SCIENTIFIC ABSTRACT SOLDATCHENKO. V.A. - SOLLOGUB, V.B.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002203120004-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 96
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 4
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

USSR UDC 669.245.0!S.44(083.8)
'ASYUK, 1. 0., BRUSILOVSKIY, B. S., VILKOV V. I., VORONIN, G. ~M. , YEGOROV,
AN L
P
'V -,-'Yl:
YE. 7E., YELKEN, 1. S., KLMOV, L. YA., KOVIROVA, YE. K0_',4TSL -WA -
, I YE. I.,
LYUBMSKAYA, N. A., HILENINA, YE. G. 11IMAYLOV, I. A
SIROTKINI, A. I. SPILITSIN, R. 1:, SHA"FIR0, S. M.
"Nickel-Chromium Base Alloy"
USSR Author's Certificate No 276418, Filed 2 Jun 69, Published 16 Oct 70 (frorr.
M-Hetallurgiya, No 4, A-,)r 71, Abstract 'No 41766P)
ni- CO:',IPOSI 1.
Translation: The heat-resistant alloy has the follow2i ition (in '0:
C 0.03-0.1, Cr 30-40, UT 3-5.5, No 2-4, Ti 0.5-1.5, Al 0.5-1.5, 'N,b 0.5-1.5,
Ce 0.01-0.3, B 0.003-0.003, Ni, the rest. Me alloy has increased heat re-
sistance and also the following inechanical and physical-cliemical Droperties
at 1,100': a B 8 kg/vim-, 6 65Z, (Y stress-ropture 1 kg/mn coefficient of
-6 -1 :
.linear expansion 15-10 deg , increase in weipht after 109 hours of heating
0.~) g/'-2. It is corrosion'resist
at 1,2000 in the air 4int: in a moist at-no-s-ahere
undef tropical conditinns, in sea vater and in the products of cor6ustion of
P 1111,;'M u I FW1,41 t MIMI I M11131Mr, -I _-Ar I-

u0c,
VJR UDC 539.26+539-432
KLCChI_TXlvr$ V. P. GRIGOIRIYEW, 0. IT. ,
, I C) I,
N. N. , TORCHUH, 11. I._ , and TIC11r. J-i,
OR _:, Yu. A.
"Preparing and Investigatin.- Germanium-S il icon 11-leterosystems"
-iev, Poluprovodnikovaya tekhnillra i rikroelektroni.t:a. No. 6, 1971,
PP 24-30
Abstrnct: Exreriinents are described for investi.l.
~--Ain, thL h--tro-
epitaxi,al rro-..,,th and quality of -ermanium -film-s de-)osite(i on sili-
cop. subtrArntes b:T a molecular beam iii a vacuum. TLa resu
-Its Qb-
tained by the8e 13,,,.--rjeriments are comnared with tliose fow.~(l ear-lier
in experiz..ionts vil.J-i Gle-Gal:.s aystoms_used r1lodel-- 0:~., 1~'ete:Z-0j'Lunc-
tions ,made of semiconductor -,,airs -...-Ith ve2.,y similar
ic parameters, such as Ge-Gatis, or ve--y diflerent Iaramet-_~rs,
such as Ge----,.. method of diffrextion ol I-asll- olectron.- in re-
flection wid electron microscopy, as u-cll as double crys'tLil c. c -
--roae try ~~_rzd 7.-r,,:iy topoCranhical pictures by the EorF-Farretl-
method are uze",,~. '-he temFerv.-tul-e of t-he ailicor, subs-U-1-F"L-'es v--:rica
from 240 to 8000 C an,-' t-he candens-ation rete from, 3 to 4000 TD,3r
second. The vacuum m-ai-ntsined in, the limit-- of 1 -u0 :5-10-~) =
Hg and the film thicwess var ed from tens of a L-sll
n troms -~I-o _~-_ns of
microns. Th-e authors are conrlected i-Ath the Sem-.4cc-nductor T_n C~ 4- J_
tute, Lill-, ra in 1", 11 A-Iad,_-%,r,, of 'Scienves.

OSSR~ UDC 539.26+539.234
KLOCHKOV, V. P., GRIGOR'YEV, 0. 'N., POLUDIN, V. I., SOLDATENK0 1% N., TORCURN,
N. H., TKHORIK, YU. A.
"Obtaining and Studying the Germanium-Silicon Heterosystem"
Kiev, Poluprovodnikovaya teklinika i mikroelektronika, No 6, 1971, pp 24-30
Abstract: A study was made of the heteroepitaxial growth and degree of per-
fection of germanium films deposited from a molecular beam in a vacuum on sub-
strates made of silicon. The previously obtained results for the Ge-GaAs
system. [A. P. K.1inenka, et al., Protsessy rosta i rtrulttiLra-,ionoki.-istaL!i.clies-
kikh 1110vev P_01Ij)ravodnJAov, Pai:i -I, Kauka Pref;ia, *Novooibirt;V., 47.9, 19661 are
presented for comparison. The in0cated.sytLems were i~sted as Tfiodcls of hetero-
junctions in which the semiconductor pairs are either very close with respect
to crystallographic parameters (Ge-GaAs) or these parameters are essentially
different (Gp--Si).. The crystal structure, mechanism of nucleation and growth
and structural defects are studied. The mechanism of occurrence of Wins in
the germanium films on (100) silicon is discussed. On GaAs substrates in the
initial stages of nucleation there is a tendency toward. the formation of flat
,,ntial growth rate of which turns out to be
(platelike) nuclei, the tange.
appreciably higher than the normal growth rate. The germanium films have a
1:10~-Illl;l :!III ~li Aill I Ullli.l_ I Lit 11 VIlLi 12PI I`kIII 1! 1: fit'- -MO 41 if-' 1.

