SCIENTIFIC ABSTRACT YURASKIN, A. S. - YURASOVS, V. YE.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 19, 2001
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT


YURIL(-KM A.S,
Virsion ef tho cryptorchid teatis and spermatic cord. Xhiru-
g1la -39 no./,:142~343 Apf63-- - -(h7RA 17 t2)
141 Ts khirurgicheskogo otdoleniya .(-nachaltnik. G.H. -Prikhod1ko)
F~)rovskoy dorozhnoy bol Initay (naahal tnik S. T. Chomynheva)
Miskovskoy zlieleznoy dorogi.

- - - - - - -- - - -
YURASOI, sqy_Y~kpjpyevIch; LOSSIZEWMIY. V.L.. prof., doktor tekhn.
2.1.. riad.isd-ova; BOBROT. P.G., takha.red.
(Remote control. Lecture 11o.lo. Theory of relay networks] Tole-
Upravlenie.- -Laktaiia parvaia: -Teorlia:- relainykh- ukhem- Kdskva------
Tses.saochnyl politekhn.lu-t. 63 p. imm 133)
(Romote controlY_' (SwitchIng theory)

S/194/62/000/005/037/157
D222/D309
AUTHOR:~ Yurasovp A.N.
-A method Of transforming relay circuits with-mutually
TITLE.
exclusive contacts
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
1'10 - 5, 0
1962, abstract 5-2-125 1 (Sb. statey. Vses.
zaochn. politekhn~ in-ta 1960, no. 24, 135-142)
TEXT: A method of constructing relay-contact bridge circuits in
which false chains are eliminated by mutually exclusivG contacts is
exarained, The selection of such contacts is carried out by compar-
ing the saparate terms of the structural, formular first pairviise#
thon compg.ring tho paira , and ao on. Thd following sequence of ope-
~Mtion is.recommended for circuits containing oeveral reactive or-
ans-i-1)_-The-brackets are-removed-in such-away'that-each term con-
tains one'reactive organ; 2) that pair of terms is selected which L/
contai-ns-i;he-largest-number--of-colmon contactst-and-which differs-
:in the mutually-exclusive contacts of one element; the common con-
.~tacts are put in front-of the brackets; 3) analogouslyt each pair
Card 1/2

-,i
:i

9/120/61/000/002/038/042
WTHOW, s TuA" chin-sici-i 54 and Yur
asovv~ VO DO
TITLE Humidity Sensor Based on.Uning a Porovis Semiconducting
Film
PERIODICALz Pribory'i tekhnika eksperimenta, 1961, No.2, pp-183-184
_j TEXTao The sensitive element is a semiconducting,tin dioxide
film wi~ltlh a porous surface produced by vacuum depqsition_on-a------------
porcelaln drYing at 1.50%
-1 as can be easily
7h7iJur. The- film porosity, and thickne
-troll essure and
"con led by varying the pr tf~e_ temperature in-the
.vacuum qhamber.i_ Porous -tin- dioxide films. of.- thicknesisea between
ac
100 and'300A can also be produced by pyrolysis of tin tetr hloride
onto Ahe,-., surface of a porcelain plate heated to 800-9()OOC and
plated- in a bell into which vapours of an alcohol -solution of tin
.-tetrachl-ori*de SnCl - 5HgO are -fed -in, - together with a stream of dry
By-,controlling the speed of fee-ding-in the mixture, the
degree of saturation of the-mix-turewlth tin tetrachloride vapours,
the dural.tion of the process and the air humidity, porous films of
'~the desir-ed thIckness can be obtained. A reliable contact between
Card 1/3.

Humidit~y. ensor 3ased -on S/l2o/6i/ooo/oo2/O38/042
S
E210/9594
the f i4a and the electrodes' is produced by.vacuum deposition of thin
silver Air, td platinuin electrodes. A good contact can also be obtained
by soldorkng with indium. without a flux.- The dependence of the
resistance (Ig I/R vs. (p,%) of the sensor on tho, ralative humidity-
is plotted. in Fig.1; it ioi reminiacent.or the adsorption isotherm
laf water vapour on.porous absorbents (A. I~A uzner.Ik_0V'__
Ichimii, 11)5 ___32,_No.6 in- the electric
___q_' - A-v=15
ff_lji~ a
-0 -3~0-,- nd 40%- 6-:Crelative humidiiy, which is
v
-y-, _e weeri
attributied to the- beginning of capillary condensation in the pores.
Absence of hysteresis indicates that the film does not interact
with wator. Thus, the rectilinear section of curve I can be Applied
for determining relative humidities between 40 and 95% with an-
accuracy of about 1% compared to psychometric measurements which
were applied -for calibrating the instrument.,, On a semi.logarithmic
plot theIompe Irature dependence-is practically linear; at room
tetmperaturit the temperature coefficient Is.about 0.86%/OC.
There are 2 figures and 9 referencess 8 Soviet and 1-non-Soviet.
hbstracto,rIS Note,. This is it condensed translation
SUBMITrED;t May 189 1960
Card 2/3

F-7 Le

40614
S/239/62/M/004/001/002
1015/1215
F
AUTHOR: Yurasav.V1,,,--,,.
TITLE: The temperatute of the brain and viscera following cooling of CNS
PERIODICAL: Fiziologicheskiy zhurnal SSSR im. 1. M. Sechenova, v. 48, no. 4, 1962, 413421
-TEXT. Thdproble-mout-he temperature of the various parts ofthe brain and organs in normal conditions-ind
after cooling of the organism is, still a matter of controv.-isy. This is the continuation of a previous st-idy.
-Acute experiments Were performed on 40 dogs.--The direct cooling of various parts of CNS -was perfolmed
by the perfusion technique through the ventricles and subarachnoidal space of the spinal cord (Golovir.s
method). 17lictemperaturc of the liver, of muscles of the thigh, of the rectum, of the skin and of the brain a.'.
three diffcrcrit levels wasmeasured every 5-10 min. with clectrotheimometers 3TY-M (ETU-M) and "Bio-
term". EnvirOnmental temperature during the experiments was 13-25T. The decrease in the temperatwe
is most rapid in the cortex and slowest at the lowest levels of the brain, regardless of the site of coolin,t
of CNS. On the other hand, it was observed that the dynamics of the thermal responses of the viscera and
the brain dipended on the site W cooling of CNS, although the reaction varied even following
cooling of the same site. The wtal tem -raturc did not reflect, the, degree
__of hypothermia, parti
V
Card 1/2

The temperature of the brain and... S/239/621049/004/001/002
1015/1215
cularly that of the brain. The thermoregulation is performed by,thc midbrain and is affected by the
corrigating cillcel of the cortex. The perfusion technique of Golovin enables one to perform local cooUng of
various parts:of CNS.. There are 4 figures and 3 tables,
ASSOCIATION: kafedra n.ormal'noy fizi-ologii MediLsinskogo instituta, Kuybyshev. (Chair of Normal
Physiology, Institute of Medicine, Kuyby!ihev)
SUBMITTED: Febiuary.14,1961
Card 2/2

