SCIENTIFIC ABSTRACT SAMOYLENKO, G.I. - SAMOYLENKO, V.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001446930012-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 25, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

S11931601000101110191022
AOO4/AOO1
On the Introduction of the go- 37 (EI-937) Grade Steel in Meehan.
@9 ical. Engineering
k-viozyayer,vennogo mashinostroye-rilya (Scientific Research Instil,-u-,e of Tractor -3"ld
Agricultural Machine Constractlon).
ard 3/3

SMOYLMO, G. I.
Elastic and flexible sensitive Instrument elements. Biul.tekh.-
ekon.inform. no.11:67-68 160. (KIRA 13:11)
(Instrument manufacture)

SAMOYLENKO, G.; GOREV, -K.
Improving the quality of electric insulators. Biul.tekh.-ekon.
inform. no.5:80 161. (KERA 14:6)
(Electric insulators and insulation)
PME
W&MAMML 6-

SAMOYIMMD, G.I.

SALK10YUNKO, G.L.; GOICY,
,
All-Russian conference on the introduction of multiple .-ac'ninin.r
of parts in the rmchinery industr-.r. i3iul.tekh.-ekon.inforr,. no.l:
70-72 161o (IMRA 34: --,)
(Ifachine-shop practice)

SAMOYLENKO G L
Fulfillment of the state plan for the development and introduction
of new imcb, trial equipment into the national economy by individual
economic councils of.the R.S.F.S.R. ..Biul. tekh.-ekone inform.,
no. 2:70-71 161. (KIRA 3;,:2)
(Ipdustrial management)

SAMOYLENKOp G.I*; GOREVp K,M.
At the "Krasnyi Mai" Plant and the Leningrad Plant of Decorative
Glass. Stek. i ker. 18 no-2:40-41 F 161. 041RA 14:3)
(Leningrad-Glass mamSacture)

.1 SAMOYLENK09 G.I.; GOREV, K.M.
In the State Scientific and Technical Committee of the Council
of Ministers of the R.S.F.S.R. Tekstsprom. 21 no.3;89-90 Mr 161.
OMIRA 14:3)
(Textile machinery-Research)

I
SAIAOYLENKOp G.I.; GOREV, K.M. -

SAMOYIENKO, G.I., inzh.
Testing TSV-2 cars. Torf. prom. 38 no.6:18 161. (MIRA 14:9)
1. Radovitskoye transportnoye upravleniye Moskovskoko oblast-
nogo soveta narodnogo khozyaystva.
(Peat industry-Equipment and supplies)

SAMOYLMO, G.T., prepodavatell.
*04,
V90"Iffit. , -
Station for artificial insemination at a Teterinaz7 zootechnical
school. ZhiTotnovodstvo 20 no.5:85-W My 058. (MIRL 3-1:5)
1. Fisarevshchaunkly TetzootekhnIkUM4 PoltavskVa oblast 1.
(Pbltava Privince-Artifiaial insemination)

SAMOYLENKO, 1.
Inspection of li,ghtning arrestors. Pozh.delo 8 no.4:10-11 Ap
162. (MIRA 15:4)
(Lightning protection) (Fire prevention--Inspection)

SAMMEIM0, I.!. (Barnaul)
Problems and prospects of research fn coagulation. Probl.
gemat. i perel. krovi 9 no.)T19-21 Mr 164. (HIFA 17:10)

SAMOYLENKO, LL kand.ekonomicheskikh nauk
Role of electrification in creating the material and technological
foundat4on of agriculture. Uch. zap. Volg. goo. pad. insto
no.10,407-197 159. (KMA 140-1)
. (Electrification)
(Volgograd Province-Electricity in agriculture)

BORISOV, Yovgeniy Filippovich; BROVER, Izraill Moisayevich, prof.,-
LARINA, Raisa Yefimovna; MADYANOV, Aleksandr Stepanovich;
SAMOYLENKO, Ivan Ivanovich; CHERNYSHEV, Nikolay Tikbonovic'
[Reader in economics; precommunist means of production] Khre-
stomatiia po politicheskoi ekonomii; dokommunistichaskie spo-
soby proizvodstva. Pod red. I.M.Brovera. Moskva, Gos. izd-vo
"Vysshaia shkola," 1963. 378 p. (MIRA, 16:7)
1. Prepodavatali kafedry politicheskoy ekonomii Volgogradskogo
pedagogicheskogo instituta (for Brover, Larina, Madyanoyp
Samoylenko, Chernyshey). 2. Vsesoyuznyy zaochnyy finansovo-
ekonomicheskiy institut (for Borisov).
(Economics)

SAMOTLENED, I.S.
Change in the enzymatic activitY of the intestinal juice [with summary
in English]0 Fisiole'shur. [U)cr] 4 no.4:495-501 J1-A9 '58 (MnA 11:10)
11 Institut fiziologii iia. A'A' Bogamollts XIT USSR. laboratoriya
fiziologii pi*ehevareniya i ;;a;okiy farmataosvtichenkiy Institut
kAfedra, biokhimiio mikrobiologii i gigiyany,
(oTESTINES-SICRETION)
(ENZYMSS)

-WOYLIM, I.S. Samoilenko, I.S.]
L
Heat exchange and motor activity of the small intestine.
Fiziol.zhur@Mw- (MA 12:5)
j 5 no.1:124-327 Ja-F '59.,
1. Odes8kiy farmatsevticheskiy institut, kafedra biokhinii.
(INISTINES) (BODY TMUWUMM) .

SAMOYLENKO, I. S.
Doc Biol Sci - (diss) "Heat conditions of the external medium and
the functions of the small intestine-" Odessa, 1961. 28 pp; (Min-
istry of Higher and Secondary Specialist Education Ukrainian SSR,
C
Odessa State Univ imeni I. I. Mechnikov); 250 copies; price not
given; (KL, 7-61 sup, 226)

KORDYSHO Ye.l.; LIVKE., V.A.; STRUNINA, A.V, Prinimali uchastiyet BOSANYUrp
G.P.; GOI,9VAIIQVA,, E.V.; SL40YLEUKOj L.N*
Contamination of_pxpansion gases from am;aonia prodnotion by
hydrogen sulfide as a reset
Khim. prom. 4.1 no. 122901402- Yt65 (MIM-1921)

SAMOYLMKO, L.P.- -
Cultivation of yeast vithout supplementary feeding with malt.
Spirt. prom. 24 no-3:31-32 158. (min n:6)
(Yeast)

SAMOILENKOP agronom
r,-,-,,,,,,,@----.- A!"
Use sorters in disinfecting needs. Zaaheh-. rest. ot vred. i
bol. 7 no.4t16 D 162* (MMA l6t7)
1. Korenovskoye opytnoye khosyayotvo Visenoyusnogo naucbno-
looledovatellskogo instituta aakharnoy sveklys Krasnodarskiy
Tway.
(Seeds-Disinfection)

soViog-4-6-15/27
AUTHORS: Rovinskiy, R.Ye. and
TITLE- Diffusion of Thorium and the Destruction of Thorlated-
Tungsten Electrodes in a High Current Discharge in Xenon
(Diffuziya toriya i razrusheniye elektrodov iz torirovannogo
vollframa v sillnotochnom razryade v ksenone)
PERIODICAL. Radiotekhnika i elektron-ika, 1959, Vol 4, Nr 6,
pp 1018 - 1025 (USSR)
ABSTRACT: The work described was concerned with the investigation
of the removal of thorium from thoriated-tungsten
electrodes in high current discharges in xenon at ultra-
high pressures. The concentration of thorium in various
layers of the electrodes was determined by employing
the natural a-radio activity of thorium. The experiments
were carried out by employing three special tubes, whose
electrodes were made from the same thoriated-tungsten
rod; this contained 1.5% ThO 2; The tubes operated at
a current of 45 A; the first ube was run for two hours,
the second for ten hours,, the third for eighteen hours
Cardl/11 and fourth for fifty hours. During the operation the

