SCIENTIFIC ABSTRACT YELISEYEV, L.N. - YELKIN, I.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002203630003-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 99
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

112 Oil UNCLASSIFIED PROCESSING DATE--230CT70
o,TITLr--EVALUATION OF THE CAPACITY,0F SANDFILES,PH.LEBOTOMIDAEr
FOR
::,.:-~~'TRANSMISSION OF LEISHMANIA TROR:ICA MAJOR :AMONG 'GREAT ~GERBILSF
,UTHOR-(02)-.YELISEYEV# L.N., STRELKOVAv M q'V 0
OF INFO--USSR
_.~S.0URCE`--MEDITSINSKAYA PARAZITOLOGIYA I.PARAZITARNYYE SOLEZNI, 19709 VOL
39 t NR 39~ PP 284-293
- ----- 70
=-PUBLISHED
~-:~SIJBTECT AREAS--BIOLOGICAL AND MEDICAL SCIENCES
~~'_~~,TOPIC TAGS-LEIS.HMANIAP RODENT,, INSECTA'
,~,C~GNTRDL MARKING--NO RESTRICTIONS
CLASS--UNCLASSIFIED
_~PROXY REEL/FRAME--2000/0277 STEP NO--Ull/0358/'tO/039/003/028?t/0293
C I RC, ACCESSIOt,1 NO--AP0124037

2/2 011 UNCLASSI F,IEO PROCESSING DATE--230CT70
C-IRC ACCESSION NO--AP0124037
,;.-ARSTRACT/EXTRACT-(U) GP-0- ABSTRACT, A SERIES OF EXPERIMENTS ON FEEDING
OF SNADFLIES ON GREAT GERBILS (RHOMBOMYS OPIMUS.)~ UNDER CO D T ONIS
N I I
AP.PROACHING THOSE IN RODENT BURROWS WAS CARRIED OUT.: AMONG SANOLFIES
T, 10' TROPICA MAJOR
FED ON GREAT GERBILS, THE INFE_ N RATE,,WITH LEISHMANIA
WAS FOUND TO BE-,59-75PERGENr IN PHLEBOTOMUStAUCASICUSt 53PERCENT IN PH4
PAPATASIv 7-21PERCENT IN SERGENTOMYEA ARPAKLENSISI 24PERCENT IN S.
THE INFECTION RATE OF S4NOFLIES*OE-PENDED ON THE INTENSITY OF
MANIFESTATION--OF SPECIFIC LEISHMANIALIESIONS ONi'SKIN OF THE EARS OF THE
GERBILS DONORS.- DEPENDING,ON THIS FACTOR, THE INFECTION RATE OF PH.
PAPATAST VARIED FROM 7 TO 53PERCENT., TRANSMISSWN OF L. T. MAJOR FROM
SICK GREAT GERBILS TO HEALTHY ANIMALS HA5 BEEN FI!RST PROVEN FOR PH.
CAUCASICUS AND CONFIRMED FOR PH. PAPATASI UNOER EXPERIMENTAL CONDITIONS.
ATTEMPTS TO TRANSMIT THE INFECTJON THROUGH S..ARPAKLENSIS FAILED
BECAUSE THE LATTER REFUSED TO FEEO,AGA[,N*ON GER1310. THE CLINICAL
ANCUBATION PERIOD IN GREAT GERBILS AFTER INFECTIVE BLOOD SUCKING BY ~H.
CAUCASICUS WAS UAYS AND PH. PAPATASI 15 DAYS* SANDFLIES PICKED UP L.
13
T. MAJOR IMMEDIATELY AFTER TEkMINATION OF' THE CLItilCAL-INGUBATION PERIOD
-IN GREAT GERBILS. FACILITY: QTDEL MEDITSINSKUY PROTOZOOLOGII I
KARSHINSKAYA PROTIVOLEYSHIMANIOZNAYA EKSPEUITSIYA iNSTITUTA MEUITISINSKOY
-PARALITOLOGII.1 TROPICHESKUY MEDITSINY, IMP YE, la.MARTSINOVSKOGO MZ_
SSSR, MOSKVA.
UNCLASSIFIED

