Electron tubes with secondar-/ emisaion and their applica-
tions] Lampy s vtorichnoi errisslei i ikh prim6nenie. Mo-
skva, Izd_vO nEnergiia," 1964. 23 p. (Maosavala radio-
biblioteka, no.514) WIRA 17:6)

GRINSHTEYN, Park Mikhaylovich; KUCHIKYAN, Leonid Mikhaylovich;
Y,,-R.Ye., red.
(rhotoelectric relays In amateur radio receivers] Foto-
rele v radioliubitellskoi praktike, Moskvaj Izd-vo
"Energiia," 1964. 72 p. (Massovaia, radiobibliotaka,
no.533) (MIRA 17:6)

YELISMV, F.G.; KAN CHAN-W CK'ang Chiang-ho]; NAKHODNOVA, I.A.
"Inborn" dislocations and recombination in 16germanium. Piz,
tver.tela 4 no.M2880-28% 0 162. (MA 15j12)
1. Moskovskiy gosudarstvennyv universiUL imeni Lomonosova.
(Dislocations in crystals)
(Germanius-41ectric properties)

SOBOLEVSKIY, inatolly Georgiyevich4LIlLI-MEV,.R.Ye*v red.
(Amateur measuring instrument] Liubitellskii izzeritell-
skii pribor. Moskvap Energiia; 1965. 23 p Wassovaia
radiobiblioteka) no.566) iMIRA 18:3)

[--A-CC-N-R. A14501647 Mono5raph UR/
r
BerIKOV3%1,, Arkadly Grigor'yevich; Chechik, Noson
Soboleyn, Kna Aleksandrovna
Osherovich; M-iseyev, .Renp.0 'v":".n'y8Xicb
-Photcelectron1c 4 (Fatoele%tro.,rwe pribory) moscow, :rzd-vo "nauka", 6s.
0592 p. illits., bibio.,, index. 11,,000 copies printed.
Series natte: Fiziko-matematicbeskaya bibiateka inzbenera
TOPIC TAGS. photoelectric cell, photoconductive coUj photoelectric effect,.
]photoelectron multiplier, phortodiole, photoAxansintor
PURPOSE A'11W COVERAGE: The bo0k prescall-,r, basia infornrition on tba present state of
physics of electronic processes occurring in phot-oelectronic devices., and describes
,:ne desian) paramaters, and characteristics of these devices. The book is Intended
for-~e-hgineers and scientific personnel developin.G and using photoelectronic devices,
and for graduate and undergraduate students at corresponding departimatc- of in-
at-1:11,utions or higher 2earning.
MIX OF CORIEWS (abridged):
Forevoia -- s
Cht I. 'Introduction -- 7
rnrA 1/2 UDC621.383.1*

ACC NRt
AY.6ol 610.7
Ch. 11. Physical principles of photoelectric effect 27
Ch. 111, Photomissive cello 102
Ch, IV* Phatomatipliers 203
Ch, V., Photoconductive cells 392
Ch. VI. Barrier-layer calls 483
Ch..VII@ Photodiodes and phototransisioris---;-~ 557
Bibliography -- 588
SubJect index 589
SUB CODE 1 0 SUBM DATE: 20Nov65/ ORIG W 154/ OTH REP s 09Q
Card 2/2 afs

YELISEYEV, S.A., Cand Tech Sci -- (diss) "Study of phase
transformations in certain iron alloys.11 Mos, 1958, 8 pp inclading
cover (Vin of Higher Vacation USSR. Mos urder of Labor hed
Banner Inst of Steel Im I.V. Stalin) 120 copies (KL, 23-58, 106)
- 60 -

AUTHORS: Yeliseyev, S. A., Livshits, B. G. SOV/163-58-1-32/53
TITLE: The Comparison Between the K-State and the "Increasing Diffusion'
in Some Iron Alloys (Sravneniye k-sostoyaniya i "vosk-hodyashchey
diffuzii" v nekotorykh zheleznykli splavakh)
PERIODICAL: Nauchnyye doklady vysBhey shkoly. Metallurgiya, 1958, Nr 1,
PP 175-1.81 (USSR)
ABSTRACT: The effects K-state and "increasing diffusion" are two phenomena
occurring in the steel melt.
The formation of the K-state in iron alloys in characteristic
Of. the increase in the electric resistance and the simultaneous
increase in the hardness of the alloys,
The "increasing diffusion" effect is also characterized by an
increasing hardness and a decreasing electric resistance in the
alloys.
The two effects K-state and "increasing diffusion" were in-
vestigated and the differences were explained.
In alloys in which no K-state occurs aftar annealing and
hardening such an effect does not occur after deformation.
There are 4 figures, 2 tables, and 11 references, 6 of which
Card 1/2 are Soviet.

SOV/163-56-1-32/53
The Comparison Between the K-State and the "Increasing Diffusion" in Some
Iron Alloys
ASSOCIATION: Moskovskiy institut stali (Moscow Steel Institute)
SUBMITTED: October 1, 1957
Card 2/2

SOV/126-6-4-12/34
AUTHOR: Yolixey 8v, S.A.,
'JAvshi ts, B.G.
TITIB: Investigation of Phase Transformations in Certain
Iron.-Bast A.1loys (Issledovani3re fazovykh prevrashcheniy
v nekotorykh zheloznykh splavakh)
PERIODICAL:Fizika Metallov i Metallovedsaiye, 1958, Vol Go
Nr 4, pp 657-661 (USSR)
ABSTRACT: There are large numbers of alloys vitich, in spite of
the fact that according to metallographic evidence they
consist (within a wide temperatuxo interval) of one
phase only, may, in this tom perature range, undergo
transformations accompanied by chanpa of their various
properties. Alloys of the composition corresponding to
th6 formulas Fi3Ma (Ref.1), Ni3Fe (Ref .2) and =ny
others, undergo a disorder-ord6r #r=zformation. Allo a
of the "Nichromwl' typ* containing 20-30% Or (Ref.3,4,85,
bhe iron-base alloys with 36% Ni and 1-8% Mo and
certain otbor materials are chaiActerised by a
stractural conclition, stable at low temperatures and
Card 1/7 referred to as the K-stats. The disorder-ord*r

SOV/126451-411412/3A, ~i
Investigation of Phase Ttansformatiow in Certain Iron--Bas* Alloys
transformations are accompanied by a denrea8e of thkS
6160trical resistivity of the alloy, while u
transformation from the normal to the K-state regults
in an increat* of tais property. In both casej
hardness is increased and jom* other proportius are
also affected. For otrvjious reasons, freedom from
transformations of this type is very importaat in the
case of single-phase alloys used for the prepaxation
of wire strain-gauges, and the object of the pres*nt
investigation was to ascertain whether such
transf o=ations occur in. carbain iroh-base alloy3.
The main alloying constituent of the 5 inveritigated
alloys was vanadium (8-14%). AlloYs YO-3 and 4
coatained in additioa 2-1.5 and 2.9% xolybdanum, while
alloy NO*5 contained 1.15% aluminium. The carbon
content of the alloys, whose complete chemical
analysis is given on p 6589 did not exceed 0.035%.
High purity metals were used for the preparation of the
Card 2/7 alloys which were melted in argon, in a H.F'ft induction
0

