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1. Tesla Karlin National Enterprise', Moskva KImt, Prague,
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Ip
(A-AIC- SV-'T, Vol- 3, nc- 31, Jan- 1,-53) 700..;rad, yu;~Oslavia)
I
SO: Montuhly L 3t of Bast ZuroFean Accessions, C, Vol. 3 rio. !;, 1,11-y lcll,', /Uncle
I ~ ~L,f
S-sir- ry r-r. r r i 11 1 1 i " ... .. , -T, I
SO
Sol
SOU j:,-jt,-jjjj
if
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wool), -A lot*" It 4mv Jai
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9 It cr it w ce 'K 1 FA
12 it a
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100
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KOO
ZINTSCHINISKY, A.F.,
-) . 666-675
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vestilgated and a maximum response found at 642 ma. It is shown thot it is very &Lf-
ficult to obtain a blocking-layer photoelectric -effect with a cuprite crystal. The
photoolectric effect varies with the thickness of the crTstr.1 in a complicated manner.
(See itlso Abstract 2227 (1934).) H.J.H.S.
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---- --
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A,, takhn.rade
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t red.
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Wzbekistan-4conomic conditions)
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3IYAVULLAYLMr.,S.K,;,-MOR, A.B., red.; MWSKIY, P.A,,,. takhn.red.
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Golodnaya Steppe] Vashneishie vaprosy stroltells~Ta i
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SSR,-1957.,. 34 p. OURA 12:2)
1. Chlon-korrespondeAt Akadenii stroltellst*a I *rkhitektur~
SSSR (for Ziyadullayev).
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42m15
7M.14
AS
Z Lyadullqvv, S K
Naradvffe khozyaystvo Uzbekskay
SSR 'The national economy of Uzbek
S3Rl Tashkent. Clasizdat UzM.
1-~58-
ve illusq tables*
.jAb. bAs-, 1958
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q :01peju-t-14.
AUTHOR: lalavanov,, V.
nom
ORG:
TITLE. Caaracter5stics of p-Irulb diodes at high injection leviAs
SOURCE: iadiotekhnikm i ele'~ ia, v. 11, no. 2, 1,966, 355-357
TOPIC TAjS- diode, semiconduotor diode, 1>)m- Junction
%BSTRACT-. The results of an experimrintal investigation -ire reported, of p-rnsb diodail
havina d~ff-rent bave th1c-