11-385.623
USSR uDc: 621-313.o42.029.'64:62- _j
YELISFYEV, N. I
tio
a Analysis of a T-wo-Tank Frequency StabilAzation System for a Reflective
:Klystron"
Elektron. tekhn. Nauchno-tekhn. sb. Elektron. SVCh (ElectroPic TechnoloQr.
Scientific and Technical Collection. SqF Electronics), 197D. v,-,P. 9~ PP
66-78 (from RZh-Radiotekhnika,*No 12, D~,c 70, Abstract No 12D38")
Translation: A relationship is fbimd for the Dar=eters a-0 a two-tank
System under condilvions of emission stability of oscillations with a re-
quired frequency over a fairly wide tuning band controlled by a stabilizing
resonator. It is sho,,m that connection of the,load t6, the r;tabilizing
resonator gives better experimental characteristics fo'L- the system than
Connection to the main (active) resonator, Six illustrations, bibliography
of four titles. Resum6.

USSR UDC 3: 621-373-626
TOV, L. P., IOGGINOV, A. S., SEITATOROV, K. Ya.
YKASEYDV, P. G., IVAN
"Frequency Self-Modulation of Emission in an.Injection.Laser"
Kratkiye.soobshch. T)o fiz. (Brief Reports on Physics) 1972, 11 6, pi) 53-5)~
Cfrom RZh-Padiotekimika, Elo 12, Dec 72, abstract No -12J)1118 by A. K.)
3 a2'e
Translation: Spectral chronograms with : a. resolution a- - 10
obtained for an isolated erdssion, channel. in a strip laser based on a double
heterostructure at 3000K. It is evident from the'se chronwrams th" fre-
Quency self-modulation indicates instability of ~irgle-modL einission. and
that this self-modulation accompanies buildup of puli3ntlions and cutoff 'of
slngle-inode em-Ission with a transition -to nonstattionary (spike 11 mult-JE'.0te
emission-i. Frequency self-modulation leads to consider~ible broad'cn~nr' of
the individual excitL
-d modes, crid to blurring of them sprectram, The influ-
ence of the frequency self-mod-alution on the emi i: s 1 on ppectrum increases
with an increase in pumping.

flSSR UDC; 54~.42:621.. ~,,78-525
YELISEYEV, P.G.
"Feterojunction Injection Laserv (Revievr) h
Kvantovaya elektronika (Quantum E'lectranics), Moucow, 1-Fri 0'(12), 1972, ilp ;7-26
Abetract: In the 1~-A few yearr, progreeD in the ~Piald ol, sonicani, ctor lesero
has been connected ,;-ith "he uf,,, r 'tion'S C(M-
jun"tions. 'Top f-
cerning the tive of heterojunc' iona in !]do e~r~ C~c-iy ~:I-
lasers were rm
after the creat ion o--' the inj ec-tion 113 gar. Roalizat JL on cf t'ne -"u-."L3 f--e' t9 01.,
hete role c-ers became ,-,oo i; i ble bec.-oumc of the mawl o r~ ng ho-1 n of it, x I
a
s ol,
grovith of multilayer etructureo bai~pi on.the solL xUonf-~ (Al,Ga')As. Forfeel
ion of heterojinctioris in thic cyatem j.z ~duo to the f,'C" tba., qrjlirl
of variouo comno-,3i including. P.,olliwa uroerlide, ;)raO't1C'A]y
ical cryst9l latticceo. This in turn in conincated wit-')-. tl-Lc~ prO-.Ci.-"JtA'1 of th-3 cr,;-
valent mdil. of gallium ond Thuti tiiera are a CT f~CJA.d
ioan ~rj wh,'-uh the m~,i'luul ['~811111r: t'lld
ible ch.-n-21-ca Of lvttic~- crInatunt) vinile tho width (j' the "'orbidrell -',one
chaniea in a oul'i"iriently ranr~' 01' the;r'
and (kl,G&)'AF-,P) ave nij;~ce~--Xul'ly ucad at vre-sent in ir0ectirn lasoy-Ei. A
number of heueroetr--uct.-areu suitable for injection inserz: Ile formcd oil th,-
taw

