SCIENTIFIC ABSTRACT VAVILOV, V.S. - VAVILOV, V.S.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
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• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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1,11 S3SR, !,'oqkvF,
Lebvdc~v AS USSR, Moscow)
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-'0769
5/181/61/003/oll,'001/056
3102/B1 38
AUTHORS; Plotnikov, A. F.,,Vavilov, V. S., ana Smirnov, L. S.
TITLEs Kinetics of photoconductivity in p-type neutron-irradiated
silicon
PERIODICALs Fizika tverdogo tela, v. 3, no. 11, 1961, 3253 - 3259
TEXT: The defeat formation due to fast-neutron irradiation was investi-
gated in single crystals of p.~type silicon. The specimens used had been
described by the authors in an earlier paper (FTT, 8, ig6i).. The
defect level system arising due to the fa8t-neutron irradiation in the
forbidden band is shown in Fig. 1. The photoconductivity investigated
was that connected with the electron transitions to the levelq E.,+0-30 ev,
EV + 0.38 ey and Ev + 0.45 ev. Temperature was around IOOOK. Tho olec-
tron was excited by steep-sided light pulses with rise and 'decay times of
5 gaec each. Photoconduction rolaxation was studied separately for each
level by two independent methods. Ev + 0.30 .:vt (I)Um build-up time 4p,,
of photoconductivity was found at 4p-po on an 3HO-1(ENO-I) oscillcecope.
Card 1/4

3y~~9
3/ 1 1/0 5 6
Kinetics of photoconductivity in ... B102/B138
m , the initial electron concentration at level ,!, .,:as found t-s 'ne
0 12 -14 2
kf8e 10 cm and cr p4U3 -10 cm was determined for the hole trap)ing
cross section. (2) The build-up curves 6pM -f(t) were investi&-.'.-i.,! for
Po),&p. It was confirmed that the building is govornnd br i.,.a expo-
nential law. The parameters of the centers were found to m Pil 13, -3
-14 2 0 - 0 cm 2
clp*;* 3 ' 10 cm (first illumination) and mf~41013cm-3 P aP%""-5 ' 10 14cm
(second illur,',.ation). E. + 0-38 ev, (i) Recording of the relaxation
,~3 8 - 10 3CM-3 08CM-3
pulses without constant illumination for Pole and 6PP43- I
yieldedt m qIev1O9cm_3. sec- 1 and a N5 '10-17em2. (2) Recording of Apbn
0 P1 -3 8 -3) yieldeds
with constant illumination (POI~46* 1c, cm and 6P-*13 -10 cm
MoqIrj1O9cM_3 . sec-1 and a PIR-17 * 10-17CM2. (q - capture cross section
of a photon by an electron at the level MI I - intensity of exciting
light.) EV + 0.45 ev: 4Pbn was studied as a function of time. It was
found that for t < 0.2 sec carriers localized at centers with Ev+ 0-30 ev
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31~81761/oO3/011/001/o=/6
Kinetico of photoconductivity in B102/B138
and for 0.2 ~t( 0.6 aec carriers localized at E + 0-38 ev participqted
v
in relaxation. Por t> 0.6 see the carriers taking part in ;7elaxation j
were localized in centers with the following parameterss
f410-17 2 9 -3
cm an~ m qI - 10 am see they belong to the (E + 0,45 ev)
P 0 v
level. Finally the relaxotion of photoconductivity was studied which
was connected.with electron transitions from the valence band to the
(BV - 0.16 ev) level. This level was found tobe an effective electron
'i a cross section of (I tv1O -13-10-15 2.
trap, witl 1 -19 ' 2 cm For holes the trapping
cross section was only " 10 cm . Resulti Exposure of high-purity
p-type siligon specimens (resistivity ~ -110 ohm-cm; oxygen contenti
~V5'1015cm-3; hole concentration in the darks 8*108CM-31 Fermi leveli
0.2 0.) ev distant from the edge of the valence band) to a fast-neutron
flux 13 2) 14 3
r410 n/cm with Pyl Mev led to the appearance qfrvIO defects /Cm
in the forbidden band. The authors thank B. M. Vul, S. M. Ryvkin,
L. D. Paritskiy, I. D. Yaroshetskiy, G. N. Galkin and B. S. Kopylovskiy
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30769
S/161/61/003/011/)01/056
Kinetics of photoconductivity in ... B102/B138
for remarks, critics and help. There are 10 figures and 5 referencess
4 Soviet and I non-Soviet.
ASSOCIATIONt Fizicheskiy institut im. P. N. Lebodeva AN SSSR Moskva
(Physics Institute imoni 11. 11. Labodov AS USSR, Moscow)
SUBMITTED: April 29, 1961
Fig. 1
Ica-if
E
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V, 20 0
29301
S/053/61/075/002/004/007
B125/B102
A LIT HOR s Vavilov, Y, S.
TITLE: Processes of radiation ionization in germanium and silicon
crystals
Pk;itIODICAL: Uspekhi fizicheskikh nauk, v. 75, no. 2, 1961, 263 - 276
TEXTt The author restricted his investigation to photoionization and
ionization under the action of charged particles, when valence electrons
are liberated in semiconductor crystals. Ionization of impurity atoms as
well as thermal and impact ionization in a strong electric field were left
Unconsidered. The experimental arrangement is illustrated in Fig. 1.
Measurements made on silicon single crystals confirmed theoretical
predictions concerning the effect of an external electric field upon
photoionization. In the spectral region corresponding to valence band -
conduction band transitions, the edge of the absorption band is shifted
considerably. In case of 0.8 - 0.911 wavelengths, the field applied raises
the absorption coefficient strongly I- This phenomenon is a true "field
effect", and is not associated with carrier absorption. B. M. Vul,
L. V. Keldysh (ZhETF 1j, 1138 (1958)), F. F. Vollken::hteyn (Trudy FIAN 1,
123 (1937)), and K. I. Britsyn are mentioned in thia connection. '"he
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293UI
S/05 61/075/002/UO4/GO7
Processes of radiation ... B125YB102
quantum yield of photoionization in crystals with p-n Junctions is deter-
mined along with the spectral dependence of the quantum yield of p'.'Icto-
ionization in germanium crystals. This investigation of photoionization
inside the main optical absorption band of germanium and silicon showed
that the quantum yield exceeds unity by far if the photon energies are
sufficiently high. M. N. Alentsev, S. I. Vavilov (Sobr. soch., t. 2, M.,
Izd-vo AN SSSR, 1952, str. 293), F. A *Butayeva, V. A. Fabrikant (Izv. All
SSSR, ser. fiz. 21, 541 (1957)f S. Koc, 6eskoslov. 6asopis pro fiziku,.~,
668 (1956)), F_ Tn-ioncbik, 6eskoslov. 6asopis pro f,iziku, 7, 651 (1957)
are mentioned in this connection. If the photon energies are a multiple of
the forbidden band width (as with X-radiation and t-rays), the quantum
yield will be proportional to the photon energy: q - Wl/t. ld. V. Chukichev,
and V. S. Vavilov (Fiz. tv. tela, 3, 935 (1961)) found 1-.- 2.3 t 0.3 ev
in their study of onization in germanium single crystals that were gamma-
irradiated by a Co~O source. The same had been found by the Czechoslovakian
physicists Dragokupil, Malkovskaya, and Tauts (Ca. J. Phys. 1, 521 (1957)).
In case of ionization in germanium and silicon crystals under the action of
fast charged particles, the energy per electron-hole pair does not depend
upon the particle energy. V. S. Vavilov, L. S.Smirnov, V. M. Patskevich X
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Processes of radiation...
2930i
S/05 61/075/002/004/007
B125YB102
(DAN SSSR 112, 1020 (1957)) are mentioned. There are 11 figures and 30
references'T__~3 Soviet-bloc and 7 non-Soviet -bloc. The three most recent
references '.o English-language publications read as followit 6. Plann,
W. Van Roosbroeck, J. Appl. Phy6. ZI, 1422 (1954); K- MacKay, 11hys. Rev.
108, 29 (1957); P. Wolfe, Phys. Rev. 21, 1415 (1954).
Fig. 1. Experimental
arrangement.
0 0
Fig. 1 41thpld COON11YIP
Legend: (1) Monochromator
slit, (2) silicon, (3) copper
rod, (4) PbS photoresistor,
5) shield, (6) evacuation,
light, (8) strong-field
M
region.
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pbs
O'godola
141
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VAVILOV, V. S ~; SFWVAj~ Ii ---V CHAPNIN, V. A.
"On Defects Introduced by Fast Electrons into S"licon DOped Irl Lithi""
Paper was submitted at the International Conference on
Crystal Lattice Defects at Kyoto, 7-12 Sep 162
(for Vavilov, v. s.) P. N. Lebedev Inst. of PWsica
Leninsky,Prospect 53, Moscow