TSMOLSVYATSMY. Sergay I-Onstaut1novich (Tiekhaviatelkyi, S.K.1, Prof.;
fKAMMINSKIT, T.V. EXaclutynalkyl, T;T.3, red.;C"jqS V T.G.
ClUrgi sov-, YXIMIl. otv, za v7pask
Dontemporary science on the origin and evolution of celsatial
bodicia; data for lectures] Suchasna nauka pro pokhodshannis
i rosmytok nebenafth.t1l;,materoly do lektall. Xyiv, 195S.
24 p,, (Tovaryalwo dlia poahy~eeania politychnykh I nankovykh
U Ian" Ukrainalkoi M. Ser.10, ao.20).
OMA 14:1)
(Gosmogouy)

AWMJ6gj6V- , kandidat takhnichookikh nauk. PROMOVA, N.I., kandidat
tedmichaskildm nauk; MIROVANTM, *.T,, kwAldat takhatchaskikh
nailk: SIMUE. Ta.Tu., kwAidat tekhnlchasklkh nauk, dotgeat
(Minak)
"Otitages and -protection against them in agricultural power natworkaeA
Au., Gebaen.
. Reviewed by V.V. Wrasov and others. Blaktriche-
V
st*o no.10:93-95 0 156. (MM 9:4)
(Zlectria Ongine-Gring)
-,(Gessen, Mu-)

ARMAWTANTS, Is- ask: Aianspoviohi inzh. - ZLMVM=, A.P*'#' kand., takhn.cauk;
.:KOZR$IN* IwKsolazho (docaacedt'WORTsove P*P'ea' kandpt9khnnaTA---
tekha,nauki NIXITINA, T.H., red,, IMMMOVA,
'i,.Awlk j-,'-'t4'khn'., red,
[Brief mnual on alectrioity In agdcultum] Kratkii spravGchnik
-po elaktrifikatsti-aellakogo khozialetva. ;.MoaL-va, Gos.isd-vo
~.,;mellkhoz.lit-ry, -1959,:- - 250.P. Alcm 13 5Y
(Elaitkei ty- In agriculture)

finGOTAIMSET. T.T.. kmnd.tokhn.nauk; TMABOT#.-Tjo, kandotekhn,rmuk;
-ATAUM,- Zholf., knudotekhu."iik~,' AHMIANOT, T.U., dnktor tekhn.
rjauk; ASTAPUT, U.N., kand.tekhn.nmik; H=O#,LA.,1eikadGnIk;
BYSMITSKIT, D.H., kand.takhn.nauk; TAYALIS, B.S.. kand.takhn.
nauk; GIRMEZRG, Y.T., inzh,-, GORMMOT, Te.K., inzh.; CIRI-
OMSKIT, E.Ta., Inzh.-, ZAKHARIH, A.G., doktor tekhn.nauk;
2LATKOVSXIY. A.P., kand.tekhn.natik; IOSIPTAX, S.G., lnzh.;
ITSOTICH. A.%., dotsent; KAUMIN. D.M., inzh.; KWITKO, M.N..
inth.-, KORSHUNOT, A.P.. inzh.; LNTIH, M.S., Imndetakhn.nauk;
-Inz
~03AXOV,
lush YEA T'T -9-~k6a.tekbii. PRONN=VA
K-L, kand.takhn.nauk; SMMOT. kand.tf;3kfin.uauL-; PATYU-
SN;&O, S.G.0 inzh.; KROVAN, Y.T., lush.; SHCHATSO Ye,X.,
kand.takhn.nauk; EBIN, L.Te.,- dok'.or takhn.nauk; ENTIH, I.A.,
kand.tekhn.nauk; SILIN, T.S., red.; SIMUNSKIT. T.A., red.;
DAWD, AII.,~ takhn.red.; SHLUOVA, Te.A., takhn.red.
[Handbook pertaining to the production and distribution of
electr1city in agriculture] - Spravochnik-_po -proizvodatirn
Uspredeldniiu-slektricheskol. energii-v--aeVekom khozinistva.
e.istimeva'sel -khosilit4ry...- Olak 2)
I.Teesoymonaya akademi 8811 8kokhozyaystvennvkh nauk Iment
T.I.Lenina Uor Budzkor.
Oinral eleatrif ication)

BERZIN, A.1 L., inzh.; BORODIN, I.F., kand. tekhn. nauk; LDKOVNIKOV,
A.Y., kand. tekhn. nauk; PR(7.jNIKOVA, M.I., kand. tekhn.
vauk; SERGOVARTSW, V.T., kand. tekha..nauk; YUUM.V,',,V.V,,j
kmid. tekLn. nauk; BURGUCHEV, S.A.,.zaal. dayatell nauld i
tekhniki RSF&R doktor tekbn. nauk, prof., red.; NIKITINA,
V.I., red.; SOLOD24IKOVA, G.A., red.; SOKOWVA, N.N., tekhn.
red.
61elotric-- wer pl -azW, powor -
-IDo ant otati6l
urwon s~ dub n
Fraktikum Po- elektricheakim stantaiiam, podstantol-
im i sistemam. (By] A.A.Berzin i dr. Moskva, Sellkhozizda.t.,
1963. 303 P. (MIRA 16:12)
(Electric power plants)
(Electric power distribution)

ULYAM, 1,1.. professor; BUDRIS.-R.R. professor- YNASOM -T.S.,
KOZ' Ij)VA, T.V., vrach; POPIXI. V-SO, vracb.
Hy-gilinte problems in the formtivit and tftfltr~affca of Crorkit
Re,,w7voir. Gig. i ean. 22 no.4-61-64 An '57. (HURA 10:9)
1. ri, Gorlkovskogo maditainskogo institute ineni S.M.Kirove..
(WATAR -U??LY,
creation & latilization of watershed (Ruc))

9A

120-2-29/37
~AUTHOR: Spivaki, G. V., Yurasova, V. Ye., Kushnir, F. F.
,e nt
TITLE. Installation for. metal etchine, by means of Ion Bombaidfri
(!JJhta1iovka dlya Travleniya Metallov Ionnoy Bombard-
irovko-.,r. (UIT-1))
PERIODICAL: Pribory i Tekhnika -Ilksperimentat 1957, No. 2.
pp. 105 - 110 (USSR)
ABSTRACT: CathiAe sputtering has lately been widely applied to
structure -investigation of metals, alloy:3 and dielectrics
(Ref. 1). Its advantages compared with chemical plating
have been discussed in Reference 2. Technical details of
such Lastallations have been described in References 3
and 40 --In the present article--the authors give the -
description of the UIT-1 (YNr-f) installation, tholigtit to
Ji more efficient than the existing ones, mainly
be muc.
b0cause of the availability of necessary conditions for
plating at high temperatures. Similarl to the installation
described in Reference 3, the UIT-1 (YWT-11) permits
accelerated sputterinS of a particular sample under forced
regimes at high potentials and, similarly to that described
in Reference 4, permits evaporation in a gaseous stream.
Compared with other types, UIT-1 (Y47-1) heas the following
Card 1/3 advantages. It permits simultaneous sputtering of three

T.Ustallation.for Metal Etching by Means of Ion Bombardment.
samples (as compared with one in. the __~Astallatiou - described
iii Refereneez a6d th --ra'- id-_ eValuati6i - of
Is-e I p L
the 1xist conditions for ion plating. A apecial arre-age-
ment for ins~~rting the heated sample is provided,.extabling
the temperature to be monisored. The temperature mpay be
varied, between 100 and 700 C. It is also possible to
plate'already plated samples with deposits of quartz or
metal-vithout -introducing 'air under-the-bell-jar thus
preventing oxidisat.".on of samples. The general- view of-
the installation is -g,iven in Figure 1. It consists of a
vacutiz, system (Fig. 2) and power supplies (Fig. 3). The
apparatus for simultaneous plating of three samples is
shown in Figure 4. Their shape may be arbitrary, with
the maximum dimension of the surface to be plated of
20 x 20mm. For accelerated etching 9.t temperatures near
perature a special insert is prov
room tem ided at -the apex
of the glass bell-jar (Fig. 6). It is stressed that~UIT-l
assures good control of the etching and plating
- _processes'and a-swift change from one operation to another,
e.g. the deposition of quartz or metal films on to a sample
may begin one minute after the finish of sputtering;
Card 2/3 changtag of sputtered samples takes.no more than 15-minutes.