USSR
)TELM'.%CW~ P. G.) Kvantova-ya, elek,tronika, No 6(12); 19'(2, 1"D 3-21,:'.
basin of one or m-oro, heturojunct',ic-ma ond. p-n jUrCUG"d,
-o a-~ roon -,d .ra (Iecr -i I, with n A. of
current a te perati, thun I 1--/G] obl-,-tit
two-sided heterootruct-Ires or type Ca"
a I pas si, 1e for trle pirrt t !!,;a U oobtail, Cont M, 117
it w 0
jectior, laer-ro at. room t-:-.iT_jp_rutiIrG-- (UD to 7,1-~60 I'). R1,3ori'lly, he DA
efficiency of het-rolaoexs which are cool~.~.AA nereac,!-M I-o wdljr a of 0.7. D;Aa
on spectril, thres-hold, und outWt, power ch.-~;racteriotii.-,s urf: nreug-ni.cd for
various t1,11)~-s of heterc unction 1:~sers. opporturlitiej for t!'),"dication
of heterostract-kin~s in injection lasers ;are discuijoed. ~2 ill, 5 tab- 7'r rof
Received by editorE3, 18 M~Arch 1972.

USSR UDO 621-378-55
BOGATOV, A.P.,v PANTELEYEV, V.I., SHEVCiMKO, YE.G.
Comparison Of Instantaneous Axd Average Emission Spectrum Of An Injection Loser
In. It. Regime Of Spontaneous Pulsations
Eyant2ja elektronika, Mloscov, No 5, MaY 71, :PP 93- 95
kbetract% A comparison is made of the spectra of the m-altimede generation of an
Injection laBer, obtained with averaging during not more then 10-10 see
('instantaneous" apectrum-) and during 105, pumping puleen ("average" speotrum).
A "Kontroll-2" photoelectron recorder and: a DFS-8'.diffraction apectograph were)
used for oboervation of spectra with a large raeol-iring time. A rrumber of models
of lasers based on haterostroct--ires in the Eryatem GaAe__AlJAs und operating at
~000 K were a-budied. The data presented in the paper p6rtain to a diode with a
typical behavior for all the modele studiod which has a one-way heterostricturo
and a Fabry-Parot rooonator with a length. of 347 micrometer ond a width (if 2-00
d a duration of 200 noac, a rope-
micrometer. A pulea of the pw~ping current ha
tition frequency of 5-500 11z, and an amplitude up to 110 amp. With the presence
of deep pulsationa of laser emission, the instantaneoun~spectrum in the separate
pulses :3trongly differs from the average and containa an arbitrary not of modes
of the number observed in the average spectrum, It Is unpumed that the raOom die-
1/2

1 1 J. :~s

St
j
THIRD INTERNkrXONAL SYMPOSIUM ON GALL1U1*, ARSENIDE i,14D
RELATED CONFOUNDS
[Article by Candidate of Physic,7!1 and Mathematical
P. 0'.- S55P., R*,%5:;.izM,
"T'0=45, -,'a 3;-T1-.5rrh 1971, pp W;-ju~;j
Tbt- Third lntrrn.:jL1ona1 on
undt~ was held.-0'r., _f,-_7_OCL=bCr 197Q in-R~="Cn
k4 `:6~~P6,
Germ'w'syY in. the Te,chnicel Ccllc4~e. ~~,ok%t
200 participants in the sympo:;iur., repro,-enting IG countricn,,
heard and diycusst.-d 32 reports devCtcd to -gar. arc' liquid
the propertkP_-A of material-s, and~nicro,.Jnve, optico-electronic. 3..a
oth-7.r inntruinc.-nts. , The niin aftention Was q!.,Jcn to technQ110gica,
questions In the-synthesis of 5.,111um zirtcrilde., -ind'.Um. paosrr.'. dc--
and a numk~r of nolid. rolutions bzved on them and. also ~the
1, of new In
v
e opraL.,)t ntruments.,
Gollium arzenidc! is 6 -very impo-rtant material of semicon-
ductor and quantum clectronicz. It -is used in uhf-generatorn,
iasers mixfrs, fletectorr~, photocraLhodes, optical modulator,7,*,
ane
Eolar baLtericn, 4,tc. In th6,nu:zber of applicationn', I the
prospects of their further clLvelcprent gallium arzanide evi-
deiitly occupics fir~A. plcv, among, jl'-
though thr. vollme or. its worldwde production. th,,)rx
thaE of silicon. An -for ,;ol:Ld _olutions containinr, K3,11.11.un ar-
renide and oLher compounds of the, tlype AIj:I.BV related tn, it,
their.u~c pcrimits varying Within b_-vad limits tbe main para-
motern of the substance and Inproving thL choracturistics of
lnstruinvnt~,.
In a survey report of C. Wolf and co-workers (USIO on
the state of the technology for tle productioii of pure gallium
arzenide, note was made of the contInuinq improv",:vnt of the
quality of that compound obtain.,_,d 1?y epitaxial methods. In
1969, on the baris,of liquid epitaDqj, at the Marsorhunatts In-
stitute of Technology gallium 'arsenide wai obtained with a total
140
.U,

