SCIENTIFIC ABSTRACT VAVILOV, V.S. - VAVILOV, V.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001859030008-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 48
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 8
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

L 4212'-66
Act .-MR, AP6024453
level Ze-0.09 ev belongs to the association of the oxygen stam with a point-contact
defect, the association appears only an a rerult of irradiation at room temperature,
and it Is analogous to the A-center in silicou. Germwim of the a-type, alloyed with
oxygen to a concenration of 5.1017 ca-3, proved to be more radiation stable than n-
type mterial with the @me resistivity, but with a considerably lower oxygen concene-
tration. Spacliesne of n-type Ge with an oxygen concentration of ~.5.lo17 CS-3 do not
change their type of conductivity upon Irradiation by a flux up to 6.1018 cu-2, and
the lifetim starts to decrease only after irradiation with a flux on the order of
3
loll cg-2. The authors express their deep gratitude to M, D. Tyapki" for providin
the oxylleis-alloyed crystal. Orig. art. has: 4 -.!Igurei. 1261
SUB COM 20j SUM DAM 02Aug65/ OILIC Ws 002/ ON WWt 003/ ATO PUSS:404-5
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4
AP6026678 SOURCE CODE: IJII/0181/GG/008/008/2330/2335
AU'fHOR: Vavilov, V. 8,; Ni~khodnova, 1. A.; SIMI, A. R.; Yunovich, A. E.
....... ........
ORG: Moscow State. (Iniverqty im. M. V. Loinonosov (Noskovskly gosudariAvennyy
universitat)
TIT LE: Radiative rccom~lnatlon of GaSb p-n junctions obtained by crystal pulling from a melt
1 SOURCE: Fizika tverdogo tela, v.,8, no. 8, 1966, 2330-2335
;.'TOPIC TAGS: &LJ ~ium antimonide, single crystal growing, recombination spectrum, crystal
donor, crystal Impurity
ABSTRACT: P-n junctions In single crystals of GaSb were obtained by growing a crystal on a
seed containing a donor (Te) (or acceptor) impurity from a melt h1loyed with an acceptfr (Zn,
Cd) (or respectively donor) Impurity. The crystals were grown In a hydrogen atmosphere.
The seeds were oriented along the direction . Primary attention is devoted to Lhe de-
pendence of the radiative rccombinu."on spectra on the concentration of impurities in the area
of the p-n junction and on the Injection level. In partir-aar, low excitation levelB (current den-
2
sity of about 1 a/cm ) were investigated. The depeDience of energy at the enilsolon spectral
1 peak on the voltage across the p-n junction was obsarved at small currents and large coneen-
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ACC NRs AP6026678
trations of Impurities. This dependence Is apparently due tc, the tunnel effect, including clec-
tron transitions to the "tall" of the density curve of the st.,Aes of the conduction band. Orig.
art. has: 5 figures.
SUB CODE: 20/ SUBM DATE: 27Dec65/ ORIG REF: 004/ OTH REF: 009
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t 01(K1-67 FVr(1)/Wr(m)/FWP(0/PTT TJP(c) JD/00
ACC NR% AP6030057 009/2598/2604
AUTHOR: -Vavilov, V. S. ; Plotnikov, A. F. Sokolova. A. A. ?3
ORG., -physics Institute im. P. N. Lebedev, AN SSSR, Moscow (Fizicheskiy
institut AN SSSR)
TITLE- Oscillating photoconductiviV of cadmium telluride and its connection with
exciton absorption -; -7 -T 7
SOURCE: Fi---ika tverdogo tela, v. 8, no. 9, 1966, 2598-2604
TOPIC TAGS: photoconductivity, cadmium telluride, exciton, exciton absorption,
absorption spectrum, absorption coefficient, heat of dissociation, impurity center
ABSTRACT: The spectra of photoconductivity, optical absorption, and reflection
of CdTe crystals near the basic absorption band have been obtained at 80 and 15K.
A thin structure of photoconductivity spectra is detected. It is established that the
dependence of the absorption coefficient on photon energy is ilonmonotonic. The
peak reflection in the photon energy region close to 1. 58 ev is noted at 80K. The
absorption and reflection observed are interpreted to be of the ex';iton type. The
structure of photoconductivity spectra is related to the development of excitons and
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ACC NR- AP6030957
their heat of dissociation with the participation of impurity centers. The authors
thank B. M. Vul, L. V. Keldysh, N. A Penin, and E. L. Nolle for their valuable 1
remarks and cr-iiicism of the work, 9. e vedev and S,- N. Maksimovskiy for
furnishing the samples, and N. N. Borzunov for his considerable assistance in
preparing them for the experiments. Orig. art. has: 4 figures. [Based on authors'!
abstract] INTI I
SUB CODE: 20/ SUBM DATE: 14Jan66/ ORIG REF: 003/ OTH REF: 014/

L 01821-67 Ew'r(u0/r/LMP( WEN IJpk C JD
ACC N1-
AP6030964 SOURCE CODE: UR/0181/GG/008/009/2GGO/11,663
B. ; Chanbarisov, V. Sh.
AUTHOM. Vavilov, V. S. ; Stopachinr7kiy,_
ORG: Physics Institute im. P. N. Lebodev AN SSSR, MosCl-,'vi (Fi7icheskiy institut
AN SSSR)
TITLE : Oscillations in cadmium sulfide optical absorption arising in strong
electrical fields ;- 7
SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2660-2663
TOPIC TAGS: optical absorption, absorption coefficient, cadmium, cadmium
sulfide
ABSTRACT: A study of CdS monocrystals (,,-.,10- 20 ^ in thickness), at the temper~,-
ature of liquid nitrogen, reveals an oscillating component arising in a strong electrid
field, which is in spectral dependence on We coefficient of absorption. The period
of oncillationo T wa" found to be c(Itial to (where N, io field intenflity and d
is the lattice constant in the direction of the field). If '.he scattering of carriers is
taken into account, difficulties are encountered in explaining this phenomenon in

