SCIENTIFIC ABSTRACT ZHBANOV, B.V. - ZHDAN, V.Z.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002064610016-5
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 19, 2001
• Sequence Number: 16
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

-TASINUIY, A.G.; 70ANOT, N.A.; ORIBIOT, A.M.; ORIBINI G.P., oty.red.;
ti-isd-va; BOROVW, I.I., tekhn.red.
EvAlform time and pay standards for oonstruction, assembly, and
repair operations In 19603 ZdAn." normy i rastsenki na stroi-
tel'up y montashup i remoutno-stroitellnys raboty, 1960 g,
Moskva. Goo.izd-vo lit-ry po stroit., arkhit. i stroitematerialame
Sbornik 23. EAseembling equipment for petroleum refinaries) Kan-
I-,,t'ash oborudoyaniia nefteparerabatyvaiushchikh ravodoy, 1960. 37 p.
(MIRA 1316)
1. Russia (1923- U.S.S.R.) Gosudarstyennyy komitat po delam
--stroitalletva. 2*'T.Sentralluoye normativno-iseladovatellsko
byaro.Kinisteretva stroitalletya RUM (for Zhbanov, Gribkorr-
(Wages) (Petroleum rofinarles-Squipment and supplies)

0040~fi6'10310 24/006/007/024
AUTHORs Zhbanov,,Yu. K. (Moiscow)
TITLEs Investigation of.the Free oscillations in the System of
Autonomous Determination of the Coordinates of a Movable
Object
PERIODICALs Prikladnaya mateipatika i makhanika, 1960, Vol. 24, No. 60
-1029
pp. 102~4
~TEXTt..For'datermining'tfte~earth 'coordinates of an object As Yu.
Ishlinakiy (Ref.1) proposed a method which is based on the use of
two gyrosoopiq instruments which give the angular velocities w
and to of the gyrosoopio-'deviationol'and of a computing machini
which 7has to solve the system of equations
(j.1) d1P- co (t) Ga tg%P
( b) sinZ~ 12~ - (t) oos'J
dt dt y
Vx
'COO
dt n,W y(t)
fand are here the latitude and longitudet the angle of
Card 1

S
164OW/024 006/007/024
)
0111/ 0 333
Investigation of the Free Oscillations in the Bystem of Autonomaus
Detbrminatioh of.the Coordinates of~.&,Movable Object
gradient of the path of the~ob~eot to-the line of latitude degree.
If the 'initial conditions are givenj then (1) determines
a,unique.tra4ectory..
The author investigates 'the influence of the natural oscillations
of tlie"applied. gyrocompass a.awell as the influence of errors in
the iniiialconditions.on the results of the determination of the V~
coordinates. At,,fiist he shows that under absence of natural oscilla-
tions t~e'erroneous initial-conditicinsP. 9X 9 0-1 yield a trajectory
a 0
congruent to the real.oney where theerror in the determined
coordinates is not greater than a certain angle S which only depends
on the errors in the initial,conditions; an accumulation of the
err8r-value6 does not take place. Then the author considers the
general case .where the problem of the free oscillations of the
system Is reduced.to the oscillations of the vertical of the
gyrocompass, Under anarbitrarily movable base of the system there
arises in the determination of the local coordinates only one
accumulating errorl this.is the error which the compass shows in
Card 2/3

ZHBRATOVAD,- TONS--p---alladohly nauchnI7 ootrudnik-
Via of artif icial f iber in twisted yarn. Taket. prow. 18 no.11:18-20
N '5 8. (KRA 1l.-:12).
I Rukovodit ii kru nj~ izdeliy TSentrallnogo nauchno-
ell laborator che
is'ledovatellskogo tnatitntA;1ubyanykh volokon (for Zabelin).
2.TSentrillnyy nauchno-iseledovatellskiy inatitut.lubyanykh volokon
Ifor Zhbratova).
(Textile fibers. Synthetic)
Crarn),

SOV/109-4-1-22/30
~AUTHORS: Yelinson, M. I. an
TITLE: Novel Properties of the Electron Emission of the Systems
Containing Thin Dielectric Layers (Novyye svogstva
elektronnoy emissii sistem, aoderzhashchikh tonkiye
dielektricheskiy sloi)
Radiotekhnika,i Elektronika, 1959, Vol 4,-. Nr 1,
pp,135 -.137.(USSR)
ABSTRACT:-..The electron emitters which were investigated.(Bee.,
Figure la) consisted of a tungsten point fixed to a semi-
ring * The point was first given a coating of quartz
'whose surface was subsequently treated with carbon by
employing the thermal diffusion method. The tungsten and
'the outer layer of the coating material are in contact
(electrically)., When investigating the field emission
of this structure,it is found that a stable emission can
be.obtained at comparatively low operating voltages..
'However, at a certain value of the emission current, a
-breakdown effect is observed; this results in the
appearance of a crater on the point of the emitter
(see Figure 1), though the actual tungsten point is not

