SCIENTIFIC ABSTRACT ZHERVE, G.K. - ZHESTYANIKOV, V.M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002064720010-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 20, 2001
• Sequence Number: 10
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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ACC NRi AP7003658 S OU-MCE'-CODE: F= -UR/ 667-9-r6-6 [03WGV-14447/1447=~:~=
'anik,
AUTFO-it: 1. B. Z1 0 _V-! Pellcharp T.
ORG: 7.1,edical Academy,, Krakotr
TITa': Investigation of -cyclotriphosphazatriene deriyativos. f. Synthesis of
sone thiolmido derivatives of cyclotriphosphazatriono
SOUX94 Zhurnal obshchoy,khimH-V-.-!6,' 14'44-1447
:1 'LOPIC ZWS: organic sulfur compound, organic synthetic process, organic
phosphorus compound
ABSTRACT: A series 'of thioimi.do d6rivative3 of cyclotriphosphaiatrIone wora
wynthasized by- the reactions of hexachlorocyclo-Lripho:;phazatriono with thioamidesp
such as thiourea, 4-thioamido-3-antipyrino, dithiooxarldo., and thiosemicarbazido.
The final structure of the compounds formed dependod on the secondarf reactions
of cyclization. Two of the derivatives gave colored precipitates with,.-' on pf
_eR#-4,-an4.aq-qqous_a=onia solutions.'
eavymotals from acid,_n
Orig. art. hast 11 table. CJPRS: 38,91707
SUB CODEs 07 SUBM DATEs' 21.Tul65 ORIG REP: 001 OTH REF: 012
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ZHAROV) Me; DUBININO N.P,,j, doktor tekhn, nauk) prof.~
retsenzentj POLOVINKINp P,.I.p dots.$ retsenzentj
CHMNIN, E.A., inzh,.j, retsenzentj ZHESTNOVA,I.N. j, inah., red.
(Automation of certain foundr7 processes) Avtomatiza-
taiia nekotorykh litainykh protsessov. Moskva, Mashino-
1964. 278 Ps (MIRA 18il)
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KNYAZYUKI L.V.; POROYKOV$ I.V,, doktor tokhr.. nauk, prof.$
retsenzent; ZHMKCVA, I.N., inzh., rod,
(Radiography of cautingul Rentganograrila otlivok. M&--
skva, Mashinostroenie.. 1965. 95 P. (MIRA l8s3)

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ZHZSTIM, V.A. Inshener.
Standards for general-puToes trailers, sooltrallers and two-whsel.
trailers. Standartizatalia. no.1:33-35 ja-Ye 156. (HLRA 9t2)
I.Glavny7 konstruktor sytopritespnogo savoda.
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7;iCC-~7NRi--AVbGl8iT (AIN) SOURCE CODE! UR/0326 /1017AM
AUTHOR: Mblotkovskiy, Yu. G.;
jestkov
_
ORG. Institute of Plant Physiology im., K. A. TimiryazevAN =R, Moncow (Institut
tenly-Ay -oss
fiz,iobTgir-ras
TITLE:, Morpholoiical and functional modifications or loolated !:hloroplacts induced
by oleate.~..

SOURCEf Piz-ioiogiya iasteniy -"v*- 12 noi.6,'1965, 1017-1023
A
'
-TOPIC TAGSi chlorophyll* plaht
rganielphosphorus.
0
o gy oleic acid, protein,
phypi
.
compound, .-Olant --chemist
ry
Inveatigation-_'vere,condu 0 aAni'mino the effect of unnaturated.
ABSTRACT.-.
fatty ao~d6p Such 0. 01"te, o a morph.olo&y and, photocha-aical activity of
'
-
`
iS63~t~A
ch
broAdbcan ViciA faba - which contain,:
loropltst~i Leaves of tho

