SCIENTIFIC ABSTRACT YUNOSHEV, V. K. - YUNUSOV, A. YU.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001963120018-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 15, 2001
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

ASMMIVI
Yormtion of the color of't6=o Uares duriz6g dryli),,-,. 1Z7. v-,7B.
up-hob, za7;; pishchs- tokbo* nv;1259-64 1-53. (wa 11:8)
1. Zraimvdankiy Inditut pi~~ehevoy iromblennonti, Kafedra
tekbnologil taaltm;
(jIDb=O---~MrXImg) (Phenols)

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tolacco, lzv,vys*ucbobazavo;pizbc'httekkono*5:91-% 160#
(NM 13: 12 )

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nAVSM, TOOSHRA, T,I., 2aveduyushchly stantsiyey-
3ffect of oxygen upon guatric secretion, morphological blood coqposition,
blood pressure, 'respiration, and pnlse. mea.paraz.i paraz.bol. no-3:257-
.260 W-Je 153. (MLRA 6:8)
I.I.Stanislavakaya cbla9t,-,&y& protivomal7ariynaya stantsiva.
(67gen-ftslolog-icul.effeet) (Stomach-Secretions) (Blood)

yUITC)12G,~, F.S.) kand. tekh,,,. nauk, dol~-cent
Theoretical investigation o--;% the 7:)rOcess Of
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i. ymmwn~kiy aviri t5lonny:,7 JnS'UJ-Llt.

YUGMISON, E.Y, kand.tekInn.nau1c; YUNOSOVI R.O., inzh.
'Submerged-nelt build-up velding of the beaters of impact mills in the
Estonian Power System. Elek. sta. 34,no.11:20-23 11 163,
(141RA 17:2)

USSR/Ruman and.Aninal Physiology:- Blood Circulation. R-5
Ab s Jour Referat 7-hur -,mio1ogiiJ iio 16, 1957,W666
Author Yunosova) A.N*
Inst
Title She Influence of Vitamin C and B, on the Functional
State of Extracardial Nerves of Dog Hearts, After
Thyroid Extirpation.
Orig Pab Introductory report. 96 nauch, rabot Kasansk, med.
in-ta, 1957., vyp-jv1p io5_no.
Abstract No abstract.
Card 1/1 125

,TU,NOV, A.Yu.
Tatonic structure of the tortbventern tart of 'he sonthern
Capsian DepraBsion. Dokl. AN Azerb. ~~ 16 no. 6065-56()
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1. InBtitut geo2gli IN Azerbaydzhanskoy SSR. Predstavleno
akademikon M Azerbaydzhanakc7 SSR H.-A.Kashkayem.
(Caspian D3preDsion--Geologr, Structural)

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Y/,/ C" H, 4. 67
AUTHOR Yunovich A.B. 57-8-10/36
TITLE -Un-Determination of Relaxation Times of.Surface States in Germanium.
(Ob.opredelanii vremen relakeataii poverkhnostnykh sostoyaniy Y
germanii -Russian)
PERIODICAL Zhurnal Tekhn.Fiz., 1957, Vol 271 Nr Bf P? 17o7-1712
ABSTRACT A method for the investigation I)-of the influence of external ele-
otric fic1do.on the electric-oonductlivity of semiconductors, and
2) of the dependence of this effect on the frequency, in described.
This method is based on the measurement of the constant voltage
component at the sample which develops under the influence of the
alsotric transverse,field with the same frequency as that with A.c.
flowing through the samplee The results of meaeurement of the field
effect within the frequency range of 4v102 * mo4 Uz at n German-
-ion time on
ium samples prove the great dependence of the relaxat.
the surrounding atmosphere in the case of surface states. The in-
fluence of the atmosphere on the magnitude as well as on the sign
of the field effect at low frequencies can be explained by the dif-
ferent distortion of the energetic zones on the surface in conse-
quence of adsorption. A moist atmosphere correponds to the electro-
nic conductivity on the surface, while the conductivity of the at-
mosphere with dry,oxygen is put in relatioa with hole-conductivity.
2 illustrations and 4BIsvic references)
Card 1/2