1 011 ~i2 1-67
ACC NR
AP6030964
terms of a transition between discrete Wannier levels. The authors thank B. -11.
L. K. Kel~Xsh, and YL1~. K~urslki~ for discussing the findings obtained. Orig..
~"art. has- 4 figures. (Based on authors' abstract] [SPI
SUB CODE: 20/ SUBM DATE: 3lJan66/ ORIG REF: 004/ OTH REF: 01-;/
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L 2982-66 EWA (k)/FiM/E1-,T(1)/1:,4T (n)IZEC(k) -2/E f C1T11~,1P(t)11,!Te(b)/&'iA On'
)-2/1;]A(h)
/Pow/
ACCESSION NR: AP5023360 JD UR/0020/65/164/001/0073/0074
AUTHOR: Vavilov, V. S.; Nolle, E. V.
6 3,
TITLE: Cadmium telluri '4lectron-beam pumped Wre Inner
de
SOURCE: AN SSSR. Doklac'~y, Y. 164, no. 1, 1965, 73-74
TOPIC TAG6; laserg semiconductor laser, CdTe, electron beam laser, recombination
radiation
ABSTRACT: The authors report attaining laser action in CdTe pumped by a beam of
electrons. A sample 0.4 x 0.4 x 0.4 mm was cleaved from n-type CdTe with a hole
concentration of 10" cni-3 at room temperature. The polished front face of the
sample tra.9 perpendicular to the two polished faces forming the cavity. The
sample was attached to the cold finger of a. cryostat maintained at 10-15K. The
beam of 150-kev electrons was incident on the front face of the sample. The
beam current was supplied in 0.4-psee pulses at a rate of 10 pulses pe? second.
The short-wavelength radiation emitted perpendicular to the polished faces forming;
the cavity was shifted 20-30 a toward the longer wavelengths, as compared with
radiaticn emitted from the front face exposed to the electron beam. When the curr~nt-
[C~ensity war, increased from 0.3 to 1 amp/cm2, the intensity of emission Increased
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P6 CESSI'ON- N-R: --- AP502-3-36o
1" by approximately two orders of magnitude (see Fig. I of Enclosure2. Simultaneously,
the width at half waximum accreased from 25 ~ to approximately 3 A (Fig. 2). At :~
a current density of 1 amp/cm? the divergence in the horizontal plane perpendicular
to the front face was about 150. At an input power of the exciting electrons equal
to 300 w, the output power within a solid angle of 150 was not less than 0.3 W.
'The narrowing of 'he spectral line to a value le-se than kT, a sharp increase in
intensity, and th" arance of directionallty at a current density of 1 amp/cm2
e appe
indicated the onset of stimulated emission. The stimulated emission was attributed
to exciton transitions. Orig. art. hEw: 2 figures.
ASSOCIAT ION: Fizicheskiy institut im. P. 11. Lebedeva Akademii nauk SSSR (Physice
Institute, Acadeqr of Sciences SSSR)
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w -
ta
.ito a
ENCL4DSURE: 01
Fig. 1. The intensity of emission I (in
relative units) as a function of current-
density j
1.,w
41 41 44 ITY,
amp/cm,
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A3 v
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0*
42 -.1
A- amp/cm2
rig. 2. Variation of the linewidth vith
the current density
1 j 0.3 amp/cm2; 2 J 0.54 amp/cm2
3 j 1.1 amp/cm2.
mrwsm: 02

L 1704-M LJF(c) WH
ACC NR: AP6003761 SOURCE CODE: UR/0181/66/008/001/0003/0008
AUTHOR: Konorova, Ye. A.; Kozlov, S. F,; Vavilov, V. S.
ORG: Physics Institute im. P. N. Lebedev, AN SSSR, Moscow (Fizicheskiy institut AN/~~
SSSR)
;~ /' 11
TITLE- Ionization currents in diamond during Irradiation by electrons with energies from
500 to 1, 000 kev
SOURCE: Mika tverdogo tela, v. 8, no. 1, 1966, 3-8
TOPIC TAGS: diamond, Ionization counter, Impact Ionization, electron bombardment
ABSTRACT: Ear.'.Ier investigations have failed to supply unambiguous conclusions concerning
the counting mechwndsm of diamonds. It Is essential to establish the effectiveness of
high elp-atric.1 fields and to estimate the lifetime of carriers In natural Soviet diamonds.
Consequently, using an electrostatic accelerator supplying 10-6 to 10-5-sco-long single
and periodic electron pulses .(rise time 10-7 see), the present authors showed that with
fields above 103 V/cm there is a departure from linearity in the relationship between the
product of the drift velocities and the earrier lifetime, and the magnitude of the field Ifiee
Fig. 1). The Interpretation of the results Is based on the theoretical results of A.G.
Red
PYA (Phys. Rev. j 94, 526, 1954) and .13. 1. Davydov and N.M. Shmushkevich (UFN, 24,
car - 7Z--

L 17hUft-
ACC PRs AP6003751
rel. units;
Fig. 1. Volt-ampere characteristics
for one of the samples with electron
energies at 500 kev
V/ cm.
19, 1939). The quantiiative results are In fair agreement with the the%;-,,7-. It is shown that
the lifetime of electrons In natural diamond is 10-10 to 10-8 sco, and for nitrogen con-
centration above 1019 cm-3 the lifetime Is determined by the N content. Ni.trogen
concentration was determined by the absorption coefficient of the 7.8p wavelength. However,