oioaagtd, "capable- 6'f , photophosphor7litio activity were used in the
large~.chl
'
'
experiment a.-, The
planto were:grown
in a ereonhouao supplied ifith supplemental
i
'ill~mi~atio~n
by fluo res aunt' lam
_
'
i
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[ p9.'. The chloroplasts were isolated from the
'
nte -after 10-14
r6wth by tfieArnon method.
The residue obtained
days of
p1 a
g
twasouspended in,~ a medium which was kept on ice as the initial material
The standard'incubation medium for the Hill reaction tonuioted of 0.025
-molar tri buffer pH 7&8; -3 micivmoiar ferricyanidel a suspension of chlorn- ~i
plast containing 0.06'. 6-oq.milligrams,of chlorophyllo The reaction YtAc
induced by the exposure of the, incubation zedlum to 42p50
0 lux for a poriod
~of 10 minutes, The e*perimental part of the investigations eougA to estab-

ZHESTKOVAO TJ~j
Fortrdng 1(:e horizons, in the, sadimento froo9zing accoiding to
epigenetic type, Vest* Mook. un. Ser. 4; Geol, 19 no.4t59-65
Jl-Ap, (MIRA 17-.11)
lo Kared.ra merzlotcvadonlya Mooko-rakogo univer-aiteta.

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78099
SOV//70-5.71-8/30
AUTHOAS- Kolontsov
al YeI.V.P Zheatovskaya, M. 1,

TIME:- Effect of.Neutron~Bombardment
on Structure of Lithium
Fluoride C stals
ry
PIERIODICAL: Kristallografiya,1.1960, Vol 5, Nr 1, DP 56-62 (USSR)
'ABSTRACT: The exposure.of crystals to neutron radiation has,~
-beenknown to,*.' (1) produce defects such as lattice
vacancies, interstitial atoms
, and "thermal zones".
.
(2) alU~ the solid state structure due to.local rise
of temperature; (31 melt and recrystallize certain
regions of crystals, The authors studied the -first
group of effectsbyselective etching, and analyzing
_Wthe diffuse scattering of X-rays, LiP was selected
because of its low heat conductivity, hIgK trans-
parency to,X-rays, and the presence of well known
methods and agents of etching. I-Tarrow beams of
,.Card 1/~ limited range of wavelengths permitted the deter-

Effect of Neu tron Bombardment on Structure
:ofathium Fluoride Cryatals
-lented reglons and the IntenlAty
inination of dl3ox k,
-hin atte a
distribution wi the difl'use z3 c, ring maxim,
al -jitli one of
The. cryst, 0 were placed In the camer- t
the 100] Lparallel to the incident beam , and two
others to the vertica JL and horizontal axes of the
camera The intensiUes of scattered Pays., de Veloped
before and after the exposure of crystals to neutron
radiation C ou ld be compared using the diffractiona.
from aNI-wire, placed just before the crystals,
as a scale. The expocure to neutron radlat"Lon of
17 2
T-8 10 '.. neutron/cm intt,,nsity produced wealc
diffraction arc3, around some diffraction spots but
did not change th~e scatrerIng reglon3.: The Increase
18
of tile Intensity of' neutron radlation to 2.2 - 10
2
neutron/cm, L increa ed the number of diffractions
along concentric rings; and produced irreE;ularly
Card 2/5 distributed new spots andanomalous. diffract-Ion lines,

ort StructLire 78099
of Lithium Fluoride Crystals kv/70-5-1 -8/30
trending from the pattern center to diffraction spots
of (20.0 )-type. Further increased intensity of neutron
beams, to 5 ~ 10 18 neutron/cm2 made the additional
diffracticiis even more diffuse and caused their.
coalescence; the anomalous diffraction linee,became Very
complicated; the intensity of some diffractions
increased while that of others decreased; the crystals
became parted Into slightly disoriented blocks, 0,1
to laacross Etching of crystals before and after the
expTsure to neutron radiation confirmed the conclusions
based on the analysis. of diffuse scattering. Unexposed
crystals showed etch figures repeating the,dislocation
pattern, while exposed crystals got-rough surfaces due to
numerous uniformly dis.tributed pits of irregular form.
Within this uniformly etched surface, especially at its
margins, there appeared equlaxial areas with deeper
pits, and elongated areas parallel to Elod , with
rectangular pits.. The depth and extens on o' pits
Card 3/5 as well as of the areas with deepev and rectangular
1j,

