SCIENTIFIC ABSTRACT AKHUNDOV, D.S. - AKHUNDOV, G. A.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 5, 2000
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

AKHUNDOV, D$h.S.) Cand Agr Sci - (diss)
"Effect of
corn hl~..d conditions maintenance n the
M~~T-
I
fattening of a~W ." Mos 1958, 22 PD. (MOs
Vet Acad of
5- Ygirem) lhO copies
Min of Agr USSR. Chaix
(KL, 21-58, 91)
- 49 -

TissR/Farn 1mi=ls. Poultry., Q-3
Abs Jour P., o-L" ~2iur - Biol., No 1, 1059, 2,1,41
Author A"al
Inst of Maizo on the Fa-%',tcninr; of Cockcrc:LG.
ts(.,VoOstvo, 1958, IT,-.) I,
Orig Ptib I't 4L
Abstract In tlic Torailinskaya Poultry Plant,
cockerels werc: dividod
intO t170 LXperimontal Lroups. Mic control
cock~--ri:As wru
-c(1 with ' ed mUons, ail-O cxperixiontal o,ics V-~ru
.L fix
fecl with a ration in vjhicL th;,: Uain part vas
rcp1aced by
50 [;rwas of mize kcr'!,~Is - Vac nutritive-ness of
'both ra-
.11 s was tho, same. 16 days of fattenisx, the incre-
'ior L3
ment iii wci&it in t1ho control broup was 371 UaMs,
a-,2d in
tlic. experimental Ewou.-L, 565 L;i7w:is; the outley
of fecd-
stuffs par kg of incrcm,::iA il;2 ii-Aght anountod
to h . 31 R"G
for Unc first group au com,)arucl vith 2.83 kg for
thc sQ-
c6nd. Li another xqj)oAmcW,;, `che nean dmily voijit
Card 1/2

AMMMV, R. B.
" - , " -~ ~'~ - ~17~~A't-
Apparatus for controling the self-starting conditions of
as7nahronous
motors. Tru4v Inst. energ..AN BSSR no.6:228-231 '58.
(NIRA 13:2)
(Blectrio motors, Induction)

25 (1)
AUTHOR: Akhundov,_E., ., Candidate of Technical
SOV/105-59-6-19/28
-To-re-H 0 a ~s
TITLE: On Problems of Methods of Technical and Cost
Calculation in
Power Industry (K voprosu o metodike
tekhniko.-ekonomicheskikh
raschetov v energetike)
PERIODICAL: Elektrichestvo, 1959p Nr 6, pp 81 - 85 (USSR)
ABSTRACT: In this paper, which is offered to discussion, an
attempt is
made to generalize existing methods of technical and cost
cal-
culations and to draw several conclusions, which may still be
debated. The author is of the opinion that in this way it
will
be easier.to arrive at favorable variants. The concept of re-
demption time which is widely used in technical and cost cal-
culations does not directly characterize the redemption of
ad-
ditional capital investments if different variants are
comparedg
and it may serve only as a convenient quantity in
calculations.
The method presented in this paper permits the selection of a
certain redemption time according to the data resulting from
the first year of operation of the assumed variants in depen-
dence of the lifetime, the coefficient of the annual revenue
of
Card 1/2 capital investments and the reduction of running
costs. The ad-

on Problems of Methods of Technical and Cost
SOY/105--59-6-19/28
Calculation in Power Industry
miasible limit values of the calculated redemption period are
mainly determined by the assumed coefficient of annual
revenue
of the capital investments. The author is of the opinion that
it is necessary to give this coefficient a scientific founda-
tion and to standardize it. The range of values for this
coef-
ficient is found to.vary widely with different authors. It
may
be assumed that it is between 1.1 and 1.2. If the objects
have
only a short lifetime and if material reserves available are
abundant, it may be ignored. There are 3 figureF. 3 tebles,
and 3 Soviet references.
ASSOCIATION: Institut energetiki AN BSSR (Inst-ituteof
PomerEngineering of the
Academy of Sciences of the BelorusskxSSR)
SUBMITTED: October 22, 1958
Card 2/2

Consideration of construction time in
technological cost accounting
of electric power production. Trudy Inst. energ.
AN BSSR no.9:135-
140 159. (MIRA 13:10)
(3clectric power production)

A V, B.B.; AYRUGM, A.Y.; B&API, Yu.S.
I jy.
Vtl Optimum power of a condensing electric power
plant
I operated on peat. Trudy Inat.energ. AN BSSR
no.10:12-21
'59- (MIRA 13:6)
(Peat) (Zleotric power plants)

Ir AKIUNDOV. S.B.; KAMNOVIGH, V-S-
Problem of the direct measurempat of relative
increments
in power installations. Trudy Inst.energ. AH BSSR
no.10:
81-97 '59. (miR& 13:6)
(Alectric power production)

-A Wil
AKHUIEDOV, E.B.. kand.takhn.nauk; KUqLMVICH T.S.,
inzb.
- ~j
i
Measuring i~-e-ralative inerleave of pmer
inotallationa. Rlek.
sta. 31 no.2:38-41 7 160, 04IRA 13:5)
(Power engineering)

AKHUNDOV, E.B., kand.tekhn.nauk (g.Minsk)
Problems concerning the methodology for engineering and
efficiency
calculations in power engineering. Elektrichestvo no-11:82-83 N
,61. (MIRA 14:11)
(Power engineering--Accounting)

-AKW )GV, B.B,4_red.; PERLIS, G.B.., red.;
DOROSTIEVICH, M.M.J, red.;
KLIONSKAYA, R.Lp red.; MARIKS) L.v red. izd-va;
ATLAS, A.,
tekhn. red.
[Automationp control, and increase in the
efficiency of
electric power systems]Avtomatizatsiia, kontroll i
povyshenir.
ekonordchnosti energoustanovok. Minsky Izd-vo
Akad.nauk
BSSR, 1962. 202 p. (KMA 15:9)
T
1. Akademiya navuk BSSR, Minsk. Instytut energet
ants
Olutomatic control) (Electric power p1

Vi~000
c t o r a:
SO UR C k:
1 T 1 1.1i
t r a
rnat,,on Int(i a c:,i~~L,;
Cor6 1/2

ACCESSION NR: AP4038886
this operation. ~A transistor-ize& comparison device yields
the time intervals
proportional to the running value of the input voltage A
special transistorized
gate is controlled bv the comparator p,.6Ees. anc. ;,rnerator
or. a-d
'att e r e S C'. 2TT -:)fi f
7- t"-! t
~Ucl rp.-; ambient temperature tip ic, 4""C. r r. 7 7
0. ~~. a. . YLas. 4 figures
ASSOCIATION: none
St"BMITTED.- 00
ENCL: 00
SUB CODE: DP, EC NO REF SOV: 00 3 OTHER: 000
Card 2/2

AEUNDOY. F.. imb. (Balm)
-~ - I '. $41%ic-b:- fo,r techn,ological contradictions.
Izobr.i rate. no.2:33-34
I.? '59. (MIRA 1213)
(Inventions)

A tlxrll -0- rJ-P C L, , i--. At I
AZIZBEKOV, Sh.A.; AKHMOV, F.A.
Petnvaphie characteristics of Triassic deposits of the
Sharur
Dzhullfa anticlinorlum. I)okl.AN Azerb.SSR 13
no.10:1063-lo67 157.
(MIRA 10:12)
1. Institut geologii.
(Nakhichevan A.S.S.R.-Geology, Sti~f~igraphic)

AKHUNWV, Y.A.;MAKEDDY, T.M.
data on the TSakari deposit of Iceland spar in the
Earabakh
Upland. Izv. AN A!-erb. SSR. Ser.geol.-geog. nauk
n0-5:51-56 159
(Karabakh UPland-Iceland spar) (MIU 13:3)