S @Vjgq@@416ajj/27
Diffusion of Thorium and the Destruction o 0 e ungsten
Electrodes in a High Current Discharge in Xenon
temperature of the tips of the electrodes was measured
by means of an optical pyrometer. The tubes were run
at the mains (50 c.p.s.) voltage. After a specified
interval of time, the given tube was unsealed, the
electrodes were taken out and the content of thorium in
the working region of the electrodes was measured. This
was done by employing A standard a-particle counter.
The temperature distribution along the working portion
of the electrodes (Figure 1) was measured by employing
a stroboscopic disc. It was found thatothe temperatures
of the electrode tubes were 2300 +,100 C. The temperature
distribution along the operating region of the electrode
was recorded and this is represented in Figure 4. The
distribution of thorlum along the operating region of the
electrode is represented in Figure 5 (for the 4 above
tubes)! The concentration of thorium as a function of the
operating time of a tube is shown in Figure 6. The .1
measurements permitted the determination of the diffusion
card2/4 coefficient for thorium; this was found to be

sovViog-4-6-15/27
Diffusion of Thorium and the Destruction o horiated-tun-sten
Electrodes in a High Current Discharge in Xenon
D = (6 4+.2).io-8 CM 2/sec. The value Is in good agreement
with th; results obtained by I. Langmuir (Refs 8,9). The
experimental results illustrating the dependence of the
concentration of thorium as a function of time could be
compared witli@the solution of a uni-dimensional idealised
diffusion problem for a semi-infinite cylindrical rod.
The solution of the problem is given by A.N. Tikhonov and
A.A. Samarski-Y (Ref 10) in '--he following equation:
n = n.4(Z) (2)
w1here n is the initial concentration and
0
4(z) is the error function as defined by Eq (3).
The experimental and theoretical results are compared in
Card 3/4

sov/iog-4-6-15/27
Diffusion of Thorium and the Destruction of Thoreated-tungsten
Electrodes in a High Cl@rrent Discharge in Xenon
Figure 7, where the 'Solid' curves represent the
theoretical values, while the 'dashed' curves were
obtained experimentally (the same as in Figure 6).
The diffusion q can be determined from Eq (41). This
equation is used to determine q as a function of the
logarithm of time for the layers situated at 0.075 and
0.1 cm from the surface of the electrode. The authors
express their gratitude to L.A. Serova and N.F. Pisarenko
for their help in the experiments, and to A.V. Nedaspasov
for the discussion of the experimental results.
There are 8 figures and 10 references, 4 of whichare
Soviet and 6 English.
SUBMITTED:

SAMOYLENKO, N.A., inshener.
OWV-". -
Pneumatic transportation of foundIry sand, Lit.proizv.no.12:28 D '56.
(MLRA 10:3)
(Sand, Foundry) (Pneumatic-tube transportation)

SAXOTLMMO. NtT
scraper conveyer f or..amh md slog rimawal -witba-WIlrbinlieF &Nb-.
gitte. galdi.'pioii.@q no','6:28-29 '53--'
l.Bobrovitakiy sakharmyy surod.
(Furnaces)

PONOMECHUIK.. A.F., inzh.; SAMDYLENK09 N-M-@ inzh-
New P-1-75 air drill. Gor. zhur. no-9:55-56 S 162. (MM 15:9)
1, Nauchno-issladovatel'skiy gornorudnyy institut (for
Ponomarchuk). 2. Rudoupravleniye im. Dzerzhinskogo Krivoy
Rog- (for 'Semoylenko) .
(Boring machiner7)

DMIISOV, Nikolay YLitrofanovich; SAMOYLENKO, P., otv. red.; VARNAKOVA, N.,
red.; HUDINA, G., rcd.@; URMANOVA, A... red.
[Reinforced-concrete supports and their use in Kuznets Basin
mines]Zhelezobetonnaia krepl i ee primenenie na shaldrtakh
Kuzbassa. Kemerovo, Kemerovskoe knizhnoe izd-vo, 1959. 177 p.
(MIRA .15:11)
(Kuznetsk Basin--14ine timbering)
(Reinforced concrete construction)

BMYY#, L.1 SAMOICLM=p Sj-
Tz "gard to Belo Nwileacto irtidli loptim cont"I of the
parametern of,&'radic line. IMektronlatO 15'no.lo72-74 Aa 161
Om
(InFormation thsorr) (?Adio Ums)
(amiloww'; 0. 1.)

062 6 00
B101 B186

AUTHORS: S '.A-
Samoy enico

Tu. P. -Kirey -@G
Yegorov,@

is. G
"Tolenkova
Ye. A.# and-
Chernyshev
.
;
,
TITLE: sp66tra_of t- mco o
Infrared ui,oa. urated:or"gan6sil W,o mPouh46_'Con@,;',
taining-ta pentim-bthyl-dibilyl. 'group

ERIODICAL
P
; Akademiya -nauk:SSSR9- zveotiya, Otdelen1yj3..khimichcsk4
nauk, no- 39 1963, 569. 571

The
infrared speo'tia.of the do uxids (GH (cH
mpo
3 3 3 2 2 n
n=O, 1, 2, were investigated and' the. -inteAs ity and position@.of tho.9

bands were t
cotaparad with' o ne.. another'., 'I was - found hi
(C-C)
1596 cm- wi th the vinyl- derivative - (Zi at 0) and th a t it is': shifted to-.-
1635 cm- with the. allyl%.derivativs_(n. 1); furtherp .that it -has maximal
intensity with this compound -and_lhat.@it_is 1638.0 :.with_,the.Y-!!bUt 1
derivative (n 2).@ The..Pooition~of:.-the.other.band as:
@(a_H)' P(C 2
P dif
(CH) fers little from, ihaf@.is-- usual:irith allie'nyl silanes. Adcdrding@
C

4

L 58304-65 EWT(m)/E PF (c)/EYIP(J)/T PC-4/Pr-4 RM
ACCESSION NR: AP5010045 UR/0.368/65/002/002/OI54/0159

AUTHORS., ---:: k1re-
YU-0rPY-4 Yu.---Ei, rnoy1dfiko',.'.'
TITLE: Intramoleoular-InteraiD-tions'-~-Aii&--the---~cfiii~t' r1stle be
havior in infrared speotra of.some organosilicon goMpounde

SOURCE, -
Zhu~n-il--prikla-dii-6'---a-p~~*-r'-O's'-*k'o-p":t:t-------
no-
2

---154
-159
PIC--TAGS:--~--I;nf-ra-red--speiattd#i~':~~~&llaon'~-~d4i!tVitivei::~~all, V- va
4er-1. I-Vi
V
siloxane,
t -
electron interaction, atomic bond, molecular optical para-,
me
er, characteristic vibration