On Determination of Relaxation Times of Surface States 57-8-10/36
ASSOCIATION Moscow State University, Depart3jent
(Moskovskiy gosudarstyennyy universitet,Fizioheakiy fak-alltet)
SUBMITTED APTil 8p 1957
AVAILABLE Library of Congress.
Card-2/2

240
AUTHORS3 Arokhin, B.G. SOV/155-58-5-30/37
TITM Yield Effect and Determination of the Energetic Position and
of the Concentratior of the Surface States in Germanium
PERIODICA13 Nauchnyye dok-lady vyssbey shkoly. Fiziko-matematicheskiye
naukis'958tHr 5,pp 177-182 (USSR)
ABSTIUCTs The authors i-n-vestigated.the.surface conductivity and the field
effect in germanium under variation of the surrounaing at-
mosphere* The dependence of the effective nobility on the sur-
face potential is determined from the results of the ex-
pe.-iments. The dependence of the surface states on the sur-
face potential is investigated. A comparison of the ex-
perimental results with different models of the surface states
shows that only a qualitative determination of the energetic
position and of the concentration of the surface level is
possible by the experiments carried out. The authors state
that the concentration of the aurface level is smaller by one
order near the.center of the prohibited zbne than in the upper
aiia lower part of the prohibited zone.

~ The authors thank Profesbor S.C. Kalashnikov for valuable
'Card 1/2

30
Field Effect and Determination of the Energetic SOV/155-58-5-30/37
Position and of the Concentration'of the Surface~ States in Germanium
suggestiomse
There are 17 reforencesp 3 of which are Soviet, 13 Amorican,
and I German.
ASSOCIATIONs'NoBkovskiy gobudarstvennyy univerBitet iseni M.V.Lomonosova
(IloBcow Stato UniverBity Imeni M.V. Lomonosov)
SUBIaTTED: Augus.t .4, '1958
Card 2/2

:L r, 5--23-4-2/-19
AUTROR; Yunovi i
TITLE% On the Dependence .of the Field Effect in Semiconductors on
Frequency (0 zavisimosti effekta polya v poluprovodnik-olkh j..
ch.astoty)
PERIODICAL: Zhurnal Tekhni'cheQlcoy Fiziki, 1958, Vol, 28) Nr 4, pp. 609,u
693
(USSR)
ABSTRACT; A simple theoretical approximation is examined here and the
problem, what conclusions can be drawn from the measuremente
of the frequency deperkdence of the field effect in semicon.
ducto-rs is treated. The hinetics of the filling of the suifa-
levels under conditions of the influence of an external
alternating field upon the semiconductor is examined. I! is
assumed that a system of surface-levels which is produced ),. '
adsorbed atoms and ions exists at the surface of the oxid(~-
-film of semiconductors. It is assumed that thepe level,,,
the distortion of the energetic zones near the burface, b,.-
that they have no influence upon the kinetics of the fas-
processes (belowr-,,10--Jsec), I.e. that V'he relaxation time of
the external surface levels is many times higher than that L'f
card 1A theinternal ones and that the thickness of the oxide film aj

On the Dependence of the Field Effect in Semiconductors on 57-28-4--2/39
Frequency
Card 2/4
compared to the screening length in the film is small. It
is further assumed that at the separating surface of oxide
and semiconductor a hype of state with the energy Et and
concentration N cm- exists. Thus an eleotron-semi-conductor
in which the hole-concentration as compared to the electror
-concentration can be disregarded (n'~' p) is examined. The
.0V1
zone distortion is assumed in a manyter that the hole-concen-
tration can also be disregarded at the surface. The semi-
conductor-surface is a coat the condenser on whose metal!-.-,
~ jo eig 2) is produced. The
plates the chargelk A-0 (per 1 cm
modification of the electric conductivity of the semiconductor
in.dopendenoe on the frequency of field-modification io rom-
putod for the case where the charge carriers with one sigr;
predominate and where a weak disturbance of equilibrium exist.~
The equation (13) derived here shows that under the conditions
given hereq in spite of the disturbance of equilibrium,
BoltzmanWs equation can be used for the electron-concen..
tration. It is shown that in the case of the application of
an external field the potential-modification must be many times
smaller than k T/q. (k - Boltzmann's constant, T -- the
absolute temperature, q - chargq of an electron). On the other