39)(19
S/120/62/000/003/042/048
'2V, 33co E032/E114
A.UTHORS: Plotnilkov, A.F., Vavilov, V.S-_, and Kopylovskiy, B.D.
TITLE: An apparatus for studying the spectra and kinetics of
photoconductivity in semiconducting crystals
PERIODICAL: Pribory i tekhnika eksperimenta, no.1, 1962, 183-187
TZXT: The apparatus was designed for studyi-1--g photo-
conductivity in single crystals in the infrared part of the
spectrum at low temperatures. A block diagrn-a of the apparatus
is shown in F-Jg.l. The infrare6 radiation is taken from an
'!*~C-12 (IKS-12) monochromator and is focused on the specimen 0
by a system of mirrors. The radiation reaching the specimen is
par'tly raflected on to,a bolot:iotor 5 whose output is fed into
an aiiiplifier tunod to 9 c.p.s. This is used to control the LIV,
incident intensity. The specimen is placed in a convantional
metal cryostat and maintained at -100 OK. Thick germanium and
silicon filters -r. are used to reduce scattered radiation. ' The
specimen is connected by short leads to the input stage of an
ai,xiplifier, which is in the forin of a cathode follower with double
screening and negligible grid current. The double screening
Card 1/1--.
Z

S/120/62/000/003/042/048
An apparatus for studying the spectra... E032/E114
ensures low input capacitance. The input stage is connected to a
narrow-band amplifier tuned to 0, c.p.s. which is followed by a
sync1ironous detector coupled to the modulator. The sensitivity is
0-5 x 10-8 V/division with an input resistor of 5 x 1o13 ohm.
The photoconductivity-spectrum and the incident spectrum are
recorded on a pen recorder chart. Both a.c. and d.c. operation is
possible. Amplifier circuit diagrams are reproduced. The appara-
tus has been used to measure p%otoconductivilty spectra of fast
neutron-irradiated silicon crystals. An account of the results
is given else;..here (V.S. Vavilov, A.F. Plotnikov, J.Phys.Chem.
Pergamon Press, 22, 1961, 31). Studies of the kinetics
Solids of
,
impurity photoconductivity carried out with this apparatus have led
to a determination of the cross-section for carrier capture by
levels associated -.-rith structural defects which are produced-in
p-silicon after irradiation by fast neutrons#
There are 6 figures.
ASSOCIATION: Fizicheskiy instit 'ut AN SSSR
Card 2/p (Physics Institute AS USSR)
SUBLMITTED~- October 6, 1961

S/181/62/004/005/009/055
B102/B138
AUT".,0'J'6: Vavilov, V. S., Smirnova, 1. V., Chapnin, V. A.
TTTL:': The interaction of lithium atoms introduced into silicon
with the radiation defects of the structure
,ZIGDICA7: rizika tverdogo tela, v. 4, no. 5, 1962, 1126-1131
.?z A -
TEXT: A-he authors studied the interaction of Li impurity atoms in Si
sin '-1e crystals ,-.ith 'the structural defects that were produced by fast-
electron bombardment. The Li impurity was introduced by diffusion from
a Sn-Li melt containing 0.2 - 1;f) Li. Li equilibrium concentration in
Si was reached at 550-0650 0C. The Li samples were p-type 0-150 ohm-cm)
and cut out of sinEle crystals. After introduction of Li the p-type
samples uere transformed to n-type with carrier concentrations of
14 16 -3 + a
shallow
3-10 _10 cm Since Li formed oxide ions LiO , which have .
donor levels and are relatively stable at room temperature, the carrier
concentration (n) equals the sum of the ions Li+.+ LiO+. 4lectron
boribardment (0.9 mev) took place at room temperature. At Li concentrations
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5/lal/62/004/005/009/055
The interaction of lithium atoms ... B102/B138
Of 3-1014 _ 5-1015CL-3 two level groups were found in the upper half of
the forbidden band: E -0-17 and 0.4 ev. For the level E which is filled
c b ' . I
with electrons 1, b=0.17 ev is found. When the irradiated samples are '4
I k. 0K t6 carrier concentration was found to be greatly
I'leated to 330-350
reduced. The results, presented by a curve, which has thice sections,
can b,o described by
Ae Be Ce
no
TI < -r2 < _T3-
The effective diffusion coefficient Deff ~ 0.111o Do, Do is the diffusion
coefficient of Li when O'is absent. There are 2 figures.
A~JGCIATIOLT: I'lloskovskiy gosudarstvennyy universitet im. M. V.
Lomonosova (moscow State University imeni M. V. Lomonosov)
SUBI~.,.'ITTED December 8, 1961
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S/181/62/004/305/G'50/055
B 16 3 / B 1 _5 13
AUTHORS: Malovetskaya, V. M., Galkin, G. IN., and Vavilov, V. S.
TITLE: The spectrum of radiation defects in silicon
PERIODICAL: Fizika tverdogo tela, v. 4, no. 5, 1962, 1372~1374
T EX 1 2 :Aftei~ electron irradiaticn of silicon local energy levels are found
4 ,
.1 the forbidden band at 0.17 ev and 0.4 ev below the conduction band
(acceptor levels) and 0.27 ev above the valence band (donor level). 'V'Ihile
the two acceptor levels have been shown to correspond to an association of
a vacancy with oxygen and phcsr~orus respectively, the nature of the donor
level remained unknown. p-ty2e silicon crystals wizh varyine oxygen content
were drawn from auartz crucibles and irrad 4ated -Ni'h 1 Mev elect-,Dns from
an electrostat4c zenerator at 17 + 10C. The oxyCen concentra-.-Jon
determined from the intensity of the infrared absorption b_and at 9.1 =dcrons.
The position of "he energy levels and the defect concentration were deter-
minea from the temperature dependence of the charge carrier concentrat-Loa
measured by The Hall effect. This is better than measurine res1stivity or
life-time at constant temperature, as the latter Give less precise
Card 1/~