120-2-20/37
fastallation for Metal Etching by flezans of Ion Bombardment.
The aralysis of the ion bombardment etching and of t-he
applicability of the cathode sputterer -to-the analysis of
--the-gX.ain- boundaries and of the -tarface relief structures
of metals and alloys have been discussed in Reference 2.-
The following have co-operated with the- authors in- the--
design --of--the--device: -1: 1 F. anova, A.I. Klenova,
A.I. Krokhina, N.A. Pereverzev, V.V. Potekhin and
T.F. Filippova. Four photographs and-three schematic-
diagrams are given. Therj~- are 5 - references, -3 Of which
are Slavic.
SUBMITM: December, 25, 1956.
ASSOCIATION: Faculty of Physics af the- Moscow State University
imeni 1A.. V. Lomonosov. (Fizicheskiy Fakulltet MGU im
M. V. lomonosova.)
AVAIIABLE: Lib3!ary of Congress.
Card 313

-V A-5 14-.)
AUTHOR:, Yurasova, V.-Ye. 70-6-10/12
TITLE:
.The Formation of Oriented Figures in the Ionic Bombardment
oftetals (Obrazovani,,,re orientirovannvkh figur pri ionnoy
boubardirovke metalloir)
PMIODICAL: Kristallograftya,'1957, Vo.
1. 21 No 6, PP. 770 - 775
ABSTRACT: Me advantages of- cathodic sputtering as a method obtaining
oriented figures on the aurfaces of metals are mentioned and
conditions for the best results are indicated. Slip planes in
sifi~~re crystals can be dotected. The mechanism of the process
is discussed. The. advantages over chemical etchIng are: '
1 there is no need to choose a suitable etch-Loor each metal.
2~ 01a.thodic sputtering itan be used at any temperature from
20 to 0.6 of.the melting tempErature of the metal. St-rains can
therefore be removed if required. 3) After cathodic sputtering
the Burface of the metal is not covered with a layer of ocide and
therefore the specimen i~; suitable for further electron micro-
scopic examination. 4) By changing the kinds of ions used
and the voltage and curront regimes the depth of the etching can
be controlled, To find the best conditions the 513 face of an
alumirdum single crystal was subjected to bonibardment with neon
Cardl/3 ions. The voltage was "2 000 across the tube at a curreat

?0-6-10/12
The, Formation of Oriented Fie;ures in the Ionic. Bombardment of Metals.
den.sity of 1.2 mAlcm~ and a pressure' of 10-? mm Hg. Bombardment
lasted 3 hours, Flats corresponding to the 1.10 planes were
developed. (These have the greatest reticular density). After
10 hours the pattern lost its sharpness. Further tests suggested
a -he conditions quoted are optimum except that the pressur--
h t t
t
should be 10 mm Hg, Mnditions for a range of metals are
i ~-, On.crystals of Cd slip planes are disclosed
quoto.id-in-detail
~--Regulari!tie~6 -in- the-hehaviour-- of - various- metal
by-bombardment. . - S,-
unde3i, this glow discharge are found; 1) Certain mdals, for
example, Al, show oriented pits of one form oi, another and
oriented hillocks are not found (when there is a net loss of
material from the cathode). 2) On the closestpacked planes of
certwin metals pits are. formed and on others hillocks. On the
0001 planes of Bi 'hexagonal raised regions are formed but on
the 0001 of Zn hexagonal pits appear. 3) Under certain
itions pits and hillocks may be.produced simultaneously, for
cond.
0d,. for example.- 7arious, -theories of the process are discussed
but none is found-very-oatisfactory; besides the evaporation
of aboms there'is surface diffusion and the re-deposition of
material on the surface to be considered.
Acknowledgients to A.V. Shubnikov,, G.V. Spivak and V.R. Reg
ele
There are 6-figm-res, 1 table and 10 references, 4 of which ar
Ca--d2/3 Slavic.

I
1. ,
I . ; -:4,
I .

SOV/074518-10-214-741) -
a.
__Transtatic6.- from: -Referat-Lvnyy zhurn. L_ Metallurgiya, 1958._.Nr__J_Q;_P 144(USSR1
AUTHOR:, Yurasov
TITLE: On the Processes of Cathodic Atornization of. Single. Crystals
and P'olycrystals -of Metals (0 protsessakh, pri katodnom
raspyleni.i rnetallichesMkh mono-i-.polikristallov)'~
ABSTRACT: Bibliographic, entry on the aluffiorl,s dissert ation for the degree
---OLCandidate-of-P-hysical--Math(-!,w,3-tic-al.-S-r-iences. presented to
T T_-_- W.

2
T T t. 1:1, -
gra401%
e Disinte t~ IE- f

of the Dentroyed. U't-tA1 1) Ovrc-c-II.-r~;c, toorii 1-atodylogo
-~ao-,pyleriya i m-krorellyef -r&z--uslhaycmoy povezkhnonati --ma-talla)

I CL 1-'; ?8
Zhux-nal te-im-icheskoy-fiziki-, pp-.-- 1966--1976

I,'.CT:
ST,
A -:ir. ta !-;or'u :urvoy coverip.- the morlorn Vl,:Ori~-F7 o", Cathode
disintegration is The problen
-1"tr 'ou .1 diaintegMUOMj-
cor_ 2-
114, -nd tli raollic"'.1 tj ent-l", 0;, Vl~~
tar-get is irradiated by fast ions* A copper mollocv,~'-It;-l
investi,~,-ated for information bear ing
ont-hi s
-I -
-d -a- turget--f or7 tofi- - - M
ubJ=au Ps n :L s gener
61 ated
in plasma. with a high density and low p rib n f, i nal
ioni-.ation is cauced b- the emission of ihe oxjl~c cathocle.
--di 6

cloes-not 'ollow:a--cosirte lut Viat it
subatance
conw~ictc Of indiwil~lunl jl)ecki;. The iono viere ---cctlc;:alpd
~ddit-onal c,--periments! Jn v.,hich a
.Ibouzt 10~llqto 4000 ~; - -
Copper :,I:)!I0cryvtRl vits Vaporized Oat about 9500C) sllwiil~,d that
1 A? t,,(- denosit dijtribution ;-'rom en evaz)oratioil of a (100)