om-S-tructure
78099
of Lithium Fluorlde.Crystals SOIV/70-5-11-8/30
pits increases with the Intensity increase of neutrorl
radiation. The equiaxial areas with deeper pits sqem to
represent disoriented blocks, while the rectangular
pits are likely to develop on dislocation3 decorated
with the gasesxof decomposition. Etching or crystals,
layer after layer., disclosed that the effects of neutron
bombardment. decrease with the depth At a certain depth
(about 0.1 mm)., depending on the Intendity of neutron
radiation, first the irregularly shaped pits, then the
deeper pits, and finally the rectangular pits disappear
completely. This surface layer, called fragmentation
layer, crumbles within the equiaxial areas easily
permits etching of the underlying surface whose
etch figures resemble those on.the crystal before
being exposed to neutron radiation. The authors believe
that anomalous diffraction lines do not result from
composition changes due to Ll segregation, as assumed
by A. Guinier and.M. Dambert., but from the distribution
of defects along the directions of' weakest bonds
Card ~Ieavage in th,~ Uame (100) d1ve-OtIon) wille,11 becotile w1en

L-L t h i
w e a. k te r w 11 e X 0 ;?,-t' t
break ea,sl.ly when L, t,'t 1).1 C e
I.Dllere ar, 9 flguri-~.,-; ;--nJ i-1~3f;2r~ enxes 5 Soviet

FrenCh, Da n 4.
-he ,
U.5~ r e e n c e --, ;~'(r -

J. J. Gilman,
W. -c Ii r, -s t o n ,3~ Id. S.LearE, Appl
Z17, jGj1'-P- T 'I
Phys 29, 5,, 7
'F~hys q
J,~ App! 7
Fi
J Appl
11)1:,7;
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9 95

LASSOCIATION.
Moscow 3tate U-niver'sity Im..' -.1
er
v 1~ 1-1,:) e1 k c. Ni s k ly
~gosudar. "Vemyy e t. 1,Tler!" j "I L
'rED-
SUBMITI
une C
j 2, 1959

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'ACCESSION NRI AP4015092 205/64/004/001/009~/03.01
--l" _13t
TITLE: Development 'of.elongated forms of Be cell during oultivation
under,continuous gamna-irradiation
it 19641 96-101
SQURGE.:1 Radiobiologiya,, Iv.W PO
TG~.IC TAGS:','E. coli cultivation, continuous gamma-Irradiationg
-it*reased radioresibtandeg S-shaped dose-effect curve, E. coli
e;~bngated formp subbaoteriostatic actionp erythromycin concentration,,
-'a'high temperature,, cell division:inhibitiong first po,53agO
This work-is largely based on literature sources which
indicate that prolonged cultivation-of E. coli B,, B/r., and K 12 under
~1, continuous gamma-irradiation at.low doserates increases their
-radioresistance and produces S-shaped dose-offect.curves for many of
the gamma-resistant'variants., The author assumes that this Increased
radioresistance may be related to morphologiedl changes of culture
.propertiesq particularly the developmont of elongated forms of Et coli
Bp and,thon proceeds to determine the validity of such an assumption.
Card
/3

ACCkSSION NR: AP4015092
First the morphology of E. coli gamma R strains were studied with a
Phase contact device and the use of dyess Then, to induce elongated
forms,of.bacterias E. coli B strains were cultivated under the
subbaoteriostatio effect of concentrated erythromycin (25-30 ;kgba)
or of 46OG temperature for 18 hrs. Radioresistance of tho variants
was determined according to methods described in a 1953 study by the
-same author. E. coli B cultivated under the subbacteriostatic effects
of erythromycin or 460C temperature produces elongated forms# increas-
es its radioresiatanoe# and has S-shaped doae-effeet curves. These
changes-are similar to those produced by continuous gamma-irradiation
and disappear after the first passage without the inducing factor
action*- Radiation in sublethal doses and nonradiation factors
(erythromycin and 4600-tomperature) have the capacitT to inhibit the
division of cells without affooting their qrowthp which apparently
contributes to increased radioresistanoop development of elongated
forms,, and to S-shaped'dose-offect curves, Orig, art, has: 2 tables
and 2 figures,
ASSOCIATION: 1nstitut tsitologii AN SSSRj,-Loningrad (Cytology
Institute AN SSSR)
Card 2/3