AKRUINDOV, F.Aq MAMEDOV, T.M.
Qualitative descriptiqn of Iceland spar crystals in the
northeastern
part of the Nagoxmo-.Karabakh Autonomous Province. Izv.AN
(Zerb.SSR.
Serogeole-geogenauk no.3:101-109 160. (N3RA 14:5)
(Nagorno-Karabakh Autonomous Province-Iceland spar crystals)

I I - a
AKHUNDOV, F.A.
Santonian globular lavas of the Martuni synclinorium which
include
Iceland spar, Dokl*AN A:zerb*SSR.17..no.4sZ89-292 61. . (min
14t6)
1. Institut geologii AN AzerSSR. Predstavleno akademikom AN
AzerSSR
M.A. Kashkayem. (Aucaaus--Lava) (Iceland spar)

AZMBIEDV. Sh. A., AMEMDOV, F.A.
Secondary processes in Triassic carbonate
deposits of
the Shurar-Dzhu:Llfa anticlinorium. Dokl.AN
A2erb. SSR
16 no.l:'45-47 160. (MIRk 13:6)
1. Inntitut, geologii AN Aserbaydzhanskoy SSR.
(Azerbaijan-4ocks, Carbonate)

m
AIKH .; WIEDOV. T.M.
Patrography of Santonian volcanic rocks enclosing Iceland spar
in the Mdrtuni synolinoriu.m. Uch.zap. AGU. Geol.-geogooer..
no.6:3-19-128 159.. (MM 15:9)
(Karabakh Upland-Petrology)
(Karabakh Upland-Iceland spar)

AKHUNDOV, F.A.; MAMEDGIVV T.M.
Genesis of Iceland spar associated with the basic
Santonian
effusions in the Martuni synclinorium. Uch. zap.
AGU. Ser.
geol. geog. nauk no.1:19-23 161. kMIRA 16:8)

AKHUNDOV, F.G.,
Effect of different.
amounts and the time of application of mineral
fertilizers'on th6 cotton yield in.some soils inthe Aras foothill
plain. Izv.AN Azerb.SSR.Ser.,biol.i med.nauk no.3;93-97 162.
C ~. (MM 15:9)
(ARAS VALIYY-COTTON-FERTILIZERS AND MANURES)

GUSEYNOV, R.K.; AKONDOV, F.G.
Effect of liquid and concentrated nitrogen
fertilizers on the
growth, development and nitrogen accumalation in
the cotton
plant. Dokl. AN Azerb. SSR 19 no.7:61-63 163. (MIRA
17:12)
1. Institut pochvovedeniya i agrokhimii AN AzerSSR.

0
AXHUNDOV, P.M.
Some data on a peculiar representative of Necromites nestoris
Bag. 1k
of the order of pinnipedians. Izv. AN Azerb. SSR. Ser.
geol.-geog.
nauk no.'lt73-86 160. (MIRA 13:11)
(Pinnipedia, Fossil) I

BOCHAK-ABRAMOVIC1.1 I AKWDOV, F.M.
Fossil camels Pdracamelus gigas Schlosser in Azerbaijan. Izy.
AN Azerb. SSR. Ser. geol-geog. nauk no*6*--~5-50 160. (MM
14.-~)
(Izerbaijan-Camellat Fossils)

AKHUNDOV, F.14,
~brphological differences between the Necromites
Nestoris and the
family Semantoridae (Mammalia.,Pinnipedia). Izv. AN
Azerb.SSR. Ser.
geol.-geog.nauk i rafti no-3:9-14 163. (MIRA 16.11)

ALIYEVI A.Ro. dotsent; BURTIKOVA, T.A., kapd, -medo.zaakI
AKNUMV, F.M.
Some hemodynamic chaviges during M.A.
T~f*hLbqohev'q.-oom'bbined
analgesic anestheol'; Azerbaid6. M~ed. zb. 6204-j ''J'6163 N
1. 1z fakulitetskoy khirurgiohookoy kliniki
leohebno-profilakti~
cheskogo fakul'teta, Azerbaydzhanskogo gosudars+,vennogo
meditsin-
s1cogo instituta, imeni'R.Narimanovas

AKUND(YV, F.M.
1-11 -... q- -1- ~ I
Effect of various doses and compositions of
neuroplegic
drugs on the hemodynamic indices in analgesia.
Azerb. zed.
zhur. 41 no.3t47-54 Mr 164. (NM 17i10)

AKHUNDOV, F.M.
Changes in the functional state of the heart
according to data
of clinical electrocardiography during operations
performed
undor analgesic anosthesia. Azerb. mod. zhur. 41 no.
1l'--3-9
N 164. (MIRA 18:12)
1. Submitted Dec. 24, 1963.

fA KH UN Do V, F Tl -
Subject
Card 1/2
Authors
Title
Periodical
Abstract
AID P - 1888
USSR/Electricity
Pub. 28 - 5/5
Samorodov,_I'~ I. and Akhundov, F. M.--
Portable instrument for quick determination of the
power factor
: Energ. byul., no-3, 31-32, Mr 1955
: Two papers making proposals on this subject were
presented in the competition for the best suggestion
on the more economical consumption of electric power.
One of them, submitted under the title "Portable
Phasemeter-Tongs" was by Samarodov, I. L, the
other "Instrument Controlling Performance of Electric
Machines" J by Akhundov, F. M. The two authors pro-
posed comparable analogical apparatuses, and,so
were awarded a divided second prize. The underlying
principle of operation of these instruments is the
ferrodynamic phase-lag meter with a disconnecting

AZD(OV, B.A., kand-tekhn-U&ukL.AKHUN teldm.nauk;
---M_ ~, _ -
GUMMOV, F.G., kand.tekhn.nattk
Zlectrodynamic continuous stator brake for draw
vorks. TrudY
AzNII IN no.5:342-383 '57. (MnU 3.2-.4)
(Brakes) (Hoisting machinery)

AZIMOVp B#A.p kand. tekbn. nauk; AKIWNIW,-FIL, red.;
SHTEYNGELI,
A.S., red. izd-va; NASIROV, N.p teklm. red.
[Electric drivos for oil well drilling equiprwntIVoprooy
nefteburovogo elektroprivoda. Balm, Azerbaidzhanskoe 00*
Izd-vo, 1962. 395 P. (KIRA 15.81
(oil well drilling rigs-Electric driving)

/9
112-6-11843
Translation from: Ref erativnYy zhurnal, Elektrotekhnika,'1957,
Nr6, p. 9 (USSR)
AUTHOR: Abdullayev, G., Akhundov, G.
- ----------------
TITLE: Investigation of Conductivity and Thermo-e.m.f. of Some
Semiconductors
(Issiedovaniye elektroprovodnosti i termo-e.d.s. nekotorykh
poluprovodaikov)
PERIODICAL: Izvestiya AN Az. SSR, 1955,Nrl2, pp.3-16
ABSTRACT: Determined were the el. conductivity and thermo-emf of
the electron synthetic
semiconductors-SnSe and B1233, which were of interest because thin
layers of
these compounds are formed in selenium rectifiers, and PbS and
MoG2 (possibility
of using these natural minerals for transistors mere explored).
The measured
values of electric conductivity in lo-3 ohm7"1 cm71 units are:
SnSe from 5.128 at 200 to 166 at 3000
Bi2S3 from 0.2 to 77
PbS - from 107.6 to 1755 at 2900
MOS2 - from 0.1151 to 6.289
Activation energy values are computed. Curves of thermo-emf
plotted against
temperature for the above semiconductors are given. Bibliography:
4 titles.
M.A.B.
Card 1/1

j ~ 4 .
ABDULLAYN , G.B. 6AQWlr
V Z.,G,.A.,,, I&LITEV, M.G.
w 04 0,
Mechanism of intensive fiela effects in p-n
junctions..Dokl. AN
Azerb..SSR 12 n0-11:787-791 156. (MLRA 10-3)
1. Institut fiziki i matematiki AN A erbayazhanskoy-
SSR.
(Semiconductors3

