SCIENTIFIC ABSTRACT V.I. CHERNYAYEV - V.A. CHERNYAYKIN

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000308620013-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 12, 2000
• Sequence Number: 13
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

CHEMAYEV, V.I., inzh.
Vibration resistant electric motor for the VP-l
pile driver.
Trans. strol. 13 no.8:42-44 Ag 163. (MIRA 17:2)

1 4 ? 6' vwT + lin /,rn

_E t,, r i air SiCl sub
T I TI Plias e e!.,

SOURCE: Zh u rn a I ft7ichpskoy khimii, v.

0

T)r 7 A r~c t:
C t"17 r

p er a

ABSTRACT: The author,,; previous ly stud i e,~

tetrahalides and
the trihalides of P, r~,
lemer t c,

Chernvavev , V. V. Krapukhin , Yu, I . Sri-
1 v-nirr-,.
7 k h i

A natural extension -.1 that work was c,

and SiC'4-PCI5
systems during the separ ate ar, 1
:r. .7 aneou-9 pr esence or tine orla

components. These studies were stimulated by the
fact that boron and
phosphorus

Fj
are the Mast harMfUl impurities ip semiconductor
Si, which -s produced from
SiC14-

i Card 1/2

USSR/Chemistry Transportation of chemicals FD-2644
Card 1/1 Pub. 50-9/18
Author Chernyayev, V. N.*
Title Concerning the transportation of powdered chemicals
Periodical Khi . prom. No 3, 157-156, Apr-May 1955
Abstract Comments on an article by P. F. Derevitskiy (Khim.
prom. No 7,
429, 1954) that deals with the transportation of powdered chemi-
cals.
Institution Division of New Technical Methods, Technical
Administration of
the Ministry of Transportation USSR (*Chief Technical Expert of)

CHEIWffW, V.N.; FUSTILINK, A.I.
Phase equilibrium in solutions of silicon
tetraiodide and
antimomV trilodide. I2v.vya.ucheb.zaV.; tovet.met.
2 no.6:
147-153 '59. (MRA 13:4)
1. Krasnoyargkiy institut tavatnykb Metallov,
problepwya
laborator.Lya chistykh wetanov, metallichaskikh
soyedineniy
i poluprovodnikDvykh materialov.
(Vapor-liquid equilibrium) (Antimorq iodide)
(Silicon iodide)

s/i 4q/6o/ooc)/w6/o,_,2/c 18
AOO6,/AOOl
AUTHORS.- Krapukhin, V. V., _Chernvavev. V_ N
TIPME. On Deep Purifioatlion of Siiicon Tetrachloride From
Metal TMp,..~rjties
IV the Fration,~,ticn Method
PEEKTODICAL. -7ZVeStiya vysshih uchebnykh zavedeniy, Tsvetraya
metallurgiya, 1960,
No. 6, pp. 124-131
Among the methods of purifying me_t_als L-d salts,
diz_,~dilaticn and
fractionation processes came into extended -use. Fractionation
is based on the
value of the coefficient of separation (0~.) at a given
pressure and temperature,
Data on the -rapor-liquid equilibrium, whj2h is one of the
basic. scient.-ific. --rends
in this field, are available only for medii.;.m concentrations
of one component in the
othier and not for very low consenTraticns, Therefore the
fral-tionation process of
deep purification fcr a sc*.,~;entratlon r&nge of 1,10-2 to
I.IC-7% has an empl-r'-cal
nature, and prsvicvs at.-.t~-mp4l-s of cAlaulatirg the
procf-ss wc-re tased or. Ia-ws which
are Justified for id=_al ~cll ut ions, The authors studied
condI14-onz of deep separa-
Ifton of lmpt~ri-_Ies from the basic -omponent, and the tirst-
place at-~empted to
reveal th-:: value of the actual coeffic-I-Ent of separat!on
lo~ ) an -~ne zore adjacent
S
to a pure ccmponent, using tie equation;
L. I- -
Card 1/151

s11l 4 9/6o/boo/do6/b., Vol A
A OC-6/A,'-)O 1
On Deep Puri-fication of Silicon Tei-ra2hloride From Metal
lmp,~rities by the
Fractionation Method
P
0 0 s r2 ~2
where P1 and are-the pressures of saturated vapors of pure
components at. a
given tempera' re of the mixture; the indices 1 and 2 are
always pertaining to
the basi.-, component and the admixture, respectively; -(l and
T2 are the coeffi-
oients of activity of the componer
its in the solution which vary with changes L-i
the composition of the solution. A combined analysis is made
of the Gibbs-Duhem
equation and the relative volatility, and it Is assumed that
impuritles might. exist,
for which the coefficient of separation varies with the
transition from their
medlirn concentration in the basic component to a range of a
very low content, A
more precise definition of the 04S value is made by 2 series
of tests. The first
series is made on an Aldershaw (01'dershou.) typc- column of
490 mm height and 32 mm
in diameter with 15 baffles with up to 42 apertures of 0.8 -
0.9 mm in diameter.
The second series Is performed on a quartz column with
perforated plates and 10
Um~,ffles Fig. 2). This device can operate at higher
temperat-,:res and is less
~ ard 2/5

