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SCIENTIFIC ABSTRACT V. M. FRIDKIN - Z.I. FRIDKIS

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CIA-RDP86-00513R000513710015-8
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December 31, 1967
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SCIENTIFIC ABSTRACT
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2h4l7 S/051/61/on/ooi/oo4/006 On the light emission ... E036/E435 that charged layer effects are seen in Tal and TaBr. Microscopic examination of these effects shows them to be a surface phenomena located near the electrodes, a strong electric field being created in this region. According to H.Kallman (Ref.5: Phys.Rev., 97, 1596, 1955) ultraviolet irradiation during the application of the polarizing field forms a comparatively stable photoelectret, for relatively low polarizing field intensities, when little homogeneous charge was created. It is found under the conditions of the present work that if the ultraviolet irradiation occurs at the same time as the polarizing field is applied,or after its removal, the luminescence during the application of the reverse field is markedly reduced. If the ultraviolet exposure were sufficiently small ( 4lo-5 watt sec/cm2) on applying a field an in~.rease in luminescence occurred, independent of the direction of the field, the Gudden-Pohl effect. For larger exposures, the sharp decrease mentioned above is observed. By illuminating the condenser with ultraviolet light through a negative and subsequently applying the reversed field, an image of the negative is obtained. To explain the main features of this paper the author proposed a tunnelling mechanism in which the conduction band Card 4/6 24417 S/051/61/oll/ool/004/oo6 On the light emission E036/E435 is tilted during the application of the polarizing field. By this means an electron can be transferred from one aqtivator level to the other by tunne~lin& into the band and hence to the other level. The internal field in the polarized layer due to non-uniformly distributed charge is such as to retain the electron in the second level indefinitely. The application of the reverse bias tilts the band and the electron tunnels from the second level to the conduction band and then recombines with the hole in the first level emitting radiation. This-theory is presented in qualitative terms only but could explain all the data reported'. For instance the ultraviolet irradiation causes a double charged layer to form, which partially excites the second type of traps before the reverse field is applied thus reducing the signal. It is expected that all materials showing the effect should exhibit electroluminescence although the converse is not true. I.N.Orlov is thanked for the specimens and for discussion of the results and also I.S.Zheludev for continued interest in the work. There are 5 figures, 2 tables and 7 references: 4 Soviet-blbc and 3 non-Soviet-bloc. The two references to English language publications road as follows: H.Kallman, B.Rosenberg. Phys.Rev., 97, 1596. 1955; Card 5/,16~_ FRIDKIN V M , kand.fiz.-mat.nauk Physical principles of the electrophotographic process. Vest. AR SSSR 31 no.3:111-113 Mr 161. (MIRA 14:3) (Xerography) FRIDKIII, V.M. Symposium on the physical bases of the electrophotographic process. Usp. fiz. nauk 74 no-3:567-570 J1 161. (MIRA 14:7) (Xerography) S/020/61/138/004/006/023 B104/B203 AUTHORs Adirovich, E. I.j and Pridkin, V.M. TITLE: The law of interchangeability and the quastateadinesi of electronic processes in photoelectreta PERIODICALt Akademiya nauk SSSR. Doklady, v. 138, no. 4P 1961y 820-823 1 TEXT: In the introduction, the authors otate that the law of inter- changeability in electrophotography has been studied in a great number of papers without solving the theoretical problems of the conditions of its realization in photoelectrets. The inequalities n 41P411 Dn/3t IDP/Zt - ~Nl 'at I (04,xkl) (2) were obtained as necessary con- ditions. n is the concentration of conduction electrons, N that of the electrons on the adhesiori levels, P that of the holes on the activator lavels, 14 that of the activator oenterst and M 2 the concentration of the adhesion centors. 