SCIENTIFIC ABSTRACT GORYUNOVA, N.A. - GORYUNOVA, N.A.

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• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

137-58-4-6978
Vitreous Semiconductors
for this series of systems was found, and it was also found that the boundary
substances may be obtained both in the crystalline and in the amorphous state.
The (5- of the compounds 17in8 within the limits of glass formation had a mag-
nitude attaining 10-3 mholcm. It was found that the new vitreous substances
are typical semiconductors, and 07 may change by several orders of magni-
tude in the case of the boundary substances on transition from the vitreous to
the crystalline state. Glasses do not have absorption bands in the 2-14 mm
interval. By their chemical composition, these glasses may be designated as
chalcogenic. The semiconductors investigated were distinguished by a low
softening temperature (from 100-3000) and high brittleness. Structural in-
vestigation of the substances beyond the limits of the vitreous state show that
some of them, when in the "crystalline" state, consisted of 2-phase systems
of crystal and glass. In a study of the T125e [ xSb?Se3(1-x)AsSe3 ] 5y5tem,
in which As replaced antimony, a second vitreous phase was found in the
TlSbSe2 compound. Thermal analysis of the 2-phase substance showed that
the chemical compound dissolves into the vitreous component of the melt at a
temperature above the liquidus. The reaction of the components in this sys-
tem is describedby the equation: x (TlZSe-AsZSe3) vitreous phase- (,l-x)(TI?
Se* Sb2S ) crystalline phase. The following systems were also invesiigated:
xAs2Se I-x)Sb2Se3 and xTlZSe(I-x)As2Se3 with isomorphic substitution of
Card Z

1.37-58-4-6978
Vitreous Semiconductors
Sb and As. The phase composition of the former was x [ 1/6(St)zSe3)' 5/6
(As;!Se3) vitreous phase - (I-x)Sb2Se3 crystalline phasel The phase composi-
tion of the latter was x(T I 25e- AsZSe3+T 1) vitreous phase - ( I -x) TISe crystal-
line phase.
1. Semiconductors (Vitreous)--Structural analysis
--Thermal analysis
N.Sh.
2. Semiconductol-s (Vitreolls)
Card 3/3

I~S- 0 o. b ~ A I V) - ft-,
AUTHOR GORYUNOVA,N.A. P1 - 2356
TITLEi -Fo-m-e-Frattemg-of Crystal Chemistry of Compounds with the
Structure of Zinc Blende. (Nikotoryye voprosy kristallikhimii
soyedineniy so strukturoy tainkovoy obmanki, Russi&.n).
PERIODICALt Izvestiia Akad. Nauk BSSRj Ser. Fiz., 19579 Vol 21, Nr 1,
pp 120 - 132 (U.S.S.R.)
Received: 4 / 1957 Reviewedt 5 / 1957.
ABSTRLM As a basis for this search for new semiconductors, the
authoress chose compounds with the structure of zinc blende
and the elements of the IVb - subgroup of the periodic system.
The present work contains some qualitative deliberations which
are based upon the position of the elements forming the connections
in the periodic system. These deliberations served as a working
hypothesis for sorting out the group of semiconductors according
to a crystalline-chemical distinguishing mark.
The arouD of binary compounds with the structure of the zinc blende
and the elements of th_eNb-subgroup. The far-reaching qualitative
agreement of the properties of these substances-is based. upon their
chrystalline-chemical similarity. In both cases a tetrahedronic
arrangement of the atoms'and tetrahedrically directioned covalent
bindings exist. The group of these binary compositions is, lastly,
shown in form of.a table. Several semiconductors belonging to
Card 1/2 this group are enumerated.

PA - 2356
Some Problems of Chrystal Chemistry of Compounds with the
Structure of Zinc Blende.
The modification of the ty2e of the binding in the 2reviously
mentioned groupt This group not only poSsesses structural but
also crystalline-chemical similarities. '2he reason for these
similarities is the modification of the type of the bindings
corresponding to the position of the elements in the periodical
system in accordance with certain laws. Several modifications
of these laws are enumerated individually.
The isomorphism of the compounds with the structure of the zinc
blende: Such substances are of great interest for the investigation
of the modification of electric properties in the case of a
modification of the relations between the different types of
bindings which permit isomeric substitution within wide limits.
In conclusion the position of the group of compounds in con-
Card 2/2 sideration of the structure of the zinc blende within the other
anorganic compositions is discussed.
ASSOCILTIONt Leningrad Physical-Technical Institute of the Academy of Science
PRESEETED BYr of the U.S.S.R.
SUBMITTED:
AVAILABLEt Library of Congress.

!UTHORi ORMONT,B.F., GORYUNOVA,N.A., AGEYEVA,I.N., PA - 2357
FEDOROVA, N. N *----
TITLEt On the Theory of Phases with Varible Composition with the
Structure of Zinc-Blende. (On the investigation of t'4e ossible
domain of the homogeneity of compounds of the type A.L B1
(K teorii fas peremennogo vostava sostrukturoy tainkovoy
obmanki (0b iseledovenii vosmozhnoy oblasti gomogennosti
avedineniy tipa ARB:; Russian).
PERIODICALs Izvestiia Akad. Nauk SSSR, Ser. Piz., 1957, Vol 21, Nr J? PP 133 -
140 (U.S.S.R.)
Receivedt 4 / 1957 Reviewed: 5 / 1957
ABSTRACTt The present paper gives a survey of investigations bearing on the
matter: Most of the substances crystallizing with the straoture of
rock-salt (oxides, nitrides, carbide@, and others) are phases
with variable composition. Even in the case of very narrov homo-
geneity domains of a phase, its physical-properties somet-Imes
Phange considerably within the hoiogeneity domain. This applies
especially in the case of electric properties. Substances with the
structure of zinc-blende do not represent a special type of atruc-
ture, they have a tetrahedral configuration of the coordination
sphere. Substances with the structure of wurzite have-the same
configuration. In the came of compounds of the type ALBE the
Card 1/2 following applies: With increasing polarization first the struc-
T!

A - 2357
On the Theory of Phases with Varible Composition with the Structure
of Zinc-Blende.
ture of N&ClI then the structures of wurzite, and finally that of
zinc-blende appearo The methods of synthesis of the compounds
GaALs, Inks, and InSb.are then discussed.
Next, a synthesis-of the compounds of the type A:a BI developed by
the Physical-Teohnioal Institute is described; here rather high
temperatures are necessary. For the determination of the breadth
of the homogeneity domain it is necessary to carry out precise
x-ray analyes and chemical phase-analyses. (3 tables).
ASSOCUTIONt Physical-Chemical Institute L.Ya.KARPOV. Leningrad Phy2ical-Techni-
cal Institute of the koadamy of Science of the U.S.S.R,
PRESENTED BY#
SUBMITTEDt
kVAIL&BLEt Library of Congress.
Card 2/2

ar,,l th-,~ Qtnry ci m~va~~,,;~
Utely (q

AiTHO-HS Bcvq.1ic1ttz~vskij, A. S. ,~
O rj " r
1V aA., .57-27-7-2/40
-
-
Takhtareva, 11. K.
TITLE: An Invuoti,~~Ilatio,,, of Vie Microh-irdness ul' Some Oe;.-icoilductors
'
osti neko-
With a Zinc Mende -Structure (Isjledovan-ij,.~, raikro~verd
torykh Polaprovounikov so strukturoy tsinkovoj obiaanki).
PERIODICAL: Zhurnal Takiiiiichuskoy Fiziki, 1957, Vi~~I. 27, Nr 7, 1..08-1,113
(USSR)
ABSTRACT: The microhurunesa of semicunductora cotaprioed in a oryot.illo-
chc;,,jical group aocorcing to the drinciple of a coix~on t,~.i,e of
linkage and a comrian structurc was invu.Ait',Lted, the obtained data
were compared with the other physico-chem.eal and the
correlation with the electric parameters of L'iu qc:-,icon6uctors
of this group was determined.' Dje data of the first L(,,:3ts -,;ith
some seeiiconductors with Vlartzit-, zinabliznde- and diumond-strac-
ture are given liere. The uticrohardness-valu,.-s of t;,eoc sa.;Uicon-
djetor3 were deterfained. When gallium arseiiiae ccrystalliz~-d
in a narrovi tube it s'.,.owed a hermaphroditic (ty;in-cr.j,:ta-,) forl~a-
tion an& the microhardness increased. But also uncic-r conservat-
ion of tie same crjstallization-conditions the -reatest variations
were found to occur in t'-I* b the
is Collipound y
ness. The authorn could not yet determine the r,~aslori.,3 for t1jij,
A cLrtain dependence of the 6licrohardness on the )urit
; of the
~Iard 1/2 .
appliod eaterials was observed in the telluridez (Ga2Te3), In2Te3,

An Investigution of the Microhardness of Some Seriiconductor3 'Nith a 57-27~7-2/40
Zinc IMMde Structure.
ZnTe). It is shown that the microhardness becomes smaller in tfie
inoelectrori-comlsound -aeries with strenetheniag. uf L~IL- i(;~11-bound,
which corresponds to the character of variation of tllu hardness
according to V. M. Golldshmidt, UF11, 9(6), all, 1929,. There
are .; fig-Ares, 2 tables and 5 refere=es.,' 4 of which are Soviet.
ASSOCIATIUN: 111iisico-Technical Institute AS USSR, Leningrad. (Fiziko-tel:hni-
che3kiy in-ititat AN SSSR, Ltrjingrad)
SUB14ITT ED March 11, 1957
MILABLE: Librarj of Congress
0
1. Semiconductors-Hardnese-Determination 2. Zinc blende-Applications
Card 2/2

SOV/ 137-58-10-20833 D
Translation 1rom: Referativnyyzhurnal, Metallurgiya, 1958, Nr 10, p69 (USSR)
AUTHOR: Goryunova, N.A.
TITLE- An Investigation Into Semiconductor Chemistry (Itisledovaniya
v oblasti khimii poluprovodnikov)
ABSTRACT: Bibliographic entry on the author's dissertatio.ii for the de-
gree of Doctor of Chemical Sciences, presented to the In-t
obshch. i neorgan. khimii AN SSSR (Institute of General and
Inorganic Chemistry, Academy of Sciences, USSR), Leningrad,
1958
ASSOCIATION: In-t obshch. i neorgan. khimii AN SSSR (Institute of General
and Inorganic Chemistry, Academy of Sciences, USSR),
Leningrad
1. Semiconductors--Chendcal properties 2. Keet:mchemistry
Card 1/1

5W SOV/30-58-11-3/40
AUTHORS: Luzhnaya,, N. Pp Doctor of Chemistry,
Goryunova, N. A., Candidate of Chemistry
TITLE: Some Problems of the Chemistry of Semiconductora (Nekotoryye
problemy khimii poluprovodnikov)
PERIODICAL: Vestnik Akademii nauk SSSR, 1958, Nr 11, Pp 17-21 (USSR)
ABSTRACT: A first success in this field was the discovery of semiconauc-
tor properties of gray tin by A. F. loffe, A. I. Blumg X. Ae
Goryunova6 The prediction'and discovery of semiconductor
properties of binary compounds of the*type of zinc blende (ZnS)
showed the great importance of physico-chemical-ideas in this
field. (A. F. loffe, A. R. Regelf). Formally semi conduct-or
chemistry was introduced to the Soviet Union on the occasion
of the'Eighth All-Union Conference on-Semiconductors in
Leningrad 1955 by establishing a special sectione In order to
produce new semiconductors with properties determined in ad-
vance the chemical nature of these semiconductors has to be
investiGated, especially the electron interaction of their
atoms. Recently some papers have been published abroad an
Card 1/ 3 problems of chemical compounds in semiconductors. In the Soviet

Some Problems of the Chemistry of Semiconductors
SOV/30-58-11-3/40
Union these researches have just been started. (A. G. Samoy-
lovich, A. I. Gubanov, Ya. K. Syrkin). Z. G. Pinsker obt-ained
data on the characteristic features of electron density distri-
bution in semiconductors by means of electronog:raphy. Semi-
conductor properties are of great importance in boundary
layers of two materials. The physico-chemical analysis is con-
sidered as an effective instrument in solving the probljms
mentioned. Researches on complicated semiconductor systems
have been started in the Soviet Union in the Fiziko-tekhniches-
kiy institut i Institut metallurgii im. A. A. Baykova Akademii
nauk SSSR (Physico-Technical Institute and Metallurgical
Institute imeni A. A. Baykov AS USSR). These researches were
to be developed in the chemical institutes, especially in the
Institut obshchey i neorganicheskoy khimii im. 11. S. Kurnako-va
(Institute of General and Inorganic Chemistry imeni N. S.
Kurnakov) where in 1958 the Laboratoriya fiziko-khimicheskogo
analiza poluprovodnikovykh veshchestv (Laboratory for Ph~-sico-
Chemical Analysis of Semiconductor Materials) has been e3tab-
liohed. Such a laboratory is also established iii the Institut
fiziki i matematiki Akademii nauk Azerbaydzhanskoy SSR (111-ti-
Card 2/ 3 tute of Physics and Mathematics AS Azerbaydzhanskaya SSR).