SOY/109-4-1-22/30
Novel Properties of the Electron Emission of the Systems Containing
Thin Dielectric Layers
uncovered. ~The emission after the breakdown does not
disappear and.displays a number of novel interesting
characteristics. These can be siimmarised as follows:
1) the emission commences at comparatively high voltageB
(5-10 kV); ~2) :a self-activating effect is observed;
the increase.in the emission current is not accompanied by
the increase in the required voltage but, on the contrary,
the voltage decreases; 3) the emission displays an
anomalous temperature dependence; a decrease in tempera-
ture results in an increase of the current; 4) the
emission is very stable and 5) in some cases the break-
down of the emitter does not lead to the appearance of the
above effects butthese may~be stiWulated by heating the'
emitter to a temperature of 1 200 C. The above emission
effects are illustrated by the curves of Figures 2 and 3.
There are 3 figures and 2 references, 1 of which is Soviet
and 1 German.
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AUTHOR$.-.
A.-G.
Basalayeva,~NiYa v Vikhlyayeva,,g.P.,_Zhdanj
Zernov,, D.Vo j KofanovaL_TjIt, 'LPerYoygk. _T77y".
lo-litoTa-0. N.M.,~, ER.~ko~va I Spivak, G#V#I~
Shabellnikova,-A_.E. and Yasnopollskayal A,A.
,~.TITLE:
Ninth All-Vnion Conference on Cathode
Report on'the
Electronics
Radiotekhnika ielektronikas 1!)601 Vol 5, Nr 5
-Pp 866-81g.. WSSR):~
ABSTRACT: This confer 5 m21-28th
ence took place in Mo i cow fro
October 1959 with thepartIcIpation of Soviet acientists
and guests from Hungary, Eastern Germany, the. Chinese
I
ovakla. The cha~rwan of
Peoples, Republic and Czecho sl
the organization committee was-Academician Vekshinskiy.
The report consists of-brief abstrac-A3 of 125 papers
presented at.the plenary sessions and t-he sections of
the conferen presented in.the s ction
ce. 15,Reports were e
on surface properties of.soliels dealing with electron
structural properties of active surface
adsorption,and
'
Ifilms. Electron-optical studies of ~Ipatch fieI4311 on
-Card 1/2 emitting surfaces were discusised. 6 Papers on the'

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E140/E435
~,Reporton:the Ninth All-Union Conference on.Cathode Electronics
physics"of, semiconductor cathodes were given in the
section on thermionic emission. ,17 Papers were
presented,in -the section on.photoelectric emission.
M
y papers discussed in -1-T-f-
an dustria echnology of photocells
and multiplierso- 16 Papers were presented at the section
on secondary-electron emission. The section on field
emission heard ll,papers discussing pulse field
emission at-high current densities, surface phenomena,,
field emission of semiconductors;~and the "condenser"
cathode. More thaii'30 papers and brief communications
were presented at the.s,ection on properties, new types
and technology of cathodes, rtlating to the technology,
of various types of cathodes, their behaviour In
practical, devices and the operating mechanisms of
individual cathodes. 19 Papers were given at the.
section on interaction of solid bodies with 3treams of
charged particles and residual gases. Notes of
.conference discussion indicated that several sharp and
critical'exchanges of.,views took place.
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~8/109/60/005/010/028/031
to33/z415
AUTHORS: Vikhlyayeva,.R.P.,,,Zhdan.,A~~nd Shabelonikova, N*W,,
TITLEs Inter- Institutional Seminar on Cathode Electronics,
(L5th Neert in g
PERIODICAL: Radiotekhnika L alektronika#,19609 Vol.59 No.10,
PP-1747-1748
-TEXTj Six reports were heard at the 5th'Meeting of the Inter-
Institutional Seminar on Cathode Ilecti-onics hold on April 49 1960
at the Ins,titut.radiotekhniki i elektroniki AN'SSSR (Inmtituto of
Ractioengineering and Electronics AS"US.41R). ''In his "The Appli6ation
of Therm6-Eloctronici Emission for Direct Conversion of Heit Energy
into glectrical".. NOD.Morgulis gave, i review of the work carried
out at the Ingstitut fiziki UkrSSR (Institute of'Physics AS UkrSSR)
and also a'. the Kiyevskiy,'gosudarstvennyy univi6rsitat (Kiyev State.
University). Somie.general physical properties of such converters-,
using pure tung&ten, barium and cesium on tungsten, afid thorium'
bicarbide cathodes had'been investigated-. For ThC2 cathodes at
'1900 :to 2100'K, the, efficiency Was L8 to 1519 and the e.m.f.' 1.7 V,
L.N,Dobretsov and N.D,VeVyatkoVLtook part in the d1scusalon.
V B.Sandomirskiy reported,on his and Sh.M.Rogants work on the
C;rd 1/4

