JPRS ID: 9175 WORLDWIDE REPORT NARCOTICS AND DANGEROUS DRUGS

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• Original Classification: U
• Document Page Count: 23
• Document Creation Date: November 1, 2016
• Sequence Number: 5
• Content Type: REPORTS

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2 APR I L 1980 t FOUO 6r8~ ) 1 OF 1
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JPRS L/9012
2 April 1980
IJSSR Re ort
p
ELECTRONICS AND ELECTRICAL ENGINEERING
CFOUO 6/80)
~B~$ FOaEIGN BROADCAST INFORMATION SERVICE
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NOTE
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are transcribed or revrinted, with the original phrasing and
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JPRS L/9012
2 April 1980
- USSR REPORT
~ ELECTRONICS AND ELECTRICAL ENGINEERI~IG
~ (FOUO 6/80)
This serial publication contains articles, abstracts of articles and news
items from USSR scientific and technical journals on the specific subjects -
~ reflected in the table of contents.
Photoduplications of foreign-language sources may be obtained from the
Photoduplication Service, Library of Congress, Washington, D. C. 20540.
Requests should provide adequate i~entification both as to the source and
the individual article(s) desired.
~ -
CONTE~ITS PAGE -
PUBL ICATIONS
Guide to Semiconduct:or Diode~ -
- (Boris Aleksandrovich Borodin, et al.; SPRAVOCHNIK
PO POLUPROVODNIKOVYM DIODAM, 1979) 1
_ High-Regularity Radio-Frequency Cable
(Nelli Ivanovna Dorezyuk, Mikhail Fedorovich Popov;
RADIOCHASTOTNYYE KABELI VYSOKOY REGULYARNOSTI, 1979). 5
Ion Etch;ng of Microstructures
(Boris Stepanovich Danilin, Valeriy Yurevich Kireyev;
IONNOYE TRAVLENIYE MIKROSTRUKTUR, 1979) 7
Radiation Effects in Semiconductors
(L. S. Smirn~v; RADIATSIONNYYE EFFEKTY V
POLUPROVODNIKAKH, 1979) 9
Reception of Sigrials With Evaluation of Their Qua.lity
� (Vyacheslav Petrovich Shuvalov; PRIYEM SIGNALOV S
OTSENKOY IKH KACHESTVA, 1979) 11
- a- [III - U5SR - 21E S&T FOUO] `
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CONTENTS (Continued) PaBe
Screening of Microwave Structures
(Yevgeniy Aleksandrovich Vorob'yev; EKR.ANIROVANIYE
SVCH KONSTRUKTSIY, 1979) 15 -
~ Superlong-Distance Propagation of Short Radio Waves
(Aleksandr Viktorovich Gurevich, Yelena _
Yevgen'yevna Tsedilina; SVERKHDAL'NEYE
RASPROSTRANENIYE KOROTICIKH RADIOVOLN, 1979)....... 17
- - b -
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PUBLICATIONS
GUIDE TO SEMICONDUCTOR DIODES
Moscow SPRAVOCHNIK PO POLUPROVUDNIKOVYM DIODAM (Guide to Semiconductor
Diodes) in Russian 1979 signed to press 5 Oct 79 pp 2, 431-432 -
[Annotation and table of contents from book by Boris Aleksandrovich Borodin,
Vyacheslav Mikhaylovich Dronevich, Rimma Vasil'yevna Yegorova, Artem
Stenanovich Kozyrev and Iosif Fedorovich Nikolayevskiy, editors, Izdatel'stv~
Svyaz', 47,000 copies, 432 pagesJ
[Text] This volume examines a wide variety of commercially-manufactured
diodes, encompassing all areas of diode utilization. Volt-ampere
characteristics are given for all types of diodes, as well as parameters,
their physical significance, as well as recommendations on utilization.
This manual is intended for engineer-technician personnel and can be _
useful to undergraduates and gradu~ate students at radio engineering '
_ schools.