Some Problems of the-Chemistry of Semiconduotw~s
SOV/30-58-11:-3/48
Investigations of mechanic properties are to be carried out
during the next time in the Institut-poluprovodnikov Akademii
nauk S8SR (Inatitute,,of Semiconductors AS USSR). Also theTr
properties under high temperature are to be examined. In-
vestigation.of materials qf~spinel st.ructure iualdo of great
importance (G. A. Smolenskiy). The correlation method is con-
sidered very_~useful in connection wi.th, these,, Xosearohe.s (V. P.
Zhaz~)0~16_A* Fqtroq, M-Bw Mirgalovskayr I
4 .. . - A, devB. oped methods
f or-producing, semiconductor. *mat er1a,1v.,,with-. high - purlty, Aegree
i.nj orm -of -Perfect. mon.ocrys~ta-ls*, Papex~p-by.:' 14,-- Ve-, Tananayev,
A&, V... Novoselova. I,_.P..._A-l.im&rin. on.-.,t)L~s-field(bxe mentioned.
'-Finall.SF'the authors, mention_ the_,gre at. -importance of , semi-
conductor chemistry for establishing 'fL~new techniquea
Card 3/3

78-3-3-21/47
AUTHORS: Gorshkov, I. Ye. (Deceased), Goryunova N. A.
TITLEs The Quasibinary Section of GaSb-InSb of the System Gallium-
-Indium-Antimony (Kvazibinarnyy razras GaSb-InSb sistemy
Galliy-indiy-surima)
PERIODICALs Zhu3nal Neorganicheskoy Khimii,1958,Vol. 3, Nr 3,pp.668-672

ABSTRACTs The quasibinary section of these alloys was examined by therm-
al analysis, determinati on of microstruature as well as by
radiographic analysis of this system. The nature of-the
interaction of the compounds in the system GaSb-T-nSb is like
that in-the eyatem AlSb-InSb. With the produced alloys
microstructure-investigations and hardness determinations
were performed. At first the solid.solution, enriched with
the compound GaSb, and at the end the-solid solution, en-
riched with InSb, crystallized from the*system., The micro-
structure investigation of the alloy containing 25 % InSb
shows a smaller dendritic heterogeneity. The X-ray strudural
Card 1/2 analyses according to Debye-Scherrer also showod the

78-3 3-21/47
The quasibiriary Section of GaSb-InSb of the System Gallium,-Indium-Antimony
formation of solid solutions. The parameter of thi,3 space
lattice in the homogenized alloys changes according to the
lineax.law from GaSb-to InSb. There are 4 figures and 15
references, 6,of which are Soviet.
ASSOCIATION& Fiziko-tekhnicheskiy institut Akademii nauk SBSR
(Physical-Toohnioal Institute,AS USSR)
SUBMITTED3 June 25, 1957
Card 2/2

,AUTHORS: Garyunova N. A. Kolomiyets, B. T., 57-26-5-11/36
0, V. P.
TITLE: Vitreous Semiconductors (Stekloobraznyye polupro7odniki)
II.Glass Formation in Alloys of the Chalcoqenidea of Phosphor-
us, Arsenic, Antimony, Bismuth andlrhallium(II.Stekloobrazovaniye
v splavakh khallkagenidov foefora,myshlyaka,surlmy, vismutA i
talliya)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 28, Nr 5, pp. 981-
-985 (USSR)
ABSTRACT: In the present paper the authors attempted to determine the
maximum limit of the vitreous state by means of a variation of
the cooling conditions in the earlier described systems. This
became a necessity in connection with the investigation of
their semiconductor properties. A comparison of these proper-
ties in substances of identical chemical composition, however,
in different states,-in the crystalline and in the vitreous-
proves to be of great interest. Alloys of 7 paeudobinary sect-
ions of the ternar systems served aSinvestigation samples:
1) As2Te 3_AQ2S3; 2~A92 S3_As2Se 3") A82 Se3 - A62T e3; 4) As2S 3-
-Sb2S3; 5) A82Se 3 -Sb2Se3; 6) T12 S-A 82S3; 7) Tl2Se-As2 Se3 as
Card 1/4 well as alloys of thelPseudobinary section of the system T12Se.
..........

Vitreous Semiconductors. 1I.Glass Formation in Alloys of the Chalco-57-28-5-11/36
genides of Phosphorus, Arsenic, Antimony, Bismuth and Thallium.
.As 2Se3 -T 12 Te.AS2T93 They were investigated under two kinds
of cooling conditions. It is important for the investigation
of physical properties and for the clearing of the mechanism
of glass formation in chaloogenous glass to investigate the
crysta Illization processes and the phase composition of the
crystallized substances. This problem was studied by the auth-
ors together with the Institute for Crystallography, of the
AS USSR (Laboratory of Professor Z. G. Pinsker). A comparison
of works conducted at the same objects showed that the cry-
stallization process can proceed in various directions under
different conditions. In the crystallization of substances in
the shape of blocks it is possible to characterize the inter-
mediate stages of annealing by the simultaneous coexistence of
the crystalline and the vitreous phase. On the contrary only
completely crystalline substances are obtained after anneal-
ing of thin films. On the strength of th4reliminary investi-
gations it can be said that, as was to be expected, the trans-
ition of all investigated substances into the crystalline state
is possible. Howevei-)this process is complicated. At an approach
Card V4 to te limits of glass formation the crystallization in general

Vitreous Semiconductors.Il. Class Formation in Alloys of the 57-28-5-11/36
Chalcogenidee of Phosphorus, Arsenic, Antimony, Bismuth and Thallium
is facilitated. Invefftigations in this direction are con-
tinued. In this paper the limits of glass formation in sy-
stems on a phosphorus basis were moreover, investigated. The
systems: As 283-P283and As2Be3vp3Be3 were syntheaized.'The
glass formation was also determined under two kind f sf-
thesis conditions - at slow and quick cooling (haloineg
figure- 3). The phosphorus sulfides and -selenides permit to-
gether with other chalcogenides to produce a great number of
vitreous substances. The properties of these substancea.should
be subjected .to a thorough examination. In the paper (Ret 6) then
was mentioned that the semiconducting glasses admit a consider-
able deviation from the atoichometrical composition. From this
viewpoint the ternary system T1-AsvSe was investigated at
slow cooling (figure 4). It can be discerned, that the domain
of glass formation in the system Tl-AsvSe is comparatively
great. Therefore the diagram of the pseudobinary system
TlSelAs 2Be 3' which assumes. an interaotion of the stoicho-
metrical amounts of the binary components, yields consider-
Card 3/4 ably less vitreous components than that diagram, which is

Vitreous Semiconductors.Il.Glave Formation in Alloys of the 57-28-5-11/36
Chaloogenides of Phosphorus, Arsenic, Antimony, Bismuth and Thallium
obtained on the basis of the intial elements. There are 4
figures and lo references, 4 of which are Soviet.
ASSOCIATION: Fiziko-tekhnicheakiy institut AN SSSR, Leningrad
(Physico-teebnicil. Instituie, AS USSRO' Ian-ingrad-)
SUBMITTED: April 15, 1957
1". Semiconductors--Phase studies
Card 4/4

AUTHORS: Gor uuuwA,-L A., Fedorova, N. N. SOV/57-58-8-9/37
Sokolova, V. I.
TITLEt On Indium Phosphide With Stoichiometrical and Non-
Stoichiometrical Composition (0 fosfide indiya stekhio-
metriohaskogo i nestekhiometricheakogo sostavov)
. V"7"'i ,
PERIODICAL: Zhurnal tekhnicheskoy fiziki, 1958, Nr 8, pp. 1672 - 1675
(USSR) I
ABSTRACTs This is an attempt to determine the width of tha homogeneous
zone in InP, at least in first approximation, by determining
the lattice constantBof indium phosphide, when an excess of
one or the other component is introduced into the indium
phosphide. Moreover, it was intended to obtain reliable data
on the identity period of indium phosphide which was produced
from pure substances. The indium used in the synthesis
contained only negligible traces of copper, according to
data-from spectral analysis. The phosphorus which was purified
by repeated washing with hydrochloric ucid contained copper,
aluminum, iron, magnesium, and silicon in quantities of a few
Card 1/3 thousands of a percent. Bismuth, antimony, lead, tin, zirc,,

On Indium Phosphide With 3toichiometrical and. Non- SOV/57-58-8-9/37
Stoichiometrical Composition
and arsenic could not be..observed. According to data from
spectral analysis all samples were produced by an immediate
combined melting of the components. The procedure in the
production of indium phosplide samples with an excess of indium
or of phosphcrus is described. The stoichiometrical InP was
produced by two methods, which are described in short. The
samples with an indium excess all exhibitAd a picture typical
of two-phase substances. The samples with a ph(:splbrus excess
also yielded the picture of a two-phase substance. The
phosphorus veins and the inclusions had a red color. No
indications of a second phase were found in the polished sectiore
of stoichiometrical indium phosphide samples. In the X-ray
analysis a simple and a refined powder method were applied.
The refined X-ray diagram was taken with a Cu K Lt -radiation
according to two methods. The evidence presented shows that
the identity period of indium phosphide is equal to 5,8693
and that it does not vary within a range of + 0,0006 1, if an
excess of the one or the other component is introduced. There
Card 2/3 is every indication that the width of the homogeneous zone

On Indium Phosphide With Stoiohiometrical 57-58-8-9/37
and Non-Stoichiometrical Composition
in indium phosphide is very narrow. Professor D. N. Nasledov
and Professor B. F. Ormont discussed the results of the work
with the authors. There are 2 figures, I table,and 19
references, 4 of which are Soviet.
ASSOCIATION: Leningradakiy fiziko-tekhnicheskiy institut AN SSSR
(Leningrad Physical and Technical InstituteAS USSR)
Nauchno-issledovatellskiy akkumulyatornyy institut
(Scientific Research Institute of Accumulators)
SUBMITTED: October 26, 1957
Card 3/3

AUTHORS: Goryunova, N, A., Radautsan, S. 1, 3011/57-28-9-8/33
'fITLE: -__Vo~lidSolutions in the System InAs - In
Se
(Tverdyye
2
3
rastvory v sisteme InAs - In 2Se.)
'
PERIODICAL: Zhurnal tekhnicheskoy fiziki, 1958/W ?
,'Pp. 1917-1921
(USSR)
ABSTRACT: This paper is a continuation of the investigations of the
homogeneous domains with a zincblende structure in the
pseudobinary cross -sections of ternary systems which were
carried out in the Leningrad Physical and Technical Institute.
The results of the investigation of the InAs - In 2Se 3- system
according to various methods show that in this system a num-
ber of solid substitution solutions are found ranging from
10011 InAs to 40% InAs-6&o In Se inclusively. As was found
1
2 3
in the GaAs - Ga
Se
- system (Ref 5) the diffusion in the
2
3
solid state is obstructed in connection with the covalent
character of the chvmical binding. A long-term annealing, how-
Card 1/3 ever, leads to a certain homogenization~of the alloys, which

Solid Solutions in the System InAs - In 2Se3 SOV/57-23-9-8//_'o3
is substantiated by the diminution th,~, dendrites. Ac-
cording to the resulto of Lhu experiments anneal-
ing under pressure cons i cl o rably this process. The
possibility of the formation of Goli~- ~;olutions in the InAs -
In2 Se 3- system indicates that the type of binding in both
binary components is very similar. In the near future the
electrical properties of samples of this system will be
thoroughly inve3tigated in order to find out wh~ather they are
qualific-3 for practical use, An ',"-r,,)y annlvais -,-ris cnrriod
Out 'I'': 1. :1. an(I A. V. c)tru(~jj;jjjn,-.j. The authors express
their thanks to.Prof. D. M. Nonlndov-for his constant interest in
the progress of this study"and his help in creating the necessary
conditions for making it. There are 7 figures, 2 tables, and 3.1
references). 4 of which are Soviet.
Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
(Leningrad Physical and Technical Institute.,AS USSR)
'MIMITTED:
October 14, 1957
Card 2/3

j~. 'J.
~!02--Yrncv% I.(A0'.Iiyetz:
-2
'

Vitrooiip
Iv. Wchauisms.~of Vitrification,: -(M

Vo 'OCII o .1 F:
C) ooo:,.
Vol 28
-C,--.T," AL: .',jhurnnl teklinicheskoy fizild, 1958/ N11- 9, pp. 1922-19)"
C Yhij is r- etudy Of the e-,las!1 fori,-,ation calability of
conductore. info.-mation is -uresented 'Le:'--i-ing (--)n t*-ic
vre~:vnfi state of -roble-7i.-i connentCj .-~4i-jj tj:C! cl-nic--l wlture
of f~ln3o formatior -,3 CoIlocte-d E2-om recent r)ublicotionc. M
these pavers are confined to a studY of o.-.-ide -lasoeo or
of or,v-an4C glances. Tn this na7er a Gualittu-
tive -picture of Clas, formation io ,)resented .-i'ii-ch is based
w)on exper-4-aentv uilch a grout-) of chalkogenou Of OOMe
ot'ier su,-:icondLICtOI'S concerninj the cl--,-ri~tclller of the chen-i-
cal bindi' n,:'.. The at,,thor.,i arrived 0-1 th- foII-o,.,in,- conclusiops:
t !I C-- -1,13-. formation ic connected ,-,,ith the c'-,omical nt,.ture of
C
atora~~,, -11ith Ue cih--r.5cter of electron interaction between
atams and with Ihic rf-xrtic,,xIar 'ea'ure-~ e-hbfted b.-,,r the
ly/'~ Choi-t-runge c molten stat-e are connectr---I with

:1'.C 0 57
'."hc neces~:ary cordition of glbss forriLtion
u-ci.1,tence of a oov,--~Ient bindin,g, in theae rubqtallces
L1,10 1.1011C~jj
th-: oolld E,nd in statc. rilie metallization of
U-
ation. In rox-
4.-~ covalent bin,li-n.-.-s obz-truc~c t'-e clcss ~crn-
t-l'cme c,.2~-,zl it i-:-3 even prevented. Tht-, toti-ahodron covnient
bindinl- fo-min,T accordin.- to the Orinn---,ow.,er-,-01~
,Kommerfm~lld) 2.-ulo. -7.,hich ar-~ not destroyed in the melt also
V,! 11 t foa-w;-tion. There are 3 tr,.Ibles -nd j4 ref-
fil,enco!~, 11 of are r, vi ~a t
C- C -7, R
-F^i-iko-te):h--iicheOkiy ;nstitut
Technical Inat~ tute AS TTI,.R)
(Lenine-r----d &nd
(.;a:cd 2/2

