SCIENTIFIC ABSTRACT ZHUZE, T.P. - ZHUZE, V.P.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002065110001-5
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 19, 2001
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

24-12-19/24
Compressed hydrocarbon gases as solvents of oil and oil residues.
Part 11. 0
ethylene at 105 0. The ability of these gases.to
dissolve petroleum products increases in the following
sequence: ethylene propane, propyleue mixture of
propane with propylene; only products with a higher
quantity of paraffin-naphthene hydrocarbons are dissolved
more easily.by propane than by propylene.
There are 3 figures, 5 tables and 1 Slavic reference'.
SUBMITTED: May 3, 1957.
AVAILABLE: Library of Congress.
Card 2/2

lo, - t~ -. -2/-=
AUTHORS: Safronova, T.P. and Zhuzes T.1~4 165-12. -7/12
TITLE: An Investi tion of the Sol~bility,*Iof Gases In Crude
Petroleum ils at"Increase d Ptessures and Temperatures.
(Izuoheniye rastvorimosti gaz6v v neftyalch.pri.
povyshennylch davleniyakh i te4eraturakh).
PERIODICAL: ',Thimiya-i T6khnalo iya Topliv I masels 1958,,Nri2.
pp. 41 - 46.-(USSRI.
ABSTRACT: The solubIlitly of gases in petrr)leum is influenced by~
the pressure, temperature and~properties of the!gas,
and the'nature of.crude petroleum oils. The'solubility
of gases (methane., propaAep ethylefie, 002 and nitrogen)
in RomasWkinsk and Tuymazlnslci~etc~ crudes at,pressures,
300,- 350 atms. and.temperatures of 20, 50,,and'10000)',
was investigated and the apparatus for this is shown
in Fig.10- -Methane and propane,i7ere selected awthey
are-the components of natural'gasp~and also to define
the Inter-relationship between them solubility of a gas
and Its molecular weight., Nitrogen and 002 are~also
components In natural gasi eth7lenb Is not contained
in natural gas, but was tested to clarify the solu-
bility of unsaturated hydrocarbons. Pare ethylene,
which 3ontained no Impurities, ~,was used. Table 1 give's
Card 1/3 the properties of the di&erent types of crudes which,

65-2-7/12
An Investigation of the-Solubility of Gases in Crude -Petroleum Oils
at Increased Pressures and Temperatures.
were tested., ~Figs.' 2 5 show results obtained, in
the form of graphs., The quant Iilty of nitrogen,di6solved
in the crude petroleum oils increases when the pressure.
is increased, and at the same time the coefficient of
solubility of nitrogen decreases. 4n increase in the
temperature gives higher solubility of nitrogen* The
solubility of methane In orude.petroleum oils is con-
siderabI7 higher than that of nitrogen at the same
temperature and under-the same:pressure conditionse
Table 2 gives comparative data for solubility
ooegficients of nitrogeh,.methane, and other gilses-at
100 0. Propane shows better solubility than methane#
Gurves of the interdependence of the* 'solubility coeffic-
ient of propane and the pressure are.~oharaoterlstio
and show a sharp maximum at pressure interval of 50 -
75 atms. The solubility of.ethylene,i *n petroleum is
considerably higher than that ofmothane,but not as
high as that of propahe.- At pressures between 50'.- 100
atms..th~ solubility of propane increases rapidly with
Card 2/3 pressure; at 50 atms (2000) and 100 atms (50 and 1,0000)

6.5-2-7/12
An Investigation of the Solubility of Gases in Crude'.Petroleum Oils
at Increased--Pressures and-1emperatureso
the form of isotherms changes. 002 isvery soluble in
crude petrolew oils; it is more.~soluble than methane.
but not so scluble as ethyleneand propane. In all
cases the solubility coefficient's for the various types
of orude.petroleum oils are given. Th6re are 2 Tables
and 5 Figures, 12 References.* 8 Russian and 4 English.
ASSOCIXTION: Petroleum Institute AS USSR. (Institut nefti AN SSSR).
A,VAIIABLE.- Library of Congress.
Card 3/3

SOV/24-58-11-ri3/42
AUTHORS: Zhhuz_e_,__~~afronova, T. P. and Yushkevich, G. 11.
zm~os ~ow)
TITLE: Extraction of Ozokeri'e from Ozokerite'"Ores~by Means~of'
Compressed Gases (Ekstraktsiya ozoker;ita iz ozokeritovykh
rud szhatymi gazami)
PERIODICAL: Izvestiya Akademii Nauk SSSR, Otdelleni~e_Tekhnicheskikh
Nauk', 1958, Nr1l, pp 123-125 (USSR)
ABSTRACT: The here described method, developed at the Oil Institute,
Ac.Sc. USSR, is based on the ability of a number of
hydrocarbon gases to dissolve satisfactorily hydrocarbons
if these gases are compressed to some pressure at a
temperature exceeding their critical~temperature. :It i's
also known that the dissolving ability of gas, increases.'at
a conbtant temperature with increasing pressure; _~ 'at
higher pressures the gases begin to disso.Lve not only
hydrocarbons but also asphalt-resin com]~ounds. The test-
rig on which the extraction experiments were carried out
consisted of a.column, a s .eparator, alreceiver and a:
compressor. The colilmn consisted of a 1500.mm lon6v
45 mm. inner dia. tube scheduled to withstand 150 atmi.
Cardl/4 The colimn was fitted with external electric heatinE.,and

SOV/24-158-11-33/42
Extraction of Ozokerite from OZokerite Ores b- Means of
Compressed Gases
inside it the temperature was measured.by means of a
'by means o 4" ' ~
3-point thermocouple and the pressure, a pressure
gauge. The column was joined-bymeans of':a throttling.'
valve with a separator, a 0.5~1_itre ve~ssel,'rated fo 'r a.
pressure of 70 atm and fitted with external electric... :
heating. The separator was joined by means of a vslve~to
the receiver. The:operation was as.follovis: at th*bottom
of the column a few layersof the substance wa 'd to
s place
serve as a filter and ore was loaded into th~ collimn,
Following that, the column was heated to 100,JC , then, gas,,%ras
passed through it which was prelim-1-narily compressed to:the
selected extraction pressure. After~passing through:the
ore, the gas dissolved the hydrocarbons contained in the, ore
and passing through the filter which 1. retained the ore dust,
it flowed through a throttling valvelinto the separ&tor'
where the pressure was reduced to 40-50 atm.. The tempera-
ture in the separator was Raintuained~dt the' same level as
in the column, i.e. at 100 C. * Since at. these pressures the
Card2/4 gas no longer acts as a solving agent, the~products,
dissolvid in it sepai keri aw
,ate out (i e. ozo -to r material),

SQV/24-58-11-33/42
Extraction of Ozokerite from Ozokerite Ores by Means of
Compressed Gases
the regenerated gas is drawn off by the compressor,en-d
is additionally compressed to theinitial pressure and
is then again directed into.the~coliim-n for further~or.e
extraction. Thus, the extraction process was effected
with a continuous circulation of the gaseous solvent.
On . accumulation of the raw ozokerite in the separator
it was transferred into the receiver where it wasmaintain-
ed at atmos,Dheric pressure by means of a'throttling vaive.
Thereby, gas separated out from the raw ozokerite vi 'hich
became dissolved in it in the separator in a quantity.,
corresponding to the respective temperature and pressure;
this gas was removed into a gas containe:~. The
characteristic of the ores which were subjected to such
extraction are entered in Table:l. 1 The:ore was~charged
in the collimn in the as-delivered state Ity-ithout additional
breaking up or drying, it consisted'.of a~,mixture of
pulverised particles with bits of~valriousi dimensions.
between,2 and 10 mm. The extraction of the~ozokerite~-
from the ores was eff6ated by meanslof propane-propylene
fractions the composition of which~Is entered in,Table 2
Card3/4 I
which also contains 1r)formation on the conditions of the