s/:log/601005/010/028/031
'Inter-Institutional Seminar.... 90
,external emission of "hot" electrons fr-DM homeopolar semi-
conductors with a strong applied homogeneous electric field.~ ~The
emission current is.very dependent on the field particularly~in
the region corresponding to the horizontal part of the semi-
conductor volt-&mp.charact,oriatic. . M.I.Yelinson and A,G,Zhdan
gave a reporton the emission of "hot" electrons from quartz
activated.by carbon. The authors had observed the emission of
"hot"..eloctrons from thin layers (approximately 5 microas) of
S102 + C, Aepending on.the voltage at the layer, the anode
voltage and temperature., A,L.Shustina communicated her
observations on self-maintained emission from nickel-based,
magnesium-oxide, cold-cathodes, The-emission was excited by eithev
visible light or, electron bombardment and was accompanied by a~
"iform.blue glow. The relation betwoen the current and the
collector potenti'al in expoinentialand the maxitntim current d nsity
wan -7 mA/CM2 . The',emission current iii relatively stable 0; fall
over a period of 8 hours). D.V.Zernov pointed out that self-
maintaining emission also occurs in films of'other materials,
e,g, M and borium anhydride. N.L.Tasnopollskiy, N.A.Karelina
and V.S.Malynheva reported on secondary emission under (primary
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ZOWE415
Inter-Inatitutional.Sominar ...
electron),Arradiation.of thin layers of magnesium oxide on a thin
aluminium.base (agpr oximat ely 406 it) with current density
approximatelyAo- A/cm2. Secondary ismission coefficients
=~7-5 -'8.5 wer.o.obtained*for.primairy electron energies
V' --3*5~- 4.'5 kV and of X~=9, when V w5kV onMSO,film
P ma
formed by activation of Mg in aire Stable values were.somewhat
lower.. In the report "Secondary Emission under (Primary Electron)
Irradiation from some Dielectrics,",M.M.Shefterl' communIcated-that
the maximum values of the secondary'emission coefficient Umax
werat forKC1 4,2 with' Vp = 3 kV; for NaCl 5.4 with Vp = 3,5
to 4 kV; for MSO 8 08 to 9.8 with V - 6 kV and current
densities - 10-9 A/CM2. The base-was- aluminium. It was stated
that a thin layer,of golcr between the Al and the dielectric led'to
anlincrease in, a The "outflight" angular distributi6n'of'
~secondary electrons did not conform to. a cosine law. A.Y&,Vyatskin
pointed out the necessity of careful separation of "true" secondary
electrons from reflected primary electrons. L.N*Dobretzov
the field'.of the charged spot can reduce 6 and
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9/109/60/005/010/028/031
Inter-Institutional: Seminar E033/9415
distort the angularldistribution of secondary electrons.
V.I.Fowina in the report "Investigation of.1ndUced Conductivity
of Some Chalcogenides of.Antimony" gave results obtained on thin
layers.of SbOS-K and,Sb For.Sb2S3, gain coefficients of
500 to 600 a;;d'"mu1tipf!:1t*y" coefficients of 100 to 200 were
,obtained. , For Sb2Se3 ,corresponding figures were 1500to 1700
and 2 to.3. The induced current depended on the exciting
current density by Iin = ajn where n varies from 0.5:to 1
at room temperature and abovt.9 The induced current also depends
on the.temperature in an exponential manner.
'Card

88164
S/109/60/005/011/013/oi4
o3) 11_?7 E032/E514
A
AUTHORS t Yelinson,~M.16
and
TITLE'l": Emission of Electrons from Thin SiO + C.Films on
2
~Tkxngsten
:PERIIODICALs Radiotekhnika,i~elektronikav 196o, vol.50 No"ll,
Ppo,,18621!_1865:
TEXT: emission of electrons-from thin carbon activated
quartz films on tungsten has been.investigated an a function of the
applied electric field. 'The thin quartz films and their aeltivation
were prepared by the method described by the present authorti in
Ref.6. The method is am follows. Tungsten-vires, bent into the
forms 'illustrated in FiS#lj were polished-electrolytically and were
in a tstraethyl silicati--~Apour. .at 11000C. The thickness
of the.quartz filmx,deposited in thim.way lay between 3 and 10 jL,
--:-.-depending on the duration of.the treatment. Next, the tungsten
wires.were placed in a methane atmosphere with a pressure of about
,.~10 mm Hg for 4 to 8 hours at 13000C. The second lead was in the
form of a platinum, tungsten or copper spiral winding on the quartz
film*,,. Measurements of theelectric field at the layer, the current
it and the emission current were carried out both under
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S/109/60/005R11'613/014
E032/E514
Cold Emission of Electrons from Thin SiO + C Films on Tungsten
2
static and pulsed conditions,and the duration of the pulses and
their repetition frequency.was,varied within wide limits. Figa*213
and~4~show.the experimentally obtained characteristics. Fig.2 shown
-,~.the dependence of the emission 'current i9 on the current through
th e film (or 11 the potential-difference across the film) at various
temperatures (curve 1 - 25*.C,,curve,2 - 12000C, curve 3 - 1350"C;
anode voltage U = 200 V). As can be seen,'the emission currbnt
a
increases very rapidly with increasing internal field in the
film.. It was found that for a given field at.the film, the
emissioncurrent is practically independentof the tEmperature.
An.appreciable emission begins at a-field of E -4 10k V/cm. Fig.3
:shows the emission current as a function of the anode voltage at
25"C,(for'currents through the film of'650 and 600 mAt respectively).
The absence of ~,Aaturation in these curves is noticeable,
F:Lg.4.s'hows aAypical volt-ampere characteristic of a quartz film.
Ohmis'JAw holds up to 5000 V/cm and beyond this point all the currents
are higherAhan those-predicted by Ohm's law. The emission in
stable in-time but is sensitive to fluctuations in the potential
Card.,2/3