1 is the crystal thickness in the x-direction in which the field is a pliedpK the dielectric constant, E the binding P i energy of the electrons'on the local levels of the i-th type. The Card 1/6 24048 S/020J61/138/004/008/023 The law of interchangeability .... B104/B203 necessary and sufficient conditions were only defined for the case of long exposure times, weakly excited donors, and weakly filled-up accep- tors; n(x,t)% N(x,t) (O'kx< 1) (3). The relations (2) and (3) are different forms of conditions for the quasisteadiness of the concentra- tion of mobile charge carriers. The present paper generally studies the necessary and sufficient conditions for the realization of interchangeabi- lity in photoelectrets, and the relationship between the interchangeabi- lity and the quasisteadiness of the kinetics of electron processes. the author studies a crystal for which the energy spectrum and the scheme of electron processes are shown in Fig. 1. The kinetics of the electron processes in the exposure of the crystal in an external field E, is described by the system I. ap + a = 0; a1v k2N + Pn (M3- N); Y, PV Ft OE 4A ap P, ri k, (MI - P)- - OMP; an I ql&n E + qD a7X TP (4) Card 2/6.. '1404 S A1/138/004/008/023 The law of interchangeability .... B104/B203 where ki a k I (T9I)v k2 w k2 (TtI), and I is thi light intensity. The authors formulate the boundaty and initial conditions,'and subsequent- ly represent, without limitation of the generality, the functions n and j and the transition probabilities k 1 and k2 in the form n - In9 Ii ; k S I; ks a a I. Here, n and j are new unknown functions 9 1 2 9 9 of x and z, and also, possibly of the parameter 1. 81 and a2 depend, in the general case, on I and T. Thus, the system LP + IV I = 0; L = - s,N + On. (M2 - N); az 1i-C Oz (8) OE 4x ap j7 P'. S, (M, P) - Omgp; (8) all P qjLngE + qD -4 = 1g; p = P - N - Ing. q Card 3/6 2 40L,-3 S/020/61/138/004/008/023 The law of interchangeability .... B104/B203 is obtained for (4). On the premise that (a) for all types oVlocal levels the rate of thermal production of frie charge carriers is negligibly small as com ared to the rate of optical production. (s, - const; a - const and that (b)-the terms with In ay be neglected in ?8), the condition for the realization of6innlterchangeabi- lity is satisfied t Q, ~~dx-wqS [P(x,z) - N(x,z)) dx - Q(z) (9). The first of the above conditions reads exactly: 2:tn:kT V 1>2 1>2 se. s, h2 -h, Card 4/6 241048 3/020/61/138/004/006/023 The law of interchangeability ... 131041B20'A In a thorough investigation kohe authors derive the inequalities I'CPM 21'1' "A'2/'2' I"(P*D 2A nq 4,i1Mj (!5), and prove that (11) and (15) are the necessary and sufficient conditions for the realization of interchangeability in the polarization of a photoelectret. Similarly, it can be shown that these conditions also hold for the realization of interchangeability in the depolarization of a photoelec-.ret. Another ezuivalent remsentation of these conditions readaj n x,t)4_N(x9t j!Dn(x,t)/Dt-x.,~N(x2t)/9- (0,P1 M1 for a nonquasistationary case and contradicts the life- time of photoelectrets and that of dark decays of the charge of an electr~- photographic layer experimentally observed. KT is the thermal component '25 of'the/ejection probability of an electron from local or activator levels~ Card 1 2 C) :11 C S/020/62/143/004/012/027 