SOV/126-641-12/34
Investigation of Phase Transformations in Certain Iron-Base Alloys
t
furnace. After a homogenising treatment the cast
ingots were forged to 8 mm diameter rods from which one
group of experimental test pieces were prepared. In the
first series of experiments, the as-forged specimAns
placed in evacuated ampoules and quenched from 11500C
were aged for 4 bxs at temperatures ranging from
350 to 650OCt and hardness 11vj ale etrieal resistivity?
and magnetic saturation 4TjJS of the alloys both in the
quenched condition and after ageing were measured. The
results reproduced graphically on Fig.1 show that in thi
case of alloys No.1,2.3 and 4 (the Fe-V and Fe-V-Mo
alloys) the heat treatment, had no effect on any of the
investigated properties. Since no ebaract*ristic points
were obser"d on the dilatomotric curves taken on the
specimens of those alloys heated and cooled at the rate
of approx 200/minute, and since in all known cases the
dizoxdor-ordor transformation and 'the tzensform4tion
leading to the formation of tho J'L-state occur in the
temperature range employed in bbi present in,"otiga-tion,
the experimental results voro.twkon to indicate that no
'Card 3n such tra=formations occur in these 4 alloys. On the

SOV/126-6-4-12/34
Investigation of 11hase Transformations in Certain Iron-Baut Alloys
other hand,, the electrical resiativity of alloy NO-5
(the Fo-V-A1 alloy) was slightly increased after ageing
which indicated a small K-stato offec-bg caused evidently
by the aluminium. addition. Acoording to K& Tin-sui
(Ref.9)9 the causes and. the mechanism of the onset of the
X-stato are the same as those of the Konobeyovaki-
Robanski effect, known also under the namsof "anabatic
diffusion" (Ref.6 and 7), the only difference being
that in the latter phenomenon the atomic segregation
takes place in the strain field while the K-stato is
associated with. atomic segregation in the regions
surrounding dislocations.' On the other hand..Hasigati
(Ref.10) who studied "anabatic dJffusion" in plastic-ally
deformed brass postulated that this effect is also
caused by atomic segregation in the vicinity of
dislocations. If this -were true, the changes of
various pxoperties due to both offsets should be the
same. Howev*rj while the onset of the K-state is
accompanied by an increase of both hardness and
electrical resistivity, intensive "aaabatic diffusion" -
Gard 4/7 which also results in an increase of hardness when a

SOV/126-6-4-12/34
Investigation of Phase Transformations in Certain Iron-Bass Alloys
plastically deformed alloy is annealed in a certain
temperature range below the re crystal lisati on temperature
has been shown on the example of aluminium bronze (Ref-7)
to cause a decrease of electrical resistivity. In order
to ascertain whather the same applies in the case of
other materials, and to find out whether an alloy in
which no K-state is observed after qaanching and agping
is free drom, this effect also when annealed after having
boon plastically deformed, the investigated iron-base
alloys, previously subjected to 4.0% plastic deformation,
were annealed at 400 and 4,r-5000, and the variation of
tbAir hardness and electrical z4isistivity (Hv andf) was
measured, the time-dependence of then* properties being
rebroluced graphically on Fig,,2 and 3, No evidence of
"anabatic diffusion"' was found in the east of alloy No.l.
but it was observed in alloys No,2, 3 and 4 whose Hv
increased and ? decreamed dm,1zig tha annealing
treatment. In alloy NO-5, the increase of H. was
accompanied try a slight (1%) increase of 9 9 which
indicated that in this case the transformation frox
Card 5/7 normal to the K-state had o%acurod., It was concluded

SOV/126-6-'L-12/34
Investigation of Phase Transformations in-Cortain Iron-Baso Alloys
from those results that: (i) Alloys in which no
transformation to K-stat* occurs during ageing of
previously quenched specimens, are also free from this
effect while being annealed after having been subjected
to cQldo plastic deformation. (ii) The effects of a
transformation from normal to the K-state are different
from those of "anabatic diffusioa". (iii) In iron-base
alloys which contain slazonts charaet*risad.by the
body-centred vxbic crystal latticap and in which no
elements crystallising in the fac*-centred cubic lattice
are pxesent2 the transformation from nolemal to the
Card 6/7

S0v/i26-6-L-i2/34
3:4vestigation of Phase Trans f ormations in Cerbain Iron-Baso Allo3rs
K-state does not occur. There are 3 figures,, I table
and 11 references of which 6 are Soviet, 3 Engliah cud
2 German.
ASSOCIATION: Moskovskiy Institut Stali Imeni I.V.Stalina
(Moscow Steel Institute imeni, I.V.StaLlin)
SUBMITZED: l8th June 1957.
Card

6/04 61/025~01 1/0~ I /~~3
1 1; -21150 BI 17%102
AUTHORS; Livehits, B. G., Yeliseyev, S.-A.-, Samarin, B. A.. and
Somenkov, V. A.
.TITLE: Phase equi librium in t,,,o Fe 0 BRO Bystem
2 3
.PERIODICAL: Akademiya nauk SSSR, Izvestiya. Seriya fizicheskaya,
v. 25, no. 11, 1961, 1418-7-121
TEXT: The diagram of the quas4binary phase equilibrium of the Fe 0 BaO
2 3
system was studied. The investigation involved Bt:ructural analysis (by
X-ray and optical microscopy), measuring the structure-independent
(structurally insensitive) magnetic properties (saturation magnetizati-Dn,
Curie point), and measuring the microhardness of the individual phas.~,.
The'specimens were prepared from Fe20 3 and Ba(NO 3)20 and were sintered at
different temperatures, Their compositions are given in a table. The
microstructure was examined on specimens nos. 1-20 sintered at 12000C for
8. 24, and 32 hr, and each of them was ground and pressed after 8 hours.
The microstructure was also exay, -.,d on specimens sintered at 13000C for
Card 1//.,/

B?ow).,Cekj 61/025/01 1/027/03"
~Phase equilibrium in the B117YB102
4 hr (nos. 1-9),'and for 1 hr (nos, 10-12). specimens no. 7 were fouid tc,
consist. of one phase, and specimens nos, 2-6 and nos.. 8-20 to consist.of
two phases. The bright phase in no, 2-6 seemed to be .*hemaW'~,, whereas
the dirk one appeared to be barium hexaferrite BaO-6Fe2O 3' The brtgLt
phase in nos. 8-20 was barium hexaferrite. The dark one could not bq
identified and was designated as X-phase, In almost all ferrites, the
three phases showed constant hardness throughout the above-menticried
perkodsof Ame and at every sintering temperature. The saturation
magnetization was examincd on specimens of the quasibinary Fe2o 3 - BaO
systerr, after sintering at 12000PV for a,'16, 24, and 32 hr, and by [:x-~ndin6
they, intermittently. The saturation magnetization as a funstion of
composition, was found to have a maximum for specimen no. 7, and dropped
linearly on either side of it. This shows that two phases exist in the
ranges of 0-14~35'3 of BaO and 140-57ifa of BaO: a magn~O.An, (Bao,6Ft)2M and
,a nonmagnetic phase. It is hematite in the range mentioned first, and
evidently BaO-Fe 0 in the other. The Curie temperature was measured on
2 3
the same specivienn, I.-) t,`v ran,,.;,(,,of, 1j,, ro, r,r ,i
Oiiri(~ pnin, was
C a r d