s/1 a I /62/rC,4/G'v V
The spectrum of radiation ... B163/B136
info-z-ation on the respect-ive influence of different aimultanei)usly
exi.3ting defects. In silicon specimons drawn from quartz cruciblet; wi th
an oxygen concentra-tJ on of (2-3) -1017 cm-3, a donor level' was fi~und
k, -Y
0.27 ev above the vaience ban,'. I' was rather stable and could cn!
above 3000C. p-type silicon produced by zone multing in vacuum withou--
a cruc4ble with an oxycer, concentration af about 5-101~~ crr-3 s`rwed =airlY
other defects at levels of 0.21, + 0.01 ev above the valc~ce bank.. Thi3
wa3 determined from the position of the For;;;i level when half of t-e defect
levels were occuDied. T'he 0.21 ev defects were much less stable t-ar, t,-,e
0.27 ev ones, and annealin.f, waa noticeable at room tem;;eralure. e
temperature dependence of the hole concentration was nea5ured be-.ween 125
and 4GOOC for specimenA annealed bet-ueen 17 and 1200C, and from t*,4-s the
a-nealinig activation energy was found to be 0.72 + 0.04 ev. The 0.27 ev
defects Pay be due to interaction between oxygen 7ith interatitial atozs.
The much slower rate of form--tion of the +0.27 ev defects as compared with
the -0.17 ev defects is attributed to the fact that interatitial a;oms have
CL I 'M
than vacancies. 0.21 ev defects -~,,2re alco foun' 4n ~ - F.
Plotnikoils investigations on the spectra of stationary photoconductivity.
There is I figure.
Car"' 213

.., C) / G 5
S/lb 02/004/005/0:~
Bi 38
5-ation ... %',03 COIl
Of rad, ;,I! C'SSRI
The tu Vos cow
F.izichosidj inst- T ebedev kS USSR'
ASSOCIAnnON: (physical -,~,,,titute
'February 57 1962
3/3

,)q, ~ 700
37949
S/161J62/004/005/c,51/055
B163/B138
;U'AHORS: Nolle, E. L., M-alovetskaya, V. M., and Vavilov, V. S.
TITLE: The effect. of oxygen on the life-time of minority carriers
in p-type silicon
C,.L; Fizika tverdogo tela, V. 4, no- 5P 1962, 1374-1376
TLEXT: Sindle crystals of p-type sJilicon were obtained by zone melting
without a crucible. Very low oxygen content was achieved by zone
refinement in a hydro.Nen atmosphere or in vacuum. In the top part of the
a;ngle crystal the oxygen concentration was increased by making part of
the last passaCe in an atmosphere of moist hydrogen. The oxygen
concentration was determined from the intensity of the infrared absorption
band at 9.1 microns. The life-time was measured by B. D. Ropylovskiy's
phaze method at a low injection level. 'With oxygen content increasing from
5-10 16 cm-3 to 1-5'10 17 cm-3 the carrier life-time.increases from 4.6 to
32 microseconds. Its temperature dependence was measured between ;20 and
4300K and was found to diminish with temperature. The decrease is less for
specimens with higher oxygen concentrations, and below 000, it increased
Caral 1/2

S/1 al-/62/004/005/C-51 /05z 5
The effect of oxygen on the ... B163/B138
&&rain, indicatin_- the existence of trap levels. Below 00C the life-time
was reduced by biaslighting, and increased above. The temperature
deDendence of life-time In specimens with low oxygen content followed
th~ dependence calculated for a recombination level with an activation
energy of 0.27 ev. The temperature de endence of life-time for a specimen
with an oxy6en concentration of 1-5.lof7 cm-3 cannot be de6cribed by the
statistical theory of Shockley and Read for one recombination level. The
tremendous increase with rising oxygen concentration must be due to the
interaction of oxygen with impurity atoms, dislocations and defects of the
vacancy - interstitial type, to form recombination centers in silicon. It
appears that the resulting recombination centers- have small cross sections for
the capture of minority carriers. There are 2 figures.
i'MCCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR, Moscow
(Physical Institute imeni P. N. Lebedev, AS USSR,Moscow)
SUB'.,..-ITTED; February 5, 1962
Abt
Card 2/2

S/~81i)62/004/007/033/037
B111/B104
c,
AUTHORS: Vavilov, V. S., Calkin, G. N., Malovet8kaya, V. M., and
Tlo-tnikov, A. F.
TITLE: Photo and thermoionization energies of deep level
radiation defooto in Si
PERIODICAL: Pizika tverdogo tela, v. 4, no, 7, 1962, 1969-1970
TEXT: Zzoerimental results of thermal and photoionization are compared
by utilizing a fact recently discovered in the annealing of p-type Si,
namely that the difference in stability of two olosely.adjacent levels of
the centers reBijlting from 1 Ylev electron bombardment amounts to
E + 0.21 ev. Pig. I shows thatIthe raising of the level balances the
v
disappearance of charge carriers (holes) on the donor level (3 + 0.19 ev).
This defect is stable even at 2000C. There are 2 figures and T table.
ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR Moskva
ONlysics Institute imeni P. N. LebedeY AS USSR Moscow)

S/181/62/004/003/015/045
B108/B186
AUTHORSt GippiuB, A. A., and Vavilov, V. S.
TITLEt Radiative recombination on dislocations in germanium
PERIODICAL: Fizika tverdogo tela,, v. 4, no. 9, 11062, 2426 - 2433
TEXTt A mirror monochromator and a lead sulfide phot.oresistor were used to
investigate the radiative recombination in Ge crystals whose dislocation
density ranged from 5-10 3 to 1-104 cm-2 and whose electron equilibrium
13 16 -3
concentrations varied between 5.10 and about 10 cm . At nitrogen
temperatures, an intrinsic band was establish6d at 1.71p, due to indirect
band-to-band transitions. Another band, established at 2 - 2.5p occars
only in crystals which have dislocations and are the result of carrier
transitions between local levels. It is better resolved in the case of
high electron concentrations and it shows recombination levels at a
distanae of 0.22 and 0.14 ev from the conduction band. Probably another
level or level group exists at a distance of about 0.18 ev from the
conduction band. The half-width of the emission line related to the
Card 112

