SCIENTIFIC ABSTRACT YEROFALOV, N.L. - YEROFEYEV, B.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001962820014-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: April 3, 2001
• Sequence Number: 14
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

TORMAZOV., S.V.,- XSROFAW~ NA.
Complex systea of -repairing englamoriql struct4wes, P40 i putAbou
7 no.4:13-24 163. (MIRI 16:3)
1. Nachallnik otdola puti otdolemiyo dorogi,,,~ AIUAtOiya PSM'
Sverdlovskoy dor;ogI (for Tormsov). 2. Glawg7 inab. Permskoy
diotantaii Sverdlovskoy dorogi,(fow Terofalo'Os.
(Railroad bridgia-MLIntenance and repair)

YMWALOV, V. A.
NOV data on the struet of the OloynikoraWyv giss field.
Geol. aefti. 1 ga'sa 7 no.2:60-63 A 163,
(KMA 16t 1)
(Astr&kMn hvvince-aas, Watural-Goolt3gy)

38751
7-7 S/194/6:2/000/005/057/157
6. c,2 D256/D308
AUTHORS:
.jerofeichev, V-.G., and Kurbatov, L.M.
TITLE: Rec 'ording of photoconductivity of PbI3 by microwave
absorption I
PEIRIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 5, 1962, abstract 5-3-60 f ("Fotoelektr. i optich.
yavleni a v poluprovodnilcakh". Xievp All IJkrSSR, 1959,
213-218~ 10
TEXT: Results are presented of an investigation'ofAhe photoconduc-
tivity of PbS-layers carried out at frequency of.'10 cls in order
to determine the role oftthe barrier mechanism. The photoconductivi-
ty was determined by means of measuring the attenuation of microwaves
in a volume resonator under illumination. of the PbS layer placed in
the region of the maximum field. 2 methods of observing the photo-_ Vr
conductivity are described: 1) Wobbling the frequency of the nicro
walre generator and observing the resonance curves on a C.R. oscil-
losc.ope with and without illumination; 2) modulating the light illu-,
minating thelayer and recording the modulation oil the microwave
Card 1/2

-S/194/6;2/000/005/057/157
Recording of photoconductivity ... D256/1)308
absorbtion by means of a detector-indicator arrangement. The ele-
ment's of the experimental installations are described. It is*shown
that the barrier mechanism cannot be unique and that the most im-
port-ant in photoconductivity is the mechanism of basic carrier con-
centration changes. The dependence of tl~e signal upon the intensity
of the light'. was found to be linear at low intenmttie6 and sub-li-
near at higher intensities. 8 references. [Abstmotor's note: Com-
plete translation).
Gard 2/2

203.40
8/16 61/005/002/036/050
,?1:3140 4K-4' /137)//5.Y) B1 02401
AUTHORS: Yerofeichev, V. G. and Kurbatov, L~ N.
%M "WaNs"o
TITLE: Temperature dependence of the conductivity of lead sulfide
layers at a frequency of 1010 ape
PERIODICAL: Fizi.ka tverdogo tela, v. 31 no. 2, 1961p 595-598
TEXT: The authors have reported in a previous paper on studies made regard-
ing the conductivity of PbS layers in the microwave region at room tenpera-
ture, when they found conductivity to be by one order of magnitude higher as
compared with the case of direct current. At 1010 a ps,F, is of the order of
500-1000, and, thus, considerably higher than would result from the optical
refractive index of PbS crystals. This effect was explained on the bllSiS of
the model of the inhomogeneous semiconductor (which consists of well-con-
ductive crystallites, on whose surface regions of a low conductivity appear
with activation, so that the layer resistance in inexeased). A study has
been made of the temperature dependence of conductivity cf. F, and 0 were
measured by the resonance method -6being determined from the shift of the
xesonance frequency, and a from the change of qualit7 factor Q on introcbeing
Card 1/6

