SCIENTIFIC ABSTRACT ZHURINA, F.G. - ZHURKO, V.A.

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• Collection: Scientific Abstracts
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• Document Creation Date: November 2, 2016
• Document Release Date: July 16, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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L 35369-~k EwT(1)
ACC NR, AR6017792 110iVIA044
SOURCE CODE.
'AUTHOR: Gorn, L. S. ZhuriMA.,, L. S.; lyanov,,I. D.'
81 om'K detectors
TITLE: 6.i'64ts for m-fold coincidences of enals
SOURCE: Ref. zh* Fizikal Abs., IA398
IW'SOURCE: Tr 6-y K~uclWq~jeWM. konferentaii po loelektron. T. 1. M.)
adarn. rad
Atomizdat) 19&) 127-132
TOPIC TAGS coincidence circuit... computer circuit) pulse emplitude, particle detectox
adder
ABSTRACT: It in noted that the many practical cases, When registering coineldences 01
signals from several pickups (for exai using K detectors)~, it is ofinterest to
construct a system that registers separately cases of coincidences of different multi-
plicity, i.e., operation of all K detectors, and also of arbitrary.combiriations of
K-1, K-2, etc. detectors, and in the general case the operation ofan arlpitrar7 number
(m) out of K detectors. A description of such a system is piesented. Its construc-
tion is based on the principle of a summing mixer, when: the signals from each of the
detectors are normalized in amplitude and duration, and are then nummed., Th,e ampli-
tude of the signal after addition turns out to be proportional to the number of de-
tectors operating after a time T: where T is the duration of the normalized,signals
and the resolving time of the coincidence circuits. The miin units of the proposed
system are signal shapers and a summing mixer; amplitude discriminators.and:registers
Card
1/2

L.N.; DITKIN, prof.., ctv. rvd,;
ORLOVA, I.A.9 red.
(Tables of degenerate hypergeometris, funationo] Tab.-
litay vyrozhionnol gipergeometri-.1neskoi funktsli. Mo.-
skva2 Vychislltellryl tqanLr 91 SS38R, 1964. 2-43 pi
q

,2 1 A9
USSR/Fhysics of High - Molecular Substances D-9
Abs Jour Referat Zhur Fizika, Ho 5, 1951, 11544
Trapeznikovn O.N.
Author t Zh!i 11
Inst Leningrad University
Title Rotation of Molecular Groups and Temperatvre Dependence of'
the Photoelastic Coefficient of Certain. Polym--.~xs-
Orig Pub Zh. fiz. khimii, 1956, 30, No .10, 2190-2293
Abstract A measurement is made of the dependence of the photoelas-:
tic coefficients of polymers of ethylmetacrylate, butyl
metacrylate, methyl. metacry4te, and vinyl acetate from
-10 to + 1500, and the temperature variation of the
hirAfrinapnop nf nrPvimiq1v-nriPnt.PA nnPt--1mAn4 frrim -10
to -1800. The time ciwves of loading and.unloading were
investigated, as was the dependence of the phctoelastic
coefficient and the stress in the highly-elastic state.
Card 1/1
----- --------------------- ------------------------ .......

L9
USSR Ch stry - PhatoelasticIty Dec $0., !;4
~,~:"Mole,&ular,'Rotatidn an&-the--lemperiture. De
denc.
e.1of the.Photoel6stic Coefficient of !X
Aetb J, N. Trapeznikova, M. X
. y1metacrylate " 0 1
Zhurina, Leningrad State. U Ameni A. A. M2dandvil'i':.,
'':"Zbtw,,Fiz Xhie Vol XXIY, Wo:12, Pr
Temperat=e dependence of photoelaotie Coef
30-190
.~f Iclant of pol3methy1netacrylate from OC
suijg ts~-the,COOCH~ group ratates and its
anisotropy falls as temoperature increases.':.
COOCH3 group is "fto-~!V
~Then,.vhen zotion.ofltbe
this dependence characterizes mobi
7-i,
170TU.
USSR/Chemistry,- Photoelasticity Die~c~-'
;50;
(Contd).
_.the'.darbon cbain; Resemblance -between-: tIiIA
nce aad
frozen" depende te*erat=e aepefiaelicir,
of pbatoelastle coefflcient-~C pol*styrena'.
pdints*to absence of motion of benzene rillie.
4W-Polystyre'" _tTrOzen, otoelastic coefft.,
Ph
cleat always,has negative sign, tbii 4kr
w1i4v-the - lar&a.,anisotropy
of the COOCH g" Mg
715 with: th*_: 013~ -Thero--. i~ e2d=.
of
A i. :L4-
t
of tb:e_--c&rIxm cbaiz"
7'

NMI![ MR EIRAMPKII-11

ZHUR-j N Ir ci
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Structural s:.rength of, D ttivouzi ~i-ccrsit=~ Of 2.1t1y
tiS dfrendont on -,IM- deg-,,i.:(.f Or W~Itorprooflf~? or t-ho stirraze%
partie~lea. K' o III . -- h,; 6 r o . J,, r 1.4 .1 . 4, 441F, 164.
(111RA 1'7.9)'
fiziaheskoy khimli AN SS-S-R, Kv.)5kva.

KILUTSKIY, Ye,L.; KECHKERt M.I.;
Diagnosis of myocardial' infarat' in left ~=dle trauch block. TOXVI
arkh. 31 no.2: 77-834 1390
1. Is 1-y kafediy: terapil (zav. deyetvitellny)- chlen ANN SSSR prit.
M.S. Vovdi) TSentrallnogo Instituta usoverghenstvaTanlys vra6h*y.;'
(KYOOMUL DTFAROT, compl.