5/181/62/004/009/015/045
Radiative recombination... B106/B166
transition of holes to one of the levels equals 0.016 ev. The intensity
of the intrinsic band is proportional to Im (I is the injection current,
m----,2). contrary to expectation, the intensity of the dislocation band
is not linearly dependent on I, because the reconbination uenters are
saturated. The shape and intensity of the dislocation band-are strongly
affected by the surface-treatment, this beihg'due to different filling of
the levels. There are 7 figures. I
ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva. AN SSSR, Moskva
(Physics Institute imeni P. N. Lebedev AS US.-JR, Moscow)
SUBMITTEDt April 14P 1962
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L0904
S/1 81/62/004/009/044/045
6, 2), B100166
AUTHORS: Smirnov, L. S., Vavilovp V. S., and Gerasirienko, N. 11.
TITLE: Kinetics of silicon recombination radiation
PERIODICAL: Fizika tverdogo tela, v. 4, no. 9, 1962, 2628-2629
TEXT: The oossibility o." studyinIg the kinetics of silicon recombination
radiation --s examined. RectanEular current'pulsas ;,ere fed into Si
crystals .-.-ith .-n junctions. The recombination radiation fror, the
crystal waslta~en by a Fhotomultiplier, amplified.with a broad-band
amplifier and observed with an oscilloscope. The~crystals hadbeen
produced by diffusion of phosphorus and by fusing alum1num on to the
surface. The injection coefficient was assumed to remain constant up to
current densities of 10 a/cM2. Results: The attenuati'on of recombinAtion
luminescence can be well described by an exponential law. The time
constants of att'enuation arie approximately 2.7 microseconds for crystals
with diffused junctions, 1.5 microseconds for crystals --vith fused
junctiorfs. 7,"hen the crystal is cooled to liquid nitrogen temperaturr- the
pu~lse amplitude does not decrease in proportion to the change in the
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AUTHORS: Smirnova,
TITLE: Radi4tion
PERIODICAL; Fizika tverdogo
h4163
3/181/62/004/012/003/052
B104/B102
1. V., Chapnin, V. A., and Vavilov, V. S.
defects in lithium-doped silicon
tela, v. 4, no. 12, 1962, 3373-3380
TEXT: The effect of' lithium on the formation of stable radiation
defects in silicon and on the annealing of*these defects is studied by
.determining the temperature dependence of the carrier concentration from
the Hall effect. The lithium was introduced into Si sin-le crystals by
diffusion annealjng (~50-65000 from a tin-lithium alloy. The single
crystals had a resistivity of 100 ohm-cm; af -ter doping they had n-type
conductivity. The carrier concentration Jay between 3-104 and
17 -3.
2-10 cm The specimens were irradiated by 0.9-14ev electrons at roor~
temperature. Results; In n-type silicon with lithium up to concentrati6po
17
of (1-2)-10 cm-7, shallow energy-levels arise in the range from 0.06
to 0.14 ev below the bottom of the conduction band, which are related to
primary radiation defects, e.g.,
to pairs of interstitial atoms and
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5/161/62/004/012/003/052
Radiation defects in ... B104/B102
vacancies which are separated by different distances. The lithium in the
Si crystal interacts hith these defects. Such interaction is similar to
the processes that occur during the annealing of genetically unrelated
vacancies and interstitial atoms. The trapping radius has the same order
as the lattice constant, (r min ' 5.4-10-8 cm). In crystals that, after
part of the lithium has been deposited in the defects, are again of p-type
conductivity, the levels 0.45 ev, 0.28 ev and 0.21 ev were observed above
the top of the valency band. The centers corresponding to the level
Ev + 0.26 ev did not disappear completely even during annealing for
several hours at 4500 C and above; those corresponding to the level
EV + 0.21 ev disappeared completely during annealing at 450 0C. There are
4 figures.
ASSOCIATION: Moskovskiy gosudarstvennyy universitet im. M.V. Lomonosova
(Moscow State University imeni M.V. Lomonosov)
SUBMITTED: June 16, 1962
Card 2/2

S/1 81/62/004/009/040',45
Kin,w~tic3 r-C silicon recombination ... B100186
lifetime. Tlnis is explained by a shift of the recombination radiation
band, cc rrt!v, pond in6 to band-to-band transitions, into a region of higher
sensitivity of the photomultiplier. There are 2 fij,-ureB. I/'-
ASSOCIATION: 'Fizicheskiy institut im. P. N. Lebedeva AN SSSR, Moskva
(Phyaics In,-titute imeni P. N.. Lebedev AS USSR-, Moscow)
SUBMITTED: June 4, 1962 1 -
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44168
S/181J62/004/012/015/052
B104/B102
AUTHORS: Vavilov,.,,X..S.,, Plotnikov,'A.F., and Tkachev, V.D.
TITLE: Invebtigating structural defects in silicon single
cryatals by reference to the photoconductivity
PERIODICAL: Fizika tverdogo tela, v. 4, no. 12, 19629 3446-5454
TEXT: The photoconductivity spectra of p-.and n-type Si single crystals-
with different oxygen, boron, and phosphorus concentrations, irradiated
by electrons (-1 Mev) from the electrostatic generator of the Laboratorts
tfiziki poluprovodnikov (Laboratory of
,1 the Physics of Semiconductors)
of the FIAN at 100 and 3000K, were investigated with a recording
spectrometer designed on the basis of the OKC-12 (IKS-12) monocbromator.
The specimens were plates (15-2.5-0-8 mm)''Nith palladium contacts
(p-type specimens) or witb zinc contacts (n-type specimens). Results:
Trradiation leads to the appearance of a large number of discrete levels
in the forbidden band. The dependence of the shape of the photo-
conductivity spectrum on the position of the Fermi level, which is
related to the excitation of electrons on the different levels, shows
Card 1/3

S/181/62/004/012/015/052
Investigating atructuval defects B104/B1O2
that all levels (Fig. 11) can be related to defects. The higher
sensitivity of photoelectric measurements as compared with electric
measurements made it possible to prove the existence of a series of
centers with different ionization energies. In Si single crystals,
irradiation by neutrons produces the same defects as*by electrons. The
radiation defects which determine the photoconductivity spectrum of Si
in the range of 2 to 6 p, are not Frenkell defects. Irradiation3 at
1000K showed that at room temperature not only simple Frenkell defects
exist, but also associations of these with other types of defects. This
makes it possible to study how such associations are formed and to
determine the characteristics of defect diffusion. Electrically active
impurities (Cu, Au) with concentrations of 1011 to 1012 cm-3 could be
identified by studying photoconductivity spectra. There are 12 figures.
ASSOCIATION: Fizicheskiy institut im. P.N. Lebedeva All SSSR Moskva,
(Physics Institute imeni P.N. Lebedev AS USSR, Voscow)
SUBMITTED: July 6, 1962
Card 2/3

U177
S/181/62/004/012/031/052
B125/BIO2
AUTHORS: Plotnikov, A. F., Tkachiv, V, D-j and Vavilov, V. S.
TITLE: The photoconductivity spectra of monocrystals related with
residual impurities
PERIODICAL: Fizika tverdogo telat v. 4, no- 12, 1962t 3575-~577
TEXT: The photoconductivity spectra of siIicon monocrystals (~,1000 ohm-cm)
were examined at 1000K at constant and alternating excitation (modulating
frequency of the light 9 cps). The crystals were either produced by
zone melting in vacuo or were grown in quartz-crucibles. The measuring
apparatus, described by A. F. Plotnikov et al (PTE P3, 1962) recorded
variations in the dark conductivity up to-10-6. The A-dependences of the
relative change A d/dI in the photoconductivity of p-type sillcon
monocrystals of 500 and 75 ohm-cm, have the same step-like form. I is the
intensity of the exciting light. The photoconductivity beyond 3.2 p may
be related with the known donor level of gold which lies 0-35 ev above
the v-band. This level is due to centers whose concentrations vary between
10 11 3
10 and 10 cm- . This concentration of monocrystale produced in quartz
Card 113 (D, S1ao14z1w,1eo_3/54Z10,9,e

