SCIENTIFIC ABSTRACT ZASYADCHUK, I.M. - ZASYPKINA, V.S.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001963920002-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 15, 2001
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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KHRUS N.V, I 4WjAR-'A",L I RUDAKO V, - A. P. KAURETS
-~017f H.S.; FODGORNTY#
a?.; SHILIN A,A-$')='NIKOV,, X,Vs; BURKSTItOV,, A.Ao; MVCEZIKOt
V.V.; HAUX07p T..L;-ROZ!NKO,, ?,,A.; X!UZIlaCHp Aiilq ZIDImmop-A.R.;
BRANIMO 0 9. 3TRUY&TO' -- A. 1. OMMOVSKITt-01.7,; 5OIKOj_A,.A;j
KMAN, Y.ra*j USKOV..-A.A.1 VLADYCflENKOpI.M#-'j TOI'CH4YEVp 'A.V.1
IMTY=Vp VoLj.-KlIUDOSOVTMV,-N.Aj GRAFOVI-LoYof; IVANOV,, V.A.1
.-KRATENKOP IA; GOLUB~-AoD.; IVONINp I.F.; SAVGffl',NXO,A.A.j
ROZHCHENKOO Ye.N.1 CHMUEGbV ,j A*Sol KAMLOVO Hilf.1 tATAYATS, A.M.1
GAPONENKOt F.T.1 PCIIMTOVl .1,Apl' SKLYARO D.8.1 110NOMARMO I M.P.
POTAPOV, A.1.1'FOLTAKOVi N.V.1 SUBBOTINjI.A.) POLSTYAROY, G.M.1
TRMIMp FAI -TKACHENKO,, AO*0.1-b$TROVgkIYi-S.B.;-NIRTS3V$ AP.;
H?
DYADYK 8 AWKO~ T.P i RUBCHENKO V. P,,
Ko:h&-at Ivanovioh Poohankov) -obitu=7, Sov.- shakit. "l1 no.9%
48-8 1620 (MIRA 150)
(pinhankov, Kon&at Ivanovich, V05-1962).

mzinw-i W?~~ , I'll, -elw%l*VTx
. -.. - - . - ~. ~ : .,.7 .1 .
. -- ;4;~-~,A,'~~,~-,~~,I--.*- - -
e I ~ I ` " 1 14, ~ elt., Q

Monthly LInt of Ruggian AcoosmlgEL& Librar7' ofC
ongrese, April'1952.
Unclassified.

offma

IMYLIXA, T~.O., inzhone'r; BLAGORAIMZHDIN. V.Te., inzhoner; BOGUSLAVSKIT,
-tekhnicheakikh nauk; VOIROXKOY, I.M#, professor
P.Ye,, kandidat
0ITTRA. L.Ya., Inzhener; GROYAN, Y.B., inzhener;
doktor takhnicheakikit nnuk [deceased]; 13HISM, IOX., kandidat
tekhnicheskikh nauk; DOVZHIK, S.A., kandidat takhnichankikh nauk;
DUEELISKIY,-14.P., professor, doktor khimicheakikh nauk [deceased];
DYKHOVICRIIYY, A.I.,
professor; ZHITKOV. D.G.# profoissor, doktor
tekhnicheskikh naul-.;.KOZLOVSKIY, N.S., lnzhener; L.UGITIN, Tu.M.,
doktor tekhnichaskikh nauk; LEVEIISON$ L.B., profes-3or, doktor tekhni-
cheskikh nauk [deceased]; LEVIN, B.Z., inzhener; IJPKAN,:V.F., inzhe-
nor; MARTYNOV, X.V., kaididat tekhnicheskikh nauk; MOLEVA, T.I.,
Anzhener; NOVIKOV, P.S., kandidat tekhnicheskikh rauk; OSXTSKIY, V.M.,
kandidat tokhnicheskikh nauk-, 0STROUMOV, G.A.; P01ORARMIKO, Yu.IP.,
kandidat tekhnicheakikh nauk-, RAKOVSKIT, V.So, kaiAidat telchnichaskikil
nauk; REGIRER, Z.L.,, inzhener; SOKOLOV, A.N., inflioner; SOSUNOV. G.I.,
kandidat takhnicheolcikh nauk; STEPAITOV, V.H. 'pro:ressor; SIMIAKHANOV,
M.M., kandidat telchnicheskikh nauk; BLIKIND, I.A., inzhener; YANUSHE-
VIGM, L.V., kandidat tekhnichoskikh nauk; BOKSHITSKIY, Ya.M., inzho-
redaktor; BULATOV, S.B., inzhoner, redaktor; GASHINSKIY, A*G.,
inzhoner, rodaktor; GRIGROIYEV, V.S., inzhener I redaktor; YF.GUIUIOV.
G.P., kandidat tekh,nicheskikh nauk, redaktor; ZHARKOV, D.V., dotsent,
redaktor; ZAKRAROV, Yu.G., kandidat tokhnicheakik.h nauk, redaktor;
andidat tel,.hnichoskikh nauk, redaktor; KOMARTOV,
KAMINSKIY, V.S., ke
Ye.F., professor, redaktor; XOSTYLEV, B.N., Inzhoner, redaktor;
POVAROV, L.S., kandidat tekhnichoskikh nauk, redsiktor; ULINIOH, F.R.,
-or; GLADILIN, L.V.,
redaktor; KLORIK'YjkN,,S.Kh., otvetstvennyy redakl.
redaktor; (Continued on next card)

IMYLINA, TS.O. (continuod) Card 2.
RUMNEYT, K.V.j reduktor; MERPIGORUS A.M.i t;lavnl,7 redaktor;
LMBANOV, F.A., reduktor; UIRANOV, A.I., redaktor-, BUCIUMV, Y.E.,
redaktor; GRAFOV, L.'re., redalctor; DDKyjllff, A.Y., redaktor; UDERMID-
redaktor; KRA.8111KOVSKIY. G.V.
KO, A.N., redaktor;,.,Z44Y_APj!
redaktor; LETOV, N.A., redalcia~'-,"DIS-HIN, GIL.. redaktor; WIKOV-
SKIY, G.I., rodaktor; MELINIKOV, N.V., radaktor; O'JIKA, D.G.,
radaktor; OSTROVSKIY. S.D., rodaktor; PO)MOVSKIY, I.M., redaktor;
POLSTYANOY, G.R., redaktor; SKOCIIIIISKIY, A,A., rodakbor; 3011111,
S.D.-, redaktor; SPIVAKOVSKIY, A.D., rodaYtor; STADGWIX0, I.X.,
rodaktori SUDOPIATOV, A.P., reduktor; 'TOPOIIIYEV, fi.V., redalktor;
TROYANSKIY, S.V., rodaktor;, SHOYAKOV. L D., ref,10,tor; BYIQIOV-
SKAYA, S.N., redaktor izdatellntva; ZAZ~;,ISKAYA, V.P., toklinicho-
skiy redaktor; FItOZOROVSKAYA, Y.L., tokhnicheakly rodaktor.
[Mining; an encuclo~)edic handbook3 Gornoe delo; witaiklopodicheakii
spravochnik. Gla-v.red. A.M. Torpigorev. Chleny glav.red. F.A. Bara-
banov i dr. Moskva, Gos.nauchno-tekhn.Izd-yo po ugoltnoi
prom3rshl. Vol.l. [General engineering] Obshchie inzhenernye
Bvedeniia. Redkollegiia toma S.Kh.Kloriklian i dr. 1957. 760 p.
(Ifining angineertng) (HLRA 10:10)

