SCIENTIFIC ABSTRACT V.K. FROLOV - V.N. FROLOV

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• Collection: Scientific Abstracts
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• Document Creation Date: November 2, 2016
• Document Release Date: June 13, 2000
• Sequence Number: 10
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

ANDROSOV, G.B., vtoroy mekhanik; FROLOV, V.K., gruppovoy inzhener
Efficiency promoters of the motorship "Lesozavodsk." Biul.
tekh.-ekon.inform. Tekh. upr. Min. mor. flota 7 no-5:39-49
162. (MIRA 16:3)
1. Teplokhod "Lesoxavodsk" (for Androsov). 2. Chernomorskoye
parokhodstvo (for Frolov).
(Motorships--Technological innovations)

FROLOV, V. K.
Cand Tech Sci - (diss) "Effect of low-valent vanadium oxides on
the electrical properties of several vanadium-containing glasses."
Moscow, 1961. 15 PP; (Ministry of Higher, Secondary Specialist,
and Professional Education Belorussian SSR, Belo Polytechnic Inst
imeni I. V. Stalin); 180 copies; price not given; bibliography at
end of text; (KL, 10-61 SUD, 219)

Is-. 69875
S/032/60/026/04/06/046
15 BOIO/BO06
AUTHORSs Kitaygorodaklyg I. I., Frolov, V. K~
TITLEs Oxidimetric Determinations of Vanadium Oxide in Glass
PERIODICALt Zavodskaya laboratoriya, 1960, Vol. 26, No, 4v PP. 418 422
MEXTs Vanadium containing types of special glass can be divided into three
groups - glass containing V20 5 and V20 4v glass containing V20 4 and V20,, and
glass containing V20 3 and VO. Oxidimetric methods for the determination of the
two firet-mentioned types of glass were developed. The vanadium oxides are
dissolved by treatment with sulfuric- and phosphoric acids, and 40 sulfuric
acid (the latter for V20 5) (Table 1, solubilities of vanadium oxides)~ It was
found that oxidimetric determinations of V 203 and VO in glass of the third type
are not possible. This is due to the instability of VO in acid solutions; Before
analyzing the glasev its type must be determined, i.e. if addition of phenyl-.
;_~jtthranillc acid to the glass solution produces a red-violet color, the glass
belongs to the first type, if however, the glass solution is blue from the out-
Card 1/5

698 75
Oxidimetric Determinations of Vanadium Oxide in Glass B/032/60/026/04/06/046
B01O/B006
set, the glass belongs to the second type, while solutions of the third type of
glass are green. The oxidimetric determination of V20 5 and V204 (first glass
type) can be carried out in two modified formss either (after corresponding pre
treatment), V204 is titrated with 0-05N KMnO 4 solution, and then (after addition
of phosphoric acid); V205 with 0-05N Mohr's salt solution using phenylanthranilic
acid as indicator, or V205 is titrated before V20 4 (2nd modification). The
procedure is described. In the case of the second glass type, V20 4 is also ti-,
trated with KMnO 4solution, and V203 with MohrOs salt solution, but a special
method must be employed, since part of the V20 3 does not dissolve (or only partly,
together with V20 4) . Glass of this type can only be analyzed if its Fe2+ content
is low. The method ~esoribed was tested by using silicate- and vanadium phosphate
somicond ct I s'P(Table 2, composition). The relative error of the method was
R as
Table 3). Publications by A~ I. Tsvetkov (Ref. 3), V. I. Smirnova and
B: F. Ormont (Ref. 4), and M. A~ Gurevich are mentioned in the paper, There are
3 tables and 5 Soviet references.
Card 2/3

60875
C
Oxidimetric Determination of Vanadium Oxide in Glass S/032/60/026/04/06/046
B010/BO06
ASSOCIATIONt Moskovskiy khimiko-tekhnologicheskiy institut im. D. 1. Mendeleyeva
(Moscow Institute of Chemical Technology imeni D. I. Mendeleyev)
Card 3/3

AUTHORS:
TITLE:
66453
S/072/60/000/01 2/001 /000
B0?1/B056
Kitayaorodskiyt 1. 1., Professor, Frolov, V. K.,
Kuo ChonC
Electrical Properties of Glass of the System
V205 - V204 " P205
PERIODICAL; Steklo i keramika, 1960, No. 12, pp. 5 -- 7
TEXT: The determination of tile quantitative dependence of the specific
electrical conductivity of vanadium glass on the content of vanadium ions
of low valen-.y is described as being important, sinre it is assumed that
the specific electrical conductivity of glass is considerably increased
when increasIng the content of these ions. For tile purpose of investigat-
ing this dependence, V 205 in glass of thn ini'Lial conposition 60/1'3 V2 051 Vx
20d1. P2059 was partially reduced by means of carbon black (V 20 content:
2.61 - 23.60.1Q. 11. V. Petrovykii, Candidate (,;f Technicl sclenoeG, par"~-
cipated in measurements and in th.:~ anallys-is of thc !.I.,~-titn. The
lar(I 1/4

86LL53
Electrical Properties of Glass of the system s/07 6o/coo/o12/CO1/OC8
V2 0 _* V 0 " P,O B021 YB058
5 2 4 5
conductivity of the samples was determined by means of thk~ bridge Wl-~i
014-3), and the thermo-emf by means of the potent iome ter IMITS-1 (F?rV--1).
Results of the chemical analysis of th-~ Class samples are mentioned in
Table 1. The X-ray structural analysis was made by means of the device
V6-500 (URS-50I). The determination of the specific electrical conduc-
tivity of glass of the system V 20 5 - V20 4 "P205 at a temperature of 160
is illustrated in Fig.l. In the system V 205 - V,O 4 '_P2051 L. A. Grechanik,
V. G. Karpechenko., and 11. V. Petrovykh obtained glass wi~ h a negative
thermo-emf and the following chemical composition (in 22-70 V205~
38-42 V 20 4; 38-88 P20 5' It, results therefrom that both n-type and p-typ,~
conductivity exist simultaneously in glass of the system V 205 - V90 4 -
P20 5' The tendency of oxid~lz with semiconductor properties to polymeriza-
tion L;rcatly aff-~.3ts the spec.1fic electrical conductivity of oxido Stimi-
conductor glass. The ronevied jnr~reaa(- of' the vle-trical conduc-
tivitY with an of' flv- V,-,(), C,:nlt~-rt, 17-77 t',
was
Card 2/4

86453
Electrical Properties of Glass of the System S/07'-'/6o/coc/cI2/O01/%C.13
0 - F 05 B021/BO56
4 2
ascribed to an ordering of the gliass structure and to the beGinnin[; of
crystallization. This is proved by an anomalous increase of the act-47a-
tion energy in glass with a V 204 content above 19-J, as -,-.ell as by the
X-ray structural analysis which sh6wied the existence of a,crystalline
phase in glass with a content of 23.60,;'.l V20 4.There are 3 figures,
1 table, and 6 references: 6 Soviet, 1 US, and 1 Japanese.
Card 3/4