L 17404-66
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it Is still unclear why the carrier lifetime appears Independent of the fi-Irl ji. P. the
speed), "The authors thank V. A. Chuyenkov for his comments in t-he fonxid S. I-.
Vintovidn for his help in the measurements." Orig. art. has: I tormula, 5 figures, and
2 teNei-. (081
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-RDW/JD
6093819 SOURCE CODE: UR/0181/66/008/001/0286/0287
AUTHOR: Nolle, E. L.* Vavilov Golubev, G. P.; Mashtakov, V. S.
ORG* Physics Institute im. P. N. Lebedev,AN SSSR, Moscow (Fizicheskly institut
AN SSSR)
TITLE: Induced radiation of cadmium selenide due to electron excitation
SOURCE: Mika tvardogo tela, v. 8? no. 1, 1_7
fS(66, 286-287
TOPIC TAGS: light radiation, radiation intensity, light emission, light excitation
ABSTRACT: An attempt was made to obtain stimulated emission of light from calcium
selenide excitei! with electron pulses. A specimen having the form of a rectangle
parallelepiped 6011 x 400 x 50 p was used for observation of the emission. The elec-
tron beam w.-s Incident on the largest surface of the specimen., while the emission wa
recorded from the specimen's side faces, the distance between which was 600 v. The
measurements were made at 80K. The observation of emisgion from the side faces showed
that the maximum of the spectral band is shifted by 35 A to thk longwave side as
compared with emission recorded from the forward face irradiated with electrons.
When current density was increased from 1 amp/cm2, a sharp increase in emission inten-~
sity was observed along with the simultaneous appearance of the directional effect.of!
emission and a decrease of the width at the half-height of the band from 80 to 15 A.
At a current density of 2.5 amp/cm2, the emission spectrum has an equidistant struc-
LCurd 1/2 -J
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ture in the form of separate stages located 2.6 A from each other. These stages
apparentl are associated with the resonator modes. The maximum of emisslon was at
A - 6950 1. The angle between the directions corresponeing to the values of emission
intensity equal to one-half of the maximum value was 11.0 at a current density of
2.5 amp/CM2. These data indicate that generation of etimulated emission occurs in
cadmium selenide. Orig. art. has: 2 figures. [JAI
SUB CODE: 20/ SUBM DATE: llAug65/ ORIG REFt 003/ OTH RHF: OOl/ ATD PRESS:
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L - 21477-66 -EAV1)/ MV(M) -WG(M)/EV'P(`t)- IJP-(C) -' Rua/JD/AT
A07C NR, AP6006842 SOURCE CODE: UR/Oi8l/66/008/002/0532/0540
AUTHORs Vavilov, V. S.; Nolle, E. L.
ORGs Physics Institute im. P. H. Lebedev, AN SSSR, Hoscow (Fizicheskiyl
instiEut AN MR)
TITLEo Spontaneous and stimulated emission of recombination radiation
of CdTe due to electron excitation
SOURCEt Fitika tvardogo tela, v. 8, no. 2, 19669 532-540
TOPIC TAGSs recombination radiation, recombination emission, single
crystal
ABSTRACTs An investigation wagA m;d%of the emission of recombination
radiation by nonalloyed singleO7td e rystals due to excitation by
150-kev electrons. An electrot~'tiibe -ith a constant high voltage which
generated 150-kev electron pulses wiL.. a duration time from 0.25 to
10 Usac was used. A beam of electrons was focused on a spot I mm in
diameter, where the current density reached 3 amp/cm2. The free path
of 150-kev electrons in CdTe was about 40 P. The emission spectrum
of CdTe due to electron excitation consisted basically of four bands
with photon energies close to 1, 1.4, 1.55, and 1*59 ev at T ~ 1OK.
It was possible that the emiWon bands at 1 and 1.510 ev in,CdTe not
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ACC NR1 AP6006842
Alloyed with impurities w*re associated with recombination through
single- and double-charged acceptor vacancier of cadmium, whose
energy levels are Ev + 0.05 and Ec - 0.6 ev, respectively, The
emsaion band at 1,47 ev could be associated with recombination through
foreign impurities. The intensity of the shorteave band increased
exponentially w.*th the temperature decrease I % T-n, where n - 0.5-1.51
thus indicating the absence of a thermal barrier. The intensity of the
band also increased with the excitation level according th the square
law. At high excitation levels the intensity pendence changed into
i tj,
a linear one in the case of the highest-Pur dTe specimens, thus
indicating the predominance of radiation emiss n recombination.
Apparently, the shortwave emission band was linked with the annihila-