511,181/61/'063/011/038/656
00 (10 2 5-1 e Y 3., ;1,0010'
AUTHORSs Zemskov, V. and Yurkine., 'K, V,
TITLEi Hall mobility of electrons: in ait!hl.y alloyod'~n-type
germanium
Fizika tverdogo tela, V. 3, 'no. '11, -1961, 3509 3513
.PERIODICAL:
m
TEXTs The Hall mobility of electrons in n- type eermaniLi rioziocryetals
19 -3) 19: -3'
alloyed with antimony (up to 2 cm &Drt a r;~ Qni 0(up 'to.6.0-10 am
-5,10
was studied. Specimens out frommonoorystal irjejz-s were. usad:for
measurements carried out at room temperature. Tine apeaimenn~had the
dimensions 7-3'1 mm, the ingots had been produ-,-ed by cry'stal'pulling.
The method of manufacturing stronglyalloyed gertaictum was described iii
previous papers (B. G. Zhurkin et al.$ Izv~. AN -MIM, OTIT, jioo* 5t. p. 86t,
1959; V- 3- Zemokov et al., Tezisy dokl. na kunf. pcl ad'aTnoy'ionizatsii!
i tunnelinomu effektu v poluprovodnikakh, Baku, 14 -- 17'o 1!)60)~. Electron-
electron oolliaions were not taken into aooomnl~ beiause:of do Igeneration
in alioyed'germanium. The Hall mobility was ocrapated by the, relation
Card 1/3

30793
5/1 8~1161 It 003/011/038/;56
Hall mobility of electrons in highly... B'1 04/B1 02
11M R/? where R is the Hall constant and the resistiv. ty The two
A 0
latter quantities were measured with the use' a I'SUO (I)Pft~-I) voltmeter
and an M25/3 (M25/3) galvanometer by a d-o comperalatioll method. Magnetic
fields of 3800-4200 oe were employed to msaiLu,e 11. The measu-ring error,
of ? was + 5 %, that of the Hall-emf + (10-20)"5'. The k8SUltS showed that
the Hall m3bility of the electrons in -gerinvurliu4- :tlloyed ~ Tf ith, antimony
18 19 -3) by far exceeds that of germa-niuin of a'qui:l.arse ic
(10 10 Cm 4 n
19
concentration. At an impurity concentration tJ 10 c1-3 the Hall
mobility of electrons in germanium alloyed' Yil ntlimony io almost twice
that in germanium alloyed with arsenic. It i.s that.this difference
is due to a change in effective electron mass Ill, wi-~,h the impurity. When
electron scattering f rom impurity atoms and -1 a t vibratior~s.~ was take:n
into a9count, an estimation of the effective VA.I.Jau'r'.;1 U arid, m
n Sb) ~19 n(As)
17 -jo cm-3
showed that within the concentration rango.of 5.10 - 2.5
%(Sb).
was changed from 0.19 m to 0.30 m. In the~xangp of arsenic. concentration,
Card 2/3

(09
3/'Ie-i/61/063/011/038/056
Hall mobility of electrons in highly... 13 1100102
of 5.1017 5.1019 cm-3 f mn(As) waschanged from 0.195 m' to 0,52 81, The
authors thank B. M. Vullj L. V. Keld sh, and V. A. Chuyenkov for disodaisioni.
There are I figure, 2 tables, and 10,referencest 3 Soviet and 7 non-Soviet*
The three most recent references to English-language publications read:&*s
followas W. Waring, D. Pitman, S. Steele, J. Appl. Phyq., U~ no. 61 10020
1958; W. E. Baker, D. M. Compton. J. B. M. J. Res. and Develop., J9 no, 3P
275, 1960; M. Cardona, W. Paulp H. Brooks. fleiv. phyS. a0tap 31.1 no- 59
P. 329, 1960.
ASSOCIATIONt Institut metallurgii im. A. A. Baykova AX.SSM Moskva
(In.stitute,of.Metallurgy imeni A. A. Baykov AS USSRr-Mo:8cow)
SUBMITTEDs March 3, 1961 (initially) July 3; 1961 (*after revision)',
Card 3/3~

S/i 2o/6 2/ooo/ooi/o3o/661
E14o/E463
AUTHORS: Anufriyev, B.F., Dokhnovskiy, S.B.,!._Zhurkin, B.
Kopylovskiy, B.D., Penin, N.A.
TITLE: Transistor current regulator for electromagnets
PERIODICAL: Pribory i tekhnika eksperimenta, no 1, 1962 129
0
TEXT: A classical current regulator is described'using
transistor circuitry for.stabilizing currents 0 to 30 A for
electromagnets used in physical experiments, The voltage
reference is.the drop across-a manganin tape in.an-oil bath,
cooled by circulating water. This voltage drop 1,3 Compared'vith
that frome dry battery. The stabilization factor per *C is
3.03 x 10 - The bandwidth of the regulator is 20 kc..
*There are 2 figures.-
ASSOCIATION: Fizicheskiy institut AN SSSR
(Physics Institute AS USSR)
SUBMITTED: may 8, 1961
Card 1/1