4 A-
GRAMV, L.Tn.,red.; G14BEW11, I.1).,red.;.ZADZMrDKO.,J,.H., red.-.7ZASTADIM
A. S
red. j XWHIKOVSKIT, O.Y., red.; KU2,'RICH.
TALATNTS, A.M., -rod.; 1OWNIKOV,L.G., rod..- HINDEI.-Ij Z.O., kand.:
tekhn.naut; 0141KA, D,G., daktor tokhn.mauk, rj4.; I-ABOT, A.D., red.;
POCEMIKOV, K.I., rad.;,TWIGOIW. A.'A., akadomik, red.-, VSKOY,A.A.,
red.;IHARCHEINO. A.K., red. t. SRCMWRIR,, M.A., red,; BOTKO,.AjA.,
rod.; MLAMFD. Z.14., kand.tekhn.recl.: PERTtMUIN. A.G., rod.-,~-'
BARATIANOVi P.A., rod.;.SOSXOV, G.A,,, red.; T5MIN,,-V-.S., red.;
AUADOVA,, Tfi. ItoWs.red..
~Restoratiou of the coal Industry in the Denote Baiial Vosetano-
*19nie ugollnot pronyiehlonnosti Donotskigo*basseinx, Moskva, Goo.
'nauchno-tekhn.izd-ve lit-ry po ugallnoi:promyshl.*Ugletakhizdat.
V01-1. 10157. 371 ~.-Vol.2. 1957* 782 p. , 1, 11 1. (MIRA 11:4)
(Doneto Basin--Coal mines and mining)

------ --- -
GRISHKINOV. I.A.;
_4; NUCHMM, V.A.; PAVIEM, A.S
,AtASYA "I
V.S.; WISTOW. Z*A.; TWT=V, K.T.; SHINNOY, M.S.;
M=07, D.G.-, IP)VZ:Mlg I.T.; NOSOW, R*P,.- ABMMWW, A.M.;
Immusov: 4.H.: 1ATUREM, X.Do; TAUSOT# YoTsv- GABDARK, K#A-;
WIN. I A'; GIMURG, SoZ&; ALHISANMW, A,P.; imm, ra.;
czwV, i.i.;.405NIN. L.A.; BWZAMV. A.A.-O HATRUSHYS, I.I.:
IMSHIN, U*Vo; AGHKASOV# D,Ie; WOSOv G*A*; DRMfSEMVo Ael.:
PUTOKOV, N.A.; ZHIMIN, D.G,; PROWSLOV, V.]P.-. ERISTOV, V.So;
.SAPOZHNIMY, Y.Y.; USATKIII, X.V.; AUWAKMV, X-Ya.; EDTIIMKIYB
DO'Gi
uary. Ilek.st 29 no.8:1-2
Ysdor Georgievich Loginov; obit a
Ag 158. (MIRA 11: n)
(Lpi,inov, 7e&r GeorglavIch 1900-19!;8)

........... . ..
KO ZLOV, F *R. KOSYGIUp A. N. NES)WAITOV, 11. ANTROPOV, P. Ta.
MYUTIN, V.P.; ZMAKOV, A P.; KIRILLIN, V-A,; TOPO'HIM, Al~-dxi-V*
BLAGOUUVOV,- A. Ao Z~~Wv.' L.D.; SHILZUj A.A#. IEL 0 UZZOV, M. V.
KRASIIIKOVSKIT, GoV.; VOPCHMV, A-y T.'; -BOYKO, A.A44 BRATC 00 B.F.;-
GROOV, L.Ye.; KUZIHICH, A.S.'; MTMKOs I,M-; MAN'K()VSKIY, G.I.;
FLAKSIU, I.H.; AGOSHKOVO M.I.; SPIVIKOVZIY, AO.; POCHMOV, K-I.-
0
KRASOZOV, I*P.; X0705M. G.V.; LINDEUAIJ, N.I.; MUNTSM.K-K.
Academician A.A.Skochinskil; obituary. Bezov.truda it prom, 4 noslli
18-19 N 160. (MMA 13:11)
(Skochinskii, Aleksandr Aleksandrovich, 1873-1960)

MORMON
IMSHBYANOV A-N.
KOZLOV, F'R. XOSYGIU, A-14;
ANTROPOY, P-Ya.; IMLYUTIN, V.Po-, RUDAXOY, A.P.; XMILLIN, V.A.;
TOFCHZYAV,. Alc'xuaxxlr 7. ; BLAGOMAVOV, A.A. - SUZITAKOV, L.D.;
SHILID, A.A.; ISLINIKOV, KRASIIIKOV-SKIY, G.V.; TOPCIfIrxV,
Aleksey V.; BOYKO, A.A. ; BRAMMO, B.F.; GRAFOV, L-Te.; OWMICH,
A-fi.; KRAT2',1,KO,, I.P.; 1-lAb:-'KOVSCIY. G.I.; PLAKSIlf, I.N.; AGOSSMOT, H.I.;
SFIVAKOVSKIY, A-0.; POCMIKOV, K-I.; KRASOZOV, Z-P-;-KOZHBVIl1, G-V.;
LINDERAIT, Yl-Lq KUZIOTSOV# K.K.-
Academician A.A.Skochinalcli; obituar7. tkmt.ugl,~ 9 no.11;22 N ,6o.
(MIRA 13:12.)
1-1960)
(Skochinolcit, Alpksandr Aleksandrovich, 387,