S1 I 49/60/C"'OV~C 5/~) 20E)*
Aoo6/Aooi
-In Deenz Purification of "Illicon Tetrachloride From Metal
Impurities by the
`,;~c'.iunation Methou
1?y corrosior. spraying rate is specially regulated to remain
co=,tt-alt.
-on was m~,. .1% and the SiC14 - FeC systems. An
' 11 tllf--' SiC14 - PC13 13
of initi,
a-1 nixture at a given concentration was placed in a vat.
attained t*.- .-onditions, the column was brought to a stationary
.,.-ff,'n 2 hou--s. Then at a very low rate the first samples of
the distillate
1L1,om t1---- vat every 2 - 2 1/2 hours. Simultaneously samples
were taken
fro~~i the vat- in in amount of 1.5 - 2% of the liquid volume in
the vat. Then the
spr,-:iLng, raLes of the u per and lower sections og-the
apparatus were measured. Th
p
comuo,-.ition of the distillate and of the liquid In the vat were
used to calculate
ti:can value of ~.s vat e/
for a concentration range of X
and Xdist according to the
n On
10 ~!;x Vat 1 gx elist
th
re the comporitions of the distillate wand the liquid in t e
nlx:iber of the theoretIcal plates in the apparatus. The chemical-
loy T. P. 111iseleva under th,.-~ supervision of B. 14. Lipshits.
The

S/149/60/000/006/012/018
AOO6/AOO1
On Deep Purification of Silicon 'Tetrachloride From Metal
Impurities by the
Fraction,tln- :.:cthod
~x!---i.ment:3 performed in the low concentration range of the
second component show,
t
L.! U he coefficient of separation in the case of the SiClh - PC1
system is
cr---istant, ond variable in the case of the S'C'4 - FeCl Item. L
the concentra-
3 sys
other impurities do not considerably affect the
on. range of PC13 in S'C'4,
--:--ing-es in the coefficient of depa-r-ation determined for a
binary mixture. The
is confirmed that the prevalent role in the behavior of
impurities --n
,urification is exert the basic
ed by the Interaction of the impurities with
:,=ponent. In this connection the study of binary systems at a
low concentration
one of the components, acquires a special significance when
solving the problem
o" dec-7) purification of a substance. Figure 2:
-;'ure 2.
I.ractionat-ion column with perfo- -cc -
-,al.--d baffles (a) and phlegm
motero (b) ; 1 - fungiform part;
2) chlorvinyl hose with clamp;
3 &ockct for measuring the
4 - section. M
Card 4/5

s/14q/6o/ooo/oo6/0i2/018
A006/AO01
On-Deep Purification of Silicon Tetrachloride From Metal
Impurities by the
Fractionation Method
There are 4 figures, 2 tables and 11 references: 8 Soviet
and 3 English.
ASSOCIATION:
Krasnoyarskiy institut tBvetnvkh metallov,(Krasnoyarsk
Institute of
Non-Ferrous Metals) Problemnaya laboratoriya chistykh
metallov,
metallicheskikh soyedinenly i poluprovodnikovykh materialov
(Pilot
Laboratory of Pure Metals, Metallic Compounds and
Semiconductor
Materials)
SUIMTTED: July 20, 1959
Card 5/5

S/078/60/005/007/035/043/ya
B004/Bo6o
AUTHORS: Nisell son, L.' A.,
TITLE: SiI BI_ and SiI Al I S --tems
4. 3 4 2 6
PERIODICAL: Zhurnal ne'organicheskoy khimii, 1960, Vol- 5, 1,70- 7,
PP. 1564-1566-
TEXT:- In view of the fact that volatile iodides are used to produce
high-
~.Purit!y elements, the authors examined the phase equilibria in the
SiI -BiI 4nd SiI - Al I systems. The phase equilibrium between
~4 3 4 2 6
.crystals and liquid was determined by a method described in Ref. 1,
and
the boiiing point according to Ref. 2 at 760 torr. Result's are
given in
Tables 1,2 and in Pigs; 1,2.
Card 1/4,

BI and SiI Al I Systems
S44 3 4 2 6
Jots
Fig. 1
zSo Ilk
eso, za M a B.'s
Card
S/078/6P/005/007/035/043/XX
B004/Bo6o
Fig.2
x
wtj
az
ills
MO -
'v 5p,