On the Dependence of the Field Effect in Semiconductors on 57-2;-;-4-2/7c;
Frequency
nly de
hand-the modification of the field at the surface is oz
01)
pendent on the modification of potential. The equation 0
for the modification of the entire negative electron-cht-Lrie
hn is obtained. The investigations showed that such an in-
veotigation of the frequency-dependence of the field effc~:t
can give important information about the proper-ties of the
semiconductor-surface. From the field-effect-measuremcnT~~ _t,
high frequency the average mobilit-V/-4avera of the space
U ge
charge in the layer can be determined& From the i3hape of the
frequency-dependence,of the-0 the relaxation-time ?-,, can
~/Ibf f ect
be-determined. From this, in case that the surface-potential
Y and the energetic position of the traps are known, the
capture crosa-section of the electrons by the traps can be
determined.
Professor S.G. Kaldshnikrv gave valuable advices to the
author. There are 2 figures and 8 references, 2 of which
are Soviet.,
ASSOCIATION: -lAoskovskiy gosudarstvennyy universitet im. M.V. Lomonoscva,
3/4 1 tet (Moscow State University imem
Card 2 -Fizicheskiy fakul

YUBDVICH, A.R.
XjmaticB of electron exchange between surface and valum in
-'Piz* tvarb tela 2 nD 6:908-
germnium, -912 Jo 159#
(MIRA 12:10)
I.Moskovskiy, gosudarstvanny7 univermitst in. H.V. Lomrnosova,
Fizichealdy fakulltat, Isfedra f12ikI poluprovodnikov.
(Oarmanium) (Blectrow)

66256
AUTHDR: Yuhvvichi~ A~-l E.
TITLE: ft-ths. -Dependents, cf~ the; Field. Effect-~,- Semiconductors- on
MIODICAL"; :YiZik&-Av-i21dO9o', tblx't, 1959P Vol _f) Wr-'7, PP1'Q9g_1_1.O1' (USSR)
ABSTRLCT-. Asaumdmg: Ab&t~ signs! are.: present-4n a
seminonduja-tjD=-and:-cn! its surfscej-thvv~ dependenze---of, thv:!field
effact-.0n. fraquanzy, as
especially the chsmge of conftotivity caused by the Influence of
83r external transversal electric field. A slight disturbance of
equilibrium is use-iiied for which the surface recombination
prevails the voluiie recombination. Besides, the presence of
surface states.of one type of current supporters is assumed. The
.,solution of the problem was-obtainea by the following procedure;
Formation and solution of Poisson equation; interpretation of
the Fermi quasi-le Iveli representation of the conductivity by a
Fermi quasi-level; determination of the dependence of the ef-
fective nobility on frequency. Investigation results reveal a
determination of the dependence of thefield effect on frequency
Card 1/2 by certain eigen-times. The Iexpressio n.found for the effective

66256
BOY/181-1-7-12/21
Onthe Dependence of the Field Effect in Semiconductors on Frequency. II
mobility may be used for the proper semiconductors as well as
for alloyed semiconductors. It was possible to show that the
neglect of secondary.supporters in the volume and on the our-
face of the semiconductor is correotq if the concentration of
the supporters is low and ifthe electronic exchange between
the locations of defect and the zones of secondary supporters
is lower than between the locations of defect and the zones of
the main supportera. The results of the present investigation
were discussed with Professor S. 0. Kalashnikov. Experiments
made by V. L. Bonch-Broyevigh are especially mentioned. There are
I figure and 14 references; 4 of which are Soviet.
ASSOCIATIOfis Moskovskiy gosuclarbivennyy universitet, Fizicheakiy fakulltet,
Kafedra fiziki poluprovodnikov (Moscow State University,
Physics Departmentg Chair of Physico of Semiconductors)
SUBMITTED: May 10, 1958
Card 2/2