..s : ~- - ~ - I:. -, -, ~- ~ M- ~ , - ,
ago= . ~ .1 1~

Z".YAD IKOp L.9,
DePmAenco of the c6efficients of scale formatior, upon the
rate of circulation in the evaporation of sugar Ijiuices. '5)
Trudy KTIPP no*25:124-219 162. (MIPA 16-
(~vaporating appliances) (Sugaj~ mam0aotime)

TOBILEVIOlls )l Yu.- ZkSYAD'KO, I.N.; KATNUSH. Ya.O.;-VOU)SHKO, D..M.; rALIHill;A.
z.m
Increasing the corrosion resistance of heat exithanging pipes for the
31-4o.4947-53 AP 157. (KM IOW
i.7 ~~ent'rsl~W mauchne'riseledovatellskly institut eakharnoy promysh-
lelanosti (for Tobilevich, Zasy4k'kq_4Tkd Kateush), 2. VNITI (for
Shchasno).-
(pipe) (Corrosion and antLoorroeives)
Mal ME" F "M IMP MRIMMUMM

-: - t ~ . , ; -, ` i : 2~f.? F:SS' ~- ~wh t, ~ ~~ , I . ~
I - ~, ~~ ':~' ,-. -,_ '41~ ". .1 - - I . .

21 --F~ 111--l-WIllp.-I

IOBANOV, P.-, BREVOEff, Do; OLISHANSKIY, M.; LYSEIMD. To; JUSAUBKO, It.;
SINTAGIN, I ; YAK]SHKINO I.; PREZENT, I#; VARUNITTAN, I.; KOLEMEDV,
V.; YEVTUS.;~16, A. LIA5WRUJOU.-T.; ALISOY,, A,;
ORSHKOV9 I.; IM101010110Y# I..; VIDEITIN* K.; aRMV# Go; CHHOEM, So;
,BAKHAREV. A.; TIKIVTOVA, A.-, KMIMIN, A.; MMULIN, Go; TOLMACFMV. I.;
LTSM, Too; KHARITONOVAO Ye,; - KUSFUIIREIMOO M.; I(OVOPAVIOVSKAYA, No;
ZHIRONKIN, I.; KATURA, 0..- KIRYWIN, I*; 111KITU, B.; TSVETAYEVA. Z.;
ARWPOV, B.; OSTAPXIMD, V.-, IVANOV, V.; BUTtMOT, V.; LUTXOVA, I.;
TSMAYEVA, Z.; ARMPOV# B.; OSTAFRIMD, V.; IVANOV, V.; BTJTTJZOV, V.;
LUTKOVA, I.
P.N..IAkovlev; obituary. Agrobiologiia no.6:119 .1-D 157.
(MIRA 10:12)
(IAkovlev, Pavel Hikanorovich, 1898-1957)

ZASYADNIKOV, T.F.
State of trees planted In clu3ters In Gorki Leninskiye.
Agroblologil& no.5t783-784 S-0'63. (MIRA 17:5)
.1. Vsesoyuzrrj7 nauchno-issiodovatellakiy inatitut ekonomiki
sellskogo khozyaystva.
J2

3/185/62/007/010/0-15/020
D234/D308
uk 0
AUTHOIW: Dubovytslka, N. V., Zasymch Larikov, N.
and i?etrov, IN. M.
TITLE: X ray mothods for'the inve8tioation of the kinetics
of growth of recrystallization centers
PBRIUDICAL; U kray i ri tj I kyy f izyclinyy " hurnal v. 7 no 10 190,21
1134-1136
TEXT. To determine moro accurately the dimiensiono of recrystalli-
zation centers'corresponding tothe appearance of 'Punches', thin
.(0.05 mm) carbonyl Ni foils (99 09 9~', Ni) were 3tud:'.ed by electronq
micro.-.;copy, ,,ifter which x ruy photographs at Cu K wavelenj;th. uare
C(
taken. Appearance of centers with maximum'dimension L = 2 x 1 cm
artor annsialint; dUl'ih~,' 15 Win ;'-It j2000 COVruapondii to thu apputLr-
ance of first 'punches'. on x ray phot-ographs. Cen'Oers -olith L
7 x 1074 cm correspond to very large quantities of 6po-.s and even
to disappearance of the continuous line backgroun(I-There is 1
--figrure.
Card.1/2

S/I85/62/007/002/011/016
D299/D302
AUTHORS: Za ymchuLj.._QB and Larixov, L.N.
T IT LE tinear -ro,.-ith rate of recrystallization sites in
niobium
PERIODICAL Ukrayinslk-y fizychnyy zhurnal, v. 7, no. 2, 1962,
Y
202 - 204
-1~2133XT: The temperature dependence was studied of the linear L!,:rowth
L
rate of recrystallization. in niobium (99-997 /"1' pure), deformed ~y
94 %) by uniaxial co,,,-ipresoion at room temperature.: The specimens
were heated,in evacuated quartz containers; the temperature varied
between 960.and 10800C. The recrystallization rate was measured by
the tine T ' after which the first visible recrystallization sites
(of size L) aDDeared. In the references it was shovrn that T 13 main-
ly determined (in very defor:~,ied Mctals)q by the linear growth rate,
G. X-ray pictures of the specimens ,,tere taken. A fi,,ure sha:is -p-e
microstructure of niobiUMt tempered for 1 hour at a temperature of
Another figure shows t~e graph :LgG versusl/T. -The depen-
Card 1/2

S/185/62/07/002/011/016
Linear grovith rate of D299/D302
dence is practically linear and can be described by the equation:
G G exp(-QG/RT) 10 16exp( 130000 � 1000 3)CM/sec.
0 RT
The lazge values of G and Q -xe noted; they are apparently due to
G
the Dresence of impurities. Asimilar effect was o'.)scrved by other
investi,gators in aluminum and also in n okel, Tho obtainod recults
I' nov
wer6 compared with the resix1ts a," J,.I. Lysak, and '..). V. Tylrk,.o
I j
(ReL. 5: Pytannya fizyk meta iv ta metaloznavstva, Vyd-vo AS Ukr-
HSR, Kyyiv, 1958, P. Mf concerning tempering of niooiuLa. Of siC,-
.nificance is*a considerable decrease in the hardnei;s of very defor-
med (ai roorn:temperature)niobium, aged at 650 - 9500C before recry-
stallization. There are 2 Jfiaures and 6 references: 4 Soviet-bloc
and 2 non-Soviet-bloc. The references to the EnCliz-h-language pub-
licat4ons read as follo-as: V1. 1-ndersont R.P. Michl, Crans. A ~
E112, 161
140s 1945; T.EE'. Tiezz, R.A. Anderson, J.E. Born, Txans. .911IM!"t 185,
921, 1949.
ASSOCIATIO!q.- instycut metalofizyky ADI URSR (Institute of Physics of
Metals of the AS UjcrR3R), Xyyiv
SUBMITTED: March 17, 19bl Card 2/2