S / 0 6 1 /-0 2 ;5
Plhase equilibrium in the B I 17YBI 02
constant wh!~:h is indicative of the heterogeneity of t1his ran,~-,
range of :ompositions from no. 7 to 9 the Curie point is lowered, o a I
due to the presence of' a homogeneous region, In tba rangr- up t,.;
BaO the Cu~,_ie Point was anomalously reduced for spec-,meni no~
4, after 16-7~2 hr of sintei-ir.[;. This -is probably a cons,:,auencr.~
c e i t I - i e c o m, p ~) so n o r i n t Y. P_ s t r u c t i i r e o f t 11 e , I' e r r i r", 1! 0
Ii speclLmenu nos, 2-6, -which vic-re
C 17~,r 2A and 32 hr, hotero-eneity wag establighed by means',
strocturall analysis - The specimens sintered for 24 hr consist Qf
hematite and barium hexaferrite.. On an increase of the BaO conto,~', .1
the mirture, the hexaferrite lines become momintense, whille the
lines ti;rn wealker. In specimens sintered for 32 hr It was
thall; .,iith in,~reasingr BaO content the lattice constant of bariuri
1-raferrite 1-acreases on axis a. and drous somewhat on axis
I-attice parameters are rjuite insignificant, Still, they exce,7-d *1,1":
experimental errors; this should not occur in the
ule binary equilibrium diagram. There are 4 flgur.7s. I table,
1 Soviet and 2 non-Soviet. The referenc,~ to
p1_1bl1,3atAonB rr5ads as follows: Yasumasa Gato, Tr-sh,_% T%kadl,-, J.
Card 3//,,/

Phase equilibrium in the
Amer. Ceram. Soc-,
150 (19'0),
30081
8/048/61/025/011/027/031
B117/B102
Table: Co,,~-.pos it ions of examined ripe cimena.
Leflend: (1)'no. of specitcien, (2) molar ratio; (3) Lioler',, BaO.
Card
Al

TFlISEYKV, S.A.
Doveloping the miorostructure of some ferrites. Zav,lab. 29
no.1017-819 163. (MIRA 160)
1. Magnitnaya laboratorlya AN SSSR.
(Ferrite--Metallography)

L 446246'' EVIT(1)) FdT(m) FCd/T/EVVA M GV1
NRs - - -
ACC
AP5024620 SOURCE ODDE:: UR/004G/65/029/009/1631/1633
11/1633 Al
AUTHOR, Barashenkov, V.S.; Yeltseyev, S.M.
ORG::-Theoretical Physics Laboratory, Joint Instituto for Nuclear Reseafth (Laborator-
iya teoreticheskoy fiziki.0b"yedinennogo,inatitutfit yadernykh isatedovaniy)
TITLE: Theoretical analysis of the Interaction of elementa y_pAr
tqs with atomic
r_ ftlc~
nuclei In the 10-1000 DeV energy region /Report, All-thion Conference on Cc Ic Ray
Physics hold at Apatity 24-31 August 1964/
SOURCE! AN SSSR. Izve-;tiya. Serlya,fizicheskaya, Y. 29, no. 9, t965, 1631-1633
TOPICTAGS: Primarv cosmic ra Y~secondary coarAte ray, pt meson, high energy particle,
particle production, heavy part1cle,
ABSTRACT:- Production m-ul-tip-11-c-I- t-tos- andenergy, angul er, :-and A, rans-verse- momentum-418-
-tribut-Ions-of shower particles produced in 27-3500 DeV:collisions of nucleons with
.02,-A127, and Ga7O--nuclei have -been, calculated, and.1be -resutts- are compartd with
i_.rcosmic'ray observations. The developm ent of the intmuclear cascades was-calculated
by-m-ethods'previcusly emp .toyed at accelerator energies by-oneof the present authors
(V.S.Barashenkov) and others (Nucl. Phys. 24, 64Z, 1961* 55, 79 1964). The follow-
Ing additional- assumptions were employed In t5e: calcuXations - 1) VO % of the ac
conda
'ies 'P~c~fuced -in each Inelast to Interaction with a nuclear nucleon are pions, and 20
are hda4y particles; and 2) the multiplicity and the energy and angular distributions

1 4462.66
gy of 'the colliding p rticles and not on
a dependonly on -the ener a
Ahe*nature'df the-'cotliding.particies or the secondaries. The Inelastic scattering
W'as calciulated with* the optical model. Satisfactory agreement is shown with the ex-
perimental-dato. ---Poor agreemeat- with-certain more accurate angular distribution data
I!;., ascribed in part to systematic energy errors in nuclear emu sion data and in part
~to;neglect of the exceptional role-of nascent nucleons in the elementary act A
qualitLtive explanation for the previously unexplained bimodality of the angular dis-'
tribution of shower particles in the log tan 0 scale Is found In the bimodality of the
angular dintribution of the particles produced in elementary acts within the.Rucleus.
.Orig. art. has: 2 figures.and 3 tables.
--ORIG -OF !--006/-- OM- REIF t- 007---_
SUB CODE: HP/ BURN DATE:__66/__

tT
6 6 0 LSOUI(CE CODX: Ull/0367/U'6/001'/001L/0-3--~6/0i-- 0
AWHOR: Artykov, I. Z.; Barashenkov,
YalircycX,_AtJ'-
ORG: Joint Institute of Nuclear jqaq_0.ZCh,(Ob"ycdincnnyy institut yadernykh
isalcd6vahijY___-_
TITLE: Interaction of elemc~i~L~ pa;:~.~c;~Ss with atomic nuclei in the energy region
1 30 Gev
SOURCE: *Yadernaya fizika, v. 4, no. 1, 1966, 156-16o
TOPIC TAGS: elementary particle, high energy interaction, high energy particle,
statistic analysis, relativistic particle, pion, deuteron, proton alpha particle,
collision
ABSTRACT: The authors present the results of statistical calculations of the in-
teraction of protons with energies 6.2, 9, 17, and 25 Gev with emulsion nuclei. This
is a continuation of earlier work, in which the model of intranuclear cascades followe
by evaporation of nucleon,., deuterons, and alpha particles from the residual nucleus,
was used to explain the experimental data on proton-nucleus interactions at high ener-
gies. The present paper is devoted to more accurate calculations, carried out by the
Monte Carlo method with account of the relativistic three-dimensional kinematics. The
multiplicity of the particles produced in each inelastic wN and Nil interactions was

L 09415-67
-Acd"J~--_
AP603166o
determined by successively inserting the energies of the-produced parti,.-les and trying!
to reconcile it with the average momentum spectra of the nucleons and pions until the
total energy.became larger than or equal to the total cnerpZ of the colliding parti-
cles. In all other respects the calculations were similar to those V, the earlier
work. The new data, together vith the previously published ones, make it possible to
state with sufficient assurance that at high energies, up to several dozen Gev, the
interaction between the elementary particles and the atomic nuclei occurs essentially
via the cascade-evaporation mechanism. At ultra-high energies, above 100 Gev, the
situation is more complicated and many-particle interaction within the nucleus may
play a major role. Orig. art, has: 3 figures and 2 tables.
~SUB CODE: 20/ SUBM DATE: 25Jul65/ ORIG. REF: 0091 OTH REF: 012
212

YELLumv, .S..14. KISELEV)-B., M#' (Moscow)
NAn Exact Solution of the General Problem of Optiman Axisymetric Shapes
in Flows with Detached Shocks."
report presented at the First All-Union Congress on Theoretical and Applied
Mechanics, Moscow, 27 Jan 3 Feb 1960.