VIM-5K321, A.D., ahademik, otv. red. 3 RZMOV, A.V., otv. red.; DURSHTEYN,
do.kto-?- k-him. na2k, otv. red.; T_Wa'Q_VjqH, A.B.,, red. iz-d-va;
T119101aiGAIA, S.G.) tek-hn,. red,
[Surf-nee -characteristics of semiconductors]Poverkhnostnye svoi-
stva poluprovodnikov. I-oskva., lzd-vo Almd. nauk SSSR, 1962. 231 p.
(MIRA 15.12)
1. Soveshchaniye po poverkbnostwfn svoistvan pDluprovodnikov, Flos-
cow, 1961 2. Chlon-korrespDndent Akademii nauk SSSR (for Rzhanov).
iGermanium-Electric properties) (Transistors)
(Seleni=.-Blectric properties)

L 17928-63
ACCESS-:,--~, nR:
grow-Lng --'e a' y
band ;--n -!~e
inc-ud.es =ea5-,-r ..,g --,~ I -
-he r-a-
S use :arr-'e,
ncc,
nz
E :3

iAUTHOR2 1.U.49-T V, Go; Hakhodnovag to AO;-
. _UJUS,
stuchabaik.ov, V, H,
ormontl~ At as; Osadchaya
TITLE: Radiative r6camb 1141it 10'n "In' Zn-dL f f us 8-d ''GaAs.P-n junctio.no
SOURCEI, Fizika tvaidoge. telav'-V. '~6b po&.60, 1964# 1900-1902
TOPIC TAGS3 TOCOMbin'tIOU ridiation raidiative. re comb Inatton
~~electrokuul.u scence-0 ft'junctiona'AAAS laserp GaAs diode, semi-
conductor laser,, laseri junction laser, Injection laser
ABSTRACT: -Reconbination Tadistion'fromnBe-doped GaAs p-n junctions
was -investigatedwith a view toward'possible laser application of Be-
-~1.46_ped GaAs injection diode$_,''.The GaAs.w~tth a..carrier concentration
5'1027' and 1018 c ..was diffused with Be In' vacuum, at
a was* about. cm2, In one of the dio
Th Junction 3#10. des the
Jjuvcfion was-30 p dpepr -Two-parailel.planeo~ver'e cleaved parpondic-
to ibis
Junction* ThA 'recombination radiation spectra were*
by Injecting carriers Iwith curren't.pulses up to 100 Amp.
41~.,~,_T 'pulse duration,-4as`1*2 pate: the,repatition rate Was 50 cps. 1
C
or 1113

ACCESSION NR: AP40396e9
IThe recombination spectIT& at 77Vshow that-the intensity of emission
jis very similar to thati.cUU-doped GaAs diodes* The maximum occurs
at, 16 47 eve The line VIM, it b~lf: max1pum and at a: current density
,of 2.8-
103 amp/cM2 wAs1P.014'e4.-_-Some warrowing and- nonlinear increase
currept densities* Analysis of
of- -intensity. were ol~oerfed.at: high
Joitage..chats teristice-and,recombination spectra show's that
c
is an acceptor lnpur~lty,, The maxinum,-solubility of Be in GaAs was:
~j6und to be greiateT.tha'n 1038 ce-3. Rzd~iative reco'Ainstion in Be-
jdoped GaAs has a higbei degree of.p-iobability than In GaAs doped with;
.-Zn, Assuming that radiativ
0 re-cc,~Ain'atiqn to ZU-doped GaAs is due to'
"transitions betweezi the
-caniluction-band and-the acceptor levels, the
~...-jj!nergy level formed by -Be~is'i.-lose'to that~of Zu~ in GaAs* The-narrow~
ag of the line was believed to'- be-. caused.by atl=ulaied e.misgionin
jwhich f Act would indicate thep6ssibllity of obtaining laser action
'degeneratia GaAs .,doped wi tb Be
att. hasi 2 figures&:...
Oris 4~
1. J
ASSOCIATION: -Moskovski go daTs.'tvq'n1i un vets Itet" Law ..He, Ve
nosova (Moscov.: 5 tat*, Univa-Ts ity)
ICCM2/-3.~~