KOCMMOT, Aleksey Stepanovich; HAZAHOY, Aleksey Gavriliwich;
Aleksey Georgiyevich; GDOMIKU, Nikolay Roberj~;ovich; T=OY,
Boris Arkad'yGvichl TROTTAWV.
Andrey Konstantihovich; FILUTOW, A.S., kand.tekhn4nauk, retsenzent-,
RYAZAHOT, X.I., inzh., retserzent4; VKHMOW, itith., red.g
TAWKOV, U.P.,
(Manual for modelmakers) Spravochnik rabochago.-modellshchilcas
Y,oakva, Gos.nauchno-takhn.izd-vo mashinostroit.lit-ryp 1959.
379 P. (MIRA 1333)
(Models and modelmaking)

-i il~ ri-P
- - - - - - - - - - - -
XHLMIKOVp Stmislav .1hiti-1yevich., starshil prepodavatell'i ZASYPM.
aspirant ------------
Modeling of single-phase bridge rectifiers vith ideal valves
using unlog computers* Tzv* vyse uoheb* savol elcktromakho. 7
noGW44105 Ik64 (MM 17 97
I* Rafedra taoratioheakoy I. ob9hche7,a1~ktrotakWki Novocher-
kaeokago politakliniohookago inatituta (for Mobnlkov) 2. Ka-
fedra elektrichaskikh stantsiy, setey i s) tem Novochorkwkt-
go.politekbnichookogo inatituts. (for Tasypkin)e

I . .1 . . I I : - - . 11 --y t,,- -, v .. ~ - ,.,
I ~ i~ " 0;!~, _,

ZASYPKIN, Alo,knandr Sergeyevich, aspirant
Fighly sensitive short-circuit protection system o~ a step-down
transformer with wide voltage regulating range under loaJ. Iz-T.
vys. ucheb. zav.; elektromekh. 6 no.11:1265-1270 163.
(KRA 17:4)
1. Kafedra alaktricheakikh stantsiy, setey i sistem Novocharkasskogo
politekhnicheskogo instituta.

MWOM
AAYPKIN uh.
Standardization of pover resources in industrial enterprises
of the Karaganda Province. Prom.energ. 19 no. 2:?-9 F 164.
17 (MIRA 1725)

ACCESSION NR: AT4037672 S/2981/64/000/003/0330/0338
ZaLy*pkln, V._A.; Gabidullin, R. M.
AUTHOR: Semenov, A. Ye
TITLE: New procedures for refining aluminum alloys
-A
SOURCE: Alyuminlyevy*ye splavy*, no. 3, 1964. Deformiruyemy ye splavy*
(Malleable alloys), 330-338
il TOPIC TAGS: aluminum alloy, abloy AV, alloy DI, atloy DIA, alloy AMg6, alloy
AK8, magnalium, duralumin alloy, aluminum alloy refining; bulk vacuum refining,
continuous chlorination refining, continuous filtration refining, granulated
magnesite refinin19, carnallite flux, cryolite flux, melt gas saturation, chlorina-1
tion bath, filtration tank
ABSTRACT: Laboratory and field experiments were carried out with alloys D16 and
AK8 to compare the effectiveness of flux and vacuum refining of these alloys in
the furnace to mixer stages of the casting process. Other tests concerned con-
tinuous chlorination refining and granulated magnesite filtration in the mixer
to mold stages. Vacuuming (720*5C, five minute 0.2-0.5 mm Hg, height of metal
column In crucible 100.t5 mm) waN effective in r4oving solid non-metallic Impurl-
ties, Its effectiveness Improving with higher Initial gas saturation levels
C.~5-320%i~pjri ties at 0.15 to 0.0% at 0.35 cc/lOO 9). Factory tests with vacuuming

ACCESSION NR: AT4037672
'(ladle capacity 2 tons, height of metal column 1000-1100 mm, 730-680C, 15 min.,
residual, pressurezI mm Hg) and the use of.f)ux (20-23% cryolite, melt temp.
700-730C, 2-3 k9 flux per ton of melt) confirmed that the former is moreeffective
(0.04% Impurities as compared to 0-30%); hence, continuous vacuum refining in the
ladle or placement of a vacuum chamber between furnace and mixer are recommended.
Gaseous chlorination (Mg6)ln the mixer proved unsuitable. However, chlorination
in a special bath placed between mixer and mold (see Fig. I in the Enclosure) re*-
duced the content of Impurities to 0.200 mm2/cm2 (compared to 0.284 without
chiorination; both samples p reliminarily refined In the mixer with carnallite
flux). Filtration through an Intermediate tank (see Fig. 2 in the Enclosure)
containing granulated magne 'Ite (diameter 6-10 mm; filtering compartment volume
1500 cc or greater) in liquid cryolite flux produ-ed the best results for dura-
:Iumin alloys; with liquid carnallite.flux this-meihod Was be!.it for AM96, and is
also recommended for magnallum alloys. Ill. L. Teytell, S. N. Ananlin,.N. M.
Babary*kin, A. M, Shumskly, V. 1. Kulakov, G. A. Kopylctov, M. A. Kryukov, 1. Yao
Zalltsrri4n, N. 0. Vinokurovo M. L..Vasilevskaya, G..S. Makarolf, A. M. Landa,
P. Ye. Khodakov, and V. V. Solovlyeva took part in varlous.aapects of the work*"
Orig. art. has; 4 tables and 2 diagrams.
ASSOCIATION: none
Cord 2
--7~77777-'

KHABAROVA, O~Ye.; ZASYPKP,,.YjA.;.,:SlMENOV, A.Ye.; PODSECRENOV, A.V.
[deceased
Characteristics of =elting and casting of the 7AD23 alloy.
Alium. splavy no,3:201-208 f64. (MIRA 17:6)
Hy 2M%
------ -- --- 199