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AHWOVA) Zh.I.,, kand. -red* nauk; ANICHKOV, S.V., prof.; BELROM, M.L..,
Prof.;, VALI.DFIRI, AN., doktor mod. nauk; VEDLISWEVA, Z.1., kand.
med. nauk; VINOGWOV, V.M., kand. med. nauk; GERSILMOVICH, it. L.
k=d. med. nauk,- GINETSIIISXJY, A.G.v prof.; GORBOVITSMY, S.Ye.,
prof.; GREEMIKINAP M.A.,dotsent; GREKH, I.F., dots.; DRUSENKO.,
P.P., kand. med,.Inauk~ D'YACJEEVXO,P.K.,, kand. mod. nauk; 2-WITIUNIKOV
V.D., kand. med.-nauk; ZAUGOLINIKGV S.D., prof.; ZEYKALI, E.V. an
Md. nauk; ISKAREV2 ILA.., kand. med. nauk; KARASIK., V.14., profol
KMWI, O.Ya,,, -kand.- mod. nauk; KOZLOVp O.D., kand. med. nauk; KROTOV.,
A.I., doktor voter. nauk; HDRIN, A.H., doktor med. nauk; IAZUEVN.V.P
prof.; LAIMI.-I.P., kand, med. ruiuk; MLINIKOVA, V.F., prof.;
K.A.p prof,; IIII01ELISOR, R.Ya., prof.; 1AGSHKOV5KIYp
Sh.D.j profo;,PADEYSKAYA, U.N... kand. mod. nauk; PAHIBOK, V,P,$ Prof.;
'PERSHIII, O.N,,, prof PLARL'YESp Kh.Kh.., prof.1 POMM., G.A
prof.j POSKALWO, A.N,p kand. mea. nauk; MUKRIN, Ye.A.p Slots.;
ROZOVSKAYAY Yo.S.p dots.; RYBOLOVILV, R.S., starshiy nauchnyy sotr,;
R.R., kand. biol. nank;
SALMON, L.S.,, kand. med. nauk; SAFRAZBEKYA14)
TIU140V I L.A.,, ka~d. med, nauk; TOMILINA, T.11.# dots.; FELISTOVIGHp
'YENTOV N.K.# kand. mod* nauk; KHAUNIIIA,
G.I.9 kand, mod. nauk; FRb
R.Ae.. kand. med* nauk,- TSYGANOV., S.V., prof.[deceasedlj CHERKES) A.101
prof,,;
(Continued on next card)

iA-
Voicin" IdWwft ru Sr"I"ty of Cral
Tocidlay Afterrwmis Session D-4-1 (Corild.)
-Rays
Stsidloreshlance of DeArfirkla, roll Oriented under Conth am AtIless of j,
V. D. Onlysiditav
q
12) st;o" an nutrient
Hadigresistance of three strah" of EwWckk raft (S. 8jr and K agir urukr continuous
"Co r1rradiation (Initial dos" are 22(b r WHI 530 024 hr) Increases during It months ("r-rclitl3rit" strains).
Ra-Poreslitfince wits detetmined from survival curvet obtained from YlAble counts on bacterbi iu%pcmions I.,%
water after X-irmd2aflom Survival curves for nurricrous varkties of each strain were (f sismold character Joe to
'~.hibillorf of .11 division), After 5 r-MU9CS Of "p-MIStAnt" b.Werin without y-irr3diAti
tionptcd bacteria on. i
survival curves became exponentl3l spin. though the radior:1102rice ofilrain 1) tirmined higher.
he siSmaid character afeurvivif curves
Increase oftaillortsistance, formation oftlonjate4 bacterial formst, and t
were also observed when E rish B wereculturod in the presence ofsub~4saclerfostsficconovursiiom oftrythroniyclis
at 4S'C De above changes, similar to those induced by the prolonged action or y-mys, disappeired once ont:
Pass* without the iniluemeortheinducintsizent.
L E%yeriments on beat reactivation stiow that F. eoft 8 grown at 4S*C becanto reactivated ancrX.IrradiAtIon: the
t survival curve was higher than at 37C The ratio isas reverted for.111r. For "y-reilslant- E. coil 8 and 111r. culture
t at 3r or 4r-47'C yielded no tratked 4 Ifterences In the survival Curve&
Increased todionvalitance a(Ledist a result o(V-InsjIsik-.s 0% wlection orthe most
tislaunt IndiviJuals In licteriteencow "jisilons o(bachrris, It to not Improbtsbais that this Ph"Kinveneft to P'Caded
by the swearance of radisifirshiant mutatits.
%
r
fta TAU. C*Sawes Of PAdUtUn leiewab,

