SCIENTIFIC ABSTRACT VILIM, YU. V. - VINAROVA, L. I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002203510020-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 10, 2001
• Sequence Number: 20
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

212 020 UNCLASSI FI,ED. PROCESSING DATE--04DEC70
CIRC ACCESS 10i'l NO-AP0132401
ABSTRACT/,EXTRACT--(U) GP-0- ABSTRACT. SY1111CHROCYCLOTRON IRRADN. OF A V
TARGET PRODUCED PRIME47 CA BY THE PRIME51. V(Pv4N),- PRIME47 CA REACTION.
AFTER HNO SUB3 SOLNo AND REMOVAL OF MOST OF THE V AS AN HYDRATED OXIOE,
THE PH OF THE SOLN. WAS ADJUSTED TO 3'74v.AND.THE.SOLNl. PASSED THROUGH A
CATIONIC ION EXCHANGE COLUMN (DIAM. EQUALS-1-CM, HEIGHT EQUALS .5 CM) OF
DOWERX-5OX4 (50-100 MESH) IN NA.FORM.i AFTER.SUBSCQUENT REMOVAL OF FEv
V, AND-PRIME46-48 SCr PRIME47.CA WAS ULTIMATELY:REMOVED FROM THE COf-
UMN
~WITH 3N HNO SUB3 AND THE SOLN. EVAPD.ITOITHE DESIRED VOL. A GAMMA
SPECTRUM WITH A NAI(TL) SC"(NTILLATION; SPECTROMETER INDI.CATED MAX. AT
ENERGIES OF 510, 810, AND 1.310 KEV* TfIE PR I ME4 TCA HALF LIFE WAS 4.46
PLUS OR MINUS 0.18 DAYS.
UNCLASSIFIED

USSR UDC 669.15.018.23-14(088.8)
BKLOVi A. D., VILIM, JJJ~ V., KOSOBOKOV E. A., SEDOV, V. 'V., YAROPOLOV, 1. 1.,
VASIL'YEV, V~-D7--.
"Automatic Cast Stainless Steel"
USSR Author's Certificate No 276433, Filed 15 Jul 68, Published 12 Oct 70,
(from RM-Netallurgiya, Na 4, Apr, 71,Abstract No 41613F).
Translatlon: In order to improve machinabilityv steel containing the follow-
ing (in X) is proposed: C < 0.12, Cr*17-20, A 8-11, Bi 0.1-0.2, S 0.06-0.1-2,
P < 0.035, Si < 1.0, Mn 1.C-2.0. The,presence of S and Bi in steel raises
the strength of the cutting tool and improves the machinability of the steel..
Mien using the steel (compared with WhlBNOTL steel.) the cutting rate with
60-min strength of the toolis improved by 25-50%, or therstrength of the
cutting tool is increased by 2-6 times.

USSR UDC: 621-376.234
VILISOV, A. A. , WATK-IN, A. P., MAIMIMOVA, W. K. , MILOSERDOVA,
'*~~~PEKARSKIY, Ye. N.
"Sensitivity of Gallium Arsenide Detector Diodes"
Kiev, Izvestiya VUZ Radioel6ktronika, vol. 14, No. -5, 1971,
pp 585-587
Abstract: This brief commu-nication.'offers the results of research
of the behavior of point contact and Schott]W, barrier diodes of
electronic GaAs. 'In their exoeriments,-the authors measured the
sensitivity of the diodes in'the thrlee-centimeter wavolon-th rai.,ge
at a power level of 10 /AlU under short-eircuit:'condi.tions. The
-tuning of the detector section or a matched transformer prod-aced
a standing wave ratio less than or.equal to 2,to 2.5. he diodes
tes+ed had an electron concentration of from 1.103-6 cm-T3 to 1-,Ola
0 3 1.1016 to
f? tne,point-contact, and a material of n =1 -
10-~ICM 3 for the 3chottky bdrrier devices. The two types
of diodes are corjy)ared with regard to theiX, detector character-
isticc. curves are given for.the sensitivity of both types as
function6 of the bitav current and.the frequear.y. The experiments
showed that the sensitivity of tho liodes cquld be signiiicantly
pulses of the proper.sl vi pe