"JV '2
AUTHOR,)'. Goryunoirai-Nit. A.*.,,,,, Burdiyan, -1. i.
T IT 1, l.-.' oolid 3olutions 'An thn -'L;b-(;.-0;b ra.,A~-,:y
v sisteme JSb-UaSb)
Doklady Akademli nauk t;SSR, 1958, Vol, E-o, N'r 5, PP~1031-1034
(n',SR)
ABSTR.ACT: The binary es of the nspude-binary c.ross eection of
the terntiry 9T.TieV Al-~;b-Ga In question. a--e st)n_iconauctors
of.-the ti-,,tpe A-B Publications dealing with their pioper-
ties are-very numerous at pre3ent. The poscibility of a
formation of homogeneous dowAins in itlloys of substances f.,f
this ty . interesting for the production of' semicorductor,-,.
pe iq
Such alloya exhibit a combination of electric and physico~
chemical'~qropertieu more favorable for practical purposes than
is the e*,Ju,- with binary compounds. A short survey of publi-
cations .4h given (Refs I ADPR2'Crtly Xester and Tofna
(Meter and Thoma, Ref 1) did not take into account the cir-
cumstanr~o that the main characterit-ic feature of these systems
Card 1/4 is the -Uforz non-equili~rium states. This is connected

SOV/Po-l 20-5-28,167
,Solid SolutionsAn V.eIAISb_Ga3b System
~with a distinctly marked oovplent type of interaction betw-?en
the aboms.of these substances. Onefof the authors aasumed that
these solid solutions exiat in reality. The results shotn in
the present paper confirmed this assumption. Since the sub-
stances immediately after the synthecis decidedly had a heter-o-
grzneous 3tructure they worc hc=o,-,cnI".ed by mpans of a zone
melting. Thin new utep turned otit to be very convenient, be=
fore the thermal analysis. The alloys were investigated
ci-e mically byT. V. Cherkashina. The results obtained by the
thermal analysis differ to a great extent from those obtain-
ed by Kester and Toma. They are shown in -fig-ure 1~ The ra-
aults of' thp authors prove that in the said system the inter--
action of the binary eystem vnder conditions which approach
towards enuilibrium has no eutectic. character, but leads to
the formation of solid solutions in a wide range of concpntra~-
tion. The rising content of GuSb increaseq the rcsietance
of the alloys against the atmoupberic humidity. t,'tirth-rmorp
the phase diagram of a greater rumbor o~ alloys was thorough,
1y inventiprAted. The solid iolutions produced arf, assumed.
to be solit~ substitution solutions. These resulti inade possible
Card 2/ 4 the explp~vation of the contrAdiction betweon the data obtained

Solid 3olutions in the Al.Sb-(;a,-~,b Gystem
SOV/2o- 12 or 548/67
by. the authors and those-obtained by Kbster_and 9brin..-This
contradiction consiets in the aibstitution which takes place
in 8ystems of the P-ame type with components which replace
one another and deviate from one another acccrding to all
and Tn~'-Trt,!.s), whbreas thie is not
the case with the system 1'1'1b-G,0*,b in which the components
which aubstitute 'one another are related to each other- From
the data given in tuble 1 the conclusion nay be drawn that
the f9rmation' of solid. sclutioqs, of the type A,~ITBV in a wide
concentration rpaigi take.- place"orly if. the rclativf? dif~
.f0r~,nce of the elPc:tri_c: a'1:'?initY'6onst_-At of the. elements
., At ~
which 3ubutitut~ one anbther doet not' exceed 9,4 X
Takktareva arid A. ;-,.. BorshchevuAiv ao'ozi,-ted In this inve.-Itl.-
gation.- It cari-ieqo~lt in the'-laboratory 3, IV. V70-
lumiyets. 'Phe.-re a rN I figure, I , tabl'i F. I- and 9 r6ferenk~,~~,, 6
of' are SovieL.
Para .15/4

,,ilid fllolut:~nrjs in the
I kT Iq "--isik~-,-tokhricher4tiy in.,-titvt Ak,%'dpm,;,:i
Nhysil:otochnical Trstitijte-iUS,.US'~R)
by T f fe
I~j7
nauk
h e
f! i) BM, I TT,~'D -'4,pbrual"I 18, 19.56
1. Serdeonductors--Materials 2. Seraiconductors-Production
3. A16~um-antimony-'Galliiu*m sy-s-tems-Properties
4. Alum.inum-antimony-Gallium systems--Ana-lysis
Card 4/4

24(6)
AUTHORS:
TITLE-
PERIODICAL:
Goryunova, N. A.# Radautsan, S. I. SO'1/2o-121-5-22/50
The Solid Solutions in the System InAs-In 2Te3(Tverdyye
rantvory v sisteme InAs - In 2To3 )
Doklady Akademii nauk SSSRp 1958, Vol 121, Nr 5,
PP 848 - 849 (USSR)
ABSTRACT: This paper gives the results of the investigation of the
system In-As-Te. In the pseudobinary section InAs-In 2Te3
of this section solid substitution solutions(tverdyye
rastvory zameshche-niya) formed according to the principle
of heterovaleat isomorphism were observed. As initial
material for the synthesis, the following materials
were used: 99,995 pure indium, arsenic after a double
sublimation in a vacuum,and tellurium after a double
sublimation in a vacuum and after a 12-fold purification
by zone melting. The authors synthetized 7 compositions
of the section InAs-In 2Te31 the composition of the alloys
is given in a table and the experimental conditions are
Card 1/3. discussed in short. According to the results of the X-ray

The Solid Solutions in the System InAs-In2Te3 SOV/2o-121-9-22/50
analysis, all the samples have the structure of the
zinc blende (sphalerite) where the lattice parameter
depends linearly on the composition. In this pseudo-
binary section, therefore, there are solid substitution
solutions in the entire concentration interval. Besides
the lines which are characteristic of the structure
of the zinc blende type, additional lines were found in
the Debye (Debaye) cryotallograms of In2To 3' There were
no such lines in the investigated solid solutions. The
differential thermal analysis was carried out by means
of the optical pyrometer developed by Kurnakov. The
results of this thermal analysis confirm the results
of structural analysis by means of X-rays. The authors
found clear critical points for the solidus and for
the liquidus, which are characteristic of the diagram
of state of solid solutions. A dendrite structure
(in addition to a grain structure) was found in some
samples. According to the experimental results of this
Card 2/ 3 paper, solid solutions are formed in the system InAs-In2Te 3*

The Solid Solutions in the System InAs-In 2Te3 SOVf2o-121-5-22/5o
The investigation of electric properties as a function
of composition would be very interesting. Moreover,
it is necessary to investigate the photoelectric properties
of the alloys. The comparison of the physico-che-mical
and of the electric properties of such systems may supply
some information concerning the mechanism of the processes
investigated. The authors thank Professor D.N.Nasledov
for his constant interest in this paper. There exe 2
figures, 1 table, and 9 references, 5 of which are Soviet.
ASSOCIATION: Fiziko-tekhnicheskiy institut Akademii nauk SSSR (Physico-
Technical Institute)AS USSR)
PRESENTED: April 18 1958, by A.F.Ioffe, Academician
SUBMITTED: April 4, 1958
Card 3/3

GORYUNOVA, N.A.; YAWROVA, NoN.
bolid solutions in the system ZnSs - GaAs. Fiz. tver. tela, I no.2;
)44-345 7 '59. (MIRA 12:5)
LleniWadskly fixiko-tak:hnichaskiy institut AN SSSR i Veasoyux-An
na,uchno-isoledovatellokiy akkwmlyatorn" institut pri Gosplane SSSR.
(Solutions. Solid)

$.I.; rAMTABINA, Y.I.
Homogenization of alloys of the system InAs - %S83 by means of
annealing under prossurso Piz. tvar. tela, I no.3:312-514 Mr 159.
(MINA 12t5)
191oningreAskly fivike-tekhniohoskiy institut, AN SSSR.
(System (Chemistry))
110
4

GORYLOTOVA, N.A.; RADAUTSAR, S.I.; KIOSSZ, G.A.
Now semiconductor compound in the system In - Sb - Te. -Nis.
tver.tela 1 no.12:1858-1860 D 159. (KIM 13:5 )
1. Moldavskiy filial Aii SSSR.
(Indiuw-antimomy-tellurium alloys-keetric properties)
(Semiconductors)

1V,4 1
a g. ga
-d . . A . . . Ali
~.u U. Z A, I.,a
I'L : I . . j i
"j- V t
jj
tjz:
J. alI E
jg.2- -4
31
pt .9
All &1 1.1

GORMOVAY N. A.
"Some Remarks Concerning the Formation of Semiconducting Tetrithedal Phases."
report presented at the Internaticnal Conference on Semiconductor Pbyzlco,
Prague, 29 Aug - 2 Sep 60.

0.rca..ch~lye To tt1lw-,ramncr.-i 1^11nzrAd, 19';9-
Sr.tkI-br.--.oyc -tojmlye; 'trudy Trctlyc7o -c~uztto~o sove3rch&-ilys Lentngrra,l,
16-20 ncrya!~ryu 1959 (Vit"ous St^t~; Tr-.=tims "f tr~c T~Ird Atl-UnIon Con-
!-.wcx 19,59) K~Cov'
forenc "M tb. vltre.~' S..tc, Bela In 1-03nz-sm
lid-vo &'I SSS-R, 1960. 5~4 P. Errata oLly ineertti. ),2CP~ copies printed.
(Series; Ito: Truly)

InstItut kiixil. 611.#Xzt~., A3md~ll &~k =H. Vaecolvzhcre
Z
IthizIchorlwy. obeh.hest,o lmerl, D.I. H-deloy- " C=-'ret--yy ordena
Lenica opticheskiy Inatitut Inent S.I. VaTilows.
=torial Doorl: JL.I. Avg4stInikj V.P. Urzakov,skly, K.A. Betborodov, O.K. Polvinkla,
A.G. Vlaewy, K.S. Terstroplyw, A.A. Lb.d.v, X.A. xatverev, V%S.
Xodchan~v R.L. Hyuller, Ye.A. Poray-Xo6WtA, Chalrasm, N.A. Toro'-ov, V.A.
Ylorinskeya, A.K. Takhktn&; Ed. or PubliabLue Eo"c: I.V. Sayoro~; Tech. Vd.-
T.T. bochaver.
PURPOSE-. This book In InteOded for rtscarchem in the seleuca &td technalomr of
classes.
COVMWE: The book contains the reports ana. disc.661- of the Third A.11-Union
Conference an the VItrvous State, hold In lealingrad On xocsb~r 1&.19, 19-,q.
Tbe,y deal vtth the methods and results of studying the structure of glassess the
relation b twedo the structure and propartice of g1mattz, the zaturm, or the
chmicoa I= and glass 1-tructwe, and the crystal.10cbeal.try of 61,466. TUsed
sillca,' "chamlem of vitrification, optical propertles and ZlAos structare, and
the lectrical properties or glass4a are also discussed. A number of the m.
port: daul with the depcmdence or glass properties an compoaltlact, the tinting or
gleans. "4 rallatico effect., and atchsale.2, tocualcAlo and aftead.cal Proper~
ties m- gleasaa. Other papers trent. cleas se=lewAuctora and so&^ baroatlimte
glasses. The Conference vas attended tr mom than 5W dele&1t.6 from Soviet "a
r;ost Gc~ scientific orzoal"tiors. Among the particl;nats In the discussion*
vere N.V. Solcain, Ye. V. K=LhitLskly, Tm.A. Costew, V.P. Pryanlahalkov, Yu. Yo.
G*t34b. D.P. Xcb.d1o,-P.trcy%n, C.P. Mikbsylw, S.M. Petrov, A-%. Lazarevo D.I.
LeTJU~ A.V. ShLtILOvj N.T. Plashchinakly, A.Y&. ruxattzovo E.T. DoMarava, C.V.
Byarozzovskaya, A.A. Wanov, N.K. Skorayfikov, P.Ta. SoMn, SAC. XeUer~ Ta.A.
KuZuetoov-, V.P. roidnewo A.S. ShervIevich, Z.G. PI-kar. and 0~5. Wolchanova.
The final session of the Conference van addressed by Proramaor I.r. r1taygorodskly,
Rumored Scientist and Engineer, Doctor of Tctmlcal Sciences. The foIloulas
institutes ,ere cited for their contrLbutLon to the devoloycent of glue science
mad technology: Goxularst"nnyy Cruchtakty J"tItut (State Optical Institute),
Inatitut khimll allIkAt" Ali SZSR (Inatitote of Cz-jatry, AS USSR),
Plalch..kly JAA-It.t All SSSR (MYAlcs InstItutt AS CMSX), Flx$k~Z*Xhtlcheakly
L"tit.t N1 (rby"C.Lt.hical 1-titut. AS U3CY), lastLtat ritiki &% MR
'
Xifi~k Onst-Itute Of PhYdi c3, Academy of Sclen"-, BeloruesUAys. SSR& KI"X),
laboratory of Mysiral Chemintry a Silicate* of "e Z-t1tut nbxha!~ey I AeOr6,,ftj-
chtskoy kht.1i AN ISSR, Minsk (loatitt. or General ozd Inorganic Chmaiatry,
Academy of Scien- ?LIOrus-kV- SSR, MI-1c), Ijtit.t YyaOkoaoI.k.IJar-kh
say.dintaly AN SsZRIl"titute Of Olgh Molecular Cm,;~=d%, AS USZ~R), Co4u1srat"n-
on Institut Itekla (C-4te InatIt4te for Glaza), rot-~!Arszye=r~r, Inatitut gtek. I
lovolckna, (State I-tjt~tc for Glass ribtrs). Gosw1arateent-yy i"titut elektmttxl,-
tachooLozo stekla Otmtt lmatit4t. for Elictrical. Clsa~,
31blmle lk~
h
l
tIt
t
i
h
t
i
T
l
(