8 (6) SOV/91-59-4-5/28
~AUTHORS% "Zaaypkint' Ve A. and Bukhmaht G. D., Engineer

TITLEs An Additional Steam Extraction on a AK-34 Turbine
(Osushchostvloniye dopolnitellnogo otbora pare, na turbine
AX-34)
PERIODICAL; Energetikq 1959p Nr-49 pp 7 8 (USSRY
ABSTRACT: The authors describe the addition4l ste4m extraction for
regeneration purposes on a 34-megawatt impulse reaction
Siemens Schuckert turbine, having one Hateau stage and 26
reaction stages in the high-pressure seotione The steam
reentry from the high-pressure section ftnto the low-pressure-
section is performed by two 1000 mm pipas. The turbine had
an uncontrolled steam extraction after -the 23rd high-pressure
reaction stage at 2.1 atmospheres for Mating the condensate
to 100-10500 which entered the deaerato.re, An additional
steam extraction at 16*e atm was inatalled. in 1954, In 1958P
the authors suggested a new steam extraction after'the 26th
Card 1/2 stage of the high-pressure section at 0.55 atm and 830C for

SOV/91-59-4-5/28
An Additional Steam Extraotion on a AK-34 Turbine
a now PN-130-3 condeneate heater produced by the plant
"Komega". Thin leads to an increased steam consumption of
the 24tht 25th and 26th reaction stages,which in turn in-
creased the pressure on them. Calculations performed by
the Khartkovskoye otedeleniye Teentrallnogo konstruktorskogo
byuro (Kharlikov Branch of the Central Designing Offioe)
showed that the pressure increase did not exceed the nominal
stress in the base sections of the blades of these stages.
The condensate is heated by the new method from 350C to
730C whereby 1800 tons of fuel are saved. annually.
There is 1 diagram@
0_3 n In

(Steam turbines)

'Jim
90.6

ACC NRi AT602,4909 jV) SOURCE COM UR/298:1/66/000/004/0021/0025
AUTHORt Zalitsmani, 1. Ya.; Gmahko, 0. To.; Somenov, A a.; V, A-
I .
Vinokurov, No D,; ov' M. A.1 161!tMij, A. P _~8ozhsnokA,.,.
ORG: none
TITIZi Some aspects of the preparation of VAD23 alloy
f
SOURM MyuminiyeWe splavyno. 41, 1966. ZharoprochYV7* i vysokoprochr#ye splavy
(Heat resistant and high-strength alloys) g 21-25
TOM TAGS j aluminu:m" opper containing alloy, lithium corlitaining alloyl mane&-
2LOyjp 0
none c g alloy ),V.3 9", 0),
ontaining anoyp cadmium containin
~ 7-t
ABSTRACT: VAM3 a1loy belongs to alloys of the A:r-Cu-;Li system vith small admixtures
of Mn and Cd. Because of the loan of lithium from the melt during the preparation of
this &Uoy, the introduction of lithium,(and cadmium) was carkied out under a special
flux consisting of a outectia-mikturo of lithium and potassium chlorides. This flux
'was found to prevent the loss of lithium to a considerable extent; howoverp as the
lithium content of the alloy inereasoathis protection becomes less effective. Partic-
ular attention must be paid to the quality -of preparation of the rlux and to the manner
in which lithium is introduced into the melt (without disturbing 'the flux). The flux
has the disadvantage of being hygroscopic because of the LM preient in its composIT'.
tion,, and therefore must be used only in the liquid or freshly-remelted state, the
Card

L L698M6
ACC NN A%02490
liquid state being preferred. Refining of the a3-loy.with gaseous chlorine after the
addition of lithium insures the required purity of the ingots. Orig. art. haol 3919-
ures and i tables
SUB COJEs 11/ SUBM DATSI none/ ORIG RVI 001/ OM REIP 001
m

46987-66 BwvP(k)/9dTW/ZJ,,P(t)/ZTI 1JF(c) JH/JD
~jHI~JD
ACC NR,. A%Mm SOURCE.CODE1 UR/2S:61/66/000/004
CODE1 ~2M/~/000/004 P-61001
AUTHORI ftshko, Ot Zal'tanany 1. TA.; Vinokurov, N. D.; Sezenovp A. la.;
A-. Y13Lqp Ae~P*; M- --
ZasypkVij V. A.;
gin
,OROS none
TITLE& Process of'casting.AAM-al.1 ingots
SOURCES Alyuminiyevyya splavyj, no. 49 1966. ZharoproohWe i vysokoproohnyye splAvy
(Heat resistant and high-strength alloys)s 26-31
TOPIG TAGS$ metal casting$ lithium containing alloyl aluminum alloy,, copper containing
alloy/vAm aluminum anoy
ABSTRACTS In elaborating a process for casting Ingots from V1=3 alloy by the contin-
uous methodp the authors studied the casting properties (tendoncy to form hot and cold
cracks) of this a3_1oyj established the temperature conditions of the casting, and do-
tezTdned the methods of protecting the metal during transit from the mixer to the crys-
tallizer and in the crystallizer. The chemical activity of lithium, which onters into
the Composition of the- alloy, made it necessary to protect tho alloy surface during
transit. Two methodstrere tested for this purpose, involving the.*so,of (i) sulfur di-
oxide and (2) a flux Qnsisting of a au~toctic n. ixture of Uth-j=~Ad potassium chlor-_
ides. Only the latter method gave satisfactory results. A temperature of 700-7300C
was found to be optimal'for casting. The quality of the ingots obtained was thoroughly

J, 4b967-66
.ACC Wt. AT6()24910
checked by analyzing the strudure of fr&oturooo microstruaturait density liquatiop-,
And mechanical proportion along the length and cross section ofthe ingot in the longi-
tudinal " trasverse directions. The elaborated casting procese,whioh inclild6sprotec-
tion of the metal vith a liquid flux on the path from the mixer to the orystallizar,
produced good-quality ingota. Orig. &A. has$ 3 figures and I table.
SUB COIS I II/ SUBH DAM none/ ORIG RM 002
Ccwd 2/2
Im