- ---------
ACCESSION NRI AP4039693 S/0181/641006/006/1908/1910
AUTHOR:
A,jph 0A* E&;.Yellseyev P G Be$
~'03adchayaq Le A`_J-1tV"' 6nikov :V 'H*
I-TITLE: Structure of c o'b 8"r a n t, radiation: spectra from GaAs p-n
t-Junctions
Fizika: tverdogc?.' I- n- .-6, -1964, 1908-1916'
SOURCE: te ai,.Vo o,
JITOPIC TAGS: GaAs-las:i, semiconductor laser..laser, junction laser,
Injection laserlp cobs ent emisiiazil Fohereat emission spectrum
.'IABSTRACT: :-The' itruCture of 4ecombination radiation emitted by OaAs
P-n Jun.r.0oii lasers.operating.at 779 was Investigated* The diodes ware
fabricated~by diffusion of zinc~'intb GaAs wafers, The carrier concen-
tration of GaAs was 'about-7111017.cn-3. Ths'c*arriern were Injected
byapplying currant-VU136i Of Vto 100 amp, The duration of the
pulses and,the xepstit~on.Tate were 1*2 posc and 50,,,cpa, respectively.,
..,For differenrdiodes the ihresho ,Id.current density v3ried between
)3 gzocO 'One-
2,.6-1013 and llQl( A -to three- lines,, ~about 2 -Vor lose
wide,:appeared near. tb# main -peak at the.threshold current.
3
Rv:
V

ACCESSION NR: AP 039693
As--- the c urrent den-a I -ty', was ncre-as.eA the numbe roff, k it (all 6f which
pea
7;--05 k wide) increase
in-_a-.longvpve.-pari of ld
to 10-15,, and the naip peak woo shifted Ipto this ppectral regio
;SoMa overlapping of ne-Aghboring lines-w#g.obsarvad.,, The line width
at half maximum varied.-frofi less 'than-I A too2.5'A. The separation
11between the majority of the adjacent p4aks was 3.5 �0. 7,, T he
_,lintensity of the main peak was-hig4est Xor diodes"wAth ~he synallest
number of maxima and tbe, least'. shif tinget - In stich ditodea the series
resistance determined fronithe .'curren t-voitage-character istics was
a-14ghtly lower than iti othei dLodes,e * Such lasers were also.'aaracter-
ized by a sudden increase of-ciur~rent at a voltage of about 1.47, and
by a-_thinner*p-n transition region. The structure of the emission
i,sppctra was explained on..the-.bas1s,bf*an earlier paper (P. Ps Sorokin~
-J.-D.- Axel, Je Re.'Lankard. J AOpl 340 2553, 1963) in which
showu-,-,th-at--spevtr toponants-_ f---con-ti-nuou"-y---cmi-tti-n-g-GaAn---7
it.:vorretipond -to)a 0 asi
$f f e'rsnt:~-7esvk~ty .-a I was: -calculated, that
0 0-tel
_0 on of-the!
I a 0 1k t-;V paiLuentil 1y ~.ob served tam-
LZ
i'.U;t
-3~21 -1
. . . . . . . . . .