tion of excitons, A direct coherent stimulated radiation emission of
CdTa was oVeerved in a region corresponding to the annihilation of
excLtons at,a cdrrent density exceeding 0.3 tmp/cm2 for 10K and
1 &.Np/cM2 for 80K, Orige art. hast' I f orso.'s-and 8 figu'res& [JAI
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ACC NRi AP6015490 SOURCE CODE: UR/0181/66/008/005/1600/1612,-~
AMHOR: Angelova, L. A.; Vavilov, V. S.; Yunovich, A. E*
ORG: Moscow State University Im. M. V. Lomonosov (Moskovskiy gosudarstvennyy univer-
sitet) - 'I
!
1 41, -k
TITLE: Radiative recombination in GaP during excitation by electric current and by
lelectron beam
SOURCE: Fizika tverdogo tela, v. 8, no. 5, 1966, 1600-1612
TOPIC TAGS: gallium base alloy, semiconductor research, radiative recombination, gal-
liun arsenide
ABSTRACT: S"Uple r stal- of GaP grown non-stoichiometrically with an electron concen-
tration of lalO camn a mobility of 126 cm2/v-sec were excited by a 75 kev elec-
tron beam. The spectra of these non-alloyed n-type crystals were recorded by a ZMR-3
spectrograph and a FEU-28 photomultiplier. Radiative recombination at 77 and 150K was
investigated in the current densi range 7-10 3 'C j < 6 a/cm-2. The excitation level
was 2.1023 sec-1 cm-3 < g < 2-102!YCM sec Within the limits of the measurement
errors, the obtained phonon energy values coincided with data obtained by other re-
Isearchers, e. g., LO = 0.049 1 0.002 ev, AC = 0.014 * 0.002 ev. Specimens of GaP ob-
itained by epitaxia). growing of GaP and GaAs with an electron concentration of 1.7 1018
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ACC NRi AP6015490
and 3.6-1015 cm-3 were also examined at 770K. In the 5500-9500 A range, a broad sp--c-A
trum with a maximum at 7200-7300 A was obtained. Compared to the material obtained
~
from the melt, the radiative intensity of epitaxially grown GaP was smaller by approx~~
!mately* two orders of magnitude. Data obtained from a microscopic analysis of luminesi-
icent diodes preparedfrom alloyed GaP showed that the life span of holes injected in
the n-range is 2-10 1 sec. The work on elec-cron excitation of GaP was carried out in
the Laboratory of Semiconductors of FIAN. The authors thank G. P. Golubev, V. S. Hash"
takov and E. L. Nol'le-of the laboratory for assisting in the work. The autfiio'r-s--iii--0'
thank A. Ya. Nashellskiy, V. P. Maslov and A. V. Lishira for making the specimens
available and G. N. Galkin for his assistance in'ih-ewoik. Orig. art. has: 2 figures.
ISUB CODE: 20/ SUBM 114TE: 11Nov65/ ORIG REF: 002/ OTH REF: 004
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~- "'t -- 7T'n-2F'00i-' 11
CC V-1% AF-03-9.r,
A
AUTHOR: Vayilov, V. S.; Plotnikov, A. F.; Selezueva, M. A, Sokoloya,
A. A.
ORG: Physics Institute im. P. N. Lebedev, AN S6SRP' Mo9cov
(Flzicheskiy institut AN SSSR)
TITLE: Dependence of charge carrier mobility on temperature in GaAs
crystals irradiated vith fast electrons
SOURCE: Fizika tverdogo tela, Y. 8, no. 11, 1966, 3390-3391
TOPIC TAGS: carrier scattering, current carrier, irradiation,.ionizing
irradiation,irradiation effect
ABSTRACT: An investigation van made of the effect of radiation defects
io the crystal structure of GaAs on the scattering character of the
charge carriers at different temperatures. Four pure specimens. In
which the mobility of charge carriers at temperatures from 100 to 300K
van due mainly to the scattering on optl-al lattice vibrations, vere
irradiated witb a gradually increasing flux of electrons vith an energy
of about I Mev at room temperature@ In pnre GaAs crystals at tempera-
turea higher than 300K, the mobility in due primarily to the acatterin
on polar optical-lattice vibrations,- At,tempera'v'urea lover than 100K
acattering on ionized impuritieg prevails, In the Imm'pmatu"'kanp from. 10010
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ACC NRi AP6036995
300K, both types of scattering take place, although with an increase in~
impurity concentration'the scattering on ionized impurities becomes
more substantial. In irradiated crystals the mobility was due to
scattering of charge carriers on simple point defects. The calculated
number of displaced atoms due to irradiation ccincided with the number
of scattering centers determined experimentally. Thin proves that
structure ilefects affecting the scattering character in GaAs cry-stals
irradiated with electrons are really Frenke;. defects. Orig. art. haot
2 figuresy
BUD CODE: 20/ SUBM DATE:. 20May66/ OTH REFs OOT/ ATD;',PRESSt 5107