I IN
86439
q
5/181160/002/011/026/042
77 0 6 00 I'> 412) B006/B656
/0
AUTHORS: Sergeyeva, T met and: ~helykh, Ae I
TITLE: Electrical Properties of the In 2Te D.ef e.o' .-;type, Semiconduc-'
tor
PERIODICAL: Fizika vVerdogo, tela, 196o, vol. 2, NoA.- 11 :pp. 2656-2071
TEXT: The authors give a report or the results obtsi,ned b~k :in.vestigat,ions
of the electrical properties (conductivity4 thermo-emft, Hall effect) of ihe
Te semiconductor which has a high concentration of lattice vacan 813LI,
I
n,,
Nntrinsic" deiaots - cationio vacancies) and uause &.disturbance of the
periodicity and a distortion of the'potentiail rield of ~ tho~: crystal. They
greatly affect the motion and scattering~ of carriersland p~hononB. The'---
-type seinic6nductor Ii ni ;i he
authors chose In Te because this defeot es i
2
middle of the isoelectronic series AgI - CdTe - InSb a-Sn1whoae elelotri-
of tWS
cal and thermal properties are known, and also because the structure;.
i
compound has already been investigated and some ind cations an to the ar-
rangemoant of cationic vacancies are available; thirdly, data on electr io al
Card 1/ 7

86439
Electrical Properties of the In Te Defect-type S/181 60/Co~/311/026/642
2 3
'Boo6 B056
Semiconductor
r; hile-
photoconductivity as woll as optioal:absorption a e available w
there are no data on galvanomagnetic, thermoelectrical-and~':thermal proper_~
ties. In Te was synthesized from the elementary components in quartz:
2 3
ampoules by fusion at 700-750OC- As shown by.A. 1. Zaslavski, and V.iM.
.y
Sergeyeva, this compound exists in the a'- and P-phasea, the latter being
0
stable above 550 C. Some properties of these two forms are.given in T
1. Fig. I shows the temperature dependence of the electrical conduotiTity,
of-stoichiometric a-In Te In the range of -70 - +400.C there is intrinsic
conductivity; the inclination of the straight line logo . f (1/T) does': not;:
change up to melting temperature (66 OC).- Pig. 2 shows the: irreversible
7 0, - I I - II
C in
change in electrioal conductivity by beating up to more than 490-500
r (1) or by continuous evacu ti (2). Fig- 3 shows'the change in elec-4
ai a on
tribal cunductivity in the P-* a transition. The HalIeffect was measured
ion
With direct current and in a constant magne Itic field,using~a compensat
method. Fig. 4 shows thi Hall coefficient R within the range of intrinsic
conductivity as a function of temperature; the diagram also contains th~!!
mobility as r. function of temperature. Fig- 5 shows analogous diagrams
for other specimens vith.different degrees of orientation. Also Fig.'6
Card 2/ 7

86439
Electrical Properties of the In Te Defect-typ6 B/181/60/002/011/026/P42
3
Semiconductor B006/BO56
shows a and R as temperature functions of stoichiometric In' Be within';
2 1 3 7- t
the range of intrinsic conductivity, the degree of ori *entation risiagjn
the Sequence 3, 20 1. Also the thermo-emf, a - W/T),'is a~s traight :'line
(Fig. 7). The numerical values obtained for the.paramet ere 0of hig4-purity
In Be are given in Table 2. The forbidden band width at 0 K.was deteimin~d
2 3
to be 1.12+0.05 ev. Furtheri the impurity conductivity was!investigated.
It could bT shown that Bi impurities induce n-typej and iodine p-type*
conductivity, whereas other atoms (Mg, Cd, Cul Rg, Sbt' Sn I bi i ~ Si, aild Go
in-quantities of 1 at% cause no impurity conductivity.' Fig*: 0 shown
logcr - f(I/T) for In Be with 1 at% Sb, Cu, Hg, and Sn (pa:~allel stra~ig~ht'
2 3
lines). Fig. 9 shows thelemperature dependence of o,.R, and u n on n-types
in Be and Fig. 10 shows the same-for p-type In Be !Furthermore detail;
2 2 3
of chemical binding are discussed (Scheme, Fig. 11).:The refractive 1n'*dex,
n, (measured by M. I. Kornfelld) was,found to be 3-4.�bi3 f or: X = 2.2: V,_
and the dielectric constant, E , was equal to 16. The results of the'se
investigations are discussed in detail, especially with respect to mobility.
..On account of the carrier scattering cationic vacancies, the mobility,
Card 3/7

86439
Electrical Properties,of the In2Te 3 Defeat-type S/181/60/002/011/W/0421-
Semiconductor 'BO06/BO56
III IV mut
in other semiconductors of the group A B, ~;'see table) is oh.
2
smaller than in neighboring isoelobtronia.binary compounds'of perfeo.t;
ivi detemperature ~ra go.
tructure. The carrier mobility is constant within a~ n.
whtah is explained by the predominance of scattering by elec.trically.
neutral cationic vacancies. V. A. Petrusevich, I. Z.: Fisher, ~V. N. Bogovolov,
and A. F. Ioffe are mentioned. Ye. L. Shtrum.' is thanked for chemical di-S.-
oussions, and ff. F. Shvartsenau for help in measuremehis. There are
11 figures, 3 tables, and 27 references; 9 Soviet, 9 German, 4 US, 1 Dutch-,
and 3 Japanese.
ASSOCIATION: Institut poluprovodnikov AN SSSR Leningrad
(institute of Semiconductors of the ASIUSSR', Leningrad),
SUBMITTED: July 15, 1960
Card 4/7

86439

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4vid. smpWoolft kowk1w vic4 at Ae_ as a &jndim a 1,
W tk* ft#* smolvit t r4 0
:0. Is owmiA bwwevw. tbak dw n. at GA wall
APAdW Of =-d. bw due evotWj I* totatokkawnt of With 0. 'Tbt W1611AUAIR, Of &W k1l h I Ilt 4U4ttWjvWw
at m* =-1m" VIOL -M. +.Ii:i -61.,-14
OVA. bovemast "OhN too sod kW of unk".
OIW a" I M - led b Obs" of thq stmoms dwo, #a O"th 41W d#Cay"WAS In hiltmou-MV4510410
F n4W
op beitbrardwadMIX 'oa)WA*AtwR m4 N=tw Leuvp( Ilk bugno I
whW with 4(dkke. coot.) - 10 wkj ipsi-mbilme.urviok Uchi,i
's Am-om.- &4"s - 10-0 ow.. aw wkk a a Ift I"*, Imotarm" J41 (A - I,W. 't dicW4144 I. Abw a
t4lo . - full wt. J'9 4PMMIIAWA gftkigy 0 6% Wool. a". true at 0 kwW 4, , h With A SUVOtOr 4. U; toolt,
0 - Ndt to - AV./#wt,. *hav &f. awl p an meuwW W In fornow doo- to VdAbliShru W1014 ft dUMMOR Of M 1AW'.
9-codw S& b"Pubes. &W a It taloom, kow da, coW. Salloorto tot.0*04"m I
HO COMI. IN Ad S" WSOAMS. Ike 1, to IN$ ~~41 rob" of lit'W" Into oft. Ofterm:+30,
impubm 01 a h*..Stb auk *ammos hr 4% faitw; f$ M no tMelik"
e= up. mituo cwtolmmids to IN I
&V .b"W"m on a bw
the Pak iapphum-Wout-044-107 trip. of ;;~- i tin At :* r ad &I -C (a 1. AO- Ado, Wc=s 14~r"
bba". Foor In Okpolujim - vdth :4o- - 4oAlb - coulac to r Allo. 101010"All wo
96114 smed &at Istemb-of OQMI losock is 4e V. am to O'w faw" Ilemp. accowhis to 0 101' wwas " dim
2 1 Aw~lWvrs. U. ~ .-Ndho mom out. JS - 0.43 ev.- in U 'm- dou"wo &w =0113001
-wof
V., F. "d & M. RYTHM. JW. IM-U. cf. C.A.
mommommots to mom So -the temp. b am~:=x"t (')J* cv.; at 3U*.:r Ow I
CwO of a - 3 X 10-4 okv-ocm.- vcrpub~ ddkrmt walplas Packs x I - wd A 10
vskUtWo at pbm of orkdmWic Coo at I ait Into me. '.e WIN);,
imemsm orkh the tantp. qxpautliallyt I a
In rolav 1. IPA Yuktitiosyrith the tomp. IWA ......
as Is 1
tww for hr theontw6wis. 1:11 mur- a. 4#, ywits MAP