USSR
KLOCUKOV, V. P., et al., Poluprovodnikovaya tel-h-nika i mil--roelektronika, No 6,
1971, pp, 24-30
mosaic structure. The data on the angles of disorientation of the fiLms and
substrates obtained from the corresponding rockinS curves confirm the con-
clusions obtained from topographic studies: the film growing on the surface
of the crystal is not only distorted itself, but it distorts the substrate.
2/2
Ii "M IV HIM.- 1~

112 021
UNCLASSIFIM i 1PIOCESSING t)ATE--02:)CT70
TITLE--CilomESTERASE ACTIVITY U4 DIFFERIENT PARTS 'JF T11F BRAIN IN
EXPERVIENTAL GANGULETERAKIDOSIS -U-
-.AUTH0R-('32)-SAV:,:ij':, N.A., SOLOATENKO,- T.A.
,~C,UUNTRY OF INFO-USSR
s 1 7
UUkCE--4F1)17`Sl.4SKAYA PARAZITCLOGIYA I PARAZITARNYYE 13.9LE-Z'JI, 9 0, V:)L 31)
R Z i, PP 205-206
:-DATL. PUBL ISHED----70
'AREAS-.SIOLUGICAL AND MEDICAL SCIENCES
-TOPIC.'TAGS-CHOLINESTERASE, ACETYLCHOLINEV ENZYME ACTIVITYt IRRAIN
~-_'CONTROL MARKING--NO RESrRICTIONS
'DOCUMENT CLASS--UNCLASSIFIED
:?RrJXY RLEL/FRAME--19VO/1435 STEP f4o--(Jfk/0358/To/339/002/0205/,)206
C I R CACCESSION NO--AP0109495
UNCLASSIFIFD

212 ~021 UNC L A S S I F I ED PROCESSING DATE--020CT70
~,:CIRC ACCESSION N,'O--AP0109495
..ABSTRACT/EXTRACT--(U) GP-0- ABSTRACT. EXPERIMENTS IN WHITE RATS
DEMONSTRATED THAT IN EXPERIMENTAL "PANGULETERAKIDOSIS CAUSED BY
GANGULETFRAKIS SPUMOSA THE CAPACITY OF DIFFERENT PARTS OF THE BRAIN FOR
HYDPOLYSIS OF ACETYLCH-3LINE WAS REDUCED CONSIDERABLY. THE GREATEST FALL
a F
IN THE-ACTIVITY OF THE ENZYME WAS FOUNVIN THE BRAIN HEMISPHERES L
,-'~JNFECTEO RAXS. FACILITY: ODESSKIY UNIVERSITET IM. 1. [4
MEC[iNIKOBA.-'
4-1ml-ms-3- uEn

:PAOC-C-S-SING 0ATE--02QCT70
112 021 UNCLASSI FTED
TITLE-01OHNESTERASE ACTIVITY IN DII-FERFkiT PARTS 3F THE BRAIN IN
.1 is -U-1
EXPERtMENTAL GANGULETERAKIDDS
~AUTIHOR-02)-SAV'-~;-,"~--, N.A-9 SOL,)ATENK31. T*A.
-CUUNTRY OF INFG--USSR
.-.SGUkCE--vF0Jr--SI:JSKAYA PARAZITOLOGIYAI DOLEZNli 1973t VDL 39
N R. PP 205-206
::~'DATE P1181- ISHeD----10
AREAS BIOLUGICAL AND MEDICAL SCIENCES
TAGS-CHOLINESTERASE, ACETYLCHOLINEt ENZYME ACTIVITYt BRAIN
OINTROL MARKI-NG--NO RESTqICTIONS
~.,DOCUHENT CLAS-5--UNCLASSIFIED
PROXY REELIFRAME-1990/1435 STEP NO--I.IR/0358/70/339/002/0235/0206
~-.-C,IRC ACCESSION NO-AP0109495
UNCLASSIFIED

212 021 UNCL ASS I F.I ED ~PROCESSING DATE--02OCT70
CIRC ACCESSION %10--AP0109495
~.AdSTRACWEXTRACT--(U) GP-0- ABSTRACT. EXPERIMENTS IN WHITE RATS
DEMONSTRATED THAT IN EXPERIMENTAL GANGULETERAKIDOSIS CAUSED BY
..GANGULETERAXIS SPUMOSA THE CAPACITY OFOIFFERENT~PARTS OF THE BRAIN F9R
HYDROLYSIS 6F ACETYLCHJLINC WAS REOUCED CONSIDER4BLY. THE GREATEST FALL
-)F
IN THE~ACTIVITY OF THE ENZYME WAS FOUND IN THE BRAIN HEMISPHERES
INFECTED OATS. FACILITY:. ODESSKIY UNIVERSITET IM. 1. 1.
MECHNIKOBA."~
UNCLASSIFIED

PROCESSINIGY DATE--IISEP70
-1/2 024 UNCtASSI:FlF--D
7,t~:-TITLE--WHY THE AIRCRAFT PITCHED UP DURING LANDING -U-
AUTHOR--SOLDATENKOV, A.
COUNTRY OF rNFO__USSR
AVIATSIYA I KOSMONAVTIkA, NO. 2v 1970, PP 34-35
DATE PUBLISHED ------- TO
_~-SUBJECT AREAS--AER0NAUTICSv, PHYSICS
TOPIC TAGS--JFT AIRCR4FT, BOMBER AIRCRAFT, AIRCRAFT LANDING, Al