20421
s/iog/60/005/012/019/035
E192/E382
P~00 00 o'
~,Sj,_and Vasillyev, G.P.
AUTHORSi Yelinflons MBIO's Z
-ent
TITLEs Interpretation of the Shape of Voltage-curi
Characteristics of the Field EmisBion in Semi-
conductors
PERIODICALs Radiotekhnika i elektronika, 196o, Vol. 5,
No. 12, ~.pp. 20011 - 2008
TEXT: ~..A typical voltage-current characteristic in Ig j
and . 1/E coordinates for metals is in the rorm of a straight
line for, a. wide range of currents i and voltages h
Such a charact.eristicis shown6in Fig. 1. However, at
~.current densities.. J >~ 71.x 10 A/cm a considerable
earity is observed. Thus, a c acter-
-deviation from the lin bar
istic bendalpears in the vicinity of the point A (Fig. 1)
which occur's at lower. j Further,, in the vicinity of -the
point B Ahe rate-of the current increase becomes greater
can be explained by
again.- The deviation at the point A
the effect of the space charge of the emitted electrons and
by the deviation of-the true form of the potential barrier
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20421
S/109/60/005/012/019/035
~E192/E382
-Interpretation of the 'Shape of V.oltage-current Characteristics
-of the Field Emission in Semiconductors
'S102 +C, and A126 3 C:were investigated in an earlier work.
(Ref. 2). It was~found that the possible reason for the
deviation of -these -,characteristics from linearity is the
influence,of,the-strong internal field in the semiconductor,
'which changes thedistribution function and the electron con-
:centration. The characteristics of SiC, Go and ZnS (taken
from Refs. 3, 44 and,5) are also shown. The peculiarity of
'~these three characteristics,is the deviation from linearity
at small currents... A new type of voltage-current characteristic
was discovered.. The materials used in the investigation were
semiconductors based ~on SiO and A1210 In order to make these
2 3
-.omittors conducting, SiO2 was activated with carbon and tungsten
'was added to
~Al 0 The. particular feature of these substances
VY
is their low electron affinity coefficient I eV (Ref.2).
Card'3
/6

20421
s/lo9/60/005/012/019/035
E192/E382
Interpretation.of the'Shape of Voltage-current Characterlstics,~
.,of the Field Emission in Semiconductors
The voltage-cur
rent characteristics of three emitters made
''from Sio2 + C is shown in F.1 g. 6.-1t is.seen that the
characteristics deviate from linearity at low currents
(see point G). These characteristics are novel in that the
.,:,bend at point 'G has nothing todo, with the barrier-produced
~by.the presence of the surface charges since this is overcome
~at~comparatively low electrie.fields. This is due to.the:
fact that emitters'have' a very high resistance and in the
investigated range,.of,currents they have considerable internal
fiel4q., Secondlyo the space-charge effect is insignificant
due to the fact that the emitted currents are very low,, In
,general, the characteristics of the type shown in Fig., 6
can be obtained at higher temperatures; in fact, at room
temperatures the.-characteristics are often rectilinear while
at higher temperatures they have the shape shown in Fig* .6o
Card

2040L
s/lo9/60/005/012/019/033
El JL92/E382

.,In
terpretatio'n* of tfie- 0 -current
Shapw~,or V Ita
ge

haratc
~teristics
--of the_.Field '
Emiss ii:~
io :-:in,Sem*iconductors ,
Tig. 11:11

i
6s c,
AV ljjl
10 w

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f.1 ~ir~ ,i.
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s/lo9/6l/oo6/oO4/023/0.25
q14301D OVS1 r/1 4L E140/E163
AUTH(jAS.::,,,.,~ZhdanA A.G., and Yelinson, M. I.
distribution of field emission electrons
from semiconductors
PERIODICALt7Radiotekhnika I elektronika, vol.6, No.4, 1961$
pp. 671-672::
TE)ff ~'This.note is.a continuation of previous work by
~Yelinson:and colleAgues (Refs, 11 2)0 on the.theoretical and
-experimental study of the influence of internal electric'fields
field emission. it was found earlier that the
emission in the presence of aninternal field is substantially
non-equilibrium. The apparatus used in the present study is
similar'to that of R.D. Young and E.W. MUller (Phys.Rev,s 19599
113, 1, 115). It,was,found.that the field emission of high-,
resistance semiconductors do.es in fact.have a non-equilibrium
character; at Internal fields of -the order of 104 V/cm there is
a substantial increase of electron temperature; with increase of
lattice temperature the rate,of increase of electron temperature
decreases; at large internal fields a substantial number of.
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3/109/61/006/006/016/016
D204/11303
CO-AUTHORS: Vikhlayevat R.P.10 Gortkovp V.A.g and Zhdan, A.G.
TITLE., Inter-dep6rtmental seminars ort .,athodeelectronioe
~(L8th Meeting)
'PERIODICAL: Radio'bekhnika I elektronikap v. 6, no. 61 1961,
1031 1032
-'he
TEXT: This is la report on' v 18-th me~lting of the mezhduvedomstven-
~nyy Seminar po Katodnoy'elektronike (Inter-departmental Seminar on
Cathode Electronics) held 'February 6~, 1961 at the Institut radio-
tekhniki i elektroniki (Institute of Radio 'Engineering and Blectro-
-nics) AS USSR. 10~papers were read. V.A.Grodko, B#N* Markarlyan, V..
S. Zolatarevsk.!y and I.M.-Rubanovich, in their paper "The Condi-
tions:oE Applicability'ofthe Richardson - Dushman. Equation in