")V
/57-2-1

derri e or 0 _:(~'cDisintegrat Of tllc-
~.~e + a
urface
f c0oine curve indepc-ndently from the initial
~itate o' --'e Ouffaco. ,"hen, however, it is etched by i-,r_,a
-it D.-!, -n~cal p.-Atern iF- eitabl~s
of E-n on bombmIrti".0. 'U
r
-hed
L j
.
.
.
_,
,
Thi a "n oo'-011-Ual dif.-,'orenco between thc: ml~!Chan-
ioms 0. c c disintegratiOn 01*4 Zal ion.
tlio: '.Toreover
,
it 1;111-,A~ tI~~, directional eliii!-' i rti
2- on of the pa. .01P3
caused by an ion bo:~aburdmont u.;nnol; be c~-(-Jained hy.oeoo;viar~,
aurface, ~a. The tlie -2tib,3t~.',~cp
plLenomer. _waitl diaintegxat-P %f
along. certiin simple crystal).w,1','-D!t2.C
y claused by the mechahisni of ion etch_Jni~. Tjwr~!
dica.tion that, the nxiFting theor-Jes of" cz~ V ou", 6, didint;'_%9MbiOmbPf-
-fer zio for tao exp1nnation o-1 the
_ :orientat ion funct'on at:hic,h velocities in t h o
-ork prept -for hiLr I
L.. I., - ji~otopopovai -who iEf r i Yr, or, a

~j t ed in th~ toork.
-A. P. Kriptar and H. D. "orgulisi
mib.-,,tantial contribution.'I'to it. It viac Iwioed.
are 4 fi!.'urea and 11 refor
i U! %re 120viat.
Card 2,

A~6-7-6-14/24
'AUTHORS.- Spivak, G-OV., Yurasova, V.Ye#, Klen9va, A.I. and Vlasova,T.A.-
TITLE. On the Exposure:of a
tho Structur,~ of Metals by Q a Ion
Bombardment
L
PERIODICAL: Fizika metallov metallovedeniye, 19591 Vol 7,- Nr 6,
pp 89~-898 (USSR)
ABSTRACT: In order to show the possibilities of. revealing_ themetal
-------structure.-of -a-heated--mat-erfal--by a cathode sputtering
nii,i-thod, the authors investigated several characteristic
a
.
'Lloys. -Atomizing of the specimens at a definite
temperature was carried out In the apparatus for the
ionic etching -of -metals--UIT-1 -used -b --~Sp:Lvak--et--al,;L(Ref-3j-=-
-Y
th~e6 is--a SpeciJLacfevice -for heating 'the
specimen (from 100 -to 700*C).and for measuring its
tomperature-. Sheet specimens of- an Al-Mg-alloy-(6% Mg)
w0re submitted to ion bombardtaent at 500"C, Cathode
'ether with selective-evaporation,which-
sputtering _(tog.
tai~es -place at- such a tempora ture),. reveals the grain
boundaries of an Al-Mg alloy (6.5% Mg) heated to
-s -f c ---~ ----thid. -ons
a e o f c ed with neon i
ai 280 C and in::Fi~g la Ahe structure of'the -samet
Card 115 -alloy
revealed. -by cathode sputtering at 500 C ,are-. sho-A-u. From a

SOV/1216-7-6
Pn the Ex-~osure of
compari son of -these, photogr_aph$,,__it,- can be. seen that at
5.oaoc the- - -gra-in - 1. sizeofthe alloy is considerably coarser
and the grain-boundaries are finer. Apart from this
alloy,etching of specimens of steel YalT was studied
VrIth the apparatus UIT-1. In this case, chromium
ciarbides precipitated along the grain boundaries at 5000C.
The presence of chromium carbides akfter chemical etching
iis only apparent from the holes where the carbides were
attacked. By means of ionic etching at 600% t4e
chromium carbide precipitates along the grain boundarios
could Ve soen in the- form of small dark spheres of
approximately I to 211 diameter. A photograph of the-
s;arface of steel-~YaIT specimens etched at-6000c-and
s~tbsequently cooled is shoim in Fig 2. In Fig 3 ferrite
and austenite grains revealed as a result of cathode
stiuttering of the steel YalT are shown. In Fig 4 the
structure of pure aluminium sheet is shown (a - after
_ch~emical- etching; - b--- ~af ter -etching by -ion- bombardment).
The extent to which the metal struct-ure is revealed can
be best judged by the depth of etching of the intergranular
Card 2/5 boundary. Therefore, in order to select the correct

SOV/12&- 7- 6- ilt/~4
on the Exposure of the Structure-of Metals by Gas Ion Bombardment
-5p-uttering treatment,.,~.;1-.he dependence -of theAepth of metal
grain boundary-. etching-- oA,, -,the pi~drameters of -the - gas
dkl4charge- during --sinlultan`i~aus spu.tterIng was 'studied. The
de0th of "he boundaries was,measured-by a.stexwsc4apie
niethod. A quartz print was taken from the atomized
11 sU1.1face of the sp66imen and a, precise portion of this
print was photographed in the electron microscope UEM-100
under anangle of +6 and. _6* relative to, the optical axis,
The stereo-coupl-As obtained (Figs 5a-and-b) were studied-
wWi Ahe -om ter--SM-r3 which~gives the
precinJ: .1 stor
e e
'In -obtain more reliable__r_esu1-tj3--,___.__
vol.me effect. -arder to
-studi-4 eon
tbb~~, atomizing of the grain-bounda-r-
.--and, of technical copper KUth-- two
�nsirum-ents. - Ionic etching of the svecimens-~
was-'carried out initially-...'.n The - investi-
sr-~kte~d _--speditn-en ---wa-s---us6d as the,c~athode' in the tube. During
atom'.1zing-, the specilneh.temperature was kept constant by.
4 th water. -The dependence f theAepth of
wi
-etc1iing-of~the.grain boundary-on e potential difference
th
.'-between- the cathorle and ah,ode*during atomizing in neon
Card, 3/5 was Aetermined. 'the density of the-discharging curvent

-SOV/126-7-6-14/24
On the 'Vxpo4ure -~of- the Structure.of Me tal a by Gas I Bombardment
wap-kept constant- 10 mAlem The results of the
measurements carried out areshown by the curve. ~Iri -Fig
The dependence of the depth of otobing of Ithe grain
boundaries an the. donsity of - thO discliarging--Ir-,urrent-wa-s---
Studied oxi two types, of Spec imens---whi C_h' were -cut- out from
technical- copper-df soniewhat-,different--co~afpositioas. The
--"nlaty' Q f ---the -.disc h&r~jlng current varied between 5 and
5-
I /cm~; the potential difference between the electrodes.
ifas~kept constant at 5 M The specimen was atomized for
5 mins. The dependence of the.depth-of etching of the
grain boundaries on-the density of the discharging cu -rr-ent--
-T,-,ras found to be, lirLear (Fig 7) From - an- analy)ai.3- the
curv4s obtained- fox7~,_.~,he----ddpendente -of the depth__ofl etching
la-
t e--ii erg "ular m-stal boundaries on Che density of
the-discharging current and on the potential difference
the electr des it is possible to arrIve-at-the
be
0
--advantage in raising
foll;2tring conclusions:- -.-there-- is ho
the cathode and the anode
..:L.Ae,potential difference between
itbove 8-9 kW to accelerate revealing the metal structure.
It is, Vette'e -for the density of the discharging current to
4/5
be ini,,reased The greatest permissible density ofthe,