377.35'
B039/E435
AUTHORS: Zei~skoV, V.Sj Suchkova, A*D#, Zhurkin,.BoG.,
Wang Kuei-Hua- (Moscow)
TITLE: The solubility of aluminium in germaniunt-and the
influence of aluminiumon~aome,electrlcal properties of
germanium
~PERIODICAL: Akademiya nauk SSSR. Izvestiya. Otdeleniye tekhnichesicikh
-134
nauk. Metallurgiya i toplivo no.2, iq62, 131
TEXT: The initial materials used were~electron type germanium
with a specific resistance 'of 50 ohm cm and aluminium purified by
zo~ne meltin containing Fe~< 7 x 10-4% Mg 2 x 10-11%,
Si 4 x 10-f'%, Cu 5 x 10-:)16 and Zn < 1 x 10-4%. Alloys! if ore;
10
prepared by the extraction method and all the investigated samples
'ted*
were single phase. The region of solid solution was 3.nvest:Lg-i
at 6750C. It is shown that the concentration,of Al~in solid
solution varied from 9.97 x 10-3 at-.% at a concentration of
'Al of 0.1 at.156, to 1.544 at.% at .'46.2,at.% Al. A solldus curve:
is plotted on which is included resultfv,from earlior.papors.
Good agreement is obtained at,8500C but tho!aarlier results
Card 1/2

s/1806?./o
00/002/014/01
The solubility of aluminium, E039/E435
give rather lower values of Al~concentration at'tempbraturfers less,
than 8500C. The concentration of current carri'ers i4a s
determined by-measurizig the. Hall constant in a magnetic field pf
4,000 oersted and using the formula n =.A/Re where A is a
coefficient, dependent on*the diffusion,mechanism of'the current
carriers, R is the Hall constant and. e is the electronic
charge. There are no accurate data,.for the-.change in. A with
concentration of acceptor atoms. However, estimated values a!ir0
shown to give results within thwlimits of experimental error..
The depe ~Ldence 'of the specific reslstance~ p on! the:'concentration
of Al at�ms ~n is also determined and shown to' Call 'on the, same
line as vhlues for In and for In Ali Gn obtained previously.
variel from 5'X 10-2 to 2 x iO-4 ohm cm for': n varying'fkom~
lo17 to 1 21 cm-3. Values of the [tall mobility'are calculated,"
and shownl~o agree with earlier-.results-. A weal~ dependence of
-oncentration
ji on the concentration of acceptors, is f ound' at ~ a. a
of Al atoms ~, .101.8 cm'-3 which appears to be dependent on
screening. There are 3 figure-sl-and'l tablw.
SUBMITTED: May 31, 1961
Card 2/2

::377 6;. . .....
.3,
E040/Z535i,
/-Z2 CPO
AUTHORS: Zemskov, V.S., band Yur.kina,'K.V.'(Moscow)
TITLE: Th4 solubility of arsenic in germanium
PERIODICAL: AkAdemiya nauk SSSR. Izvestiya. Otdeleniye
tekhnicheskikh nauk. Metallurgiya I toplivol no.2,
1962* 134-135
TEXT., Arsenic,is one of the most commonly used alloying
elements of germanium but, in spite of this, '~he ayia ilable'~'
technical data-for the solubility,of'arsenic'in germanium are
incomplete and often conflicting.: The present investigation was
carried out using a technique involviM the extraction of samples 1
from molten germanium solution containing vdriotts:,concentra'~tioftiv
of arsenic and subsequent investigation,of the specimens thus.
obtained, by X-ray structural and microscopic.,analyses, determina-i
tion of the quantity of current carriers from measurements;of.the
Hall constant and measurement of the specimen risistivity'at
room temperature. The starting materials for the-investigations
were germanium with the resistivity 35-140 ohm-cm and diffusion
length of the minority current carriera of,not less than 2-2.5 mm.
Card 1/2

NORVAUUMA-M
nm_
The solubility arsenic s/i8o/62/000,1002/015/018
The arsenic contained calcium-ftnj~maghebi~m impurities in
concentratibna not exceeding:10- and 16- %1 respectively. A
partial phase composition..diagr.am for the As-rae syettem, in
constructed in semi-logarithmid coordinates in the temperature
range 700 - 9370C and the solidus line is drawn~inj together -with
the liquidus line quoted on the basis:of data roport4d by
H. St8hr and W. Klemm (Refs6a Z.anortan,und allgem.Chein., 19110~0
244, p.205). It was established that the highest solubility of
arsenic in germanium does not exceed 0.12 at.%. Theabove figure
for the maximum solubility of arsenic in germanium-ba'se solid
solution agrees well with the,value recently reported in the
paper by P. L. Moody and AQ,Ja Strauss (Ref.9t J6 Electrochem*Soc.~t,
196o, V.107, p.64). There.are 1 figure'and .1 table.
SUBMITTEDt May 31, 1961
Card.2/2

- - - - - - - - - - - - -
CCESSION NRt AP4028h4~ s/o=/64/bo6/oo4AlJa/1l44, -
AUTJIO~Ss' Zhurkinj B. Go; Perdn) No A,
impurity atom on the'aIxictrum of elacLron~
:TITLE: The effect of concentration of
pqramagnetic resonance of donors in silicon
ISOVRCE: Fizika tverdogo telas vo 6) no- 4P 1064.. 13141-2144
TOPIC TAGS: electron paramagnetic resonancej Bilicons impurity atomi doped oemi-
conductor., Czochralski method, impurity, concentration
ges in the EPR spectrwIt
ABSTRACT: The authors describe the results of studying char
in single drystals of Si doped with vhrious concentrations, of P or As. Measure-
17 t
ments-were made ir. thetemperature interval 2-20K, The cryistals.were grom 'he
Czochralski method, and impurity concentrations were deteminal by,measurifid-the
.1016
Hall coefficient at room tealperaturea These. concentrations ranged from 1017-3
1cm-3. It was found that increase in donor concentration leads to gradual disappear-I
ance of lines representing hyperfine interaction in.the RM spectrum and results in
the appearance,of,a single lines the width,decreasing with inoreaue ift concenbrii
Qird 113 A
7,