ABSTRACT: _2
It is shown on the basis of the behavior of the frequea
cies and intensities in infrared spectra of allylic der.Lvatives of
CH = CH
silicon (R 4
Si (CH
) that the additivity of thi optical and
)
-n
2
2
n
molecular parameters of the characteristic vibrations io approximate,
,DwInw, t.t. I. h(, el,7:i-t--on interactions between the unbound atoms. The
opectra of the compounds (pur\-- or dissolved in carbon te.-
1/2
Card

-j:1 @S@ I

-.77
Itrachloride) were measured--- with an infrared'. dbtib14@@ be a r, 0.,
b t
5- tL
rom. 't
rae te r -14) in cells rani f Q 500 'Ah-thidIcness-
(IKS
layer thickness a-nd the solution concentration were chosiah such as
obtain optimal spectrum registration in each case. It is suggested
that the comparatively high intensity of the infrared vibration band
of siloxanes Is a result of a specific electron interaction between
a silicon atom and oxygen (d-p conjugation). Original article has:
tables
SSOCIATION: None
SUBMITTED: 25Jui64 ENCL: 00 SUB CODE: OP, OC
NR REF SOV: 010 OTHER: 005
Card 2/2

N ffej
INFOPHATION THEOPY
"Optimum Regulation of Parameters of a Radio Line" by
S. I. Samoylenko. Elektrosvyaz', No 12, December 1957, PP 3-G.
To increase the amount of information transmitted per unit time
under varying transmission conditions, it is possible to employ opti-
mum regulation of Lhe parameters of the radio line, the optimum being
dependent on the transrdssion conditions. A procedure is examined for
the conFtr_--ction of optimum-rq!gulation systems in tlie'case of contin-
uouG ana b_-'_qa.-:.-y-z,)ded signals. The method Is I'llustrated by an example
of optippim rear-lation of the'amplitude threshold-level in the trans-
mission of comnanicatim codqd with a binary code. Reference is made to
an article by R. A. Silverman, Transactions IRE; IT-1, No 3, 1955.
Card: 1/1 -7-

Y07-11rANKC). !'.I.
Preparation of cyclic noiseproof codes and an anal-ts of their
error-correcting capacity. Dokl, AN SSSH 162 no.: 516-519 MY
165. (MIRA 18!5)
1. Nauchnyy sovet po kiLvrnatike pri Prazidium AN SSSR. Sub-
mitted December 2, 1964.

"---65 -r:EO-2/EWt(ilAEC.-4/EED~;-2/gV!A-Cfil' IM
L 63882
F7w&=m Nat AP561443 UR/0020/65/162.fOO3A)516/0519
anglanko S
AUTHOR: S
TrHZ -. Constructing aycaio noise-immune codes and analyzing their correcting
ability
SOURC& AN SSSR. Doklady, v. 162, no. 3, 1965, 516-519
TCPIC UIS: cyclic code, irror correcting code, noise immune code
ABSTRACT. CyclAc characteristics of square matrices are used for cixMrz'Wtj-n9
cyclic noise-immune binary codes (J. H. Maggitt, Trans- WOrm- Tb%'Orl. no- 4.
234, 196.). A square matrix (5) is selected which satisfies the conditions of
operation of shi-ft regtsters and precludes the possibility of s-.multaneous
sim-mation of signa-!-- a--riving from more-than-2 register celli. The method permits
sea.rchaxig for and cone'.ructing the codes that meet 'code--oo inatim
% mb
w#n-
th errors to be corrected, redvndancyY.-ar4 also, a nalyziAg-thev-porm
-6scribable-br
11V of wW cyalic- 0@"a-
abi
Ing =4 =4

L 63882-65
F-A(;cmioN N_Rt AP5014643
AS=lk"A-.-Offt Nauchny7 novat po kibernatike pri Prazi&uma AN SSSR
(Soientific Board on Cybernaticat Presidiun, AN SSSR)
,'SUBMITTEDt 26Nov64 EXCL: 00 CODRI DP
NO RSF SOVt 002-
OTHERs 001
-Card 2/12

TOPIC TAGS: data transmission, b inary code, communication channel
ABSTRACT: A. A. Pistollkors (IZV. elektroprom. slabykh t
tokov 1935 -.No 3, 51)-firs
pointed out the possible use of 1800 phase change modulation for binaryinibrmatio trans
a
mission. V. A. Kotellnikov showed that such a modulation is the optimuni one Iii presence
of white Gaussian noise. The present paper describes a method for the establishment of
correspondence between the -values of the binary,symbole in an arbitrary number of.
Card 1/2

SAMOYLXNKO, V.
Ex-oarimental construction of large-panel apartment houses In
(MIRA 10:12)
Leningrad. Gor.i sell.stroi.no.10:7-12 0 157.
1. Upravlyayushchiy trestom No.3 Glavleningradstroya.
(Leningrad-Apartment houses)

SAMOYLEIMO, V., starshiy leytenant
We should control the growth of the Commanist Youth League.
Komm.Vooruzh.Sil 2 no.12:64-68 To 162. (NIU 15:8)
1. Pomoshchnik nachallnika poUticheskogo upravleniya Belorusskogo
voyemogo okruga po komsomol'skoy rabote.
(ftmia-Arm.y-Folitical activity-) (Co=zunist Youth League)

4. W", V t, - ! 1A i0q!nshener (at.BelorechenSkAya).;BOKIAGOTs P.I., tekhnik
chenskaya).
irastentng and maintalning curve4 track secions. Putl i Put. khos.
no.1:36 A '57. (KM 10:4)
(Railroads--Curres and turnouts)

GREBUSKIY, 3-0-, POFOVlCH, I-V-, SAMOYUMO, V-A-
Effect of X rays on the growth, water absorption, and respiration
of seedlings. Nauch. dokl. vys. shkoly; biol. nauki no-3:i6o-164
16o. (MIRA 13:8)
1. Rekqmndov-a Wedroy fiziologil raateniy LIvovskogo gosudars-
tvennogo universiteta Im. Ivan& Franko.
(Plants, Xffect of X rays on) (Seedlings)

KRONICHEV, V.A.; SAMOYLENKO V.A.- KOROBANI, G.I.j. inzh.-mekhanik;
!Eb@@Jr
ARTF,Mluv-,-Y-- OVII P.A.
Letters to the editor. Pat' i put.khoz. 5 no-4:47 Ap 161*
(MBIA -14--7)
1. DorozImyy master at. Magaetity,, OktyabrIskoy dorogi (for Kromichev),
2. Zamestitell nachallnika distantaii puti$ at,, Belorechenskaya.,
Severo-Kavkazskoy dorogi (for Samoylenim)o 3. Stantsiya telorechenakaya.,
Severo-KELvkazskoy dorogi (for Korobanl')- 4. Nachallnik otd6la, @uti
dorogi, stantsiya Bogotol, Krasnoyarskoy dorogi (for Artemlyev).
5. Nachallnik sluzhby puti, tresta Snezhinantratsit., g. Suezhnoye (for
Kolesnikov).
(Railroads)