Ye..V.
AUTEOR: Artemenkova, L,V. 109-12-15/15
TITLE: A Conference on Electron and Photo-electron Multipliers
(Konferentsiya po elektronnym i fotoolektronnym umnozhit-
.j elyam)
PERIODICAL: Radiotekhnika i Elektronika, 19,57, Vol-II, 1,10 12t
PP. 1552 - 1557 NSSR)
ABSTRACT:' A conference took place in Moscow during February 28 and
March 6, 1957 and was attended by scientists and engineers
from Moscow, Leningrad, Kiev and other centres of the Soviet
Union. Altogether 28 papers were read and discussed. The
paper's were as foliows:
3)B,.ILStepanov - "Some Problems of the Theory and Design of,
Electron Multipliers".
2) Ye.V. Yeiiseyev, I.S. Ipatkin, A.A. Kalmykov, K.V. Mikerov
and"t.M. atepanov gave some experimental data on elec-Goon
multipliers operating at large currents and voltages.
3) P.V. Timofeyev and Ye.G. Kormakova - "Electron Multipliers
of VEI (All-Union Slectro-technical Institute)".
4) G.S. Villdgrube delivered a lecture on new types of
electron multipliers employing alloy emitters.
5) N.S. Khlebnikov - "New Types of Photo-electron Multipliers".
Card 1/4

A Conference on Electron-and Photo-electron Multipliers 109-12-15/15
6) A.G. Berkovskiy et alii communicated some results on the
new types of industrial photo-electron multipliers.
7) L.I. Andreyeva et alii - "Electron Optics of Certain
S ecial Electron Multipliers and its Characteristics".
83 L.V. Artemenkova et alii reported some results on the
study of the dispersion of electrons in electron multipliers
and its effect on their resolving power.
9) L.B. Artemenkova and B.M. Stepanov - "Resolving Power
of Electron Multipliers and its Experimental Determinatioe
10) A.G. Berkovskiy and L.G. Leyteyzen gave some results on
thephoto.!-electron multipliers suitable for the discrimination
of short-time intervals.
11) G.A. Vasillyev reported on an investigation of the
transient characteristics of photo-multipliers by means of a
.micro-oscillograph.
12) A.I. Veretennikov considered the problem of the measure-
ment of the transient characteristicEl of photo-multiplers.
13) E.Ye. Berlovich gave some data vn the transient charact-
eristics of the photo-multipliers,tyl)e J,)Y-19.
14) A.I. Belonosov determined the current time lag in the
photo-multipliers, type O)Y-19 and �,)Y-25.
Uard 2/4

109-12-15/15
A Conference on Electron and Photo-electron Multipliers
15 Yu-A. Nemilov et alii also studied similar problems.
16~ A.A.. Osherovich investigated the basic parameters of the
photo-multipliers, type 43Y .
17) A.Ye.Cbidak6v proposed a simple method for the measurement
of the amplitude resolution of the multipliers. .
18) A.Ye.Melamid.- "Parameters of Photo-electron Multipliers
and the Methods e3id the Equipment for their Measurement".
19) B.M. Stepanov gave some data on the characteristics of a
multi-channel electron multiplier operating at high currents.
20) B.M. Glukhovskqyand Ye.I. Tarasov - "The Activation
Technology of Alloy Emitters with Various Photo-cathodes".
21) A.N. Fisarevskiy.studied the problem of the application
of the Soviet-made photo-multipliers to scintillation spect-
roscopy.
22) I.F. Barchuk reported on the application of a spectro-
metric photo-multiplier to a scintillation y-spectrometer.
23) A.I. Akishin lectured on the special electron multipliers
which could be employed for the counting of ions.
24) Ye.L. Stolyarova reported on the experiments with a
spectrometric photo-multiplier with an NaJ(Te) crystal.
25) A.A. Samokhvalov and I.G. Fakidov communicated some data
card 3/4

109-12-15/15
A Conference on Electron and Photo-electron Multipliers
on a simple scintillation counter, its characteristics and its
application in *-type flav. detection.
26) O.D. Kovrygih, and G.D. Latyshev reported on the -tppli-
cation of the photo-electrion-multipler, type ~3Y-12,to the
scintillation spectrometry and y-type flaw detection.
2?) N.G. Kokina gave some data on the application of electron
multipliers to the monitoring of ultra-violet radiation.
28) N.K. Pereyaslova investigated the spectroscopic chara-
cteristics of the Soviet-made multipliers.
Very short summaries of the above papers -A:ar13 given.
SUBMITTED: July 3, 195?
AVAILABLS: Library of Congress
Card 4/4

GLUKHOV, I.A.; YELISEYEV, S.S.
A now oxchloride of pentavalent raolybdenum - HoOCl - Izv. Otd.
geol*~-khim, i tekh.-~,nauk AN Tadih. SSR no..*L:79-82 159.(HIRA 14:8)
Institut khimii AN Tadz~ikskoy SSR.
(Molybdenum chlorides)

631008100110111046
AUTHORS. Glukhov I. As 9'1!~l
TITLE., Vapor pressure and thermal dissociation of molybdenum
oxy-ohloride MoO01
PERIODICAL: Zhurn&l neorganicheakoy khimii, v. 8, no. 1, 1963, 100-104
TEXT: During the sublimation of.McOC13 a oi-e.proportionation sets in at
about 2400C, acco'rding to the equation 3 MoOCl 3 V* M0013 + Moon 4 + moo2C1 2*
This process was investigated. The amount of nonvolstile MoCl developed'
3
sidual Mo6C13
v!as determined by removing the re -through dissolution in U20
Analysisl.of.,the sublimate led to the empirilbal formula Uo2O Cl
There eiists; h6wevver; a~mfxiu-ie of MOOCIF aha Moo d1' irhiR 6!ninol b,e
separated by fractionated sublimation, as4proved with'& 1:1 mixture of these
compounds. The therniogram of the sublimate, too,~'showed endothermal
effects at 1020C corresponding to the m.p. of M0001 and at 1520C
4
corresponding to the mop. of M90 cl Separation and.1dentification of the!
2 2*
Card 1/2

B/078/63/008/001/011/026
Vapor pressure and thermal dissociation... B10-1/B186
0
two components was carried ut,.by extraction.with GHC1 or in which
3 CC14'
MOOC1 i's better soluble. Foe'the vapor pressure of HoO-01 the following
4 31
equation was found:., log p 8-764 - 5484/T, fxom which
ati
hH 25 kcal/mole, &S - 40 ehtropy'units was calculated forthe sublimation.
By extrapolation it was calculated that the vapor pressure of MoOCI
3
.1 atm at 35
amounts to 20C, and that disproportionation sets in at 2150C.--
There are 3 figures and 2 tabl,.es.
ASSOCIATION.-Institut Xhimii Akademii nauk Tadzhikskoy SSR (Institute'of
Chemi,stry of the Academy of Sciences Tadzhikskaya SSR)
SUBMITTED: March 22, 1962
Card 2/2

GLUIOMP I.A.; Yummy, S.S.
Vapor tnesion and therm~xl dissociation of wlybden= oxyrh1grid-a
~bOC1.3. Zhur.neorg,,khlzn. 8 no.1:100-104 Ja 163. (MIU 16*!5)
I
1, Institut khimii AN TadzhAkskoy SSFu
(~blybden~m'ch-lorides) (Vapor pressure)