The isoopacity in ... B104/BI02 into the conduction band; ~j is the adhesion probability; M1 Is the ad- T hesion-level density. If in the crystal deep adhesion levels only (K "d exist, the excitation of the crystal may be nonquasistationary. In this case, from the above equation an isoopacity equation may be de2ived which corresponds to experimental data. The depolarization of a crystal is discussed in detail. There are 2 figures. ASSOCIATION: Institut kristallografii Akademii nauk SSSR (Institute of Crystallography of the Academy of Sciences USSR) PRESENTEDt December 11, 1961, by A. V. Shubnikov, Academician SUBMITTEDs November 1 1961 Card.2/2 FRIDKIN, V.M.; BARULIN, Yu.N. Two mechanism of the formation of latent electrophotographic images. Dokl.AN SSSR 145 no.1:78-81 Jl 162. (MMA 150) 1. Institut kristallografii AN SSSR. Predstavleno akademikom A.V.Shubn!Lkovym. (Photoelectricity) FRIDKIN, V. it., ZHELUEEV, I. S., ABDULGAMOW, I. S., "Thsting of photoelectret conditions in activating alkali halogen crystals." report to be submitted for the 1st Intl. Congress on Reprography, Cologne, west Germany, 14-19 oct 1963 -.1. also submitted: * . . .with BUORTYMM; V. 1., 10 Electrophotogranhy on silver chloride crystals.0 * . . .with ANFILOV, I. V., "The present state of development in the electro- photographic field." q)/S4r (m)/EWP(B)/MS A~M/ASD- JD ___;!JAN~_6 Lie ( 7 ACCES$jON.Nili U30022h8 s/29hi/63/ool/ooo/o353/6359 AUTITOkS: Fridkin,-V. Nozov, V. NO' TIT LE~ The role of barrier contact in radiation mechanism of Zns-fiIM3 SOURC;: Optika i opoktroskopiyaj abornik statoy. v. ls Lyumineateentaiya. Mo3co~, Izd-vo AN SSSR, 1963p 353-359 TOPICZAGS: kinetics, ion,, negative charges,oorona discharge, quenching ',ABSTRACT: T~e kinetics of radiation in a negatively charged film of ZnS-Cu,.Cl was investigated, first under the action *of direct electrical impulses of variable duration and then under an opposing field of linearly increasing potential. The negative ionic chargo on the film was produc ed by corona discharge in air. Fur- thermore, to study the relation between qu*enching and electron redistributions in energy levels, the film was charged and pre-irradiated by tte above time-dependent opposing electric field with linearly increasinga potential. Curves were obtained for radiation intensity as a function of time with different, positively charged, variable impulses and linearly increasing potential as parameters. The results are interpreted by means of a concept whereby the adsorbed ions on tte. film'surfac form a space charge. The presence of this space charge then forms ajurfaee Card 1/2 L 19472-63 .... ... - - ACCESSION IM: AT30022h8 ;barricr. This'is' connected to ions in ionization levels by neans of electrons tunneling thr'oueh the sur.face barrier (first transition) and to radiation cente'ri! (third transition). "Thd-iut~~r'is gratoful.to I. N. Or1M F. F. Vollkonshteyn' A. M. Bonch-Dr ~evich'.. Orii. art. has: 8 ffFwes. ASSOCIATION: none SUBMITTEDs 20jan62 00 DATE ACQ: 19MaY63 ENCL: SUB CCDE: PH NO REF SOV; 007 OTHER: 003 VP AUTHOR: TITLE: S/18 63/005/001/057/064 B104XB186 Fridkin, V. M. Peculia 'rities of longitudinal photoconductivity of crystals with strong absorption PERIODICAL: Fizikh t.verdoFo tela, v. 5, no. 1, 1963, 553--556 TZXT: On the basis of.studies by K. Hecht (Zeitschr. f. Phy*s., 77, 235, 1932), F. Stdckmann (Zeitschr. f. Phys , 128, 185, 1950), B. Gudden and R. Pohl (Zeitschr. f. Phjs., 16, 170, ;923), more general expressions for the dependence of the primary photocurrent on the field strength are studied: q WWnq W 11 e- dx 0 d OW qwno + -e--7- W d W Card 1/3 S/181/63/UO5/001/'057/064 Peculiarities of' longitudinal... B104/B186 e w dx 0 d (2). qwna ae e& W ( We d W- a 1 .01 IvrE is the carrier shift in the