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Inter-departmental seminar D204/D303
0 2
120.4,amp/cd-2 C)-I R the reflec*Aons determined by basic law
of thermodynamics.- A method, of dete
rmining the characteristics of
_,~such converter was suggeste.09 based,on~the application of existing
f materla's which,answer
on thermionic emiss'..on o
the requirements of the laws of ~thermodynazatos. L,,N. Dobretoov and
I.A. Rezgol,: who participated Jn. ~the discuaslon# pointed out sev-e-.
tion by the
rai~inacouraizies resulting mainly from the Interpreta
authors of quantity-A. G.V.- Stepariov. V.T,. Pokalvnvin and tl.T-
El J r -a -, !
presented the paper I'Vecuilarii.Les ox the B~nlssion ux noi
.D.1ecTrons from Spontaneous p -,n Junotions in SiO Crystals". The
author.s.have been observIng,the high current density emissions
from smallelze cuminescent points, at variove temperatures and va-
rious values,ol' back.blas applied to the junctioti. A aharp increase
of emission currerit and tendenoy of.saturation viere observed up to
the moment of the carrier avalanche effect. A sprayed coating of
BaO at. the junction surface~produces a large increase of the emis-
sion currento :I ,Y,,, Bronshteyn and B.IS. Fraymari read two papers:
"'The Inelastid Scattering.of Electrons and Secondary Electron
Emis-
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Inter-departmental seminar D204/D303
-sion from Thin Layers of Certain Metals and Semi-Conductors" and
The Influence of Work.Function on the Secondary Emission". In the
first workq the authors experimentally established all possible
presentations~of the 6- j.diagrame (where 6 and t - the slow and
fast.components respectively of the secondary emission) when depo-
siting one material oroo a base made from a different one. The
diagrams permit evaluation of the effectiveness S of prima-
0
ry.electrons penetrating in depth and of inelastically reflected
electrons.3 and algo of.the trajectories of slow truly 8econdary
electrons. The results were given for sprayed coating of Pb on Si
-and Al; 6f,Ti on Ag, Be.and Al; of Al on Fb and Ti; of S1 on Fb.
In their second work with the help of '8 - Q diagrams It was shown
.~.that.with,the change of 'the work function of the emitter and as a
result,'of absorption at its surface of foreign matter (Ca on Be
and, Ag; Ba on, Be and R; Be, 11, Ag on Ba; Be on Ca), the obaerved
-change in*the coefficient.of secondary emission depends basically
~,onlthe change in The values of 81~ So, and S were obtained for
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Inter-departmental seminar D204/D303
Ba and Ca and the role of.the "reflected" stream, in the generati-
:,-,.,on of.truly.secondary emission electrons, is now established. Yu.
~,G* Anikeyev and BQN.:Popov.read the paper "Secondary Emission of
Barium Oxide"; they measured the secondary emission of BaO under
Pulse voltages and with cathodes having a wide range of their para-
meters variation, sucli as the, pressure of 00, (from 10-8 to 10-5
mm Hg) and.exoess,of.barium in 'the cathode. the obtained absolute
value of the coefficient,of secondary emission was in good agree-
ment with'values obtained by other authors. At temperatures below
55000 this coefficient is.independent of T for all states of acti-
vity of.the cathode.,At.high temperatures the coefficient is inde-
pendent of T if the cathodes have low activation, rises exponenti-
ally'for medium act
Ivated cathodes and falls slightly if cathodes
..are,highly'activatedo-S.Ve Izmaylov presented a paper on "The
Theory of.Secondary Electron Emission"* He analyzed the influence
of,primary electrons, being reflected in the layer of the material
on the emission-of secondary electrons. Developing the assumptions
of D. Youker,the author succeeded in obtaining a more accurate
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S/109
Inter-departmental seminar D204/D303
analytical expressionfor the current ofeecondary emission else-
trons'&~ B.So-Parilis and P.M. Kishinevskiy read -two papers, "Energy
spectrum of Ion-Electron Emission" and "The Mechanism of Ion-Elec-
tron Emission and its Dependence on the Ion Velocity". In the
Sirst a mechanism of emission of excited electrons from the metal
was suggested which could explain theoretically the form of the
energy spectrum and evaluate the position of the maximum, its.half-
--width and the maximum energy of.eleotrones The emission of else-
invacuum is considered.as,a result of Auger recombination
of the conduction electron with a hole in the filled zone, formed
by collisione of ions With the atoms of metal, the probability of
Auger recombination being evaluated using,the wave functions of
Bloch. The authors gave a comparison of theoretical curves with
experimentally obtained data.,The second paper is a further,deve-
lopment of the mechanism of the kinetic ion-electron emission sug-
gested-eatlier by the authors, based or, a statistical analysis of
an inelastic colliaLon of the ion with the metal atomat accompanied
bya hole format-lon In -the filled band with a consequent Auger re-
Card 5/7

S110Y6110061006101610161
Inter-departmental seminar D204 D3 03
-combination with conduction*electron, which reduces to the emission
of*electron into the vacuum. The movement of the electron is analy-
zed:using the classi cIal method of -the Thomas-Fermi model. A formula
for'the coefficient y of ion-electron emission was obtainedt which
''determines thedependence~of y 'on the velocity (u) of the ion; the
authors also compared the theoretical curves y = f(u) with the ex-
..perimental data for different ions in W and Mor which proved to be
An good agreement. The paper on 'Nobility of Anti-Emitting Proper-
.,ties of Metals under the Influence of Carbon Dioxide" was presen-
ted by B.Ch. Dyubua.and B.N* Popov. The authors determined the
heat absorption of Ba at the surface of various metals. According
to the decrease of absorption the metals can be put in the follow-
ing sequencet~Rh,.Srj Ptp Rep Ito W, Til Hf, Zr. Experimental data
have been produced which confirm the theory. It has been establi-
shed 'that Zr has the-best.anti-emission properties.. It was shown
that both pure and coated Bap. Ti~ Zrand Hf possess increased emis-
aion stability under the action Of 02 as compared with W. The com-
,Position of gases in the experiments was controlled by meanslof a
Card 6/7