IL
ACCPZSXOII HH: AP4001909 S/0205/63/003/006/0809/0834,
shtoyno 'Al'; Z6a a
AIMIOR: Val d E P, tyeAlkovo V, D,
ITLE't Rostoration~of Esc r ohia coli B. after irr' iation under
-,T ad
Narious conditiorms, (in air, iA,nitrog.en# and in nitrogqn in the.
precence:of cysteamino
j
SOMICE:: Radiobiolo ~r :no.
6,1 1963.- 809-834
~TOPICVAGS:: lethal doso.curve
bacterial cultures, postirradiation
-bacteria restoration
ABSTRACT: Escherichia coli B M:coll B) were X-irradiated with
doses ran
J~- ding from-3 to.24~krail (RUM-al unit., 200 kvq 20 map focal,
length 70 mm no filter -10010 i-ad/min) In air# nitro fi and nitrogen
910
in the presence of eystoodne. Then irradiated E. coli B'ware,.
incubated In different-oulturol;m'odiums at 190P 37'.. and 450
C for
20-48 hro. Restoration volumeLindictiting the number of.rostored 68133
'j, compared to the number of damaged cells served as an index for a
given radiation doze,. A comparison ot restoration volizmes for:E,
coll B irradiated under different conditions but cultitated in the
same cultures shows that the restoration volume is lowest for E coli
Card
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---4T

ACCESSION IM: A001914 S102051631003 V6647/6%4_7
AUTHOH: Zhostyanijcovj,~ V, D,
TITLE:, Hadioresistanco of Eache richia. coli cultivated under
continuous Gamma'ir:radiation
01 no,,' 61963# 847-854,
SOURCE: Radiobiologiyap:.ve
TOPIC TAGS: Gan1ma irradiation,,-bokatoria radioresistance, Eacherichia
:cali radioresistance
ABSITRACT: Throe strains of,Escherichia'coli (B,, B/r (Carnegie) and
K 12) were cultivated for.22 'moo undor.c'ontinuous gamma irradiation
-with,'daily starting dos'os of 2260 and 550 r. Each of the 3 resulting
variants was placed in a Petrie cup with a hutritive modium and was.
:gamma, irradiated for,24 hrs at 3700 to dotormine survival rate by
-number of macrocolonies. Radioresistanco of the bacteria variants
was investigatod.aftor 424 hrs and 1p 2j 8-22 moo by grmring cultures
,in a test tube dirootly undor-X-irradiation (RU11-11 unit.* 180 kv,,
20 ma, focal length 50 mmp no:filter) for 18 hrs, Survival dose
curves were used as indices, Hadioresistance of all throe variants
is higher than that.of the-initial strains with tho most marked
.Coed: 1/2
7