AKHUNDOV, G~AA- ABDULLAIIV, G.B.
Studying the diffusion of thallium, tin, and indium in
selenium.
Dokl. AN Azerb. SSR 13 no.11:1145-1148 157. (MIRA 10:12)
1. Inatitut fisiki I matenatiki AN AzerSSR.
(ffelenlux)l (Diffusion) ' (Metals)

AKHUXDDV, G.A., Cand Phys Matb Sci -- (diss)
"Study of dif.0asion
------- 0.
Drocesses in selenium rectifiers by the
radioisotope met~iod."
Baku, Pub House of Acad Sci AzSSR, 1958, 9 pp
(Min of Higher
Education USSR. Azerbaydzhan 3tate Univ im
S.U. Kit-ov) 100
copies (FL, 27-58, 101) -
- 3 -

69395
SOV/137-59-4-8422
Translation from: R.eferativnyy Zhurnal, Metallurgiya, 1959, Nr 4, P
155 (USSR)
00
AUTHOR: Akhundov, G.A.
TITLE:
PERIODICALt
ABSTRACT-
Card 1/2
C
siori in Some Semiconductors and Semiconductor
Investigation of Diffu
Rectif ler
Uch. zap. Azerb. un-t, 1958, Nr 2, pp 21 - 26 (Azerb. r6sum6)
The author investigated diffusion of T1 and Be in Cd-"- loy,
diffusion
of Be inIInSeUd self-diffusion of Sn. For ihe c~e-fficlent of
diffusion
D of T1240-and Se75 in Cd-Sn-alloy (temperature of the experiments
was
1000, 1400, 17000) the following expressions were found -. DT, --J~ M
. Cd
- 6.8 exp, ( ~'7kT
- 1o-4 - 0.6 /kT), DSe --)- cdsn = 3.47 * 10-10 exP P) .1
In diffusion of Cd, Sn, TI in Cd-Sn-alloy and also of T1, Sn,,In in
semi-
crystalline Be, a linear dependence of the activation energy Z~ E on
the
atomic, radius of the diffusing elements was revealed. In the case
of Sn
self-diffusion at 100 - 21800 DSn --).Sn = 1.35 - 10-7 exp (- 0.27
/kT).
The authors studied diffu 'sion of components In T12Se and InSe
compounds
which were applied in a vacuum to a metallic backing. For Be
diffusion in

SOV/ 137-58-9-19704
Translation from: Referativnyy zhurnal, Metallurgiya, 1958,
Nr 9, p 225 (USSR)
AUTHORS: Akhundov, G.A., Abdullayev, G.B.
TITLE: On the Diffusion of Cadmium and Tin in the Cd-Sn
Alloy (0
diffuzii kadmiya i olova v splave Cd-Sn)
PERIODICAL: Dokl. AN Azerbaydzhan SSR, 1958, Vol 14, Nr 2,
pp 103-104
ABSTRACT: The determination of the parameters of diffusion
of Cd and
Sn in the industrial alloy of 321o Cd - 68 Sn (used in Se
recti
d and Sn 113 isotopes
fiers) was carried.out with the aid of C ~f 15
by the layer-removal method. Diffusion annealing was con-
ducted under vacuum for ZO-50 hours at 50-1600C. The follow-
ing coefficients of diffusion were found: cdCd~_ 4.43-10-8
exp
(-4500/RT) and cd Sn~ 5.92-10-7 exp (6700/RT) cn-i?-sec-1.
R. 0.
1. Cadmium-tin alloys--Analysis 2. Cadmium--Determination
3. Tin
--Determination 4. Cadmium isotopes
(Radioactive)--Performance
5. Tin isotopes (Radioactive)--Performance
Card 1/1

AUTHORS:
Akhundov, G. A., Abdullayev, G. B. 2o-119-2-2o/6o

TITLE:
Investigation of the Diffusion of Components in T1 2Se
by

Means of Marked Atoms (Izuoheniye diffuzii komponentov v

T12Se metodem mechenykh atomov)
PERIODICAL:
Doklady Akademii
Nauk SSSR, 1958, Vol 119, Nr 2,

pp 267 - 267 (USSR)
ABSTRACT:
The physical properties of semiconducting compounds strongly

depend on small and very small deviations from the stoichio-

metric ratio, especially on the surface of the
semiconductor.

In semiconductor apparatusi especially in
selenium rectifiers,

the semiconductor is constantly in
connection with a metal and

therefore a chemical compound
forms. The density and the phy-

aioal properties of this
compound determine the characteristics

of the apparatus. In
the thallium rectifiers the thallium is

in contact with
selenium and obviously a thin layer of Tl 2 Se

is formed. In
connection with the investigation of the physi-

cal processes
in thallium-selenium. rectifiers it was of inter-
Card 1/4
est
to investigate the diffusion of the single components in a

2o-113-2-2o/6o
Investigation of the Diffusion of Components in Tl2Se by
Means of Marked
Atoms
Tl2Se-semiconductoT as function of the temperature. The
samples were produced by fusing thallium with selenium, the
corresponding weight ratios corresponded with an accuracy
of 2.10-4g to the stoichiometric composition. The synthesis
took place in a vacuum of 10-3mm torr.at a temperature of
4500C and lasted for 6 hours. From the thus produced Tl 2Se-
-sample some 12 mm long cylinders of a diameter of about 6mm,
wer produced and they vere ground on both sides with emery-
paper.On the one front of these cylinders the radioactive
isotopes T1 204 and Se75 were applied electrolytically. The
diffusion annealing was carried out in evacuated and sealed
ampoules at temperatures of from 150 - 300 OC it lasted for
15 - 20 hours. After annealing the number of impulses from
Card 2A the diffused through substances was radiometrically
determined

20-119-2-2o/6o
Investigation of the. Diffusion of Components in T12Se by Means
of Marked
Atoms
according to the method of the separation of thin layers The
formula for the calculation of the diffusion coefficient is
put.down and shortly explained. FromIthe temperature dependen-
ces of the diffusion coefficient D for the.diffusion of thalli-\
um and pelenium in T12Se the following equations,were found:
DT, _+ T, Son 1 A7 .,o_3e-o.6i/kT cm2see -1
.2
2.2'.10- 5e-0.58.kTcm2see -1
5 J,
D~O -)'.M2Se
i.e. for the diffusion of TI and Se the activation e*r&,
X and th6 constant Do are eqml respectively to 0.61 eV; 1.16.10
cm2 sec-l.and'0.58 eV;-2.25-10-5cm2sec-1. There are 1 figure
and I
reference,,'
card 3/4

20-119-2-2o/6o
Investigation of the Diffusion of Components in T12Se by
Yeans of Marked
Atoms
1 of which is Soviet.
ASSOCIATION: Institut fiziki i matematiki Al~ademii nauk
AzerbSSR
(Institute fbk Physics and VatbeqgLtics AS Azerbaydzhan
SSR)
PRESMMD: Octobdr*24, 1957, by A.F. loffe, Member, Academy of
Science, USSR
SUBMITTED: September 6, 1957
card 4/4

ABDULLAM, G.B.; MHUNDOV, G.A.; ALITEVA, H.Kh.
Rectifying property of PbS. Dokl.AN Azerb.SSR 15
no.11:999-1003
159. (HIRA 13:4)
1. Institut fisiki AN AzerSSR.
(Lead sulfide--Electric properties)