Card 4/4
2
21
2,,
2f
.29
3
31
32
33
34
33
86453
S/072J60/000/012/Col/008
3021/3058
160
0 e
1
0
12 16 2 24
V204 ill % by weight

PARTASH, T.Z. [translator]; MIDIDER, R.A., prof., red.; FRCIDV, V.K.'
red.; BORUIIOV, N.I., takhn. red.
[Vdcuum technologyj properties and treatment of glass] Vaku-
umnsia tekhnika; svoistva. stekla i ego obrabotka. Moskva, Goo.
energ. izd-vo , 1961. 158 P. (MIRA 15:2)
(Glass blowing and working)

VEKLICH, P.M.; OSIICHlFKOV, F.P.; YROLO V * NILENDER, H.A., prof**
red.i YIWYUTIN, V.V., red.; RUTICV, II.I., tekhn. red.
[Manufacture of glass for electronic vacuum devices] Tekbno-
logiia elektrovakuumnogo stekla. Pod obshchei md. H.A.Vilen-
dera. Vioskva2 Gos.energ.izd-vo, 1961. 261 p. (KMA 15:1)
(Glass manufacture) (Electron tubes)

OSHCHIPKOV, F.P.; FROLOV, V.K.; Prinimali uchastiye: SAWINA, G.A., inzh.;
LYAYJIOVI;T!,'MMF,I,T.-K-.,-E~zh.; SLIVINSKIY, I.G., inzh.; PARASHINA,
Z.V.P teldmik; NIKIFOROVA, Z.V., tekhnik
Fowiding of ZS-4 glass in pot furnaces. Stek. i ker. lt* no.7:5-8
J1 161. (MIRA 14:7)
(Glass manufacture)

SFMNOV, M.Ye.; FNLDV,-V~~
Rare case of cry*tal growth. Lit.'proizv. no.1:34 Ja 163.
(MIRA 16:3)
(Crystals--Gravtli)

Statistical method for the Interpretation of electric-coundirg
curves. Geol. I geofiz. no.6:106-108 163. (1,11RA 19: 1.)
1. Sibixskly nauchno-isoledovatellskiy institut geologii,
geofiziki i minerallnogo syr1ya, Novosibirsk. Submitted
June 25, 1962.

FRO LD V V.Kh.
Methoa for Using dnIculation data for-thp gra-phic interpretation
of the cur,,rps of electric sounding. Gpol. i geofiz. no.M32-140
165. (~ffRA 18t6)
1. Sibirskly miuchno-issledovatpillskiy Institut geologii, geofiziki-
i mim-rallnogo syr I ya 9Novosibirsk.
y-1-

'le Ct:
1e r,
La th~,
I 74.-A
Y-'

-IROLOV, V.
FROLOV, V. M. and Krylev, 0. V. present
cliemosorntlon of the surfacd of Ge and
substvnces such 25,91 and the compotinds
SO: 71mrn.-l vsesoyuznor,,o shimicheskop-o
i.960, pp 535-43.
compreh...noLve re,,ri,!w of present re.Bow6h
si?+i2V XRXtr4AjbMtWjfP se-niconductin-
A- 3 2nd4dilbh,,- A B"!I.
obshchestv2 im. D 1 i,l1,-ndeleyev3, V. 5)0
on

P" t- p
-IATI-- -u

J. I.""

p
v M

7"T". C-4 ---Ps *A

-n t". n."d J. ~-PG

-T"Id
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mq~- -T-1- J. --to.-C Q .(3-wu) ""I-MV
an- ..T~.

I

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L-r." -u
T%- J. -rgd -9

"0 ft~qd.
---wt-"

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i A Anil",

q-j I - --r u
P-I*ddy pu. j. -3-x~ .I . I-

FROLOV. V.M. (Mosicva)
Using L.V. Untojo*y1ch's variation method for solving probless In
the applied elasticity theory. Inzh,ebor. 24;174-18Z '56.
OWA 10: 5 )
(Elasticity) (Calculus of variations)

BAGDASARIYANJ, A.Kh.; FROLOV, V. -M.; TINYAKOVA, Ye.I.; DOLGOPLOSK, B.A., akademik
Etectric conductivity of alkyllithium solutions In connection with the
polymerization process, Dokl. AN SSSR 162 no.6:1293-1296 Je 165.
(MIRA l8s7)
1. Institut neftekhimicheskogo sinteza Im. A.V.Topchiyeva AN SSSR.

of
,ItuL khimlr~heok-,y L"'~

Ff NS F I I
a:!td on germrmllum~
kh, PN SSSR-

FROLOV, VA
Catalytic properties of germanium films obtained by pyrolysis of
GeH 4 . Kin. i kat, 6 no.2042-345 Mr-Ap 165. (MIRA 180)
1. Inatitut khimicheskoy finiki AN SSSR,
I . - . . . - - .. . . --.- . . . . . , . . . . - . .4

~FROLOVP VOMO
Dependence of acid-defensive conditicned and unconditioned reflexes
in dogs on the force of unconditioned stiNruli. Zhur. vys. nerv. deiat.
12 no.2:267-272 Mr-Ap 162.
(MM 17:12)
1. Voyenno-meditainskaya akademiya Imeni S.M. Kirova, Leningrad.

ACCESSION NRt APS011686 UR/0195/63~'006/002/03z42/'Ojts ""'I
AUTHORI Frolov, V. H.
2d
I TITLE: Catalytic property of germanium films deposited by pyrolysis
of GeI14
SOURCE Kinettka L kataltz, v. 6, no. 2, 1965s 342-31#5
TOPIC TAGSt germanium filmq germanium powders pyrolytLc deposition,,
germanium hydride pyrolysis, film electric property, film catalytii-
property, catalytic dehydrogenation
ABSTRACT: The previously established difference in catalytic proper*,.',-~"
ties between n- an&p-germanium powders prompted a comparative study
of the catalytic properties of germanium films deposited bi pyrolysis
of GeH4 and germanium powder prepared from single crystal germanium
having intrinsic con4uctivity. The purpose was to establish the
effect of the preparation method of the active Ge surface on the
catalytic activity of Ge. The experimental data for Ge powd~ar wet. -e1
obtained earlLar by the author (Kinettka L kataliz, 5, 1076. 1964 1
In the present study determination of the catalytic activitirrpf Gti
C-0116 1/3