CONTENTS Page
Introduction 3
I. ~perati.ng Principles and Parameters of Diodes 6
II. Rectifier Diodes 35
D7A-D7Zh 35
_ KD102A, KD102B 39
KD103A, KD103B 43
KD104A 47 -
KD105B-'~.D105G 49
GD107A, GD107B 53
AD110A 55
KD202A-KD202S 58
KD203A-KD203D 62
KD204A-KD204V 66
KD205A-KD205L
D206-D211 73
KD20b.A-KD206 V 76
ICD208A 78 -
KD209A-KD209V 81
KD210A-KD210G 86
MD217, MD218 90
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= D226A-D226D 9~
D229V-D229L 94
n242-n248, n242A-n248A, D242B-D248a 98
III. Rectif.ier Piles and Units 100
KTs106A-KTs106D 100
104
K'1'y201A-KTa201Ye t10
h~c~aotn-K~rs4olu
KTs402A-K':s402I, KTs403A-KTs4031, KTs404A-KTs4041, KTs405A-
KTs405I 115
KTs407A 118
D1006A, D1007A, D1008A 121
D1009, D1009A, D1010, D1010A, D1011, DlO11A . 125
IV. riultipurpose Diodes 132
D2B-D2I 132
D9B-D9L 134
D219A, D220, D220A, D220B 139
GD402A, GD402B 142
V. Pulse Diodes 145
D18, D20 145
D310 148
D311, D311A 150
D312, D312~i 154
KD503A, KD503B 15E
KD504A 163 -
GD507A io5
cn508A, cn508B 168
KD509A, KDS10A 173
- CDS11A-GD511V 176
KD512A 178
KD513A 180
KD518A 184
KD520A 187
�KD521A-KD521V i90 -
KD522A, KD522B 194
- VI. Diode Assemblies and Matrices 197
RDS111A-KDS111V 197
KDS413A-KDS413V, KDS414A-KDS414V, KDS415A-KDS415V 23~
~ KDS523A-KDS523G 206
KDS525A-KDS525L 209
KDS526A-KDS526V 212 -
KD901A-KD901G 214
KD903A, KD903B 216 `
KD904A-KD904Ye 219
KD906A-KD906Ye 222
_ KD907B, KD907G 224
KD908A 226
KD910A-KD910V 228
KD911A, KD911B 231
KD913A 233
KD914A-KD914V
2
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KD917A 23~
KD918B, KD918C 239 _
KD919/1 , 241
VII. Stabistors and Stabilitrons 245
- KS107A 245
KS133A, KS139A, KS147A, KS156A, KS168A 24~
KS162A, KS163V, KS170A, KS182A, KS191A, KS210B, KS213B 251
ICS191M-KS191R 260
KS191S-KS191F 263
KS211B-KS211D 26~
' D219S, D220S, D223S 2~1
KS433A, KS439A, KS447A, KS456A, KS468A 273
KS482A, KS510A, KS515A. KS518A, KS522A, KS527A 277
KS515G, KS520V, KS524G, KS531V, KS547V 2~9
� KS539G, KS568V, KS582G, KS596V 283
KS533A 286
KS620A, KS620AP, KS630A, KS630AP, KS65QA, KS650AP, KS680A,
KS680AP 2g9
D808-D811, D813 292
D814A-D814D 295
n815A, AP-D815I, IP 298
~ D816A, AP-D816D, DP 302
D817A, AP-D317G, GP 304
D818A-D818Ye 307
VIII.Variable-Capacitance Diodes 312
KV101A 312
KV102A-KV102V 313
KV103A, KV103B 315
KV104-A-KV104Ye 318
KV105A, KV105B 322
KV106A, KV106B 325
KV107A-KV107G 32~
KV109A-KV109G 329
KV110A-KV110Ye 332
KVS111A, KVS111B 335
D901A-D901Ye 338
D902 340
IX. Light-Emitting Diodes and Infrared Radiators 343 -
KL101A-KL101V 343
AL102A-AL102G 346
AL103A, AL103B 349 _
KL104A 352
- AL106A-AL106V 355
AL107A, AL107B 358
AL108A 3f'~ c
AL109A 363 -
AL112A-AL112V 365
AL112G-AL112I 367 ~
AL112K-AL112M 370
- AL301A, AL301B 371
3
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AL307A, AL307B 374
X. Tunnel and Backward Diodes 378 ~
AIlOlA-AIlOlI, AI201A-AI201I 3~8
~I103A-GI103G 381
A1301A-AI301G 38~
GI304A, GI304B 387
GI305A, GI305B 389
391
GI307A
~1401n, cT401B 393 -
AI402A, AI402B, A1402G, AI402Ye, AI402I 395
GI403A 402
XI. Thyrisrors 404 _
KUlOlr1, KUlO1B, KUlO1G, KUlOlYe 404
KU201A-KU201L 410
~ KU203A-KU203I 413 -
KU204A-KU204V 416 -
KU208A-KU208G 419
D235A-D235G 424
D238A-D238Ye 428
COPYRIGHT: Izdatel'stvo "Svyaz," 1979
[142-3024]
- 3024
CSO: 1860
4
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PU Bi, ICAT I ONS