CIA
rke MI dwacw a
P1040100MAIWIky, V. P. Zhu" i" M .14
grad Phyi.-Tecls. 1wirr-Vamly Abw.,V*,A,
,and. of C040
241-4(1951).-Tht COUCIL14- 0-t tlw PW-
is of an impurity character, established by mvious C22d.,
ark (iW. 60. WOW; Zkmr, FAsw Tterd. Fit.
18.1321(111M). 19. MOO); 20, IMIM); C-A- 41-
4MU; ". 28429) MW Mfirtned by o4savations Of 0113"
anal Una (C.A. IV. W979) lbat. in the Vidaltir of $Jav fink
of the abmorptk-,~ bond at 0.63 0, the PWOVD"d- bwrftw$-
with'the Content of elms 0, Involves tM diMcWIY thati
in thk range. tbe abtarlztjou is atueb too higA to be at-.
tributed w the very small nu. of decho" an the k-upwity
11"Coor k-wels. This difikwltY It MCIVOIJ. wilbout C
I of the previously awatmad Sane scheme. by
abwukmtwn
fro= the inapurily
attributing the tMM90011 Of tlactnMA
kvd M to th, cq"dWtJCM t"c, &K ta direct actw a the
light quanta on the fralmety attlaw, Wt to &KOWI&M
sbsmvdqn of light by the main crystal kuke. Tk cidtoo -
thu odulml t.4 eftliff MMUM OF raset - looked
jmwly. center " trunindt, its caM97. th- WOS an
EIKUM from the impurity level to the cooductiols YOM;
this constitum a son of "Mitan eoaWw of tho 2W kind."
At low tC= the Comm. of electrons I* M h StUall. and t'
brw dDly all the excitom will matubbar. -d the
twC quantum yield will be truall, At a suffocintlY,
Irmp,. be no. at electrilot, to M will lie high. and\
iletcall all I i~4tons'iiiu ilia in OA10to1w Oi kile Ailig -
in
M, WU a Masi quantuas ykid. - U the tw~ P
of earitatis l"locid in UMC Val, Per Mait *7 1,
lk*W to OK Hoist tivargr bf ilbmarbtll, .4 . on".
*6CM the
radar tip".S46 kke 'exC404: Yield. With V, and T,
dc"xh;ff. MP., lh~, "leatt life, of the ncitoo unill i callbiiM e
of The 2nd kind not$ a rr"hInation. and at w.coom of
looked I -vurhr atom (eketrou In Af~ V -~ velocity'll(
Ow excil . I - C3 as aectia" for tw collision b"
IIMV: 1-~! t4will lit? in
recorabilnropla slat &&-Jmt of the 2ad Mac# aw s~gajkzjlt
il r - +~ ~r,*), and I be: am P, of excit*4 V&CV(j;4
in fliflaggle"ratis Into, the cotcludion awe is h
a), Wbere 8 -,1 (rlr* ar dually #L
From the kinetic w-b'kmA# +
M thi
kveb Ware mevigabir, anti the pbatocomi. laoru"r bit!
I jkL.. t
inn tho otmrnl quantiala yinid ii found it - (W2*14
+ 4), wbM a - Own, of jk I"t. haki- At low tetirp...
xqCs. and 0 - ("1s)a ~j 1141,, *L"V%XL &I h1kh tfgnk%~,
W" is can C;Q 1. 0 tvpj - coust. This ~ temp. de-
p!adeft" of A hi Ill wCeamt witb previous obicrvm~n..
live Uwe "lechaniun Of p1loloc'M4. way buki: in alwi
111didt Crystals. and the Internal pbotockc. e" my be
contingent an collisims of the 2nd kind bctwtm Cuitiml.
and lmlmd F "nten. It W not ablevtd lit ardittuy
tcatias, la, tbot it-lion of Ik, kbiorplian, bqt stmtM o"car
an "uttantout Illuminathin with the %mvt l"t
ktb of The
IN. 11M

I IZ~
'. 14,
4

!i
I p;v
, t',7

IT
Z-valk-InIcarrs, V. P. ZT~
-.;!,I --.rc mvic- Iilmd m mc, alethixt Li sug-
Vs~_j fQr
smic !tr-vut,~b aw
~w;lilkr with m - d;4ut:lm*e ihrrjtt ;A
VASQ.
77
io 1:
7 t!_:

HIM

USSF,,Physics Elentrical properties FD-3103
Card 1/1 Pub. 153 2/24
Author DIU20. V. P.~ Regel. A. R.
Title Electrical properties of &Uoys in the systexn.Ni.re-NiTe2
Periodical Zhur. tekh. fiz-, 25, No6 (june), 1955, 9781983

Abatract
The authors.investigat* electrical conducti-vity, :Lts, teme,-ra ure
t
coefficient thermoelectromotive force, and temperature.conduc-
tivity of the system of alloys with composition froin NiTe to,riTeo.
They note that the problvm of clarifying theirelation between~
electrical propertien of chemical compounds and tlieir.crystallo-
chemical characteristics is presently a pressing one. They a6-
knowledge helpful discussions with Academician A. F..Ijoffe, arid
help of scientific associates V. M. Sergeyev and Ye. L. Shturm
and laboratory assistant V. M. Medvedev. Nixie references.
Institution
Submitted February li 1955

.............. . ..
9(6) PHASE I BOOK LXPLOITA,TION- SOV12506
Zhuzes Vladimir.,Panteloymonovioh
----------
Poluprovodnikqvyye materialy;, elementy po,luprovodniki, I(Sexii-
conductor Materials, Elemonts of Semiconductors) Leningrixd,
Leningradskiy dom nauchno-tekhnicheakoy propagandy, 1957,~
101 p. (Series: Obshchestvo p0 rasprostraneniyu politiches-
kikh i nauchn)rkh znaniy RSFSR, Soriya "Poluprovodniki," vyp.
17) 15,000 copies prlnted.~
Sponsoring,Agenciest Akademiya nauk SSSR,.' -Institut polupro,..;
vodnikov, and Leningrad. Dom nauohno-t~khnicheskby propagandy.
Tech. Ed.: D. P. Freger; Editorial Board': A. F. Ioffexi,Ac~dem-
ician (Chief Ed.); M. S. Sominskiy,, Candidate of,Ph~61cal and
Mathematical Sciences (Deputy Chief Ed.:'); Yu. P. Mas'Iak6vets,-.
Doctor of Physical and Mathematical Sciences; 0. A.!Smolenskiy,
Doctor of Physical and Mathematical Sciences. S. S.'Shalyt,,
Doctor of Physical and Mathematical Sciences;, A. R. ~egellp
Candidate of Physical and Mathematioal'Sciehoess- V:; K. Sub-
ashiyev,, Candidate of Physical and Mathematical Sciences,- K. A.
Shagurin, Engineer; and Sh. D. Achkinadze, Engineer.
Card 1/4