J_
USSR uDc: 621.373:530.145-6
DOLGINOV, L. M., DRUZHININA, L. V. ,YELISEYEV, P. G.!.:I MRASAV
IN, I. V. ,
11BOV, L. D.
"Continuous Emission in Semiconductor Lasers at Room Tenmdrature"
Kratkiye soobshch. mo fiz. (Brief Reports on Physics), 19-(l, No 2, pp 57-63
-(from RM-Radiotekhnikal
No 6, Jun 71,~Abstract No 6bl58)
Translation: The authors describe injection lasers'based on symmetric
heterostructures with strip geometry operating in the continuous mode at
a -temperature of 300"K. The heterostnictures are produced by the method of
liquid epitaxy from solutions in gallium. . A layer of N-type AlxGal_xAs
2-5 p thick doped with tin (if emitter) was,grown on a substrate of N-type
GaAs oriented in plane (100), followed,by a.layer of.11-ty-De GaAs (undoped)
or P-type germanium-doped GaAs. (active layer) 0 4-1.2 )1 thick, a layer of
P-type germevaium- doped AlxGal-xAs 1.7-2-511 thick (P-emitte-r), and finally
a fourth layer.of P-type GaAs (with germanium) to make a lov-resistance
contact no more than 2 p thick. A sil~conAioxide film was deposited on
the P-side of the heterostructure, and bands 15, 11 thick were photographical-
ly etched in this film in direction [1103. The value, of x was typicaL
Ly
112

2/2
- m - 11 1.''..", 1 1
ii ....
I . 1 11 H . 1: -1 : i I . I ; ~ I

USSR UDC. 621-373:530.145.6
AKERMAIT, D., YELISEYEV, P. G., KAYPER, A.:, MAN'KO, M. A., RAAB, Z.
"Methods of Mode Selection in Injection Semiconductor Masers"
V sb. Kvant. elektronika (Quanuum Electrohics -collectibn of vorksl ,No 1,
Moscow, 1971, pp 85-90 (from RZh-Radiatekhnika, No 5, 141W 71, Abstract No
5D173)
Translation: In order to improve the spectral composition of emission -Prom
an injection semiconductor maser, especially to increase the output power
in one vave mode, external elements having spectral selectivity were intro-
duced into the maser cavity. The following modifications were experimentally
studied: a) a composite cavity; b) a cavity with an interference filter;
c) two optically coupled cavities of the Fabry-Perot type with different
lengths. The effect of the external selective element in the maser emission
spectrum is observed in all cases, and emission on a single longitudinal wave
mode is achieved at an appreciably higher excess over the threshold than in
conventional semiconductor in.jection maserss. The output power in the single-
-frequencY Mode ivl as hi6r, ag 6.5 w (in the ca0e oT a composi-te cavity).
An investigation is made of the possibilities for tuning the fitaser wavele-riaLb
by measr. of external olerrents within -the rahge.of the amplification band of
the semiconductor. Five illuatrations, bibliography of fifteen titles.

USSR UDC 621.375.82
AKERMAIN, D., YELISEYEV, P. G., KAYPER, A., MAN KO, M. A., RAAB, Z.
"Methods for Selection of Types of Oscillations in Injection Semiconductor Lasers"
V sb. Kvant. elektronika (Quantum Electronics Collec~lion of Works), No. 1,
Moscow, 1971, pp 85-90 (from RZh-Fizika, No 7t Jul 71, Abstract No 7D1115)
Translation: To improve t-he spectral composition of radiation of an injection
semiconductor laser, particularly to.raise the yield pov-er in a mode of a single
type of oscillations, external elements having spectral, selectivity were introduced
into the resonator the semiconductor laser.. The following versions were studied
L
experimentally- (a) a compound resonator. (b) a resonator with an interference
filter; (c) two optically connected Fabry-Perot-ty-pe resonators of dif-
-ferent lengths. The effect of the external �elective'element on the radiation
snectrum of' the laser was observed in all cases,and gena-ation in one longitudinal
type Of 03Cillations was ach.-Leved for an 'essentially greater excess of the
threshold than in ordinary injection semiconductor.lasers. The output power in a
single-frequency mode was up to 0.5 w (in the case of,a ccmposite resonator).
Possibilities of detuning the wavelength of the laser with the aid of P-26_Ra concentra-
tion in these sediments.
romp, MIM MIMMUMM Off M-ff=- IMMEN