S11 a 1 /62/004/012/031/052
The photoconductivity spectra ... B125/B102
dishes is higher by one order of magnitude than that of silicon produced
by vertical zone melting in vacuo. The level at 1.8 g corresponds to
bipolar excitation, the level at 2.2 4 corresponds to the acceptor level
lying 0-54 ev below the bottom of the c-band and the level 2.8 g arises
from bipolar excitation by the copper level E v + 0-49 ev. In the latter
case, minority carriers (electrons) are excited by double optical
transitions to the conduction band. The level in the region 2.3 p of the
4-dependence of 8 a/61 is evidently due to electron excitation from the
gold level E a - 0-54 ev to tha conduction band. The broader level below
2 g might be due to bipolar electron excitation through 2 levels. ""he
shape of the spectral curves of the photoconductivity of p-type silicon
monocrystals (doped with gold up to 5*1015 cm-3) confirms the above
assumption that the impurity photoconductivity in unalloyed Si crystals
is cauced by gold atoms. In Si monocrystals produced by zone melting in
vacuo without any crucible the gold concentration is found to be
10 10 - 10 11 cm-3 and the copper concentration 10 11 - 10 12 cm-3. In Si
monocrystals grown in quartz crucibles or by vertical zone melting the
Card 2/3

The photoconductivity spectra ...
S/181 62/004/012/031/052
B125YB102
,residual impurities, copper and gold, produce local centers with deep
levels.in the forbidden bands. There are 3 figures. ..
ASSOCIATION: Fizicheskiy institut im. P., N.-Lebedeva, AN SSSR, Moskva
(Physics Institute imeni P. N. Lebedev AS USSR, Moscow)
SUBMITTED: July 10, 1962
Card 3/3

il I
PLOTNIKOV, A.F.; XOPYLOVSKIY, MP~
w
Apparatus for studying the spectra and kinetics of photoconductivity
in semiconductor crystals. Prib. i tekh. eksp. 7 no.3:183-187
My-je 162. (MIRA 16:7)
1. Fizicheakiy institut AN SSSR.
(Photoconductivity) (Semiconductors)

LOTKOVAY E.N.; V~'JILOV,_~ OBOIZVj N.N.
Infrared absorption spectrum of silicon irradiated by fast neutrons.
Opt.i apektr. 13 no.2:216-221 Ag 162. (MIRA 15:11)
(Silicon-Spectra) (Neutrons)

VAVIIA)V, VOSO
Procesiseo of radiation ionization in the geramnim and silicon
crystaloo Analels mat 16 no.3:181-196 JI-S 162,

VAVILOV, V.S.; YJJASHNIKOV, S.G.
Photoelectric phenomena in semiconductors (Second International
Conference on Photoconductivity). Usp.fiz.nauk 76 noo4:749-758
Av 162. (NIRA 15-7)
(Semiconductors) (Photoconductivity-Congreases)

VAVI,pV, Vjktor.Sergeye-vi.ch; DUBINOVA, V.Ya.y red.; SIIKLYA-'Iv S.Ya.)
tekhn. red. Semiconductors] Deistvie izluchenii
,ffect of radiation on +
[F 3. 264 P.
iloskvay Fizma~gjz~ 3!)6 (mjRA 17:2)
na poluprovodniki. -,

_L_1555_6,,wQ EWT(1)/E7or,(k)/E~(m)/BLIS/EFC(b)-2 'AFFTCY~SD/EW-3
rz-4 AT/ UP (C),_
~ACCESSION NR: AP3003876 3/018-1/63/X5/007/1826/1,829
~IAUTHORSj Tkach~vp V* D.; Flotqik~vj A, F.; Vavilov, V. S.
TITLEt, Spectra of photoconductivitoin n-type silica bombarded with high-speed
electrons
SOURCEf Fizika tverdogo tela~ v. no. 7, 1963, 1826-1829
TOPIC TAGSt photoconductivity, bilica, n-type, electron, high-speed electron,
conduction bond, valence band, forbidden band, center , defect
ABSTRACTi The photoconductivity of n-type silica was studied by means of the
-setup described by A. F. Plotnikov, V. S. Val4vov, and B. D. Kopy*lovskiy (PTE,
No. 3, 183, 1962). The spectra were investigated with oscillating (aodulation
frequency of 9 cycles) and steady excitation. The samples were plates cut from
single crystals and had contacts attached at the ends. The contacts were Pd and
ZnJ, deposited electrolytically. The bombardmeat was effected with electrons of
1 Mev. The temperature of the samples during bombardment did not exceed.25-30C,
and measurements were made at a temperature near 1004. From the measurements
of photoconductivity the authors diagrammed the positions of energy levels in the
-Card 1/1

L 15556-63
"ION NRt AP3003876
ACCESS
iforbidden band. This diagram is shown in Fig* 1 (see Enclosure 1)o The results,
Iliko data on bombardment of p-typo silica with electrons and neutrons, attest to,
!a llset" of several centers, the nature of moet being sks yet unbxplained. The
:"radiation" origin of centers with levels at Fr -oa6, EC -0-40, +0.54, and Fv
i+0-45 Ov io not quentioned. These levels are starred in Fig. 1. Elt is possible
~that some of the levels are initially present in the material, not developing anevi
but merfj).y aj)penring bocauso of tho capturri of equilibrium carriers by defects am
becautic of favorable conditions for "naGurinq photoconductivity in bombarded silica~l
iat low temoeraLures. "The authors exprost; thpir sincere thanks to G. N. QAlkjn,
V-OK-.Malovetskjya.-and ~4 1-I,*ovkina.Vp-for;valuab1e advIce and critical remarks
!and to lye,, Mo U1v"4(ovs-XAYa1 deceased)' for aid
6 f igdroc.
A39)CIATJOH: Fizicheskiy institut im. P. N. Le6edeva AN mg, Moscow (Physical
?Institute, Academy of Sciences, SSSR)
SU M ITTED t 30Jan63 DATE ACQs l5Aug63 ENCLs 01
tSUB CODEi PH NO REF SOVI 005 OTHERi 002
!.Card, 2/1.&--

TKACHEV, V.D.; PLOTNIKOV, A.F.; VAVILCV, V.S.
Nature of local centers with deep-seated levels in slli~:on
Irradiated by fast electrons. Fiz. tver. tela 5 no.11:3188-3191.
N 63. (141RA 16:12)
1. Fizicheskiy institut imeni Lebedeva AN SSSR, Moskva.

L 1303o--63 -- EWT(I)/EWG(k)/EWP(q)/EWT(m)/BDS/EEC(b)-2 AFFTC/'
-3. Pz-4 JDAT
ACCESSION M: AP300b524 S/0181/63/005/005/i4l7/?422
AUMCR: Akimchenko, 1. p., VaVildy., V. S,; PlotnikMA. F.
. ..................
TIME: Spectra and kinetics of pW;oconductivity )associated vith simple
structural defectVin single crystals of germanium
SOURCE: Fizika tverdogo tela, v. OP no. 5. 1963P 1411-1422
TOPIC TAGS: photoconductivity, capture cross section, vacancy, Interstitial, Cre,
Au
ABSTRACT: The authors have investigated the photoconductivity associated with
deep levels of radiation effects arising during bombardment by electrons (1 mev)
of very pure single crystals of Ge and of single crystals alloyed with Au. They
conclude that a detected level of E sub V + 0.42 ev., belongs to an interstitial
atom. 'The caoture cross section corresponding to relaxation at the latter level
vu-- computed to be 3 times 10 Gup -17 Sq/cm- From this value the effectiveness of
ins6rting centers and the results fell within the limits of expartmntal error.
"In conclusion tine autJiora consIder It, their pleasant duty to express thanks to
M. I. Iglitsy*n for discussing the resUts., and to M. L Ginzburg and Ga Fs
!-- --Orig. art. has: 10
Proshko for supplying the single crystals of german um.'T
figures Association: ITLqta of Pllysics, Academy of Sciences, SSSF.
Card