20140
S/181/61/003/002/038/050
Temperature dependence of ... B102/94201
the specimen JILnto the resonator. The layers under inveattgation were
sputtered in iracuo upon 10-mm large quartz- or mica iffieets. The a of the
layer was calculated from the electric field strength in the resonator,
and likewise determined by the method of small disturbancee. The resonator
was made of invar and its coefficient of thermal expansion was 0.8ejo-6;
on a change of temperature by 100, its frequency varied by 25 kc/sec. A
mercury diffusion pump served to maintain the pressure in the resonator at
1.10-5 mm Hg, the Hol wave was excited in the (cylindrical) resonator. Q
of the resonator was 12,500 at room temperature .. and up to 16,000 at liqlAd-
oxygen tempercture. The measurements were made in the range of
-183 - +1000C. Fig. I shows the block diagram of the experimental setup.
Measurements showed that the d(T) dependence was considerably lower than
in the case of' direct current. The numerical results of the measurements
are compiled in Table 1 (shf) and Table 2 (d.c., V - 70 v)- If the activa-
tion energy is assumed to obey the formula a = 1oexp(-AE/kT), one then ob-
tains AE of the order of 0.01-0.02 ev (in case of slif measurements); d-c
measurements yielded for one of the seven layers investigated in the range
of 20 - -1350C:AE-0.18. The temperature dependence was found to be little
Card 2/6

JIL
2011~O
S/I 8, 61 003 002/038/050
~.Temperature dependence of B102 1201.
'dependent uporL the I*ayer preparation. As in the pre'viious~paper, the results
%bare explained by the model of the inhomogeneous semic6nductor, using the
'5-formula by Odol:evakiy-LeVini: 6 !(1): ~where
3x/(6 X
ectric constant of'the layer, F, that
(E )C~ ME El E is the diel
2 1 2 1
thgt of the well-conduc-
of the high-resist-ance intermediate -layets and S 2
4%1*ive graine , 31: is the part of Volume, occupied by th.e;e:rains. Fig. 2 shows
to what considerable extent d(T) - here.log~d versus,iO/Px - 4iffers for
d-c and shf me-asurements),(Curve a). The temperature coefficient of con-
ductivity is given by formula (2). The quantities aro designated in the
same way as irL (I the primed F. denoting the real parts,A. being the wave-
length. For 8' - 720t a - 1.6, a 5-10-4y and or 12 ohm-1 - cm-1 , x - 0 - 94,
_4K 'for
and 18 orte obtains X -.6-10 0-5X2. S. P.,;Tibilov is thanked
his assistance and interestj and 1. G. Kopilevich for:having supplied the
specimens. There are 2 figures-, I tabl -bloc reference.
ep and I Soviet
SUMITTED: June 29 p 1960
Card 316

qollzo
8/18V61/003/002/038/050
Temperature dependence of B1 02/B201.
:Legend td Fig'. -1: 1) 43-H (43:--1) generator of
the 3-cm regioup 2) echo resonatorp-,
.:3) matcherp 4) resonator, ~) PbS
.1eyer, 6) metal-houaingt 7) mica 8
Imrindow, 8) vacuum system, 9) 7C -15
(TS-15) thermostat, 110) 3-db attenuatory
11 ) crystal detector t 12) 30 -7 (E0-7)
oscilloscope, 13) generator. A
Card 4/6

U~

-183
-150
-125
-113
i -100
-415
-78
-70
-60
-46
-39
-25
0
-4-20
Card 616

026 104M -us S.5-10-71
'0.26 10250 -150 11 1 "
027 9750 -135 2.3 1"
oas 9sw -123 5.7 1"
0.29 93W -213 u 10-6
03 91()0 -105 IS: 10-6,
012 8700 -96 5.7 10-5
om Moo -88 1.2 , 1"
0.39 7 850 -80
2
0.44 7 300 -59 5.7,10-4
0.47 7000 -33 1.5 10-31
Q5 6600 -11 z6 ior-It
0.52 6350 0 3.3 10-&-
0.54 6250 -4-20 5.5 - 10-,T