SOU11% -.1 COLL
ACC NIPZ :-V~ o~
ALM'10R: Kurova, 11. A.; Vra--a, Y.; Vavil0v, V- S.
Mo5co,d State Un11vorsity im. V. univer-
.TITLE: Observation of the motion of electriczil domains in n-type genrani= with a
lpartially compciisated upper acceptor level of' gold
SOURCE: Fizika tvcrdogo tola, v. 8, no. 8, 196G, 2374-2381
TOPIC TAGS: electron capture, electron donor, temocrature dependence, electric field
ABSTRACT: The -mo-tion and velocity of a t;trong electrical field (domain) was observed
in samples oi gennanlum containing Au and lob in the range of -cemperatures between 15
land 350K. The clectrical inGtabilit-1 is dul:! to the dependence of electron capture in
Ithe wiper acccptor level of the gold (E 0.04 ev) on the magnitude of the electric
-:--_-n 'Lvr.:)erature and backgroun"' increase, the domain accelerazez. in the
ire-gion of generation of electrons in the s_-,.ple, velocity depends exponential-
1,1y on temperZzurc and tho activa-tion energy is ".04 ev. in the re-ion in which elec-
trons are 'r-a-eratcd primarily by the thenmal background from the gold acce-,tor level,
the ternperaturia deperdence of the velocity is exponential for all values of the back-
ground, ard the activation energy is IvO.016 ev, which is close to the temperature de-
1
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enOcnce o~ thc :~o~"`icicnz of electron c~p-.%;re on doubly negatve charged j~.-oid atoms
;at thcze At lowcr motior, -depend5 but -,n
Aemperazure, and z~-rees with the theoretical equation of B. K. Ridley (Phya. Le-t., 16''
; b .1 -~ltz -
105', 1965). T--, mnpere characteristic is iinear and there is no instab~'!;ty belcw*:
i15OX becau5r: conductivity in the samplez is governed primarily by the f'onization, of
shallow donor level, w"-:11ch filled by elcctrons at a re.,141t of Op-
itical rccha---~n-. It is s'ho-,m that inhomo-c.-,cities ir, the sawnple sstronc-*y affecz the
inature of motion. The domain "Ormz trc reZion of the largest stationary
ifield in z;L,~,ple and travels -zoward Cie field, dis;ippearing at the anode or in the
~rcc,ion of t,.-, wca"'~ field &.cad of the ancide. -the authors thank V. L. Donch-Bruyevich
':for dizcuzz:--*on:; znd V. V. Ostroborodova and S. 1. Danilova for preparing th-~2 cryz;zall
Isamples. art. ha3: 10 figures.
!GUB COD'Z: 20/ SUBM DAT`-r: 1GJan66/ OKIG RE-F: 006/ OTH RZ-*,:,: 008
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ACC N.";
ALj-;',iO:',: VC, v IV. S. ; Xoval Yu. .7;1. ; Koshe-lev, 0. G.
0 RG :H03CO%,' Etatc U;l1vc!r~;it7 i-M- X- V. Lunonc,:;ov (Xo3*-ovzkiy vosudarrtvan;-.:rj univer-
:sitet)
TITLE: Effect of i~].tziination on th'r_ electronic spin-lattice relaxation of phospho-
irous and A-centei-L _'n ---,!-,crn
iSOURCE: Fizika tvardogo teia, v. 8, no. 6, !~U'G, 2395-2400
iTOPIC TAGS: -pin lattice relaxation, LPR, photon, electron spin, impurity center
1ABSTRACT: Two imourity center-~, neutral o~osp'orous and ;acgatival -charzed A-centern,
i - .,I I LY
:ar-! invest igated at 1.9'JK by the EPR method. 7h(; crystals studied contain~_-d both cen-
Lers '.,;y light of the same spectrL:1 composition. The spin-latt-ce reayation
of both impurities was found to Increaze '-v a factor o.' 10 under -t.-he effect of t-e
,,7 -,.o ejcctjo-,j trarsitiozs i-n-zo t"ne cond-uctivity band. wer-e ma,
iligbt, owir.j de
I
!of the rate at .,,I~ich equilibritz. amiolitu(~es of t.-.e s-.)ectral 1_`nes are restored as de-
.pendent on the c-.-:,,_-r.,mental conditions; alter electron spin flip. The rates at which
;the elect-,ons a_-sa raicad to the conductivity ;:)a-,.d "- the -cao centers are determ,_,ned.
I -Y
1he photon a:~so=ption cross section, averaged for th,~ cnergic~; of 0.4 to 0.6 e7' .13
about 10 ti:z,~s -:,cater for phosphorous t"han for A-centers. The,methodology used
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,scribed and th-- re3ults obtained are clsc-,;-.~:cd in detail.
Itovkin foil Ir-radiated czmples WCd in thO ~CtLd . Orig
i y
'table, 3 foiuula3.
.SUB CODE: 2.)/ SUMV, DATE: 22Jan66/ OTH REF:
The autho;.-r. thank S. 1. Vin-
art. has: 4 Ifigumri, 1
007
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CC NR3 AP6037024- ~A)- SOURICE CODE: up/oi81/6-6/(./, i/ju/3449/34
AUT1.1OR; Vavilov) V. S.; Kosbelev, 0. G.; Koval', Yu. P. ; Klyava, Ya.
Or%G: Moscow State University im. M. V. Lononosov (Moskovskiy gosudarz-,,.,ernyy univer-
sitet)
TITLE: Investigation of the inter-impurity recombination between phor-)!norus and
boron in silicon
SOURCE: Fizika tverdogo tela, v. 8, no. 11, 1966, 3449-3450
TOPIC TAGS: silicon semiconductor, radiative recombination, epr spectr-L;m, temperature
dependence, impurity conductivity, activation energy
ABSTRACT: In view of lack of data on the temperature dependence of inter-imInirity
recombination, the authors used electron paramagnetic resonance to study this recom-
bination in silicon at temperatures 4.2K and below. The procedure u-sed was that de-
veloped by A. Honig and R. Enck (Proceedings of Symposium on Radiative Pecombination
in Semiconductors, Paris, july, 1964). The investigations were made on two sarmles
containing different phosphorus and boron concentrations. To disturb the equilibritma
in the distribution of the electron& between the boron and the phonpho.-I;r., the :;ample
was illuminated by a pulL;c of light From an int'rared monochromator. t1he Ell? spectra
were recorded at different intervals after turning off the light. The time dependence~
of the neutral phospnorus atoms was determined by measuring the amplitudes of the
lines. The results have shown that the equilibrium is not established exponentially,
Card 1/2