8/109/61/006/006/016/016
Inter-departmental seminar D204/D303
simple omegatron. In their.paper-Ye.8, Zhmudlp Ye.P. Ostapohenkot
!Asi,.~Pigner. and LV. Yudniskiyy "Oertain Physical Properties of
Complex Compounds, Based on Barium and Maximum Oxides" presented
the results of inveetigations'into the physioo-ohemical and thermo-
electric properties of systems based on oxides of barium raid of
-h.afnium taken in verious.molar proportions The systems were pre-
pared by ain.tering together the mixtures oi powdered raw materials.
The phase composition of samples having different molar ratios of
constituents was determined using x-ray analysis. As the result of
.their study.the authors discussed the presence of a chemical com-
pound of-BaHf03-
Cerd 7/7

B/109/62/007/004/010/018
D290/D302
rnolo
KUTHORS: Zhdan, AoG Yelisont III.I., and Sandomirskiyt V.-B.
TIME: Spectra of autoelectrons emitted fron,semiconductorz
PERIODICAL: Radiotekhnika i elektronikal v. 7, no. 4,. 1~)62v
670 686
TEXT': The energy spectra of autoolectrons,emitted froi,-, the scni-
conductor SiO ' + C viere measured in:detail for various autocurrent
2
densities and.emitter temperatures; the results are compared with
the current-voltage characteristics of -the emission, and with theo-
retical predictions that assume spherical energy surfaces~ and ap-
proximate electron temperatures. The present vrork vias carxrie~ff out
in order,to test a.theory of autoelectron emission that relate3 the
autocurrent density to the,average internal electric field in the
semiconductor, and hence to explain the experimental results at
high'autocurrent densities (previous theories are inadequate at att-
tocurrent densities of above about 500 - 1000 amp ./CM2); also, the
-s give information about the energy distribution of the e-ec-
result
Card 1/2

..............
9/109/62/007/004/010/018
Spectra of autoolectrons,emitted D290/D302
trons in a semiconductor.-The results show the non-equilibr-lui,,i na-
ture,of the emission-at hi'gh current densities.'The electron3 in
''the semico,nductor-are superheated by the strong internal field,
which increases as thelemisaion current density increases. In none
cases electrons with energies of about 10 eV are foiuid; -the co=lea_
-es ar - 15 OOOOK compared
ponding electron temporatu. e about 10,000
'ror
with equilibrium emitter temperatures ranging about 1600
OZ. The electron temperature decreases as the lattice temnel"a"E'u--a
increases. The autoelectrons have a Maxytellian energy distribution
at higher energies; therefore the energy distribution of t.ae elec-
trons in the semiconductor is probably also Maxwellian at t1ae3e
-energies. There are 18 figures,.2 tables and 11 references: 7 So-
viet-bloc and 4 non-Soviet-bloc. The references to the English-lan-
guage publications read as follows: R.D. Young, E-1J. Luile~r; Phyo.
Rev., 113, 1, 115, 1959; R*D. Youngy Physo Rev., 113, 1, 110, 1959;
R. Stratton# Proc, Physs.Soc. B, 1955, 68, 430, 746.
SIMM1ITTED: November 24t 1961
Card 2/2

V
L 17286-67, 3
A ST I ~C/ -&.~ D F
ACCESSION YR: AP30043S-
AUTHOR: Zhdan. A. G.
- - igmllmwu~
TITLE: Interdepartmental seminar on the physical fundamentals of cathoce-
electronics. 22nd Session (11-12 March 1963)
SOURCE: Radiotekhnika i elektronika, v. 8, no. 8. 1963, 1491-105
TOPIC TAGS: cathode electronics, seminar, physics seminar
ABS CT: Titles and annotations of 17 reports delivered at the S,tn-dnar n~re
TRA
briefl epor,00pld: (1) A. P. Komar and N. N. Syutkin, "Field emisaion frorn
agin -BAiloy"; (Z) A. P. Komar and-V. P. -Savchenko, "Fi,~ld !rni9q1vn !-,)T-n
9W
metal-like molecules and polymers of C, S:~~e _1;b Te. Bi"; (A) V. N. Shx
7 0 - -,-
and Ye. V. Taskayeva, "Field emission ff vii An -W " N) Yu. V. Zubez-~(o,
IfField emission from R4Pdoated with'Th"; (5) L. ~,161'skaya and N. V.
__ -iribution of elec
Milee,,h_kina, "Energy 4js twons in field emissior, from Ge Iavers
Card 1/3
f.