L ~413i,65
ACCESSION HR: AP5011686
films and activation energy of chemical on these films was
made or attem ted in dehydrogenAtionlof absolute ethyl alcohol7and
decompositionlof hydra-zTn-ePralividary steps, including synthesis
'67- germanium -ydride preparation-of Go films 100-150 A thick, and
measurement A olect;ic conductivity of the films were described*
Germanium films were deposited on powdered quartz by decomposing 4
GeI14 at 300C in a quartz reactor and.were dehydrogenized by evacuating
tht reactor at 500C, Electrical resistance of the films dep-osited
by pyrolysis of GeH4 on a glass substrate varied with temperature$ I
atmosphere (v&euum or krypton)t-and--other [undefined) operating condi-
tions. The temperature dependence of the resistance of the films 11-
indicated a similarity with Be single crystals.with intrinsic conduc-t
tivity. The activation energy of electric conductivity of the films
was 0.30-0.38 ev in the 50-250C range and up to 0.50 ev at higher
temperatura. The kinetics of the catalytic reactions on Ge films
were studied by the previously described methods* Tabulated data
shbwed' that the apparent activation energy of dehydrogenWon on Go
films was about 10 kcal/mol higher and specific catalytic activity
of the films at 235C 4 bimes lower than the corresponding values for
powdered gormaniumi Those differences are comparable with ~hosa
M",

----------
L 44131-65
ACCESSION NR: AP50IL686
Jobtained by changing the conductivity type of powdered germanium single
1crystals. The attempt to study the kinetics of hydrazine decompositi6a
ton Ge films gave noureproducible results* Origt art, has: 3 figures
and I table.
Inatitut-khLmebaskoy fixiki AN SSSR'' Institute of
ASSOCIATIONi
Chemical Physics, AN SSSR)-
SUBMITTEDi 04M&r64 ENCLo 00 SUB CODEt GCJSS
NO REF SM 063 OTHER# 006 ATD PRZSSs 3W
Lord 3/3----

XRYLOV, O.V., kand.khimiCheeklkh nauk; FROLOVO V.M.
Chemical reactions on the surface of germanium. silicon, and their
electronic analogues. Zhur. VKHO 5 no. 5:535-543 160.
(MIRA 13:12)
(Germanium) (Silicon) (semiconductors) (Chemical reactions)
1;'VII-I -M

FROLOV, V.M.; KRYLOV, O.V.; ROGINSKIY, S.Z.
Catalytic propertieo of germani=. Probl, kin. i kat. 10:102-107
160. (MIRA 14:5)
1. Institut fizicheskoy khimii AN SSSR.
(Germani=)

FROLOV, V.M. (Leningrad)
Activity of the gastric glands in certain disorders of the higher
nervous activity. Pat.fiziol.i eksp.terap. 4 no.2:62-65 Mr-Ap
160. (MMA 14:5)
1. Iz kafedry nomallnoy fiziologii (nachal'n'ik - prof. I.T.Kurtaln)
Voyanno-meditainskoy ordena Lenina akademii Imeni S.M.Kirova.
(CONDITIONED RESPONSE) (GASTRIC JUICE)

AUTHORs 132-58-2-14/17
TITLEt The Repair of Drilling Tube Socket Joints (Restavratsiya
zamkov k burilInym trubam)
PERIODICALi Razvedka i Okhrana, fledr, 1958PVr 21 PP 56-57 (USSR)
ABSTRACT: A simple device for the repair of socket joints is described.
There is one figure.
ASSOCIATIONs Kiyevskoye Geolupravleniye (The Kiyev Geological Administration)
Card 1/1 1. Drilling tools-Maintenance

Catalytic propet
5
Aft
Kv 1.)V, S. Z. and-
e lite
l-f S114
e c4tAlyst wtu a ctry~[ e by
m,rt,r ~,ei~hmg
gripribit I& sinjj~ cryst..1 in all agIte I'
turd Itavirte art ti;rva of 6q cin
at a few min it mt~, the
app, sit 2001-14W. wid t1tv watrr furtned w., ~(11!d III it
trap CCUAL11 with liquid :43. 111C pics'llre ~11 I p"I t"
-W if lit
Ol tile original valuc in the Cjum! A U ft I at
und during a few ~c- at 3001, whw1k tvxi, how,ver, at.
tributed to a selective wi,_i,;rption cif 0. oil Gv CO + 0,
trilict. toPhaved similarly. I'lehydration stud, of Mtoll
and CULCHOUCIft rhowL-1 that thc NIC011 detlyth-ation.
Wgaq at it temp. 11,0' IfAer flun wiElmut Gc, whetca3 the
iso-PtOll wus dehydrated at a uie.Lsurable vcl(~.:ity as lo- 'v
as 170'. GC CAt3lYtjC LLCEiVity was d,;trov~d it (~w
tuh). coa(act with 01, tout rtstoreLl be all vv."cil.ittimat im"ll
m 13Y 11villifig it; III, CmI.;ikTI;)g 111~ 1.111 G: qlr~
Lscc. its activity tv4s I1c,.mwd Iligh.
7.1A

5 ,( 3 )
AUTHORS: IM.
Jx.-J
Kryluv, 0. V., SO11120-126-1 -29/62
um
x
_
,_
,
,_
Rooinakiy, S. Z., Corresponding Alem~-,er,
AS USSR
TITLE: Cataly'lle Dehydrc,ienation of Ethanol --_-.n -,'ermmanium
(Katalitt~~'c%ie otam.,la -1a germanii)

PERIODICAL: Dok-1--dy Akado,_,ii n.,,v,K SSSR, 19~111, Vol 1126, Nr 1, pi, iC-- - 110

ABSTRACT: Germanium !F3 ubli-i '.,) catalyze aoveral redc_x reactizt-in- (Refs
1,2). -'in at;1hore wa---ited t-, fnvesti,-ate -,he lzin-~'.icn of 3one of
the3e react.-Jorn J.-a the caa-:~ of vario-as Ge-sanplee with differ-
ent con-1-uitivity In th~:! case of a (,hariga of the
curron't with4i) P. wide ~-,tr~Ge. This can facilltate the
m-nderstanAing of th& mechanism of +he seLliconductor catalysis.
The kinatiz~a'of the reaction ir, the title ;v~lu inveot-
igated ande-, utatic vmm,.im ~~on,.Iitj'.ons i- a ri~actor- POW-
der with a upecif--c oi.rfaca of 0.0~) -- 0.1 r- 21E; ol~talned by ,U'I-
verization. in the mo~`,-ar !?, air s,?rrod 1',-v this Ths-,
0 , t ~50 0
Go-powdor was trained before tho exrerimont at 050 Dr a~
'lard 1/4

Catalytic Dehydrogenation of Ethanol on Germanium SOV/20-126-1-29/62
and at 10-5 - 10- 6 torr. The menticned dehydrogenation was in-
0. -s
vestigated at 200-270 A reduction of the reaction rate (Fi,
1:1-4 cursive) took place in the case r-)f subsequently carried
out ethanol compositions on Ge, trained at 8500. This was stop.-
pod after the fourth exporimont. Beside hydroj~en and acetal-
dehyde also ethylene was found to exist in the gas phase. Its
content was reduced from experiment tc axperiment. The hydrogen
pressure was in all experinents equal to the summed pressure
of acetaldehyde and ethylene (accuracy 2-310)). The authors as-
sume that the fresh Ge-surface adsorbs an oxygen molecule from
ethanol (reaction I) flanks to its &rcat affinity to oxy:-en.
The coverin(, of the Go-surface with adcorbed oxy-en 1Qtd3 tC,
U
the breahinE;-off cf t'Lie rea~;tirn (I). As late as fror, th,~ fo-,=th
experiment on only the proce3s of tLe catualytic d,3hydroG-~nat-Loru
takes 15lacc on the Ga-rowrder. The chemosorption of o..cyL;,3:! was
carricd ~~ut after the fourth cxperir;iont -in k:~rder tc) cla-ify the
effect of a coimplctG cover-'a.- of the Ge-3urface with oxy,-.en.
The curves 5-0 (FiF, 1) tc, sAnsejuently carzri,~,l out
experiments. They dascrlbe the 1:-'retica of tho hydrc.,~;,,n 30,ara-
Card 2/4 tion under the 6iven conditicns. Since tlc prcss-ure .-,f the,
11..-4 A,~_
o ~4 aND -Mf5~ M~2;
J~
tg-
-H