-Imn
YELISEYEV S.S.
Thermodynamics of the reactions betwean obloro derivatives of
molybdenum and metal oxideo, DokI. AN Tadzh. SM 6 no.3.*
22-24 163. (KRA 17:4)
1. Institut khimii AN Tadzhikskoy SSR. Predstavleno chlenom-
korrespondentom AN Tadzhikskoy SSR V.I,Nikiti.nyme

YEI'ISr'Mj' S. V.
"Changes in Diameter Corrections Depending on Deforuation of a Limb."
Sub 28 Feb 47, Yo3cow Inst of Engineers of Geodesy, Aerial PhoLography and
Cartography
Disseetations presented for degrees in science and engineering in
Moscow in 1947*
Sum.No. 457, 18 Apr 55

YELISEYEV, S.V.
Yallseyev, S.V. "Geodetic app aratux construction in the UMp"
Sbormik nauah.-takn. i proizvcd. statey po geodazzi, kartofrafflij
topograffii, aeroslyemke i gravimetrii, Issue 20, 1948p p. 71-80
SO: U-2888, Letopia Zhurnallnykh Statey, No. 1p 1949

i
YLUSEYEV), S. V.
Yeliseyev, S. V. - "A new method of determining the correctlons of diameters
of circles of goniometric instruments", Sbornik nauch.-tekhn. i )riozvod.
statey po geodezii, kartopgr&fii, topografii, aerosllyemke i gravimetrii,
Issue 21, 191t8j p. 80-88o
SO: U-4110, 17 July 53, (Lotopia,'Zhurnal Inykh Statey, No. 19, 1949).

ORO
XXTIN. I.I.; SINYAGINA, V.I.; YIMISZYZV, S.Y., kandidat tekhnichemkikh
mauk, redaktor.
(fligh-aceuracy -surveyor's NB level] Vysokotoctinyi nivelir NB.
Moskva, Itd-yo goodezicheakoi I kartografichatikoi lit-ry, 1953.
118 P. (KMA 7:8)
(Surveying-Instruments)

TARDVOT, Boris Dattriyarich; Mlmffxr, -sj. kwAidat, takhnichookikh
!-t.
nan . redAktor; INDZIMMA, A-. ~.,r~tor; IrUZIMIN. G.M..
tekhnlcboskly re&*tor.
(Outline history ca the development of geodetic instrumentation]
Iratkil ochark rasvItII& goodesicheskogo, Instrumnatostroonlia
Y 333R. Pod obshchal red. S.T.211seeva. Koskva, Isd-vo geodes.
lit-ry, 1955. 95 P. (MM 8:11)
(SM'vering-lastraments)

AHAYZVO I.P.; MOEN 13 V kandidat tekhnicheikikh nank, redaktor;
XMOHCHMO,, 7-.T.-;--r-e-aaktor; KM'Knt, I.H., tekhnichankly redalctor
[Opticai,theodoliton of averige a~curacvl Optichaskie toodolity
srodnei tochnostl (tipa TB-I. OTH, OT-10). Pod'obabehei red. 8.r.
Iliseeva. MoskvaI Tzd-vo geodezicheskoi lit-r7. 1955. 150 P.
(Theodolites) (MIRA 8:6)

kandidat tekhalchaskikh nauk,
ROXANDY, Leonid Androyevich;X#k4aW L
MD_ r
rodaktor; SHRONCHXM, F. or; NUZ11111, G.M., tokhalcho
skly rodaktor.
(Technical leveling instruments) Tekhaicheakis niveliry. Pod
obahchai red, 6j,11iseyeva. Xoskva, Izd-v*geodexichs*k*i lit-ry,
1956. 58 p. (Leveling) (KIRA 9:6)

,.S.T., kandidat takhnichookikh
SOOWT, Nikhail Nikolarevich; WIP.W,
or 'IMIX. G.M.. takhni-
nauk, redaktor; 3NJFfDXCRXIMDV'-FS- r;rXk .1 IM
chaskijr redaktor.
[Theodolites of medium accuracy and loss] Toodelitr malol I arednei
tachnesti. Fed obahchel red. S.'T.Blineeva. Moskva;, Izd-vo ge*desiche-
sket. lit-ry, 1956. 96 p0 WaA 9:6)
(Theodolites)

SMAXOT, S.G.; A ANDROV, Tr.; PMISHM, 3*yp; IXOTOV, A.A.; XUZIKIN,
B.S.; LARIN, 'D.A.; ICIY, K.S.: PffaTAYN,
Pol.; RITOY, A.Y.; TIXCFXM, A.A.; TOMILIN, A.Y.; SHISHKIII, T.H.
KUSIKINI G.M.. teitnichaskiy redaktor.
[TrlwMulatl,ou-:on tho,1,2,3.and 4 erder] Instruktalla po trian-
gullatoll 1,2,3 1 4 klassev. Keskya, lzd-ve goodesichasket lit-ry,
1956. 307 p. (HLJA 9:5)
1. Rusia (1923- U.3,S.R.)Glavnoys upravles,'~ve ge*desli L kartogra-
fil. (Triamplation)

---
In S.T kandidat tekhnichqskikh nauk.
Selecting the magnificatIOU Of Ihe telo#4qe for observing trianpla-
tion points. Good. i kart. no*9:36-39 0 156o (MLRA 10:1)
(Survoyinc--Instruments) (Optical Ustrumauts)

Z- YZI
VORONOT, Rostislay Vladimirovich, inzhoner; YIL144UV imndidat
t(:hnichosirikh nauk, redairtor; TASIV -*ip;'V.-gir., 1.4%. Irt or
isdatell9tval ROUNOVA, V.V., tekhnicheekly redaktor
LOPtics In the manufacture of geodetic instrumentaJ Optiks v
goodesicheskon priborostroenii. Pod obsbehel red. S,V.111*eqva.
Koskys, Izd-vo geodes. lit-ry, 1957. 132 p. (KLRA 10:7)
(Optical instruments) (Geo4qmy)