;'ACCESSION' HM
ncrease:iw the tZ,!-coli B variant The-three initial strains are
chara- oteriied - lai-gely by exponential doze ourves.and the variants are
characterized,. largely by 5-4haped. curves.:, In- populations of 'variants,.'.
zooids are. f ound whose radioresistance,doos-not differ from that Gf
initial..'eulturess indicating that radioresistance changes do not.
take, place -'at:*the same time in'a population. Basically the selection
-is oo iderad responsibl
of preexiating or itAuded:miitants, n3 afor
~--, -,.-:,.increased radioresistance of,E, ooli oultivatad,under continuous
irradiationi ~"The-author expresses gratitude to V, P, Paribok
gama.
for. attention mid -interest in,- the work and to Ye. Ye. Nranoperova
and No Ye, Titoval laboratory technicians, for their assistance,
'figuresq 2 tables*
Or ig. art. has:
ASSOCIATION: ~!rzistitut-:taftologii'AN SSSR,, Laningrad:(Cytology
it 0 AN SS
nst Ut SR
I
0UBXMTW;'- 220ot62 IMIM AC EX(;Lt 00,
4: 13D0663
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ACC-NR:-AP7006775~~--~-----:--.
--_SOURCE CODE; --.XM/905316T/009/001-/0003~~020--
-AUTHOR: Valldshteyn Z~_AovZheet ani v- n--
ORG:. Laboratory or. Radiation Cytology, Institute of Cytology, AN SSSRo
Leningrad (Laborat.oriya radiatalohnoy tsitologil Instituta, toitologii
~IAN SSSR)
TITLE: Molecular mdchanismiof.cell -reparation from radiation injuries
SOURCE: Tsitoiogiya--~ zq no 1 1967, -,3-
W
TOPIC TAGSt radiation;~A=,~'.~erf 6et radiation biologic effect,
UV radiation,
Th
~CT Th luthor..review,s-.-some,contpmporary,con6epti 6f,the-mechaniams of
cellular recovery f ron , radiation-induced, ini4ries. -This comprehensive
article Is divided Into--- th
a following sectional 1) molecular nature
of injuries caused by,.UV radiation; 2) photoreactivation; 3) dark
recovery;.:4) i1olecular:mccbanism of dark recovery; 5) specificity of
the msihanism of da*rk recovery; .6) biological role of radiation re-
covsry~ ~ It. Is, felt that DNA. reparation after radiation injury takes
place via photoreactivation and dark.recovorye During photoreactivationg
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30362,
S/2 1/001/004/021/032
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.:i AUTHORt
TITLE: Resistance to radioactivity of Emcherichia. Coll
resistant to antibiotics
FERIODICALs Radiobiologiyap ve lp noo 4, 1961, 573t579
TEM The'aim of the work was to study the resistance to radio-
activity of strains of EsPherichia, coli which were resistant to anti-
biotics of various classes. The toots were carried out 'with 3 strains
of Be Coll DP D/r and X12v Strains resistant to penicillin, levonycetins
streptomycin, crycin, terramycin and rythromycin were obtained by pan-
nag an increasing concentration
e on a meat-pepton* broth (yH 7.3) with
of the particular antibiotic.*Tery 48 - 72 hourso The bacteria were
suspended in tap water and irradiated with an PYM-11 (MR-11) apparatus
at an intensity of 1800 r1min.indoses ranging from 6.4 to.64 kre
survival rate of the cultures.was determined from the number of Col onion
which formed, expressed an a traction of the colonies which formed in
Card 1/3