F

A

R

I
Ra

Ir

4

ve

r
:,av
fr
3 8 ;1 s
9
S
!g
one 6 r
Fri E f ij;43
rE
rl-
L"r.
v7l~E IL r.
F 'HIE Ist;
I - ; I:,;F, Fm
v F
1 - q 0
ri
IR
t; t N 13

o Iv
I/
8250
S/181/60/002/007/020/042
.9 ZA 0 V B006/BO70
AUTHORS: Akhundov, G. A., Abdullayev, G. B., Guseynov, G. D.
TITLE: some Properties of Single Crystals of Thallium Selenide
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, PP-
1518-1521
TEXT: In the introduction, the authors discuss results
already available
in publications on the investigation of thallium
selenidePsemiconductors.
In the present work, the method of prepar~ation of single
crystals of
TlSe.is discussed, and the results of investigation of the
electrical
properties of such crystals are given. For the preparation of
single
crystals, 99.989% pure thallium and 99-994% pure selenium
were used q1
(total weight: 90 gm). TlSe was obtained in evacuated
(lo-4torr) quartz
ampoules at 5000C in six hours. An X-ray analysis showed that
the TlSe
had crystallized in tetragonal form with the parameters a =
6.02 and
0 = 7.00 A. The single crystals were obtained by zonal
fusing. Fig. 2
shows the photograph of such a crystal in the form of a bar
15 cm long
and 1.5 cm in diameter. Fig. 1 shows a Laue diagram obtained
after seven
Card 1/3

825h3
Some-Properties of Single Crystals of
S/181/60/002/007/020/042
Thallium Selenide B006/BO70
zonal fusions with a horizontal zone shift of 10 mm/hour.
Identical
crystals were obtained by a zone shift of 6 mm/hour. For
horizontal as
well as for vertical zone shift the (001) plane was the
plane of growth.
The electrical conductivity and the Hall effect were
investigated for a
TlSe parallelepipedon of 3 - 4 - 15 mm3. Fig. 3 shows the
measured
temperature dependence of the electrical conductivity 6 for
four samples,
whose resistivities at 200C were 1, 3.2, 3.5, and 49
ohm.cm. It is found
that the a of low-resistivity samples first falls with
lowering of
temperature, then goes through a maximum, and again
increases. The large~r
the resistivity, the lower is the temperature of transition
from metallic
to the semiconductor state. The minima of the
low-resistivity samples lie
at 195, 165, and 1200C (curves 1,.2, 3). The pure sample 4
has no minimum.
The activation energy of this sample was determined to be
0.56 ev. Fig. 4
shows the temperature dependence of the electrical
conductivity, the
carrier concentration, and the carrier mobility of sample
3. It appears
that the decrease of 6 with increase in temperature up to
the teMDerature
of transition may be explained as being due to a decrease
of the carrier
mobility. In this range, the carrier concentration remains
nearly
Card 2/3

Photc con(.'Uz;-, ;Cld.
1057 160. 16 LO. 11:1051-
(11. T~'-. 14:2)
1. Institt:4L. fin-i-l-A Pn~'--.-viexio zJmdemikom '4'*
!,Zorssll Z.1. hhul~
(ThallilUA

S/137/62/OW/O0aW/1
A006/A101
AUrHOR: Akhundov,.G. A.-
TITLE-, On diffusion of components in T12Se and InSe and
rectifying on the
Se-T1,Se and Se-InSe boundary
C
PEUODICAL: Referativnyy zhurnal, Metallurgiya, no. 2, 1962, 39 -
40, abstract
2G303 (V sb. "Vopr. metallurgii i fiz. poluprovodnikov", Moscow,
AN SSSR, 1961, 100 - 103)
The author studied physical properties and diffusion of
components
In s;miconductor Tl~Se and Se-InSe compounds, and also
rectifying on the Se-T10 e
and Se-InSe boundary. %Se and InSe specimens were prepared by
synthesis. The
Se-rectifiers studied represented.a system of bismuthized
Al-backing, Se, T12Se
or InSe layers applied to the Se surface by sublimation in a
vacuum, and a.Cd-Sn
or Bi-alloy upper electrode. It is shown that for T12Se the
resistance as a
function of temperaturo has a metallic nature, and for InSe a
semi-conductor ex-
ponential form with activation energy of 0.1 and 0,03 ev
re:31)active2Y for Intrin-
sic and impurity current carriers. In all the experiments p-type
T12Se ' changed
to n-type after sublimation, and the Se and T123e boundary had a
pronounced
Card 1/2

30956
S/576/61/000/000/013/020
E036/E162
AUTHORSs h1,1nfJcLY-,-.G-,A..9 Abdullayev, G.B, Aliyeva, M.Kh.,
and
Efetdinovq G.A.
TITLES Preparation and investigation of the semiconducting
materials AgTeq Ag2Se' SnTe and CdTe
SOURCE: Soveshchaniye po poluprovodnikovym materialam, 4th.
Voprosy metallurgii I fiziki poluprovodnikov- ' polu-
provodnikovyye soyedineniya i tverdyye splavy.
Trudy soveshchaniya. Moscowq Izd.-vo AN SSSR~ 1961.
Akademiya nauk SSSR. Institut metallurgii imeni
A.A. Baykova. Fiziko-tekhnicheskiy institut. io4-io6
TEXT: To explain the properties of thin films of binary
compounds deposited on various substrates it is necessary to
investigate the bulk properties. In this paper the investigation
of thermal and electrical conductivities and the structure of the
following compounds are reported: Ag2Teq A92Se, SnTe and CdTe.
These compounds were obtained by fusing together the components,
which had been weighed to an accuracy of 2 x 10-4 g. The
synthesis was carried out by heating slowly to a temperature
Card 1/5

Preparation and investigation of ... S/5-76/00100/000/013/020
E036/Ei62
somewhat above th melting point of the refractory component in
an evacuated (10-~ mm Hg) quartz ampoule, This temperature is
maintained for about two hours and then further slow heat4ng up
to the melting point of the compound takes place. This final
temperature is maintained for eight hours. Homogenisation is
achieved by maintaining a temperature abGut 2000 above this
point
for two hours. After this the material is annealed at 700-800 OC
for several hours and slowly cooled,to room temperature. The
material was uniform, A92Te and A92Se being n-type whilst SnTe
and
CdTe were p-type. X-ray and electron diffraction gives the
following resultss 1) Ag2Te has a hessite structure containing
excess Ag, 2) Ag2Se has the naumannite stru,:--ture (B-phase),
and
appears from electron diffraction evidence to maintai\n this
during
6,2
vaporisation, 3) SnTe has a cubic lattice ~ ~L , Ito: and
does not dissociate durinj evaporation. 4) CdTa has a sphalerite
structure with a = 6A1 - and does not dissociate during
evaporation. Electron diffraction shows the condensed material
to be a mixture of polycrystals and orientated single =-Ystala.
Thin layers (--,0..5 u) are obtained by depcsiti-nj on glass
Card 2/5

30956
Preparation and investigation of ... S/576/61 000/000./013/020
E036/Ei62
substrates in a vacuum of 10-4 mm Hg. The densities were 8.08,
7-50, 6.02 and 5-57 ;/cm3 for A92TO, A92Se, SnTe and CdTe
respectively. Cold bands are deposited on the thin layers to
facilitate conductivity measurements. The room temperature
conductivities of 38 and 257 d-1-1 cm-1 of A92Te and Ag2Se
were an
order less than the bulk values. This is explained by the
enhanced importance of the high resistance grain boundaries in
the
thin layers. The temperature dependence of'the conductivity of
Ag2Te (curve 1) and A92se (curve 2) is shown.in Fig.1, where
the'
conductivity in dl-l cm-1 is plotted against lo3/T, where T is
the temperature in OK. Similar curves are obtained for large
samples. The sharp change in conductivity is due to a
polymorphic
.transformation. The results show that the p modifications of
Ag2Te below 1500 and A92Se below 14o0 are semiconducting with
activation energies of 0.13 and 0.09 eV. Above the polymorphic
transformation temperature the conduction is metallic. This
change c~orresponds to a change in the bonding from covalent to
polar. The thermal conductivities have not been reported in the
literature and are given in Fig.2, as-a function of
temperature.
Card 3/5