In
(m VVIryl P (WP'T rTjKC)
ACC NRs AT6024943 SOURCE CODE1 tW2981/66/000/00410291/0295
AUTHORS Zasypkin, V. A.; Semenovp At Yeo
ORGI none
TITM Behavior of dissolved gases during Matallization of aluminum alloys
SOURCE:- Alyuminiyevyye splavyp no& 4, 1966, ZharoprochWe i. vysokoprochnyye splavy
(Host resistant and high-strength allpys)p 291-295
TOPIC TAGSj aluminum alloy propertyp hydrogen, metal orysta1jizatPn
MTRACT: A comp ative study of the gas turation of Pk6j V9
ar 1; V9~1 and other
a
OY I ydrogon is a
ll s in ingot or liquid form showed thatyl- Imost completely retained in;
the metal during orystallization3 even though no macroporonity was obsorvod In the
structure of tho,ingots. Apparently, all of the hydrogan io present in a ouporoatu7
ratedtolution. The amounk of retained gas deponds mainly on -the cratallization rate,
the alloyp init 1 gal/tpaturation and other factors. It was found that in
Al-;g6., ]LMO V93., V95o AL K16 dnd other alloys, as the gas content increases within
a certain range, the ih-falmis-Fof the grain boundarias changos.as a result of the evo-
lution of hydrogen,, and interlayors and discontinuities of varlous sizes are formed.
In a:certain range of gas.concentrations as the lattor increasos
# the grain size di-,:-
minishes. On the basis of the studyo the. distribution of the j,,as during crystallizi-
tion of aluminum alloys was determined as a function of the Initial gas sattwation br
Lcord 1/2

-it -1.6-972-66 ---- ----
0
ACC NRi AT60p4943
the liquid metalp and is shown in Fig. 1.
d,
Fig. 1. Distribution of gas during 3f
.crystalLization of aluminum alloys
4
In the latter$ portion a-b indicates interlayers of second phases and of the gas dis-
solved therein; portion b-o shows the stage of dissolution of hydrogen in the solid
solution and the formation of intrablock porosity; portion C.-d is linear and charac-
terized by the liberation of gas along grain boundaries with formation of nicropores.
and discontinuities; d-e denotes grain refining due to the ii3olation of the growing
crystals from the liquid phase by.the liberated hydrogen; a-f characterizes the ap-
pearance of cellular porosity and macroporosityl, and point f corresponds to the maxi-
raum quantity of hydrogen capable of assolving in the molt pttho crystalIlzation
temperature.
Orig. art.1hass 2 figures and 1 table.
S CODES 11/ SUBM DAM none/' ORIG REFS 0051 OTH REFS 002
C rrd 2 2
;

BzLKUj,.,P*V.j ZASYBMIJ V.I.
Postal service aid computer --technology-aid-indusirlal =ent, - -
Vest* aviazi 23 no.3:7-8 Mr 163. (IMU 16:3)
1, Nachallnik vychial-itellnogo tsentra, TSentraA'*)go proyektno-
konstriiktorako 0
go i takhnologicheskogo byuro lbskov* go oblastnopo sovet&
narodnogo khommstva (for Belkin)o 2, Glavnyy tazh. ~bskovskojgo obl*3t-
--nogo upravleniya avyazi (for Zaaypkin).-
(Postal service) (Industrial management) (Electronic computers)

GRIG(RlYEVA,--B-PMffTM, A. GO.,kand, mad. nauk; MAPEVAN, A. re.,
podpolkovnik meditsinakor aluzft) kand. mad. nauki SHOMMMOV,
1. F,, podpolkovnik maditainskoy sluzhby; CHIRKOVA, 0. 0.;
ZASIMNY V. Ya., starshiy laytenant meditsinskoy aluabby
Effectiveness of Itmin4zation with live vaccine agninst parotitim
in the focus of infection* Voen.-mad* zhur, no.12:163. D 161.
(KMA 15:7)

7JIMPM, V. YA. (First Meut~enant -of the Medical Service) GP. IG CE I YLVA-
_A...G., (Can&tdata of Yadical Sciences, 'U autezznt Colonel
of the Madical Service); .-MRAFFMAR, A. YE., (CandidaU of Wdical
Sciences); SHCHMBAROV, 1. F., (Ueutenant Colonel of the Wical
,Service); CHIRKOVA, 0. 0.
"The Effectiveness of I=utization with IAve Umps Vacoine in a Focus of
Iafeation"
Voyenno-Maditsinskiv Zhurnal, No. 12,, December 1961, pp 62-73

"OV /139,-58-5-11/35
AUTHORS.-Presnov, V. A. and Zasypkina, A. R.
TITLE- Investigation of oritact Be ben a Semi. c:ondu(%, tor and a
Metal with an Intermediate Insulating Layer (Issledovariiye
koAtakta poluprovodnika. s metallom s promezhutochnym sloyem.
izolyatora)
PERIODICAL: Izvestiyla vysshikh uchebnykh zavedeniy, fizika, 1958,
Nr 5, pp 55-59 (USSR)
ABSTRACT: This paper was presented at the Conference of Higher
Educational Establistments on Dielectrics Emd Semiconductors,,
Tomsk, February., 1958. Rectifization of an alternating
current is possible at a contact of a semioonduotor with a
metal, the two being separated. by a thin lijyer of a dielectric
(Refs:1-4). The authors investigated syst,ams consisting of a
germanium semiconductor (5-7-c'-,cm resistance, dimensions
5 x 5 x 2 mm), a lacquer layer and a metal plate (silver,
magnesium or'lead). The germanium surface was polished and
etched in hydrogen peroxide. One side of.the germaniim plate.
was painted with--a layer:of polystyrene., linoxyn (oxidised
linseed oil) or vinyflex lacquer. The other side of the ger-
manium, plate had a layer of tin deposited on it to produce an
ohmic contact. Measurements of the distribution of potential
Card 1/4 in such systems showed that the potential falls mainly (190% and

-MIR
SOV/1;49-58-5-11/35
Investigation ofthe Contact Between a Semiconducto3! and a Metal with
an Intermediate Insulating Layer
more in the blocking direction) at the rect'i.fying contact.
Volt-ampere characteristics vere.obtained for the samples
studied. The re~~tification coefficients we3~e of the or-der
of 100 to over 10 000 at 1 V applied volta,go. The lacquer
layer thickness, found by weighing, was of i:;he order of' 0.001cm.
Rectification in many eamples was still qui!;e high at volt-
ages of 10-30 V. The dynamic characteristii*,s show a loop in
the blocking direction (Fig.2). The static characteristic of
a sample covered by linoxyn lacquer and with a lead electrode,
is shown in Fig.3. The forwa-rd (condu!,,ting) direction corres-
ponds to the positive potential an the metal. The effects
observed do not depend greatly on the work function of the
materials in contact. The dynamic and statLe characteristics
of the same sample with electrodes of silvex and magnesium
differ somewhat in the forward direction (Fig.4). The lacquer
films were found to have defects (pin-holea>. Schottigr (Ref.
17) indicated that such defects may play an important role in
Card 2/4