VAVILOVP V. S.
International C-onference on Defecto in
September 7-12, 1962, Usp, f12. nauk 79
(crystals-Congre see it)
CryBtals held at Tioto,
no.ltl53-159 Ja 163.
(MIRA 16: 1)
It

L 24498-~-c F.wl~(i ) /E,~G(k )IZ~aFtm) II:; pc )/ E F Fn2 /T/EWA (h) Pz-6/Pr-4/Peb/
Pu-4~ IJ c f r' r) /A FIqD ~ t A `t)/4 F--TR G G/ A T
AGGEWION MR AW4040591 BOOK SIMITA79N
v vilov, Viktor gergey2vich
-.- - --- -- ~I 1~
The effect of radiation on semiconductors (Deystriye ftlucheniy na poluprovodniki)g
MOSCOwt Ulns., biblio4 15pooo copies primted.
Fizmatgit 1963, 264 P,
Series notet Fiziki poIuprcrodr,.I*,-cv I poI-upmvodnikov-y-*kh priborov.
TOPTC TAGSt electronics, physics, radiation effect, semiconductor
P'RPI'-5F AIM C('V-MA(,'Izt The bo~ok presents the physical concepts of the effect of
ra~,Ialli-n on semiconductors. The processes of ab-
and tonizatIon tn pagz-:Ing
--r, 71,
T-
7-2 10T
fur ap'Ictalties.
Ov
, '' ~ I I

L
ACCEWICH mR Am4040591
TABtE OF-CO14TENTS fabridged]$
Foreword - 7
Ch. 1. Light absorption of sz-videanductors -- 9
r'r., 1T, PII-.otoianizaticn ar-d p-h,~rt.oconductivlt:r in semiconductors 57
Ir, tY,.e ~,-%-usapa of hiph energy charged
particles -- 115
C'h.
TV, RadiafAon recembinatIon in se-rdeonduatore; posalbiiit,L" -,r amrIffyinw ;nd
by ra~pjd electrons,
A 1-11Q
7
OTHOt 184
Corti 2/2

VAVILOV, V.. S.; MCHEV, V. D. ; SMICHENKO, A. N.
"On the nature of local --enters w1t.r; deep em-rggy ie*ze,,.,,~ in IAJ
bY fast' electrons."
report submittQd f'or S~mp on Radiation Dwmge in Seml-ondu,--tors, -ho,7al-Imont,
16-18 jui 64 -

AUTHOR: Vavilovp V. S.; Kolmanskaya#
12o/64/000/00510079/0090
Vn t:o*.IA 0 - 1 0 1 - QMkicbe V, A. V
TITLE- Generation of minority carriers in silicon by fast electron*
SOURCE- Pribory* i tekhnika ekspcrivicnta, rio. 5, 1964, 79-80
TOPIC TAGS: semiconductor reseazch, silicon counter
ABSTRACT. The theoretical spatial diatribution of the ionization energy loss in
Si given by B. Ya. Yui-kov (Zh. tekhn. fiz. , 1958. 28, 1159) hiis been expeiimen-
tally verified. A p-n junction was prepared by diffusion P in p-Si having a
resists-- ty of I ohm-cm. Experimental curves of the average ionization loss vs.
the depth of penetration, for electron bearns with initial energies of 250, 500,
700, and 900 kev are presente(J With,,-i th(-- i5,ual experimental errors, the
,Card

ACCESSION NR; AP4047462
curves show satisfactory agreement with the theoretical curve. Orig. art. has.
2 figures.
ASSOCLATION: Woskovskiy gosudarstvenny*y universitet im. M. V. Lomonosova
(Moscow State University)
SUBMITTED: 13Nov63
ENGL: 00
SUB CODE: EC NO REF SOV: 002 orHER: 003
C-Crd 2/2
7 -9-M,
N-1
mom

=Essiw HRs Ai,4011786
3/0181/64/006/001/0329/0331
AUTHORS: Kryukova,, I. V.j V"apys V. S.
TITLE; Orientation dependence of the formation of radiation defects in n-type
I
silicon
SOURCS: Fizika tvi.,rdogo tela., v. 6, no. 1., 1964s 329-331
.'TO?IC TAGS: radiation defecto n type silicofi, electron bombardment, combination
cvnter, minority carrier, p-n junction, mitiority carrier lifetime, electron flux,
capture cross section,, thermal velocity, carr.ier velocity
ABSTRACT: Determination of orientation dependence is difficult because of the
necessity of working with very thin samples (10-20 microns) and avoiding loss-of
initial direction of incident particles by scattering on atoms of the test materiaL
The authors used a different mothod,proposed by V. S. Vavilov., V. M. Patskevich,
B. Ya. Yurkov,, and P. L. Glazunov (Frr, 2., 1431, 1960), which yields data on
orientation dependence by measuring dependence of resistivity changes on depth of
electron penetration. A single crystal of n-type Si was used. Defects. introduced
by radiation were recorded by measuring the lifetime (t) of minority carriers dur-
Card -1/4

Accmim NRs AP4=786
ing bombardment. To record changes in this lifetimej the authors measured the
short-circuited current (Isc) in the circuit of a crystal with a p-n junction
daring botabardment by a stream of electrons. The number of combination centers
introduced by radiation in small doses is equal to the product of electron flux
(0) ard the rate of defeat production (8) (by ~ is meant the ratio of number of
defects per cu cm to the electron flux per sq, am). The relationship among these
values is then
y0ovf (El Ef).
4here cr is the capture cross section of carriers by the given center,, V is the
thermal velocity of the carriers, and f(Et-Er) is the function of level filling.
Bombardment by electrons of 1 Mev was carried out at room temperature. The rela-
tionship between electron flux and change in short-circuited current (proportional
to lifetime of carriers) for various directions of bombardment is shwn in Fig. 1
of the Enclosure. The observed orientation dependence is associated with the
presence or inter.,;titial positions in a loose lattice of the diamond type. "The
authorn thank S. 1, Vintovkin for his aid in bombarding the samples.0 Orig. art,
has 1 1 figure.
Coed 2/4

=&%SION KRt A?4011786
ASSOCIATION: Mookovakly gaaud&retvenmy*y.unjv0rsit6b. la. X. V. Lomonosova (Moscow
State University)
SUBDa-MM: o%ep63 DATE ArQt Web64 ENGLt 01
SUB -CODFt PH NO RKF SOVt 002 OTHERt 003
Card

ACCESSION NRI AP4034920 S/0181/64/006/005/1406/1412
AUTHORs Vavilov, V. S.; Nollso' E. L.; Yagorov, V, D.; Vintovkin,
S,
TITLEt Radiative recombination in caAdmium telluride as a result of
excitation by fast electron pulses
SOURCE: Fizika tvardogo tela, v. 6, no. 5, 1964, 1406-1412
TOPIC TAGS: radiative recombination. cadmium telluride, CdTe, laser
material, stimulated emission, semiconductor
ABSTRACT: The recombination radiation spectrum of CdTe excited by
fast electrons was investigated in th photon energy interval from
0.7 to 1.6 ev and at temperatures betteen 10 and 300K. The p-type
samples with resistivity of % 10 ohmscm were e-zeited by 1 Hev elec-
tron pulses of 2.5 psec duration from an elvetrostatic generator.
The repetition f;equency was 10 cps, and ~the current density per
electron pulse varied betweeen 0o3 and 0.5 mA/cm. Since a 30 hr
exposure to this type of ir-radistLon did not affect the r4combLn&tLm
Icara 1/3