L 17 1 ~ ~ - t, z
ACCESSION NR: AP3004387 21-
on W1% (6) E._L. -Nagayev, "Electric current in a gas-filled diode with poteatUl
jumps near electrodea~',T7) N. A. Letunov and M. V. Gon1b-,(-,1_novt-., "Norelastic
reflection of electrons (8) A___M. Tyutzkov and T. .%. Turriart-va, -Var,.jttion of
coefficient of secondary electron emission of BeO inler f!14c!r-)n 'jambar(Irnent-;
_L,)3orisov "Pecu.1i.arities of the effect -)4.ler-iperalure on the coefficent
(9) V, f
of secondary electron emission from MgO films lf~ I' ) A.__Ye. lorish, B. Ya
Moyzhes, 0. V. Sorokin, and F. A. Chudn~`v_skiy, emz)era-~_re
a cathode oxide c tin ", (11) Be Ve F-Ippov, 'Mer' an:,3-n (1' -if-r-a'
- gf- g , -
in the aear-threh6ld region (12) B. V. ,New scherne of aego-p-ion
(13) Ye. A. Tishin, "Effect of _Sr ta~.,ne str_c,.ur-~,J)n r
metals"; (14) K. S. Beynar and B. P. Nkenov, Vcasur,.ng ~- w,)- f,_~rct--7 C1r
oxide - c oat e d ca thod e a b y t he c onta c t -,Do t e na..' e r,- n c e me i hod -. N.
_-YAjAopol'skiy a d N A Karelina, "Seconcarv-e:ec!i-on *hr0,jg,1 em-4Rg~,)l !--rn
Mgo treated i1Z9 valporlz, (16) of
emission characterl-stic4f Molt-er em_~tters P. Bonornorskiy anci A A.
--y-exesleni, "Some results of an experimental investigation of i,~condary-erraisior,
Card 213

L 17286-63
ACCFSSION XR: AP3004387
I MgO and KCI coatings. 11 The following specialists took part in discussions:
N. D, Morgulis, 0. F. Yasil'yav, V. N. Shishkin, A. A. Komar, A. R. Shullman,
A. 0. Naymovets, q,. N. Shuppe, V. R. Lepeshinska,La. )4_. L eli: ~son, 131. G.
Borz,yak, N. L lonov, L. N. Dobretsov, Yu. G.-Ptus-iin-skiy, L M. B-rony~tte-frn,
B. N. Popov, 13. Nikonov, 1. A. RSzg 1', D. V. Z!rnov, S. A. Fridrikhov, and
G. S. Kreynina. Orig. art. has: no figure, formula, or table.
ASSOCIATION: Distitut radiotakhrilki i elektroniki All SSSR (Iqstitute of Radio
Enizineerine and Electronics. AN SSSR)
SUBMITTED: 00
SUB CODE: PH
DATE ACQ: 20Aug63
NO REF SOV: 000
ENCL: 00
OTHER: 000

W411
L ')18127' 66:
t' 33- b)
IT in
)11506'!
ACCESSION NR! AP5020129 U0101.09165/01010061-1501
537-525-2+537.533,2.
al
C
AWHOji;, Telinsoh, M. ti Zhdarl' Udinteeva, 0. A., Mogunova, M., Ye. 7
TITLE: :Theritioni an field emisbiona from stannic oxide
SOLMCE:- -Radibtekhnika.i elektionikao v. 10 no.
8, 1965, l5oo-15o6
miibnid emission field emission, stannic oxide
TOPIC TAGS! thel
SMCT:--Thin- 0. 1"0'. 3 Y_
-AB polycrystalline-SnO2 films deposited on an:*opticall
'~artz-vere- gapYj*ct ,to~cdnstamt_~d pglsed (100 pps) voltages.:~A very
polis hed qua z
_.fiot;eii~tion- emisslon`- va -'obserlved --16v voltages, emunstrate
intense -at
g f-the dlectron -ga. 2_ Tbet
possibilitylof a otronj. ",6verhoAti 0 In tht 0 f ilvid'.
y st6 M a
'curve - .~ of film voltage va eniisiiidn current was typical of previouVI di ed __ e _L
lon _~g~stiemv- viz -,-th-e':emi'fo2si-on'~-c'u.-rr'ent' first ihi.-reased ralaidly and then tended to;
-he film is linear ~Yithln a wide
:saturatei Th6 currefit-~-voltage characteristic of".
range of volt'ages; -the durve ot emission plotted ,~.igainsb the film voltage bad its -
maximum at.:d:low voltage. A'o6ntrollable high-cUrrent-density stable field emisslob
from a Gn02 -film having a thin break -was observed at low voltageg. "Theauthors
wish to tha'n%:.V.:~B.'Sandomirskiy and Shi-M, Kogan for a unefol discussiot) of the
Lei li~ -1/

6
....... ...
ACCESSION'llRi:; AP5020129~
'
"
resuAs-and-also-T. Ai~ Lik
a_ozd,V. Ye,
bachev Filippov for their help iri the. e r
7pe

rhental vorX.' or
figures
0
~
ASSOCIATIM.' n n6'
0
t, 2.
Vay ENCL! 00 SUB CODE.

'6&i
n6
W ;::-Odl ATD PR SS

E
,
.