S/130/63/000/001/005/008
Aoo6/Alol
AUTHORS: Kirvalidze, N. S., Dergach, A. Ya., Sam Lenko, V. Ii.'
TITLE: Improving heat treating conditions for pipe blanks
PERIODICAL: Metallurg, no. 1, 1963, 27 28
TEXT: At the Nikopoll Yuzhnotrubnyy Plant a-new method of prehedting the
metal in continuous and annular furnaces was brought into use. The metal is
subjected to intensified heating with natural gas when it enters the furnace;
the temperature drops at the furnace end. The temperature of a 1 X18H9 T-
Mhift9r) steel blank was 1,1600C in the center ofthe blank; it was attained
when the blank was approximatelyin the middle of the-furnace, where the metal
was held for an extended period of time at optimum @6mperature.* Under these
heating conditions overheating of the meta.1 was prevented. The specific.dura-
tion of heating was 8 - 10 min/cm of the blank diameter against 6.5 - 7.0 min/cm@
previously. Rejects were reduced,by about a factor of 1,.5 and the efficiency of
the unit increased by up to 30%.
ASSOCIATION: Nikopollskiy yuzhnotrubnyy zavod (Nikopoll *Yuzhnotrubnyy Plant)
Card 1/1

71
@h)/E1VT(d)LEWP(j)/EWP (v)/EWP (t)/ETI IJP (c) JD/W
L 04313-67 EWP (k)IE@M
_ACC NRt AP60--18-3-89 CA) SOURCE CODE: M1/0133/66 WX5@7/6@@
AUTHORS: Boria0vt So 14 (Doctor of tecbrxical sciences); Verkhovodp V. 1. (Engineer)l
Sam r)j Bogatyrev, V. A. (Engineer)
ORG: none 0
TITLE: Manufacture of eight-finned steel a on hydraulic horizontal presses
..Tipe y
SOURCE: Stal't no* 6, 1966, 537-538 14
TOPIC TAGS: metal tube, metal pressing, metal press, metal forming
ABSTFACT: A method for the manufacture of finned steel pipes (for the chemical
industry) by using horizontal hydraulic presses was developed at the Southern Pipe
Plant.Nikopoll (Nikopollskiy yuzhnotrubnyy zavod). The experimental work was based
on theoretical calculations published earlier by T. K. Verkhovod, A. Te. Pritomanovq
and M. I. Chepurko (Issledovaniye protsessa istecheniya metalla pri pressovanii
profillnykh trub, Sb.Proizvodstvo trub, vyp. 14, Izd. Metallurgiya, 1964). The
compression stress was calculated after S. 1. Borisov and A. Ye. Pritomanor
(Analitecheakiy motod oprecleleniya usiliya pressovanii stallnykh trub, Sb.
Proizvodstvo trub, vyp.5', Metallurgizdat,.1961). with the formula
41D L
P= -Falk F'@
D.2 - d2
T
Card 1/3 IWO; 1,774,38

T CA3@
ACC NR. AP6018389
where 6'. is the tension at the die, d"T - flow limit of the pipe materialq k - a
coefficient which depends on the elongation coefficient, f - friction coefficientg
DK - container diameter (175 mm), Lr-3 - length of compressed bushing, dT - inner pipe
dismeter$ and F - cross-sectional area of compressed bushing. It was found that the
theoretically calculated compression stresses were in good agreement with the experi-
mental data. A schematic of the construction and calibration of the dies is presented
(see Fig. 1). A recent order for 48 X 4 mm (with 105-mm fin diameter) pipes has been
successfully completed. V. So Nosko, A.-I. Lysenko 0. P. Drobich, A. I.
-Tyazhellnikovy No So Kirvalidzey and No So Yakimenko tioipated in the.experimental
work.
Card

L 313-67
ACC NR& AP6018389
A-A'
55
233
7
4
Fig. 1. Construction and calibration of profile die.
)rig. art. hast @ graphs and 5 equations.
'UB
CODE: 11/ SUBM DATE: none/ ORIG REP: 002
:ard 3/3

AXIMOVA, Ye.P..j RUDOY, V.S.; VIII-VCHENKW, L.N.; NESTEROVA, N.N.;
Prinivali uchastiye: VASIMMOO S.I.; ZUYEVp I.I.; VILOYAMS . O.S.
1AGUTI.M. R.V.; fMGACE., A,Ya.; KITAIMNKO.. V.Pij KIRVALIDZE,, N.S.;
YAKMERKO, U.S.; W2@O @V.D.@
Effect of the method of manufacturing E1847 steel on the lity
of tubes. Stall 21 no.12:13-U-1114 D 161. (MM l4sI2
1. Ukrainskiy nauchno-isoledovatellskiy trubnn institut (for
Akimova, Rudoyr Shevchenko, Mesterova). 2. Nikopollokiy
yuzhnotrubnyy zavod (for Vasilenko, Zuyev,, Viltyams,, Iagutina.,
Dergach,, Kitanenko, KirmUdze,, Yakdmonko,, Samoylenko).
(Steel,, Stainless-Electrometallurgy)
(Pipe mills-Quality control)

EIRVALIDZEp N.S.; DERGACH, A.Ya.; SAMDYIENKO, V.D.
Improving canditions of heating a pipe blank. Pbtallurg 8
no.ls27-28 A 963. (MERA 1631)
1. Nikopollskiy yuzhnotrubnyy zavod.
(pipe sins) (Furnaces, 1isating)
M '.

C.HM4AREV, A.P., adaderlik; GRUDEV, A.P., kand. tekh.nauk; TARIAN, Yu.N.,, kand.
tekhn.nauki ZILIBERG, lu.V... inzh.; hURMNIKO, V.Kh., inzh.; DERRGACH,
A.Ya., inzh.; LITIBSKIY, D.M., inzh.; ISSM-10VA, G.V., inzh. SAMOYL---PKO,
V-D-, inzh.
Reducing metal sticking on the rolls during the hot rolling of stain-
less tubes. Stall 23 no.7:631-635 J1 163. OURA 16:9)
1. MI UkrSSR (for Ghekmarev),,,
(Pipe mills@ (Steel, Stainless)

JI
U013316MOlb
A= Z31011 N

Yn,
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MURCEI Stall, nii. 12, 1964t M7-IW 14

MPIG'TAOSt pipay stool# "tAI rolling
Abstract i 'Thii- piercerability of KhWiaf stool is -harply ikor6v@d'by
,incrcaain(: the mndrol slopci up to 3.10 (critical roduction'hers reaches,-...
13%, ithat a a clop,-) wigle of..90--only around 10
- taborathr7 and industrial expcrimento ahKrr that the imandrel
i
.rpm' a (in the range of 70-310 rpm) 'ha
vqqittle offect'an the pierce-
ability, of this atual. Incrouing the ==bcr of x1mis of the mandrel
Mmade it posoibla to increase pradu4ti@ity bY'15% for M
=Uu
@
@
@

card 2A
7

L 52327-65
ACCESSION NRs AP5015665
The main factor,affecting t1to Intornal surface quality Or C402,Wj
I
for a change of rpii, in the degroo of strengthening and weakening pro-
s o
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wallconing AO
not haye time to occur and thareforop a change of rm.-I
of the mandrol in the piox#ng of Kh.106 billeA dooo not affect,'
piorceabiUty. orig. art. has 2 figures and 3 formulas,
13BOGIATXONi Nikopollskiy yushwtrubnyy- marod(Nikopoll TubnatpbW PIms)
SUEMTrEDo 00 SHOLo 00 BJB 00120 MR n
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SA -0 YL F NT v'I If TYe I 'arikimx Cand Tech Sci -- ffts.--)
"Pec,iliarities of the oneration of semiconOuctor diodes
and triodes at high voltage levels.0 "os, 1958, 7 pp (Vin
of q;gher rducation TISSR. @fts Order bf Lenin Aviation Inst
im Sergo Ordzhonikidze) 110 co::.Irs (KL, 27-58, 112)
139