SOT
1UT2021 Act-obehow. T. D.. CarAidet. at Technical let.""
?ITLAt S ImmtIfI4 and Tochatcal Cont.roaco of %be 1110A t 11 (Xa-rww-
12hatch"Wa hoar.restalya, glick I L; it
?010DIC"v law"Saya vyssklkx Gbebygh "V*d.nly. Good.sly. I
aerofet"'7-Ma, 1954. Or 2. VP 114-t15 (MR)
AJ3TXACTa Q~ A. 01nilkarg. 000*81. Candidate at Toohnicel Scloacom, spoke
as 0 211allose U, man ne Is Cartographic Proj-c-
A, Bad so V, ft4l"t* of T*Qhnic&l act*=", ra-
port "Topographical D&otyhering ?roe tam airplane and
sell .0vtor of kortal Photographs In Cartocraphing Imaccavatblo
A. S. Tolatookitew. toolatent, p.. one Ifte Relief
x7rod miles or.pleama.a graphical q.I
1 306000 OW) " . 0 ;1TkJ`ePt*6r, Frotes,trPOD"(Ster of Gengraph.
Leal delgaced. dealt with tn* b..Lo geographic ttuct~r. of
Antarctica 4&4 the 60"equ.At cartogravaleal peculLariti*6 or
the region.
gvegine4v I*. X. Yoklistee, reported an %a. ocaforow. held is ta.
III" 1 11 (ROSOM Ingiaweriad Ivatltmto of Coonewy, Aero-
-Far, !/J,- 'beloaraphy, as& Cartography) from Way a to 10. Th. partial.
PWAt discussed varlove quovttona In relation with the design
of SLastleal and cortograpkical Inetrameate. me" tewo 500
40104at" from manx uaLverattive end walestifia
as sell as 82 reprosoutalLwas or airceroat ag~taa in
Leadmareek, 911", Iv.rdLowak. and other &it&os. "rtacipated is
thin assfr.no.. The verutr Boad or the GJGK. K. 0. LoWafts..
read a paper *a "Scientific lwow~rca Is &trial Camara
S. V.
.,Wiaugo Docast.rovert9d on mrwa present state or Pre.
*"~s of Geocotloal Imatruee*mto. and D"Olopeast of X- I.-
:Sruwasts., P. V. brokyub". rrofto.*F. a..* a lecture on *I,*
G"tr"sloa of PholocrommetrLeal Instrueeosto to tn. tr3t &ad
"old. I. the etw.".% oc%tons 4.*.-
missing 0 lam of goodotical &&A photocrommetrical
Instruments as sell am InaLroments for worzal pao'.0grapfty or.
dtamemased. DocealLs- T. V-LLO-Y" and L^IAS-*r .-. T. Zdoh.lko-
reported 0. tastramet.. gftia*vr t. v.
mKi'mame7akaw dealt -2th tn* a" V. R.
ftmeDw, Caadldate of Tothatcal let"ces, r*vorx*4 an optLoal
Made finders of groalor precision. V. A. VoLtenta. C..4tow,.
of ?*"steel Soloscon. as Optical read* fle4ors 0: "1" a4cu-
Rodiss
or 1. 1. As"Lamovs .44 Tn. P-P~pav. CA.414et. of
ftjrojm&l4bthammtjsaj Bottom". spoke as meebAlators of aptLcal
WN.S. fimeiaev. &"I.-, L. V. Rabins.1ch poko 00 th. - or
Light alloys Lit the memeantax* of geodetical tentremosto.
Dweest S. K. Vurs4va aad. Ragin"r T. K. Sayeako reported am
man 4mo6l&PWA1t8 10 the prodastla. of cowd.11"I I_trus.wI*.
ft'reaser D. Tn. Go -parts dealt mile% %a* optimal systems Is
I
Inatraments. tagla*er A. S. *areas. Smommor B. &.
:kIlIs. Doesat V. 4. Kruselle. Decant 1. S. 11irwon. sm4 1&4&w*or
A
d;,,L,,VGbAkGV lat6r-d the partialpauts, as the reealt. of the
ifle and To"aleal C4.f.r.mee held in Lijoe (Pla"And ..A
Predsatims of 0.04e110,61 Isetrox.sts).
cart 3/5

"Ov 1154-1,8.2., 4
lave3tlya vyoahtka Ucft4bnYkh sa-dusly. C"44ztya I
G4"1AtOd'Y-0k&, 195S, Sir 2- PP 107-10R (Ur,31)
no" coal% 500 specialists participated in to* scl-mmifle Ad
technical 140;fOreame an goud.sy. aeraphotogrwy. and e-Wi.
wmphz be A "a October 24 to 28, 195T. Too totlm%ajt vv-~~nz
to the Plenary *@*:tows of the comf-r*ac.' t. T. Sam-.
the CVCx , to - -- - -
;,""door ' As Is I % Geodesy. atropho 9-TAY.-TIT
Cartography over the ft*% T:rty Toors.- 4. S. Itkeloque. V%J1r.
Geamrsl of the Technical Troops. -The Part PlaAa by Ceod..w
the Defense of the USS1 *' Prorevotor a. V. R."flovokly. -The
provost state and Perspective Development of 4.90pa, tog~vh' 1.
the MR.- ProremeOT F- 3- Wiplov, 'Th, Prbs.at rLt* and Pow.
as Don
"seats, Task* of 0
_,:O"IloTl truction, liethesU!".
day I a opagrapajon p. PA Lao Na"s..j..
Problems And Wa$x of tWectla, the ::pe;- ya. L.
Doctor of Matcal4latkomatical Sot*
In the In, ormt1oml Geophysical Year.- In the Amet3-
domy reports nor* given by the following porsomm. 1. 1.
Camidbtw of Technical latoac~s. reported on "he
0:.,! ".41% Locations, for to* lazablishaent of Zoodwtm Not#.-
or t
L. **egisbyke; Docent. -!-oko as -The -Loses as Fro.,wo~ :,tot.
Mee M . Cocantscal Docent A. 11-
Xu"*tmcv r*Pcrsod 00 -Th* Press*% State 104 1-m*zhilit~ws or
Dvw*TcPnrnt of Astroaamy.- :ra%wwAr V. 1. 341112.4.r p.k;.oft
TM:I;~oontt$tate end PQ#slb%l&%tA~ for ZWVolO;bbM% Of rre
Le" Lug Ima rkswmts.~ In in* av~tlon an aeropbolegrapa.1c,
gocosey Frafeemor O.bl. go.* a loet.r. a -ft-
almal:%of,the totiou of P171.4 &I-went's. 4w4 V.t%.
one fa we "'I me the Pre:10i*m, or the joetmaszo
Docent A. 1. report", as -Th. Deals T424o, of F.rth.r
tom.loping %iFsal Coheres," Tz4isvor I. D. torivemloe *".* to
ft. Awt-flostlow, of Pbo%ogm .. triant Sets.- I. S.
CKA4tUt. Of 000grapolval '*&.mavs. A-1% tth the WObL.ft# r
topcemptical dualpherlag of serial photc4mpfts- Is "t
on camorrupay Docent T. 4. Uaroatis spoke as -.12.
Pirest::: of Mathematlexi Cartograpnf." Professor Va. T. 1~itxavt-
disk. A the acht".0--r. Sea prospects, in the tzold 0: N~-
to to* LY.N. I r. K.ld&Yw..CAmA%s&%. 0:
SOL_ 0 -7 Sys *-.A for P-f.Ctls4 to. I . .....
beeplo R.PMA.4110a of %ft* Unp 2#11*2 .' 1. 1'.
tomtskays, sp"o on-Carteorapkind Cliumnle Coodtiona in tl%o
0,1517. a. P. BeZA"ka.. C.8416.t .1 nslumcoo. re.
ported an -No-krgvstlforo.s and Trees.
purest los" In C.rlagrmpay.- 9.4tseer A. &. geraulev, Poo.
"The 4pplto.tlom of' 11seraftla ftotedrap.. to CortAktropkY."