ACCESSION NRt AP4034920
Poo
radiation spectrum, it was assumed that the effect of the formation
of radiation defects could be neglected. It was found that at 10K
the recombination radiation spectrum concists of three intense bands
%ith maxima at photon energies of 1.05 + 01, 1.47 + 0.01, and
1.59 + 0.01 ev. The short-wave emissiZ band is l;cated in the
regio7n of the fundamental absorption band. Analysis of the data
shows that vertical transitions with emission of optical phonons
with zero momentum.occur in CdTe and that the probability of such
processes is high. According to criteria developed in: Basov,
N. G., 0. N. Krokhin, Yu. M. Popov. ZhETF, v. 4, 1961, p. 1203, it
may, therefore, be possible to obtain laser action in CdTe at low
temperatures when the nonequilibrium charge carrier concentration
is considerably smaller than that corresponding to the degenerate
states Orige art. hast 6 figures*
ASSOCIATIONt Fizicheskiy institut imeni P. No Lebedev&AN SSSR
(Physics Inst'LtutelAN SSSR)
'Ccird 2/-3

ACCESSION NRI AP4034920
SUBMITTEDt 20Nov63 DATE ACQs 20May64
SUB CODEs PN NO REP SOVs 004
ENCLs 00
OTHERt 006
icwd

ACCESSION NR; AP4041733 S/0181/64/006/007/2192/2194
AUTHORSt Tyapkina, N. D.; Krivopolenova, M. M.; Vavilov, V. S.
TITLE: Electric properties of beryllium doped p-type germanium
SOURCE: Fizika tverdogo tela, v. 6, no. 7, 1964, 2192-2194
TOPIC TAGSi german-Jum, beryllium, electric conductivity, carrier
density, temperature dependence
!ABSTRACT: In order to determine the upper acceptor energy level of
~beryllium in compensated and higher-resistivity-germanium specil~ensl
!the authors measured the temperature dependence'of the carrier den-
:sity-and of the electric conductivity of doped,germanium plates 2 x,
~x 3 x 15 mm in the temperature range 300--55K. The compensating im-
ipurity was phosphorus. The plates were cut from the ingot perpen-
-dicular to the [111] crystal growth axis. The measurements were
pomade in a double metallic cryostat. A null method was used with a
Card"

1ACCESSION NR: "4041733
'high-resistance potentiometer. The magnetic field reached 4600 Oe.
Height samples from four ingots were tested. The results show that
in all samples the carrier density is exponential in the reciprocal
.temperature. The ionization energy was determined from the slope of
i 3/2 3
'Plots of ln(pT) against 10 /T, and its value (0.064 + 0,003 eV)
.is close to that obtained by others and also close to that calcula-
~tion by the "helium" model, which is thus shown to be applicable to
beryllium in germanium. Orig. art. has: 1 figure and 1 table.
ASSOCIATION: Moskovskiy gosudarstvenny*y universitet im. M. V.
Lomonosova (Moscow State,University)
1,SUBMITTEDt- l3Feb64
isUB CODES sq, EC NR REP SOVj 002
2/4-
~27_
- --------------
ENCL: 02
OTHERs 004

ACCESSION NRs AP4041733
Dependence of carrier density on
the tempemture for different
samples
Sam
tard
3/4
to
01

1-7
dd~
fo
k0 0.0 AD i'av I'D Tto- NO fig-
rx
AWSWICN NRs A4041733 ID2
Values of ionization enerpy in the
Investigated samples

2 3 4-:
V

IS7(2) 0.8 1.4 1.75 0.064
169(l) 0.83 1.5 1.81 0.064
169(5) 0.7S 0.9 120 0.063
184(5) 1.2 -1.4 1.17 0.064
181(6) 6.8 &4 1.24 &064

1
1 - sample no. 2.,,- berylLim density in -Sc,~-3
10 8 phoWoris demity
:4 - ionization energy, eV

C~4
---------- ----------

,ACCESSION NR: AP4039659 S/0181/64/006/006/1718/1723
,AUT11OR: Akimchanko, I. P.; Vavilov, V. S.; Plotnikov, A. F.
;TITLE: Some data on radiation defects obtained through investigations
;of photoconductivity spectra of germanium irradiated with fast elec- i
itrons
ISOURCE: FiAika tvardogo tela, v. 6, no. 6, 1964, 1718-1723
~TOPIC TAGS: radiation defects, fast electron irradiation, p type
igarmanium, n type germanium, germanium, fast electron irradiated
~germanium, germanium photoconductivity spectrum, irradiated germaniual
lphotocnnfluctivity spectrum. forbidden zone
~ABSTRACT: The following types of Ge single crystals have been irra-
idiated by fast electrons with energies ~I Hav at room temperature:
ja) n-type with initial resistivities P of 3 and 56 ohm-cm; (b) dis-
Jocationless n-type I P ^-1 3 ohm-cm; (c) P-type with a residual im-
~purity concentration of loll to 1013 at/cm3. The ohmic contacts were
realized by the deposition of colloidal graphite. Photoconductivity
,spectra were measured at --I 100K in the 1.7 to 10 U wavelength range.
;Card 1/3

fACCESSION NRt AP4039 659
,In the irradiated specimens the Fermi level was located 0.10 to
0.17 ev below the bottom of the conduction band. Some of the conclu-
sions drawn from the results of the investigation are: 1) following
irradiation with a flux of 6 x 1015 el/cmz, the photoconductivity
spectra of n-type specimens showed the occurrence of a structure which
can be connected with electron transitions from local levels E,-0.33,
.Ec-0.37 and Ec-0.43 ev to the conduction band. When the to' ; elec-
tron flux is increased to 3 x 1016 el/cM2 the specimen acquirc~; char-
acteristics of P-type Ge; 2) spectra of type (b) specimens show that
vacancy concentration increases almost proportionally with increased
flux and chat at a certain value of the electron flux there is an
increase (by almost one order of magnitude) in the concentration of
centers which yield a constant distribution of photoconductivity sig-
nals in the 2.5-1.9 u wavelength range; 3) a new maximum was detected
in the spectra of type (c) specimens which occurred in the presence
and disappeared in the absence of bias lighting from the region of
natural absorption; 4) at wavelengths up to 5 U, the spectra of type
(c) specimens showed a build-up of signals connected with electron
transition to level Ev --4- 0.33 ev in the presence of a Ge filter;
when no filter vas used a-.maximum appeared at a wavelength of 3,15 V;
Card 2/3

'ACCLSSION Nil: AP4039659
'5)in nonirradiated type (c) specimens the disturbance which introduces
level Ev-t-- 0.33 ev is due to copper atoms, whila in the irradiated
,type (c) specimens it is due to the joint action of copper acoras and
.vacancies; 6) for the irradiated (c) specimens the hole-capture
cross-section of level Ev -~- 0.33 ev is at 100*K 5 x 10-19 CM2.
i-Orig. art. has: 9 figures.
1ASSOCIATION; Fizichaskiy institut im. P. N. Labodeva AN SSSR,
'Moscow (Physics Institute, AN SSSR)
SUBMITTED: 28Dec63 DATE ACQ: 19Jun64 ENCLs 00
ISUB CODE: NO REF SOV9 007 OTHER: 000
ICard 3/3