Catalytic Dehydrogenation of Ethanol cn Garma7l--i~jm S07/20-1 26-1. -29162
acetaldehyde formed un the ox!dlzu~l u-,trfuctj carpass-av C~MSA19r-
ably the h~rdroger pre,-is,ire the removal of the idaorb(A Oxyl;t1n,
according to th!~ r.3acticn (III) ia to be asLumed. The catalyti,~,
roaction (II) procca,!u V,.nn -~n tho sin-faco free fro.,, Uxy~-or.
U
Thus, adsorbed oxy(;ei ran in th,~ i-ase vf ',he 3yste.T. jornmanium-
-ethanol approach to Vie stat.1--nary a,.tivity cf th~ -."atalytic
dehydrogenatior from the aide of the surface free fr.3m o-cyaen
as well as frcm the side of the aurfaQe ,:=pletely ccicred by
the adsorbed cxy-en. FiCu:-a 1 shows tile elertronio character-
istios of the alloyed Go-samples, the loLarithm of th3 pre-ex--
ponential multiplier (1.- 0) and of the seeming activation enerCy
(E) of the catalytir. ~thanul duhyd:~-cZ;en-"ti4(-,n. The results des-
cribed clarify t(:- a cr.-rtain oxtent thc, often discussed problem
of the catalytic aquivalence of the p- and r.-somicondu,~tors.
The authors aseume wit'i a certair. s2curity with respe-.t to 'he
reaction mentioned in the title that the activation enerGies rn
the p-gemanium ar,~ ~--jnsiderably lower than on n-germanium.
This conclusion do2s, however, not hold in the .ase Gf all other
roactions (Refs 6,7). The rant,,c- of the Investigated systems is
0
Card 3/4 to be widened and th~.- catalytic processes are to be more tho-

Catalytic Dehydrogenation of Ethanol on Germanium SOV/20-126-1-29/62
roughly investigated. Data concerning the change of the elec-
tronic characteristics of the surface during the reaction pro-
cess are to be used. There are 3 fit,-ures, I table, and 7 ref-
erences, 4 of which are Soviet.
ASSOCIATION: Institut fizicheskoy khimii Akademii nauk SSSR (Institute of
Physical Chemistry of the Academy of Sciences,USSR)
SUBMITTED: January 28, 1959
Card 4/4
Eno
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130
35 .1
I-
14 33 Zia

V'2" C'
MCONA KEDICA Sec.2 Vol.10/2 Physiology,etc Feb57
8.22. FROLOV V. M. Pept. f Norm. Physiol., Milit. Nled. Acad., Leningrad.
*Change-o-r-gastric secretion in the dog during formation
of conditioned reflexes (Russian text) FIZIOL.Z. 1956, 42/7
(546-552) Tablet; 4
The latent period of gastric secretion after feeding with 200 g. meat. 600 Mi.
milk or 200 g. bread Increases during formation of conditioned reflexes (con-
ditioned stimulus metronome beat; unconditioned stimulus acid Ingestion), and
decreases during formation of differential inhibition In the majority of experi-
ments. Changes of the volume of gastric secretion, collected for 6 hr.. occurred
in all 4 dogs during formation and inhibition of conditioned reflexes but were not.
uniform. The individual differences are explained on the different individual type
of the nervous system. Simonson - Minneapolis. Minn.

USSR
OP-t%OrY :Human and Animal Physiology, The Nervous System
Abs. Jour. Ref Zhur Blol, No. 2 1959, No. 8510

-,V. ~.~ry -t'ic a). Ac a('----,r\
-Functional Dititurbances in the Gastric Glands
of Dogs Following a Shock to the Nervous Process-
es of the Cerebral Cortex Resulting from CollisJca
Ori5 Pub. :Tr. Vbyen..-med. akad., 1957, 74, 93-100
Vin, disturbances in the functional state i
of the coirtex wore paralleled by disturbances
in the compound-reflex and neurochemical phases
of gastric secretion, which varied with the
type of central nervous system In the animals
and the form of the disturbance in higher ner-
vous activity (in disturbances in excitation,
anacidity ensued; when inhibition was disturbed
there was an increase in secretion). With the
recovery of higher nervous activity, gastric
secretion was also restored, more rapidly and
completely in dogs of the strong, balanced type,
CO.rrl: 1/2

PHASE I BOOK EXPLOITATION 349
trolov,' Vladimir Moiseyevich
,Primneniye metoda korrektiruyushchey funktaii v rasebetakh deformatsly konsollnykh
plastin (Applic&tion of the Corrective-functim liathod to Calculation of the
Deformation of Cantilever Plates) Moscow, Oboroagiz, 1957. 34 p.
Sponsoring Agency: Teentrallnyy aero-gidrodinamichookiy institut, im. prof.
N. Ye. Zhukovskogo, Trudy, TYP- 705.Number of copies printed not given.
Ed.: Grigorlyev, Yu. P., Candidate of TLechnical Sciences: Chief Editor: Intynin,
Ye. V., Engineer; Ed. of Riblishing House: Sheynfayn, L. L; Tech. Ed.:
Pkikhlikova, N. A.
PURPOSE: This monograph Is Intended for engineers concerned vith stress analysis
of wings with low appect ratio and of turbine blades, and for scientific
workers specializing in the applied' theory of elasticity and structural
Mechanics.
Card 1/4

Application of the Corrective-function (Cont.) 349
CbVERAdE: A method in described for calculating deflections and stresses in
rectangular and triangular ctintilever plates, on the assumption that the
transverse cross sections of the plates parallel to the fixed end are
distorted under loading. The calculation method described permits the
values of the deflettion functions and of the functions of several stress
components to be determined -more exactly than is posdible by the bean theory.
The results obtained by the proposed method of calculation are compared with
the-results of calculations of other authors and with experimental data.
In the case of transverse bending of a rectangular plate the magnitudes of
the deformations of the cross secticas and the law of their variation along
the length depend on the relative length of the plate. When the loading is
uniform and the root section Is fixed along its antirejleng-th, these de-
formations are negligibly amll cor4ared to the overall deflections of the
plate. For triangular plates the deformations of the'eross sections have
on3,v a local effect. For a plate vith an entirely fixed root section the
cross section deformations are small compared to the basic magnitudes of
deflections, both in constant loading and in the case of a concentrated
force applied at the tip'. In the case of skeved attachment, the strength-
of-materials formulae for a vedge-shaped beam are unsuitable for determining
the deflections of a triangular plate. In all the examples considered, the
magnitudes of deflections coincide vel.1 with experimental values. The curves
obtained by analysis for the bending stresses for rectangular plates of
Y ious lengths shoved that near the fixed end there exists a certain redis-
Card 2/4