.......... ....... .. .. ..
ACCESSION HR: Ap4o26443
and in temperature, within the limita of the experimental ranges of these two
factors* The observed changes in the EPR spectrum iro expl ined by delocalisAio~
"of electrons as the impurity band develops and as metallic comiurtivity begins to,-
appear. Compression of the single EPR line with increasing conctantration qf As'Vas
1 found to take place at higher concentrations than with Pe' The
niture of the
-1. spectral change also indicates 'chaotic interaction of tkte impurity~ atoms. Thci EPR:
-j spectrum shows lines of isolated atomaj linesdue to different grouping of ato!w j
lassociated with exchange interactio% and also lines of mobite e. The
lectrons
:...,chaotic distribution of impurities (in forminiT,an impurity band) gives rise too~l sov,
..of energy levels near the conduction bandp each at a different depth and corre',:
j sponding to dif ferenb groups /of atoms, with wave f unctions of ~ Uxt donor electrons`~.
overlapping to various extents. "in conclusion) the authors "'preso their thanko
to M. G. Hiltvidskiy for preparing the single crystals of silica doped with
lphosphorus and arsenic," Orig, art* hast.. 4 fig
urG04
ASSGUATIONs. Fizicheakiy. institut im, P# U&.1abedeva AHISSS~j'Moscow (Mysical
!Institute AN SSSR)
Card
7

ACCESSION NR:
AP4028443

sLamn'TEDs 03Xov63
DATE ACQ t 27APr6k:, ENGL%- 00
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BC ~SS:
S '000
no PZF so~ O
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5

UB CODE:
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17

card
1
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MUM=

If U H 41111144 IIIH V
ACCESSION NR: AP4043402 S/0,181/64/006/008/2550/2 60
Peni N. A,
AUTHORS: ZhurkinL-AA--G. n Volkov, V.,, A.
-TITLE: Influence of compensation on the form of the epr, spectral
i
-type.silicon
n n
2558-.;2560
SOURCE: Fizika tverdogo tela, v. 6,. no. 8, 1964,
TOPIC TAGS: electron paramagnetic resonance, line broadening,
phosphorus, silicon, boron, cryptal.growth, spectrometrya impurity..,,'
content, spin balance
ABSTRACT: In vie%4 of the confusion still existinq~with respect'. to.,1'!~
..the distribution of the energy states 1n.the impurity Pand,the'
0 ph The measure--~ j,:,-
authorsexperimented with ph s orus-d6ped n-silicbn.
ments were made for three values of the.phosphorus~concentration:
17 17
cm:-3
2.3 x 10 a 6s0 x 10 , and 1.0 x 10 A with the pbosphoruls:~,'
entration in the compensated samples being equal to,the concen-,
conc
Card
1/4

!ACCESSION NR: AP4043402
itratiOn in the corresponding uncompensated samples. 1~he conq)ens a~
.-Ition was effected by introducing boron'in crystals grown by the
!Czochralski. method. The samples for the measurements were cut "'from
compensated and uncompensated parts of the* same sing1d crystal.
"ne: EPR S c
iThe experiments were carried out with a superheter'ody e
cli-
'trometer at 9.4 Oc and 2K. The results show thatlat 2.3 x 1b 7~
ithe width of the impurity band,is still narrow and probably d6es
i i not exceed kT (1. 74 x 10-4 eV) . , -At 6. 0 x 1017 cin -3. apparently at
least 90% of the states of the impurity band lie above the level
i; - corresponding to the iaolated impuritylatoms. This was in contr,a-
diction with the.theoretical predictions which call for the states J,
of the impurity band to be symmet.rical.with respect to this energy
18 CUC3
level. At 1 x 10 the compensation decreases the*spin con-~~!
~:centration by.approximately a-factor S.and.broadens the EPR 1i e.t&
n
8 Oa. This indicates that the electrons of the lovrer states in the
:impurity band are.more strongly localized than the electrons of-th6~-
bigher states. "In conclusion the authors are grateful to A. N,
Card 2/4

...... MII IIII'A I
66 LVT(t) Wt.)/EWP~~',:;~_
ACC NR-'Mi~wif4i
"'I"' 1HO
210106 .... =" MIR
A It'll uAl
7
Ic ion
re: ure d6i p~'e~ nde~'4e 6. epee 0 f
ABSTRACT: -The dahors -in esii~a~
diihe t646
_e'
lelectron paramagnetic resonance: in n-typ lvilji.~~
that the hyperfine interaction line$ bL~havod ~dlfreientl 6~H,, ~~f i:aamv 91
V in. npe vith-
different phosphorus con centrations t. ~suroments we~~e!,~j~de~!at ty. :tem t e
4r yr
T
(2 and 20K) for samples with donor - coneentrationi- 2 j .44!5,) v~ni~;;6 x ~161T Cm 3j tw, -he
n e 11 md'.rdaaed. I
'last twozamples the Into sity of tit fife inter MP 1y
wpor
h for 6c t!) ~~nqt
wit increasing temperature. ThIs ~ dif a q, In: attr1Wt.04,, 1;
ffferea
ramagnetic centers which:make.th6~via - contrilbix U, 196; - lines. A ffer-
of the:pa
-1017. cia~3 th4
tiondc hy1mrif ile ifihId ELM
ent phqsphorus concentra x
n "ON
due.principaUyto,the isolated~atoms of Oliosphorus i ~~ghiln,e M t 37ierlap h VaVe
functiona is insi ificant at,thio,-:.4oiiaentrELtio~n~-At.hiOie 1*ncfdit:~iitionsl ~re! in
conoiderable overlapping of the Udvd functionh- d; tile h~! L'j racti(~ ~:l as
PA
A I if~
J:

J
L 4109 66
ACC N R
AP5021143
:,: M; ;! ; ~
e I Azi I ne re asp v, ~ea C led sxl Cl
are then due to g',roups of int rutifig ~'atoim tim
crease in the frequency or the jump between tile mtomso fj~j.j (vi inte.-mi ficeitiiojl~ 6ethe
deloc,g.lization of the electrons$ and is therefore accompaMed 131t. a ftereasm. in tile
hyperfine-interaction intensity, Orig, art. hatit I figirre .
ASSOCIATION: Fizicheakiy institut Ift, P, t;, Lebitaevil Akw !I w 1. ass h a CI3
ti,I
e Acad#.nq of Sciences, BOSH)
laistitut
!IP
-,ODE t
S LIB MI D 1914a765 MCL: 00 0,IM r. GS,, 1.7p
MF14 0 Q 1

A
(b)
Yt( V, JJ
.5039-66 E
'ODE' 11 to/
ACC W AP5027391 SOURCE 4 011/j
P,,.enin - ~11,-A.t- Zhurki Volkav~-B'. A.
AU11101t:
e IM. P.L N.. Lebe
ORG: Phy lea Inatitut Mo1qcq~(,,,(:F1rihh0s iy'
t
M SSSITQ
TITLE:, ~,The influence b
of, concentrations,of-d~no ra .6~il itw:~ elp.
-ductivity -of--highralloyed ~,w;typ~ 1i c on'
z i
SOURCE,-' Fizika tverdogo; tela': vi: 7 nq~ li 50
t96 310
UV.
A
TOPIC TAG$::, electrit;conductivit' imptirlt-y. jco~ddlcti~! iy;, Wr tj I pur ty
Ys ys,
_band silicon'al
0
~_y
i, it
W4 e: p IT
ABSTRACT:' An investigation 8, inad 6 it~e hoe
p _TeI6 y 4 hi h'
'_h0_ the deg '. of 6ompOns-Atlon b oron: o ~6,e ci~jic 6666'u&iVit 'a 9
rus and ren
alloyed n-type silicon with weW: -and strong compensation :i~lli~ r
from 4.2 to 78K:.--~The activation energy q ofj.thej~purityi,~'&ftd6~~ -Iiy~ iind the -ejc'tiV&
i 'i - , I ~ bents* 1 1
Of7the--hoppIng-'coo -dW ti4i ,ty were _, _ easu red. !J%e mpwiluren
In lit.
performed on weakly and sit rongly:,comperisatad pilicon
Y~
con _N :'O'f__2 x 10. -;AtOMWI~f 066~orus, p ~~Vm,.
centrations D
ISpecimens were cut from noncompensated and, compensated par'4 of tile; 8~~a sil. lion i:
L
single, ~ crystal.: - Compensation accompliWj6d :b ~imq, uc the
melt -during the-,--growth snsat n.
-of- tlle~ crystals.~ The degree, 1 Of. rd L, io
K_ - NAIND in the specimens:~vas dete~mk~ed by. measuriig: i5oll! the t(*er~!_
Card it
Lcar
_Z2
---- ------

A
L 5039-66
-ACC NRs AP5027391 _T,
~ture of. the H 11 effect h& uc VI i th
impurityA 6 60' a;'Ltq' iii"h oft6ap"
Ahqtm~e~' the
:compensa ius
t i nig" in~sh! ---t I I i U ~. ~ :1 1 !
_-i rity cond-6-6_if~ity. Bore i
el,of the. mpu thq!.~oir6apond tig
sp or-us concentratiomi d 41th
crease in the pho h A: det;rease i of ~~the(:4ti s~i~n ei~ergy~
the-concentration-of7phosoliortts was observed 4't: cancentratioh,6 at: ~Wl~ich:ai subduniial
q~boftom~
overlap of wave functions of impurity-atoms oecurred. Ihis: i.WerUpkaused t~
r
of the conductivity zone to decreasem 'The atr~ohg infl~oic~ k a ittilipt. IMPU4~ i: o4 thli "J"-
activation- energy c is limited by: the electriz! fieidsl:_of `C* d": f-~mi~6r Im
ge oms
puirity, which are ef f ective at large...distaoces:.:. With, an L11110 eit db~cent rate
d
Pas f
phosphorus atoms at a small'degree~of comp nsa ttion_,~, the' .6herg'
-actbiAiDil y cj f t e
y an a.:cooc~~ L 61 6-3
hopping conductivity increased initiall' d then. Ot (rat* ri 'dive
began to decrease.*, At a sm'all degree~of compehSat6n,-tj1d 6p# 1 c of _-dond6ct.Wii~.'
nde
on tem erature-has definite values 'for 64 ~actlvation e6e'rgl" lind' k 2~. F~
on efte
p At
stance, at a strong compensation in specimens ~itli~ a high coftent440n, UdIntdrs,i the
epend,on .temperature. -. This, t:4, , be attri uted'
activation energies claad.C31 d b'
emergence of a strongly fluctuating.4166tric, field, generated kb~ thil :charged JoLpER., and
acceptors.. Orig.. art. has., 3 figures, 6 fortii~lai i; afi& I thk0_6
S US CODE 0/ '.'HTBk Mn: 16A r65/ ORIG REP.6 F 6: 1ATD P.. Si~
p
j;-
if -
L
if,
71
~;i" 'Card 2h