YBUSEM, S.Y.. do'dio. kand. takhn. naul:
and types of electronic rawe-finder equipment for mass
production. Izv. vys. ucheb. zav.; geod. i aerof. no. 2:115-121
'57. OIIRA 11:7)
1. Mookovekly Inatitut inzheneror geodezit, serofotoswyemki i
kartogrefii.
(Range finding-3quipment and supplies)

3 SM rw 54W
YILISMV, S.V. , kand.tei-di-n-.naa-.-
w '
Da;forzation of limbs in gonlometric instruments used in geodesy.
F777-~ niometers)
GeodA kart. no.8:37-40 Ag '57. (KIRA 10:10)
(Go

6-11-6113
oil AUTHORt Yeliseyev,,.2._.V.1 Candidate of Technical Sciences
TITLEs The Development of the Construction of Geodetical Devices in the
USSR(Razvitiye geodezicheskogo priboro-atroyeniya v SSSB)
PERIODICAL: Oeodeziya i Kartografiya, 1957P Ur 11, pp. 39 - 44 (USSR)
ABSTRACTs A survey is given of the development of the constru-.tion of geo-
detioal devices during the past 40 years. At present the USSR
disposes of a highly-developed optic-mechanical industry which
produces devices that meet the neweat requirements of modern
science and technology. The development of the 'Vwo oldest works
"Geodeziyall and"Geofizikall is shortly described and it is stated
that at the beginning of the thirties geodetic precision-instru-
ments had still to be imported. It was not before 'the "TaNIIGA
i V and the design office of the "Aerogeopribor" works cooperat-
ed, that precision instruments could be produced in 1932 - 1934.
In 1940 the optical preoision-theodolite was completed. A great
event was the production of the pilot wire of invar in the USSR.
In 1950 the quantity production of the TT 2/6 triangulation-theo-
dolite, the OT-02 optical theod-olite and of other precision-
Card 1/2 instruments, among themthe HB-2 precision leveling instrumentcp

6-11-6/13
The Development of the Construction of Geodetical Devices in the USSR
was begun in the"Aarogeopribor" works. Since 1949 the DUB tele-
meter is produced in the same factory. In 1953 a light-telemeter
model which possesses a high distance-accuracy of measurement
up to 10 - 12 km (1 ; 100 000) and high rapidity of measurement,
was turned out. The production entirely meets the demand for
geodetical devices.
AVAILABLEi Library of Congress
Card 2/2

S. V. (Card. Tech. Sci.
"Modern tasks and the state of the construct"on of gecdetlcal
GeodeziL/aj Kartoaafiya, 1957, Nr 1--, 69-(0 (USSR).
report presented at the Sai. Tech. Conf. for Geodesy, Aerial PhotoZriphy and
Cartography, 24 - 28 Oct 57, in honor of the 4oth Anniversary of th3 Octoh~r
Revolution) OrgAnized by Main Office for Geodesy ..Ind Cirtography, Home Office
USSR, the Military-Tofx)grqphtcal Office and the Inct. for 6ug"neerg of fleodesy
Air Survey md Cartography, Moscow.

Y41~kqEXV,,-Sergey-YladimirOTIObe,dotment. kand.takhn.nauk; RUSIHOV, M.N.,
prof#, retsenzent; M(=-~Wj U.K., rateenzent; FHPILOV. B.V.,
prof., retsenzent; SJUCjSV, V.A., red.; UBIOKCHEM, Y.I., red.
izd-Ta; ROKAYOVA, V.T., takhn.z-sd.
(Geodetic instruments and apparatus; principles of nAlculation
and design and specific features of manufacture] Goodomiaheakie
instrwoenty i pribory; onnoTy rascheta, konstruktaii i osobannosti
isgotoyleniia. Izd.2.v, parer. 4 dop. NoskTa, Ixd-TO geodes.lit-ry,
1959. 478 P. (MIRA 13:4)
1. Kafedra optiko-makhanichaskikh priborOT Leningradakogo instituta
tochnoy makhaniki I optild (WTXO) (for RuslnOT).
(SarTayIng-Instrumnts)

3M
AUTHOR: *fe1iL#B2yevt__S. Y.L Candidate of SOV1154-59-1-1119
Technical S "inocal Docent
TITLE: Present State
and,Tasks,
.!n the Field
of Developing the
.
,
,
Manufacture of Geodetical Apparatus (SovremennoYe sostoyani-
ye i zadachi po razvitiyu geodezicbeskogo priborostroyeniya)
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy. Geodeziya i aerofatos"-
yemkaj 1959Y fir 11 PP 3-11 (USSR)
ABSTRACT: The high standard attained in the manufacture of geodetical
apparatus in the USSR is pointed out and the new types of the
last 3 years are listed. The aeries produotion of high-preci-
sion apparatus is described, and it is stated that series-
production of such devices abroad is much smaller. A short
survey of the 14evelopment abroad is given, and it is found
that in a qualitative respect the manufacture of geodetical
apparatus has attained its greatest progress in West and
East Germany. Tho Moopta firm in Czoohoslovakia has been
making optical theodolites and leveling inatrument13 of
modern design since 1555- - The new branches of technology
are mentioned with the aid of which three physical processes
Card 1/4 are engaged for geodesy: 1).The propagation of electro-

Present State and Tasks in the Field of Developing
the Manufacture of Geodetical Apparatus
Card 2/4
S07/115,14-5.3-1-1/15
magnetic waves at a certain velocity. 2) Transformation of
the radiation of one spectral range into the radiation of
another rangeg and transformation of energy of one kind into
one of another kind- 3) Automatic control of high-speed
processes. - The series production of the optical range
fin4er SVV-1 in the USSR is mentioned in this connection.
The "tellurometer" developed in South Africa in 1957 is des-
cribed in short, and-its faults arc pointed out. - It is
stated that at preBent all the elements required for building
a completely automatized angle-measuring instrument (protrac-
tor) of high precision are already a.vailable. Modern electro-
mechanics and electronics are able to carry out the tall
automatization of terrestrial surveys. The only obstacle to
this are circumstances of technical organization, - The
altimeter VA-1M designed in the USSR offers high accuracy
at high spoed of tho vehiclo (car) on which It is mounted
by using an electromechanical compensation of the accelera-
tions. Its mean deviation square is equal to +10 cm. per km.
The use of semiconductors permits the manufacture of an
automatic altimeter which can be fitted to a bicycle.

Present State and Tasks in the Field of Developing SOV1 54-59-1-1/19
the Manufacture of Geodetical Apparatus
A further automatic machine, the so-called "topabinder"
("topoprivyazchik") permits to register the distance covered
by a vehicle with an accuracy required for orientation on
the ground. - The tasks given at present to the manufacture
of geodetical apparatus - now devices, increase in quvlity,
satisfaction of tho demand - are pointed out. The problems
of design mentioned at the Conference in Kiyev on the MLnu-
facture of Geodetical Apparatus are described. - An important
task is the renunciation to the old distance-meaeuring methods.
The accuracy existing in the distance measurement with
available devices is pointed out. A further important task
,is the building of small optical range finders with light
portable feeding rnurcea. More favorable are the prospects
for substituting old devices for base measuring in trJangula-
tion. The principal task in triangulation is the reduction
of signal heights. A separation of the antenna equipment
from the receiver-transmitter in the tellurometer, and
lifting the former to a great height might bring about a
favorable solution. - Some tasks for the manufacture of
Card 3/4 apparatus are pointed out.

