SCIENTIFIC ABSTRACT KORNILOV, A.N. - KORNILOVA, Z.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002201510004-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 9, 2001
• Sequence Number: 4
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

USSR
UDC 669.822,004.2
KORNILOV, A. N., KOVYGIN, G. F.
"Sanitary-Dosinietric Control of the Environment at Entgtrprlses for Extracting
and Processing Radioactive Ores"
Vopr. gipiveny truda na uranov. rudniPakh t obogatit. predprivativakti -- V ,;b.
(Problems of Ilygiene of Labor in Uranium Wnes and Derieftciotlon Fnterprfses
- collection of works), 'Moscow, Atomizdat Press, 1971., pp .103-10 (from
M-Metallurgiva, No 4, Apr 71, Abstract No 4r,26?)
Translation: The basic procedures for all-around sanil.ar,;-ilaiiimetric inspec-
tion of the external environment whicli are uned at efttwrprise-s for extroction
and processing of uranium ores are tnvestigated. Thes(i prooedures incJvde
control of the radioactive contamination of the territory, wtnosphertc air,
open bodies of water.and water supply. The bibliograpiv ha:i 9 entries.
1/1

IJSSR IWO: 621.315.592
AIJEKSANDROVA, G. A. , ZI.VADSKIY, Yu - I KORNIUff, .13. V. , and
SKVORTSOV, I. M.
"The Predominating Contribution of Oxygen to the Compenzation of
High-IResistance GaAs Films"
Leningrad, Fizika i tekhnika polu.Provadnikov, No 7, 1972, pp
1340-1344
Abstract: In an earlier paper coauthored by nowe of the writera
named above (B. V. Kornilov, et alt Eiziks i til-khn I-s poluvrovod_
nikov, 5, 1971, p 144) it was renorted that deop-level impurities
may participate in the compensation of high-re4iistiuice GIIAo films
obtained by gaseous epitaxy vIiea the reaction. voluwiq.~ Contairis cxy-
gen. Although the mechanism of compentation ratz-aizied unclarified
in that article, new experimental evidence is e0ducod in the pre-
sent paper to provide a clearer picture of the ;iuvchani.um and to
establish definite-ly the involvement of oxygen. She specimena for
the experiments were evitaxial layers of n-type Gaku obtained f1lom
the gas phase of the Ga-AsC13-H2 system at T = 'J'500 C, with oxy-
gen brought into the pystem. The reaultant maUtirial, with i~ re-
aistivity of up to IOD ohm-cm, waG depo3ited on semi-insulating
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A
USSR
ALEKBANDROVA, G. A., et al, Fizika i tekhnika riolu-provodni,!~ov,
No 7, 1972, Pp 1340-1344
GaAs substrates doped with Cr mid oriented alaJig fl,.te (110) planc?.
Curves are plotted for the dark cLxrrent iu the ftlas as a ftuic-
tion of the temperature, and for typical t~pectra oX .1-,hntocc~.-Iduc-
tivity and cathode luminescence, which ehow that the films Col..-
tain centers with activation energy levels Of ('.).35, 0.56-0.6Z, o.8,
and 1.01 ev. A full explanation of the compenoation mechanism as
modified by the data of the present article is,given.
2/2
- 35 -

ZAVADSKIY, YU. I., KOMMOV.-B-s-, PELLVIN, 0. V.
"Induced Irypurity Photocondmction and Optical Properties of Ser-i-insulatin".
Chromium-Doped Gallium Arsenide"
Lanningrad, Fizika i Teklinika Poluprovodnitov, Vol 6, N'10 5, 1972, pl) 9~13
Abstract: A study was made of the spectral dependence of Hie iarmurity P"leoto-
conductivity stimulated by natural illurInation, optic.iil ab~iorptiiin, cathcd,~
luudnescence and photoconductivity of senl-ittsulatin,- 111n1jium
arsenide. AlonE, WLh the cl)romium level of L C - 0.79.5 4duCE'l-1:11) volt.~;, 1.11 the
GuAs lattice there is a center with an activatton eneq.;y of 0.62 electrc,n
volts. The phenomenon of induced ArlNurity ph0trC0ndU(-t1%,,iLy Wth a
of -0.37 electron volts was detected under the cond[Oxmis (,,I" COUSLailt M-Itulal
illumination. The magnitude of Cie activation ciiergy of chrorlium, d%,!ti!rT.Jn(-d
by the peak cathode lutainescencp brimid at T - 77*K in elimtron vol.ui,
Ilie experimentally determined spectral dependeace of tbit.! i~-.qitirftv rib",01-13tioll
CmIlficient proportiount to the chmmium canccantrarion A.,1 comp.1rot., !"'itil L~7c
theoretical riodel of photoionization using,, an approximatJon of a stroa~! tiorld,
The explanation of the eNperimntal data Is preaented Iti Lerill Of local jCVC1s
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IJSSR
ZAVADSKIY, UY. I., 6t al., Fizika i Tekhnika Poluprovotinikov, Vol 6, No 5, 1972,
pp 993
withuut using the impurity band riodel.
The conplete text of this report can be obtaitied by requesting report
number 3333-71 Dep., 19 August, 1971 front the followLtig addxess: moscow, r,-21'9,
Baltiyskaya, 14, Division of Scientific Papers and ReJ*4xcncj'. Infomation of the
All Union Institute of Scientific and Technital Informption,
2/2
203

USSR UDC 6 2 1. 315. 5 9 2
Aleksandrova, C. A., Vil'kotshiy, V. A., 4 lfaxcllukov, L. V.
Skvortsov, 1. M.
"Anomalies in the Miagnitude and Temperature Wpeiieeiiro of the Electron ",ability
in Epitaxial Layers of Gallium Arsenide"
Leningrad, Mika i Teklinika, Poluprovocinikov, Vol 6, No 5, D72, pp 9,91-)84
Abstract: A study was made of Elie anomalies in the maltnituda and temierature
dependence of the electron nmbility detected in the epltax-1.11 1.1yers of n-type
GaAs which cannot be explained by the mchaniqw of scattering on the pol-ar
lattice vibrations, on ionized or neutral centers and t'ie spitce charge re-ions
of the micr6inhomoge nei ties. 'Elie anonalles ucre douil-ted in a ,%roup of
which was cliaracterized by low mobility at 3000K. The ftlr-~s were Il-rova fron
the gas phase in the Ga-AsC13-112 sye tert on setni-inSUIALE11F, GIIAI; BkIbStr~CCS
alloyed with chromium and oriented with rc6pea to the (R00) plane. I 4e~
characteristic curves for the momalous function it - f(1,) arkI the cathode
luminescence speccra of the Mrs wiC-i different mol)llitloii arc, platted.
The carrier co;icentration in the filtris at 30001, rj~asuiiptl by y3o Vi'ln der Pat:.;
method [Phil. Res. No 13, 1, 195P) was, 'I'; and 01c
ties were within the llniLs of 150 < li < 2000 Cul /VOIL -&econd - In tism
1/2

USSR
UDC 6211.315.592
Aleksandrova G. A., et al. Fizilta i Tekhnika PoluprOVI'hillikov, Vol 6, No 5, 1972,
pp 983-984
investigated ran,* I b%, 110 zoro
,e of 77-300"K, the electron con