W/1:) -58-5--11/35
Investigation,of the Contact BGtween a Semiconduotovand a Metal with
an Intermediate.insulating Layer
ification at insulating barrier layers...'but this is dis-
rect
puted~by other authars (Refs.3-8). The present authors found
that the samples with dofects in the lao uOX filmO3080 .eas
considerable rectification coefficients Zover 100 if the
electrodes are of the pressure type. Deposition of electrodes
by.e.vaporation in vacuo lowers the rectifics.tion coefficients
-Yery- -a-~.Thepe coeffioients:are a4so lowered if,
considerably
the press-on electrodes are placod on such parts of the
lacquer film which are free of defects. Very high rectificat-
ion coefficients (of the order.of several thousand) were also
obtained in systems with an insulating KC1 emd S layers d9pos-
ited in vacuo on germanium plates. Mercury electrodes were
used in this case a:j~d the optimu-m-hickness of the dielectric
was found to be 10-"'t cm. As in the case of the lacquer films,
vacuum deposition of electrodes produced a lowering of the
VeU'VIZIc~ation coefficient. Rectification vl.a an insulating
layeriwas dealt with th6oretically by Pokar and M6'tt in 1939.
Their.work was extended by Gilinskiy and Choglokov.(Ref.5),
who allowed for the fall of potential aoros~~ the cemiconductor.
Conduction through a very thl,n dieloctrie% it possible by means
Card 3/4 of t he tunne.1 offect, Thorn I In,jection of elodtrons into UP

SOV/1:3~9-58-5-11/35
Investigation of the Contact Between a Semi condll.ctox, and a Metal with
an.Intermediate.Insulating Layer
conduction band of the dielee-tri,~ is'possible at larger di-
electric thicknesses. The high field strength in the di-
electric mr-y also contribute (Rei.6) to the rectification
mechanism. The present authors add that -the formation of a
p--n junotion. in the semiconductor is also possible. The
energy bands in the semiconductor next to the dielectric may
be so deformed as to produce a p-layer in an n-type semicon-
ductor. There are 4 figures and 8 refereni~~es 4'of which
are
-
Soviet, 2 German, 1 Dutch and 1 Soviettranslated from English.
ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri. Tomskom
gosi:niversitetp, imeni V. V. Kuybysheva (Siberian Physico-
Technical Instit-ate at Tomsk State University imeni V. V.
Kuybyshev)
S.UBMITTED: March 20, 1958.
-Card 41/4

1100 66599
SOV/139-59-3-7/29
AUTHORS: ~Presnov, V.A., and Zasypkina, A.R.
TITLE: On the Mechanism oF7e_c_41,i_f _ica_t_i`o-n of an Alternating
-Current at the Contact of a Semiconductor with. a Metal
with an Artificial Barrier Layer EBetweon Them)
PERIODICAL: Izvestiya vysshikh uchobnykh zavedeniy) Fizikaj
1959, Nr-3, pp 41-44 (USSR)
ABSTRACT: More than twenty years have passed sinco the classical
experiments of V.P. Zhuze (Ref 1) on,reotification at a
semiconductor-m'etal contact with an artJ.ficial dielectric
barrier -layer between the semiconductor,and the metals
but there is still no agreement on the nechanism of this
rectification. The present authors suggested (Ref 9)
that the effect may be explained by fornation of a region
with low current-carrier density in the semiconductor next
to the dieleCt3?iC barrier layer. The applied external
voltage would then distribute itself be-;ween the
dielectric layer and the.low-carrier-density region in the
semiconductor. This system is known to possess rectifying
Card properties. Unfortunately, Ye.I. Chegl6kov and
L.N. Khlebnikoira (Ref 10) showed theoret'ically that
formation of.such a low-carrier-density region is unlikely.

66599
SOV/139-59-3-7/29
On.theMechanism of Rectification of an Alternatin;:j Current, at. the
Contact of a Semiconductor with a Metal with an Ar-tificial Barrie~-
Layer- ~',Vetween Them] ------
'Cheglokov and Xhlebnikova.showed also that if an increase
of the electrical conductivity of the ba:~,rier layer in
.,strong fields is allowed for, rectificatlon could be
-,expected even if no low-carrier-density :iegion was formed
in the semiconductor. For one direction of the applied
external voltage v -the contact potentiUl vk 'will act
in the same direction as v, i.e. the tot-al field will be
E = (v + vk)/Lj where L is.the thickneas of the
dielectric barrier layer. For the opposite direction of
the applied external voltage the contactipotential Vk
will act in.the direction opposite to thzit of v, i.e.
the total field will be E = (v - Vk)/L. In the first
case the value of E..may exceed the critical electric
field Ek in the dielectric. layerg abovo which Ohm's -law.
is.no longer obeyed. This will produce a rise of the
electrical conductivity (the forward direction). In the
second case the elec":r.-Leal conductivity will not rise, and
Card 215 this direction can be i,,-onsidered asithe inverse direction.
Defining the'rectification factor I by

66599
SOV/139-59-3-7/29
On the Mechanism of Rectification of an Alternatiri-g Current at the
Contact of a Semiconductor with a Metal with an Artificial Barrier
Layer [Between.Them)
~K Iforward/Iinverse) when Vforward ~2'vinverse) the
following law was; obtained byCheglokov,and Xhlebnikova:
2~,
Vk
kT
K
where vk -is the contact potential at -the metal-
s emiconduc tor boundaryq a is~ the exponent in Poole's law
(a, = cro exp(aE), where a is the electrical conductivity-
L isthe thickness of the barrier layer, e is the
electron charge, k is the Boltzmann constants T is the
absolute temperature. Rectification in such a system can
be expected in a limited range of external voltages,since
when v >> vk the contact potential can' be neglected 'and
no rectification can occur. Experimental verification of
tho above theoretical results meats with several
difficultiess (1) secondary effects, and (2) choice of
Card a suitable dielectric and a suitable method of deposition
3/5 of a continuous,dielectric film on a.semicondnctor surface

66599
SOV/139-59~-3-7/29
On the Mechanism of Rectification of-an Alternating Current at the
Contact of a,Semiconductor with.a Metal with an ArtifIcial Barrier
Layer. Detween Them]
When mica was placed between & metal and a semiconductor,
asymmetry of the volt-ampere characteristics was observed.
If the effect of high-voltage polarization in mica was
allowed for7 the volt-ampere character�stics became
practically linear (ef Fig 1 which shows a volt-ampere
characteristic fora system consisting of platinum)
10-1+ cm thick mic& and n-type germanium). Similar
behaviour was observed for a platinum-glass-n-Ge system.
Here again, wh6n high-voltage polarizat.i.on was excluded,
the volt-ampere characteristic was prac!;ically linear
(Fig-2). When a layer of lacquer was placed between a
metal (e.g. Pb) and n-. or p-type ermanlum, clear
rectification was observed (Fig 35. Sut,,,h rectification
was,obtained with such lacquers as shellac, polystyrene
and linseed-oil, etc.,' and also with la,7ers,of KC1, NaCl
Card and S. deposited by vacuum evaporation. Rectification.
V5, factors of 101+ - 105 were obtained using n-type germanium
monocrystals:. When p-type germanium wa.13 used, rectifica-
tion factors. were much smaller. Electrolytic s