ccq UNCLASSIFIED PROCESS.ING DATE-20NOV70
CIRC ACCESSICN NO-AP0126137 a
_-__A8STRllCT/EXTR,.4CT--(U) GP-0- ABSTRACT. ~PT ~FORMS 2 COMPLEXES SNCLSUB2
AT A FT,.,SN" RATIO OF III AND 1:2r !RESP., IN SOLNS. lJF 1~-ZPI CHLORODES AT A
ICI-41C STRENGTF OF MU EQUALS 2 1 JW,SOLNS- CD,'qTG,, 0*25-0.5M
'.-:~'CHLUR IDES. AT THE SAME JENIC STRF_NGTH,,W,CO?4PLtX vii
:TH A' PT:SN RATIO OF
L
JS f6RHED. ThE AV. DIAAUCN.,;'C(i IN JHE 2M IHCL MEDIUM EQUALS 1.1
. NSf.
--.r:il/iE-S UO PRIME NEGATIVE6 ANO IN 0.25M _IqCL~ 3.7JIME!,31 10 PRIME NEGATIVES.
...:,TliE! EXISTENC N5 ISOMERICIFfil
A,
-E OF CIS TL RMS OF THE 9T CGJ~PLEX V41YH SNCL
SUB2 IS.SUGGESTED. THE COEFF. OF MOLAR ABSORPTIVITY AT 310 M MU IS 5
IMES HIGHER THAN THAT AT 400 M MUt-WHICH ENABLES.[*CREASING THE
-SENSITIVITY OF T~:E PHOTOMETRIC DETN. OF~PT TO-0.0007 GAMMA-ML.
'FAL ILI TY: !NST. CATAL., NOVOSIBIRSK,.USSR-.
UNCLASSIFIED

7
USSR UDC 614.7:615.285.7-632.95]:613.2
SHITSKOVA, A. P., Y,_qTZAROVA, 0. and~RYAZANOVA, R. ~A., Noscow Scientif.-lic
Research Institute 0 1.4- ~ ipAwm
Hygl~ii;4 ~f m"eni T. F. !.Eiisman-
"The Pesticide Cycle in the Environment a d Problems of Food Hygiene"
n
Moscow, Gigiyena i Sanitariya, No 11,1970, po 7-10
Abstract: Practical experience with pesticides shows that soil suffers the
severest contamination. Organochlorine compounds can'b.e detected in soil
long after their initial application, for examplex heptachlor and hexachlo-
are detected after 9-11 years. Trace:amounts were:Iour-d in the lower
soil horizons 9-18 months after their initial application, pointing to the
possible migraLion of pesticides via rainwater from upper layers to deeper
.layers, and their possible entrainment in ground vater -AiichTis a source
of potable water supplies. Soil composition and structure are important
in the accumulation of toxic chemicals in rhizomes. For example, the
greatest amount of lindane is detected in carrots grouni on sandy loam, and
the least -- in carrots grown on chernozem soil, though five times more
toxic chemicals were applied in the latter case. . From our data, potatoes
grown in different soils acquired disagreeable organoleptic properties
when carbathion was applied in several caaes.~and adversely affected ex-
perimental wAmals.
I?