SH - BI and SH 4 -Al 216 syetemij S/076/60/005/007/035/043/XX
4 3 B004/BO60
Eutectics appear in both systems. A linear dependence was
found between
the logarithm of the molar SiI 4 fraction and the reciprocal
value of
absolute temperature. The thermal effects calculated from the
tangent of
this straight line lie near the melting heats of SiI 4 and Al
216' The
systems9 therefore, follow the Schr6der equation. The Raoult
law holds for
both systems. Thiswas confirmed by measuring the pressure of
saturated
vapor of pure SiI 4' Table 3 gives the boiling points of A!
216 between
148 and 654-5 torr, and of SiI 4 between 105.5 and 860.0 torr,
determined
by means of a Sventoslavskiy ebulliometer. The authors point
to the pos-
sibility of calculating the phase equilibrium between liquid
and vapor
from the data relative to the phase equilibrium crystal -
liquidg and
vice versa, on the basis of the activity coefficie-its,
provided the system
does not deviate too much from an ideal one. TherE are 2
figures, 3 tables,
and 2 references: 1 Soviet, I US, and 1 German.
SUBMITTED.- March 12, 1959
Card 3/4

SiI 4 -BI3 and Sil 4 -Al 216 Systems S/078/60/005/007/035/043/XX
B004/BO60
Legend to Fig. 1: Phase equilibria in the S'14 - Bi13 system
Legend to Fig. 2: Phase equilibria in the SiI 4 - Al21 6 system
1.
To both Figs.s 1 points determined experimentally
2~ calculated by Raoult's equation
Card 4/4

s/136/61/000/008/003/005
E021/E180
AUTHORS: Chernyayev, V.N., Krapukhin, V.V., and Martynov, Yu.M.
TITLE: The purification of silicon tetrachloride by
redistillation
PERIODICAL: Tsvetnyye metally, 1961, No.8, PP- 56-59
TEXT: In the production of silicon, the purification of
halide compounds is very important. An investigation has been
carried out into the fractional distillation of silicon
tetrachloride, with a view to removing other chloride compounds.
The coefficients of separation (ratio of the components in the
distillate) of halide compounds of silicon and of potential
impurities were calculated and experimentally determined, and
are
given in Table 1. Redistillation experiments were carried out
using glass columns containing a varying number of plates (15,
25
and 40) with different efficiencies (11.5, 20 and 31); the
efiiciencies were determined by separating standard mixtures of
benzene and carbon tetrachloride. The results are given in
Table 2.
They show that this method can be used for removing non-polar
and
slightly polar compounds but not highly polar impurities (Fe, Al
and Ca).
Card l/ 6

The purification of silicon .0-4 S/136/61/000/008/003/005
E021/EI80
There are 2 tables and 10 references: 8 Soviet and 2 English.
The English language references read as follows:
Ref.l: G. Martin. J. Chem. Soc., 1914, 105, 2836.
Ref-5: J.H. Hildebrand, R.L. Scott. The Solubility of
Nonelectrolytes. N.-J., 1950.
Card 2/6

MRACHI M.N.; KRARIKHIN, V.V.1 KULIKOV, F.S.; CHERNYAYEV,
V.N.; NEKHAMKIN, L.G.
Certain regularities in the extraction of germanium
chloride. Zhu.
prikl.khim. 3t nolOt2l88-2191+ 0 161. (14IRA 14:11)
(GermaniUri chloride) (Extraction (Chemistry))

CHERNYAYEV, V.N.
Adsorption purification of silicon tetrac.Uoride.
Zhur.prikl.
khim. 35 no*7tl431-1415 J1 162. (KIRA 15:8)
(Silicon chloride) (Adsorption)

CHERNrAYEV, V.N.; KUPUKHIN, V.V.; CHERNUKRA, G.D.
Extraction purification of silicon tetrachloride.
Zhur.prikl.
khim. 35 no.10:2161-2165 0 162. (MIRA .15:12)
(Silicon chloride) (Extraction (Chemistry))

S/076/62/036/007/006/010
B101/B138
,',U-L40'tZS-. Chernyayev, V. N., Krapukhin, V. V., and
Stolyarov, Yu. I.
TITLE: Phase equilibria in the system SiCl 4 - SbCl5at low
antimony
trichloride concentrations
P~;RIODICAL, Zhurnal fizicheskoy khimii, v. 36, no. 7, 1962,
1521 - 1524
TEXT: The behavior of SbCl 3 was studied as impurity in SiCl
4* The
solubility of SbCl 3 (at concentrations of 0.24 - 1.87
mole%,,) in SiCl4 Was
0
deter.mined at 0 - 118 0, and the phase equilibrium according
to V. A.
Kireyev, Yu. N. Shleynker, Ye. M. Peresleni (Zh. fiz. khimii,
352, 1952).
High-purity substances were used. BiGl contained the
following impuri-
L, 'a 'An and cu