Application of the Corrective-function (Coat.) 349
tribution of stresses caused by the end fixity and not essential for overall
strength. Fortsil for calculating banding stresses along the cross sections
of a triangular plate are given. In triangular skeved plates, an obrupt stress
redistribution takes place near the fixed end. For instance, in certain skev-
fastened plates, for elastic deformations, the increase of stresses at the fixed
and may exceed by 2 - 5 times the mean stress at the trailing edge obtained
according to the strength-of-materials theory. The character of the stress
distribution and the magnitude of the stresses obtained by calculation agree
vith the experimental data. The author mentions particularly S. 1. Galkin and
L. M. Krushin as having obtained solutions for certain problems in transverse
bending of rectangular plates by methods other than those described in this
monograph. The monograph contains 9 tables and 32 figuxes. There are 4
bibliographic references, 2 'Boviet and 2 in English.
Card 3/4

Application of the Corrective-function (Cont.) 349
TABIZ OF
CONTEN
Introduction 3
1. More Precise Analysis of the Deformations of a Rectangular
Cantilever Plate 4
2. Determination of the Stresses in a Rectangular Plate 15
3- Analysis of the Deformations of a Triangular Cantilever Plate 20
4. Determination of the Stresses in a Triangu-1ar Plate 29
Conclusions 34
References 35
AVAILABLE: Library of Congress IS/eag
Card 4/4 6-30-58

ACC NRt AP7001450 0OU11CE CODE: Uil/0413/66/000/021/0186/018-5
INVE111TORS: Zolkin, A. V.; Nakhimovich, L Yo.; Frolov, V. M.; Krugov) V. S
ORG: none
TITLE: A shock-absorbing device. Class 47, No. 188225 fannounced by Central Scien-
tific Research, Design, and Construction Institute of Itachanization and Power Engi-
neering of the Foroot Industry (Tsentrallnyy nauclino-isaledovateliskiy 1 proyaktno-
konstruktorskiy institut moldianizataii i onorgotiki leonoy pronyshlonnozti
SOURCE: Izobreteniya, pronyshlennyyo obraztsy, tovarnyyo znnki, no. 21, 1966, 186
TOPIC TAGS: shock absorber,, hydraulic device, hydraulic equipment
ABSTRACT: This Author Certificate presents a shock absorbing dovice consisting of
a two-stage hydraulic cylinder with a shock absorbing chamber and an axial throttle.
The throttling chamber of the latter is connected with the second stage of the
hydraulic cylinder (see Fig. 1). To chafige' automatically the hydraulic resistance
in respect to the dynamic load on the shock absorber, the shock absorbing chamber
is connected to the roro-valvo chamber of the throttle. The throttle valve is sprin
loaded with a calibrated spring.
Card -1/2
UDCs 621-752.2

ACC N& AP7001450
Fig. 1. 1 - shook absorbing chamber;
2 - throttle chambori 3 - throttle;
4 - spring
Orig. art. has: 1 figure.
SUB CODE: 131 SUBH DATE: IOAug65
2/2

PHASE I BOOK DaWITATION SOV/6591
Frolovj,. Vladimi MioiaeyPFi;h
Primeneniye metoda, korrektirUyUqhCh9V fUnktaii v raschetakh deformat4y_,
konsolInykh plastin_ (Appl#!ttion oi the Co*r,r~~iibn-t~nctioi.k~tho*d, in Strdin
Anadysis of Cantilever Pla:tes)'-k~'sc*o'w,',_"Obo"r-n-gi'zv-..~957- 34 P., (S;Asil
Moscow. Tsentraltnyy aero-gidrodinamichaskiy institut. Trudy,, to. 705)
Errata slip #serted. No. of copie a printed not g#q~i
Ed.t Yu. P. GrAgorlyev,. Candidate of Technical Sciences; Ed. of Plubiishing
Houses L. 1. Sheynfayn; Tech. Ed.s N. A. Pukhlikova; Managing Ed.t
Ye. V. Latynin, Engineero I . .. I --:- -
PURPOSE: The book is intended~ for engineers concsrnea-wiih***t'h'e- a't-re**n-g'-t'h-d-esign
of low-aspect-ratio wings and turbine blades and for scientific workers
specializing in applied elasticity theory and struotural.mechan.ice..
COVERAGEs A method of calculating deflection,, stress6s# and strain of..cantilever
rectangular and triAngular plates is presented; the design is basea 'on *the- - -*
assumption that the cross sections of plates parallel to the root cross sectioca
Card 3/3

Application of the Correction-Funotion (Coat.) SOV/6581
are distorted. This method gives more wmet values than the beam theory for
the function of deflections and of some stress components. The method con-
sists of modifyin4 the beam theory function by corrective functions-uhicb.are
determined by a variational method of successive approximation. Sample cal-
culations are given for designing rectangular and triangular constant-thickness
plates; the results obtained are compared with those received by other authors
and with empirical data. Applying the described method to plates of variable
thickness requires the integration of differential equations with more compli-
cated rariable coefficients. No personalities are mentioned. There are 4
referencess 2 Scriiet and 2 English.
TABLE OF CONTENTSt
Introduction
Ch. 1. Fiore Exact Strain Analysis of a Cantilever Rectangular Plate
Ch. 2. Stress Determination in a Rectangular Plate
Caid 2,13
3
4
15

Application of the Correotion-Funetion (Cont-) SOV/6581
Ch. 3. Stra in Analysis of a Cantilever Triangular Plate 20
Ch. 4. Stress Determination in a Triangular Plate 29
Conclusions .34
References 35
AVAILABLEt Library of Congress GF,/VK/zp/ee
SUBJECT: Mechanical Engineering .3-12-64
Card 313

Pc_4/Pz,_VPs-4
14A124
)D VJ-
'ACCESSION MR: APSoo6779 G/0195/65!006/001/0147iio-i64--i
;AUMRs rVol", V. M.
'30
TITLEi Catalytic deconVosition Of hydrazine on ormanium
ISOURCE: Kinetika I katalit's V. 6, no. 1, 1965, 149-164
.TOPIC TAGS: qMglytic activL4 decomp osition. germanium. kinetics
ABSTRAM The ~inetica of the decomposition of hydrazine on alloyed sampleL
,germanium of different types of conductivity was studied. The catalytic d6t,,~L_
Alon of hydratina on germanium powder occurs at a zero order with an activation
energy of 20-22 kcal/mol. The decomposition products are.ammonia and nitrogen.
The type of conductivity of germanium does not affect its catalytic propertiols.
which can be explained by an* of the following probable causes* 1) the high con-
------centratL*n-of- surface, -states -due-to. hydradne -adsorption. - 2) -the preso:-~,--t-of a---
4"
to- -4--k -and-Vie
or
"is h s.6 Orls. art. -has-:- _-_5 figures, 2 tables, 3 eq-ations.
Card 1/2

ACCESSION NR:- APS006779
------ - -----
ASSOCIATION% Institut khInicheskoy fizlkL AN SSSR (Institute of Physical Chenistryel
Academy of Sciences SSSR)
SUBK1rMD: 04Mar64 ENCL: 00 SUB CODE: GC
No REr SOY: 003 OTHCR% 007
Card 2/2

FRMOV V.M.
, n=xzj~~
Kinetica of catalytic dehydrogenation of alcohols on germanium.
Kin.i kat. 5 iao.6zlO76-2085 N-D 164. (MIRA 28v3)
1. Institut khimicheekoy fisiki AN SSSR.