HIGH-REGULARITY RADIO-FREQUENCY CABLE
Moscow RADIOCHASTOTNYYE KABELI VYSOKOY REGULYARNOSTI (High-Regularity
Radio-Frequency Cables) in Russian 1979 signed to press 29 Jun 79 pp 2,
104 -
[Annotation and table of contents from book bv Nelli Ivanovna Dorezyuk and
Mikhail Fedorovich Popov, Izdatel'stvo Svyaz', 2,700 copies, 104 pagesJ
_ [Text] This book discusses theory and practice of engineer calculation of
coaxial cables with random and periodic 3rregularities.
The authars present the principal methods of mathematical description of
processes in an irregular cable and determination of frequency character-
istics in relation to parameters ~f irregularities in the cable. The
- authors present the interrelationship between input and output character-
istics and examine the basic techniques of designing high-regularity cables,
the specific features of their manufacturing process and methods of .
evaluating frequency characteristics.
~
This boak is intended for engineer-technician personnel employed in develop- _
ment, design and utilization of high-regularity coaxial cables.
.Contents Page -
Foreword 3
Introduction 4
Chapter 1. Theoretical Calculation of Wave Impedance 6
- 1.1. Coaxial Cable Wave Impedance 6 -
1.2. Basic Formulas for Calculating Wave Impedance 7
1.3. Mathematical Modeling in Designing Coaxial Cables 13
_ Chapter 2. Irregularities in Coaxial Cables 18
2.1. Basic Terminolo~y 18
2.2. DPSign and Manufacturing Irregularities 20
2.3. Spectral Analysis Method in Studying Irregularities 24
- 5 -
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Cl~apter 3. Frequency Characteristics of Irregular Cable 27
3.1. Se?_ection of Irregular Cable Model 27
3.2. Methods of Calculating Frequency Characteristics of an
Irregular Cable 29
3.3. Topological Method of Analysis of Frequency Characteristics
of an Irregular Cable 31
3.4. Analysis of Frequency Characteristics of Irregular Cable,
Employin g Resolution Into Harmonic Components 41
3.5. Computer Calculation of Frequency Characteristics of a _
Cable Witn Periodic Irregularities 50
3.6. Specific Features of Calculating Cable Frequency Response
With Quasi-Periodic Irregularities 52
3.7. Statistical Characteristics of an Irregular Cable 55
Chapter 4. Method, of Experimental Investigation of Character-
istics of an Irregular Cable 61
4.1. General 61 _
4.2. Time-Domain Reflectometry Method 62
4.3. Frequency Reflectometry t4ethod 67
4.4. ~Ieasurement of Nonuniformity of A.ttenuation Frequency
Response 74
4.5. Measurement of Standard Deviation of Phase-Frequency
Respons e of an Irregular Cable 77
_ Chapter 5. Design and Characteristics of Broadband Phase-Stable _
Coaxial Cable 83
5.1. Design Elements and Materials 83
5.2. Broadband Phase-Stable Cables of Semirigid Construction 84
5.3. Flexible Broadband Radio-Frequency Cables 89
Chapter 6. Features of Manuf acture of Broadband Coaxial Cables 94
. 6.1. Optimal Conditions for Insulation on Extruding Machines 94
6.2. Methods of Calibrating Solid and Semi-Air Insulation 98
6.3. Applyin g Smooth and Crimped Outer Conductors 99
Bibliography 103
COPYRIGHT: Izdatel'stvo "Svyaz," 1979
[141-3024)
3024
CSO: 1860
6
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PUbLICATIONS `
UDC 621.382.8
ION ETCHING OF MICROSTRUCTURES
Moscow IONr10YE TRAVLENIYE MIRROSTRUKTUR [Ion Etching of Microstructures] in