et
n
c
os
a
b.
ozo
t
Snotrian Fblzjcotee.=
I,
"t,
,
y
64Y (t.ninerga State UalversIty), Koskov;xly Lht.lk-
t*khA01O&iont&kIY la-tltut (HOdro, Institute of C"eulcal Tech-,oXOZj)~tc-oIn6raAskiy
t-kb..Ioi0'h'ekjy 3113tjt.t In. (Lulremi I.atItu 1. 1"041
1-40vat)j B00"O-kiy YQIItekb*1c!w5kIy Imatitut Mi"k (Pwjv.~31= roly.Z.
Instltutv, Minsk), llovmacrk-kly politeLhal-Cheshly Inatitut
POLytec"Ic In.4titato), and Srcrd1ovs,kjy prliteLftalchtsmy Institut (By.rdto"k
rolytc,.:-I~ n- Cm!",vace ~ sponsored by t.~* Inatit~te of, Silicate
Ch~i.try AS U5.111 (A~tla& Director - A.3. C.tllb), t). V.cxcyU-..y.
cb.hchc--tVo 1.. 0.1. Ke.dellyev- (All-U.Im Ch"Ical Soci.ty local 0.1
and the G-.!.-Cvvw ordene zeal- p&fcbc.kIy lastit.t IxenL
S.I. V&VIl.- Ot.t. "Order at lAwle CPLI-I Inititut. local a-7. Y-ilov).
The 15 rqaolutlme of tne Conference Inilude recomacZdatl=. to are'salte a
Center for the purpoe of coordlea-In-I the resc-.h on r2agas to rbllsh . ~
parlaw-41c6l. un4-r t~a title ~Yltftft I ihielyu sUkI0 (P1qtJC% " CNWAI.try or
Glenn). n'd t. join the International Corrtittre ca Glasa. Tan Cooforea" thso~,x
A.k. Itbed4v, A-44-t-lon. PrOftz6or, and Ch.l~-% of the Org-411stim or C--
sit Lee; Y..A. D-xtor of Pnyic- and Y..t:,m.tL.a, Meaber' a- tt~*
Or,LamIx.tLonal Coemittoc; *,A R.L. Pt$uller, Doctor of Ch-leal. Sete"es. V~Iber
or the OreaA!%atI&r.%I CoonIttee. The elttorlal bOmxd t~,ankz O.M. PArttoev,
N.V. V&I'keashto.", L.I. D--klno. P.P. Dcbycl:.Ia, Z.X. Dutr~*, V.A. Joffe, a~'J
B.T. rGloai.~et.. w-rcnt~% so,anyony iodlia-i, vpo.-~.

vlt~oja state (C=1t.) SM/50.55
Relation Det-an the Stmct-re aid 1~ro;~rtica 0! 01"dcr
Ycv4traplycv, r.S. Gcn~rftl rrololens of structam ana rmi~rtie* or' alat6ca ~9
Dc~-~Uns, L.I. AddItivity Of Silica Gls~su Pro~4rtits In CMIeCtim WtUh
Their Struct~ 4s
Zezborc%ioy, N.A. Vitrco,~ Byatc- ",I th= Frct-lc~ of Glace St"Cturo 55
Utu~ of the Chemical 150nd ana stmcture of al-.sca
Ryuller, R.L~ [D.:ctor of Chemical Scienceal. Chemical Proj~rties of Polr%rrlc
Glas.-Fox,ting SubstahceS and the NAtut,a of VitrirIcatlon 61
Dorywova. WA., and 1~.T. Xolomlycts. P~blem CC Vitrification Re~-4Arlticc
Urascar, V.V. GIM- " a Poly--tr 76
Card 6r-2
vit"Ous state (Coat.) MN15035
'Cryatallotbecaltry of Glees-
,Bftlov, N.V. (Acadeetclaul. aj,,ja Stmct,~~ In the L101% of 0.4 Crjstra Cler.Istrv
or, sdiii.s 91
Di..%taxion 9s
MED SILICA. =RANISH OF VITRMCATICK
ru.046111ca
On the rr,,bl- of Cryut&l rz=e poematimm prom 1h.-ed
8131M U5
Vitrification rroccg& gal Glue St=ctaft 120
04 the rmbl= of ro.-Ing the 01"s StraCt~ D=jmg
Proctco 12)
I.Fluskikh, D-M., 0,A- Y-10, and V.Z, AI.ot,,.,y of rletriml
Con4'ctfe-ity or F"ed silict, And B~'Mtcs In Pica
....... .. C-1 7 /22 .......
Vitr.0- state (Cont-) s-/50,5
Y.Molen)(0, 1.11. On the rro!tl- or G1wz Forming
Chechalift, V.A., and 0..A. Y-,.ia. of' LIq,14
kryvilin. 1.T., aad O.A. Teain. Tbrmcij~aaie Prc;mrtle& of M-%~I S114cs
Of CAD-FcO-5102 alld Zy.t~
Discuftsion
Kachk.tcm of VitrIfic."ca
Volll-.htcy.' X-V- On th, StructuMl end Kluctic Cn%mcter1zt1&* Of the
Vitreo" state
A.UfrIY-&, Ye.V., and N.V. Vnihcn~hte)-n. On the I~incuccnrq Mtthol Of
StQdyl-a t- Yltdri.a.t.1- -f' 1,olycrz
k0jottaft, I.A. Optical Activity dnA VitrGri-tion 1A.2
Carl 0/22

10 sk n ;;

4 0 a

114

;wt 11 rg

A -1 '0 '9 &1

un 0

1 64
;3 '
1.5; 95

b. as 16

w tis
14

IQ

AVIIM I S)ritakAZ*. 1. N.
314-All-ftlen Coararonere so the Tilre,was state

PMMKCLLs Alsklo I kwervalka. 1960, Ir 3. pp 43-" (V332)
21s6 3rd All-Vaim, Coafaranno on the lit"am State, I
at Us and of 19". It was orges,42*4 7,7 the

SU alllk*Uv
AIF SM (NotItuto of the Chosalst:7 of 511.1"t.a
As U332). Tsomyssuoye khLadohaskoy. obaholto.tva I.-at D. 1.
Read.l.rows, (All-VaLoa Chosical 56*1*ty I-al D. x.
-11 Go-&&"Svv=tj7 aptlohoskiy LOOM.* Is.1 3. 1. 7-211.va
oMe Optleal Institute local 3. 1. TaTIlov). W;zv thm 100
reports an the *trucks" of glass. Luv*1tL&%U.O nistbode of the
witross, states the swouniss, or witrititassol, &z4
&ad tochaleal, yropr1loo of glass" "" 4.11ror.l. V,.
ou Opened 1,7 Anodoulclan A. A. Lalbed.v. ft-amstal
=4 reaulte, concerning V%* glass structure us" die=--e-f
noolind. Acadesiclax A. A. L*bod*v r*port&4 ces.
1160 and weralts at optical methods, Te. A. Por^yZ*zUta on tto

t
Wren Loa "thode X S. Tevatropl7or On, general pvabl~ *3~
'
!
oraLas
etrue tore and
y"partles of S1,ames. The 2=4 mstl=Z
*
arta see th
S re
b1
t th
1

Card I/* ea a
e pro
s w
trocces .*&tot 1. L. r
r4ll~
p
Ch
i
l P
l
em
ca
owa
lariti4a of Fpi1n!Tjc ItA""A
54 _1*
&Fhl_ &.4 I-T. 1*10,sIZOID,
A_a
N

-*a *be Probleas of Coat M ga O
ares V. Y. !.~
r
.
Ltrlfjc.Tj=j, . Mw,
as as & ?a I A are I
W~ 11, IL"g. -ft*orr or Clan. 5 ran
-
j
L
al
A, 0. T1__ Or Xa Mf
the Class Laltlao
.
. n, 3rd
reports as investigation ""Its Of 8111C.-ts,
sells and, on problma of the mobastlast of wltz1ficailoat A-1.
k -Olt the ProMen of the Forantion or the Cryo-Iliza
ate
-
ll-
th
8
1
1
0
e
14.
* Na
1
. X.
Pr ... to of MrS
$
ru tion am 'the 3truaturo Of QXL !K I M,
*.takjkh. A. To.l.
a A _:
:j
and IMMOU1. -0. the Structure,
and 0. A. T.OIA. -Therecadymsto Prop"rlies of the SUie.%* 47st."
Flo - Mr-_-510, and COO - At 2a 3 - 3102.1 0. !.
eat and Strucstural Titriflacticel X. T, Tl-k,.%b%*yn.
of Vitrification-. At the 4th mating. 13 r-2-r OTt I'M
of the glass structure and optical lavostlCaAlm mtko.*ai~T A I
-'
jDjnos" sInrrar*4 Reflection 39.otra, *f 3*41,au 3111cali
Glax2as
"i their Waticas to the 8tructurall To. 5- r~JSVICU and T. 7. Tulub.
assexal-lact" Dispersion of Licht and the 3trvaturo of :.As
glasovs-l T._As,~aXa, of %be Til,-ttlanxI
at A10.1anfilli-A. Glamss-1 V. N lobster reported on, Us
Card 2/ S the Fistchookly Xualltut AN 833R 4"Ututes of VqO1.8 A.3
cWepoas.t.
&*try and the S-W-Raewa dlap*raloul T. A. SlAcrov reported on
the acleculAr stracteres "41h. Vroperil.. of the vr7&lc12LW* VQ~rtvl
4. M. Brath"skikh -ol T. P- Chorool.LAO, "Part.4 an allractUX'&I
investigations of lead- MAd blanUthbol'alke Cloaca. with the aid of
torr".4 spectroacov.71 1. 0. TlmDV, 'The 1*1.tlca~ of
the Ordazly and 1".C.G715nala Class"
A. 0. Alek.* T.
_a AijRgh,,jl;:,s,0 he .1 . udlux-horce-
.:a
I, Tberstal Tx--Sa--*"l
1, A. Torish,rillo. "Strooter.1 to or-
4,0
I A 0
11
in Bodi~
.
.
,
9 ru,part. Xt .1th W-1
t9ron-aill.". GISSO&O.. At the 5th mating.
the In" 'Jigat too "sells of glass... A.
Aypgu and Can- rq_31, 'joron and Al-OUM& AAQ&aly of the P"Pol-
Use of 311i"t- CIAO-OB'S TO- X- G*L-fts, -On the C-Ordi-SLO" *qu
~,Gro of Llminues and boron ift A". Clawaso.1 a. P. zu-0y reported
aa structural abancon In %'GMa-2111dat. glaaroal To. A. poraj-roauto
and a. p. Zhdacov reported oes go" watro"roLol problftaff 00"OrKlaff
the stroo tore Or boron-alliouto classes MA their person, PrOd.01.1

C
d 5/8 To. A. poray-xoshit. and r. s. AndrayNO. -Sulads"..Opl. labono- %
."It". I& &be 31MOt." of C*&PI.X Tb- 15 reports
ar g

'r

TIMS 3.wd ill-valva Costume" an the vitreous $tau
FMONCIZA StgUe 1 '"0'". 1%0, Or 3. VP 43-0 OUR)
ASSRUCTO ran )Td All-voias Coafor~at as the Vitreous state won hald In
&*&loft" O'k 0a mad of 1959. %t am mgmIsed by the 1=211W
WALOU 114111oLt" AS 2`932 (tactItale of Us M.Slotly of 341104408
AS 11152). To-swasmays kh1a:141605core ahshchostwo legal D. 1.
RmAeleyo,wi, (All~lalc- Chealval society imeal P. 1. Urn4sloliv)
mat sasudarstwommyy optloboally, inatitul Ineal 3. 1. TATIZOVA
(Stale Optleal rantLtt. Lanai S. 1. Yare than 100
ropoift M the strustare or #I".. in'smagasim x.thoda, of the
vitreous ~&. %be mocumlso of 'ItrIfIdAtioz *~4
a" losbadeal Properties of S1,;aams earn daLivvr,~4. The
a" opened 17 A0614mulm, A. A. Labodev.
7