._-fifififijjffi~111 III MY
Semiconductor Materials; (Cont.) SOV/25,06
PURPOSE: This book is intended for engineers and technologists
who have occasion to use semiconductor materials.
COVMAGE: The book is 17th in a series of A published,by Lenin-
gradskiy Dom nauchno-teknicheBkoy propag andy (Leningrad House of-
Scientific and Technical Propaganda) aind'the In's titut: Poluprovod.-..
rlikov AN SSSR (Semiconductor Institute, Aoadem~ of Scienceso USSR)
undex~ the_general title, Poluprovodniki.(Semiconductors).: It is
also the revised and supplemented second:edition of an:iBsue en-
titled Poluprovodniki i ikh tekhnicheskoye primeneniye (Semicon-
ductori and Their Technical Application)i This book deals with
the semiconductor properties of elementsand:'gives bao1c data
on their structural, eleatrioal, themoelectrioal., galvanomag-
netio, and optical properties. No personalities are mentioned.
'there are 104 references: 44 Soviet, 56 English, 1 Swedish and
3 Geman.
TABLE OF CONTENTS:
Int'roduction .3
Card 2/4

11R1 11111J jj 1111 11,11
~Semiconductor Materials; (cont.) SOV/25o6
:Ch. I. Chemical Bond in.Semiconductors 5:
Ch* U. Elements of the III-B Subgroup 10
1. Boron 10,
Ch.-III. Elements of the IV-B Subgroup 12'
1. -Diamond 14
2. Silicon 16.
3. -_,Germanium 37-
4. Germanium-silicon alloys 65
5. -Gray tin 67
6. 'Silicon carbide 70_
Ch. IV. Elements of the V-B Subgroup 75
1. Phosphorus .75
2. Arsenic 77~
Ch.,V. Elements of the VI-B Subgroup 78
1. Selenium 81
2. Tellurium
87
~Card 3/4

r U 1. 11111 HII 11 1 1111 111111 If IV I I III &EIIIII. III III I I III I I I I III I I I II I'l Lit I I Iug IF. I I Ws I H -I I till IM I NI I IM I] Ul Is I ITIME I Iff 11 Ifil I
1141 Z 6
11 tat lip llummml
-A Lu"-,a,-,lu y -ULM IL 9
d, F
TT I ;lIMIllql-I;ll;p d th Llk;i,
-j
111111 1. 1 1 1
Ohl' HIPM-1111 '4LIlp i 4E. li~ I I
.Off til''ll'Ma,

3
i~d
NIP H
art, V
I PA
C.Ao
will
q*o:
fill Rill,v;
ol, toll)( 'all
''kV
5. i
I-Kill
it 1F P-
44
It,
04i
III lilt
it,
All.
: I . . p.
it
j. ifi 114
AUNI :F!
Li
-fill

slows IV
di
i'tr.1,11111 fir, Sim EHIE
fill
-ii

111V HIT 11F111HIMM111111 M Rill HVI U
-USSR-/-PHYSICS GARD-1-/-2__PA --1992-
'AUTHOR hzE'V.P.',PIKUS,G.E., SOROKIN,O.V.
PITLE On the Problem of the Influence exercised,,by an Exterior Electro-
static Field on the Velocity-of Surface Recombination in Germanium.
PERIODICAL iurn.teohn.fis, 27, faso.1, 23-.29 (1957)
Issued; -2 / 1957
Experimental method and results: The velocity of surfs~ce recombination was
measured by the methods developed.by O-V.SOROKIN, Zurn.techn.fis.26,11:0556)._
On this occasion the effective diffusion lengths L were experimentally-, do-
a
termined, and from the values found in this way the velocities of surface.re-
combination were computed. Investigatione-were carried:out with rectangular
plates made of monoorystalline u- and p-germanium. The'upper boundary BurfaG6
of the sample served forthe mounting of metal probea:~phosphorus bronze for
n-gerctanium and tungsten for p-ge=anium. On the upper boundary surface of
the sample a rectilinear.stripe of - o,005 cm widthq which was vertical to ths,
longitudinal axis of the sample, was illuminated. A mica plate which was coated
with silver on one side and had a thickness of from 0,0022 - 0,0030 cm was
pressed or pasted on to the lower boundary surface. An elec,tric voltage of up
.to 6 kV was applied to this silver coating. The block, :scheme of the measuring,
device is shown in form of a drawing.
I diWam illustrates the typical curve which is obtained on,the screen of the
ozoillograph by bringing #robe into contact with the sample. When applying
an exterior electric field to the sample the curve partly changed its:shapep

p 1 1111 jil 10111, BII
fasc.1, 23 CARD 2 2 PA -~1992
Z,urn. o 2, -29 (1957)
apparently because of various transition processes in the radiotechnical, do-
irice. After less than 10 see the curve again assumed its previous shape
which indicates that the velocity s 2 of surface recombination on the lower'
boundary surface is constant. This constance of 02 was,observed in connection
with all methods of working the surfaoe. A -ftrther diag:ram shows typical
ourves for A p - f (z), where - A p is the zoi~.neatration 'of the oh airge carriers
which are not in equilibrium.
Conolusions: At steadied conditions the velocity of the surface recombination
not change u 'der the effect'.ol' 1
of the current carriers in germanium does n an
exterior electrostatic field. This is true up to concentrations of.
1013 cm-2 of the current carriers induced on the germanium surf aoo.; Con-I
duotivity of the sample on this occasion remaiz~v practically: Unchanged.: The
induced current carriers essentially fill 'the l,urface levels:? ~their dinsity
13/0M2.
Is considerably more than 10 The outer levels play nolilmportant. part
in surface recombination which takes place on the interior levels. Xn4emi-,
conductors there apparently are several interior levels'wat different heights.
INSTITUTION: Institute for Semiconductors of the Academy of Science in the
USSR9 LENINGRAD.

XUTHOR
'VITLE
ZHUZEJ V*PO. PjKUSj G.Ye. SOROKIN, O.V. 57--6,3/36
The Determination of the Surfaoe Recombination'Rate by 116ains of a.
Change of Semicanductorf Resistance in the '%g,,etic Fieldi,
(11etod izmer-niya skorosti poverkhnostnoy rek=1b'.natsii po ism6n-
eniyu, soprotirleniyq~ pol-aprovodnika v mag.,,itnoa pole _Ruiiain)
PERIODICAL Zhurnal Tekh.,Fiz.,1957,Vol 27,,Nr 6, PP 1167-1173 OJ -5 104
A3STRLCT A now method for the measurement of the valocitylofeurfade re-
combination is described. It is based on the dependence o'f the
resistance of a semiconductor sample in a~;magnptic field on the
'recombination velocity on its surfaces. Tho results of,experi'Pen-
tal chekings of this method are given. They agree well w1ith theo-
Tetical predictions; i.e. they fully prove the theoretical final
conclusions mentioned in the work of one of the author's (d.u.
Pikus, T,M6,Vol 26ppages 22-50) with regard to, the depei'494*oe
of the seaiconductor-resietance in'the magnetic field on'the.1ve-
locities of the surftee-recombinations,the voltage and the fre-
quency of the electric field, as well as~on the voltage-bf the
magnetic field. The method presented can be used for the~~investi-
gation of the influence of an exterior electrostatic field and of
the outer medium on the velocity of surface recombination6 At pre-
sent such experiments are carried out and will be published Is-
ter An various works.
(1 table, 6 illustrations and 3 Slavic referencea).