.4- 1 It
66599
SOV/139-59-3,-7/29
On the Mechanism of Rectification of an Alternating Current at the
.Contac of a Semiconductor with a Metal with an Artificial Barrier
Layer ~Bctween Them)
showed that the lacquer films used by the authors always
had a number of micropores. This means 'that
rectification occurred at point contacts. Confirmation
of this conclusion was obtained by studies using p-type
germanium and metals (Mg, Ag, Sn, Pb) which gave
different potentials for contact with gamanium.
There are 3 figures and 10 references, of which 5 are
Soviet, 2 English, 2.German and 1 Dutch.,
ASSOCIATION: Sibirskiy fi*ziko-tekhnichoskiy institat pri Tomskom
osuniversitete imeni. V.V. Kuybysheval
Card 515 Mberian Physico-Technical Institutep Tomsk State
University imeni V.V. Kuybyshev)
SUBMITTED. August 28, 1958

all

-
maniu-
,,The joOd rectifier properties of the silver-
olystyrene rarnItsh-
er
m
-
p
g
and the mercury-KCI-germanium system"
Report pneented at a Confei-enee or, Solid DIelectrieri aud'Sem1torAuet6n,
Tomsk Polytechnical Xxxt., ' .1-8 Feb. 580
'58, No. 7,0- 83-86)

al 1~ I 3-IM3.7n

_Iz AsY, PYTN it f pat-
"The, Physilco-chom.1cal iliature of An"ibactorial Action," Idol,hi-t., 10,
'03 0
5"t ;9115;
Mbr. Phyaico-Chemlcal Lab.Y~Dcpt Biochcm .1,11crobes, All-Union Inst.
Exptl. Tbed. V MOSCOVIP -1945-~-

1,9
PAS;SVIIY, A.G.; ZASYPKINA..P.S*
Blectrometric titration of,panicillin. Vop.med.lchim4 1:94-101 151.
(MIRA 11:4)
1. Lnbaratoriya fizicheakoy,khimii Veesoyuznogo nnuchno-issledovntell-
~kogo instituta -po penitsilinu i drurim antibiotiknm, MoskVA.
(MMTR60EMICAL ANALYSIS) (PENICILLIN)

~,~ZASYPKIXAo F,S,j SERAVINAt L.B.; BRUNSs B.P.
Physical and chemical methods for determining an#biotics, Part 7:
Colorimetric method for determining oxytetr6cycline, Med. prom#
34 no. 10:31-34 0 160. (KLU 13: 10)
is Voosoyuznyy nauchno-issledovatel'skiy inst itut antibiotikov.
(TERRAMYCIII) (COLORIMETRY)

MWE-Z, 3010'111

ACCESSION A:' ARWI5693 1/63/000/013/0355/03V?
S/008
SOURCE: RZh. Khlmlyao-Abs. 23K85
AUTHOR: Zasy*pkina# V. So; Klyuchnikov, No G#
TITLE: Formation of a protective film on steel In the presence of dlcy~lphexyl-j
amino
ni-trito-.
7
-*-,ped- M V-- U
-CITEDIOURCE.. 0 ho',;zapi--Md'skw gos t7l Lon n4$ noo
1961
-.42
-48
TOPIC TAGS: corrosion, corrosion Inhibitor, steel corrosion, protective film,
dicyclohexylamine nitrite
ABSTRACT: The effect of vapors of dicyclohexylamlne nitrite on:the-process of
formation of a protective film on stool-10 and 45 was studied by an optical me- I L
thod. It was found that the vapors decreased the thickness of the natural loos(I
oxide film and transformed it to a more stable state. An electronographic st dy
of the steel surface In an atmosphere of dicyclohexylamine nitrite vapors shoured
that a magnetic oxide of iron, F0304 Or '(-Fe20 ) Js formed on the steel surface6
The.vapor phase of the Inhibitor protects the sicel only.when the natural oxide
film Is present on Its surface, in Its absence and also.in the absence of oxygen;
Card 1/2,

'MA#_j%V.j. GIJPXINA, A.N.
ALMANDROVA, T.S.; XJTJIYUNJVAp Yool*; R
Two bacteriologically confirmed cases of listerlosIs in nev-
born infants. Zhur. mikrobiol., epid, I Am=, 43.no, lt
142-3-" Ja 166. (MTRA 1911)
1. Tullska'ya oblastnaya Ban itam a-4-,pidcmIo1ogI chenkaya sttm-
tslyu, SubmitLed J=e 6, 1965.

POTUDINO M.I. (deceased); ZALYPNINA, Z,V.
Case of listerellal angina in Tula Province. Zhur. mikroblol.
epid. i i==n. 40.no.5.-151-152 My 163. (MIRA l7t6)
1. IZ,Tullskoy oblast!-.i.*f-oanitarno-epidemiologicheskoy stantaii.

(ACCESSION NR: AR4015688 8/0081/63/000/023/0364/0354
SOURCE: RZh. HMmiya, Abe. ?,31C78
AUTHORt Zas chnikov. N. G.
layu
TITLE: Electrochemical studies on the Interaction of certain inhibitors with Iron, cobalt,
nickel and copper
:CITED SOURCE. Uch. zap. Mos. gos, ped. In-t Im. V. 1. Le.nina, no. 181, 1962, 108-116
TOPIC TAGS; electrochemistry, Iron electrode, cobalt electrode, nickel electrode, copper
electrode, cyclohoxylamine, sodium nitrite, othanolamine, corrosion, corrosion inhibitor i
TRANSLATION: Electrochemical measurements show that the Inhibitors being Investiga W-
(dicyclohexylamino nitrate, cycloboxylamIne, NaN02, mohoothanolamine, moaaethanolamine,
benzoate) have a special effect on the anodic process, retarding Its speed. Meassuromeata
of the electrode potential on steel-20 In a atream of hydrogen and in the absence of an
wddo film on the metal surfaceshow that these inhibitors otimulato the process of formation
1/2
-Cutd
"'A
.6