. reports dial$ WIN
--Vt! ~Z_z - At the 51h n.*%Us,
Us lavemildstlom, roon2ta of 81.5523. A A
an# sues pe-no wMarou md Aletmborox Anomaly of Its 4t_:;_
_W. of 3111"to almons'.1 To. 1. 041nots OOA lb* CCOrdL"tIQM V=-
berm at Aluminum and Smu% U7F*-u-*-dW3s.s*; 5. P. Zhd.mav r47;,ar'*d
ON trustural. changes In Varwa-MulasAs cle.58221 T*.
0 go-
and 2. P. Zhdamv reported an same controversial lyr ~fta. ;.M~-=Lzg
The stmeture at toro%-slumle Classes mad their porcaj yr.1u,11.1
To. A. Pmay-XD4bAtv a" 1. 6. A.AVXZIT. -2atoloresoople
.46" 5/4 densities to the classes.. Ths 15 reports at
-
-
~ iortles or cusess,
Us
itu asetim, Sisal sib pro
p
L. M. P.176V JLXS reported an the stracture daltrat"t1c;N of.zl~ax
the 444 of .4 Inhovagemoons .1saula C14141 1. U.
-
1. r. 04.1-stly. Istro-tare. " ?"Parties of
so.* 6~. Cie.-
so$ folynam-Aboory at the Titr4ou3 3w..-j
9. L. MYcalor "period an the s4;JIIt7 sad thm degree of dtaxoiiatioa
of the Ionic sad atamr axpoettlou of ths cl-cor
T. 2. 040I.Takly reported on She mitre of dislactric losoas, in
Slavolike and crystalline slustmaIll.alo, I T. P. retrzaltz . r-,-
vostissuo. of 00 z1oleatr1a polrisAtic.
JUIS clam".1 T_A_Jtr_-JMv, T. X. ex-a sad
AM
UvIty of a aaaas in
of ,
reported on Ins.tizail"a **rXu.
*b
tril high-Unal" ftelds, an the diffusion e.-
g. =4 X42 In no" sillca%% glss... T. A. loft.,
_vkLyA "q-1. 13-tento Grl electric Y;roiyamwx of ary,t~.Irn-,-
~
, V. rs.Mrla spoke an his slv~.tl.a
and glmo2ii.
which Or* oarr1*4 an$ "a" a~vP_r_-T4f*-:% of rofmooz X. 3.
,;e

atroP-ysv % the Wilre .1*tla L?J I=wm$ L.Asov*t& (C.ImIr for
low
GI:*
00f thi ToNsindrad Uohnalogical Institute Inful Lzso,.%) in
the roporit -no 1)4pondvacs of %be Electrocoaducilvi%y of Gloats,
Cars 4/8 0. the Ctk-%14.1 Composition'. T. A. 0. T. Usurla M
-
Z. 1. lubkove go- &nvvs1Ni6%t1a
Jr..~WkO am %he opoeifie. oiro.
M_ - D'O 3.0 In the %**-
gob %.Vfvlvy-of ".0. of the System 310 2
porature range of from 400-1300" and on the influeAce, of sdditlo:~
of sTaxiscs, m4 *Im m14. as, %be el.eirl. dond..%Lwity of lb*s%
glosses. At the jib meeting. 6 reports d.,at with gl"6o* an .%zI_
***declare. 9 with us wal.rJus of class.8 4.6 the Influ ... 0 or r..
dLailas =4 4 reports with 1-holoal proporlies of gl.asos. T. A.
lafte Saw P. 1. x1vasteau. -XIvatris Proptrtles of Sam* d4Aa_C-.ir_-
ale and 2 "a
Paper .1 am &*SAVA or
Of their Coner-1 v"k-.-132 ---A On 00 limits of the vitro
be .""MT123. - L.18.3. 11 25o - 3112 6.30 Ob es*3 An2 a.
91 - An - So. B. T. Kol-Arote =4 2. V. Parle, r.port.4 an the 09-
Mail aboarptism INN a anooor of aystmv. S ' 1,
rolonlysts, T-,
;; Alarm and 4 1 Nawnrova ropori.4 an the else.
,
trox ooft4vati y ;. Tsyzol!~,M Is. k
?!Mr-lashits, A441ceriputo %area% Igation, of Ti-
as WSM74 cbsicaganaw. v T Tarmov and T. A..
we ;:r404 *o, %he OXALA
d4teralb.4 by the. It% calorlastria moo.vars.cals. Z. ?. A.arov
card 3/0 "Parted on atracture &ad properties at forrono baron Classes and

3 6.5 L8
S/081/62/000/006/013/117
B166/B101
IV
ARHOH: Goryunova, N. A.
-----------
TITLEt Problems of the formation of semiconduotive chemical
compounds with a tetrahedral arrangement of e,tome in the
structure
.PERIODICAL: Referativnyy zhurnal. Khimiya, no. 6, 1962, 36, abstract
6B229 (liv. Mold. fil. AN SSSR, no. 3(69), 1960, 21-30)
~,TEXT-. The article examines problems of the formation of binary and ternary
~:semioonductor compounds and the chemical bond pattern in theae*substances.
It is suggestod that the basis of a tetrahedral structure be the electron
lattice formed by tetrahedrally arranged "bridges" made up of paired valence'
electrons. The formation of tetrahedral structures becomes possible when
the value of electron affinity or of the overall group ionization potential
exceeds a certain limit and makes the formation of compounds with an ionic
metallic bond disadvantageous with respect to energy. it is shown that this
condition is fulfilled when the specific electroaffinity constant (the enermr
of affinity to the ion core of the electron commencing the valence shell) ofj
Card 1/2

S/081/62/000/006/013/117.
Problems of,the formation of... B166/B101
'7.5 ev. These noti ar
each of the,compo 0
nent elements is greater than a
1~sed as a basis for the possibility of forming compounds AIIIBV'~ AMVIP
VII IT IV V~ I IV V I III VI I IV VI
'i B P multi-cation compounds A 7B.-C2., A-B -C, A B C A B 03
2
VI 113:jIV IV, III IV VII Ii V VII,
A 9C multi-anion compounds*,A C A B C 'A B C
3 4 3 2 2
IIBIII Vil
~~ITBTVC VI' and "A
C tsir'act~rls noifis 'Complete franila i6n.D,
2 4
Card 2/2

. ........
3/081/62/000/007/004/033
B156/B1O1
AUTHORS: GorYungva-,-N-,._.A., Sokolova, V. I.
TITLE: Complex phosphides
PERIODICAL: Referativnyy zhurnal. Khimiya,, no. 7, 1962, 57,
abstract 7B384 (Izv. Mold. fil. AN SSSR, no. 3 (69)11
19609 31-35)
TEXT: Experiments carried out to study the interaction between InP and
various semiconducting compounds are described. (Abstracter's note:
Complete translation.]
Card 1/1

32611
S/137/61/000/011/067/123
Ao6O/A1O1
AUTHORS: Goryunova, N.A., Sokolova, V-1.
TITLE: Solid solutions in the InP-GaP system
PERIODICAL: Referativnyy zburnal, Metallurgiya, no. 11, 1961, 23, abstract
lizhi36 ("Izv. Mold. fil. AN SSSR", 196o, No 3(69), 97 - 98)
TEXT: An investigation was made of three section points of the InP-
GaP system: 31nP-GaP, InP-GaP, InP-3GaP. Materials with about 99.999% purity
were used to prepare the alloys. The alloys were prepared in evacuated quartz
ampoules with vibration stirred heating in a Silit resistor furnace up to
12000C (3lnP-GaP), 13000 (InP-GaP), 14oooc (InP-3GaP) with subsequent rapid
cooling. The investigation was carried out by the metlods of microscopic and
roentgenographic analysis and by measuring the microhardness. It was shown
that in the InP-GaP system there exists a continuous serieq of solid solutions,
which are difficult to obtainlin the equilibrium state. ehere are 6 references.
Z. Rogachevskaya.
[Abstracter's note: Complete translation]
Card 1/1

S/181/60/002/01/34/035
BOOS/BO14
AUTHORSz Goryunovaj N. Att ~roahukhant V. D.
TITLE: Solid Solutions in Quaternary Systems on the Basin of
AInAs and InSb
PERIODICALi Fizika tverdogo tela, 1960, Vol. 2, No. 1, pp. 6-176
TEXT: The authors studied the formation of solid solutions.by a reaction
between indium, antimonide and arsenid46s well as some compounds of the
II IV V
type A B C., having the structure of chalcopyrites. These alloys were
synthesized in the usual manner (Ref. 5). They examined alloys in the
section mCdSnAs 2-n(2InAs) of the quaternary system Cd-In-Sn-AS (Tables 1
and 2) and in the section mCdSnSb 2-n(2InSb) of the quaternary system
Cd-In-Sn-Sb (Tables 3 and 4). The system mCdSnAs 2-n(2InSb) was found to
have a series of solid solutions throughout the range of concentration.
Card 1/2

Solid Solutions in Quaternary Systems on the 3/181/60/002/01/34/035
Basis of InAs and InSb BOO8/BO14
Apparently, also the system mCdSnSb 2-n(2InSb) has numerous solid solutions
ranging from InSb to a concentration close to the ratio of 1 1 1. Both
systems have wide ranges exhibiting the structure of zinc blends. Here,
a change in the physicochemical and electric properties can be
brought about. There are 4 tables and 10 references, 4 of which are
Soviet.
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
(Leningrad Institute of Physics and Technology, AS USSR)
SUBMITTED: August 7, 1959
Card 2/2
006 50
in
~101omiyet'31 tiolfl 1jae 0,11d
'qAtrifics' SX11 a X.
6~4110 U 3to-rs~ 9. of osenio 'ZBO~Zo
Gor &XII
ejujoon~~u sis 'P'p
% t~".-Ss a 110. ana
jUTSOO treous des on he .1- -q01. 11 1 of WaIf 11or"O
9601 'ba'sis 'PhOOV
'21T.~V't te 51 on the cup - 'Oheu tra-
tlerogo -nia +"as 5th 9~eTties oncen
tLs yisilre, 0 halcose n 5 ofi, ing~ Vro-9 'WA &a 0 tio -
bi-'Osry e-jeme Vit'r 9 a in 5 . Ts i&es
9tins t t the -no g 0, trie
i Ila 'a bav a To-rlu 'hiome .1.00gen
-In I'a 'Jestig erqe& 'O'nic essiVy . stoic Ila
0105 a t 313.%6 er-
a
T02% . it Vas t. is Cs'se 111,aT t Vrom t ela OTM 151 ing V -rov or
in n &n& a tione 0 8, 00 Ut tT fj alone
V'jum &e'ViB' 10 bis% t'ne'r
arse 'In, sale eat"6 a q.-rs ea ,,on'Y 'as"V no ei
us an -rs I t"' - Ob
ea6 't ess
'%A Ast
~au a to &as 0
autho
aj*jOj O"age 10 hoT gr 0"49 an tyke 'VeTe
I P'hOsp this at Vr 0'4 6 the 00 f
tio-A T S 0 of 6Iemei.iolas of 0 a tho s a 0 stanc 8 9
Yie b
0,1101 sent Con jaanl aua-
~'J.qo .. ele of a-ul 0 a to.. ser Vitr I ,It-reous
of Ot genicles e-X er lu tion
.0 the ng
Whale (Jer n el-cel) ave Cal no'n-.4it
ties Un M, a 0 oil of Ge)
iu &.13-0j8, t
OL'nts Of a e'C
ele, VA t
groVP
card,

81774
Vitreous Semiconductors. 9. Vitrification in 5/181 60/002/02/16/033
Complex Chalcogenides on the Basis of Arsenic Boo6yn67
Sulfide and Selenide
also obtained by fusing chalcogenides of the elements of the 5th group
with chalcogenides of the elements of other groups. Furthermore, the
authors investigated the influence exercised in such melts by non-
vitrifying chalcogenides on the vitrifying capability of the melt of the
two (interacting) chalcogenides. Melts on the basis of arsenic sulfide
and selenide were produced with the sulfides and selenidea of the
elements of the Ist - 4th group (except for B, Al, C, and Si). The
ayntheses were made in the concentration ranges of -5 mole% of the
ternary systems Me - X - As, where Me is an element of the first four
groupsq X - sulfur or selenium. The vitrification of the systems As Se
Me is illustrated by phase diagrams for the elements of ihe groups I IV
in Figs. 1-4. The sulfides yielded similar results. Figs- 5 and 6 show
the experimental results in the form of diagrams which illustrate the
ratio between the vitrification ranges of all elements from Cu to Pb.
In conclusiono the results are briefly discussed and compared with those
of Zachariasen and Winter-Klein. There are 7 figures and 4 referencesi
3 Soviet and 1 American. X
Card 2/3

81774
Vitreous Semiconductors. 9. Vitrification in S/181/60/002/02/16/033
Complex Chalcogenides on the Basis of Arsenic B006/BO67
Sulfide and Selenide
AS30CIATIOWs Fiziko-tekhnicheskiy institut AN SSSR Leningrad
(Physicotechnical Institute of the AS USSR, Lbningrad)
SUBMITTEDi May 13, 1959
Card 3/3

81775
Tr, 0 0 S/181/60/002/02/IT/033
ql~300 B0061B067
AUTHORS: Baranov, B. V., Goryunoval N. A.
RMW
TITLEt Preparation of Homogeneous Solid Solutionslin the System
AlSb InSb,~X
PERIODICALs Pizika tverdogo tela, 1960v Vol. 2, No. 2, pp. 284-287
TEXT: On their search for new semiconducting materials with optimum
electrical parameters t4e authors report on investigations ofk1solid
solutions of the system,'AAlSb-InSb;jthe first component shows a consider-
able width of the forbidden band, the second one high carrier mobility.
The first experiments showed that no homogeneous solid solutions of this
system could be obtained by ordinary methods. The results of attempts
of homogenizing the alloys are discussed in the following. Table I
indicates the purity o the initial substances. The alloys were synthesiz-
ed in closed graphiteXcrucibles which had been boiled in concentrated
nitric acid, washed in distilled water, and heated at 11000C. The
crucibles with the substance were put into quartz ampoules filled with
spectrally pure argon~ heated up to 11000C, and then slowly cooled in
Card 1/3

81775
Preparation of Homogeneous Solid Solutions S/181/60/002/02/17/033
in the System AlSb - InSb BOo6/Bo67
the furnace. The alloy obtained was coarsely crystalline (Fig. 2), and
the X-ray pictures showed broad bands corresponding to the nonequilibrium
solid solution. After a tempering for 120 to 500-700 hours between
540 and 60000 small dark crystals were observed (Fige- 59 06), and the
X-ray pictures showed line systems indicating a change in the lattice
parameters (Fig. 8, Table 2). Heating above 6000C led to volatilization
of antimony, a prolonged heating did not improve the homogenization.
Further investigations showed that the microhardness of the visible
crystal deviated es Iaentially from the microhardness of the two components
2
(e.g., 800 kg/mm -~"A.lSbt 420,'IneA:220 kg1mm2). The authors explain
this by the fact that the presence of an eutectic in the alloys is
connected with the formation of aluminum carbide. The homogeneous solid
solutions obtained also showed higher corrosion resistance. In contrast
to the non-homogenized samples which easily decompose in air or water,
the homogenized samples were not affected by air and water even over a
longer period. Also a treatment with 0.01 N ECI for 500 hours did not
etch the surface of the homogenized samples; 0.1 N HCl had no noteworthy
influence on corrosion resistance. Hence, the authors succeeded in
Card 2/3