AUTHORS: ZjMzej V. P.# Taidillkovskiy -1. M.,
SO-V/57-581 4/37
Bartnitskayat S.
TITLE: Thermomagnetic Phenomena~ in Silver Telluride (Termomagnitnyye
,
yavleniya v telluride seiebra)
PERY60DICAL:. Zhurnal tekhnicheskoy fi'ziki, 1958, Nr 8, pp. 1646 -i650t (USSR).
ABSTRACT: This is a study of the Nernst-Ettinghauenlieffect, of'the;
thermo e.m.ffp of the electric oondu6tstvity and of the,
Hall-(Kholl) effect in Ag Teand AgTe in the.temperatu Ie interval
1:~ ~'F- -
0
of 12o-6oo K. The measuring methods are described in;referience
5. The nature of the variations of the temperature d6pandence
of d and R agrees with observations made by, Appel(Ref 8).
Diagrams showing the temperature dependence of the dimensionless~
fields of the tranav f th 1 Nernst-
ol e 6ngitudinal
.Vrae an
'
~
r-
Ettinghausen effect and I respeciivelyp and the.te
mpe
k
ature coefficient a of the thermo e.m.f. are given. Tlie~
'of ~ at temper-
negative sign and the great absolute V
alue

Card 1/4 ,
,
y
atures below 2000K oan be explained by the.effect of.phon6nL

Thermomagnetic Phenomena in Silver Tellurid* :SOV/57-58-8-4/37
drag C'.~-Thls. indicates a.oonsiderabl~ 'affect exerted
x
by the.pbonon'drat upon the 16njitudi6al Nirnst-,Et-cinghausen
effect at low tempe Iratures. In the ra6ge of 200-4200k:
> 0. about as T 295 and ~ence.als
y va ries 0 u it
is assura~)d that n 0 that is to saythat a carrier soattlerirle
on acoustic low-frequency Oscillation's corresponding to a
covalent type of binding is prevalent. The:relation I a-JT-295
can be explained by a multiple phonan:scattering of the
carriers. Around 4200K the field decreases marke dly
and changes its sign. At a further temperature-rise of up
to T -`4900K it first increases again, depreasing su*b-
sequently and passing through a minimum at-T::Z::b 5500K. The
jump-like variation of A occurs at:a temperature near the
fly
phase transition temperature. The inversion*of the signin
the longitudinal Iternst-Ettinghausen: Ieffect. in the point;of
phase transition undoubtedly indicatead change in the type
of binding. The negative zign of above.4.200K indicates
Card 2/4 that a-Ag2Te is a semiconluotor with,a pre4ailing ion Ibinding

Thermomagnetio Phenomena in Silver Telluride SGV/57-58_46~_4/3,7
the Debye temperature,of'which is less'than-420"K. The.~
as not conv: no n
theory of Howarth-Sondheimer (Ref 15) 7 f-gly
substantiated bj experimenta.-According to the opinion~ofl
the authors,it is unsuited for the computatidn.of the.
parameters of semiconductors. The section of-the thermo eLm.f.
versus temperature curv,e~shows a peculiar course in the range of,
high temperature. a is p Iositive at T'64 3950K,~ reaches ~ maximum
0
at 490 K (320pV/degree). At a further.rise.of temperature,'
it decreases a little. This behaviour;of a(T) can.be,explained
by the.assumption of.a superposition of the eiectron~thermo e.m.f.
by a relatively~great thermo e.m.f.:ca~used,by the mobiles
silver ions(Ludwig-Soret.-effect) at high temperaturei. The-
experimental 'results obtained from AgTe are given in short.
The electric conductivity and the Rall-(Khoill) corstant of
AgTe vary continuously, whereas R decreases with a rise
temperature above 2500K,and d inareas'se, in! the same Cemperature.
z
range. Contrary to evidence obtained by Appel-I inver.searit
sign. The modification of the sign in the Hall-offeot, at':a
tempera:ture rise suggests a transition into the range of:,
mixed conductivity. The repeated inversion of the sign(from,
Card 3/4 minus to plus) at 4550K is apparently determined by:the Ludwig-'
q. i

ThermnmptD-nAtin PhAnnMATIA in Ailvar MalliiriAa qnV )1;7-9;.q-A;-A /97

~AUTHORS: Zhuze, V. P.,,Kontorovaq 2. A. ~Oyl/ 157-58-,87,2o~3
TITLE., Correlation of Strength.and of Beat do'hductivity of Non
Metallic Crystals (0 korrelataii M02U6 tveridostlyu i tieplop'rovod-:
nostlyu nemetallicheskikh kristallov)

PERIODICAL;
Zhurnal tekhnicheskoy fizikip 1958, Ni 8, P.P. 1727 -;1733~(USSR
,
ABSTRiOT: This paper presents- a5cbmparison of th: properties of_.Ahe~
group of ternary-semiconduct'ar compounds with the general;
formula ABX f and with a chalkopyrite;~!:structure exhibiting
the properties of such non-metallic crystal
s. Such.crystals
'
are produced by'the elem 'ents~of the'IV-B column of th6 periodic,
s,.ratem and by the binary compounds of an AIII: By type's imhich
e
ahibit the same covalent binding anCthe same,lattice st!ructure.
A comparison of the data bearing on the strength and,the hriat
conduotivity of these three groups,shows that the micro-
sbrength~ffl and the heat ~oonductivityr of these substahce's are
correlated in a definite! way.' k deoreases as H. On thin other
hind, H showe a definite decrease with therincrease of
interatomic distancei Such a correlation between H a4dw~
Card 1/2 however, is also found in the halide: compounds of alk~ali:metalB.l
-T

.............. ... ....
Correlation of Z`;trength and of the Heat conduct ivit 5
1,50V/57- 8-~64o/37
of,Non-Metallic Crystals
although theee'-dompounds'exhibit a differe t 'type of ~icheml; Cal
n
binding, mainly of an ionic kind and a_ different crys'~tal
lattice (N&Cl structure). The considerations Goncernin~g this
correlation advanced are:by no meana:intend6d to be-&
consistent thojory.to these phenomena* The transition fr omi,
li,;ht to heavier elements or Compounde~~ in the homolo&Lts
se'.ries in question (inorease'of 11) is' accomp~'ani'ed by a 1;
reduction of the lattice'energy U and an increase of~ bhe
0 ' I
lattice constant r o As specified,by formula (8) for.tT~the,
hent conductivity gust de 'crease systematically in accolrdantle
with the experiment, Since$ however, this tiansition is~alillo
accompanied by a reduction.of the coefficient a of the~~quaiii-
elt.stic binding, which determines H a~definite correlation'.
between R and K must exist# There are ~ figures, 2 tables?,:
and 6 referenceat 5 of which are Soviet.
ASSOCIATION: Institut poluprovodnikov AN SSS11R lening-rad (Institutel~of.
Semiconductorw,AS USSR.Leningrad)
SUBMITTED: Dec(aber 12, 1957
Card 2/2

Q z. E.)
AUTHORS; Zhuze, V. P., Sergeyeva, V. M., Shtrum, Ye. L. -2-3/32
57
-tITM. New.-Semic3nducting Compounds (Movkye poluprovodnik~ovyye soyedineniya~`.
Ni ~2 pp: 2 3-23F6 (USSR)~%,
PERIODICAL: Zhurnal Takhnicheskoy Fiziki, 1958, Vol. 28, 3
ABSTRACT.* In the irrrestieation of binary semiconducting-compounds with the': general
stoichiomotric formula ABX2 the authors syntheti6ally~produced 4. new. t*om--
I VIII VI
Pounds of the,follo,~ing composition-,A B where A is eith~ri.Culor
J, asw xpec".
Ag., B Fo and X either Se or Te. All fourcompounds a.. to 1)6~e
ted, are semiconductors. The analysis of the natu~r'e of the chemicil lirv=
ndicates the -6 of ~ 3
kage in these compounds i possibili 7' asp _hybrie4zation
(mixture of valence states)~of the electron-state's in.the.,-rystal. . i-r6m'
the schemo given here is to be see ,n that'the~chemical linkageIin!comp ounds
of this t3Te probably takes place by means of electrons being in,the sta-
3. and AgFeTe were pro-
te of sp -hybridization. CuFeSe2, CuFaTe2, AgFeS02 2
duced by e.irect melting of the components as well a& ft-om. corresponding
binary compounds (which were previously produced~by a direct synthesis
of the coriponents), The radiographic analysis (performad by R. A; Zvinchuk
;A5
in the Latoratory for Radiography in the Institu~e' for~Semiconductors.!:
Card 1)4t-, USSR)proved that the samples were monophase. The".east samples of,ftFeSe 2