8/0181/64/006/008/2369/2375
ACCESSION NR: AP4043356
AUTHORS: Yunovich,,.,4,!~_.,~; Talate Go no
TITLE& On the kinetics-of the f ield effect on:the surface of sili-
con:,
SOURCE: Fizika tverdogo tela,: v.- 6, no. 8, 1964, 2369-2375
TOPIC TAGS: vilico~ junction,,temperature dependehce, semiconduc-
tor surface,.captute, cross 'secition,,: relaxation tilpe
ABSTRACT: The purpose.of-the iinvesiigation.was to check experi-'
:-mentally on the applicability qf.tbe.theoiTof A~ E. Yunovich (Cola-
[Surface Pro-
lection "Poverkhnostny*ye svoystva P.Oluprovodnikov"
perties of Semiconductors)-,.AN SSSR,-Moscow'- po 127o 1962) to sur-,
face jphenamena.an-bigh-resistivity p-type,silicon. The-prepara-
tion-of the samples-and tbetest procedure is4escribedo Measure-
ments of tbi*terperature dependence of the field effect has shown
C

ACCESBION NRt AP4043356
:,~.~.tbat in the temparatu=e range 230--300H this dependence agrees with
assu tion- tbat. there is- only one surface level and
.1 the theoretical MP
large changes in the surface potential. It in shown that a com-
parison of the experimental data with the theory makes it possible
to calculate the concentration of the surfeice states# theirenergyo
and the bole-capture cross-section. The-results are analyz6d with
the aid of a theory that takes into.Account large changes in the
surface ctroh exchange betwodn the majority car-
.potential and ele %.
riers and one surface level....In the,particular p-type silicon
surface investigated,the suiface states were found to have an
"B 0 11 cnr2
energy E .78 eV,-a concentration -4 x 10 and a
t 1. v
2
bole-capture cross, sectli.on'-3 ~xl cm The deviation observed
i below.230X in the simple dependence-of tbe-relaxation time on the
A
temperature can be related with'the interaction: between the holes
"The.autbors -grateful to Professor
and other.surface levels..' are
V12:0v:for interest~in:tbe work and for a-discussion of the
V. a. VA
results." _.Orig*.art*' bas:-'S,figureb, 3 formulas# and I table.
Card 2

1~:- - ~~ ~- ~: . ..... ~ .... " Ir ~ 1. - , I .
1 ~-~ -, -* Ir " - , z. . I I : / ~. - . ~ , : . - I . . 7 . .
. , : ; . , .1 - - -, - '. , f . , . - . II
-,.. . . . . - . "I II .. . -, . - . 1 . 1. 1 . -.
I - . . I, I , .- - 1 1. 1 . . I

YMSEYEV,, P.Gt,,- HAMODNOVA., I.A.; ORMIONT, A.B.; QSADCIIAYA, L.A.
STUCHEMMIT, V.M.
Radiative recombination in p - n-junctions in GaAs produced
by beryllium diffusion. Fiz. tver. tela 6 no.6:1900-1902
Je 164. (MERA 17: 9)
1. Moskovskiy gosudarstvennyy universitet imeni Lomonosova,

YHOVICH, A.E.; YELISELYEV, P.G. OIDMINT. A. B, OSADCIHAYA L. A. STUCHE BNIKOV,
Structure of coherent radiation spectura from GaAs p n-junctions.
Fiz. tver. tela 6 no.6;10,08~-1910 Je 164. (MIRA 17:9)
1. Moskovskiy gosudarstven-nyy universitet ime-ni Lomonosova.

L 58,406-65
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deep Aweptor lmlz, vAtb the donors and -4ae(Ttors atronLZ.1~'- C;
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SUBMITTED: ObOct64
NO PTT SOV: 003 OTHER: 00"
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L 3 2 -66. :ik,` I k
ACCESSION NR- AP5021J.",56
AUTHOR- Ye!jsevev. P.
TITLE: 71he production cf semi oridictur 'aise,,-;~
SOURCE: Prih(lr, ! 1,ekhritka
TOPIC -FAGS tnd~! tiii
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pec~:1,.a.-ties f r-stal f 4
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SUBMITTED: 10 J ulY 64 ENCI.,
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A UTF'Or< : Orm-nt A, FA.
OP', -. Moscow ~;tate Univer-silr i.-,. V .
versi tet
TITLE: L,3v - r ur"-.,) t ra a vv~ r- t_ 7.,
SOURCE: Fi z i, a t ve rd r-.i7 c. e _' _-~ , -! . -.,
TOPIC TAGS: -3emicondiictor ciode- v a I.-, i:n- a r~ P r
beryllium, zinc, pn
A3S-RACT 1 'P.'n
f,:F,
tj op. C~!- :-16
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of these maxima depena on thP 6 0 D A n T C,5rLcent rat j o,-,
is ec r n;~