SAJ,11OYLENKO, V. I.
V. I. Samoylenok, "Use of the capacity of an n-p Junction in radio engineering apparatus."
Scientific Session Devoted to "Radio Day". May 1958, Tr@rezervizdat, Moscow, 9 Sep 58. @
Properties of the capacity of an n-p Junction and its radio engineering applications
are analyzed. It is remarked that the capacity of n-p junctions (semiconducting capacity)
can be used in a train with semiconducting triodes and diodes. A special impurity dis-
tribution can guarantee different dependences of the capacity on the voltage and also high
values of the differential resistances*

SAMOYLXM
Special features in the therml behavior of semiconductor junction
diodes and trIoAes associated wit great collector biaseo..Izv.
vVs. ucheb. zav,'; radiotekh,* no,'W73-177 158. (Knu 110)
1. RekomendovansAmfedroy teoreticheek1kh onnov radiotekhniki
Moelcorskogo ordena, Lenina aviatsionnogo, inatituta, imeni Sergo
Ordzhonikidze.
(Transistors)

SAMYLENKO, V.I.
Amplitude modulation with utilization of the n-p transition capacitance.
Nauch.dokl.vys.shkoly; radiotekh. i elektron. no.2:226-232 1 58-
(MIR& 12:1)
1. Kafedra teoreticheskoy radiotekbniki Moskovskogo aviatelonnog.
instituta.
(Modulation (Electronics))

SOV/142-58-4-10/30
AUTHOR: Samoylenko, V.I.
TITLE: Parametric Amplificittion Using the Capacitance of the
p-n Junction (Parametrichesko e usileniye s ispol,zov-
aniyem yemkosti, p-n perekhoda@
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy - Radiotekhnika,
1958., Nr 4, pp 451_458 (USSR)
ABSTRACT: The paper-describes the amplification of oscillations
by changing parameter of the linear system (capaci-
tance of-the p-n Junction) under the action of a con-
trol signal. Both power and voltage amplification can
-be achieved by parametric amplification. The amplifier
can use either positive or negative feed-back. When
selecting parametersy the amplifier can work as a
trigger. First the working principle of the parametric
amplifier is examined. Formulae for the voltage ampli-
fication factor are derived from the relation of.the
p-n Junction capacitance to the bias voltage for alloy-
Card 1/4 type Junction semi-conductor diodes and triodes. The

sov/142-58-4-10/30
Parametric Amplification Using the Capacitance of the p-n Junction
be achieved with current semi-conductor diodes and
triodes. Therefore, parametric amplifiers can be used
for amplifying frequencies up to 10-15 Mc. Power sup-
ply circuit variants are studied. Thd analysis shows
that the parametric semi-conductor amplifier can be
used for amplifying de voltages, video frequencies,
with band amplifiers and the creation of various pulse
circuits. Farametric amplifiers offer considerable
advantages compared with both tube amplifiers and
serai-conductor amplifiers. There are 5 sets of circuit
diagrams, 8 graphs and 1 non-Soviet reference.
ASSOCIATION: Kafedra teoreticheskikh osnov radiotekhniki Moskovs-
kojro ordena Lenina aviatsionnogo instituta imeni Sergo
Orcizhonikidze (Chair for the Theoretical Bases of
Radio Engineering, Moscow Order of Lenin Aviation
Institute imeni Sergo Ordzhonikidze)
Card 3/4

AUTHOR: Samoylenko; V. 1.- 108-13
TJ7!,',A: Theory@and Computation of the Frequency Modulators With
Application of 'SemiL;onductive Control Elements
(Teoriyta i rasch9t chastotnykh modulyatorov s primeneniy6m
poluprovodnikovykh upravlyayu5hchikh elementov)
Ptadiotekhnika, 1958, V010 13, Nr 5, pyo 64-71 03310

;BSTRACT: Here the frequency variation in the autogenerator by means
of the control,capacitance of the n-p-transition of the
semiconductor diodes and triodes is investigated. Mhis can
be applied in a wide frequency ranee to frequency riodulatiou
as well as in case of a reconstruction of the autogeneration.
Thq eouation (4) is derived. It expresses the modul-ition
charactei,istic in the analytical form. For the given
@;emiconductor_device types a maximum possible cauntervoltage
E. exists at which the n-p-transition is not yet
max
destroyed. Above this voltage breakdown takes olace. The
enuation (6) reproduces-the limits for the value ofthe
-i r d 1 control capacitance. C The equation (7) serves !',r the
k)'

Theory -id Computation of the Frequency Yodulators 108-13-5-8/11
7-'.ith Application of Seiniconductive Control, Elements
determination of the fro'quercy overlap. For the given
semiconductor-device type C is constant. Therefore the
11 Ik ki
Fr,?quency overlap of the autogenerator is a function cf the
transformation factor k . An optimum point for the
additional connection of' the control element oT the
concerned type exists at which the Trequency overlap is
a maximum. To find this point., eq. (7)i--m-t be differentiated
with respect to k and7the der.Lvat-ive must be set equal to
zerc. An eauation of the fourth degrc!e is obtained. In
general form this equation can'not be -olved. The roots of
this equation are found graphically and according to these
data the diagrams are constructed from which then the
optimum point'is obtained.@ On occasion of designing the
frequency inodulation with relatively low frequency deviation
the control capa@itance is to be connected to this point
where the maximum steepness of the modulation characteristic
is guarantLed. Here +his point is determined. The equation
(13) for the steepness of the modulation characteristic is
Card 0 derfved. From this can be seen which measures must.be ta"-C-n

Thi-.-ry Anti romrutation of the V@requcncy 140JULE(tOrs 1
Application of Semiconductive Control -2'Irwilerits
for Lhe increase of trie
chavacLeristic. Finally the senitence in tile of
a frequency modulator is nhown. !:iLkre are 4 fiFUrc-s.
@)ctober 1j, 1957
V 1@ i H i, E, @ibrary of Congress
1. Frequency modulators-Analysis

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&12 awn.

9(4) PHASE I BOOK EXPLOITATION SOV/1828
Samoylenko, Vitaliy Ivanovich
- ----------
Osobennosti raboty poluprovodnikovykh diodov i triodov pri bollshikh
napryazheniyakh (Characteristics of the Performance of Crystal
Diodes and Transistors at High Voltages) Moscow, Oborongiz, 1959.
53 P. (series: Moscow. Aviatsiony institut imeni. Sergo
Ordzhonikidze. Trudy, vyp. 103) 19,150 copies printed.
Ed.: K.I. Grigorash; Tech. Ed.: L.A. Garnukhina; Managing Ed,:
A.S. Zaymovskaya, Engineer.
PURPOSE: The book Is intended for engineers and technicians con-
cerned with the use of crystal diodes and transistors in radio
circuits, and also for students of radio engineering vuzes.
COVERAGE; The author investigates the effect of transistor operating
conditions on collector function capacitance. He also discusses
practical circuits using collector capacitance for frequency
modulation, phas6 modulation, amplitude modulation, parametric
amplification, automatic frequency control.' and delay line control.
Card 1/3