ACC NR- AP6037024
owing to the uneven distribution of the impurity atoms. '11he rate of in-'er-impurity,
recombination depends strongly on the impurity concentration and increaces with de-
creasing temperature. The time during which the excess concentration Of neutral
atoms of phosphorus decreases by a factor e is found to be T = Toexp(LE/kT), -.,ihere
,M = 5 x 10-4 ev and To = 8 sec (T = temperature, k = Boltzmann's const..7...nt). It is
noted that ISE is of the same order of magnitude as the activation enerj;y correspond-
ing to the temperature dependence of the impurity conductivity of copper atoms in
germanium and phosphorus and boron atoms in silicon. Consequently, measurement of
AE over a wide temperature interval and measurement of the activation elnergy in the
same samples would permit a more thorough study of inter-impurity recombination.
Orig. art. has: 2 figures.
SUB CODE: 20/ sm nATE: 18jun66/ ORIG REF: 003/ OTH REF: oo6

GRUSIVA, L.A.; VAVILOV, Y.T.
Moderation of neutrons in Iron - water mixtures. Atom.energ.
no.6:556-557 Je 160. q OMM 13:6)
(Neutrons)

KAMAYEV, A.V.; DUBOVSKIY, B.G.; VAVILOV,:V.V.; POFOV, G.A.;
PALAMARCHUK, Yu.D.; IVANOV, SJ.
(Experimental study of the effects of Interaction of two
subcritical reactors] Eksperimentallnoe izuchenie ef-
fektov vzaimodeistviia dvukh IDodkiiticheskikh reaktorov.
Moskvu, Glav. upr. po ispol'zovaniiu atomnoi onergii,
1960. 10 p. (MI RA 17: 1)

ALEKSANDROV, B.F., inzli.; BALYKQV, V.M., inzh.; BARANOVOKIY, F.I., inzh.;
BOGTJTSKIY, N.V., inzh.; BUIPEO. V.A., k-ind.tekhn.nauk, dotsent;
VAVILUI. V.V., inzh.; VOLOlLiOVSKIY. S.A., prof., doktor teldrm.nauk:
L.Ya., inzh.; GRIDIN, A.D., inzh.; LUMIN, L.N., inzh.;
KOVALEV, P.F., kand.tekhn.nauk!, K=CTSOV, B.A., kand.takhn.nauk,
dotsent; KUSNITSYN, G.I., inzh.; LATYSHEV, A.F., inzh.; LEYBOV,
R.M., doktor tekhn.nauk, prof.; LNYTZS, Z.M., inzh.; LISITSYN, A.A.,
inzh.; LOKHANIN, K.A., inzh.; LYUBIMOV, B.H.. inzh.; MASIla'VICH,
K.S., inzh.; MALKHASOYAN, H.V.; MILOS~MIH, H.M., inzh.; MITNIK,
V.B., kancl.takhn.nauk: MIKIIBYEV, Tu.A., lnzli.; PAILWONOV, V.I.,
inzh.; ROKANOVSKIY, Yu.G., inzh.; RUBINOVICH, Te.Ye., inzh.;
SAMOTLYUK, N.D., kand.tskhn.nauk; SK~XHOV, V.K., inzh.; SMOLDY-
REV, A.Ye., kand.tekhn.nauk; SHAGIN, V.T., inzh.; SNAGOVSKIY,
Ye.S., kand.tekhn.nauk; FEYGIN, L.M., inzh.; FRENKRL', B.B., inzh.;
FLWUN, A.A., inzh.; UORIN, V.H., dotuent, kaiid.tokhn.nauk; CHET-
VlWV, B.M., inzh.; CHIRWHIKHIN, S.I., lnzh.; SGI~OVNIKOV, V.N.,
inzh.; SHIRYAUX, B.M., inzh.; SHISHKIN, N.F., kand.tekhn.nauk;
SHPILIBERG, I.L., inzh.; SHORIN, V.G., doteent, kand.tekhn.nauk.;
SOOKMAN, I.G., doktor tekhn.nauk; SHIMIS, N.A., lnzh.; TERPIGGREV,
A.M., glavnyy red.; TOPGHIYEV, A.V., otv.rod.toma; LIVSHITS, I.I.,
zamestitell otv.red.; ABRMOV, V.I., red.; LADYGIN, A.M., red.;
MOROZOV, R.N., red.; 0752NOY, H.I., red.; SPIVAKOVSKIY, A.O.,
red.; FAMUSOVICH, I.L., red.; ARKIIANM~ISKIY, A.S., inzh., red.;
(Contimied on next card)

ALEKSANDROV, B.F.---(continued) Oqrd 2.
BELYAT37, V.S., inzh., red.; BUIaOOTA, L.I., inzh., red.; YLASOV,
V.M., inzh., red.; GLADILIN, L.Y.. prof., doktor tekhn.nank., nd.;
GREBTSOV, N.V.. inzh., red.; GRECHISHICIN, V.G., in2h., rod.; GON-
CHARKVICH, I.F., kand.tekhn.nauk, red.; GUDALOV, V.P., kand.teldm.
nauk, red.; IGNATOV, N.N., inzh., red.; LOKAKIN, S.M., doteent, kand.
tekhn.nauk, red.; KARTTNOV, M.V., dotnent, kand.tokhn.nauk, red.;
FOVOLOTSKIY, I.A., inzh., red.; SVETLICHHYY, P.L., inzh., red.;SALI-
TSKVICH, L.A., kand.tekhn.nauk, red.; SPERANTOV, A.V., kand.takhn.
nauk. red.; Sa-2LAR, G.A., inzh., red.; ABARBARCHUK, F.I., red.izd-va;
PROZOROVSKAYA, V.L.. tekhn.red.; KOH-DRATInTA, M.A., tekhn.red.
[Mining; an encyclopedic handbook] Gornoe delo; entaiklopedicheskii
spravochnik. Glav.red.A.M.Terpigorev. Chleny glov.redaktaii A.I.
Baranov i Jr. Moskva, Gqu.nauchno-tekhn.izd-vo lit-ry po gornomu delu.
V01.7- [Minit4- machinaryj Gornye maahiny. Redkol.toma A.V.Topchiev i
g
dr. 1959. 638 p. (Mining machinery) 0-IIRA 13:1)