c V'&'A, W -2 t -'FWP(b At -2, Fr-4/Pa*-
n: 31n
A rx rvf lect loob 4)f b~r-;.q~t,4 %'zvm tho aurf ar-o of t a !w -i~
17'
iT h Comlorunca CxQ
1 1470- 14
no, G NA 73
TOD',,` )9r, argon
C-,~Y!-LAie -1pJttarLnV, Rtngl,3 Crrt'Ir
ABST-LAc r., -,bt, a agijlar dintriLution of incl.ient lens reflocted from a
(1C101, Taca iul C'. 'au'a-centered copper corm-% was cal(mlated. The b.,cident ioi,,g vem
a-,qstu-tc-d t:j ba of troclmratc u-argy Ila f~~,v koV) a~ad to ~,.Ave the sane tags -,:kt tho oOP-
per atc-=. On.1 Y lie, timjuctorlea of thooe icyra were ralculated thal left t4e t&rg*,*-
art%-- tu) "Tilb, lattic4,~ atc-as. Vht-, c~.)Illisl~ts were tmite4 as ,,o111aioufi
nplerez, a:nd th-3 c:,-~111!,ior- vq4jj were .,-,L'Aculated uving the inornanul
12 G ~'-e r.Lte--rlial )A4-- jimp-tcel ",thodg miployod to 0aloul4tq the ton
X-a ec, t In amx~ Tmjmto,,! *3 ware comrmtQd for "himidreft
of a 450 ;e~atar in t1le violvAty of a taricat atqmq.-~

C-
ACCESSICA' !M AP4045302
't Ta Iand r 1001
s foulxl tllst la-~Ejaimuz rjtmfi3oY3 of ~Artlciei~ aro reflactod in the Ll I u "
I
azL-J maximmE nurdberu in th-i direct -ma vl loo9v pac)dni; lying betveen
,be-tio rxvs, Thc~P. am in all 4G-1;.it of w;cinum m-flectiqw; tiese aro in-
C-litiod at 200 t.) the nor=tl (rlK)3 ax -.a' ftneo ii re, 11 i4xibuted --tvt ervals In
uximld~h. 6imil-a - NO"- 1-or t1v reflection oi 2 kd1 argon ions.
a' Copper c The v-qu-Ala W0114~ Qual'tativgoly 01~qllzr to MOSO 10? ions
a L, -kmam t( the taxget atom , anti ave vr;ported to ban in good agreettent with
the ezpeiir,4-rta' data of 1j.A.Bs,--haz1:j*kiy ard G.M.vauav (Zhur.akmp,
5 furaula-4 " 4 fl
gures
444J-4!
=Lt 00
alm CW-Z-: 1',C 'Se- 5 (PV I M YmRt 007
Aw.
wg;
vwm~ wav--mv, 11,01 WER
OPENS* ISMA, I

---- ---- ------------------
AUTVORS Yur4sova-, .-V. - re., - Spivak, G.- V.
- 307/48-23-6-19/28
.
n r-,

TITLIII: hods for the Develo ment of tlie St ct-
itet ru
ure of Metals and
I
,
k1loys by'- lon-botabardient (114t
odika -Vyyavlbniya struktary metallov
-
l
,
i- splavov nn ombardirovkoy)
io o~j
PEHIOI~ICAlit I.,zvestiya Akadeati nault SSBRI. Seriya fizichookayal 1959,
Vol, 230 Nr 6, PP 744 749 (USSR)

ABSTUM t
~a partof the present paper ion-etchin - -the--.
I the first _g of
gicanalar boundaries and.- ion of the
a e within a la:rge temperature interval.
the advantages of cathodic a ing as
pray against chemical

n in.
a vacuum are poin
-etching and thermal evaporatio ted out. One
'
of the most important-advantagesis the posuibility of carrying
ut structural investigations within a lar
ge temperature inter-
Val. Por visual investigation and fo"hot-ogr-aphing--a--spe~~iiii~
a zpa~i
at~tachment was-carstiact-ed Oig I-) -.73even pictures are then
:of aluminum bronze (Figs 2 3), ~ which w ere taken af t er
va.rious forms of thermal treatment by ion-spraying-and cathodic
Card 1/2 spiraying-and 350-fold enlargement'. The first series of pictures

Ma
71
ilethods for tba Development-of- tr4~1.-are.-,o
f. :~ietals -and 47/46_0-2~-6-19/20
.4omb rd t
Allo is by-- on a men..
distinctly shovj' the formation of the martensite structure in
the threwrange4 oftomporaturo,, whoreas the second series
altruotaretl grains at- various temperatures, In-the so-
C!)nd part -of the- paper the- destruction of the aurfdce-of the
structural graina of polyorystals or of monocrystals by ion-
bombardment , - he--fact -.is--pointed: ou that-
is investigated. -- First, --t.
_______b~t_the investigati6n_-4f__the: symmet ri, indentation s ouv knowledge
_61' the mechanism of cathode-spraying has been ext _e&,_aPd-th&t
W!w possib~lities-of---app-ly~in"an-WEi- dment.maynow~be found.
-from the pictures (F'ig 5) 'that the, symmetry of
orientat'dd.indentations agrees with the orientatian of' the sur-
face of a' monocrystal. In the following, the influence exercised
by. the increase of ion energy is invest igatod.-and- exiAla-i-ned _0n
the basis,--of _:f igure- 5.- possible.
-
--t the
_hii oxientsiVed_ indent4tions ay form in the course
_OfAon-wetching-_ Th4rik are -b'.1,1gures. and
references, of which
Lri) Soviet'.
Ar
fakailt itei
66C
'WAj;
j;~k mon
'N

v riA T--
PHASE I BOOK UPLOITATIOU Bov/5526
Vfjesi)yuznoyo soveshchanlya po magnitnoy strukture f -3rromagnetikoV,.-.
Ki?asnoyarsk, 1958. ------
Magn.l.tnaya strulctura ferromagnetikov; materialy Vsesoyuznogo
soveshchaniya,
io - -6 i~runya 1953 g., Krasnoyarsk kMagnetic
Sj;ructure of Ferromagnetic Substances; Materials of the All-Union
C4mf erance on the Magnetic Structure, of Ferroinagnetic Substances,
Uld in Krannoyarzk 10 - :16 June.' 1958).Novo3lbirsk, Izd-vo
SJbirzkogo otd. AN SSSR, 1960. 249 p. Errata,alip Inserted.
1,500 copies print6d.
Sponsoring Agency: Akademiya nauk SSSR. Institut flzlki Sibirskogo
otdoleniya. Komissiya po magneti=u pri Institute fiz=. metallov
OYSIT
Rezp, Ed.- L. V. Kirenskly, Doctor of.Physical and Mathematical,
Sciences; Ed.: R. L. Dudnik; Tech. Ed.: A. Fe Mazutova.
PURP6,'3E-.: This collection'of articles is intended for researcher3-In
1w, fe:hrovagnetism and forbetal
Card. i

structure (Cont.) SOV/5526

COVERAGE: The collection contnins '~8 scientific articles presented
at the All-Union Conference onthe Magnetic Structure of Ferro-
-ma&ndtie Substances, - hold In -Kraanoyarsk In June 1958. The ma-

erial contains data on the
maEnetic structure of ferromagnetic
materials and on the dynamics of the structure In relation to
r
agn
rv dtic rield chanoca, claotic atreasee, and temperature. Ac-
cording to.th,~. Forword the study of ferromagnetic materials bad'
--a;succonsful-beginning In the Soviet Union in the 1930's, -.was
oubse-quently -d1scontinuad for many yaara, and was resumed In the
1950113., No peridorallties are mentioned.- References accompany
IndivIdual artl(~les.
TABLE OF CONTENTS:
Foreword
Shur, Ya, S. (InStitUt f12iki metallov AN SSSR Institute of
Physics of Metals, AS USSR, Sverdlovsk]. On the Magnetic
Structurc of Perromagnetle Substancea
Card 2/13,