FROLOV, V. M.
Cand Chem Sci - (diss) "Catalytic properties of germanium and
-their relationships with semiconductor properties." Moscow,
1961. 16 pp; (State Committee of the Council of Ministers
for Chemistry, Order of Labor Red Banner Scientific Research
Physical Chemistry Inst imeni L. Ya. Karpov); 150 copies; price
not given; (KL, 6-61 sup, 200)

IKONNIK(YVp SergeyAleksoyevich dots.) kand. teklm. nauk; KHAKOVSKIY, Ivan
Ivanovich,, prof .'#'dckbbr'tekhn. nauk; MALITSEV, Vasiliy Nikolayevich,
dots.) kand. tekbno nauk; CHACTWIANI, Igor' Konstantinoviobp dots.,
kand. tekbne nauk. Prinimal uohastiye RUSIN, V.N.; LAKWINp V.V,p
prof., doktor tekbh. nki~k., roteonzent;j~-QjDV,--Y"j dots., kand.
tekhn. nauk.. retsenzentj KHOZE, A.N.p kand. tekhr4 nauk, retsenzentj
KOTIN, A.F.t dots.,, kamd. tekbn. nauk,, retsenzent; HYASNIKGV,, N.V.J,
red.; SHLENVIKOVA, Z.V., rod. izd-vaj BODROVA,, V.A., teklme redo
[Power plants on shipel Sudovye silovye'ustanovki. By S.A.Ikon-11cov i
dr. Moskvap Izd-vo "Recbnoi transp*ort," 1961. 519 p. (MIR1 14: 1-1)
1. Sotrtfdnik1-konstrdktorskikh byaro Ministerstva rechnogo flota
(for Lakbanin, Frolov',-Khoie, Kotin).
(Marine engines)

SOV/124-58-1-771
Translation from: Referativnyy zhurnal, Mekhanika, 1958, Nr 1, p 98 (USSR)
AUTHOR: Fro:ov, V. M.
TITLE: -Me- ~Hat-transfer Coefficient in Surface Condensers for Ships
(Koeffitsiyent teploperedachi v sudovykh poverkhnostnykh
kondensatorakh)
PERIODICAL: Tr. Novosibir. in-ta inzh. vod. transp. , 1956, Nr 2, pp 167-181
ABSTRACT: The author offers a simple calculation formula which appears to
be the result of a revision of the general equation for the heat-transfer
coefficient from condensing steam to cooling water relative to the
particular operating conditions of ship condensers. The revision con-
sists of a number of simplifications, particularly the replacement of
certain difficult-to-determine quantities by mean numerical values.
All of the simplifications are substantiated by calculations and are
illustrated by graphs. The applicability of the formula is limited to
those specific --alues of the operational and design parameters which
corresponds to the operating conditions of piston-type steam power-
plants.
Card 1/1 A. A. Gukhman