Russian 1979 signed to press 23 Mar 79 pp 2, 103
[Annotation and table of contents from book by Boris Stepanovich Danilin and
Valeriy Yurevich Kireyev, Sovetskoye radio, 8,000 copies, 104 pages]
[Text] The authors give the classification of the etching processes for
materials used in manufacturing microelectronic devices and examine the
~ mechanisms of ion sputtering and the dependence of the sputtering factor
and t}ie rate of ion etching on the phyaical, chemical, and technological
factors. They analyze the special characteristics of the modes of evacua-
tion, image transport, selection and processing of masking materials, as well
as the radiation defects occurring during ion etching, Various systems of
- ion etching, methods and devices for controlling this process and the pros-
pects of its use in the production of microelectronic products are examined.
Practical recommendations are given for the selection and calculation of
technological parameters of ion etching for various materials and geometry
of sputtering devices for its realization.
The book is intended for technologists of the electronic industry and devel-
opers of new types of equipment, ds well as for undergraduate and graduate
students of higl-.er educational institutions.
- Figures 45, tables 12, bibliography 158 items.
Contents
Page
Foreword 3
Introduction 5
_ 1. Ion Etching Mechanism 20
2. Sputtering Factor of Materials 26 -
3. Rate of Ion Etching 38
4. Effects of Chemically Active Residual Gases on Ion
Etching of Materials 41
7
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5. Selection of the Evacuation Mode and Vacuum Systems 47 ~
6. Special Characteristics of Image Transport from the
Mask to the Working Material During Ion Etchir?g 51
7. Selection and Processing of Masking Materials -
During Ion Etching 59
8. Radiation Defects and Changes in Electrophysical
Parameters of Microelectronic Structures During
Ion Etching 67
9. Classification of Ion Etching Systems ~0
10. liigh-Frequency Diode Systems 72 -
11. Systems with Independent Ion Sources 79
12. Direct-Current Diode Systems 83 -
13. Triode Systems 85
14. Control of the Rate of the Removal of the Material and
Thickness of the Films in the Process of Ion Etching 86
Bibliography 9~
COPYRIGHT: Izdatel'st~o "Sovetskoye radio," 1979
[138-10233]
10,233
CSO: 1860
8
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PUBi.ICATIONS
RADIATIOAI EFFECTS IN SF.MICONDUCTORS
Novosibirsk RADIATSIONNYYE EFFEKTY V POLUPROVODNIKAKH (Radiation Effects in
Semiconductors) in Russian 1979 signed to press 31 May ?9 pp 2, 221
[Annotation and table of contents from book by Prof L. S. Smirnov, editor, -
Izdatel'stvo Nauka, 1,550 copies, 224 pages] '
, [Text] Th is volume contains original and survey articles on curr~nt
problems of radiation physics of semiconductors. The theoretical articles
examine problems of formation, accumulation and annealing of various
multiple-vacancy defects, as well as problems c~nnected with computer
modeling of structural imperfections. The experimental studies deal with
features of formation of defects in the surface layer of a semiconductor
and photoluminescence of irradiated crystals. The authors stress the role _
of thermally activated rearrangements both of radiation defects and
_ defect-impurity complexes present in the ori~inal crystals.