band, n0 is the concentration of free carriers, and q is the elementary charge. These expressions snow that in the general case i+ > i-, i.e., the photocurrent is unipolar. For weak liCht absorption (d/a cm% (IA= mobility and 'To life- time of a hole),, The maximum charge of the photoelectret, obta4ned b i tegrating..,: -0 With the discharge current with respect to time, proved to be - 10 cottl increase in polarizing fieldp the charge density of the photoeleotret increased, "The authors express their sincere thanks to Academician A. V. Shubnikov for proposing this topic and for discussing the results of the works" Origs arts bast 6 figures. ASSOCIATION: Institut kristallografii AN SSSR (Institute of Crystallography AN SSSR) SUBMITTED: O9Apr63 DATE ACQs l9F*b64 ENCLs 00* SUB CODEs PH NO REF SOVt 006 OTMI WS Card 2/2 ACCESSION NR: AP4043192 S/0070/64/009/004/0564/0565 AUTHORS: Abdulgamidov, S. A.; Zheludev, I. S.; Fridkin, V. M. TITLE: On the kinetics of the formation of the photelectret state in additively colored KC1 single crystals SOURCE: Kristallografiya, v. 9, no. 4, 1964, 564-565 TOPIC TAGS: potassium compound, photoelectret, single crystal, color center, F center, polarization, depolarization ABSTRACT: The tests were made with single crystals having an F- 16 -3 center concentration -10 cm with an aim at checking on the theoretical deductions of E. Adirovich (Fiz. tv. tela v. 3, no. 7, 2048, 2050, 1961). The measurements were made with plates having area -1--2 cm2 and thickness -0.15 cm, using barrier contacts to prevent the injection of the carriers from the electrodes into the Cardl/4 ACCESSION NR: AP4043192 crystal (mica liners). Illumination during the polarization was with monochromatic 546-nm light. The charge was measured by the depolarization method, with the photoelectret illuminated with the undecomposed light from a mercury lamp and with integration of the depolarization current. The time variation of the photoelec- tret charge was found to be exponential. The reciprocity law was fulfilled over the entire range of light intensity employed. The charge density was found to be linear in the polarizing-field in- tensity. It is concluded on the basis of these results, and also results by others, that the kinetics of formation of the photo- electret state in colored alkali-halide crystals, as well as their depolarization, are in accord with the deductions of the phenomeno- logical theory. "The authors thank L. M. Shamovskiy for supplying the samples of additively colored single crystals." Orig. art. has: 1 figure. ASSOCIATION: Institut kristallografii AN SSSR (Institute of Card 2/4 , ACCESSION NR; AP4043192 Crystallography, AN SSSR) SUBMITTED: OlNov63 ENCL; 01 SUB CODE: OP, SS NR REF SOV: 002 OTHER: 004 A Card 3/4 ACCESSION NRs AP4043192 min Card 4/4 ENCIXGUREs 01 Dependenoe of the charge of a photoelectret on the illumination, following illumination by different light intensities (additively colcred single crystal KC1, T = 120K). The numbere refer to different illuminations. ABDULGAIMOV, S.A.; ZIIEIIJDEV, I.S.; FRIDKIN, V.M. Kinetics of the formation of the photoolectret state in additively colored KC1 single crystals. KristallografiJa 9 no.4:564-565 JI-Ag 164. (MFIA 17: 11) 1. Institut kristallografli AN SSSR. M;-nt. ar. I r~m in d#3 y-i rv orr u ,r, re a Ir. ph-D Io 164, Fiz. Lver. tels 6 rv).10;:'4~`T 31'~5 i ~ Ir s t k T-.. f~ lw17 ;g ro 'U I ~A , KISLLEV) V.P.; 110SPELOV, V.V.; F~RIDKUII, V Spectral curVOS of the d-polarization of silver chloride cryawls. Zhur. nauch. i prikl. f0t. i kin. 9 no.5:357-359 13-0 164. ('411d, 17: 10) 1. Institut kristallografii Ali SSSR i Fizicheskiy faku-11tet Moskovskogo gosudarstvennogo universiteta imeni Lomonosova. L 41341-6f) -71~~--If/PU-4 IJP(C) JD/V,;I/JG Pf :4 ACCESSION MR: AP3000741 S/0020/~3/150/003/0511/0514 MUM: Sugriyenko, V. I.; Fridkin, V. 14 TITLE: Electrophotorpraphic isoopaque of ACG1 uingle crystad SOURCE: PH SSSR- Dokladyt 1501 no.3# 511-514 TOPIC TAGS: electiophotographic i-soopaque- electrostatic photography, ail chlorid iscopaque I ABSTRACT: The form of the depolarization isoopaque for ArCl sin,1:1e crystals j with difrerent concentrations of callo5dal silver has been st.i,ya+ 'ed'. Plastically deform d crystals were used in the form. o~_ZQ511- 0.25 rum thick heat treated at 4000 for 6 hr. The concentration of colloidal sUver was f regulated by exposures to white liaht from a SVD'3h-250 lamp, after which absorption curves at room temperature-were plottrd. The photoelectrat cardition was created by photopolarization at the temperature of liquid nitrogen in a field of 3 kv/= with monochromatic 11(~ht of 365--atllimicron uavelenath. The polarization vas carried out by exposures to grean ligeNt of various intensitie3. In confirmation of results obtained earlier by 'eyklya-- (P. V. Meyklyarp DAN, 31j 226 (1941), it was found that exposure Card L 41Z41-65 ACCESS1011 MR: M000741 increases cause increases of' both the concentration and the size of silver particles. The Increase in particle size is characterized by deviation from the matual substitution laug the particle diarrmter at a lViven energy growing smaller wit th higher lif~ht intensities. The results, in geteral, confirm an earlier suTgestion by Fridkin (V, ff. Fridkin, DP11, 143, 825 (19A:!) concerninj the machanisim or the breakdown of muti;aj substitution in the formation of latent electrophotoiraphic imajes within the bilh 11~ht-intena:.%,r ranc~e and explain the same phenomenon in experiments by Vayklyu. The thao-y of Mott and Gurney, therefore# remains valid without any 5pecial qualificatLons. Alsop the analogy between latent photoayaphic and latent electrophotoc~raphi: ima-es in silver halid compounds appears to P,,o deeper than was [Weviously assinned. The paper was presented by Academician A. V. Shubnikov on 29 December 19A2. "The authors thank L. P. Mellnichuk for ausistance in the formula measurements." Orig. art. has: 1 table arA 3 figures. PSSOCTATION-. - Odegakiy gaadarstvanW universitat im. r. T. Rachnikova (Odessa State Uriiversi~y); Inatitut kristallografti Akadcmii nauk SSSR (Imtjj_vte cr Grystallographyj_Aq~4~ ~Scien~ceq._SSSR) 4 .1 SUBMTED: 25Dec62 ENCL-. 00 SUB CODE:-. NO REF SOV: 008 OTHER; 004 ATD MESS: 202jj Card 2/2 L~58927-65 EWT MAW (N)/T/WP M /EEG (b)-2/EWP W/E11A (c) PI-4 -IJP(c) J111GG ACCESSION NR: AP5011525 UP,/0020/65/l61/005/!060/l0b62 AUTHORS: Gulyamov, K.; jqakhovitskaya, V. A.; Tikhomirova, N.A.; Fridkin, V. M. - ------------------ TITLE: Anomalously large effect of pressure on the optical and6' Jerroelectric properties of SbSI single qrygka_2s Vf 0 SOURCE: AN SSSR. Doklady, v. 161, no 5, 196 k1060-1062 51 q TOPIC TAGS: antimoni compound., single crystal, ferroelectric proper-~~, uy, pre a surie-_ dependence, Curie poin ) electric field dependence -----I--ABSTRAOT:-~--EarXier-ii.vestiga-tio: 7,o!7_theoptica.land Cerroelectric th- no us mn properties of SbS1 Single crystalal and have lead to that the coefficient dE./dp (E width of forbidden band, p pressure) lias tin anomalously large value. To check on this assump- tion, the authoro have undertaken-to determine de /dp directly ty ;7': measureing the shift of the edge of intrinsic abs6rption under the influence of hydrostatic rea-sura. The-results, which are MUStra p ted in Fig. 1 of the Ene-losure, show that single crystals SbSI have Card 113 T 1)/EWT(=)/T/E;,WP(b)/ VMP(t) J-D/JG T/ JJUGESSION UR: AP008663 AUTHORSt Pospelov,V V* Frl~d~r, T. K. TITLEt The probl6m, of the mechanism of forming tfte2hq~oale~ltrtconditioa in monocrystals of certain halides of figvei~ wA of alkaline wbtls SOME z - Zhurna. n=bnV i. prikladmor 20 ro, grefii i kinewtograflis v# 20, co* 2# 1965j, 3.18-123 TOPIC TAGSt__ Studies of the ion- adsorption mohmism. and of - the formation of - - heuero- and lwmopotentialz ia arptals of silver ba3ldes and Islides cC alkaline als are presented.