W617
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5,11jo 1 9, 12 14 115 3 AOWAO29
AUTHORS: Krylov, O.V.j Candidate of Chemical Sciencesp jrojay'A,1,
TITLE: Chemical Reactions on the Surface of Germanium, Silicon and Their
Electronic Analogues
PERIODICALs Zhurnal Vsesoyuznogo Khimicheskogo Obshchestva im. D.I. Mende-
leyeva, 1960, No- 5, Vol- 5, PP- 535-543
TEXT: Although the chemical reactions, which take place on the surface of
semiconductors, are of great practical significance, these surface proper-
ties have not been investigated,as well as those of the bulk. The following
processes are included in chemical reactions taking place on the surface of
a solid bodyt 1) chemical adsorption (chemosorption), 2) catalysis, 3)
formations of now phases. The present article is dedicated to the -nalysis
of chemosorp-tion, formation of new phases connected with the aspects of
chemosorption, and to a lesser degree to the catalytic reactions. A discus-
sion is given on the electronic processes in chemosorption on semiconductors.
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
It is said that Soviet workB (Ref.6-9) have been published on this subject.
The main aspects in this connection are listed: 1) A free electron (or free
electron "hole") of the semiconductor lattice isIthe center of chemosorp-
tion. 2) Adsorption atoms and molecules are regarded as admixtures, destroy-
ing the strictly periodic structure of the lattice. 3) The adsorption abil-
ity and the catalytic activity of the semiconductor surface is determined
by the mutual distribution of the local level of the adsorption particle and
by the Fermi level (level of chemical potential) on the surface. 4) The po-
sition of the Fermi level on the semiconductor surface F_ depends on the po-
sition of the Fermi level in the volume e , and on the bend of the zones at
the surface, i.e., the difference of potelkliuls between the surface and vol-
umezAe_ viz., 9 - Eo+ AE- 5) The position of the volume Fermi level
(e_o) at low temperatures is determined by admixtures introduced into the
semiconductor. 6) The bend of the zones on the semiconductor surface (AE)
is determined by its charging during adsnrption and also by the non-adsorp-
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
tion surface states (Tamm levels, surface defects). Several conclusions are
drawn from these aspects, which were confirmed experimentallyl The depend-
enQe of the adsorption and catalytic ability on the electroconductivity 0-
and the work of the electron escape 9P of the semiconductor, and the reverse
phenomenon: a change in 45 and f in the adsorption process and that of cat-
alysis; the effect of admixtures introduced into the lattice of the eemi-
conductor, i.ee, so-called "modification" on the adsorption and catalysis,
the opposite effect of the donor and acceptor admixtures, the appearance of
kinetic anomalies in the adsorption and catalysis, etc. The authors refer
to the question of the connection between the surface properties of semi-
conductors and the electronic structure of the atoms which constitute the
surface, stating that this aspect has been only slightly investigated. Com-
ments are made of Dowden's theory (Ref.14) on this subject and that of
Goryunova (Ref. 13). It is stated that most authors, with regard to the pro-
cesses of chemosorption and catalysis, classify semiconductors according to
their ability to capture some admixtures (semiconductors of the n- and p-
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
type). Others consider the anomalous behavior with regard to the adsorption
and catalysis of semiconductors with transition metals in their composition.
It is pointed out that if the limiting stage of the surface chemical reac-
tion is the interaction of the adsorption molecule and the free elect-ron of
the semiconductor, semiconductors of the n-type will speed up this reaction
primarily, and then all the factors, which increase the concentration of the
free electrons in the semiconductor, will increase the rate of reaction
(Ref,15). The conclusion is drawn from data derived in Ref.15 that elec-
trons of the lattice participate in the limiting stage of the reaction.
Hauffe (Ref,16) thinks that this stage may be the desorption of hydrogens
H2(gas) --;_~M+ + 2e
ads. fast
D2(gas) 2D+ads.+ 2e
H+ + D+ + 2e )HD(gas) slow.
ads. ads.
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Chemical Reactions on the Surface of Germaniumt Silicon and Their Electronic
Analogues
The interest expressed by workers in recent years in the processes taking
place on the surface of elementary semiconductors not containing d-elsotrcne
is pointed out (Ref.17)- It is further stressed that more research has been
carried out on the subject of germanium, since it is widely used in semicen-
ductor electrical appliances. A brief historical review of the devalopment
of scientific interest in chemosorption on germanium is given mentioning the
early works of 1930 (Ref.18) on the reaction of germanium. nitride formation,
also Ref.19 on the decomposition of german (GeH4 with the formation of dis-
persed germanium. Chemists showed interest in clarifying the interconnec-
tion between the chemical surface properties of the semiconductor with its
electronic, volume and surface properties. Since Ge is covered with an oxLde
film in air, it is pointed out that prior to a chemosorption investigation
a thorough purification of the Ge surface must be initially undertaken. Sur-
face cleaning is based on combining the ionic bombardment With subsequent
heating in a vacuum of 10-10 mm Hg. Other methods ares crushing single
crystals in a vacuum (Ref.21), reduction with hydrogen (Ref.22,21), produc-
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A051 YA029
Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
tion of Ge films by evaporation in a vacuum (Ref.23), cathode atomizing
(Ref.24) and decomposition (Ref.25) of GeH 4. The compact single crystal
samples are considered to be the most appropriate for measuring electrical
properties, but difficulties arise due to the small surfaces. Ref.26 is one
of the first works on the investigation of the changes of the electrical pro-
perties as a result of contact of the eample with some gas at various pres-
sures over a certain period of time. It was established that the contact
potential of the surface can change reversibly between two extreme values
differing by about 0.5 v with a change in the gas medium. Experimental re-
sults proved the existence of a layer of a space charge on the semiconductor
surface determined by the surfaces states. The experimental results showed
that even the most thorough purification of the surface by available methods
does not lead to the disappearance of surface states. According to Handler
(Ref.27) the existence of surface states is determined by unsaturated bonds
of the surface atoms of Ge. Fig.2 shows the surface distribution of the Ge
Card 6/18
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
atoms for a crystallographic plane (III). The surface Ge atom becomes in
the electrical respect similar to the atom with 5 electrons in the outer
shell. The surface Ge atoms fulfill the role of acceptor levels. Any dis-
crepanoies in the results of the evaluation of the density of the surface
states for the processed Ge surface by different methods is explained by the
different densities of the unsaturated chemical bonds of the surface. An
investigation of the electrical properties of the Ge surface, processed with
a CP-4, (SR-4) scouring agent, showed the presence of a more complex struc-
ture of the surface states as compared to pure surfaces (Ref-30). Several
works were published on the acceptor nature of the first layer of adsorbed
oxygen (Ref-27,32,33). Ref-33 agowed that the contact of a pure Ge surface
with oxygen at a pressure of 10- mm. Hg causes an increase in the work per-
formed by the escaping electron by 0.2 ev, whereby the equilibrium value of
the work is reached within a few minutes. A study of the adsorption on
single crystalline samples proved the electron-graphical methods using slow
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
electrons to be very promising (Ref.20). The authors of this work obtained
a relationship for the connection of the intensity of the beam with a coat-
ing: I/Io = (1 - &)2 (2), where I and 10 are the intensities of the beam
for the partially covered and pure surfaces, respectively, () is the specif-
ic filling. If the kinetics of the adsorption is described by the expres-
sion: 0 - 1 - e-(SPt (3), where OL is the number of impacts of the gas
molecules on the surface per second at 1 mm Hg relative to one surface atom
of Ge, 3 the probability of adsorption in the impact of the gas molecule
against the pure surface, p the pressure and t the time. Combining this ex-
pression with the previous one, the authors could trace the kinetic adsorp-
tion according to the change in the intensity of the electronic beam with
time. These data correspond to the postulation of the constant activation
energy and to the rate of adsorption being proportional to the products of
the adhesion coefficient and Dart of the uncovered surface. Further refer-
ence is made to the work of Green (Ref.28), where equation 3 is used for the
description of the chemosorption kinetics of oxygen on germanium. A mano-
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
metric study was made of the chemosorption kinetics of oxygen on Ge powder
obtained by crushing in a high vacuum (Ref.21). Green's publication (Ref. 28)
a8sumes that the slow adeorption of oxygen described by the Rogin3kiy-Ze!9-
dovich equationt dN/dt - ae-bN (6), where N is the amount of oxygen -i-
sorbed at the time moment t, a and b are constants for the given temperature
and pressure,begine with the filling. It is stated that on the basis of the
kinetics of the slow adsorption of oxygen by Ge, it is difficult to form a
conclusion of the exact mechanism of this process, since various types of
mechanisms of interaction between a solid body and a gas may lead to the law
of logarithms. In studying the kinetics of the chemosorption of oxygen on
single crystal plates of Ge by the weight method data were obtained which
coincided with Green's results (Ref-35). It was found that the drop in the
adsorption heat of the oxygen with filling according to Green was determined
by repulsion forces between the adsorbed atoms. Other investigations under-
taken are listed as followas The adsorption of N2, H21 CO and C021 at -196,
-78 and 250C on single crystal Ge rods by the spark method; the high tem-
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Chemical ReacLions on the Surface of Germanium, Silicon and Their Electronic
Analogues
perature oxydation of Ge, the chemosorption of hydrogen on Ge at high tempe-
ratures; the chemosorption of ammonia at 2780C on a Ge film; the adsorption
of H21 CO and 02 on Ge powders; the adsorption of a number of gases in the
crushing of single crystal Ge of the n-type results of the latter are given
in Table 1 (Refs.38,39,40,41,42,43,22,44). In all cases where adsorption
was observed, it took place uickly before filling close to the monolayer.
The cause of gas adsorp Zexcept of pyridine and dioxane) is assumed to
be the electrostatic interaction between the dipoles of the molecules of the
adsorbate and the Ge surface. The authors exclude the possibility of val-
ency bond formation in the adsorption of the investigated gases on Ge. since
the latter calls for the dissociation of the gas molecules which invariably
leads to 6 < 1. An analysis is given of the chemosorption on silicon and
other electronic analogues of Ge. An investigation was made of the 02 chem-
osorption on thread-like single crystal samples of silicon by the spark
method (Ref. 46,-48). Recently in semiconductor electronics semiconductors
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
have been. applied in addition to Ge and Si, which also did not contain d-
electrons and were formed by elements equidistant from the fourth groups
AIIIBV, AIIBVI. The processes of gas etching of this type of semiconductor
were investigated (Ref-52). Sjyov (Ref.54) studied the electrical proper-
ties of the surface of the Ail B compounds. By measuring the effect of the
field in samples of single crystals AlSb, InSb and GaSb of the n-type, it
was shown that inversion layers are formed on the surface of these semicon-
ductors connected with the presence of surface acceptors (Fig.1). Certain
facts, such as the high value of the field effect on the AlSb in a vacuum as
compared to air, indicate a high influence of the adsorption on the elec-
trical properties of semiconductors of this type. No definite answer has as
yet been obtained on the difference in the chemosorption properties of n- ly
and p-semiconductors. It was shown (Ref.55,56) that additions of LT and
Ga203 to ZnO hardly affect the rate and energy of activation of the 2 chem-
osorption. Similar results
for
catalytic
activity of the
were obtained
the
latter in the dehydration of C 4H8. Reference is also made to the works of
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Chemical Reactions on the Surface of Germanium, Silicon and Their Electronic
Analogues
Chizhikova (Ref, 57), Kutseva (Ref-58), on the study of the chemosorption of
CO and 02 on ZnO and NiO. Several examples are listed when the limiting
stage of tho chemosorption in catalysis is not the electronic interaction of
the adsorbed molecule with the semiconductor. Some authors assume that the
limiting stage is the movement of the active centers - structural defects -
from the volume to the ZnO surface. Finally, the author discusses the cat-
alytic reactions of the Ge surface and that of its analogues. The catalyt-
ic properties of Ge are mentioned quoting Refs.25, 59. Conclusions were
formed that the rate of reaction of the auto-catalytic decomposition of GeH 4
on a Ge film is controlled either by the dissociation of adsorbed radicals
of GeHx (x - 2 or 3) or by the desorption of oxygen when the surface is com-
pletely covered by the GeHx radicals and hydrogen. The kinetics of the re-
action H2 - D2 exchange on Ge powders obtained by crushing of single crys-
tals in air with subsequent reduction by hydrogen were studied (Ref.60,61).
The ortho-para conversion of hydrogen and H2 - D2 exchange on Ge films pro-
duced by the cathode atomization in an interval of 77 1750C was investi-
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Chemical Reactionson the Surface of Germanium, Silicon and Their Electronic
Analogues
gated (Ref.24). A comparison of the rates of these two reactions led the
authors to the conclusion that the first one is of a magnetic or chemical
nature. The authors of this article and Roginskiy investigated the oatalyt-
ic properties of Ge on an example of dehydration of alcohols# cyclohexaneg
decomposition of hydrazine reactions on powders and films. The results
showed that Ge is an active catalyst in the respective reactions. A study
was also made of the kinetics of the catalytic reactions on n- and p- Ge
with various admixture contents (Bb or Ga). Fig-3 shows the relationship of
the apparent activation energy of dehydration of C2H OH to the concentration
of the main charge carriers. From Ref8.65, 66 regarKng the hydration reac-
tion of ethylene and formic acid decomposition, it was also found that the
hole samples were more active in the catalytic sense and were characterized
by a lower activation energy than the electronic ones. A study was made of
the decomposition of HCOOH on AlSb and InSb. The hole sample had a lower
activation energy than the electronic ones. Fig-4 shows the relationship of
the catalytic aztivity at 20000 relative to a unit of surface for the decom-
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Chemical Reactionson the Surface of Germanium, Silicon and Their Electronic
Analogues
position of C H Off to the width of the forbidden zone. Data obtained from
~,7
chemical reac one on the surface of Ge and its electronic analogues point
to the faulty deductions presented in Refs.14, 16, maintaining the all-im-
portant role of transition elements in chemosorption and catalysis. There
are 3 tables, 2 diagrams, 2 figures and 73 references; 24 are Soviet, 42 are
English, 7 are German.
Card 14/18