Characteristics of the Performance (Cont.) SOV/1828
Data for selecting operating conditions of these circuits are pre-
sentedj and experimental circuits of P6-A and P6-B junction tran-
sis@or oscillators are discussed. The author thanks Professor
I.S. Gonorovskiy, Doctor of Technical Sciences, V.N. Dulin,
A.I. Ivanov-Tsyganov, and A.Ye. Kharybin, Candidates of Technical
Sciences, Senior Instructor N.F. Timofeyev, and Engineer
V.P. Rakhmsinov for reviewing the manuscript . There are 22
references of which 18 are Soviet (including 2 translations) and
4 English.
TABLE OF CONTENTS:
Foreword 3
Ch. 1. Investigation of the Effect of Operating Conditions
on n-p Junction Capacitance 5
1. Variation of n-p junction capacitance with bias voltage 5
2. Investigation of the variation of n-p junction capaci-
tance with the amplitude of high-frequency oscillations 12
3. Variation of collector junction capacitance with
collector current 13
Card 2A

characteristics of the Performance (Cont.) SOV/1828
Ch. II. Use of n-p Junction Capacitapee in Radio Circuits A
1. Amplitude modulation 20
2. Parametric amplification 31
3. Phase modulation 32
4. Frequency modulation 33
Automatic frequency control (AFC) 35
Automatic control of gain (AGC) and amplifier band pass 7
@
7. Artificial delay line with controlled delay O
8. mixer 42
9. Possible use of n-p Junction capacitance for other
problems 42
10. 'Experimental data 43
Ch.III. Investigation of the Variation of the Amplification
Coefficient of Cellector Junction Current with
Collector Junction Voltage 46
Bibliography 54
AVAILABLEt Library of Congress RRZ/ad
6-18-59
Card 3/3

90) SOV/142-2-1-5/22
AUTHORS: Samoylenko, V.I , and Glotov, I.A.
TITLE: Trigger Circuits Using the p-n Junction Capacit-
ance (Triggernyye u8tro tva s ispollzovaniyem
yemkosti p-n perekhoda
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy - radiotekh.-
nika, 1959, Vol 2, Nr 1, pp 38-47 (USSR)
ABSTRACT: The authors investigated the application of the p-n
transition capacitance of semiconductor junction
transistors and diodes in a non-linear LC circuit
for designing trigger circuits. They base their
investigation on the work conducted at the Kafedra
teoreticheskikh osnov radiotekhniki DIAI (Chair of
Theoretical Principles of Radio Engineering of MAI)
LRef 17. The authors explain the functioning prin-
ciple of @nuch a trigger circuit, as shown in figure
2. Further, they analyze the selection of the oper-
ating conditions and the operation speed. In fig-.
ure 4, they show various possible circuit arrange-
Card 1/3 ments, and in figure 5, they present an experimental

SOV/142-2-1,5/22
Trigger Circuits Using the p-rn,';W@Uq* Capacitance
There are 3 circuit djagrams, 3 graphaq 1 oscil-
iogram'and 5 referienoes, 1 of which is American
and 4 Soviet,
ASSOCIATION: Kafedra tepretichelikikh oanov radiotekhniki Moskov-
skogo ordena. Lenina aviatsionnogo instituta imeni
Sergo Ordzhonikidze (Chair of Theoretical Princi-
tles of Rad@o Engineering of the Mpgoow 'Order of Lenin
Aviation Institute #eni Sergo Qrdzhonikidze)
SUBMITTED: May 16, 1950 initially)
June 16, 1958 @after-rovision)
Card 3/3

06@
SOV/142-2-4-17/26
Remarks
term "ploskiy perekhod" (junction) which should be cal-
led "ploskostnyy perekhod". Further, they recommend
some changes in the selection of symbols for designa-
ting transistor and diode parameters.
ASSOCIATION: Moskovskiy aviatsionnyy institut imeni Sergo Ordzb.-Dni-
kidze (Moscow Aviation Institute imeni Sergo Ordzhoni-
kidze)
SUBMITTED: February 21, 1959
Card 2/2

M C Y IV k 0@
PHASE11 BOOK EXPLOITATION SOV/5194
Moscow. Aviatelonnyy 1nstItut In. Berge, Ordzhonikidze
Primenenlys, po1uprovodn1kovykh_prIborov v aviatelonnykh radio-
tekhnichookikh ustroyetvakh; sbornik statey (Use of Semicondue-
tor Devises In Aviation Radio-Ingineering Installationsi Col-
lection of Articles) Moscow, Oborongiz, 1960. 100 p. (Series:
Itst Trudy, v". 128) T,650 coPies prInt*d,
Sponsoring Ageneles: NInIsterstvo v"shego I arednego spetsIallnogo,
obrazovanlya RBPSR; Moskovskiy ordena Lenin& aviatelonno Institut
Iment Sergo Ordzhonikidze.
Ed. (Title Vage)i 1. 5. Gonorovskly, Doctor of Technical Soleness,
Professorl Managing Ed.t A. S. Zaymovskaya, Engineer; Ed.-(Ih-
side book)s S. 1. Bunshtsyn, Engineer; Tech. Ed.: L. A. GarnukhtuL
PURPOSE: This collection of articles is intended for scientific and
technical personnel concerned with the utilization of semicon-
ductor devices In radio engineering.
Card 1/4

Use of Semiconductor Devices (Cont. SOV/5194
Sidorov, Yu. I. [Engineer]. Modern Semiconductor Variable
Capacitors 19
Demin., V. P. [Engineer]. Concerning the Natural Oscilla-
tions in a Circuit With P-N Junction Capacitance 28
Samoylenko, V, I. Effect of a Semiconductor Voltage
Limiter on the Properties of an Oscillatory Circuit 38
Glotov, I. A. [Engineer]. Trigger Phenomena in an LC-
Circuit With a Nonlinear Capacitance of P-N Junction 46
Samoylenko, V.-I. and A. M. Shestopalov [Engineer). Some
Probli-m-s-5177ara- tric Amplification With the Use of P-N
Junction Capacitance 64
Petrov, A. A. (Engineer]. Concerning the Problem of Switch-
ing Into a Master Oscillator Circuit a Semiconductor Element
Controlling Its Frequency 74
Card 3/4

20888
S/535/60/000/128/ooi/oo8
E036/EJ-35
The p-n Junction Capacitance
account. The author discusses not only simple junctions but
junctions included in transistors. Thus the diffusion capacitance
associated with current carriers in the base region is also taken
into account. At frequencies higher than the cut-off frequency
the diffusion capacitance can be neglected because the time for
diffusion of carriers from emitter to collector is too long
compared to the period of oscillation. In the absence of emitter
current only the saturation current of the junction need be
considered. The origin of this current is outlined qualitatively
as well as the change of current with applied voltage. This is
not amenable to engineering calculation at present. Some typical
values of capacitance change with current are quoted for Russian
transistors and an estimate is made of temperature stability of the
capacitance due to current changes with temperature which gives
&c/C = lo-5 per degree, i.e. it is.effectively stable. If the
junction is acting as a rectifier or detector the bias is of the
order of the amplitude of the high frequency oscillations and the
capacitance is then a function of the amplitude of these
Card 2/4

S/535/6o/ooo/128/001/008
E036/EI35
The p,-n Junction Capacitance
oscillations when they are large. It is necessary to consider
whether the generator is a current or voltage generator. An
expression is derived for capacitance as a function of the
amplitude of the sinusoidal voltage and shows that the capacitance
increases with increasing voltage. A simple calculation shows
that diffusion processes can be neglected and thus capacitance
is independent of frequency3 up to 500 Dic/s this has been shown to
hold experimentally. At high frequencies the parallel re5istance
can be neglected and thus gives high Ws. The p-n junction
is thus very stable both with temperature and frequency changes.
Various applications are briefly listed: amplitude and phase
modulaters, parametric anplifiers, etc.
There are I figure and 4 referencess I Soviet and 3 ncn-Soviet.
Card 3/4