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21,17,oo B006/Bo63 82312
AUTHORS: Geraseva, L. A. Vavilov, V. V.
TITLE: Neutron Moderatio.A. Iron - -V1.tr-Assemblies
PERIODICAL: Atomnaya energiya, 1960, Vol. 8, No. 6, PP. 556-557
TEXT: The investigations described in the present article were carried
out in a steel tank (74x74x1OO cm) containing water and CT-3 (St-3)
plates (71.5 x 71.5 x 0.3 cm). A bakelite coating protected the tank
and the plates against corrosion. The plates were arranged perpendicularly
to the direction in which the distribution of the moderation density was
measured, and were kept in this position by Duralumin and Plexiglas
holders which were fixed at the bottom and walls of the tank.
Measurements were made for three different specific volume concentrations
of the iron in the assembly: ? ~ 0.14, 0.26, and 0.43; ?- iron volume/
(iron volume plus water volume). The fission neutrons were obtained from
a converter that converted the thermal neutrons of the reactor into such
corresponding to the spectrum of U235 fission. It was made of uranoso-
Card 1/3 tl~

Neutron Moderation in Iron - Water Assemblies S/08 60/006/06",1'1-21
B006YB063 82312 / ' I '
uranic oxide enriched in U235 to 75%. The spatial distribution of the
moderated neutrons was measured by means of indium foils. Due to the
relatively small flux of thermal neutrons (and, accordingly, due to
th~! small flux of fast neutrons from the converter), the measurements
could be made only at a distanco of less than 56 cm from the source.
The results obtained are, however, extrapolated acccrding to the
well-known law that describes the drop of moderation density with
rising distance from the source: (ke-rh-Vr2, where X denotes the
relaxation length. The neutron age was calculated from the formula
.0 0*
Ic r4dr/ Ar2d and the following values were obtained:
~A r]
2 = 31.0�2.7 cm 2 for ~= 0.14;
'UH20 30.2�1-5 cm I VFe+H20
TFe+H20 = 39.7�2.0 cm2 for ? = 0.26;'~_F,+H20 = 50-412.5 CM2 forf = 0.43.
A general formula is given for the determination of the neutron age in
Card 2/3 11_~

Neutron Moderation in Iron - 'Na-Ler Assemblies 3/089/60/008,106/11//~~21
B006/BO63 82312
an assembly where the moderation length of each component is known. The
accompanying Fig. shows 'C as a function of ? (both experimental and
calculated values: TFe = 743 cm2, T1120 = 30.5 CM2). The agreement wits
found to be good. Finally, the authors thank B. G. Dubovskly and Yu. It.
Sergeyev for having sugL;ested tkiis work and for tlicir discussion, as
well as V. K. Labuzov, Yu. S. Ziryukin, 1.1. M. Kuziclikina and A. T.
Anfilat or their participation in the measurements. There are 1
figure and 2 references: 1 Soviet and 1 US.
SUBMITTED: January 7, 1960
Card 3/3

S/661/61/000/006/019/C,al
D205/D302
AUTHOas: Taraoova, A. S., Petrov, A. D., Anftanov, X. A.,_Go-
lu~_ , Pononarenko, V. A., Cherkayev, V. G. ,
Zadorozhnyy, N. A. and .Vavil~v-
TITI.S: Continuous addition of hydrochlorouilanou to unuatura-
ted compounds
SOURCE; Khimiya i prakticheskoye primenaniye kremnaorganiches-
kikh aoyedineniye; trudy konferentaii, no. 6, Doklady,
diakussii resheniye. II Vase. Konfer. po khinii i prakt.
prim. kremneorg. Soyed., Len. 1956. Leningrad, Izd-vo
AN. SSSR. 1961, 99-100
TEXT: ?or practical application of the addition reactions of me-
~i~l dichlorosilane, ethyl dichlorosilane and trichlorozilane to
liquid and gaseous unsaturated compounds an apparatus was designed
and optimum conditions of synthesis were established. The chloro-
silane and the gas are fad into a reactor. The products are dis-
charged via a cooler into a reoeiver equipped with a rallux. Dur-
Card 1/2

3/661/61/000/006/019/081
Continuous addition of ... D205/'0302
ing the reaction the reactor and cooler are cooled by water, the
receiver and the reflux by brine. The arrange.-aent was tested on
the reaction of ethylene with methyl. dichlorooilane and ethyl di-
chlorosilane. The exderiment3 have shown that in the 35 - 2000C
temperature range the reaction is unchanged giving a 65 - 75%
yield. No by-products are formed and the output is hip (,> 6 kg
of methyl ethyl dichl,iro3ilane/hr/l of reactor volume). The pro-
cess is amenable to automation owing to its insensitivity to tem-
perature changes. There are I figure and I table.
Card 2/2
V1,

DUBOVSKIY, B.G.; KAMAYEV, A.V.; VLADYKOV, G.M.; UZNLTSt)V, F.M.; NOZIK, V.Z.1
PALAMARCHUK, Yu.D.; POPOV, G.A.; VAVILOV, V.V.
Interaction in subcritical reactors. Atom. energ. 16 no.1:16-20 Ja
164. (MIRA 17:2)
1