30788
7 (10'3 9'1
'AITHOR;
S/1131/'1/003/011/029/056
L, 2! 1) / B 104
.'Yerofeichev, V. G.
TITLE: Temporature dependence of ph*+,ooonAn-.)1Lv1Ay;6nd. lifetime in
PbS J!ilms at a frequency Of 1010 ops
PERIODICAL: Fizika tverdogo tela, v. 3, no. 11! ~961- 3429-3434
TEXT; The photoconductivity and lifetime of 0.5-4 PbS fi!ms chemically
prepared on quartz and glimmer substrates and ,~f ia-.-.kum-19Cos1ted rj2-4
PbS films were studied by the resonator method aT 1010 ~,~n and with
direct current. In particular, the author mqaourrid tine lifetime 'r at
superhigh frequencies by the i-meter method. Fig. '-, ihotnis the temperature
,~_dependence of the logarithm of conductivity fo! thenlcally produced Pbs
films. At superhigh frequencies, the dark phctocondnctlvity and conductiv-
ity are only slightly temperature-dependetti -the photoconductivity
Ad, at room temporature, measured at superhigh frequqnclLos, ia three
'times as high as -the photoconductivity measured' for direct current at
room temperature. A temperature drop to -18300 jr,oreases 'his
differenpe by about ten times. The lifetimes maAr;-,;zed by ;he resonator
Card 1

307&
S/ 61/003/011/029/056
i .9XB
Temperature dependence of B12' B104
(1010 cps) and -r-meter methods (direct current) wire equal from 20 to
:11830C. At a light density of 1 millivatt/om2f I is 611 ly temperature-
dependent. At 0.1 milliwatt/omz, r inoreauen by or(ler of magnitude
'with a temperature drop to -10000. At ever. lower tereperatures,'T changes
only slightly. At low temperatures, the va..ues of Acla for lead
sulfide, measured at superhigh frequencies and Ourrolnt, are
largely different. The lifetimes measured at ipo and diree.,t current
are equal between 20 and -1630C. At suparhtgh f_-jq-ienoiesj all the
carriers in the crystallites make a contribnt!~~-; tQ s;nductivityf and the
change in conductivity under the action of light ~Io r~-,lated -,nly to the
primary photoeffect. The amplification factor K a/(I)j(A d/a~j
vhich characterizes 'the intensifying effect of i7arriirs on illumination,
is about equal to unity-st 200C and increases with d9creSSinfi7 temperature.
At low intensities of lij9t, K increases. Carriere in !ayers are much
less mobile than they are in single crystals. Summi.-ig up: The carrier
concentration in lead-sulfide layers, as determined from thd Hall effect,
is equal to the number of carriers penetrating through the barrier* and
not to the .0 concentration in the crystalliteq. 71'ae:ki-, are. 911vian to
Card 2/k/-3

"0788
3/161/61/003/61/029/056
Temperature dependence of ... 31 ~" 5/Bi 04
'~Tibilovt and V. V. Balakov for discussions, aq wall its So' Davydov, and
1. 0. Kopilevich,for supplying the samplea. Thora (kra 0 figures, 2 tables,
7 references: 2 Soviet and 5 non-Soviet. The three- moot recent
references to English-language publications road a3 folkws: D. P. Snowden,
It. Portisl Phj6- Rev., 12Q, 6, 1983, 19601 R. L. Petritz, Phya. Rev.,
LOAs~1510t 1956; 1. F. Woods, Phys. Rev., 1o6j 2, 235, 1957-
ASSOCIATIOIT: Gosuddretvennyy opticheakiy inatitut im..~S. I. Vavilova
Leningrad (State Optioal Institute imeni'S. I. Vavilov,
Leningrad)
e .196
SUBMITTED; June 14,

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Hill
Hal if
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81

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Alin.

YEGOROVA, Tatlyana Mikhaylom; KAN1VETS, M.A., retament; ILYZHYKH,
I.I., starshego prepod.p retsenzent; STEPAHOV, S.%, assistent,
retsenzent; GRIMIMAII., 14.A,j, prof.# reteenzeal.; (ZIMELIIQX,,
A.M.# kand. ekon. nauk, reteenzent; EUROPATERSO, prof.,
retsenzent; KONTOROVICH, I.A.p starshiy prop... reteenzent;