- Experiments were berfomed with sodium ard potassiun chlorldi C.-,7stals of dinws;Lona 10 x 10 x I ma and with silver calorld-a plates 15 x 15 x 0.5 mm in 'size. The expertwatal methods used were those do.-cribed by P., 9, Tartakovskiy (Vautrannly gotoeff" v. dielektri~hs Crostekhteorlzdatt H,,_ 1960); by V*_ X. Bugrienko (Fizika tvera6go tau., 1962.* 4t No, 21., 33S2)jq and by V. F. Nisolovp V. V. Foupelovs and V* He Fridkin (Zh, n=chne i prJJclo fotogro i kinematcgr,, 1964,, 99 357)e Measurements were mzdo of the speotral dist:vibution *Z adsorption -and of direct ioa f1w fgr both, the UaGi and K(;l cases. 'r23. rosults Vero plotted as aluma in Figs* 1. and 2 on the Zaclosu", UjU= mwaurm=ts Card I/V_1 - __ - -_ I: - 1 - .. L 52516-615 EVIT( I Pz-6 IJP(;) Jb/AT ACCESSION MI. 'A-F5010703 uR/cjj.81/65/OO7/0*/lO37/lO42 AUTHOR: Gulymov, K.: TMomirovag FTIdkin, V. M. TITLE: Effect- -of high hydrostatic:Erescure -on the -photo-.onductivity- of CdS single crystals SOURCE: Flzlka tverdogo teIlap ve 7, no. 4j 1965, lo37-lo42 TOPIC VM cadmium:sulfide, IWOrostatic pressures photoconductivity. nonequilib- rium carrier, carrier lifetime ABSTRACT; The purpose of the-investigation was to make direct, mea&uxementa of the lifetimes of the carriers as a function of the pressure, and to obte-.n si=ltane- ously information on the influence of pressure on the adhesion levela. The authors measured both the stationary photoevrrent and the phenomenological lifetime of aingle-cryatml 03 in the prbszure , Interval up to 15 1,000 atmp using the b! gh- pressure ch=ber shown In FIg. 1 of the Enclosure. A st:&ndard test procedure was used. The theory underlying the determination of the trile and phenomenological lifetimes of non-equillbrium carriers as functions Of the pressure Is lbriefly pre- 'Cord L 52516-6!5 ACCESSION NR: AP50.10708. sented. The test results show that the variation of the photoconductIvity with pressure is due to changes in both the true and phencmenrological lifetimes of the carriers. The information concernIng the character of the carrier adhesion levels: is not conclusive because of the narrow range of variation of the light intensity in the experimenta. "The authors thank M, K. Sheymkman for %mluablF. remarkE." Orig . firt. has: 4 figures and 9 fdrmul,~-s. ASSOMITT-01f: Institut, krist-allografti, AN S6SRj Moscow 11natitute of' Crystalla- G"-Phy AN 80SR) ,Sep6k- ra SY,7: o=t oo4- Ord M L -9259-66 EVIT(I )/EliIT(m)/EPF(n)-2/EI!I.A(d)/EVIP(t)/T/E'.'/P(k)/r:','IP(b)/Ee/A(c) lip1c) , ACC NRs AP5022712 JD/0/f 111C~OT SOURCE CODE: UR/0101/65/007/009/2723/2725 AUTHOR- Gulyamov~, K.; Tikhomirova, A.; Turyanitsa, 1. D.; F~!~ ORG: Institute of Crystallography AN SSSR. Moscow (Institut kristallografa'i AN SSSR) TITLE: Photoconductivity of HgI2 single crystals under high hydrostatic pressum, 11 S tela7v, I SOURCE: Fizika tverdogo no. 9, 1965, 2723-2725 2) , !/ U , -~- '~__ TOPIC TAGS: mercury compound, iodide, single crystal, photoconductivity, pressure effect, high Rressure research - 21) d1t1' '5 k., ABSTRACT: Photocurrent was studied as a function of pressure up to 17,000 3tmosphere at room temperature in single crystals Of Hg12- Measurements were made on tetragonal single crystals (red mercuric iodide) grown from solution. Curves are given showing photocurrent as a function of incident wavelength for various hydrostatic pressures. The long-wave maximum corresponding to the fundamental absorption edge is shifted in- to the longer wave