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HEMICAL ABSTi, 3
[77~

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brought into contacVat 20* wit stainlps5.st~ P

ressure (P) for a predetcl. length ofame (t). ~ The mili. friction. I
P a
"'ove th6 cuti,6',along the Wel stirface'
force (F.) required,C6 m
with.a.i-elocityl 11 was then detd. Ploliiboiv the ch"ge of F with
tern.p. obtained at V 100 mm. Ir niii. and P = 2114,./cm.'2 at
'
160 to 40*. There 14- a point at. 40': (tradsition'tk
mp., T,) at
which the increase of the temp. 40es~~i6t change F, 'but the de-
crease of the temp. increases F to 4 max. at about -`120'. ~ Be.
tween ~ 120' and - 1601 F dccrea~e,~- ~The po~'~ition~or T, shifts to
higher temps. with the. i1ricrease of P-I Thm obsen,ations: tue
l
ubric~ajit~ with tiern
partly due to the viscosity~(~) changes 6fthe l
P
and are characterized by Sommerfeld criterion Z Vf A Plots
when4 is ' 5-50 range. The,'poM I

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surface roughnpss also chnngei the appea
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.19500,41 1

gnes
USSR VDC 669.018.29:669.013.672
DRITS, M. Ye., SMERSKAYA, Z. A., YELKIN., F. M., and~VROKHOVA, V. F.
Sverkhlegkiye Ronstruktsionnyye Splavy (Superlight Structural Alloys), Mosco~w,
lzdatel'svvo "Nauka," 1972, 145 pp
Translation of Annotation: This monograph summarizes experimental studies
on the structure and properties of magne~ium~4ithium -alloys,carried out in
the Soviet Union and elsewhere. Systematized data are~presented on the
nature of the reaction of magnesium with lithiun and other elements, as well
as the dependence of properties of Mg-U alloys on their comoosition, struc-
ture, and treatment. Inforuuttion on.the.application of, superlighL alloys in
various new branches of technology is also presented.~
This mono-raph is intended for scientists and engineers at scientific research
institutes, planning organization, and industrial design institutlons dealing
with the development, production, ind application of light alloys. It may
also be useful to teachers and studentsa -t higheredu6a(4,onal institutions
specializing in the metallurgy of light m tals.
e
Translation of Table of Contents.- Page
1/2

T_
VP
'USSR
DRITS, M. Ye., et al., Sverkhlegkiye Konstruktsionnyye Splavy, Mosew,
Izdatel 'stvo "Nauka," 1972, 145: P*P
Page
Introducti on 3

Chapter 1. Physiochemical and '11-lechanic
al Properties~ of 'Magnesium
and Lithium 5
Chapter 2. Interaction of Magnesium With Lithium and Other Elements 12
Chapter 3. The Effect of Lithium on the Properties of Magnesium 32
Chapter 4. Structure and Properties of Magnesium-Lithium. Alloys
Formed on the Basis, of a-So lid, Solution Itich in 'Magnesium, 51
'Chapter 5. Structure and Properties of:Magnesium-Lithium Alloys
Containing (a + a) Phases 7 7
Chapter 6. 1,11agnesium-Lithium Alloys Containing 0 Phase 88
Chapter 7. Strengthening and Stabilit~ of,Mechanical Properties of
Magnesium-Lithium Alloys.Contaihing:6 Phase 114
Chapter 8. Corrosion and Protection of Magnesium-Lithium Alloys

From Corrosion 124
Chapter 9. Application of Magnesium-Lithium AJ, loys 136
References 140
Subject Index 143

21

UDC 66967211884
VYATKINo 1. P. s MORKOV, S. V.v =iCKNvV.A% I and "YUq
"Technological Requirements For the Production of Vaf~n .6siun-Lithium Alloys"
Moscow# Tavetnyyo Retally, No 6, 19721 43-44
pp
Abstract: Two methods were considered for the preparation of magnesium-lithium
alloys. One method required the use. of a protective flux conzisting of molten
lithium chloride and lithitzi fluoride. It was umacce~table I,Dcause of many
difficulties encountered during the work. The Docond method uses argon as
a protective atmospbere in a 500-kg crucible equippel with a cover. Tho
charge elementu are added in the following nequencet 4t first, a small 0
emomt of magnesium ingot vith 'is aeltod In the crucible mt 700
for 4-5 hr, then a high-purity mWeslua ingot itith not morii than 0.005% Na
is added at the same teaporatuxo, folloOd by aliminuni, zinot cadnium, and
lithi=g In that order. The alloy was aixad,f or:- 5-15. min aftor the addition
of. each alloying element. All metals were added, as ingots In order to
eliminate impurities, especially Ra.. Uthlum,ingots w.ere irtuffied in kerosene
at fi= t, wiped up, and di-led in air before being p] aced into the
crucible. The whole production pv%cejs~took:9-10 hr,t The p