81775
Preparation of Homogeneous Solid Solutions S/181 60/002/02/17/033
in the System AlSb - InSb B006YB067
obtaining solid solutions by tempering with subsequent cooling at a
temperature which was much higher than the melting point of the most
easily meltable component. In conclusion, the authors thank Professor
D. N. Nasledov for discussions and his interest in this work. There are
10 figures, 2 tables, and 9 referencest 3 Soviet, 5 German, and
1 British.
ASSOCIATIONt Fiziko-tekhnicheskiy institut AN SSSR Leningrad
(Physicotechnical Institute of the AS USSR, Leningrad)
SUBMITTED: May 13? 1959
Card 3/3

100
AUTHORt
20616
1045f 111(ol 11,51111,50
510631601005100510051021
A051/AO29
Goryunova, N.A., Doctor of Physical Sciences
TITLE: The Chemistry of Diamond-Like Semiconductors
PERIODICALt Zhurnal Vsesoyuznogo Xhimicheskogo Obshchestva im. D.I. Mende-
leyeva, 1960, No. 5,7o1- 5, Pp. 522-534
TEXTs The author discusses the nature of binary compounds with a structure
of zinc blende, i.eolanalogues of diamond silicon, germanium, gray tin, dis-
covered only recently (Ref-3)- It is known today that simple and complex
substances, which crystallize in diamond, zinc blends, wUrtzite structures
or close to these (e.g.,ohaloopyrite), are considered to be semiconductors
and are combined into one crystalline group (Ref-4,5). It is also establish-
ed that'tetrahedric covalent bonds create the most'favorable conditions for
electron transfer. It is pointed out that substances of the orystallo-che-
mical group have a great future for their application in radio-electronics.
AII113v-type compounds are applied in the semiconductor industry bee&use they
are the closest analogues of semiconductor elements of the IV group of the
Card 1/24

2o616
The Chemistry of Diamond-Like Semiconductors S/06 60/005/005/005/021
A051 YA029
periodic system of elements. The latter group is known to have a series of
physioo-chemical properties and electrical parameters other than those es-
tablished in diamond, silicon, germanium'and gray tin. Special mention is
made of the solid solutions InSb-GaSb which-were first investigated in the
Soviet Union (Ref.9,10). The author stresses the fact that intensive search
for new semiconductor materials is going~on all over the world. One aspect
of this search is the determination of the possibility for producing semi-
conductors based on complex multi-oomponent substances of the orystallo-che-
mical group diamond-gray tin. Difficulties encountered in this respect are
in the production of highly pure and single crystal substances. The author
lists and comments on the works of various Soviet and foreign authors with
respect to the following subjects: the formation of substances with a spha-
lerite and wdrtzite structure, physico-ohemical properties, production of
initial and binary materials, electrical properties, bond type and property
changes, solid solutions and new semiconductors. Goldschmidt synthesized
many.compounds with a diamond structure. Table 1 lists part of the periodic
table where-a frame is placed around the elements yielding binary compounds
with a tetrahedric distribution of the atoms in the structure, with at least
one of the elements equidistant from the IV group of elements. Table 2
Card 2/24

20616
The Chemistry of Diamond-Like Semiconductors 3106 60/005/005/005/021
A051YA029
lists the structural types formed by compounds of the elements in Table 1,
and accepted at the present time as the symbols of compound types. The bond-
model of the diamond is taken for interpreting the properties of the given-
group (Ref.4, 16-19). It is stated that the binary compounds included in
the orystallo-chemioal group under discussion are similar to each other in
their physioo-chemioal prop Properties typical for the entire group
are best expressed in the Alflifso
B group of compounds, closest in the location
of their component atoms, All these substances have a low solubility in
water, most of them are stable to oxygen and air moisture (excepting alumi-
num compounds). All the substances are derivatives of hydrogen acids and
form the latter when decomposed. In most cas they are the only compounds
Th V
which form in the given systems. Thus, the A I B compounds are given spe-
cial attention in this article as being only relatively recently discovered
as compared to the AIIBVI and AIBVII groups. Several phase diagrams are
presented in Fig.1-7 and are seen to be of the same type. Regardless of
the noticeable dissociation in almost all the compounds investigated from
this stand point there was a noticeable tendency to form during solidifica-
tion compounds with a stoichiometric composition. In order to solve the
problem of the'~idth-of the homogeneity region in the compounds-of-the
Card 3/24

20616
The Chemistry of Diamond-Like Semiconductors S/063/60/005/005/005/021
A051/AO29
AIIIBV type, a large number of methods must be applied. An X-ray analysis of
indium phosphide and gallium arsenide did not indicate the existence of a
noticeable region of homogeneity near the stoichiometr!c composition (Ref. 31,
321, Table 3 is a list of the main physico-chemical properties of the
Al BV type compounds taken from the literature (Ref.13, 16, 33-4l)- It was
found that with an increase in the temperature the coordination number in-
creased coming closer at certain temperatures to a dense packing (Ref.46).
The AIPI type was found to behave in a different manner in the molten
state, showing a tendency to the foifttion of molecular structures (Ref.42).
For Most of the substances of the A B type the chemism and the kinetics
of the action of various reagents have not been studied. In etching, the
etching agent has to be selected by experimen-~al means (Ref.16, 51). Some
of the characteristics of the latter group which have not been thoroughly
investigated are the Debaye temperature thermal conductivity, heat of forma-
LBV
tion, etc. Compounds with a sphalerite structure, both of the AIY I and
AIIIBV type, catalyze oxidation-reduction reactions (Ref-56). Germanium was
discovered during the last war as semiconductor, the unusual properties of
which could be detected only after a super-fine purification and obtaining
Card 4/ 24

2o6:L6
The Chemistry of Diamond-Like Semiconductors S106 60/005/005/005/021
A05 1 Y1029
a single crystal. At present the analogues of Ge and Si are gradually in-
troduced into the semiconductor industry, also binary and more complex al-
loys with a zinc blends structure. The future prospeots of applying the
latter in the semiconductor industry is also determined by the degree of
purification and perfection of the crystals, thus the problem of their pro-
duction is connected with the purification of the initial materials. Tho
processes of precipitation, admixture extraction with solvent, vacuum frac-
tionating distillation and thermal dissociation are used for this purpose
(Ref-57-59). The method of fractionating rearystallization is Used for the
metallic components of semiconductor comfounds of this group and also for
the semicondu6tor materials of the AIIIB type. In order to obtain single
crystals, Chokhrallskiyts method is used. These processes are based on the
application of the difference in the compositions of the contacting solid
and liquid phases of the substance in crystallization and displacing the'ad-
mixtures from 'the crystallization front. Actually, the substances are sub-~
jected to repeated zonal recrystallization and the single crystals are dramout,
of the purified melt. The distribution coefficient of the ad-mixtures (K)
plays the most important part in the purification process, which character-
izes the ratio of the admixture content in the solid phase to the admixture
Card 5/ 24

20616
The Chemistry of Diamond-Like Semicond ,uctora 5/063/60/005/005/005/021
AOWA029
content in the liquid contacting it. When K is less than 1, the purifica-
tioh is very effective. In the case where the chemical nature of the admix-
ture is close to that of the main substance, K is equal to I and the purifi-
e-mentioned methods becomes rather difficult. The techno-
cation by the abov
'
logy of the"binary semiconductors (especially antimonide8) is mostly similar
to that of Ge. However, due to the volatility of the non-metallic compo-
nents~ arsenides and phosphides, the methods of their production and purifi-
cation are aomewhat changed from the other, in order to eliminate the harm-
ful effect of the evaporation of the 'arsenic and phosphorus. An improved
method has been suggested (Ref.66) based on the independent reg-.Uating of
the vapor pressures of the volatile component. Fig.8 shows the method of
the zonal recrystallization, successfully used by the author for purifying
gallium arsenide. In Ref.67, the method of zonal recrystallization without
crucible in a sealed vessel is described. Several other methods of synthe-
sizing binary semiconductors of the diamond group are mentioned, where the
purification of the material can be accomplished by purifying the initial
components. These methods have only a limited significance (Ref.15, 70).
The mechanical processing of the obtained compounds is similar to that of
silicon and Get the samples can be sawed, polished and ground. Precautions
Card 6/ 24

2o616
The Chemistry of Diamond-Like Semiconductors S106 60/005/005/005/021
A051YA029
must be taken against.duat-like particles by using protective glasses,
plexiglas hoods and rubber gloves. The author mentions the many works pub-
lished on the electrical properties of the AIIIBV type semiconductors and
outlines the special demands placed on these from the electrical standpoint:
the width of the forbidden zone, distributiont concentration and degree of
ionization of the admixtures, the value of the effective masses, mobility of
the charge carriers, life-span of the electron-hole pairs and diffusion
length of the.shift, nature and-activity of the centers of capture and re-
combination (Ref. 76). The AIIIBV type of semiconductors present an interest-
ing material for use as rectifiers, photocells, Hall emf trazismitters, etc.
Certain compounds of the mentioned type can be successfully used in thermo-
electrical generators (Ref-77). The work of most semiconductor instruments
is ensured through the admixture mechanism of conductivity. The role of the
admixtures can be played not only by the foreign atoms, but also by atoms
included in the composition of compounds with a super-stoichiometric ratio
and destruction of the crystal lattice. The principle of action of the
"ideal" semiconductor of the diamond type is simple, based on the action of
the foreign admixtures introduced by the replacement mechanism. If the atom
has a valency greater than the atom of the main lattice, then the extra
Card 7/24

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The Chemistry of Diamond-Like Semiconductors S/06 60/005/005/005/021
A051 YA029
valeney"eleotron of the atom can take part in the transfer of electricity,
fortaing an electronic conductivity of the substance. In studying the activ-
ity of admixtures in the AIIIBV compounds, a certain analogy with the be-
havior of admixtures in Ge and Bi was noted (Ref,31, 78-82). In binary
semiconductors of the AIIIBV type elements of the second group (zific, cad-
mium) usually act as acceptors# forming a hole conductivity, and elements of
the fourth group (sulfur, selenium, tellurium) act as donors, determining
the electronic conductivity. The physical basis for the use of most semi-
conductors of this group are the electronic processes which occur in this
transition range. Indium antimonide brought to a state of super-purity is
used as an "ideal" semiconductor today-for the quantitative check of the
theory and the-production of numerous electronic semiconductor instruments.
The characteristic feature of these compounds is the high mobility of the
electrons, the relatively low mobility of the holes and the low effective
mass of the charge carriers. These features are the cause of certain pre-
viously unknown phenomena in the AIIIBV type compounds, such as anomaly of
the optical absorption (Ref.83), a weak dependence of the Hall effect and
electroconductivity on the temperature in the region of low temperatures
(Ref.8jj), negative change cf the resistance in a magnetic field (Ref.85),
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The Chemistry of Diamond-Like Semiconductors S/063J60/005/005/005/021
A051/AO29
etc. The actual application of the Hall effect in instruments became poa-
sible with the discovery of semiconductors having a very high mobility of
the electrons. Indium, antimonide and indium arsenide are the substances
with the greatest future as materials to be used in infra-red detectors, and
indium, phosphide as a material for rectifiers and amplifiers (Ref.75)- Gal-
lium arsenide shows the greatest promise as a material for solar batteries,
more so than silicon (Ref.B8,89). Gallium arsenide and alluminum antimonide
will be used for rectifiers (Ref-571,11) Table 4 shows the main electrical
properties of the compounds of the . B# type according to Ref-74, 75, 90.
Gallium phosphide is very suitable for rectifiers working at high tempera-
tures. Boron compounds are expected to have the same advantages compared to
silicon carbide, as gallium arsenide has by comparison to Ge. As regards
the type of chemical bond in the orystallo-chemical diamond group, the author
notes the following two main ruless a) in the analogue compound series,
b) in the isoelectron series. In the first case with an increase in the
atomic weight within the same group of the periodic system, the bond type
should change toward the direction of strengthening the "metallization". In
the second case the change in the bond type should be connected with an in-
crease in the distance between the elements in the periodic table, which
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The Chemistry of Diamond-Like Semiconductors I'S/063/60/005/005/005/021
A051AO29
compose the substances, or, i.e., with an increase in the difference of the
chemical nature of the atoms. Table 5 lists some of the physico-chemical
and electrical characteristics of the substances of the isoelectronic series
of germanium and gray tin (Ref-74, 16).- From the table it is seen that an
intensification of the ionic state'causes a drop in the hardness desoribed
by Goldschmidt (Ref.13). This was noted as a weakening of the inter-par-
ticle bond. The melting temperature in the isoelectronic series changes in
a complex wa , explained by the fact that the melting of the LIV substances,
of the AIIM and the AIIIVI compounds-are processes which are not analo-
gous, i.e., the degree of destruction of the bonds and their transformation
into another shape is different for these substances. The direct proof of
the presence of ions in the compounds of the AIII.BV and AIIBVI types is
taken to be the determination of cleavage. The presence of ionic and cova-
lent bonds in the substances of the AIIIBV type was proven by a number of
other methods given in Ref,95, 96. The observed rules in the change of the
properties concomitant with a change in the bond type in a number of ana-.
logue compounds and in the iso-electronic series have served as the basis for
reliably determining the properties of the substances which are still only
slightly investigated. The compounds of the AIIIBV type are the closest
^ard 10/ 24