This volume is intended for scientific workers and engineers employed in
- the area of radiation physics of semiconductors, defects of structure
or inhomogeneous systems.
Contents Page
Editor's Foreword 3
G. V. Cadiyak and S. F. Ruzaakin. Numerical Modeling of Imperfec-
tions in Semiconductors by Quantum Chemical Methods 6
A. I. Baranov. Accumulation of Defects and Processes of Amorphiza- _
- � tion During Ion Bombardment of Semiconductors 23
V. V. Bolotov and A. V. Vasil'yev. High-Temperature Irradiation
of Silicon and Germanium 61
N. N. Gerasimenko, N, N. Kibalina, and V. F. Stas'. Surface Layer
in Irradiated Silicon 78
= L. N. Safronov. Low-Temperature Photoluminescence of Irradiated
Silicon 101
- A. I. Baranov. Annealing of Complex Defects in Irradiated Semi-
conductors 130
9
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V. P. Kazantsev. F.lectric Constants of Irradiated Semiconductors 180 -
V, D. Akhmetov, V. V. Bolotov, and A. V. Vasil'yev. Interaction
of De.fects in Silicon During Heat Treatment 205
~ COPYRIGHT: Izdatel'stvo "Nauka," 1979
[143-3024]
- 3024
- CSO: 18h0
10
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PUBLICATIONS
UDC 621.391
RECEPTION OF SIGNALS WITH EVALUATION OF THEIR QUALITY
Moecow PRIYEM SIGNALOV S OTSENKUY IKH KACHESTVA [Reception of Signals with
~ Evaluation of Their Quality] in Russian 1979 signed to press 19 Apr 79 pp 2,
236-237
[Annotation and table of contents from a book by Vyacheslav Petrovich
Shuvalov, Izdatel'stvo Svyaz', 4,600 copies, 240 pages]
[Text] The author examines the methods of evaluating the quality of signals
and gives recommendations foY their use in syste:ns for transmitting discrete
messages for increasing their correctness. Along with mathematical analyais
of the methods for evaluating quality of signals, he treats the problems of -
technical realization of detectors of signal quality and gives resulta of
experimental studies characterizing the effectiveness of their use.
Contents
Page
List of Most Frequent Notations 3
Foreword 5
- Introduction 6
Chapter 1. General Problems of the Theory of Element-by-Element -
Reception with Evaluation of Signal Quality 12
~ 1.1. Probability Characteristics 12 ~
1.2. Criteria of Comparison and Optimization of
ReceivExs with Indirect Method of Error Detection 15
1.3. Synthesis of Quality Detectors of Receivers with
Erasing for Element-by-Element R2ception of Signals 24 -
- 1.4. Control by ~:he Minimum and Maximum 27
1.5. Losses Dur~ng Nonoptimal Evaluation of Signal Quality 30
1.6. Informativeneas of Parameters Used for Evaluating
Signal Quality 36
1.7. Special Characteristics of the Evaluation of Signal
Quality by the Probability of Incorrect Reception
~ when there Ar~ More than two Quality Grades 42 _
11 -
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= Chapter 2. Phase Modulation 43
2.1. General Information 43
2.2. Reception of Phase-Modulated Signals with Evaluati~n
of Their Quality Under the Effect of Narrow-Band
Fluctuation Noise 45
2.3. c~uality Control of Signals with Relative Phase _
Modulation During Correlational Reception Under -
the Effect of Narrow-Band Fluctuation Noise 50
2.4. Reception of Frequency Modulated Signals with
Evaluation of Their Quality in Communication
Channels with Pulsed Noise 56
2.5. Quasi-Optimal Reception with Evaluation of SignaZ
Quality Under the Effect of Pulsed Noise 60
2.6. Control of the Parameters of Received Phase- "
Modulated Signals Under the Effect of Pulsed Noise 62
2.7. Effects of Intersymbol Interference on the Operational
Effectiveness of a Quality Detector 69
2.8. Calculation of Probability Characteristics Under the
Effect of a Complex of Noise in the Channel 75
2.9. Determination of Probability Characteriatics with
Consideration for the Effects of Linear Circuits of
Channels with Pulsed and Fluctuation Noiae 80
Chapter 3. Frequency Modulation 83
3.1. General Information 83 ~