FRO ~ - - I , '- -, * -
Rvalunting creiuseu)n- ahenomens on Venue for three-Ir.,- structure
of model atmosphere. Uch.zap.WU no.190:62-73 '57. (.rRA 10:?)
(Venus (Planet))

VINOKUROVp D.Ya.; SHIROTSKIY9 LP ; FROL-OYJL-U.; KOGAN, A.S.v opets.
red.; KAMENSKAYA, Ye.A.; fia-.; POLUYEKHINA, N.I., tekhn.r.ed.
(Brief manual for the ship repair worker]Kratkoe posobie dlia
raboahago-sudoremontnika. Moskva,, Rybnoe khoz., 1962. 121 p.
WRA 16:4)
(Ships-Maintenance and repair)

9.-'.26G, 9.11310 77 9-~'-8
SO'1/109-5-3-12/26
AUTHORS: Kontorovich, M. I., Pelllkan, S. G.,
TITLE: Investigation of a Transistorized LC Oscillator
PERIODICAL: Radiotelchnika i clektronixa, Vol 5, Nr 3, pp 439-11119
(USSR)
ABSTRACT: Fox, lilves tiga t ions of' transistor self-oscillators,
I
the triode is sometimes substituted by an equivalent
ocheme with constant parameters, buttiis is possible
only for small oscillationu; hence,the investigation
of the most Important aspects of transistor oscillators
is excluded. Another group of' scientists appl 'led tile
approach used for tube o.3clllators, tjius, considering
tile transistor oscillators as a nearly conservative
System, which is also possible only for limited con-
ditions, because the voltage changes of the transistor
oscillator must be clo-se to oinusoidal. The present
paper investigates tile oscillator, operating with
nonsinusoldal oscillations and with certain limitations.
Card 1/ 23 Notwithstanding a certain idealization, it is possible

Investigation of' a Transistorized LC 77958
Oscillator SOV/109-5-3-12/26
to detemine the frequency of self -oscillations, the voltage
and magnitude of the Indticed currents. All these investiga-
tions were made for plane triodes, under operating con-
ditIono where it is possible to ignore the Inertia of
the transistor. The experimental data agree very closely
with the theoretical calculations. 2. Setting of'
the Problem and.Baoic Relations. Figure I showj a
self-oscillator with a plane transistor (triode). For
this scheme, the oscillator equation can-be written as
f 01 lows:
e
Ir it
r._ 01it -i LiJ + ij.R
de,
C fit
Fig. 1. Schematics of the
oscillator: (b) base; (k) cathode;
Card 2/23 (c) capacitance.

illvc~;tlGatlon ot' a Tvanulutorizf2d D"
110 12/2 G
Oscillator S
To theje equation.; the followintr i,elatlun., 'L~Jvlnj., I-h(2
charactevistlc~7, of thc triode havo to, I)c :.tdacd,
itz iv (1,19,
ib ifi (I'll -
For practical application, the most importanit ca.,3(-, L;
when I