06
The Chemistry of Diamond-Like Semiconductors 8/06 60/0,00005/005/1021
A051YA029
analogues to diamonds, silicon, germanium and gray tin, amongst all the
members of the crystallo-ohemical group. Several references are mentioned
whi'ch deal with the investigations of several solid solutions, formed by si-
licon and germanium (Ref.97), and the teofinologioal developments of materials
suitable for use in instruments (Ref.100). It has been assumed that the
analogy of the AIIIBV compounds and the elements of the fourth group is ex-
tended to the nature of their interaction as well, Thus, investigations
we're carried out of pseudo-binary sections of the ternary systems of the
InSb-GaSb, InAs-GaAs types, etc. All the investigated compounds of the
AIIIBV type, when reacting with each other, have shown a certain solubility.
The interaction with the formation of continuous solid substitution solu-
tions was particularly easy in the systems InP-InAs and GaP-GaAs. Fig.10-12
are a few other structural diagrams investigated. The difficulties eneoun-
tered by the diffusion of the solid solutions in substances with a covalent
bond were connected with the direction of the covalent bond, presenting ad-
ditional limitations on the mutual distribution of the atoms and serving as
an obstacle to diffusion (Ref.16). All the diagrams shown in Fig.10-12 were
taken after the homogenization of the alloys in the solid state. The re-
sult8 of the thermal analysis of the indicated ternary systems serve as an
example of the usefulness of the physico-chemical analysis in semi-conductors.
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A051/AO29
An interesting property of the solid solutions based on AM is their stab-
ility to oxygen and air moisture exceeding that of aluminum antimonide,(Ref.
105,106). It has been shown.that a considerable increase in the effective-
ness of thermo-elements can b attained if materials are usedp which are
based on multi-oomponent solid solutions, since the latter have a lesser
thermal conductivity compared to compounds included in their composition.
Some data available point to the application of the solid solutions of the
InAs-InP system for this purpose. With respect to ne* types of semicondud-
torsthe author mentions also the defective binary compounds of the AIIIBVI
type discovered in 1949 (Ref.'117). Their structure is defective with 2 re3
spect to the metal atoms. In their electrical properties they were found to
be semiconductors with properties which are intermediary compared to the
properties of the compounds of the AIIIBV and A.LIBVI types (Ilef.116,119).
However, the mobility of the charge carriers in these new substances was
found to be very low. Some of the compounds of this type form solid substi-
tution solutions with one another,as well as by the interaction with sub-
stances of the AIIIBV type (Ref.118, 124-130). The defective compounds of
the AIIIBVI type, when interacting with substances of the AIIBVI type, form-
2
ed homogeaous semiconductor substances, chemical compounds and solid substi-
tution solutions (Ref.134-135). It is assumed that in all semiconductor
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The Chemistry of Diamond-Like Semiconductors S/063/60/005/005/005/021
A051/AO29
III VI
alloys based on defective compounds of the A2 B 3 type and in the investi-
gated ones, the mobility will be only slight due,to the statistical distrib-,
ution of the empty places in the lattice. Non-defeative ternary compounds
with diamond-like structures are of greater interest in tho search for new
combinations of properties close to that of germanium and silicon. It is
further assumed that the binary and ternary compounds represent all the pos-
sibilities of chemical compounds with a diamond-like structure. The author
points out.in conclusion that the number of possible mater- 'als with semi-
conductor properties,which are analogues of diamond, is continuously in-
creasing since the possibilities are unlimited for their production and that
they are not limited only to the chemical-crystalline group of diamond-like
semiconductors. There are 5 tables 12 figures, 1 diagram and 149 references:
86 are Soviet, 36 are English, 22 GeIrman, 2 Czech, 1 Dutch, 2 unidentified.
Card 13/24

-GQH-VWQU,-~~
Bond typd and propertieo of the oemiconductor crystallochemical group
diamond - zino blende - wwtzite. Probl. kin. i kat. 10:96-101 160.
(MIRA 14-- 5)
la Fiziko-tekhnicheskiy institut AN SSISR.
(Diamond) (Sphalerite) (Wurtzite)

82563
S/080/60/033/06/04/006
o
AUTHORSi Goryunova, N'. A., Kradinova, L. V., Sokolova, V. I., Sokolov&, Ye.V.
TITLE: A Method of Obtaining High-Purity Arsenic 1A
PERIODICAL: Zhurnal prikladnoy khimii, 1960, Vol-. 33, No. 6, pp. 1409-1410
.TEXT: Gallium arsenide GaAs Is a semiconductor material with a recti-
fying effect and photoconductivity. Arsenio Is usually accompanied by antimony
and bismuth which have similar physical and chemical properties, so that their
separation from arsenic is difficult. Arsenic trioxide was taken as initial
material, therefore, because It does not contain bismuth and only small
quantities of Sb, Cu, Al, Ca, Fe, Si and Mn. The purification was carried out
in two stages: purification of arsenic trioxide; reduction of the trioxide to
arsenic metal. The trioxide was purified by recrystallization. from a hydro-
chloric solution. After complete dissolution of As2ol the hot solution was
filtered and then kept for 20-24 hours in a cold plaag. The crystals formed
were reduced by aclivated coal in a quartz ampoule. -The arsenic metal was
distilled in a 10- mm Hg vacuum. At 300 0C the fraction containing As 0 and
at.4500C pure arsenic was distilled. On the base of arsenic produced 2~; the
method proposed, GaAs can be obtained with a concentration of charge carriers
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82563
A Method of Obtaining High-Purity Arsenic S/080/60/033/06/04/006
16- -3
n _J10 cm . Further treatment by zone melting and extraction of single
crystals produces a material-suitable for the application as semiconductor.
There is 1 table and 7 referencest 2 Soviet, 3 German, 1 English and 1 French.
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AN SSSR (Leningrad
Physico-Technical Institute of AS UN
SM41=: June 25, 1958
.February 4, 1960 (after revision)
Card 2/2

GORYUNOVA N.A,
Some probleso involved in the formation of complex tetrahedral phaosoo
Vest.LGU '16 no,10,:112-224 1610 (MICA 1425)
(seld6o,nductors) (Germanium compounis)
I
I

GORY~UNOVA, 1J..A.; ORLOVA, G.M.; DANILOV, A.V.; ABRAMOVA, A.V.; PLECHKO, R.L.;
S
S
ome quaternar7-analogs of germanium. Veat LOU 16 no-22:97-101
,61. (MIRA 14:11)
(Germanium alloys) (Semiconductors)

s/o8i/62/000/011/007/057
Elll/E152
AUTAORS; Goryupova, .N.A., Vaypolin, A.A., and Chiang--ping-hai
TITLE: So-lubility of germanium in some ternary compounds
with a tetrahedral structure
PERIODICAL; Referativnyy zhurfial, Khimiya, no.11, 1962,31,
abstract 11 B 292. (In the Symposium: 'Fizika i
khimiyal ('Physics and Chemistry'), L., 196l, 26-29)
TEXT: Using the X-ray structural method the solution of Ge
in CuGe2P3 (I), which has a tetrahedral arrangement of atoms, was
studied. It was shown that in I the most probable disordered
arrangement of atoms of Cu and Go is in positions similar to those
of the 'Metal in the sphalerite structure, and of P atoms in
positions of the non-metal in the same structure. When solid
solutions were formed in alloys of the homogeneous range from the
composition of I to that of the alloy with the composition
70 mol ',V/ I the X-ray patterns showed one system of shard lines IL
corresppnding to the structure of ZnS. The period of identity
varied from a 5.38 kX for I to 5.48 kX for the alloy with the
Card 1/2

Solubility of germanium in some ... S/081/62/000/011/007/057
EIII/E152
limiting concentration. ' When Ge dissolves in I its atoms
occupy both "cationict, and "anionic(' positions.
[Abstractor's note: Codplete translation.]
40,
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o
34708
S/137/62/000/002/053/14-
A0061AI01
AUTHOR: Goryunova, N. A
TITLE: Semi-conductor AIIIBV type compounds and the nature of their inter-
action with other substances
PERIODICAL: Referativnyy zhurnal, Metallurgiya, no. 2, 1962, 36-37, abstract
2G289 (V sb. "Vopr. metallurgii i fiz. poluprovodnikov", Moscow,
AN SSSR, 1961, 123-126)
=1: The author ana es the problem on the formation of compounds or
solid solutions between A, B type compounds and other compounds. Alloys of
terna7jyst.evs of the following types"were studied: AjIII - B2111 - BY and
AM , - 2. It was assumed that in these systems interaction takes place V.'r
-together with the for -binary sections
m Jqn of solid solutions over pseudo
mg III V III V
A1 - A2 B and A A B2 ' Experimental data accumulated show that
in this case there are regions of solid solution formation which are more or
less extended over the pseudo-binary section (depending on the proximity of
substitution components), and always very narrow in respect to excessive ele-
mentary components. Data on the formation of solid solutions between AIII&I
Card 1/2

I S/137/62/000,'002/053/144
Semi-conductor AI' BY type compounds ... A006/A101
compounds indicate that this process is not uniform in different systems. The
difficult formation of solid solutions which can be considered as a common
phenomenon for the AIIIBY - AIIIBV systems is apparently connected with the fact
that in. substances with a covalent bond type, diffusion in solid state proceeds
at mach lesser speeds than in alloys with another type of electronic interaction.V)~
It was established that in AII19 - AIIIBV systems, in the majority of cases,
the zone of homogeneous alloys corresponds actually to the pseudo-binary sections~
The author investigated also the interaction of AIIIe with AIIIBYI type com-
pounds. It was establibhed that the formation of solid solutqons 31n the system
with the participation of antimonides proceeds in a relatively narrow concentra-
tion range. Solid solutions are developed also in a wide concentration range at
an interaction of,A'TII9 with the A1BIVCY type c'othpounds. A new compound,
7.IlGeAsSe, was obtained with the ZnS s~ruhure; 5.53 R identity pericd, 6580C
melting point, and about 560 kg/mm2 microbardness.
B. Golovin
[Abstracter's note: Complete translation]
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30866
S/054/61/000/004/007/009
At 7 3 oafill r31 & 0,, At's-4) B102/B138
AUTHORS: Gor ungyA, N. A., Orlova, G. M., Danilov, A. V., Abramova,
--K-.V., Plechko, R. L., Kozhina, I. I.
TITLE: Some quaternary analogs of germanium
PERIODICAL: Leningrad. Universitet. Vestnik. Seriya fiziki i khimii,
no. 4, 1961, 97 - 101
itra-
TEXTi Of the possible quaternary analogs of germanium which form tE
hedral phases, only the system ZnSe-GaAs has so far been investigated.
The authors chose the system Cu-Ge-As-Se which has a tetrahedral phase
of variable composition in the section Cu 2GeSe 3- CuGe2As 3" The presence of
this -phase was verified and the physical and chemical properties of the
phases were studied. 17 alloys from the above section were synthesized
by fusion of the components in evacuated quartz ampoules at 750 0C.
Microstructure of the alloys was determined by means of anfl"M-'! (MIM-7)
microscope and microhardness with anMT-3 (PMT-3) tester. Thermographic
analyses were carried out with normal as well as differential recording.
X-ray structural analyses showed that the alloys ranging from 2.0
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30866
5/054/61/000/004/007/009
Some quaternary 4nalogs of... B102 B138
CU2GeSe 3* CuGe2As3to 4.0 Cu2 GeSe 3* CuGe2As3were single-phase. rhe
composition 1.5 Cu2GeSe 3* CuGe2 As3contained two phases and
CU2GeSe *0-4 CuGe As 3 three. The inhomogeneity increased with the As
concen4ation of Ge composition. All alloys contained a sphalerite-type
structure with lattice constant a = 5.54 � 0.01 U. A composition
m:n = 1.6:1.0 - 4-0:1.0 gave single-phase alloys; (m - Cu2GeSe,9
n = CuGe Se,), m:n - I.,Ot2.O; 3X; 4.0 contained an additional phase with
2 3
a = 5.20 t 0.01 kX; m:n - 5-011.0; 4-5:1.0; 1-5%1~0; 1~2%1.0; 1.0%1~0
contained, apart from the common one, another sphaleritic phase with
a = 4.41 1 0.01 M. The second ZnS-type phase was separated bj zone
melting of Cu 2GeSe 3* CuGe 2As3with an optimum rate of 6.5 - 1.5 cm/hr and
7 - 10 cycles. In the transition from the ternary Cu 2GeSe 3 to the
quaternary As-containingf system, from 83.3 mole% m + 16.7 mole% n the
distorted chalcopyrite lattice is rearranged into the regular ZnS lattice,
Lattice parameter and microhardness are not sensitive to composition.
The homogeneous region of composition ranges from Cu 5Ge4 As3Se6 to
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30866
S/054/61/000/004/007/009
Some quatecmary analogs of... B102/B138
Cu9Ge6As3Se12' These materials might give a new combination of semicon-
ductor parameters. There are 1 figure, 5 tables, and 10 references:
7 Soviet and 3 non-Soviet. The two references to English-language
publications read as follows: C. H. L. Goodman. Nature 1799 8269 1957;
J. Phys. and Chem. Solids, 6, 36, 1958.
Card 3/3

KOZHINA, I.L; TOLKAGIIEV; SIS.; BORSHCHEVSKIY, A.S.; GOIRYUNOVA; N.A-
Study of the caAs - Ga2S3 system. Vest.LGU 17 no.4:122-IV 162.
(MMA 15 9 3)
(Gallium arsenide)(Gallium sulfide)

S/137/6 1/000/t 1OA20flO%
A006/A101
g~o~v&N.~A., Averkiyeva, G.K., Sharavakiy, PS., Tovpentsev,
YUX
TITLE: Investigation of quaternary alloys based on indium antimonide and
cadmium telluride
Referativnyy zhurnal. Metallurgiya, no. 10.' 1961, 44, abstract
IOG* (V ab. "Fizika i khimiya!', TAningrad, 1961, 22 25)
TM-P: The authors present brief information on investigating &,pseudo,
binary section CdTe-InSb of the quaternary Cd-Ts-1n-Sb system. The.Alloys'in-
Vestigated were prepared by direat fusion of the initial matorials in *vacuato&
quartz,ampoules and were subjected to,metallographical analysis. Simultaneous-
ly-mipfahardness was determined. It was establishe& that ih-the-range of 95--,
100% In& ooneentration there is a homogene6us area with ZnS structure. In-tho-
other points of the system two phases were revealed whose microhardness exos*ds
that. of the initial components - CdTe and In-3b.
A. Nashelskiy
(Abs'traoter's note: Complete translation]
Card