3()956
Preparation and investigation of S/576/61/000/000/013./020
E036/Ei62
Ag2Te and Ag2Se have minima at 140 and 150o, corresponding to the
polymorphic transformation.
There are 2 figures and 2 non-Soviet-bloc references.
M49
J/a
A9
Fig.1 IN-
59 2
40
Card 4/5
q a
F

331.12
S/638/61/001/000/039/056
P9cl / 3 -3 B108/B138
AUTHORS: Abdullayev, G. B., Akhundov, G. A~
TITLE: Investigation of diffusion processes in selenium
rectifiers
by means of radioactive isotopes
SOURCE: Tashkentskaya konferentsiya po mirnomy ispol'zovaniyu
atomnoy energii. Tashkent, 1959. Trudy. v. 1. Tashkent,
1961g 252-256
TEXT: The authors studied the diffusion of thalliumf tin, and
indium in
polycrystalline selenium; cadmium, tin, and thallium in a
cadmium-tin alloyp
and of thallium and selenium in T12Se. The radioactive isotopes
TI 204, SnI13-123, InI14, and Se75 were used, successive thin
layers were
removed from the initially 99.994% pure selenium. The
diffusion coefficiat
in selenium between 50 and 2000C are
"T1 - Se - 1-38-10- 6 exp(-0-35/kT) cm 2/see
Dsa --i~se ~ 4-78*10- a exp(-0.39/kT) cm 2/see

33112
S/638/61/001/000/039/056
Investigation of diffusion B108 B138
DIn -iSe 5-15-10-6 exp(-0.39/kT) cm 2/sec.
The low activation energies indicate that the atoms or ions of
Tl, Sn ' and
In are located in the hexagonal Se lattice and diffuse through the
intersticial sites. The temperature dependence of the diffusion
coef
cients of Cd, Sn, and Tl in a Cd-Sn alloy between 50 and 170 0C
are fi
DCd --~ Cd-Sn ' 4.43-10- 8 exp(-0.20/kT) cm 2/see
DSn --kCd-Sn ' 5.92-10-7 exp(-0.29/kT) cm 2/see
DTl---,' Cd-Sn ' 6-30-10-4 exp(-0.60/kT) em 2/see.
Activation energy increases with rising melting point, and also
with
atomic radius (linearly). It is suggested that a thin T12Se layer
forms
on the upper electrode of selenium rectifiers with Tl impurities,
and that
it acts as a p-n junotion in contact with the selenium. From a
apecial
investigation of rectifiers with a T12SO layer on various
upper-electrode
backings, the temperature dependences of the diffusion
coefficients were
found to be
Card 2/3

EAKHYSIJOV$ A.Ej AKHUNDOV) G.A.
Photoelectric properties of indium selenide , and
InSe - Se
barrier-layer photocells. Izv. AN
Azerb.SSR.Ser.fiz.-mat.
i tekh. nauk no./+:45-50 161. (MIRA 14:12)
(Photoelectricity)
(Indium Belenide)

3 7 93 0
S/161/62/004/005/019/055
13125/B104
AUTHORS: Guseynov, 0. D., Akhundov, G. A., and Abdullayev, G. B.
TITLE: Electrical and thermoelectrical properties of TISe single
crystals
PERIODICAL: Rizika-.'tverdogo tela, v. 4, no. 5, 1.962, 1206-1212!.
TEXT: Electrical conductivity, Hall effect, and thermo-emf of TlSe
single
,,crystals in the range 80-5701K were measured by a d-a
compensatilon method.
.,Electrical conductivity and Hall effect were measured with
molybdenum
probes, and the thermo-emf with the copper branches of
thermocouples. The
probes and thermocouples were contained in an externally cooled,
evacuated glass tube (jo-3 mm Hg) with inserted quartz tube. The
Hall emf
measured in fields of 1,800-10,000 oe varied from 0.02 to 13 mv.
Figs- 4ai
and 4b show the measured temperature dependence of electrical
conductivityl
and Hall effect in the range 80-57&K for specimens of 1,428,130,
and
1700 ohm-cm at 200C (curves 1-5)- In these'specimens, intrinsic
conductance arises at 240, 1801 60, -35, and -650Q. Below these
tempera-
tures,_specimens 1-3 behave like metals, whereas 4 and 5 behave
like
Card (1

S/181 04/005/019/055
/62/0
Electrical and thermoelectrical ... B125/B104
semiconductors over the entire temperature range. The temperature
dependence of electrical conductivity is chiefly determined by the
carriers
concentration. With rising temperature the Hall constant R decreases
sharply in the range of intrinsic conductance without losing its
positive
sign. The forbidden-Vand Widths determined from the temperature
dependence of conductivityzand Hall constant are similar for the
specimen
with the highest resistiv t' . The Hall mobility Ii of specimens
1-4y
determined by simultaneousi .measqrement of,d and R, reaches a
maximum at'
1 OOOK and decrWases as T-3/2 with ri-4ng temperature. The Hall
mobility of specimen 5-decieases monotonely as the temperature
rises from
100 to 5700K. The absolute value of the emf a decreases in the
range of
intrinsic conductance with,rising temperature. From 1700K downward a
rapidly increases with decreasing temperature. This abnormal
increase in
the specimens with the hig4~est resistivities indicates the
entratnement oV
carriers by phonons. The--e;ffeotive carrier masses were calculated
from
a and R and found to be m*'- 0-3 m and m* - 0.6 mob The temperature
0 P
dependence of the forbiddefirband width (in ev) is given by
4
A E - 0-57-3-9-lo-4T. The ~,6 figures. -.The most important English-
kil
language reference is: I 'Win&, G. Fisher a.'.E. Mooser. J, Phys.
Chemb
Card 2
7)

0546
S/249/62/018/001/001/003
OY If 1017/1217
AUTHORS: Mekhtiyev, R. F., Abdullayev, G. B, and Akhundov. G.
A-
TITLE: The technique of growing single crystals of GaSe and
the investigation of some or their
properties
PERIODICAL: Akademiya nauk Azerbaydzhanskoy SSR. Doklady, v.
IS, no. 1, 1962, 11-15
TEXT: A review is given of ten papers on the influence of Ga
andT1 on the electrical conductivity of Se,
on the photoelectric properties of Ga and other selenides,
and on the preparation of GaSe single crystals.
A new method is proposed for the preparation of GaSe single
crystals. The molten components in stoichio-
metric proportions are heated in a quartz ampule at 600* for
20 hours.The mixture is heated to 1060'C (GaSe
melts at 960*) for ten hours, then cooled slowly to room
temperature.The X-ray patterns of the synthesized
GaSe are identical with those described in the literature. A
special apparatus for gradual cooling is described.
The temperature is lowered first at the rate of 2*C per hour
until complete solidification, then at VC per hour
down to 900'C, and finally 25*C per hour down to 500'C. At
all stages a constant temperature gradient is
maintained. Heating can be regulated without disturbing the
furnace or the sample. The crystals obtained are
10 mm in diameter and 10 cm long. For both vertical and
horizontal positions of the ampule, the
plane of growth was (001). At room temperature, the specific
resistance and the concentration of holes and
Card 1/2

S/249/621018/004/00) /003
104011240
AUTHORS. Akhundov, G. A and Abdultayev. G B.
TITLE: TISe point diodes
PERIODICAL, Akadf miya nauk Azerbaydzbanskey SSR Doklady. v
18, no. 4, 1962, ~ I - t 3
TEXT. This communication gives the results of experiments on
the synthesis and rectifying characteristics of
TlSe with n-type conductivity. Four previous papers have dealt
with the physical properties of TISe crystals
with p-type conductivity. Single crystals of n-type I]Se were
obtained from p-typoTlSe by addition of 0. 1 wl
'% Gee and Sri to the melt. They were grown by vertical and
horizontal zone melting. Rectification at a point
was studied by means of electrolytically sharpened probes made
of 0-15 mm tungsten wire, 7he probe was
attached to the polished crystal face, at 90* to the C plane,
opposite the All of Sn base electrode. The voltage
and current were observed on the oscillograph screen at 50 cps
and photographed undei direct current The
samples were I x 2 x 2 mm parallelepipeds. It was found that
the suply of voltage at the point contact is
associated with shape effects. The passage of a larger direct
current improve-, the direct chmacteristic without
impairing the inverse. These diodes are rather stable but not
very good Thele ale 4 figures and I table
ASSOCIATION- Institut kiki (Institute of Physics)
SUBMITTED; February 10, 1962
Card 1/1