St,mature (Cont.) SOV/5596__
..-on - the -Nagnittic Properties of -Territes 175
ya% L Y* and M-.:~Kazan
Pe IM44 _N tseva Physics Department of
-is a to-University]
Z6 a _Anomalous Temperature Dependence
Lta
and:Irrever6ible-Changes in the Magnetic Prorjerties_of_A114)y-------
Ni Fe (5 'k_JkUi)__----___ 177
Spivik, Q.t,j and I. A P amkova-, (Physics Department of
e rj.
-the Moscow.2tat Univer;ity __ Development of theElectron-
Mirror Method for.the Visual Observation of the Domain
Structure of Ferromagnatic Substances
j3pivak$ Go Vos Ye.,I. Shishkinaj and V. Ye. Yurasove.
(Physica Department of the Moscow stal-e-un-T-ve-mity-h
Concerning L~w Method for the Detection of Magnetic
Inhomogeneit'Les
191
Drokin, A, li,, Do A. Laptay, and R. P. Smolin [Institute
of"Physics#'Hberian Branch-AS USSR, Krasnoyarsk]. Thermo-
magnatic Hysteresis of Ferro-magnetic -Sub,stanves at the Points
card 9/11

/60/605/003/020/024/XX
S/070
E132/E46o
AM3 ORS Yt:rasova'. V 0 ye, Pavlovskaya, E.A. ~Tya N~A.~
Punina?
a 5zi~,;Voditel!V, cA6
TITLEj :----The--,A Ii-- - f n 6 V- i o n- 1- i t- 'or:-Showin
pp cat chtng UP-'
a oca ons -~]-Mjatalli Ct~als
-7f
V- PP 1+37-440
ERIODICAL: KrI tallograf iya --1960 9 ol.59
4i, ~~ Iplat.e
TEXT,, Etching is the most widely used method of.revealing the
Islocations at a crystals surface and is usually
emergence of
dislocations au .cces&U.
chemical or eLactrolytic~ - To -show the -it
is~ essen-Itial. that impurities should be concentrated in them giving
a Cottrell atmosphere, The method of ionic etr-hing has been
studied as it has the advantage of producing no superficial
oxidation and of being usable over a wide temperature range.
Dialocations are shown up by the selective sputtering of ions
from the disturbed places in the lattice,, Cadmium crystals have
been used with zinc as the de corating-:Lmpurity.--.-Sputtering was
U - h- 'n air or neon at 10-1 to 10-2 Ug.
carried ou - in-~a - glo-W d3.sc arge x mm
The best conditions were found to be-. current density 20 i~a/cM2
,voltage 1500 to 2000, duration 20 min and pressure 10-1 mm Hg.
Card 1/2 - -

v v -1Z

P-';) # :=m3 v'~T-

A v I ll~ a D

'r~-j
:773 Ir ".aw.; A A
~'

u v -t-

jr

0 EL -q
Ja
A

it, 3u

S/O 1/000/01;~/054/085
-58/6
AUTHORSt Spivak, G.V., Shishkina, Ye.I., Yurasova, V.Ye.
TITIRs Cancerning a method for detecting magnetic inhomogeneities
PERIODICALs Rei!erativnyy zhurnal. Fliika, no.-12,-1961, 38,3, abstract i.2F,684 (v
sb:. "Magnitn. struktura fe:~romagnetikov", Novosibirsk, Sib. otd. AN
m, 196o, 191 194)
IIMI The feasibility was demonstrated of detecting magnetio. inhomogenel-
ties. oi.'Ithe- surfaces of ferromagnetics by means of -chemical etching. The indi-
cated mathod to bas-ed on the fact that ions in solution that have a magnetic
moment ar-a drawn Anto the region with the highest magnetic-field gradient. - The
isoat effective etchants and etching conditions werefound by tb3 trial-and-error
fiethod. Using tha described method, an electron-microscope image was obt,%ined of
nagnetic inhomoge;,,ielties in an artificial specimen built up of altarnate ?exuen-
dure and Mo bands, as well as an image of natural magnetic inbomogenaitieii in
atartensitic needlos in steel.
N. Sedov
-[Abstracter's notAit Complete translation]
Card.1/1

24803
S/U48~61/025,1006/00-1-/010
B1 I 7/B212
-AUTFORS $pivak1-G._V.__0 Kufjbnir, F. an~
TITLE: YAT-3 (UIT-3) installation for etching metals, semicon-
ductors., and dielectrics through ion bombardment
R 1-0-D I C P _Ls Akademiya nauk SS-SR, - Iz-vesti-a. Seriya fizicheakaya, v. 25
6,-_',?6!.-707 712
rd.
T _IAT: The 'present pap.sr has been presented at tbe.5 . All-Union Conference
o,n Electron Ylicroscopy,.held in Leningrad from October 24 to 291 ic,,66. it
da3cribes a new model of a technical installation of type YVM-3 (UIT-3) 4or
etching metals,, semicortductors, a'ad dielectrics through ion bombardment.
The models UIT-1 and UIT-2 have been de--cribed in Refs. 1 and 2 (Spivak
G,. V., Yurasova V. Ye., Kushnir F. F., Prilozhayeva I. N., Pribnry i
tokhrika eksperim., NQ 2, 106 -(1957); . Yurasova V. Yo., Spivak G.
8 ---744- 0-959):)_-___T'_____U -3
Aft
irI-Stallation io'designed for the following Investigations of the surface
structure of mai,,erials under -different conditions: 1) heat~,,,ng of 4
sputtered specimen not above 12000C; 2 cooling -of the- spe'eimen during
Card 1/6

1 ~_M_ E-E.
Ea
5/dd6
ffiaVoi 0
A4r-_3___ (UIT-3)ir1stallati
et0hing with running water; 3) observation of the object surface during
s-puttering or eiraporation by u1sing an oiitical system with a long focal
length; 4) explitnsion or c-owT)resslorl. of the specimen durinj,, 4ollic etching
or evaporationl', 5) arplication of' qO-r.tz or metril foiln for I,b,~
suhsequent elec)xon-optioEJ study of 'the powdered q
urfuee) rlp.U after iotdc
etching- of-the ppecimens. The- T)IT-3 -ins-~allation consists of -the follo-1-ing
main components-.. system for generating and measuring the vacuum, feeding
device, control~acnsole, device for expansion-and-couiprosvion of tho
specimens, mefalloi,ranl.ic microsoo;,a lind a device to oputtor and hent -the
AYE; ~em-af--UIT-Tis --analo&ud--t6_ t1at-_0 f__UlIV-'I
electric system consis -to of the Tollowing main, componeritst hieli-tanniun
rectifier for 10Av and 50 Ma; heliting current transformer V, 250 a)
with a device to:trensfer the potential either to.hetit or Gvaporate the
r A-mer-
_eo
for--beacuring the -temperature of the specimen; device
for measuring t~e vacuum and twriniz -on-the ---pumps; - --interlocks--whIch --switch -
off en t oors of the
-oened. Fig, 2
installation are o-
shows a diagram ;)f the UIT-3 installation. -The shape of the specimens
to be sDuttered it:sy be arbitra3y if no load is ap plied. The maxisium size of a
Card 216

721003
3/048J61/025/006/03/0
..
Yor-5 (UIT- 3) 1 ns tal la ti on s
B1 17/]R1 2.