7,

77

360t- 67---EWT(M) Jkw~oj /ETI TJP(C)--D/-GD
,--A! OZ
A%A. NM AT6033657 SOURCE COON: UR/0000/66/000/000/038 /03 9
-AUTHOR.. Zhdan, A. G.; Abl~raa ov Z. Yelinson, M. I.; Chugunova, M. Ye.
~ORG: none
TIT LE Studies of thin-film field-effect, transistors based on CdS
SOURCE: Voprosy,plenochnoy elektroniki (Problem in thin f ilm electronics); abornik'.
st.atey-. Moscow, Izd-vo Sovetskoye:radio, 1966, 384-389
TOPIC TAGS: field effect transistor, thin film'circuit, volt ampere chaxacteriatic
'ABSTRACT: operating characteristics of thin film FET's were measured, with particular
interest in the effect of temperature extr*"s on tralisient response.. Samples were
:vacuum-deposited, and.consisted.of CdS-Al %6urces.and drains, with SiO(CaF,)Al gates.
Film thickness was from 2 to 5 mm; gate widths-were either 9 or 18 p. Response to
square wave pulses varied widely, depending on,both pulse length and differences in
the crystalline structure among samples. Fig. 1 shows the different responses to
pulses obtained from three samples. The action of "fast" and "slow" trapping
is descri-bed as.goveiming the.observed rise and decay effects. Temperature testa,
Card I
16.2

ACC NR: AP6027249 SOURCE CODE: UR/0.109/66/011/008/1536/1537
AUTHOR: Zhdan, A. G.; Sheftal~, R. N. 1 Chugunova, M. Yo.; Yelinson, M. Is
ORG: none
TITLE; Properties of cadmium-sulfide films produced by vacuum-ar. raying onto
directive backings
...SOURCE: Radiotekhnika iclektronika, v. 11, no. 8. 1966, 1536-1537
hin: fil m, cadmium sulfide
~;~.TOPIC TAGS: microelectronic t
ABSTRACT: C, A. Escoffery did not obtain high-quality single-crystal CdS films
apparently because of nonoptimal experimental conditions (Solid State Electronics,
..~-1963, 7, 1, 31). The present article, reports the successful prepar tion and
testing of CdS films sprayed onto muscovite flogopitc, NaCl, KCI, and 0~. -A~ ()a;,
'R. Zuleeg's method of spraying wag used (solid State Electronics, 1963, 7, 1, 31).
Cord J/z UDC: 539.zi6.2z:546.-,8'2z

A UTHOR: Zhdan, I.IT.p Engineer. SOV-135-58-11-131/21.

TITLE
t -in,Welding Low-Alloy 111OKhGN" and '109G2" Steel
Experience B
'
in Railroad Car Structures
(Opyt svarki vagonnykh metallo-
konstruktsiy iZLnizkolegirovannykh Stal ey 1OKbGN i OqG2)
Svarocbnoye.proizvodstvo, 1958, Nr 11, P 35 (USSR)
ABSTRACTJ In welding low- alloy structural steel grades (11lOXhGN11 and
11090") it'was necessary to find the proper electrode type
to, be used for welding on a.c. and to investigate the possi-
bility of using automatic welding with low-carbon rods under
"AN-34BA" Land 11OSTs-45" flux. Tests were performed:with
"TsIT-7S" and "U-5511 electro4teS of 4, 6 and 8 mm in.diameter.
The~composition of the-coating of "U-55" electrodes is given
(51.8% marble; 20.6% fluorite', 3-3/6 granite; 9.1% ferroman-
ganese; 901% ferrosilicon; ).3% potash; 2.8$ bentonite - 28L
silicate solution amounts to 28 to 30% of
of Lthe coating)v Automatic welding was carried
the weight
,
out under 1.10STs-45" and "AN-34BA" flux with low-carbon "Sv-
01811 rod.,The performed testo proved that "U-5511 electrodes can
be -successfully used in the welding (on &.a.) of 1109G2"and
111OKhON" steels and Lensure satisfactory mechanical and techno-
Card. 1/2 logical 'properties of the weld joints. Welding with the US e.of

C-- /2776/1
AUT110113: Guly4yov)_.A., P.; Undan, To A.
ORG: none
TITLE. Investigation of the j9pgrtios of stool 001,666112T
SOME: Moscow* Toontralinyy nauchno-dsslodovatol'pkiy institut chornoy motallurgiio
Sbornik trudov,,no. 46, 1966. Spotsiallayyo stali i.bplavy.(~pocial stool$ and
allo 67-75
YS
TOPIC T AGS alloy stool., nickel stool,,, chromium- st6eij 'Steel OKhlbGBN2T stool
ABSTRACT: The effect of Cr M stru6t *'o and properties of.stoel
and Nion the ur
O.Khl8C8N2T was invostigaE;d'. Two specimens were stb.dicd, representing the forrito
and austonite region limits in the stool, respoctivblyi The investigation supplements
the results af A. P. Gulyayev and T.. A. Zhadan - (5b.'.tr%idoy'TqN11CW%, Spetsial I nyyo
1 0 '~ The phase composit
stal' i splavy, vyp. 39, Izd. Motallurgiya,, 1965, s.'l 9). ion)
the usual mechanical proportieup and tho magnetic; saturdtion of the stool were
dotermined,as a function of the thermal treatment arkd.dogroo of doformation of the
latter. The experimental results are presented gra'hically (see Fig. 1). It was
P
found that the mechanical properties of the stool were almost independent of -the
phase composition in the composition range of 25--30% -0/yphaso. Embrittlemont
Card 1/2

111,11i11"

I
I
i
41~1
. 1 #4
t I i" . -r
I .. ~ 1 0
. U