3o362
S/205J61/001/004/091/039
Resistance, to radioactivityst*. D298/D303
the non-irradiated control samples.. It was found that the changes in
the resistance to radiation depended on the individual features of the
strain. In E. coli B which w" resistant to penicillinf resistance do-
creased after irradiation. In E. coli B strains resistant to erythro-
mycinp mycerin and terramycint the resistanco to radioactivity wax in-,
creased after irradiation. In E, coli B strains resistant to levomycetin
and streptomycin, no change in the resistance to radioactivity-as COM_
pared with the original strain-was noted. Strains of E. coli B/r resis-
tant to penicillin lowered their resistance after Irradiationp while Z.
coli B/r strains resistant to mycerin increased their resistance. No
chan _go was noted In the Zo . e1011. B/r trains resistant to the other anti-
OT
biotic&o Ze coli E12 strains resistant to the 6 antibiotics showed no
change in resistance to radiation after Irradiation. The authorvas
assisted in his work by V, P. Parlbok, K. 1. Pravdina and No As,
Tolokontsev. There are 5 figureng 3 tables and 24 referencens 8 Soviet-
bloc and 16 non-Soviet-bloc. The 4 most recent references to the
English-langutage publications read as follovas To So Matney~ Do M*
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IAb-sorption, distribution and.excretion of antibiotic 26/1. Eksp. -
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AUTHOR., Lheatyau"*v, and
TITLE: On the operation of vacuum 2tolp,"IlAat reduced voltage
PERIODICAL: Izv. Vuz., Priborostroyetiyo, v. VA. no. 2. 196,1, 9-11
qtoceilz re Mpcr*3n*
little attOntJO-_ '%~S i~-~7 'D
:h,- aut!~ors con,,~id.i: -.;.- -`z.-~, ~f
circuit 6u--:,Yi-ng the lam;~ illurninating '-,e All
+ ?~2 Uid
ia obtained for the volt-ampere characteristic of an antimony-ce3lum photocell
in the region of reduced voltage. Here I je is the photo current in wt, U 6 is the
photocell voltage In v, 0 a const is the 'light flux in lumeas, a-ad ?-' are
2
Card 1/2
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L 131-13-63
On the operation of vacw= photocel1s... S/1146/63/006/002/~KWr)10
coefficients characterizing the light source &nd the sensitivity .-,f the Photace'.'I.
Analysis of the experimental results using the theory of orrors y~al!!; equation
linking the deviation of the photo current Al 6- with t1le porcent.;-,o i-?vlatioas ~1)'
the photocell voltage 8Ug % and the laump voltage It. rhe most. genera! of
equations reads: &I ~ a C1,S U,6 %+ 2' M %U% I
where m a 3.61 for a tungsten filament. 7his equation is most accurate for
U0 - 10-300 v aad for variations in the larnp volta~~e of - 10r.. -~'he ~ni~thod :an
also be applied to non-vacuum photocells. There is I figure.
ASSOCIATION: Lesotekhaicheakaya akademiya im. J. M. Kirov&
eering AcadeEg imeni S. R, Kirlov~
SUBMITTED: March 30, 1962
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Handbook on-Electridal Engineering (Cont.) SOV/5058
-.Arcing Contacts 1. F. Melashenko)
Ch. XZX, Cermet Electric
1. .
Genbral Information 245
2. Manufacturing processes 246
3. Structure of,csTmet compositions:, 248
4. Pro e'tI
p r es :'of cermet, contacts 250
5. Application of cermet contacts
Ch. XX. Soldering Materials (Z. F. Vorobey)
I . Soldering 2g9
2.- Solders 0
3. Yluxes 265
Ch. XX1. Electrical Carbon and Products Made of Carbon
IV. M.- Zhestyanikoyl

.1 l

Ge era 157-ormation 7
n
26

2
2 Raw materials 26
3: Electrical res
lotors'containlng carbon 268
4. ..,, ,
Carbon electrodes (for furnaces and electrochemical
indu.strial,production) 284

Handbook onElectrie'al Engineering (Cont.) SOV/5058
5. Carbwelectrodei6for welding 289
6. Carbon.electrades-,.for.illumination 290
7. Carbon electrodes for galvanic cells 294
8. Carbon products for communications equipment 295
Electrica1carbon products (for electric vacuum
and gas-d1scharge devices),.
1O.I.Brushed for electric:machinery 300
11. Miscellaneous carbon products 314
Bibliography to Part.11 (94 references% 64 Soviet 23
Xnglishp 5 German, 1 Czech, and I French) 317
PART III. SEMICONDUCTOR KATERIALSAND PRODUCTS
Ch.,MIL -Basic Information an Semiconductors (V.V. Pasynkov)
1 ''Introduction., 319
24 Ideas onthe mechanism of electric conductivity 320