Present State and Tasks in the Field of Developing SOV/154-59-1-1/19
the Manufacture of Geodetical Apparatus
According to the development work carried out in the
TsNIIGAiK (A. P. Kolupayev and No A* :Belyayev)it would be
convenient to devise the construction of an astronomical
universal apparatus.
ASSOCIATION: Mookovskiy institut inzhenerov-geodezii, aerofotos"yemki i
kartografii (Moscow Institute of Geodesy , Aerial Survey and
Cartography Engineers)
Card 4/4

AUTHORS: I) Yeliseyev, S. V., Candidate of SOV1154-59-1-10179
Technical ciencoo, Doc nt, 2) Tratlyakov, V. A.,Enrineer
TITLE; Characteristics of the Construction of Modern High-precision
Angi-e-measuring In.9trumento (Onobennonti konstruktsiy sovre-
mennykh vysokotoclinykh uglomornykh instrumontov)
PERIODICAL: Izvestlya vys3hikh uchobnykh zavodeniy. Goodeziya i aerofoto311-
.yeiaka, 19592 1Tr 1, PP 95-102 (USSR)
ABSTRACT: The classical construction of a theodolite is the triangula-
tion theodolite TT-21f/611 developed at the TaNIIGAiK by
P. 1. Sholavitelev, Ye. V..Fefilov,, and I. A. Korollkov
according to the principles suggested by F. 11. Krasovskiy.
A survey on the development of this classical construction
abroad i:; L,.,,iven herey and it is shorm that in the construc-
tion of hLgh-precision, anilo-measuring inotruments preference
should be given to the "optical" theodolites. The second
part of the present paper shows that in the USSR "optical"
theodolites of hi(;h accuracy are being developed at present.
The triangulation theodolite TT-211/611 and the optical theodo-
lite OT-02 are produced at present by the zavod Aerogeoinatru-
.Card 1/3 ment ("Aero-ecinstrument" Works). Individual drawbacks of

Characteristics of the Conntruction of 11-Wern 11ir4h-
precision Anglo-measurinC Instruments
Card 2/3
SOV/154-59-1-10/19
thevo inatrunent3 are pointed out. At the eni of 1957 the
aame factory produced an experimental type of tho hii:h-
precision optical theodolite of the TVO-1 type. It serves
for ineasuring horizrntal angles and zenith diqttnco3 in
pointn of' the triarq:ulatlon of firnt order, The technical
data of the instrument arc Criven. Ita most onuontial foaturan
are: the vertical axial system in a conical one, a3justment in
done as for the TT-2111611; the teleacopc has an object-lens
focal distance of 500 mn; the horizontal circle is made of
Class with a diameter of 16o mm; one readine microscope for
the vertical and horizontal circle and one viedj3e micror'.1eter
by means of which one can read off bj two points (division
lines); the instrument ensures normal work at temperatures
between -250 C and +50o C; the instrument has a put-on-level
with a graduation of 4"q a level on the alidade of the verti-
cal circle with a graduation of 1011, a control telescope
(which no other optical instrument has Got) and optical
centering; the main telescope Is an astronomical telescope
and consistO of a double object lens with focuvin,~, un
optical nicrometer (i-n form of a rocking; plane-;iarallcl

Characteristics of the Constructiou of Modern HiGh- SOV1154-59-1-10119
precision Angle-measuring Instruments
small plate\ and three exchangeable eyepieces. The instrument
is being tested at present in the laboratory and at field
w6rk. According to preliminary statements, the results in
the measi.iroment of anjleo (in ang.Le measuring) are the same
as with the help of the trianGulation theodolite TT-96.
There are 6 figures.
418SOCIATION: 1) Moskovskiy ins-citut inzhenerov LrNodczii, acrofotos"yemki
i kartografii (Irloscow institute of G~adcsy., Aerial Survey,
and CartoerapYy (V__-U-_c;:ytrr; 2) Zavod AeroGeodazicheskikh
instrumentov (10actory of Aerogeodetic Instruments) (Tretlyakov)
Card 3/3

ROKANOT, Leonid Andreyevich; I kand.takhn.nouk, red.;
Alym-"-
KHROKCHINKO, F.I., red,izd-val ROKANOTA,' T.T., tekhn.red.
(Technical levels] Tekhnicheakie niveliry. Pad obshcbei red.
S.T.Bliseava. Izd.2., ispr. i dop. Moskva, ltd-vo geodez.
lit-ry, 1960. 85 P. (MIRA 14:1)
(Level (Tool))

15--1490
A
AUTHOR:
TITLE:
PERIODICAL:
Ye);L as V Docent# Candidate of
L-MidAl Mences
Tr ee cc HKA'I
60096 016;t
3/154/60/000/01/014/017
B0070123
On the Possibilities of Further Increasing the Precision of
Instrumentp pr Angular and Linear 1!easurements
~y
Izvestiya vysshikh uchobnykh zavedeniy. Geodeziya I aerofotos"yemka,
1960, Nr 1, pp 129-134 (USSR)
TEXT: In the first part of the present paper, a survey is given of the stage of
instrument construction and its different branches at home and abroad. The most
perfect ones are optical range finders with a relative error of 1 : 10 6. The
admissible error In measurement of the geodimeter is 1 : 107. The shortcoming
of optical'range finders is the difficulty of.using them during day-time.
The radio range finder, the so-called toilurometerp does not exhibit these short-
comings. In the USSR thq optical range finders M-111s already in use and the
large range finder EOD 'will be produced by the TaNIIGA I K (Central Scientific
Research Institute of Keodesyg Aerial Surveying, and Carj2Era hy). During field
InVest1gations in 1~_58 the root mean square deviation of the direction of the
.theodolite TT-211 611 amounted to about tO"t7t and in 1959 during investigations
in the laboratory to O"j2 (photoelectric recording of the direction)- In 1959
Card 1/3

on the Possibilities of Further Increasing the 3/154/60/000/01/014/017
Precision of Instruments for Angular and.Linear B007,B123
.Measurements
a less disturbed photoelectric device for a theodolite with a straight telescope
and an ocular micrometer was finished. When using photographic recording the
reading errors are also reduced. These can still be more reduced by using a
photoelectric microscope. Orsof the best constructions was suggested by
Kulikovich which Is used at present for various instruments. A simple con-
struction of equal precisl-n is the one worked out by Engineer Ye. U. Feklistov
(MIIGA i K) (Moscow Institute of Geodetic, Aerial Surveyf and Cartographic
Engin2eys). The possibilities of radio engineering and electronics are pointed
ou-T-, and in this connection Vayssell (Vayssell) and Van-Gill (Van-Gill) are
mentioned. In table I the technical data of foreign instruments and of the
theodolite TVO of the zavod Aerogeodezicheskikh instrumentov (Plant for Aero-
geodetic Instruments) are given. Two principally new constructions of
instruments with the aid of which angles of direction can be obtained, are
described. Although they do not yield high precision, the instruments are very
large..Beot results are achieved by gyroscopic instruments. In the second part
of the paper? some theoretical problems concerning 'the increase in the accuracy
of measurement are discussed. It is pointed out that without having -bhe correct
idea of the distribution of errors on graduated circle, the Influence of these
Card 2/3

0 (10A
On the Possibilities of Further Increasing the S/154/60/000/01/014/017
Precision of Instruments for Angular and Linear B007/B123
Measurements
errors oan-hardl.~ be reduced. Taking the average of the results of measurement
enhances the degree of a(vauracy'essentially. Therefore, it is necessary to take
the average quickly and to determine the average during the measuring procedure
automatically. It is explained in short how one takes the average. The important
influence of exterior conditions upon the measuring procedure is pointed out.
Therefore, the environmental influences upon the results of measurement have to
be carefully investigated. The isosudarstvennyy opticheakiy institut im. S. I.
Vavilovs. (State Optical Institute imeni S. I. Vavilov) is mentioned* There is
I table.
ASSOCIATION: Moskovskiy institut inzhenerov geodezii, aerofotos"yemki i karto-
grafii' CX)scow Institute of Geodetic, Aeri
al Survey, and Cartographic
Engineers)
Card 3/3