'specimen bombarded with tons 'should. -not- exoeed--30.x.30~, x 8 - mm.: Whon'the
0 -ld not -be larger than,:20, x 20 je-2
specimen is ~h ated up to 1200 C i~ shou
MM-i
2
Duri fig sputtering:a specimen-having a maximum-oross section of 20 mm and a
length.of 60 mm c6.a'be exppnded o7r - o o
mpre a a dd under.a load of 400 kg.- Right~:
.
after -the ionic o*tching a quartz, metal-, or carbon foil can be p%t
on thp
,
spocimen-t The ioutc etching may create im res iona__at__the-edgqs--of -.-the-
_ --A
- p__
-
.
; , -
monocryst whi-al mme ry-of- -these --edges-4 -Ths-orl ented--
ia~V� y
-Whic-1- -a---ro- --obtained-by oathode.sputterJng and oorrespxids to-the,-eymmstr f
Y 0
the -surf ace -where they are locativd-, may-be-'used to determine roughly th4
indices of simpleal, crystal edges.-The application of ionic etching seems'.
very promising to visualize dis1ccations,,- especially- for - beaied specimefid -if,
10hemical.etching ctnnot be used. -There are 4 figures. and
4 referencesi
.
,
I Soviet-bloo-and 1 non-Soviet-bloc.
ASSOCIAT169: FizichesMy fakulltet Moskovskogo gos. universitGta im. 11. V.
Lomonoso'va (Division of Physics of Moscow State-University-
imuni M. 7. Lomonosov)
Card 3/6

26689,
S105610104110051004-1038
a 0 B104/B108
AUTHORS: Yurasoila, V. Yff. Sirotonko, I.- G.-
,TITLE: Qathode sputtering of single-crystal balls
PERIODICAL:- Zhurnal eksperimentalinoy i teoreticheskoy fiziki, v, 410
no,. 501), 1961, 1359-1364
TEXT: Cathode sPuttering of single-crystal balls of copperp tungsten,
t
chromium, cobal ~y gerin=ium, iron, and au indium-antimony alloy has been
.carried out, in a~7plastaa of low pressure and-high density (crypton pressure
'V 5.10-3 mm 11g).J. The_balla-Bhaped apecimens had a diameter of from 3 to
6 mm. During sputteringo the apecimena were on 2anegative potential of
from I to 10 kv.: Current.density was 5-7 ma/cm .in some experiments even
13-15 ma/cm. . Ti.ie sputtered substances were collected on spherical or
cyl indrical Surf ~ice_s. The'direction. of emiasion of the sputtor'9d
particles was determined. From diamond-type-or face-centered cubic
latilces, the substances were chiefly sputtered in the [110] and (10(~
directions * Front body-center-ed cubic lattices, the substances were
chiefly sputtered. in the [111] and [1003 dirqctions. The precipitation
Card 1/Z

26689
S/056/61/041//00'/004/038
Cathode sputtering of singl0- B104/ 08
spots obtained-from aingle-crystal balls wer.3 more distinct than those
obtained f:rom sputtelAng of-plane single crystals. The precipitation
spots of substinces withface-centered lattide were the clearest. The.
precipitation intensity of substances with diamond lattice varies from
the center of the spot to its boundary nearly according to the coalne law.
The precipitatien intensity of substances with other lattice types
.decrea,5as more~rapidly from thecenter to the boundary. The sharpness of
the precipitation spots increases with increasing sputtering coefficient,
atomic number of the sputtered target, and temperature, and with decreasirg
lattice constant. The authors thank professor G. Vt Spivak for
discussions and V. M. Bukhaln~ov for assistance in the experiments. There
are 4 figures, I tablel and 10 references: I Soviet and 9 non-Soviet.
The 4 most recont references to Englibh-language publications read as
fo:klowa; E. i, Hensohke, J. Appl. Phys., 28, 411, 19571 R. H. Silsbee, J.
Appl. Phys.f 2!~, 12`1~s 1957;-G'- H. Gibson et al., Phys. Rev., 120, 1229,
196q; G.- Hs: Vi;iey~~, V.'-L'.;- Gibsoni Aull. lm.-. Phyes. Soo. 26 V 1960. ---
A3SOCIATTON:. Aloskovskiy gosudarstvennyy universitet (Moscow State
University)
SUBMITTED: kpril 27, 1961
.:Card 2/2

S/126/62/014/004/0,13/017
AUTHORS: Tyg,ipunina, N.A.,-Predvoditolev,-AGA.,
Gue;arova, S.M. and Zakharov, VeNo
TITLE: Distribution of impurities and-dislocations in cadmium
crystals
~PERXLODICAL. Fizika metallov J met'allovedeniye,. v. 14, noo 41
582 588
TEXT: It:has been established by Borovskiy et,al (Kristallo-
grafiya, 151621 1 -. 7, no. 4) that zinc tends to segregate at dis-
loc at ions -- J.n -c-admium crystals, the points,L of emergence of
idslocatiorts on the surface of a polished specimen being revealed
by etching pits. It has.also been found that in some specimens
two systems ol' etch figures can be obierved, their dimeneions.
being about JL_ 2 1L and about 0*1-1&, respectively. The object of
the present iiLvestigation was to -elucidate the causes of the
figil e
appearance of'these two systems of etch L * ies by studying th
effect of the~zinc concentration on the size and shape of the
etching pits.' The concentration of zinc inthe experimental
-zinc gklloyL specimens ranged from 0,01 10%& Blectrol
t. admium
JA.
C ard

S/126/62/014
/004/015/017
DistriVutiOn a
f impurities IP193/3383
and ion-,botabardment etching techniqu a weridi used to produce the
etching pitso The etch figures were'examined with the aid of ant
optical micro~copp in_thqi~.case of alloys containing less. than
40,' ~ Zn,. aii electron -microsicope--being. also.used to.-examine the
gilloys with lower Zn contents...-In some.casesq cine-photography
9 studythe prooess,_of formation of etch figures.
was employed t
The angle betm- _1Z/
ce of tte polished specimen and the
een~ the surfa 0
basal plane 10001) of c~ka~4um-ranged from-0- 9010. Rows of smalli
etching piti were observed in specimens with-the zinc content
lowerthan 1%0 Both small and 6oarse etching pits were formed as
thez~nc concentration increased. In specimens with 4% Zn the
formation of isolated. hexagonal pits was observe!d. Starting from
the zinc concentration of' 601,.plate-like pits of regular hexagonal-
shape formed in the (0001.) plane were observed only* The density
of-the small and coarse.etch figures:was practically-independent:
of the mini: concentration, which supported the view that the etch
pits corresponded to the,points of emergence of the dislocationsi
on the surEace of the specimens. The results of.measurements
-of the etch- its formed on-various alloys -are reprc;duced in ng.6`
P.
where the numb
er (n /1 n of pits in a given srecimens
Card 2A:

Distribution of impurities F,193/F.383
is plotted ageUnst the,etch-pits dimensions'(d,
_jO., the various
ys with the Zn content indicated.
graphs relatiiig to allo
Comparison of,these distribution curves with the constitution
diagram of the cadmium/zinc system-shows-that alloys with a Zn,
content lower~than the limit of its solid 5~olubility in Cd at
room temperature ~ are characterized by one sybtem, of (small) etch
figures. Two;systems of etch figures are formed,in two-phase
alloys, each vrith a characteristic size of etching pit. It can be
postulated thitt the system of the comr-se-etch-figurea_cornesponds
to dialocatlozis.decorated by the second-phase precipitates,
whereas the fine--etch-figures correspond to-dislocatio'ns with
Increased solute concentrationq i.e. to ottrell atmosphereso The~
iresults.of tho present investigation wore taken as a proof that
the presence 4,if dislocations considerably affected the distribution
of Zn in the alloys studied.
There are fILSures and I table.
ASSOCIATIO,"N: Moskovskiy gosudaretvennyy universitet imo
o osova (Moscow State University im.
M*V* Lom n

7z
S/046/62/026/011/021/021
B125/B102
AUTH urasova, V. Yo., and Murinelon
OM
TITLE: Pecluliarities:of anisotropy in the cathode sputtering of
siiigle crystals
emiya__-,s:~~ik--SSSR.-_ it h
PERIODICAL: Akiiii
Y
6
~1,9 2 1
_7 :.-- 126,
T _e- ani-do t'ropy of hexagonal crystals is studied on cylindrical zinc
single rystalis viith -the banal. plane (0601). The-most densely packed
directions (11",10)'were perpendicular to the cylinder axis. The apecimen..,;,~_
(of about the 'name height and diameter):wasattached to a glass tube
surround~ed by a glass or mica collector. -The glass tube Zontained a-`1'ow' V
pressuro plasme(jID-3 mm Hg) of high:density~(1013 em-3). -This test
conditions are deacribed bq Ve.ye, Yurarjova-and 1. 0. Sirotenko (Zh.
ekaperim. i teor. f iz 41 , 1359 _(1 961) Zinc is beat-sputtered as
follows: curre' at',:density.at the,specimen I ma, cm:2,:negative voltage'at,
the specimen-1.2 kv, krypton pressure~5*10` mm Hg, time of
sputtering 1 hr_,~, lhe substance of hexagonal, crystalli, like that of cubic
crystals, is mainly atomized in the diroo,tion of the densest packing.
Card 1/3

.8/04-6
/~2/026/oil/021/021
Teculiarities 4,~ anisotropy-.*a- B125/B102
Cathode sputterl~.ng of zinc single crystals onto a cylindrical glass
A~y- o
At-pat-terne~---T-he--i-ntervgfi
collector supplied sufficiently distLinqt sp
_______~hese--spots-de.ei.-eases frod-th-4--ce-nier toward the spot margin according
. 2
-Is 0' sin a
-to I/I (a) e Cosa, where PO 9.5 for Znand p. - 3--3 fo:r Cu
0
.,in Kr. In the evaporation of a monocrystalline copper sphere (d . it iam)
and at ratios ~t - d/l between 0.1 and 0-33, the photometric curves
remain nearly constant, and resemble the curves for the plane apeaimon-
d, is the diameter of the sphere, and 1 is the distance between Collector
and specimen. The angular size of the,spot is tan(6/2) - tan(bo/2) + p/2
for a plane apecimeng where 6 0 is the angular size of the atomized spot
when the collector is infinitely distant. The linear size
Do i~,--2e tan(6o/2) + do of the spot decreasea.with decreasing distance to.
the collector,_ 'but always remains greater than the dia-meter of the plane
specimen. The linear size of the sputtered spot remains smaller than the
specimen diameter in the case of spherical specimens and spherical
collectors, when tae screen is sufficiently near G 0-5). TH a is due to
Card 2/i

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2,
t
a
77
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he. 1 ~rb4*"','lz'~ipsrm uro'. d'Ad th4,'f ado' b bi
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-noon ga 16 --'t ha~ -had
:With T bsan~
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0 .:Apec. On
bombafdo&:vith ioni O'n-both~ (doot) - gahed - 'sliow4a ~ue, a .ama'.61GOA, Pati. It=G:!_
j. , :'* ' 4, t'
on -.-Ilepeal e -a a 6- .9
60J. Ceu~
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It V~tt 6rh4.". but .,lnt en6iri Q:KistInje'__
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no es.
CIIQ"L a --Ocb- ng-azi :~Tro ioa~ b t. i t, .t t
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nkj:ard-.-neon
favorable -experimenUl Cdjjdjtj6 prosmurs-`bi ween'&IQ and

9,6 r VM. V
'ACCE5SION NIA; AP404.11291 3/0049/64/028/00911411!141V
AUT409; (1, pbysiocosathtmet*zal sctertceq)i
+
Ro thkov& 0 A.." 1Lx-!L' -"a
SOURCE! Ali i'59R- seiiia fisicheaktiyii, v.
.TOPIC TAGSi thin fLlm, thin Pei-nalloy film, tathade sputtured film,
isputtered filn mAgn-atic procarty
--z 7T=~
ABSTRACTi f etufiy -400 btlen Madc. of a Magne
portant f- the mag-metic --Rao "--e tenant operatiza) of I;hin Permallay
[79% varyin;f in thiel!t;asa from 300 to 1000 It dqoosirad by
ciLthodic aptk.tering on a glasv, iiiibstrrite at 200C with it magnetic field
in the aubstrate ;)Larja. The results of the a tudy showed
that tho coircive force lic- decrati-sea irith Inc-reasing fllzi thickness d4
rttc of decr~eaaa !q olmilar to, but htSbat thazi$, Ithac observed
Curti I " 3

4-
in vapor-ocvosited gilms. The 'ilma deposited with a supe-imposed
magne t i c f Le id of ".50 ot Nad- th!~ lowest HC.The dependenc-i of I:hp
~jaristrapy f! eld II on d was simLl.sr to thAt for H ; iL decreasad with
k
in -- r e a,,i L n R %and witti at a minim!jn in films deposited with a superim-
ponfid magnet i a fit IA of 150 ca. A imiximiam Hk was obtained with a
superimpose( ftruld off 235 oa, the film saturation induction B. varie,4
fro-,n 11,000 to 700C. gs, Tegardleiis of d. The hysteresis-loop recLsn-
.gularity C,07yfizlent K- Br 18 here 3. in the req dual magnetlea-
wit incr 2aing to 700 and beyond. '.,~he
tion, devta t: a f r-nrn U nt yR 4 1
.deviatLan pr3-:)abIv cauied by a rathear low anLatropy in films of
igueh thickn n -2 .At the miximur, reverse magn-utic field Hof 10 0e,
the filrt.- i:quired frcm 20 to 45 naec for reverse magnetization. The
IIC_Clb_l CA
~thickne~o d, Elpetron microscopic atemination showed that the filTao
ha-41 5 f1gized,
'mASSOCMI'1014i Fizichaakiy faku:ttet Hookovskogo gostudarstiennego uni-;
veto i te ta Do P artmen' . of Pliya its Roacow Sta to Univara Lty)