208813
S/535/6o/ooo/128/ool/oO
E036/EI35
The p-n Junction Capacitance
English Language Referen;@;psx
Ref.2. W. Shockley; Theory of,Electronic Semiconductors.
(Russian translation.), Moscow, 1953@
Ref.3.- R.L. Fritchardg Frequency Variation of Junction-
transis,ror Parameters. PIRE, 1954, No.5.
Ref.4., W, Shocltleyi Theory of Junction in Semiconductors and in
p.---n Junct.ion Transistors. Bell System Technical Journal,
Card 4/4

-0591
S/535/6o/Ooo/1-28/005/oo8
@o E036/E135
AUTHORS: y1enko V@ 1. Candidate of Technical Se ierces, and
6 @Osio@pa
lov@,A.M- Engineer
TITLE: Some Questions Concerning Parametric Amplification
Using p.-n Junction Capacitance
IERIODICAL., Moscow, A-Viatsionnyy institut, Trudy, NO.128, Moscow,
L960, Primeneniye poluprovodnikovykh priborov v
aviatsionnykh radiotekhnicheskikh ustroystvakh;
sbornik statey, pp. 64-7-1,
T E)(T lxi previously published work (Refs. I and 4)
parametric amplification using resonant circuits was considered.
In the present paper the authors consider the uses of voltage
divider and bridge type circuits for amplification. The voltage
divider circuit is shown in Figl. The high frequency source
voltage is U.J1 which is in series with the p-n junction
capaiz;itance C and the resistance 11.1. A detector with a 'load
RH is connected across R1. The ca@wacitance C is varied at a
comparatively low frequency by the voltage UBX- The junction is
Card 1/ 5

20891
S/535/6o/ooo/126/005/008
E036/E135
Some Questions Concerning Farametric Amplification Using p-n
Junct ion Capacitance
reverse biased by the voltage E The output voltage,
CM I
amplitude modulated., appears across RW Power and current gain
are possible but not voltage gain. This simple circuit is then
analyzed to obtain expressions for -voltage, current and power gain.
The current and power gain in this circuit for quoted parameters
are 40 and .10. An alternative, simpler form of the circuit is
gi,ven in Fig.2; here the p--n junction (C) is fed from a high
frequency current generator. A similar analysis is carried out in
this cast-, an ideal detector also being assumed. Shunting of the
junction by the Jetectov is taken into considevation. 1n this
circuit the maximum power gain is 1/4 the ratio of the input
resistance of the circuit to the load resistance, compared to 1/16
of this ratio in the first circuit. in Fig.4 the bridge circuit
amplifier with a p-n junction capacitance is shown, in which the
high frequency is applied through the sniall capacitance C.
The reverse blases are applied to the four p-n junct�ons C
through the potentiometer Rl. The signal to be amplified is
Card 2/ 5

20891
S/535/6o/ooo/128/005/008
E036/Ei35
Some Questions Concerning Parametric Amplification Using p-n
Junction Capacitance
applied to the same diagonal an the,high freqi1ency circuit through
the coil L. The output is taken from the oth.r diagonal. The
output voltage is calculated using a simple equivalent circuit.
The signal upsets the balance of the bridge to give rise to the
Output voltage. As for the other circuits no voltage gain ia
obtained but the power gain is 1/4 the ratio of input to output
resistance and the current gain 1/2 this ratio. A larger voltage
may be applied than in the other circuits, 2-3 volts, and a
further advantage is that a voltage appears at the output only when
an input signal is present. In the analysis it.is assumed that
C 10 K, n
KO (U + YK
where U is the applied voltage and @OK the voltage across the
junction at zero applied volts and n = 1/2. Values of n in
excess of 1/2 would improve the performance of the circuits.
There are 5 figures and 4 referencesi 3 Soviet and I English.
Car-d 3/5

S/535/6o/ooo/128/005/00
Some Questions Concerning E036/E135 I
Ref.4: H. Urkowitz, A ferroelectric amplifier.
Journal of the Franklin Institute# 1058, No. 12.
I CP D
Fig.1
Card 4/5

:,0891
S/535/60/OoO/128/005/008
Some (junstions Concerning.* ... Eo36/EI35
Fig. 2
Card 5/5
VLW

s/lo9/60/065/010/021/031'
(11.3 IISJII 8-rjj lit/) F,033/E415'
1. 1:-
AUTHOR: Samoylenko, V.I.
TITLE: Level Discriminator Using p-n Junction Capacity'
10,
PERIODICAL: Radiotekhnika.i elektronika, ig6o, Vol-5, No.
PP-1720-1725
TEXT: The article describes a semidonductor gating (discriminato;r).,:@
1.
circuit, which gives a rectified output wheA the input signa
(pulsed or d.c.) voltage iies between two particular adjustable
levels. The input voltage controlethe aniount.-of de-tuning of
r
L-C circuit (relative to a frequency w. front oscillator) b
y
changing the capacity of-a p-n junction'transistor coupled.Anto.the-1,',-@
tuned circuit. A voltage appears at the output only when the.
amplitude of the oscillation across the tuned circuit exceeds*a
determined value (Uk > E), i.e. when the input@voltage is such.
N.,
that the circuit is tlxned within two limits, on6 on either'side.'v.
resonance Wo. The basic "pr:LncJple" diagram is given in Fig.l-
If V6 is the input voltage.at which the resonant circuit-.is tun6d'@._,
to the oscillation frequency wo and the Q' factor of the circuit@-,,,
is high, then
Card 115

21598
s/loq/66/005/010/021/0j:
E-033/-7415
Level Discriminator
G
+
AV, G QU,2
+2 U
VO + Q A)
Where da VO V Vo, is the, increment.of the input'voltageV
at which the amplitude of the oscillation in the circifit become,s:,_,,,@t@
equal to the set reference voltage E,. CO Iis the.tuned@
circuit capacitor (without the capacity of the p-n junction)*,
L
2
C Ic CKO
p
0 +
A
where k is the coupling factor connecting the p-n junction
capacity into the tuned circuit, CKO is the p-n junction
the cointact potential
capacity with no bias voltage, YK is A
difference of the p-n junction. the relative
From Eq. (7)"
characteristic of the discriminator (of the gate) A U is
obtained
A
Card Z/ 5@

S/109/60/005/010/021/031"
Level Discriminator
... E033/E415
C
+
G
AU-. 4 P IQUON (8)
Q
Ve VZ
in which V is neglected as it is small compa@ed to the control
K
voltage V. Eq.(8) determines the upper and lower limits of the
voltages passed by the gate. The optimum values of Co and L
(the circuit inductance) are given by
C, Q AU
0 CP.
GV2 VO
L=
OPO (CO+CP (12)
The "gate width" (Eq.(8) depends on
Q and hence on the
resistance rK of the p-n junction which is temperature-
sensitive. To reduce the dependence of the gate wtdth on
temperature, it is ne
cessary to reduce the Q factor, the
characteristic impedance of the'oscillatory circuit a, the
Card 3/5