ACC NP: AP600EP44
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L ~n62_66 EwTft)ITIvoA(h) ijp(c) AT,
A= BR: AMD6813 SOURCE CODE: UR/0181/661008/002/0353/0355
IAUMOR: Kul'sresbta,_A. P Yunovicb, A. E.
State -Universi (Moskovskiy gosudrastvennyy uni-
:versitet)
:TITLri Higb-voltage current oscillations in a GaAs semi-Insulator
~~ISOURCE: Fizika tverdogo tela, v. 1), no. 2, I'M, 353-355
gallium arsenide, semiconductor toaterial, thermal excitation, electro-.
ITOPIC TAGS-
Imagnetic oscillation
~,iABSTRACT: Persistent current'oscillations were abserved in p-gallium arsenide semi-
insulators at high voltages during studies of thermally stimulated currents in these
crystals. The oscillations were observed throughout the entire temperature interval
,f=m 77 to 3500K. These oscillations show up in the negative section of the cur-
rent-voltage.characateristic; when the electric field intensity reaches a threshold
value of approximately 200 v/cm. The oscillatio;js were sinusaidal, sawtoothed or
of a more complex relaxation type. 'Curves for the amplitude as a function of volt-
aga-first abow an increase,, and then a reduction.to zem with a strong increase in

t 311t2-66-
Ace NR: AP6006813
current. The period oUthe oscillations varies frm a few dozen microseconds to
hundreds of milliseconds depending on the temperature, the applied field, and the
tintensity and.spectral composition of the incident light. Measurements showed that
)the distribution of the electric field along the specimen is weakly nonbomogeneous
the case of weak fields and strongly,nonhomogencous in fields close to the oscil-
Ilation threshold. The maximum field was always observedat-the anode with an in-
Icrease in field -intensity- at the cathode.-alsos'alt-hough not as strong; The strong
the field close to the*anode was especially sensitive to light. The maxi-
Pum amplitude was observed at an ener y-of approximately 1.23 ev which corresponds
-eater than one micron. The oscillations are associat-
_Ito a wavelength of a little gr
;ed with the same traps which are responsible for thermally stimulated currents.
!In conclusion the authors take this occasion- to express their sincere gratitude to
N. S. Vavilov for valuable consultation.. They also thank V. A. GontLifiov for as-
Isistanre with this work. Ozdg. art. has; 3 figures#
iSUB CODE: 20/ SUBM DATE: 16Jm$5/ ORIG REF: ODS/ MH REF: 005
Vard 2/2
Z C-

4']k327-66 241 W16i-;-iLM)/-TJT-Ya --iRA-C)
ACC NA$ ANO SOURCE CODE: UR/0181/66/008/008/2330/2335
!AUTHOR:, Vavilov, V. S.; N,-jrbodnova, 1. A.; Silln', A. R.; Yunovich, A. E.
V. Lomonosov jMoskovskly goBudarstvennyy
ORG: Moscow State UniverBkty
ti--- 7-
TME: Radiative recorAination of GaSb p-n junctions ob tained by crystal pulling from a melt
SOURCE: Fizika tyerdogo tela, V. 8, no. 8, 1966, 2330-2335
TOPIC TAGS: gall um antlmonide, single crystal growing, recombitwtion spectrum, crystal
donor, crystal Impurity, f V%
ABSTRACT: P-n junctions in single crystals of GaSb were obtal-fed by growing a crystal on a
seed containing a donor (A-e)(6i'iii667if6ii-'Impurity from a meltIffloyed with an acceptor (Zn
Cd) (or respectively donor) impurity. The crystalswere grown In a hydrogen atmosphere.
The seeds were oriented along the direction