ACC NRI Ar-6037022
SOURCE CODE: WVO3B.1166/bU31o111344513"7
AUTHOR;, Zhurkin, Kocherenko, I. V.; Pcnino N. A.
ORG: Physics Institute im. P. N. Lebedcv) AN SSSR, Moscow (Fizicheakiy institut AN
SSSR)
TITLE: Influence of uniaxial compression on the jump c6nductivity in p-Gi
SOURCE: Fizika tverdoeo tela,.v. 6,,no. 11) 1966, 3445_,V~4,r
TOPIC TAGS: silicon somiconductorp' semiconductor conduct :ivity, pre.rsure effect-,
activation enorgy,.temperature dependence
ABSTRACT: The purpose of the investieation was to deteriiine the,dependence of the
activation energies e,2 and C3 on the pressure in p-Si. The Measurements of the elec-
tric conductivity were made in a sample with boron impurity 1.6 x 101a cm73 at pres-
sures 0-37 kg/rIM2 and temperature 4.2 - 77K. The pressure and:the current through
"hat the tem-
the sample were both parallel to the (1101 direction. The tegts showed t
perature dependence of the conductivity can be represented as a sum of cxponentials
in the activation energy,
exp
kr
The conductivity with activation.energy e1. corresponds to transition of holes,.from
Card 1/2

ACC NRt AF6037022
the acceptor states to the valence band, and remains pract'ically unchanged t4th pree-
sure. The conductivities with activation energies C2 and'~3 correspond to the jump 1~
conductiviiy, ~_nd increase with pressure. The relation between I t.he change In the,
values Of E2 and 63 and the distortion of the spherical form ofAhe acceptor wave
function are discussed, and the resultant addition to the Coulomto-interaction eneriv
is evaluated. The results are discussed from the point of view that the eg process,
is connected with the ionization of the acceptor atoms (change from states, IA2 to
-states A+), and the c3 process represents negative Ionization of the acceptor etoms
(transition from AP to A"). It is suggested that the eff6ative Bohr radius oUthe
states e and AP increase with increasing uniaxial compression.' The authors thank
EJ. M. Vul for a discussion of the results.. Orig. art. has; 21figures and'l formula.
SUB CODE: 20/ SUBM DATE: ~17Jun66/ GTH REF: 005
Card 2/2

ACC NRI AP7005840 SOURCE
Penin, N
AUTHOR: Zhurkinj _ D-_ A.; Svarup, P.
ORG. ft sics Institute Im. P. V. Lebedev, AN GSSR, Moscow (Azicheskiy institut All
SSSR)
TITLE: Influence of jumplike motion of the electrons on the, EP11 spectrum of ~bos.
phorus in strongly doped n-type silicon
SOURCE: Fizika tverdogo telaq ve 8, no. 12, 1966, 3550-3554 '
TOPIC TAGS: electron motion, epr spectrum.. phosphorus) silicon semiconductor, seai-
conductor impurity, spectral line, line width
ABSTRACT: This is a continuation of earlier work QTT v. 7;11~ 3204,:1965 and;elsew6ere')
where a strong dependence of the EPH spectra of phosphorus in n-Si an the impurity-
atom concentration, temperatureo and degree of ccmpenvation:%eas established.'; The pre-
sent article reports results of research on the vhape and width of the central line in
strongly doped samples as functions of the concerrtration ofthe phosphorus atomp.the
temperaturep and the degree of compensation * bi iron. The samiaes were grovn by: the
Czochralski method and the EM spectra were Meavred in thi inteival 2 - 20K with a
at 9.4 GIN. The lin shape~was analvzed by
superheterodyne spectrometer operatin a
comparison with standard Lorentz.and Gaussian cu.-ves. The reiatlts show'thatr an in-
crease of the phosphorus concentration from 4 x Vt*r to I x 101113;~ cm73 and of the tem-
perature from 2 to 20K produces nuverving of.the linap wbida luis a, larentz: shape at
Card 1/2

8/0 58,1631000100 -2/0 45/070
A06241101
AUTHOR: Zemskov, V_S., Zhurkin, B G Suchkova, A., D,, Yurkina, X. V.
TITLE: Production and properties of strongly alloyed:germanlum
PMODICAL: Referativnyy zhurnal, Fizika, no. 2, 1963, 7,1# abstract 2E473
("Tr. Soveshchaniya po udarn. ionizatsii i tufinel.1n. effektu V
poluprovodnikakh, 1960". Baku, AN AzerbSSR,.1962, 130 - 150)
TM; By the method of extractihg the solid phase.from a:smelt with a. large,
content of alloying admixture, single crystals of Ge were,obtalned with a concen-
tration of Al up to 1.0-1021.cm-3. with a c n entration of As up to 6.0-1019 am'-3,
with a con entration of Sb up to 2.5-10 9 cm-3 and with al~concefitration in In up
t0 2.0-1015 cm-3. It,is established that there is an increase of solubility~of,ln
and Sb in Ge at a combined alloying, and this is explained on the basis of-the
electron-hole interaction in the solid phase. Applying the method of quantitative
radiography and measuring the Hall effect made it possible to determine separately
the concentration of In and Sb In the solid phase of Ge, while the data on.the:
Hall mobility show an absence of neutral ion pairs [In- Sb"]O. It was foun&that
Card 1/2

ANMIYEVt B.F.; DOXMIOVSKIYt S.B.; ZIMMINO B.G.; KDV
YWVSXIY, B.D.-
PERIN, N,A*
Transistor current remilator for electromagnets. PrIbA tekh.ekep.
7 no.1:129-131 Jaz (KERA 150)
1. Fizicheskiy institut AN SSM,
(Transistor ciremits)(Voltage r9gulators)