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I-), I IMF -If
9(2) PHASE I BOOK EXPLOITATION SOV/1323
Zhestyaniko dimIr Mikh lovioh and Peter Avenirovich
enskiy
Tekhnologiya i oborudovaniye proizvodstva detaley i uzlov'radio-,
(Production Me,t.hods and Equipment
Employed in the Manufaoture of Radio Parts and Units) Moscow,,
Oborongiz,-,1958- 251 P- ll..000.copies printed.
Reviewer: Kalita, Ye..:D.1, Engineerl Ed.: Blaut-Blacheva, V.I.,
'Engineer; Ed. of Publishing House: Sheynfaun, Ld'l.;
Tech. Ed.: Zudakin, I.M.; Managing Ed.; Sokolov, A.I.J.
Engineer.
textbook for aviation and
2 NO ~
~gezonduT Sehoo2B DT i~bb at
&~Lthora daaar:Cbe dre g2swWv
Cessen and explain the vroae8aaa DT SvTS1vS> casting, WelcrYng,

Production Methodsand Equipment (Conto) SOV/1323
brazing, soldering and moisture-proofing. They describe the
manufacture of capacitors, resistors, transformers.. chokes,
switches, waveguides and delay lines made of plastic and
ceramic materials., Equipment used in the manufacture of these
parts-is also described.
The authors claim that,until-now the Soviet technical
literature has not made available a textbook for tekhnikums
covering the subject of production processes involved in the
manufacture of radio parts. They state that the present book
was written to fill this gap.
Chapters IX and XII'and the larger part of paragraph 8.3 were
written by Engineer A.G.. Rabinovich.
The authors thank Engineers Ye. D. Kalita, V.I. Venglinskiy
and B. Ye. Chertok for technical advice and Engineer
V.I. Blaut-Blacheva for help In editing. There are 21 references,
all are Soviet.
Card 2/8

.production Methods and Equipment (Cont.) SOV/1323
TABLE OF CONTENTS;
~Foreword 3
Introduction
ch. I. Organization of. the Plant, Planning of Pi~o-
duction.Procesaes,-:Teohnologioal,Documentation 7
1. Organ
ization
of-the.plant for the manufacture of
.
l
radio parts:and units.
2. -~'Definitions,of basic Inanufaoturing processes
3,p Types of.prbduction 9-
4. Technical preparation for production 10
5. Vechnologicaldocumentation 16
Ch. 2. Preparatory Forging Operations., Castingj, Heat
Treatment.,Brazing, Soldering and Rolling 19
1. Preparatory forging operations and preparation
of sheet and bar stock 19
Card 3/8-

- 'A
~ llit~ 1'"'
A
Production Methods.and Equipment (Cont.) SOV/1323
2. Manufacture of paAs by casting 26
3. Heat treatment of metal parts 28
A. Brazing and soldering of metal parts* Cold rolling 31
Ch. 3. Moisture-proofing Operations 36.
1. .General information 36
Drying process beforeAmpregnation 37
3. -Impregnation of radio parts 41
Coating with varnishes and compounds 45
5. Production of,water-repellent films using
silico-organie-pompounds ("hydrophobization"), 48
Ch. 4. Manufacture,of Plastio,Parts 49
l.' Press-f6rming' of thermosetting.plastics 0
2. Compression molding of plastics
3. Bondingvelding,, machining and stamping 64
Manufacture
of fluorine plastic parts 74
5. l
Matallization of plastic parts 76
C
h. 5.
Manufacture of Ceramic Parts
78
1. Preparation-of materials 79
Card 4/8

Production Methods and Equipment (Cont-) SOV/1323
2. Forming'the material,into the part .84
3. Firing process 91.
4. Glazing of ceramic parts 93
5- ~ Machinihg of ceramic parts after firing 9
1
60 ~ Metallizing of ceramic parts 9
7. Manufactur'e,_of.,gl,ass partition-insulators 100
Ch. 6. - Manufacturelof Capacitors 102
1. - General information 102,
~2- Capacitors with paper dielectric and foil plates 103
3. .- Metallized paper.capacitors 113
40 -~ Capacitors with polystyrene film dielectric 122
Mica capacitors 126
Eleetrolytiocapacitors 1-34
Glass - enAmel capacitore 138
Miniature ceramic capacitors 141
go Variable capacitors with air dielectric 142
Ch$ To
Manufacture of Rdsistors
147
1. General Infoimation.: 147
ard 5/8
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