S/109/60/005/010/021/ 31
Level Discriminator ... E033/E415
coupling factor k and to select semiconductors wit1h minimum
dependence on temperature. A full circuit diairam is given an&,;-
described. The oscillation frequency was 16.Mc/s. The circuit.@
t
was tested under pulsed operation and'was satisfactory with Inpu
signal pulses of duration greater than 1.5 microseco#ds and
repetition frequencies up to 10 kc/s. The gate width,was 6 to
8% of the pulse amplitude and the output signal amplitude was
about 5 volts. Acknowledgments are expressed to B.I.Krasnov for
his assistance in the experimental work. There are,,2 figures and'-;,,.@',
I Soviet reference.
-2: i-@
SUBMITTED: December 19, 1959
)7
C
CO
R9q,
V
Card 4/ 5

Le@el Discriminator ... S/109/60/005/010/021/031-'
E033/E415
Fif4. 2.
Legend:
Block
diagram
of the
test
apparatus.
Card 5/5

ALEKSANDROV, B.I.; IMHIN,, P.A.; DROZD.. S.N.; SAIMOYLENKO. V.I.
7.
Effect of heat treatment and of the dimnsional factor on the
strength of bolts. Sbor.trud.Inst.inaih.i avtom.AN BSSR no.2:65-80
161. MRA 15:3)
(Bolts and nuts-Testing)

ALFMANDROT, B.I.,kand.tekh.nauk.; SAMOYLENKO, V.I.,nladshii nauchnyi sotrudnik.
------------ I
Influence of heat treatment and measuring factor on the strength of bolts.
Acta techn Bing 35/36:@':131-338 161

369hl
S/142/61/oo4/oo6/002/017
E192/E382
7
AUTHORS: Samoylenko, V.I. and Zlochevskiy, Ye-M.
TITLE: Theory of dynamic processes in a parametron based on
the capacitance of an n-p-Junction
PERIODICAL: Izvestiya vysshikh uchobnyl-,h zavedeniy,
Radiotekhnika, vol. 4, no. 6, 1961, 64o - 652
TEXT: The system considered is illustrated in Fig. 1 and the
solution of the equation describing its operation is based on the
asymptotic methods developed by N.N. Bogolyubov and
Yu.A. Mitropol'skiy (Asymptotic methods in the theory of non-
linear oscillations (Asimptoticheskiye metody v teorii
nelineynykh kolebaniy), Gosflzmatlzdati 1958*- Ref. 5). The
capacitance C in fig. 1 is the differential capacitance of
an n-p junction which can approximately be expressed as:

Theory of' dynamic processes ...
CK C0
1
1 U
I + -
2 E + YK
s/l42/6i/oo4/oo6/002/0l7
B192/9382
(4)
which i@epresents the capacitanc
-s-th er e C0CKO e
tPK '+ E
at the operating point,
CKO is the capacitance in the absence of an external
voltage,
YK is the contact potential differencet
U is the excitation voltage across the capacitance, and
E is the biasing voltage at the operating point.
It is shown that the second approxLmationto the solution of the
Card 2/6

S/142/61/004/006/oO2/017
Theory of dynamic processes 9192/F,382
characteristic equation of the system is given by:
a to - U,
t = a cos,1 - t + - cos(,t + 29 + -sin(-Jt - 29 (6)
+ J)
2 6 3
U PE +
where U/(E + 9K)V to 0 K 6 =-r/L and
W = 1/( VLC 0 The amplitude a and the phase angle
which are "slowly"-changing functions of time, can be found
from the following equations:
Card 3/6

S/142/61/004/006/oO2/017
Theory of dynamic processes @EIWE382
2
da ba W
+ - a cos 29
dt 2
2 2 2 (7)
d 3 w a toW
+ - s in 2
dt 2 8 4V
The above equations are analyzed for the steady state, when
d(x/dt = d(Y/dt = 0 and the results are shown in some graphs.
Since Ecr. (7) cannot be solved analytically, they are evaluated
approximately for a number of special cases by employing the
-ethod of numerical integration. It is concluded from the
analysis that, unlilte In a nox@inal oscillator, the shape and
duration of the tx-ans:ient processes in a pax*araetron depend not
only on amplitude but also onthe phase of the oscillations in
the circuit at the instant of applying the'pump signal.
Card 4/6

Theory of dynamic processes ....
s/142/61/oo4/oO6/OO2/O17
E192/E382
For certain initial conditions the amplitude of the oscillations
in the circuit may decrease and later increase. The duration of
the transient depends on the initial conditions as well as on the
quality factor of the circuit and the amplitude of the pump
signal. The duration of the transient can amount to tens and
even hundreds of cycles of the pump signal under normal conditions.
The duration can be arbitrarily large under*certain zero initial
conditions. In general, the amplitude and the phase transient
is oscillatory. Three stable states can exist in a parametron
under certain conditions: absence of oscillations and presence
of oscillations with two possible phase states.
There are 9 figures.
ASSOCIATION: Kafedra Moskovskogo aviatsionnogo instituta
im. Sergo Ordzhonikidze (Department of the
Moscow Aviation Institute im. Sergo Ordzhonikidze)
SUBMITTED: February 2, 1961
Card 5/6

Theory of dynamic processes # ...
Fig. Is
L i
E
- UostriV
r,
j
dard 6/6

SAMOYIZNKOI V. I.
@ffect of a tmnsistor detector on the characteristics of an
oscillatory circuit. Trudy MAI no.150:11-22 162.
(MIRA 15'. 10)
(Electric networks) (Transistors)

SAMOYLENKO, V. T.; FINOGENOV, B. S.
Steady-state conditions in a two-stage parametric amplifier
containing a nonlinear p-n junction capacitance. Trudy MAI
no.150:39-61 162. (MIRA 15:10)
(Parametric amplifiers)

PAMMUNNO) V. If - MEZENTSEV) 1. 1.
Heat factors in the operation of transistor devices. Trady MkI
no.150:72-92 162. (MIn 15:10)

42673
S/142/62/003/005/009/009
P,192/E38-2-
AUTHOR: Samoylenko, V.I.
TITLE: Lai-neari,,@ @tion @of s@awtooth voltage by semiconductor
devices
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniyl
Radiotekhnika, v- 5, no- 5, 1962, 645 - 646
TEXT: It is necessary that S = dU/dt = constantwhen chargin'g
a capacitance from a voltage source,if the voltage across the
condenser U is to rise linearly. If the capacitance C is
charged from a source E through a resistance R it is necessary
that the capacitance obey the relationship:
E - U
C
SR
-5uch a nonlinear capacitance can be provided by an n-p sem1conductor
junction. A circuit of this type is illustrated in Fig. 2, where
C is a fixed capacitance and C is the capacitance of the
0
diode. By using the known expression for the capacitance of the
Card 1/3

Linearization of ....
diode it is shown that:
S/142/62/005/005/009/009
E192/E382@
dU E-U
R (C. + C..@. @/T
U +'P"I
(2)
where
91K
Cmtn C. V + IP
Ic
(2a)
By integrating Eq. (2), a number of curves showing U/E as a
function of t/-I-- (where -r- = R(C + C are plotted for
0 K min
vario.is values of a = C The curves show that for a
K min/Co
between 0-15 and 0.2 the linearity of the output voltage is
greatly improved as compared with an exponential waveform corres-;
ponding to a = 0 Thus, for example, the relative nonlinearity;
coefficient, which is 15% at a 0 .is reduced to 3% at a 0.2.
There are 3 figures.
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