3.2. Optimal Reception with Evaluation of Signal Quality
Under the Effect of Narrow-Band Fluctuation Noise
in the Channel [3.20] 86
- 3.3. Control of Individual Parameters of Received Signals
and of Their Aggregate in a Channel with Narrow-Band
'Fluctuation N~ise � 91
3.4. Synthesis of a Digital Receiver of Frequency-
Modulated Signals Under the Conditions of the `
Influence of Fluctuation Noise 98
Chapter 4. Distortion of a Binary Signal 101
4.1. Characteristics of a Random Process at the Output of
a Binary Device 101
4.2. Fringe Distortions and Splitting of B~nasy
Signa?s 107
4.3. A Mass of Distortions and Its Interconnection with
Fringe Distortions and Splitting 111 _
Chapter 5. Problems of Quality Evaluation of Binary Signals 120 -
5.1. Optimal Registration and Evaluation of Signal
Quality When the Readings Are Affected Independently 120
5.2. Optimal Algorithm for Processing Elementary Elements
for a Case When the Readings Form a Simple Markoff
Chain 125
12
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- 5.3. Effectiveness of the Registration and Control of
Quality in Selecting a Step Weight Function [5.2] 128
5.4. Other Methods for Evaluating the Quality of Binary
Signals 135
Chapter 6. Reception of Compound Signals with Evaluation of Their
Quality 138
6.1. Evaluation of the Quality of a Compound Signal 138
6.2. Models of Error Flow and Erasure Flow 143
6.3. Calculation of Probability Characteristics in
Application to a Code Combination 148
6.4. Comparison of the Effectiveness of Systems with the
- Code and Indirect Methods of Error Detection 152
6.5. Combined Use of Code and Indirect Methods of Increas- ~
ing Fidelity 156
6.6. Algorithm for the Processing of Units with Preliminary
Clearing of Code Combinations from Errors [6.19,
6.20] 161
- Chapter 7. Some Problems of the Quality Evaluation of Communi-
� cation Channels 167
7.1. Evaluation Methods 167
7.2. Evaluation of Channel Quality by the Frequency with
Which the Value Being Measured Gets into the Pre-
scribed Intervals 173
7.3. Evaluation of the Quality of a Channei with Pulsed
Noise Under the Conditions of Parametric Indeter-
minacy 178
7.4. Evaluation of Channel Quality by the Splitting
Frequency Rate 184
Chapter 8. Use of Devices for the Evaluation of Signal Quality
in Data Transmission Systems 187
8.1. General Principles of Constructing Quality Detectors 187
8.2. Description of Some Methods and Devices for the
Evaluation of Signal Quality 192
8.3. Experimental Studies of Systett~s with the Indirect
� Method of Error Detection 201
Supplement 1. Mathematical Description of Some Types of
Interference 209
Supplement 2. Derivation of a Theorem of Evaluations 217
Supplement 3. Modeling of an Error Flow 218
Supplement 4. Evaluation of the Effectiveness of the Integral
Method of Re~istrat;_~n in Selecting a Step
_ Weight Function 221
13
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tiuppleiricnt 5. UelerinLnution of tlie Quuli~y oC ttie DecodLng ut
- Group Codes 223 -
Bibliography 225
Subject Index 233
COPYRIGHT: Izdatel'stvo "Svyaz," 1979
[140-10233]
10,233
CSO: 1860
14
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PUBLICATIONS
UDC 621.396.667.83
SCREENING OF MICROWAVE STRUCTURES
Moscow EKRANIROVANIYE SVCH KONSTRUKTSIY [Screening of Microwave Structures]
in Russian 1979 signed to prese 26 Feb 79 pp 2, 134-135
[Annotation and table of contents from book by Yevgeniy Aleksandrovich
Vorob'yev, Sovetskoye radio, 10,000 copies, 135 pages]
[Text] The author examines the problems of electromagnetic compatibility
and electric sealing of standard microwave devices. He gives detailed ex-
planations of the method of calculation and practical techniques of design-
ing microwave screens, simple and complex electrically sealed waveguide
microw~ave devices and mirror antennas with a lowered level of internal noise
and with a high mutual isolation.