8/076/62/036/00~/003/011
13101/B102
AUThOR.'i: Zemukov, V. S., -Suchkova, A. D., and Zhurki~,.B,,G. (.,,,,osc6v-.Y
TITLEs Study of-the hel.erogeneoue equilibrium in the system Ge-Irr&b
PERIODICAL: Zhurnal fiziche skoy khimii, v. 36, no.- 9, 19692,, 1914 - 191~8
TEXTs The equilibriiim between the solid rin.1 liquid pha6os wad determined
on three cross sections passing through the Ge-In3b er6as section. The
a - a cross section corresponded to-a Ge content of 66.7 atopf~, equi--
librium temperature 860 0 C, the b - b 8ross section'to ai~Ge content of
u e 6 an(t the' C~' -
71 atom~4, equilibrium tomperat r 12 C, crovs, aoetion * to' a
Ge content of 41.2 atordiv~, equilibritim toniperatnre .6.72 C. Tbe concentra-
tion of admixtures (In, Sb) was determined in the Go- crystal, pulled nt
0.4 mm/min. n-type Ge va& used, resistivity 30 ohitn-cm,: electron mobili.-ty
3600 C'm/v-vac, diffusion length of minority carriers *21. mm. ~ The crystals
were examined radiographically, the number ~f carriers'aind t6,Hali
constant viere determined, and the macro- and microstruciures1were inv4s'ti-~
(rated. The Sb concentration was determined with the aid of~W24
the In
concentration on the basis of the-number of.current carriers~~ ReBultsl':
Card I
All

8/076/62/0 6/.o69/o03/O1 1.1
B 01/B1021
8 tudy o f the heterogencous
Isolid 0 re. in VIA 'h
(Fir.): phnses c ntaining more Sb than: In a in eq-ailibriu t
-the Ge-In3b croar section.' ThtAs tbe Go Jn3b cross. seotion,::J s riot a
quasibinary system as it does not reproduce the, true etlaillbrium. oetlwedn
the solid nv:d liquid phases. The increas(eJ 3olubill ty bf. In ~ and 8b
jointly pronent in Ge in explnined I)y an ale3tfon - hol'e eil1rhibriur, in
the solid p1h,1pe, since the formation of F.1 C)b Jo compi,exes As i.rnprn~)-iblo
at the experimental temperature. There is 1 figure.
ASSOCIATION: Institut metallurgii im. ~A. A. Baykova(institute of ... e611-
imeni A. iL.:~ Baylkov)
urry
3UBMITTED: January 7, 1961
Fig. Varia-tion of the 6b and In contents ':in :them solid.~bhaaea as a func-
tion of their concentrations in -the liqoid phase. a 7;a cross
section; b cross, section; c,- c cross soctionj (1) jb~ln
the solid-pbaae;.(2) In in the solid phaseivan~~, aton6i dotted line
theoretical soiuiL.ility.
Card 2j-lf

39976
B/18IJ62/004/008/021/041
Foe') B102/0104
AUTHORSs Zhurkov, S. Noj~and Abasov, S. A.
TITLEi The dependence of the'strength of polymers on their molecular
'Weights
PERIODICALs Fizika t4erdogo tela F Vo 4p no* 6p 1962 2184 2192
TEXT: The relation between strength'and molecular w6ight, It of polyalers
is well known, but only in a qualitative way. To determine quantit&tive
regularities the authors studied the dependence of strength on the'degr4o'
of polymerization, p, in oriented.and disoriented caprone fibers. 'The
molecular weight of the fibers was changed by UV irradiation. The;load_~
longevity-curves (-i(o)) and.ct(p).of:irradiated samples Were measured a'V
different temp -oratures. Using the relation c a % 6xp[(U,,, - cf)/kTI this
0 J
enabled the aotivation.energy.U *,the structural coeffioient,V.and,the
10
time factor Ir' td.'be:deteriAnedS' Re'aultat log i decreases linearly with
0
increasing.cf; the low ter it d66 so. The strength
or temperature the fas
is rapidly rbduced,when M decreasss.'~ U of oriented non-irradiated fibers
0
Card 1/3

/161/62/004/0081/021*/~41-~t
'gth,(aftes B102/310il
The~'dependenoe,~of the stren
.12 2
(M -i 14700) was': 45-. kcail/molai --r -U 16 seat w 0. 29. koal/mola-mm. Ag,",
0
r 20-hrs irradiation Mdrop e& to 340
d -152 kg/MO (at 7700- Afte P
d to 37 k9/= 2 and r 1.23. In the case of nonorient6d fibers M C*ns6,~
between 0 and.:20 hra irradiation, from.16950 to 37001 d from 24.7 to~
2-
~9.8,kg/mm 0 Af constant tem'p ers.ture log -r is' a
-and.f.from 1.82,1t 4.60.
linear f unctioinil~o-f 4 cro- and'--* thif:diff erent M a bundle, of a traight lines, is
obt
ained. Since these lines converge to a point on, the ordinate the''
factor A T oxp(U /kT) is oonstant.for:a given temp oraturej i.e. -; and, U
0 0 0 0
'do not depend on the length:of1he" polymer chain but !only,on )r, andip,~1/~.
K however is itsslf*a function of'the chain length. ;The physical M04ning
of the factor.~?r is discussed by Ireferenoe.to fluetuat iion mechanism governing
the strength of polymers (Zhurkby and Abasov., Vysokomoleks~ soyeds 1962)#:
assuming that~destruotion is due to the~effeots of 6ermal ftuotustionsb~
The resulte.obtained here and also those of other authors show good';agree-
munt with thia lhoory, ThONO AV@ 0 ftprog 4A4 i taUte,
ASSOCIATION's Fiziko-.tekhniohesk,iy. :inatitutiimo A. Ft loffe ANISSSR Lenin~
iad (Physiootoabnical Institate imeni, A4 P.. lof f a AS USSR,"~
9
Leningrad
Card 2/3 2

N. 'OLAYLY,
FEDOSEYEV, B.V., kand. tekhn. nauk; ZHURKI V inzh.;
G.S., inzh.
Investigating the air-cleaning of legume seeds In a Vertical
channel. Trakt. i sellkhoamash. 33 no.11:35-37 N 163.
WIRA 17:9),
1. Nauchno-issledovatel'skiy institut sellskogo~khozyaystvft
tsentrallnykh rayonov nechemozemnoy zony.