IACC NR~ 416032,924 Monograph MI/
Dubovskiy, B, G.; Kamayev, A. V.; Kuvietoov, F. M,; Vladykov, G. M.; Gurin, V, 11~;
~furashov, A. P.; Markelov, I. P.; KOchergin, V. P.; Vaymugin, A. A.; Sviridenko,
V. Ya,; Dlycv, L,V.; Bogatyrev, V,K,;_Yayj1oys-_'/* V,; Frc%loy, V. Vo
Critical parameters of systems with fissionable n. - ;als and nuclear safety; a
handbook (Kritlchcokiye parametry oistem a del)n-dwhimisys, Yeahcheotvami I
yadernaya bezopasnost'; opravochnik) Moscow. Atomizdat. 1966. 225 p. biblio.
diagra., tables. 9000 copies printed.
TOPIC TAGG: nuclear oafetyp nuclear reactor, homogeneous nuclear reactcr,
heterogeneous nuclear reactor, chain reaction
FWOGE AND COVLTAGE: This handbook in intended for specialists concerned with
the problems of assuring nuclear safety as well an for persons r.-nlculating, de-
signing, operating, and studying the physics of nuclear reactors of various types,
as well an for students in associated departments. The book diacuGses methods of
creating and maintaining conditions which will exclude the ponribility of an
accidentally chain reaction during the processing, storage, and transportation of
fissionable materials. The book Is based mainly on the results of atudles pub-
liabed before 1965. In addition to information on critical parameters of systems
with fissionable waterIalss the authors considered it useful to include in the
handbook the fundamental concepts of criticality, principleefor assuring nuclear
safety, a review of asses of the occurrence of uncontrolled chain reactions,
C.rd 1/2 uDe: 621.o3g.5ig.4/621-039.58

ACC N& ta16052624
and the banic standards for nuclear safety. The authors express appreciation to
H. P. Rodionov, T. 1. Sukhoverkhova, X. A.0awilova, and L. V. Antookina for
their valuable assistance. There are 6h references, 30 of which are Soviet.
TADLF OF COIMWS (Abridged)
From the authors -- 3
Ch. I. Basic concepts of nuclear safety
Ch. II. Review of experimental date on critical parameters of system with
fissionable materials -- 14
Ch. III. Methods of calculating bomogenecus reactors -- 88
Ch. TV. Effect of neutron absorbers on the criticality of systems with
fissionable materials -- 3A2
Ch. V. Criticality of system of Interacting suberitical "embIles from
fissionab2A materials -- 169
Ch. VI. Uncontrolled chain reaction outbursts In systeas containing fisslonable
materials --202
Ch. VIX. Basic standards for assuring mclear safety -- 224
References -- 223
SM COM 18/ SM WS: 2WV"/ OR32 WWI 030/ OTH WWI 034

I
1, ,- Ir r. !.~ - f.- 11,
PARAKONOY, V.I,, inth.; KOLBASIN, G.M., inzh.; VAVILOV, V.V., inzh.
--
Unit of equiDoent with the M-qo su-=ortv. Hekh.trpd.rab. 11
no.8:17-21 Ag '57. (MIRA 10:11)
(Coal mines and mining-Mop'Loment nnd SUnDlieB)

PITROV, A.D.; ANDRIANOV. K.A.; GOLTJBTSOV, S.A.; POEOMARMM, V.A.;
MMKATW. V.G.; TARASOVA, A.S.; VAVr'OV, Y-V-; ZADORDZHNff. N.A.;
POPZMA, G*S.
Continuous method of cata3.ytie addition of hydrosilmeg to un-
satUrated compounds, Xhim-nauk I prom. 3 no.5:679-681 158.
1. Institut organicheskoy khimii im. V.D. Zelinskogo.
(Silane) (Unsaturated compounds)

VAVILOV Pacheslay ktg cn
yich- ORIDV, Anatoliy Aleksnndrovich;
v. red.; SFILYAR, S.Ya., tekhn. red.
MAKSIMOVA, V.V., tekhn. red.
tKM-9 And 101-9 co,l-mining units] Ugledobyvaiushchie kom-
plekay KV-9 t KM-9D. 14oakVA, GofjgortekhIzdnt, 1963. 111P.
(MIRA 16:9)
(Coal mining machinery)

L 332h5-65 W(-)/M7(c)/EPF(n)-2/FA(8)/En Fr-4/Pa-4/Pu-4 DK
ACCESSION NR: AP4012260 S/0089/64/016/001/0016/0020
AUTHOR: Dubovakiy, B. G.; Kamayev, A. V.; Vladv*kov, G. M.; Kuznetsoy,
F. M.; Nozik, V. Z.; Palamarchuk, Yu. D.; Ponoy. G. A-; Ninviloy- V- V
TITLE: Interaction of subcritical reactors
33
SOURCE: Atomnaya q*nergiya, v. 16, no. 1, 1964, 16-20 [6
TOPIC TAGS: subcritical reactor interaction, reactor safety estimation, fission-
~able material, equivalent reactor dimension , reactor dimension computation
ABSTRACT: The purpose- of the present work is to obtain a method for a reliable f
isafety estimation of interacting systems containing fissionable materials. This
estimation is used to provide a safety margin for producing, storing, and trans-
porting fissionable materials. The method of equivalent size has been developed
by the authors. This method, in essence, is based on the assumption that a set
of subcritical assemblies with specific nuclear properties and geometric para-
meters can be- replaced by a nuclear reactor with equivalent geometrical buckling'
card I /I g-

L 33245-65
ACCESSION NR: AP4012260
and the former nuclear characteristics. The device for-studying the interaction
of subcritical assembly in a three dimensional lattice Is shown in Fig. I(Enclosure).
The results of the computation are found to be in good agreement with experiment-
al results, having in all caties a safety margin. "The authors are grateful to
V. G. Zagrafov for valuable comments. " Orig. art. has: 6 figures and I table.
ASSOCIATION: None
SUBMITTED: 17Nov62 ENCL: 001
SUB CODE; NP NR REF SOV:OD2 OTHER: 00:&
carj 2/3