The book is intended for developere, designers, and technologiats working
in the area of microwave techniquea, as well ae for students of higher edu-
cational institutions.
_ Tables 4, figurea 51, bibliography 46 items.
- Contents
Page
Foreword � 3
1. Design Problems of Screening and Electrical Sealing in
Standard Microwave Devices 5
1.1. Outer and Inner Electromagnetic Situation 5
1.2. Special Characteristics of Ensuring EMS [Electro-. _
magnetic Compatibility] in the Designs of Micro-
wave Devices 7
1.3. Main Design Problems of Ensuring EMS 9
1.4. Parameters and Characteristics for Quantitative
Evaluation of EMS 17
2. Physical Principles of Screening and Electrical Sealing of
Micrawave Structures 19
2.1. Characteristics of the Electromagnetic Field and
Peculiarities of the Microwave Range 19
~
15 -
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2.2. ~lectromagnetic Waves in Isotropic and Homogeneous
. Media with Losses 23
2.3. Electromagnetic Wavea on a Planar Air-Conductor
Interface. Physical Principles of the Operation
_ of Metal Screens 27
2.4. Passage of Electromagnetic Waves Through Dielectric
Panels. Physical Principles of Operation of Dielec-
tric Screens 33
3. Designing of Screens and Electrically Sealed Casings 38
3.1. Technical Requirements for Electromagnetic
Screens and Electrically Sealed Ga~ings 3g
3.2. Design Calculati~zs of Homogen~ous Screens 40
3.3. Design Calculations of Multilayered Screens 54
- 3.4. Calculation of Nonhomogeneous Screens 58
= 3.5. Special Characteristics of the Technology and
the Criteria for the Selection of Materials for
~ Microwave Screens and Electrically Sealed Casings 67
~ 3.6. Special Characteristics of the Use of Radio-
absorbing Materials, Metal and Dielectric Screens
in Micrawave Antennas 74 _
3.7. Control of the Parameters of Screens, Electrically
Sealed Casings, and Absorbing Materials 85 -
4. Deaign of Electricall}r Sealed Junctions g9
4.1. Selection of the Design Type for Eleetrically Sealed
Waveguide Junctions 89
4.2. Technological Design Requirements for Electrically
Sealed Waveguide Junctions 95 _
4.3. Electrical Strength of the Designs of Joining
Elemen~s of Waveguides 100 ~
4.4. Layout of Microwave Circuits of Waveguide
Assemblies and Elementa 104 -
4.5. Fundamentals of the Theory of Geometrical Layout of
Complex Waveguide Microwav~ Circuits 115 -
4.6. Layout of Waveguide Microwave Circuits by the Criterion
_ of Electromagnetic Compatibility 122
4.7. Control of the Electrical Sealing of Microwave Con- ~
nections 12g
Bibliography 131
COPYRIGHT: Izdatel'stvo "Sovetskoye radio," 1979
[137-10233] �
~ 10,233
CSO: 1~60 -
16 -
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1'UBLICA'I'IONS
, UDC 533.9
SUPERLONG-DISTANCE PROPAGATION OF SHORT RADIO WAVES
Moscow SVERKHDAL'NEYE RASPROSTRANENIYE KOROTKIKH RADIOVOLN [Superlong-Dis-
tance Propagation of Short Radio Waves] in Russian 1979 sign~d to press 26
Mar 79 pp 2, 3-4
[Annotation and table of contents from a book by Aleksandr Viktorovich