5!551014 x
X-1* STUDY OF TIM HIM)MORPHOLOGY AND DISTRIBUTIM OF ADWXTURES IN EPIT&X-
IAL AND rALLILIK ARSWIDE AS t. FUNCTION OF Tilt GROWnt TIME
1hittcli by 1.. 0.
ft!kirva. f. A. Ktirnetnev. Yu. M. Ru"Antsev,
r; -Vffkj oaya, Tcmk, Novi;ALbl.
ltosits-F-fiiiie~ft valup~".-tnlie%qk
Xrt-il-,i 1. !11=2!~. Rufi*14n. Li-l~ June IYIZ. p 12fil
A study_." kide of thA 01t2midl 1--yers of - _irallium eratnide gr~i La
an Pen todide iyot- on sbutrotax 4tir lectf~nir; 1 -1. tk;i
(110) diroccLon. The gvwth zine varied froo,one win-st; t;--tlirv-e fiiuru.
It vas thdt for all Sr-th ti-a btal.nii'R with no to-
ote, the xrwth of the layer* of the -n 4rIwnv4tlvtt takeit place *by phifting
of the Pfir4IIeL 4tepl. . nit to &it* a numbe r . f 't r-th defects laAdLo g to, dt.-
torbomr.. In the otdartil nottonof, the Otero. Tlm4a arv,tbo Re-th help%, t"I
Stowth.4tIts dad Once t~ntdrx PE retardation of. the.-otepa in which the step-1
tom local pticupa.4nd loops. "Thote La- a significant reoijing mtnt' of the
G~rf&C4 of tjt* ~C~awlnsl 1.4yer,fitth xtco~ch tloin the Arouth hIT14 and below
disippamr, the do-alti-or the centits'ot v%tordstion tt'Ahe lotaps,decromov,
and the coaffguriation of the. The reArrantenent- of the aurfare
of the 14ytroji ttorpanl6d by variation $n alloy ,ng-1tviol.- A'deAr corrals-
clan has been estA$vIllahed betwein.the electron concentration In the 'layer and
thd-dinatty ~f the t*fttersi of retardaLleft'of thil'Stope. The bbearVed tQTrOIMr-
tt= f"&g&mK.th4t the n alforulty of alAnyIng -and chi formation of tht
trwajtIon layer can be cvnvAt9*4 with jrwth. Aefacts owd thoilr'allact an th4
swition PC the glovth step*.

j
USSR UDC 621.582.2
nSwitchina- Charge Of Pulse Gallium Arsenide Diodell
lork
V sb. Areenid galliya (Gallium Arsenide-~-Collection Of s), Issue Tomsk,
Tomsk University, 1970, pp 272-274 (from. RZ-h--Elchtranika i eye primeneniye,
~No 4, April 1971, Absturact No. 4K87)
Trapslation% The switching charge of a pulse GaAs eatiliconductcr diode. is invest-
ivated. GaAs with a concenl-ration and mobility of electrorls of 7 . 1016 cu,717
4070 cm2/v.sec waB usad7to make the;Bemiconductordioda. After assumbly of
and
the sem1conductor diod,~, short pulses 0.5 sec) In the forwurd d.4.rection
were formed of a half-cycle of industrial freTuency ctarrent. The dependence is
presented of the switching charge of a GaAs semiconductor -diode on t--- formin.~
current. It is shown that the initial formIng pulses decreased the marnitude of-
the switchinla charge from 2-7 to.0.5-1.5.nanocaulomb. A oha'rp increoce of the
switching charge for all the semiconductor. diodes wao observed with forming
currents of 0.05 1 0.15 amp. Subsequent foz--ing lead to a decrease of the sw-_".tch-
ing charge. Me oboserved changes of the Pwitchin'-Y char,re were e:qlained by a mod-
ification of the structure of the rectifying barrier Jrl tlhe fonning process, not-
ably by,formation. during the initial forming of a conductor contact oz-
the Schottky barrier type, and during subsequent form,ing of a p-n Junction. it is
noted that 3emiconductor diodres of GaAs with a e-ditching charge < nano-
coulomb c5n be Produced by frii-mijig. A. Yo.