ilium
New Semiconducting Compounds. 57_2_3/32!~
and AgFel?e2 were more closely examined. The photographs were taken in thet
case of YeX -radiation. The roentgenograms were indicated under.thb asa~
sumption of a tetrao-onal-lattice symmetry. The great: deviation of the
-1 eal rorithe chalcopyrite-structure,
c/a-valves from the quantity (c/.v' 2), id
as well,as-the occurrence of.indice.s.of the tyke h +'k. +. 1 - 2n +~ 3-.'(for-
bidden for the spacezaroup Dia ' I 42d) exclud6s: the; possibility to ~ucri.w ~j-
2d
be to Uese compounds the fof the chalcopyrite-structure (to which.
type-
the analogue of these compounds AgFeS,,belongs). The volume relation of
the 6lerientary cells in AgFeSe and AgFeTeq (dementary cells),agrees with
2
the relation of their molecular veis;hts and the' relation of the third,po-~
Wer of f;he radii of Se" and Te4-. This can dnjiy irdicate a similarity
'with the
of the ohemical linkagre and an exact aGree-ment'of the structurOs
conceptLLons from the theory of the densest packine.'The mel',Ing tempera-
tures T,neiti, the microstrength H in ke/ma, the electric conductivit in'
ohm cm the Hall constant:R in cm3/C and' the ihermo-eleotromotive
force a in 66 V/OC with regard to Vb for all compounds, were determin6d.
For several compounds the activation-energy of the 6urrent-cairiers, in eV
was determined according to the.dependence of,the B611 constant on tempe-
Car' rature. It is shorn that the compounds (which,'were investigated here)
A

New Semiconducting Conpounds.
57-2-3/32
III V
like, those of the A ..B type in the case of,ja deviation of their~'comw
position from the stoichiometry do not change the type of conductivity.
The elei-,tric properties of the AgFeTe -compound'-werei. more close4 investi-,i~'
2
gated hiiree In samples with a current_aarrier_~oncen'tration of.the order
of magaltude loll ce3 the mobility of the alec'tron,*~As higher than 2000
cm4/V.s1.-c. The dilatometric analysis of AgFeTe'~at 146-4oOC shows: an 3.i o
thermal jump of the volume Yfnich indicates the%ccurrenoe of a first-orm
der phaie transition, The modification of the4olume in;the phase ti- ans in
tion~ Vie -modification of the volume in the phase transition.is very high
and amomits. to O.,5501o. The activation-energy'lof the current.-carriers,
also uniergues i,-;reat changes,at;the-point of transitiont Until, the tran-
sition-bemperature 0.,28 eVO afterwards VA s58:iV11 Lt the.authorls
request P. V. Gulltyayev measured the course.of temperature of the ther-.
mal - and AgFe rys
conductivity in-the AgFeTe2 Se2"samPlesr' with large c tals.
The coefficient of thermal conductivity in both compounds at room tempe-
rature approaches OoOO7 cal/emodegre .asseco
There are 5 figures, 2 tables, and 9 reference7s, 5,df which are Slavic.
ASSOCIATION: Instittte for Semiconductors AS USSR. LenincTad (Institut poluprovodnikov
AIN SSSR. Leninarad).
C

BOV/57-28-10 1/40
-24(6).
AUTHORSt Zhuze V. P., Sergeyeva, V. M. Shtrumi,t! Ye. L.,
TITLE: Sem1conductor CompoundaTtth:thi e n 6riai 1,,';r' mlu~'Ia. ABX
2
~(P b ey Forklul6y.-OX
o1uprovodnikcvyye~,so edibeniya s 9 s o
2
PERIODICALt Zhurnel tekhnicheskoy f iziki, Val g$,,Nr 1,1,01 p~ 209 3 -2168, (USSR)
ABSTRACT: :Ternary compounds with the general formula ABX2 ;crystallize.in
a chalkopyrite struicture. ~,They were foa'nd for..the.fir t t ime:
synthetized by H. Hahn (Kfian) and coworkers Ili 1953 (Ref~l)-
f the- '3 _e'
In kBX compounds a,formation o hyb'r'id~~stat a and'the
2 q'R
tetrahedrio dia-tribution*of atoms corr pond'in*g:;to this type of
compound is according to the scheme.describing the formation
of chemical compounds.only possible iWi'such.'Oase's, where in-the
ip jof.- the
compound one of the~elemsnta of the third gr',ot* odio!
to
system, or-iron,,represents the trivalent elem.en.VB. Antimony-
and bismuth are incapablelof entering,such &~Oompound.~ Punda-
mental facts, a description of the method, and of thelaynthesis
are presented. Investieations. carried: oat in the X-ray labor&-
tory IPAN by.R. A. Zvinchak showed that the samples of, the
Card 1/4

8emiconductor Com,ounds With the General Formula, ABX SOV/ 7-~28-10-IiO
5
2~:
I III VI
gro-ap of A B ~ X compounds are all of'tmonophase com o~itfon
2. P,-
p
and a chalkopyrite structure. The compounds CuTlTe
and AgTlTe were for the first,time produced;eynthetica.~.ly;, The
2
I Yin V1
'd - 1.9'o of
X-ray analysis showed that ~A B X a, mpoundB are a,,
2
monophase nature. Cast samples of*AgFeSe and-AgPeTe r
2 2~we e:
examined more closely-with the help of~FeK radiation.: The
CoR.
AIBV X VI compoundat CuSbSe', CuMiSe , AgSbSej, AgSbTe 'AgBiSe
2 2 2 2. -.2
and AgBiTe also proved to be of a moqophas,e.nature.1ith6ut
2
exoeption the compounds investigated were found~to be!eemi.-
cor.ductors. In compounds with the~'ele mejnts oif~,the.V. #6up~ t he
,in the
cht-mical bond is very likely not realiZed by electrons.!
hy~;.-rid state sp3j but by electrons, th6.:gtate of,which,can~be.
expressed by a pure p-func'tion. Anoctahedron near-ran8elorder'
of the atoms is cheract eristic of su6h a band, as p-bonds"
lie in three directions orthogunal to dach other. The~crystal.
structure of the compounds of the V. group confirms the fact
Card 2/4 that the tetrahedron distribution of atoms distinctivia:O'~ s'p3

Semiconductor'Compounds With the General Formula ABX~,; SOVb7-28,--10-1/40
bond.s is not found in these.compounds.'W-ith this group~only~
the octahedron distribution is realized~ The,compounds,pr'oduced-~
synthetically are subject to the gefieral~ rules which, Mike it
poscibleto separate substances with int.rinsiol,semicondu~ctioln
from such with a metall io condtiotivity.,The deoision between.
theve two alternatives is b.ased upon the conception of;th6 pos-.
sib.f.lity of the formation of covalent bonds.,The,A B x
2 Pom-
pounds satisfy the octet rule by Kossel~,(Kossell) and the rule
by Hooser. (Mozer) and.Pearson .(Pirson). (Ref 19)i Finally the'
participation oftthe d-electrons of-th.e!iron~contained'in the
I Viii VI "d
A B ~ x2 comp6u,fids in the formation of thechemical bond An
in .he semiconductivity is' investigated:4 The~absen!~e of metallic
conductivity gives iise to, the asaiimpt.i6fi that the d-electrbne
of -.he atoms of the transition'metal a're.existing in ci~so'reet
states in these compounds andthat they'tform'a completely 00-
cupied d-'zone. It may be assumed that the gre~at distances Ve-
tween the atoms of the transition metal~in the crystal are:
hindering the formation of an incomplet6ly occupied zone. This
Card 3/4 problem will be thesubject of another, paper. A. F. lo ff e,

gillf U 1511 Wil IMINIIIIIII 1111011141 OR till' lilt 11 IIIH I III 111111111141 IUN![illBiji!illilll!IPIIIIIIII[Illlnntlh,liaI 11111

11 lilt I III M1.13,91111
-,.kand.fiziko-matemat.nauk,- GUSMIKOVA, YO.I., bibliograf;
BUBROVA, K.L. I bibliograf; ARON, G.M., red.izd-va; ~BOCHEVXR,
V#T*q tekhnorede
.[Scientific works on semiconductor electro nic in struments
(detectors and transistors); bibliogimphy 1943-19551 Nauchns.is.
literatnra po poluprovodnikovym elektron"m~prihiram (datekto'ry
i timmisiory); bibliografiia 1945-1955. M6sk-wa, Izd-vo Akad.
naul: SSSR, 1959. 326 p. (MIRA 12:8)
1. lOmdemiy&
_uauk SSSR. Inetitut poluprovadnikov*.~
(Bibliography-Trandstors) (Bibliograpby--Hlectronic instraments)[
(Bibliography"Somiconduoto're)

- - - - - - - I 11gowilr[IIIII] I i "M Hit I M It I; III I 11r, III I, . ......... ...