Gurevich and Yelena Yevgen'yevna Tsedilina, Nauka, 3,650 copies, 248 pages]
[Text] This book is a systematic presentation of the theory of long-diatance
propagation of short radio waves. Special attention is given to the investi-
gation of global regularities of the pr~pagation of radio waves and develop-
ment of detailed methods for calculating radio paths. The problems of the
- capture of radio waves radiated from the earth in an interlayer waveguide
channel and exit from the channel with consideration from the effects of in-
homogeneities artificially created in the ionosphere when it is perturbed by
high-power radio taaves are discussed in details.
Tables 17, bibliography 232 items, figures 97.
Contents
Page
Foreword 5
Chapter I. Introduction 7
1. Around-the-World Signals 7
2. Special Characteristics of the Propagation of
Radio Waves at Long Distances 15
Chapter II. Spherically Symmetric Ionosphere 20
3. Wave Equation in a Spherically Symmetric Ionosphere 20
4. Radio Wave Field in An Ionoapheric Channel 25
5. Leakage of Radio Waves Through the Barriers Between
Channels. Capturing Factor 29
6. Beam Trajectories. Pulse Propagation 31 .
Ctiapter III. Horizontally Inhomogeneous Ionosphere 35
_ 7. Geometrical dptics 35
8. Adiabatic Approximation 39
17
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47
9. Lateral Deviations of Radio Wave Trajectories
10. Capture of Radio Waves in An Ionospheric Channel 51 '
and Their Exit from the Channel
Chapter IV. Regularities of Superlong-Distance Propagation 59
= of Radio Waves in the Ionosphere
11. Investigation of Global CharactEristics of Diatant 59
Propagation 81 -
12. Absorption of Radio Waves _
- 13. Calculation of Long-Distance Radio Paths by the 97
- Adiabatic Invariant Method
111
Chapter V. Radio Wave Scattering
14. Effects of Scattering on the Capture of t~adiation 111 -
- in the Channel
15. Effects of Multihop Scattering on the Propagation 124
of Radio Waves in the Channel
142
Chapter VI. Nonlinear Phenomena 142
16. Regular Nonlinear Refraction 151
17. Nonlinear Scattering of Radio Waves
Supplement 1. Distribution of the Radio Wave Field in 166
ConnQCted Waveguide Channels
174
Supplement 2. Analytical Models of Ionospheric Parameters
1. Three-Dimensiottal Model of the Distribution of Electron 175
Concentration in a Calm Ionoaphere
2. Three-~imensional Model of the Diatribution of Effective 185
Frequency of Electron Collisiona
' Supplement 3. Wave Theory of the Propagation of Short Radio
Waves in Horizontally Inhomogeneous Ionosphere. 195
N. D. Borisov, A. V. Gurevich 196
1. Wave Equation in a Weakly Inhomogeneous Ionosphere 198
2. Quasi-Spherical Approximation
3. Interaction of Quasi-Spherical Modes in a Rea1 199
Ionosphere 201
4. Adiabatic Modes of Ionospheric Waveguides 211
~ 5. Capture of Radio Waves in a Channel
223
Additions
236
Bibliography
COPYRIGHT: Nauka, Glavnaya redaktsiya fizikomatematicheskoy literatury, 1979
[139-10233]
10,233
CSO: 1860 ~ E~
18
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