.Study of monocrystallin.n-TlSe. andits rectifying properties.
~G. ~A. A~khgnjq_q~&. G. B. Abdulayev, I. G. Aksianov.
(Not presented)-)
jdt'.of monocrystalline TISeq G. A' 4hundov,
Electro-physl~al propert
_G-_B..Abdulayev~ G. D..Gusaynov.% N. Kh. Aliyeva.
i.rvestIgation of the eleczrical_ properties of germanium telluriide.
3. Abdulayev, V. B. Antonov,' Ya. N. Nasirov.
-On studies of and some -properties of ImonocrystaMne GaTle 6nd GaS.
G. A. Akhundov G. B. Abdulayev, N. A. Gasanova, F. I. Ismailov.
"M map,
(Irvestigation of some physical properties of the monocrystalline
ccx.pounds CuSbS2 and CuSbSe2. G. B. Abdulayev, R. Kh. Kani., Ya. N.
Hasirov, T. G. Osmanov.
Report presented at the 3rd National Conference on Semiconductor
Compounds,
Kishinev, 16-21 Sept 1963

ISKENDERZADE.. Z.A,; ABDULLAYLIT, G.B.;
P-KIIUNDCIV,._G.A.
Some results of electrolytic cadmium deposition on a
selenium plate,
Trudy Inst. fiz. AN Azerb, SSR 1IM-18 163a (MIRA 1634)
(Gadidum planting)

L igoll-63- BDS/EWT(1)/EWP(q)/EWT(A) A.FFTC/ASD/ESD-3/IJP(C)
RDW/JD)(JG-
'ACCESSICN NR: AP3005313 S/0181/63/005/008/2087/X89
!AUTHORS. Aliyeva, Y. Kh.; Akhundov, G. A.
IT TLE - hof p-TISe
Kinetics of photoconductivity in single crysta
.SOURCE- Fizika Iverdogo tela, v. 5, no. 8, 1963, 2087-2089
ITOPIC TAGS: kinetics, photoconductivity, p-TlSe, T1, So, Sn, Ge,
Si, conduction
;bnnd, hole, thermal ejection. relexation, trapping level,
recombination, valence
;bend, ionization, accepto.- level
/N
,IV
1ABSTRACT: Photoconductivity was studied in single crystals of
P-TlSeyhaving a
ispecific resistance of 40 ohm/cm. The ohmic contacts vere of
goff, -deposited from
,vapor in an evacupted atmosphere. Oscillograms of relaxations
curves were obtained,'
;and these show two components (one rapid, one slow) in the
delcine of photoconduc- '
itivity. With increase in light intensity the arTlitudes of both
components increase
let first, then the slow one becomes constant. V~.*ith continued
increase in intensity
ithe slow component decreases and, finally, disappears. At low
temperatures (below
i-50C) the probability of thermal ejection of electrons to the
conduction band is
!less tbpn the probability of direct recombination nmth holes of
the vnlence band.
;In p-nSe the acceptor levels are nepr the conduction b3nd
and,apparently, are
i-Card-1/2-

L igoll-63
IACCESSIGv' NR: AP3005313
A
coT etely ionized at room teirpereture. The int7,:)duction of Sn,
GeVand SI~Ilrapuri-
I ?a nto single crystals of n-T:LSe has supplied witeripa for-further
investigation
'In this field. "The authors thpnic G. B. Abdulla.-av and S. L?.
Rv-*vh& for their
interest in the voik and for usefull advice. Oin-g. art. has: 3
fij~ures and 2
!
formulas.
ASOCIAT-Tait Institut fiziki AZ Azerb. SSR Baku (institute of
Physics, Academy of
iSciendes. Azerbailan. SSR)
SUBI.qTTEDt ISFeb63
SUB CODE: PH
DAIE ACO: O6Se-p63 R!CL* 00
NO Rr. SOIT: 006 OT-M., 001

ACCESSION NR: AP4004877 "S/0181/63/005/01213620/3621
AUTHOR: ismaylov, F. I.; Guseynova, E. S.; Akhundov, G. A.
.TITLE: Optical absorption edge of GaS and GaSe single crystals
SOURCE:' Fizika tverdogo tela, v. 5, no. 12, 1963, 3620-3621
TOPIC TAGS: ga'llium sulfide, gallium selenide, optical absorption,
optical absorption edge
ABSTRACT: The optical density of GaS and GaSe monocrystals was meas-
ured as a function of wavelength in the interval A - 400-750 mu at
temperatures between 280 and 580K. The resisitivity of p-type GaS
and
p-type GaSe samples, obtained by a method of slow cooling at a con-
stant temperature gradient, was 1010 and 20 ohm-cm, respectively.
The.
width of the forbidden band determined from the absorption edge at
room temperature was found to be 2.53 ev for GaS and 1.97 ev for
GaSe.
The temperature coefficients of the forbidden band width for GaS and
GaSe were -7.2 x 10-4 and,-8'x 10-4 ev/deg, respectively. Orig..art.
has: 2 figures.
Cord xg/V t'9z C-5-"e'

AIURMWV., G. A.; ABDULLAYEV, G. B.; GUSEYWOV, G. D.; MEMIYEV, R.
F.; ALIYEVA, M. KH.
"Preparation and investigation of A III B VI single crystals."
paper submitted for Intl Conf on Physics of Semiconductors,
Paris, 19-24 jul 64.

Ir
ACCESSION NR: AP4012601. S/0233/63/000/005/0095/0100
AUTHORS: Akhundov,, G.A.; Dzhafarovas B.A.; Iskender-Zadep Z!A.
TITLEt Analysis of the capacitance of silicon diodes
SOURCE: AN AzerbSSR. Izv. Ser. fiz.-matem. I tekhn. nauk, no. 5,0
1963,, 95-100
TOPIC TAGS: p-n transitiousp volume charge, diffusion capacity,,
frequency dependence of capacitance, silicon, silicon diode, diode i
silicon diode capacitance
ABSTRACT: The authors have investigated the dependence of the ca
pacitanoe of the p-n transitious on the constant reversed bias, on
temperature, and on the frequency of the ac-signal. Specimens were i
prepared from n-type silicon into which aluminum was Introduced by
thermal diffusion. The measurement of the capacitance was made with*,
the MLE-1 bridge which was fed by the sound generator SO-10. The i
electron-beam equilibrium indicator EBEI-3 was used. Measurements
Card 1/2

ACCESSION NR: AP4012601
were made at temperatures of melting ice,, dry icej freezing point of
alcohol and liquid nitrogen. The results of measurements are.
ethyl
discussed in terms of changes of the volume onarge and concentration
of charge carriers (diffusion capacitance). The latter is tempera-
ture, dependent. The author Is gratful to Prof. O.B.-Abdullayev for
interest In the work. has: 8 figures and 2 tables.
Orig. art.
ASSOCIATION: None
SUBMITTED: 00. DATE AOQ-, 26Feb64 ENCL; 00
SUB CODE: PHp OR
002
NO REP SM 001 OTM:
2/2

GUSEYNOV, G.D.; AKHUNDOV, G.A.
Anisotropy of the electroconductivity and Hall constant
of p-TlSe.
Fiz. tver. tela 6 no.2:634-636 F 164. (MIRA 1712)
1. Institut fiziki AN AzSSR, Baku.