ACC NRt AT6012785 (At) SOURCE CODE: UR/3175/66/000/027/0043/0050----
AUTHOR: Shaub. Yu.Bo; ~hurkin, Yu. L
ORG: VIRG
TITLE. Simulation of inertial distortions in geroaeophysical anomalies*
SOURCE: USSR. Gosudarstvennyy geologichesk
gjS~~ komitet. Osoboye konstruktorskoye byure
Geofizich7eskaya apparatura, no. 27, 1966, 43-50
TOPIC TAGS: prospecting, geophysic instrument, aerial survey, signal distortion
ABSTRACT: This paper discusses the distortion of geophysical anomaly signals~by iir-
borne prospecting instruments. Velocity, altitude and instrument time constant create
a distorting inqXtial lag, which depends upon the system's inertial parameter 8- vr/h,
wherer - time constant (adjustable) of the instrumentation,,v .. flight velocity, h -
altitude. Simulation of the distorted anomalies was desired to plan.optimum. values of
the inertial parameter B, and select a suitable instrument time constant. Simulation
showed the decrease in recorded anomaly intensity, the shift of the anomaly center,
and the shape of the distorted typical anomalies. Three typical undisturbed,anomaly
functions &0 2,03 were selected, Fig. 1, The simulator produced the disturbed
anomaly runc ions by analogue circuitry from the internally generated undistorted ano-
maly functions, applying their signals to to in inertia simulating block connected to
Card 1/2

BIRYUKOV, N.O.; ZHURKINA, E.G.; KRUG, YCL,; XULEMINI V.I.;
PCtM1j1zqTObYAp M*jj.i AnAAM.Lv'A,,V'.; SHORINA9 A,A.;
SEMENOVAq A.A.0 red.12d-val SHEVCHMO, O.N., tekM.red.
[Rue Sian-English-Garman-Fre'nah 'dictionary of terms on
automatic control] Fmooko-anglo-immetako-frantsuzoldi slovarl
terminov po avtomatiches~omu upravleniiu. Pod red. A.V,
Khramogo. Moskvaq Izd-vb AN SSSR, 1963. 229 p.
(Kin 16s?)
1. Akademiya nauk SSSR. Institut avtomatiki V talemekhwil*.
(Automatic control-Diationaries)
(Russian language-Diationaries-Polyglot)

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ZUBOY, P.I.; ZHURKI Z.N.-: KARGIN, V.A.
Structure of gels. Part 4. Effect of various additions on
mechanical properties of gels and gelatin solutions. Xoll.zhur.,
16 no.2:109-114 Mr-Ap 154. NLRA 70)
1. Fiziko-khimicheakiy inatitut im. L.Ta.Karpdva Moskva.
(Colloids) (Gelatin)

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Ali Nr, 98047 31 HV
EFFECT OF IONIZING RADIATION ON THE STRUCTURAL CHANGES IN RUB-:
.
.
BER-PLASTIC SYSTEMS (USSR)

Bl6kh G. A. V. A. Zhurko, M. A. V zankina, M. A. Vaolko-vBkaya,
ya

A. P. Melesh6vich,: F yn, and E. V.
V. Bro shte Talpenyuk, Nlysoko-
mDle1614Srr07esoyedfneniya, v. 5, no. 4, Apr 1963, 605-613.
.41190 /63/0051004 /019/020
Structural changes produced by ionizing radiation in doses of.1 to 100 Mr
in rubber-plastic systems have been studied at the Dnepropetrovsk Institute
of Chemical Technology. Th e changes in properties were evaluated from ther*-
curves in the range from about 60 to 220*C and from swelling
data. 7be experiments were conducteo with systems of sodium butadiene
(CHB), butadiene- styrene (CKC-300' 0 natural rubber and low- or high-pres-,
Wr
sure polyethylene or polystyrene (rubber:plastic ratioi, 86:20, 50:50, and
20:80) irradiated in air without heating. 7be thermomechanical curves of
individual nonirradiated and Irradiated systems differ sharply froin one another.
Cu-d 1/2

AXD Ur, 9W-17 31147
OF XONVMG PADXATXON (Cmt 1d) 8/190/63/005/004/019/020
a given temperature and radiation dose, network -8-fri.-u. c-iiii.e. foimation,_ In-
dicated by a lose of deformability and by the absence of viscous flow, was shown
to be induced by irradiation. 7he density of cross' links in Individual systems,
determined by Flory's swelling method, was shown to increase with an increased
of the dose and to depend on the nature of the'rubber and the rubber~-to-plabtic
ratio. In polymers containing phenyl groups radiation- induced structural
changes proceeded slower and required higher radiation d see. Analysis of the
0
results of the study Indicates that ionizing radiation apparently causes a covul-
carAzation of the r
dbber and the plastic and is accompanied by a change in the
physical and mechanical properties of the system: a sharp decrease In plastict-
ty, a decrease in swelling, and increases in harAne9b, ~ensilp strength, and
wear resistance. It is concluded that Irradiation of combinatio'ns of rubbers and:
plastics in predetermined ratios makes possible the production of materials with
the desired improved properties. [BAO)
Car& 2/2

I I '-i'll,