...........
,11.3 0 25 !,,/If 1-201NOV70
ONG L A 5 1 F I F. D PROci,5
D F U A L L I L,','-l f%;:' S EI 1~
Uf- Rf-i IkKAGIATION (A
TITLE-,EFFECT L F.
UES -u
ILS-E:O DIG;
-~:--Aurhc,k:-,(c-5)-b~,LIU~iYYi V-fi-, VILTSOV, :vyA,rKl,',j,J IN.P., KRIVOVp M.-A
MALYANGV7 S'.Vv
COUNTRY DF INK-USSR
SOURC E- I Z V VYSSH. UCHT ZAVEF;.- FIL4. 1970, 13. f 41 109-13
E L~
DATE PLID"LISHED ------- 70
SUiJJLCT ARE;,,S-ELECTRfjNtCS A iN f) ELECTR LtAL.. E h! GR :PHYS I C S
-)ALLIU.14 AA`i6viiD~ S Di f tJ,,CT OR 'iF IcRUIT VOLT MA, 1) F R F
TOPIL T-A )-f L) 0 t,
r r
ELECT 1) A C N T!
CHARACTERI
T I ONS
CNTR C L M A VK I -'i 0 E S r I
0 Lf, U ~M EN T L Lil S 5 ---UPI C L AS , S I F I L- 0
PROXY L E L F k A ME 3 0 0 3 / 1 13 STEP N 10- - U R 0 L 39. 7 0 10 1 1) 0 4 0 1 Q') L 13
C 1 i C S S C N c; 1 4- 0 .

7~7-777_ -77-" 777'1!__7___1_____, ~v
2/3 025 UNCLASSIF11H P~ZOCESSING 0AFE--2QNJV70
-3,3 NO--AT01
C IRC ACCI
E S I CN
F F ECT OF f-LECTRW 1.1%RADN. ON
A: TPACT. TM~ A
4 , I ,
VOL T.,c~ 6 C Ud A LN r I V- A vu L r A GE C A 1) 14 C I T A iNCz , AND i1UJ_Sx': CHAm1AC_rF_kISJJCS OF
T 1 JIUD~:S STUDILD,, T Ljj~
E, C pREpU.,
0 of) 11 ill 0o9 C I r4~
FROM N, rypE GAAS 'Wffl- k LtS I S. T I V I T F S (11:
C 01 C S - f - f _33 - 5 ) T 10 PRME1.6 AN(,' (1-2 ) f I -H E_ 0 d e, f "a E 15 Citt 1) k 1 E 3
A.-,,D 1161-- 1 L I T I LS 0 F 5 f'!"' A M) 55 OG- C.M P11*1 E ME 2 V S E C E S P A F 11: k A S S LIM b L Y
-< iN ) D
COMP LE T 1 CJ-4, E LEC, . FU,; ti t ~% 6 WAS CAI; R I F- UIJ T BY HIALF PEAIGD CUARE,4T PULSES
IN TFL. FLkW4RU DIRECT "Fl", E 0 1110 F-.,~ E R, E 1RRA[j.4Ar1-*1J bY 1.5-MEV
VRM'-) THL
ELECTkCNS, Attil' CAPACU~'k%g'Li-, !.'.EASURL.%1FNTS WERE 14A 0 A T 30 MHZ-
. t IT E~L SE Vill.ThGE-. Al"1110 FL
-A _'~UWVES C A K EINI THAT: bREAKOUAM A R D P, E S f S TANC E
V
INCMEASE, :,~if RE(,T"1FI(_'AT1Giq CU~-F. UND r::K 14RAOM. THE CHANGES
VIT
ARE ATTKIL-UTED F'j AN JNCr~EASE IN THE: RESIST[ Y: AT fitE EXPE.,NSF -JF A
0ECkEASt 1,N' ThE ~ji- CHARGER CAiZRIERS. GAPACHAili*CE bFCR"ASES UNUER
UHIM Of' r IE A PA I T 1,00ULA I UN ; W-c'RE AS S it T THE
r
CHAN(AS IN fr1VUr*.fTY _D1SrR.-fBtJfUj;N 11-.~ fHE 'SPAU CHARGE REGIr"pl
I i t s B L I i A V 10 k :(~A 14 b F_ E. XP f- A 11N E- D i ;,i r It L 16 H 1 0 F
MIGHLY Ffjk~',H) 1; 1 tj 0 L.,
W- L 1, Y V F L C, P f- -"' F 0 P L AN' JUNG t I "',,% !l AN07 S(.'11"T7KY r p"E, RRIEXS.
Y A
FROM Uhf_ PULA LXPTS, , riic' .,