ACCESSION NR: AP4013534 S/0181/64/006/002/0634/0636
AUTHORS: Gusoynov,, G. D.; Akhundov, G. A.
TITLE: Anisotropy of the electrical conductivity and the Hall
Constant in P
.type TlSo
'SOURCE: Fizika tverdogo tola,, v9 6, no, 2e 1964, 634-636
!TOPIC TAGS: electric conductivity, Hall constant, semiconductor,
single crystal
~ABSTRACT: These properties for a single direction have been
discussed by several
,:investigators, but the authors have e=nined the proportios in
single crystals
.or p-type TlSo for different directions. The temperature range
invostimatod was
',from 80 to 573K. The authors have found that conductivity varies
according t6 the
.'crystallographic direction. The relations are shown graphically
in Fig. L on the
~Enclosures. They found also that the Hall component is constant
but diffora for
:various crystallographic directions. This is shown'graphically in
Fig.-2. on
,the Enclosures. "The authors thank Professor G. B.
Abdullayev'-for his constant
linterest in the work." Orig. art. has: 2 figures.
:ASSOCIATION: Inatitut fisiki AN As. SSR, Baku (Institute of
Physics ANIZ. SSR)
Card

ACCESSION NR: AP4013534
Fig. 1. Dependence of conductivity
components in TISe crystals on recip-
rocal temperature.
Curves 1 and 2 are for sample Ap with
Cr = * -1 -1
.. _11 022=0.42 ohm cm and :5f0'17
ohm-1cm-1 at'room temperature; curves
3 and 4 for sample B, with &',=4r22=
4.8.10-3 ohm7lbm -1 and 0! =2.5*1073
33
ohm cm ; curves I and 3 are for
current-density along [1101 a '.
V lip
2 and 4 for current density along
[0Q 0.,
330
Card
ENCLOSURE: 01

ACCESSION NR': AP4013534

INCLOSU*kt 02

F~g. 2. 'Temperature dependence
of components

r.

of the Hall constant in crystals of TISe.

I and 2 are
for sample A; 3 and 4 for B;

1 and 3
have the electrical field directed

cz

along
[11(i ;the ragnetic field along (0021

2 and 4 are for the
opposite orientation;

*
001

hence
1 and give RjjO and-2 and 4 give

3-10

j, -where the lower Indices
Indicate
%

-
--- 0.2
0

.
0

--
-
.1
f

current direction,, the uMr*indicato

naghetic direction*

a

JA iii U U U
U U !U

IM03

Card 14/4

t
ACCESSION NR: AP4042524 S/0109164/009/007/1281/1266
'AUTHOR: Abdullayev, G. B.; Iskender-Zade, Z. A.; Dzhafarova, E. A.;
Akhundov. G. A.
TITLE: Effect of electrothermal treatment on the properties of
silicon diodes
~'SOURCE: Radiotekhnika i elektronika, v. 9. no. 7, 1964,.1281-1286
TOPIC TAGS: semiconductor, silicon diode, semiconductor diode,
silicon diode
electrothermal treatment
ABSTRACT: The variation of a reverse current in Si diodes an a
result of the
prolonged application of a d-c *reverse voltage at an elevated
temperature was
experimentally studied. An Si diode was held for 6 hre at a reveise
voltage of
150 v and a temperature of 448K; its initial reverse current of 2. 8
ma dropped to
a stable value of 0. 9 ma with no variation in the forward current.
The effect of
temperature on the reverse current was also studied. It was found
that the
-~Cdrd-

ACCESSION NR: AP4042524
.-V
activation energies of minority-carrier forma ion were 0. 21 and 0.
08 ev; after a.
treatment at Z90-375K, recombination centers lying 0. 56 ev deep
became
Fpredominant. "The authors wish to thank B* M. Vul for discussing
the work and
for valuable comments. 11 'Orig. art. has: 7 figures and I table.
ASSOCIATION: Institut fiziki AN AzerbSSR (Institute of Physics, AN
AxerbSSR)
'~SUBMITTED: 11-May63 ENCL: 00
ATD.PkESSt 3081
SUB CODE: NO REF SOV: 004 OTtMR: 005

- -.-I ~--- ---1 ..~ . -
. - I L, . !, - , - % -t L! I - i
Ar'-ESS70N NR: AP4Oh4647
.,j A F Ynov . G, D, ; A k h u A, e. v P h.
A 71 Y V 5
T I TLE t E I a r- t rv p h y a i c a I p r o p a r a & o f id 1
telcrj~'~JL- 5 inile
crVatall
50' '!RCE; AN SSSR. Izv. Seriva fizi--heskava, v, 211, no, 8,
1964,
132 3- 132 7
'TOPIC TAGS] tballium selentae, single Crv5t81)!aenicvnduttVT
Binglgl
crvstal, electrical property, photoelectric vrovertv, thermo-
c I e c t r i c prope rtv , cryis tal heat tras tmen',
ABSTRACT: The purpose of ths~ study wAs to prepars more perfect
t h ii I I i -.j m selenide (TISe) single crystels and to
establish the tem-
e r ii r ;j r e anJ carrier concent rat 11on e c e -) c e "heir
electri c a I
o f
a n d p I i o L o - a n o a rn, oe 1 e c L E i L ~ : i '. E I I "
11 41 ~ v ~% A
r. It I 'Q I f 1; U 3 Q. I n 5 f! 1 V 7 P 7 C 9 t R e n 5 r a x -
q n ? -7
if

L A656-65
ACCESSION NR. AP4044647
tale with an impurity concentration as low as 6 x 10 13 CO- 3
were
grown bv multiple-pass zone 'iectrical measure-
menta show L.13C the temperature d1QZtrlC coaduc-
t v i tv a n d H a I I cons t fkn t A c qu i re 0 A r, P, e Tr.
1r r. u c or 9 t a b Ie
e e r i w I
j7 e A
c n r, c e a tr at f, n n the 10 1 r:: 0 r e5 V r 7 1
ce a n I e c rv s t a Is causf- k" t,A e g-
tion o f unstable acceptor centers the rmoAccentors) I n the
crvatAl
-e fl
.1 p b i eve t 7- e 9
C,-Ofilrmed by x-ray diffract-'Or, "1e f0erMAI eMf W-3S
me;taured in the 80-570K range in p- and n-tvpe TISe single
crvat;-ils
w e n n u - i t v c c-, n c e n. r a 7
E 7 7 P. P 7 f V a 1 u e --n-
h
n- ypa a amp L C 4e Z

L 8W-M
n4044647
the phonon drag effect. The latter effect vas detected In both
crvrtalltographic directions of the tetragonal crystal, and was
fur-
n',1,3ted bv grnphic comnariscn of 'he temperst-orle depen-
~-f tho ~h*7MA,
SUBM17TEDt 00 ATD PRESSt 31U ENCLi 00
"'!IF N U Kk. ~ti r n

AKHUTIL)OVI, G.A.; AKSYPIIOV, 1.G.
Rectifying properties of TISe single crystals. izv. .1-14
bzerb.
SSR. Ser. fiz.-tekh. -'L mat. nauk no.1:75-77 164. (MIRA
17:9)
- '16

-1
GUSEYNOV, G,D,;-AKMNDOV, G.A.
Anisotropy of the electric properties of p-T!Se single crystals.
Dokl. AN Azerb. SSR 21 no.1:8-13 165.
(MMI 18:5)
1. Institut fiziki AN IzerSSR.

AKHU14DOV G.A.; ABDULLAYEV, G*';.; GUSEYNOV. C.D.;
14EKHTIYEV, R.F.; ALTYEVA,
Z:-:~~
M.Y,h.; NISEYNOVA, E.S.; GASANOVA. 1.A.
AIIIB7-L semiconductors. Izv. AN
Azerb.SSR.Aer.fiz.-tekh*i mat* nauk
nool.s107-114 164- (YJ RA 17: 22)

,-, - - ABSITMCT: The galliumn'tellurlde was synt-hesized
tl,,-
b- -
'I I I
- - - . I ~ - . - . II.- i .- -, -1 , -: ; . - - . .