67395
-240), e4i(&~ ;SOV/ 61-1 9-'7A
AUTHORSs Zhuzo. V. P Pikus, 0. Ye., Sorokin,
0.4.
'
~TITLFt to~the
Application of the Ma netoeiiiation Sffect
Invc)tigation of the Surfsoe of Semiconductors

PMIONCAL:
Fizillca tverdogo tela' 1959,! vol. I't r 9, j! pp 1, 20
N (bSQR)

ABSTRACTs J
The-,authors,used-the''i4eth kof
surfs. a rb comb iriA tic
0 a
.
measurement by mea no ~ of the resistance Aingelof 'a semt
condactor. in the magnetic field to investigate th:e energy
surface structure .of german .ium. This investigation is rei.~
ported here in all.details. The method applied to measure
the surface recombination rate is new and.was,~introduced!'by'
the authors themselves. A.description thereof~iq n4h
give
references 4 and 5. The aim of the investigation under're-
view was that of demonstrating the-appii*atioh of this method,
with two samples of n- and p-geraanium being Used for th'a 'pur-
pope. Figure I shows.the block diagram of the. us~ed setup,. The
msthod is based on the application of a formula. describing
ge of a t n, -.la e
the relation between the resistance chan hi n
.
Card 1/3 sample in the magnotic'field H and,the:recombination rates a

67395
Application of the MagnetostAotion if f ect! to the SOV/j 17/31
Investigation of thit Surface of Semiconductors
1 2
2'A,
2 on their opposite faces sA Q R/Q 0
V a +8
2
where d is the sample thickness thei v'oltali" of !the main:~;
9
frequency th t f
vhich, is. incident , upon e.Anveatiga ed part o
the samplei is the resistivity without,. magnetic . field:'., A.Ax
0
an 6/1r, (1+b)(14yb)pn d
given by A ~ih re;~
W7 (n+p)(n+pbT :and'p deh.ot e the
equilibrium.conoentrations:of electrons band ho'es, /An ah d ,tu .
p
their drift mobility,, aen;~nd.Ap~ their Hall,.mobility,:and;
p
1 the length.of the investigated part of the sample. It4;ie
now described how it is.possible, by means of the instriiiient
+ II . I ,I
to obtain direct osoillograme reprodUo lnig. the dependence of:-
1. 2
the quantity -on! the:applied Ieldol~ Figures 9~5*show
such osaillograms,for the two.samples iniestigatedo whose,
Card 2/3 chaxacterietics, are given.i The next section discusses the IK

67395
Ap lication of the 11agnetostriction Effect: to the :;:.130V/181- -9-176
Investigation of the Surfaoe of Semiconductors
interpretation of, measuring results in deAailj~ the resulis
are given in the form of diagrams, and the nume~rical valuesi
are.jiven in two tables. The, method.described:"is very ex-
pedient for a quick and fairly accurate determination of:the'
fiela-bound change 6f a'., k.i V. Rzhanov,. 1. A.']Arkhipova', and
V. N. Biduly -(ReU12)-i'applied this.method to:investigate the
modulation of a through a 'n outer eleo
tri6 field. Their re-
,
sult;30 however', did not fit those by the"authdrs in two...
points. This is discussed in the final'part of the..paper.~
There are,10.figures, 2 tables, and-15 references-, 8 of which
are 3oviet.
A350CIATIONt Institut poluprovodnikov AN SSSR Lening'~d (I of~
ra
~stiiute
_
3emi-oonduotdre of the AS USSR$ Leningrad)
SUBMITTED: Febr-aary 16,_ 195~
_Card 3/3--

I titillf JU &ICA ii lim Ifflefin III Mull! 11VIIIIIII 11 HUM III r-1011111 1111111111111 IN 11411101 111111111111111M

;or w6h 4sfdl'ct m t im-c 6r 41.

lug 91 IILVI
MIN =,a= I IMP!
-- - ------ - ---- - ------- -------- ------ -
Ace-WSION uRt APW13500 S/0181/641006/002/00*435
--yatkovag, To. Del Zhuze, V Sorgeyevaj': K I
AUTHORSt Dev Golubkov, A V. I
Smirnov, Is As
tITLEs The thermal conductivity of Sm, P., and their simpl.echalcbgen compIounde-
SOURCit Fizika tv'rdogo, t
a elay v. 6. no.:2. 1964., 00-W
TOPIC, TAGS: thermaA conductivity, samarium,, praseodymiumli'tcha cgpn,, O'r7stal
1~ttice conductivit-,r,, rare earth
ABSTRACT t This pap-L~ stems from a lack of thermal-conductivity information:on
rare-earth compounda and their compounds that have been recently studied in
considerable detail for other propertlos, The Compounds studied (PrS$*PrSej Met
and SmS) were synthooized. from the~constitfxent elements by~~tho w4hod described
in Rare Earth Resesa-ch. (p. 135,p 223., Ed. by H. V. Kleber ii. Y.$' 1963.). anct the:
thermal conductivity was measured on the "All setup of Ye,~Do~Dev~qtkovaj A V.
Petrov, 1. A. Smirncm, and B. Ya. Moyzhes (FTTj 2p 7.38.# 1960) * Measurements on
Sm. Pr, and the indi,cated compounds were made in the ten"rature, inberval; 80-460K.
Card 1/2
V-

~j
k 1ACC. NRi --A 10,38 c
Fla
To
Zh -V Sha
oval A
:,:ORG:~.-.~ Institutei-:Of
a w dkov'r
emii nauk Ss
R)
till I- i~
TITLE: i~- Superconductt~rit~ ..o J'~
f
~Scm' MUrjjal.~
*3erimentallno-- -te6retic :A !~i ini r
.0.
13ril.
w:
lie
oz n YC J304
171?219
c~o'r 6 -t e '11311!
a olc~ ommet, *'r
C tic
c a.*
mag~-.tic field
_point,
authdrs- th&t- a C ith
-ABSTMGT: -The. -show- 6M4 I ILL:
T04'Ji:-&i9q r6dndubt6l Al
ar t~ the 11 r, Ir it
props IA33e.j and TA354j~ if
rece,htly-.- Yhey -also show that--,t -e-- gvVer-condtidtir) r S1 t6iji
e.
s- u-b- -s' t a- n- c ede-pends b Ahe tecbhology~' it )r atlo~ bib,
of: B" I , onnpit
pid ~r. i! c
eviation
from` th6 -std 6
--C.0rivos on c
-0t -th 0 t 4 Atfil um~-te bik
'A
was isynthesized f~roni ~the'- componei~ s.~,b E e Ri a
--proc;!,~~c --cle-isexibed In'--
o e 'ardehe "'Mye
ma erialy, Inorganic! Materials 2~ 116 1~
Pt i:'Oz te~te
li-,oreb;sed-1"i-om:previolli)3.y,~fusdd-:*AtiatI I "bt
~~nzd bt er Vr~v
-peratur tvo - omples ah -e 6.1,'.~Tlwco ea-
F.
-.tfiL'-- de-stru,~.tibn- of erc6n 'a itli6ej---b
ectively. Mgrielk--ic memswemeuts,h&ve:.sh6;wn t6t at: 1.1' he:
ne
=R-
1/2
_j!j