GORYUNOVA, N,.A.j VOYTSEKHOVSKIT, A.V.; PROCHUKUN, V.D.
Possibility of forming so;Lid solutions in some four-component systems,
Vest.WU9 no.10:156-158 16L (MIU 24:5)
(Solutions, Solid)
/I

S/054/62/000/001/008/011
B121/B138
AUTHORS: Kozhina, I. I., Tolkachev, S. S., Borshchevskiy, A. S.p
GZ A.
&&cva.L 11.
TITLE: Examination of the system GaAs - Ga S
2 3
PERIODICAL: Leningrad. Universitet. Vestnik. Seriya fiziki i khimil',
no.1, 1962, ;122-1471
TEXT: To study the interactions thoroughly, the intermediate stages were
examined by X-ray, thermal, and microstructural analyses. The alloys were
produced by direct fusion of gallium, arsenic) and sulfur in evacuated
quartz ampoules between 1280 and 115000C. Homogenization of the alloys was
reached by annealing the samples ai 9000C in evacuated quartz ampoules in-
aTfl-3 (TG-3) crucible furnace. X-ray structural analyses viere conducted
in a PnK-2 (RPK-2) chamber 57.3 mm in diameter by the asymmetrical method.:
The microhardness of the alloys was determined with anMT-3 (FLIT-3) device,
AndiflK-55 (FPK-55) device was used for differential thermal analysis.
Altogether 17 alloys of varying compositions were studied in the section
Ga3As 3 - Ga,S3 Their coloring changed from gray with a rietallic luster
Card 1/ 2

S/07o/62/007/OOG/004/020
E073/1035
AUMORS: Ozolin'sh, G.V., Avorkiyeva, G.K., Iyevin'sh, A.F.
and Goryunova, N.A.
3 3- type.
TITLE: X-f~-iy ~diffractioji investigations of some A B
compounds with cotapositions deviating from the
stoichionietric
PERIODICAL: Kristallografiya, v. 7, no. 6, 1962, 650 - 653
T EXT ; The aim of the investigations was to determine the
width of the concentration range in which indiuni and gallium
arseni-de,' made from 99.98% purity materials, remained homagencous.
The specimens were synthesised in evxcuat*ed quartz ampliles with the
slow h-eating t '50 OG f or ; 11;
following sequence of oper&tions: o 0
holding at this temper&ture -for 21 houis; slow heating to 100 C
above the fusion teirtper&ture of the compound and holding for
30 min; cooling together with the furnace for 12 - III hours.
Specimens of stoichiotactric and non-stoichiometric coutpositiori
were synthesised. The substance was broken-up into powder prior
to t'ahing the X-i~ay diffr~A-ction pictures and annealvd in evacuated
quartz ampules for 5 hours,at 350 0C. Results: within the errors
Card 1/2 1

S/07o/62/007/Oo6/oo4/o2o
'X-ray diffraction r,075/E335
the lat
of determination (0.0001 'A tice spacin~s did riot depend
oil the Lxcojs Of one or other comuound writh respect to stoi-
chionietry!, Without corri~c~ing for rciractioi,,thc followin- valttes
,were obtain~ed.for +25 OC:,
lilAs:a it 6:05838 + 0 00005 A
GaAs: a zt 5 65315 T 0 00010
-The-rc are+2'tables.
ASSOCIATION: Institut Ithimi AN LatvSSR (Institute of Chemistry
of the AS Latvian SSR)
Fiziko-teRhnichcs1Uy institUt AN 5.55R (Pliysico-
technical Institute of the AS USSR)
SUBMITT ED: D cc cmb cr 8', ~1961
2
Card 2/

34753
S/020/62/142/003/020/027
Lh 7 7 0 0 (161t'3 11 B101/B110
AUTHORS: Goryunova, N. A., Mamayev, S., and Prochukhan, V. D.
TITLE: Some properties of the semiconductor CdSnA9 2, an electronic
analog of indium arsenide
PERIODICAL: Akademiya nauk SSSR. Doklady, v. 142, no. 3, 1962, 623-626
TEXT: On the basis of data for the width of the forbidden band and the
microhardness it was concluded that the chemical bond was more covalent
in CdSnAs2 than in InAs (InAs:AE = 0.45 ev, H = 330 kg/MM2; CdSnAs 2 :16E
= 0.26 ev, 11 = 395 kg/MM 2) . Hence follows a higher mobility of current
carriers in CdSnAs 2 as compared with InAs. An improved method of
synthesizing CdSnAs 2 was vced to prove these assumptions. I Abstracter's
note: Method not stated.] The authore obtained monolithic, polycrystalline
specimens (grain size: a few millimeters) as well as single crystals
(a few centimeters long) of a cross section of- 0.25 cm 2. Their
homogeneity was confirmed by the constant microhardness and electrical
conductivity, as well as by the Debye-Scherrer patterns, the homogeneous
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S/020/62/142/003/020/027
Some properties of the semiconductor... B101 B110
structure of single crystals was confirmed by Laue diffraction patterns.
The melting point was 615 OC. The Hall effect R (at 6700 oersteds) and
the electrical conductivity a were measured between 77 and 840 0K. The
followin 9 was found: (1) a is independent of temperature in the range of
77 - 280 K. With increasing temperature, a passes a minimum and then
rises, following an exponential function. The minimum for an inhomog8neo"s
polycrystal (A) was at 5500K, for a omonolithic polycrystal (B) at 370 K9
and for a single crystal (C) at 365 K. (2) At room temperature, cr was
2.5-10 2 ohm- 1. cm-1for A, 3.4-10 2 for B, ~nd 4.1 - 3.1'10 2 for C. (3)
The mobility n of current carriern (n - 110) was (in cm2/v.sec): 1000 for
A, 5800 for B, and 18,000 - 22,000 for C. (4) The sign of Hall coefficient
and thermo-emf sho wed electronic conductivity for all specimens. (5)
Accordingly, the compound CdSnAs 2 is a semiconductor with higher n values
than in any known ternary compound; the n values are even a little
higher than for InAs. The n value for CdSnAs 2 is reJuced by impurities;
it can be elevated by improved purification. CdSn,'~s 2 offers Eood-
prospects for practical use as semiconductor. D. IN. ",asledov is thanked
Card 2/3

3/020/62/142/003/020/027
Some properties of the semiconductor... B101/B110
for a discussion. There are 3 figures, 2 tables, and 6 references: 2
Soviet and 4 non-Soviet. The three references to English-language
publications read as follows: C. H. L. Goodman, Nature, 179, 828 (1957);
A. J. Strauss, A. J. Rosenberg, J. Phys. Chem., Sol., 17, 289 (1961); H.
Pfister, Acta Crystallogr., 11, 221 (1958).
ASSOCTATTON. Fiziko-tekhnicheskiy institut im. A. F. Ioffe Akalemii nauk
SSSR (Physicotechnical Institute imeni A. F. Ioffe of the
Academy of Sciences USSR)
PRESENTED: September 2, 1961, by A. N. Frumkin, Academician
SUBMITTED: September 30, 1961
Card 3/3

S/137/62/000/01-1/019/045
A052/A101
AUTHORS- Lroryunova, N. A., Grigortyeva, V. S.. Sharavskly, P. V.
esnach.
TITLE- Solid oolittions, In the InAs-HgTe system
PERIODICAL: Referativnyy zhurnal, Metallurgiya, no. 11, 1962, U - J8,
abstract 111132 (In collection: "Fizika". Leningrad, 1962, 7 10)
TEXT: The possibility of the solid solution formation according to the
type of heterovalence substitution on the base of semiconducting'compounds InAs
and HgTe was studied. The boundaries of the phase homogeneity were determined.
9 alloys of the quasibinary cross section of InA6-11gT6 were investigated in
intervals of 1%, by composition. The alloys were prepared from 99.W% pure Ini.- 0
tial material fused in.evacuated quartz ampoules, diffusion-azinealedat 576 - 6W_1
C during 550 - 600 hours and Investigated microscopically and partly by means of
thermal and X-ray analyses and by measuring microhardness. In the InAs-HgTe
systeR formation-of a continuous series of solid solutions was established In a
wide concentration range with a Zn-blende structure and a lattice parameter vary-
ing by linear law in transition from InAs (a=6.0)1 kX). to HgTe (a.-6.46 kx),
Qard 1/2

5olld solutions In the InAs-HgTe system
There are 12 references.
rAbstracteris note: Complete translation]
S/ 13-1/62/000/011/019/045
A052/A1O1
Z. Rogachovskaya
Card 2/2

GOIM-OVA, Nina Aleksandrovna; PIASTRO, V.D., red.; YELIZAROVA,
(Adamantine semiconductor chemistry] Khimlia almazopod6b-
nykh poluprovodnikov. Leningrad, Izd-vo Leningr. univ.,,
1963. 221 p. (Semiconductors) (MIRA 16:6)

S1 137/62/000/011/917/045
A05P/A101
AUVORS: Goryunova, N. A., Takhtareva, N. K.
TITLE: Colid solution formation between indium antimonide and arsenide
etallurglya, no. 11, 1962, 17,
PERIODICAL: Referativnyy zhurnal, 1.1
abstract 111130,(Izv. AN rPoldSSR", no. io (88), 1061, 89
0
TEXT: InAs-InSb alloys after hardening from a fused state (W50 11100 C)
in an aqueous NaCI 3ulution were'annealed at 540 - 5700C depending on the com-....
position during 300, 550 and 706 hours. Conclusions are drawn on the existence
of solid solutions In the whole range of concentrations and on an easier solubi-,
lity of InSb in InAs.
V. Srednegorska
[Abstracter's note: Complete translationi
Card 1/1

Physico-chemical properties and structure of monocrystal I ine sa.-1;>1as
of ZnSIA52. A. A. Vaypolin, N. A. Goryunova, E. 0. 0snanov-
Investigation of macrocrystal line ZnSiP2- N. A.
Vaypolin, Yu. V. Rud'.
Some properties and zone structure of the ternary ccxipound CdG4As2-
y 0. Osmanov.
F. M. Gashimzade, 'N. yqaq~ q,,
Electrical properties of monocrystalline samples of ZnSnAs2. N. A.
Coryunova, F. P. Kesamanly, 0. N. Nas)adov, Yu. V. Rud'.
investigation of, properties of ZnGe?2 and CdGeP2. N. A. Goryunova,
N. K. Takhtareval,'.I. 1. Tychina.
On the question of the existence of homogeneous many-component tetr'a-
he4ral phases. G. K. Aborklyeva, A. A. Vaynol in, ~. ~Gorwnova-
X-Ray investigation of certain ccnpounds of the type A 115IVC2V1
A. 1".. Vzynal in, 17. 0. Yu. V. R"111 Tychina,
F . I
. . Lindir-, .',;, A. Goryunova A. F yev.. h.
A

n
vt;stigaEion of the system germanium-sulfur and Serman-un.-selenium.
A. S. Pashinkin, Lyu-Tsun'-Khua, A. V. Novoselova (10 minutes).
(Not presented).]
nerm. odynazi-c investigation of alloys of the systam Sailium-antimony
L. N. Gerasimenko, N. 1. V. Kirichanko, L. X. Lozhk.in,,
A. G. Morachevskiy 10 minutes
.Report presentod at thp 3rd Nationai Conference on Semiconductor Compoupds,
Kishinev, 16-21 Sept 1963

-(4)/EWT
TO t viw
.Q
WFTC
(P) e~7!- APIA
ACMSION M: .03003914 8101811631005100712031/2032
AVMOR: GOVWW~Vag ff. A. Kevamgg~j�, F. NJ 00=9zov, E. 0-(t
71
TITLE: Preparation and certain propeitiis of sinsLe-cwtax Opealmens Of CAqSA12
SOME: ftiaka tvardogo tolep Y. 5., no. 7,. 19630 20,7,1-2032
prope ies,
TOPIC TAGA: CdGeAs2, single crystals physical properties,, meehanleal rt
electrical prop Iertie.a, carriers, electrons, holes, mobility of carriers,, effec-
tive mass of electrons
ABSMCT.- nnglevcrystal a Imens of- MeAegleve been prepared *wr an Unidenti-
fied method., and their properties have been otudled. The compound,has the strut-
ture of cbelco b - Ia. 2ITL-1 it, and
Wite with the -parameters a. - 5.9427
c/a - 1.8875 Ao allt O,OW5 A.: it melts at 665C and has a m1croboxftess of
47:1 + 10 kp;/mm2~ The forbidden mergy gap at 3WK Is 0,55 ev. Electrical
meas7urementa were carried out ~dth V=13elel#edal specimens (I x 3 x 10 lov-
resistance - contacts were readithd by Indlin -clectrodes. The Hall mobilities. of
a carrier density of 1017 Cd-3. at rQ*M teM-
perature wore.20 to-25--and
power of a.j1 n-type sample at M wau~ 190 Ily/dego The baximm possible value. of
Cdrd 1/2

CORYUNOVAt N.A.; SOKOLOVA,,.V.I.,- TSZYAN BIN-SI (Chiang Ping-hsi]
Dissolution of germanium in some ternary semiconducting.--.
compouncls.-DoU.-AN.SSSR 152--no.21363-366 3 163.
(MIRA 16M)
1. Fizikc)-i-tekhnicheakiy institut, im. A.F. Ioffe AN SSSR.
Predstavleno.akademikom B.P. Konstantinovym.