ACCESSJL~.)N ll~ T AF5 11'
stnacture was observed at hellurn. temperature. Some differences
W

t- ;.--~ t -f,:-;
.5 0 1 1 ' ~ 9
p -I - - :, - - 11" N, R , Ar' .1 ~ )-.
. .... 21. - I

G. A.
T-T~O TA" F q!IIIiiin Frnjenldp, Plectroluminescence, luminescence
L t~,; -
tr'.P-htnens, sirigle crystal, currefit
A P F Tr 7~-A C'-" Tlnllowtnz up the cDf lnvpstiza~llnp: the

A C C F 'S - I - i!," I I.:~. :A F '- .-D 11 'a' - -
posite surfaces of the crystal were usea in Lne
rr*aa6ujF-ci,,&i.tEi. i
- ~ I "N.
- -... i - . -F. !? I i I . , i i -~ i i ~".
. . . I ~,, . ~- 1 . . .

n; e

L 617'7-61~ 7,r( I") T~Jpfc I/jo
A F",;
AUnOP.: Akhundov-, G. A.; Aksy&nov, 1. G.
TT-Y of the
Cord

L 63377-65
ACCESSIOR AR: AP5019770
of SaSe. Tt is assumd that radiative rec=bInation betwen the
conducticm band
tl-,- V&Iencil )art, take Fir-. lh~cA G. A'-'Ic:---.
ASS~X- IATION nc)ne
IIUB~GTM: OBFeb6~ U.1
N~' REY SOV: 001 OTHEF: W2
Card 2/3

L 61377-6~

L,e ft Elect rol umines -pr~
i'st i c and dependence z"-
Card 3/3

'34
7w-
QO~tV J.
e
p
"'I Se
-
p
erbSSR. Dokla,I"'
Ru, E AN Az ~)
resistivitY, Hall constant, Brillouin zonejN
TI) PT T A nj FanisotrOPY.
~~ave
Card 1/2

,I :-"- I'- I ., 1:
,) TUB Md " 17 h ) : Jl~,~,c t63
NR REF SOV: 005
71 ,* C :, '.
aTHER: 000
'Z~ 7 , -~ " -, 7) -, - , ; 6 M
. - , "7.~ 1
v,
.c-
co,!3 2/2

r
e,
;vlectron beam iaser, coherent
inductor (GaSe) pmped by
,ti,n in a ill-VT semic-c,,zz~., -nnPrAratiOn
I-5 3 arid resistivity Of =amples thick or less, c0o_~ea c:~~
tof 5 Y monocrystalline eted to the cieav~*d
Im dire
S.!P-Parala e' 20,(j_kt:v e~e
MOO;,
forbidael~ 6ar
r-,rd I -------

L h3907-65
ACCESSION NR: AP501152~
line at 592~ nBrrows with increasing current ~ier_silty of the
beam. The displace-
ir~ the -nF -_rren*, ien&4* .'es was
.7:W
ar-
(Physics Institute, AcadenW of
S
7_
3~48
Card 2/8

L-2M~6-
C
ACC hIR: AK,009323.: SOURCE CODE.
AUTHOR: Akhundov lsmaylov,, F. I.; Kaziyevp F. N.
GO. A.
ORG: Institirte oiliwsl6s,: AcadEq: Of sciences Azerbaydzhan SSR
(Inetitut fi
Akedemfi nauk Azerbaydzhanskoy SSR)
TITLE*$ Photoconductivity of-G&S single
_metals
SOURCE: AN AzerbSSRe Doklady) v. 21j, no. 11j, 1965, 9-3.1
.~~TOPIC TAGS: gallium c ound., single crystal., photoconductivity,
spectral dis
OMP
tribution, forbiddenband, carrier lifetime
ABSIMACT: In view of the fact that the GaS compound has been little
studied in
the past, and can be produced in the form of thin single crystals with
natural
specularly-reflecting faces, the authors have produced such single
crystals and
investigated their physical properties. The GaS compound was
synthesized in an
evacuated quartz ampoule by a procedure devised by the authors, which
in briefly
described, and the single crystals were grown with apparatus described
by the
authors earlier (DAN.AzerbSSR, 1962, 18, U). The spectral distribution
Of the
photoconductivity was measured with a spectrophotometer (SF-4) in the
245-415K,
interval.
The spectrum consisted of a single line with a maxiom near 0-50 P-
Cnrd -i

L 27776-66
-Ace NR: ArOO9323-
The width of the forbidden band decreased linearly with increasing
temperature
(-2.45 ev at ~WK)$'.with.a-temperature coefficient -6.9 x 10-4
ev/deg. 7his
s ith data.obtainedby the authors from the temperature shift of the
agree, v
in.trinsic-absorption edge (FW v. 5, 362o, 1963). The photocurrent
increases with!
illumination as On (0 illumination, n = 0.5). The photocurrent
increases I
more- slowly, with: t',Ie temperature up to 380K, and then more
rapicUy. Since the
~the Cheimical pAential-increased upon heating$ and
samples were of-the~p typed
the lifetime of the nonequilibrium carriers increased. It - is
therefore coneIluded:
that the temperature dependence of the photocurrent is due to changes
in the
lifetime of the nonequilibrium carriers. The carrier activation
energy calculated~.
on the basis of this conclusion is 0.8-0.9 ev. Different excit
'ations caused the
GaS crystals to glow,, and this will be the subject of a separate
paper.. * The
authors thank Professor G.-B. Abdullayev for continuous interest in
the work and
for valuable advice. _nTs__re_poFE -vaspresented by Academician'Zo 1,
Khaliloy of
the Acadeqr of Sciences of the Azerbaydzhan SSR. Orig. art. has: 2
figures.
(021
SUBM DATE: o6Apr65/ oRiG REF: OTH REP: '002
SUBICOM., 20/ 002/
ATD PRESS t 2VT

STI -1jP
~L 0086 "-6 i T -401j,
UP t
Ac7C Nib S0UAtE,CODS1 Gt/0'D30j66/616/66i/x0
~AP6024.153
AUTHORs Akbundovt '00 A.; Xerimoval T. 4.
'011G.'s Institute of Piwaicst AdadoW of ~Sciences of:00-Azorbayfthan
SSR* NkU
TITLE a Infrare'd obsorption.of A I-TBVI single crystals
SOURCES, Physica status solidip ve 16, no* 11, 1%1~~ 151'~-K16-
TOPIC TAGS1 , gallium -:compound# sulfide,., o'elanido, indium
compoundq thallium comoundf.
serd onductor ~-single: crystal
ABSTRACTI Transmissionispectra of GaS GaSe,, InSe and We singl,o
crystals in the
range were recorded at-30004_witg-~nlinfrared spectrometer (50o Fig.
I and.
1D. t-25 p f
2). It-is apparent that GaS.and GaSo have w1do transmission-rangesp
0.7.5-14- 4 am'..
0o73-17 p re"oti"Iy, and- absorption bands -at 14-25. ~t. The
intensity.of those an a
does not vaz7 from--sample. to sample even if impurities are
introduced, indicatin
9
these bands are prdbablydue' -to lattice vibrations, The spootra of
InSo .and TISe- Ialso
ihiv a Wide range of transparoncy.~ In I-contrast to GaS and GaSeq
the DuAamontal. Ab-
sorption edge in the case of InSe and-TlSo lies in the infrared
spootral .region# 7he
forbiddan gap width determined from the fundamental absorption edge
in 1.2 and 008 ev':1
for InSe 'and TlSe respectively. Authors thank Dr. G. B. Abdullayey
for maw helpful':~
disoussionse Origs~ arte haes 2 figures,
410