L 18851-65 EwT(1)/Dr--(k)/9wV-ra1 f1r-1:KC-( QMM b )I UWA( n)
A-31r-(a)/ESr,(g9) JDAT
ACCESSION NR: AP4043355 S/0181/64/006/008/2361/2368
AUTHORS: Gippius, A. A.; Vavilov, V. S.
TITLE: On the mechanism of radiative recombinatings at dislocationA
in rmanium-- too
SOURCE: Fizika tverdogo tela, v. 6, no. 8, 1964, 2361-2368
TOPIC TAGS: germanium, dislocation net, radiative recombination,
forbidden band, temperature dependence, hole conduction, level
transition
ABSTRACT: The paper is a continuation of the authors! earlier work
on Ge crystals with 103-104 d-islocations/cm2 (FTT, v. 4, 2426, 1962)
which established; (1) the orpsence cf several components in the re-
g that
combination radiation spectrum of diS10CatL0n6 ind'CatLn - I
several levels were active simultaneouslyl (2) a dependence of the
T-ddlation-- band.- pra" le on tjj,~- Fermi level position, indicating hole
Card 1/3

L 188.q-65
ACCESSION NR: AP4043355
transitions to levels in the upper half of the forbidden band;
(3) a sublinear dependence of the dislocation band intensity on
the injection current at high -_,jrrent densi-~es, sucligestinq internal
processes in radiation centers giving rise to saturatio.-..
prescnt gaper 2extends thia work to higher dislocation oe-)sltles
(105--lo cm ) and therefore s,ronger recombination radiation.
which was easier to study and _-esolve. It Was fO'Un,~ t'-iat 17-:
crease of the eqi.;ilitrium or inlectod eleCtro, :~ensitv prcid--t~-
new long- (2.6--2.7 an.~ short -wave ienqt4;,,
or intens-ified intermediate wavelengths (2 4 this indicated
that hole transitions did not start tram tane valence band. The
half-widths 'E anH the positions of the maxima of the dislocatLon
bands were measured as a fuiictlion of tem,-e-ral.urp (RO--200K). Up
to ;~170K the value of '.E was independent of temperatur(.--.
the observations referred t,o 4bove, indicated that hoieE. were (-ap-
tured by excited states and that radiative transitions occurreci
within centers. The observed rLse of 'F with temperature ahovr.
Card 2/3
TMMMM~M_

L 18851-65
ACCESSION NR: AP4043355
c other-band-which was very weak at
--presen 6 of an
lowex temper-Aures-i saturation in--the-de endence of the dislocation
P
band intensity on the injection current showed that radiation cen-,-------
ters were not whole dislocations but jogs, nodes or other irregu-
larities in dislocations. The actual positions of the levels of
radiation centers could not be established from the available data.
"The authors thank U. M. Vul, A. V. Spitsin, and V-.--D. Yegorov."
Orig. art. has: 7 Egures.
ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR, Moscow
_LxPhysics institute AN SSSR)
SUBMITTED: 24,Feb64
ENCL: 00
SUB CODE: SS NR REF SOV: 005 OTHER: 002
Card -3/3

ACCESSION NR: AP4041737 6/0181/64/006/007/2200/2202
AUTHORS: Gippius, A. A.; Vavilov, V. S.; Konoplev, V. S.
TITLE: Determination of the yield of recombination radiation con-
nected with dislocations in gormanium
SOURCE: Fizika tverdogo tela, v. 6, no, 7, 1964, 2200-2202
TOPIC TAGSs recombination emission, quantum yield, dislocation
effect, lead sulfide, photoconductive device
ABSTRACT: The yield is defined here as the ratio,of the numberof
quanta of recombination radiation to the total-dumber of acts of re-
combination on the given type of centers. Since this yield must be,
measured when the dislocations play a predominant role in the recom-
bination of the non-equilibrium carriers, the tested sample was bom-
barded with a beam of -1 MeV electrons from a Van de Graaff accelera-
tor. The receiver was a-.lead-oulfide photoresistance calibrated with
Card 1/3

ACCESSION NR: AP4041737
Ithe aid of a black body. n-type germanium with electron density no
5 X 1014 ce,3 and dislocation density N - 105 cm-2 was used. The
~dislocations were introduced by an abrupt change in the thermal con-
'iditions during the growth of the crystal. The tests were made at
ipproximately BOX. The qu~rjtum yield was found to be quite sinall,
indicating that most recombinations on the dislocations are.nonra-
diative. Some explanations for this phenomenon are discussed. The
,results obtained for the quantum yield and for some related quanti-
ties are compared with data by others. "The authors thank A.' V
Spitsy*n for determining the carrier density in the sample and 1.
;Vintovkin and V. V. Mikhaylov for help with the measurements."
jorig. art. has: 1 table.
ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR
.(Physics Institute, AN,SSSR)
-SUBMITTED: 24?eb64 ENCL: 01
ISUB CGDEt SS NR REP SOVt 005 OTHER: 001

;AC=ION NR: AP4041737 ENCLOSM: 01
Results of detemination of quantum yield
A 06 UIL
TI gw~
I N-10~' am-,
I 1, .7AMS
1
1
4.
4 6.5 5 0.5
0.75 1.1
2.5 62
7.7 3.7
3.1

5
5.2
4
0-5 '
1.0 1.7

3A U 1

6.4 2.2

1.9
7 3.8 Io 1.25
2.25 4.2
7.4 8.2
Iza 1.9
1.7

sample no. 2 (fast-electron density) Miaoamp/cm 3
3 g.10-19 Cm73SeC 1, 4 quantum yield, 104
Coed 3/3

ACCESSION NR: AP4044951
AUTHOR: Vavilov V. S.; Kryukova, I. V.; Chukichey.,_,11. V.
TITLE: Effect of lithium on recombination in n-type silicon bom-
barded by fast eleFE-rons
SOURCE: Fizika tverdogo tela, v. 6, no. 9, 1964, 2634-2637
TOPIC TAGS: silicon, 1.1thium, p n junction, recombination, carrier
mobility, radlation defect
ABSTRACT: This research is tfle result of earlier studies by the
authors (FTT v. 12, 337~, 1962) in wh 4ch it was shown that an In-
crease of '-1h;_- lithium conlent- In sillcc~n containing oxygen reduces
the rate of A-center formation, bind 1_3 ~if ascertaining the
-xtert ~,a whi_h lithium reduces the concentratLnn
-,a t i -~~n I!_5
of the recomtlr
have high mobility and shouid :-,a Ila, ' -~r. !,-f ~-_'s a'
I
relatively low temperatures. The effect of the lithLum wat3
ed by measuring the lifetimes of the minority carriers in the silicon
Card 1/2

L 140,"4-6
NR: AP4044931
by electrons in the presence ~i I I hium--Lmpuri t-tes. - W,thLum was
int -656d- and - its
--r-oduced into the silicon by diffusion at 550
:771 Z.-conten-t- -ranged.- ---from- 0. 1 --to __I-per cent. The Influence of the radia-
6- '' __ ects-, - Aer--lifetime--was determined
i n'-induced-def 7-om-the--, minor y-,aari
t
by measuring the short circuit-current produced-in --- the `~'circuit___of- __a
crystal with a p-n junction exposed to bard radiation. The tests.
confirmed the earlier results obtained by measuring the Hall effect.,
that silicon doped with lithium has a much lower minority carrier
recombination rate and a much loi-ier recombination center content.
The authors are grateful to 17h, R. Panosyan, S. I. Vintovkin, and
T. Granina for help with '_hf~ w~D_-;