I III At I I J I 13111 V I II fir I It -i I Oki blqo In 1110 1 IF! 1,9311 kit
ir :,i
7r+-

17

0 1
it t
T`~
-i,7
rip
6 cO PUTAS-0,
-T~ACC-Iffi
Ty"
T
AMOH:
2aluzeil NO: hWq
ill 71 iji-
091.:~ institutd, -of,,,, 78emicondu+drs' SSSR' I Le~lzkraki~
ut
A
1~ SE
lift)
Aw
FTTM+ Rall: effei~; 6rysiaj:
41 do
_Su z Avordogo tela;~ VO,
JIM.
Ai_:!
j, 6~9
IV
M. ?IC -TAGS
CO _;_COMP .cryptai
sfq Ule b 1j I ~~cii i~Ti~~-_`-~1_,!~."!`
ity, -_ Neel'te#erab ire,-~ carrier ~Ae4i*.. crjatvAi de i t3r, Ch a
tal$.-~ Hall, mobility. w
Iill 71
j J,
ft
o i-ele co6du ty.~~i
I -T To chech . an- the - mec~is'm- f! ctric
-that exped~ _4: on. i i biL I
whose.6 MU6~:J.~:
MvLals, ondfictivIty Is- Uan-, e
-Wil ~authoxo measur
BLPch son-,model' the U-i ~ COO: Wqtle cry,oteilp
e4 t6i
ietb-- it t,
cc) d
-gi rpoi al a
J~q
s--v e-;In- W,
orm: 0
0
w 1~ wit i6d
fi
duiAivity w
wet ib fi
T_
of~23,900 e~-Hall effe t -'cov1d*,be! WISUrld In' ~t
t I
IN _ie~perat! Me 0 t 0'
ine
thdlfeellom I be--.-
I
(JO/T -1 2--~X) Abovi f
-A
iT
AI 4:::
11h
9

!11
J
t
L 2289846.':
f: q,
f7kil
:_jJ66666
o a-
b s- t strong incridasi, cai-rier dens ftl~ iiciviiii- ''t
in&', empem-
nduct vity, .1 Z
hd:'it
W Lne-, q
c r
I
th~ stal- ii ;;p, e a
~a ei,
_1~ ductor. )e
v -The domintMig-Aefects: iiLIA'e'-lat ii t
t ---
Iductivity et i9d 4hich ifi: a -
0 C OM ry~p O~Ve Ca
j I :'q
jTh
nized ii! ei -d'ata'; cAn b _-i iidci~ibed_. e. th
pigly and doubly 1.9 th
I-Pl"r-~of--quasi-chemical-pro~essiB~'~-,~hi,ch=leaci-,t"he, e cei~- fileiec
r ers in a ionic cr7itals' mde h issum that the-! e.
T- , e-.1 ption Xt - h les i.~.
f:
:.del)ends-on nO erlhe-.-L~mpem ure--r 0 e
ith t i6r -the idenpit~.~-f~~* I*g
noreases:
rid O.L
_.:~~m 6 Ud
..V
'0,
7-7 teriperatum. at Idgl' --t- C
_to
emem ura.s
pera urei.--.-and - ftIewhaV--"3.owexv' tb,-,n,- jr)tjj~
t d6
------------- -A *~
;Qf kelhom d6e
not contradict theliconclusidns'ofth6 existi~ ''t
11g. heory.~:df iidrd~ A,6is
C '10 th;
mol The dri t
-mo ilityz'of- a m ~Iure~s
per,
t~sjLned by the auth~ is i-Atat onal:.~medsur f - b6 '~~t
erWgM'V
th 10 t
is C10j; t~ th
in~,Co% e e- WI mob iorik.'arti_
SMI CODr mW9
OMM DV
2D/
06,
-j
T T! ;i
Cant.2/2
61

IJI) RDW/JD/JG
115n1-66 E',Tr W A!jft8/EWP'(-t)/ET1- c
ACC NN AF603B53T SOURCE'CODS: -MVO.'81/66/008/006/1761/17TJ
AUTROR: Golubkov,
-DbiYi "re. P. Zhu e,, V. P. Oergaye*&~ V. M.'; Smirnw..'
I, A.*
ORM, Institute of Simiconductors, AN SSSR, Leninp-ad (Institut poluprovodn ikov AN
SSSB
TITIE: Thermal conductivity of Iantbex= and its monochal~~en!tei
SOURCE: Fizika tverdogo tela.. v. 8j no. 6, 1966., IT61-1TTJL,~
TOPIC TAGS: lanthanitm,' lanthanum compound, thermal conduction, rare'earth 6etal:
cryntal lattice, the3mal emf, temperature dependence, phono''n scattering., electron'
scattering
ABS7RACT,. This is a continuation of earlier~research by the. authors v vt~6, 430'
1964) on the thermal conductJ:vity of rare-earth metals andktheir~com*unds,~ and is
devoted to a separa ...n of the'e-lectro'
V
pic and'lattice:covponents~:of the the~r~'con-
ctivity of La., Le~Tp "MaSe and LaSY( The linthanum monoclisiccgenites veii syn,
tesized from the constitutent elements by-a method described in'detail in the'
gterature (Rare Research., 223- Ed. by E. V. Kleber., !NY, 1961;,A. v. Golubkow
Irr aleip Neorgo mt. v. 2j, 7T., 1966) and were pressed into briquettes;at'high pressure
fOllowed by annealinj ;. The measurement apparatus was . described by* the authors - ear-s
Aer
(M Ve 2P Mo 1*)* The theoreticaLrxpressions four thewtwo thermal-,
Conduqivity -ccmonm its are derived. -mmhi'analysis of the expe Irimenta.137 measured
1i 2

ACC KR~ AP6026689 SOURCE CODE: UR/0181/66/008/008/2390/23947 -
!AMHOIRI. :Bogorolov, V. X.; Zhu--
of Semiconductors, AN~SS a (Ins it v
ORG: SRI) Leningra ut poluprovodnik,o J%X~
SSSR)
MTLTE: 7he mechanism oE,conductivity in rutile
SOURCE: Fizika, tverdo&5 tela* v. 8, no.8, 1966, 2390-2394
TOPIC TAGS: titanium crcide, rutile, Hall constant Hall effect
ABSTRACT:~ ~Setslof data on the anisotrwq of electrical conductivity -constant,
py Hall
and piezoresistance of rutile, obtained by variolus authors, .'are analyzed as functions
.of Temperature and currunt carrier concentrations.',The presently-decepted zone scheme
of rutile is inadequate to explain:-zhe cggregatd of~exparlmetiql daia'ov'er a broad tem
perature rango.~ If it 1z assumed that the current carrier concentration.is tempera-
ture independent above 1,1000K in,the samples iniri~~igated, thd'electrical,conductivity
and Hall effeat data may be described by the, equations of the mall Iradius polaron theo
ry. A qualitative estivate of a ulumbor of parameters from the,~ttheoriy also yields rea-
sonablo values. The authors thank M. I. Klinger and Yu. A. Firsov for valuable discus-
sions. Orig. art. has:. 2 figures.
SUB CODE: 20/ SUBM DATE. 13Jan66/ ORIG REF: 006/ OTH REr; 007
Card 1/1
..... ....... .

-W4 ':~J.;!~f I it I! t I: I I' F !!~!'V! U 1'_-~E~r!]Vpj A W; I '.1U.! I EN IR;",; U I 14111 1: 11*LW 4t~" i'4e" I tl I fl: 11C1 1:
jill
~ft tat
i!4
it tO
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ii~

-1