region as the pressure is increased. This maximum is located at 580 mu (E = 2.14 ev) at atmospheric pressure. The change in energy with pressure 9 conforms to the law d11.1dP = -(9 ' 0.7).10-6 ev/at. The photocurrent first decreases with pressure increase, passing through a minimum in the neighborhood of 700 atmos- pheres, and then increases with pressure up to 12,000 atmospheres. At about 13,000 atmospheres, a phase transition Is observed which is accompanied by a drop in photo- Card 1/2 ACC NRi APS022712 -.0 urrent. Thus the minimum at 7000 atmospheres is not due to a phase transition and is apparently caused by a change in carrier lifetime. This hypothesis is used as a basis for a model explaining the complex relationship between photocurrent and pres- sure for this compound. Orig. art. has: 4 figures, 2 formulas. SUB COM 20,07/ SUBM DATE, OlApr6S/ ORIG FXF: 005/ OTH REF: 004 2 L 18766-66 M(m)/13WP(t) ACC NR: Ap6oo3777 JD SOURCE CODE: UR/0181/66/008/001/0Ii48/.015-1 AUTHORS: Nosov, V.-N. Fri.dkin, V. M ORG: Institute of Crystallography AN SSSR,_!joscow (Institut kristallogram AN SSSR) TITLE: Photoconductivity and lifet1me of nonequilibrium carriers at the phase transition in SbSI 73 SOURCE: Fizika tverdogo tela., v. 8., no. 1, 19661 148-151 TOPIC TAGS: photoconductivity, antimony compound, ferroelectric material, forbidden band, semiconductor carrier, phase transition, electric conductivity, temperature dependence, activation energy, Curie point . ABSTRACT: This is a continuation of earlier work (DAN SSSR v. 161 lo6o, 1965), where it was observed that the temperature coefficient of the change of the forbidden gap in SbSI has an anomalously large value near the phase transition point. In the present investigation the authors measured the temperature dependence of the electric con.. Z. Card IJP(c) L 18766-66 ACC NR: AP6003777 ductivity, the photoconductivity, and photocurrent carrier lifetime in SbSI near the phase transition, and observed the anomalies occurr l ring near the ferroelectric phase transition point. The crystals were grown from the gas phase in the form of needles. The electric conductivity and photoconductivity were measured along the two-fold ferroelectric axis, which coincided with the axis of the needle. The lifetime was measured by a standard pulsed light modulation technique The measurements were made In vacuum in weak fields. The pbotocurmit was measured at the maximum crystal sensitivity. All quantities ex- bibited anomalous changes -near the phase-transition point. The ac- companying change in activation energy of the donor level amounted to~ 1-0.2 eV, which was three times larger than the width of the forbidden .band. To check that the anomalies are indeed connected with the de- crease in the activation energy, the temperature dependence of the electron lifetime was investigated near the phase transition, and ilikewise exhibited an anomalous increase near the Curie temperature. If the anomalies are attributed to the change in activation energy, it can be assumed that the effective mass.an'd the carrier mobility remain unchanged. Theoretical calculations of the variation of the 1SOrd___ -?L3 L 18766-66 ACC NR: AP6003777 'measured quantity show agreement with experiment in the case of the !conduction and dark current- ':tit not in the caso of the photocurrent. !This disparity may be due to the fact that the lifetime measured was not the true one, but the phenomenological one. The authors thank N, A. LNakhovitakaya for supplying the 6rystals and 5. 1. Volobuyeva .1for taking part in the measurements. Orig. art. has'. 3 figuresT' 4 formulas, and 1 table. iSUR CODE: 20/ SUEM DATE: O7jul65/ ORIG REF: 002/ OTH REP: 004 Card L 21 ACC NR. AP6008751 SOURCE CODE: UR/0386/66/0)3/006/0252/0255- AUTHOR: Fridkin, V. m., ORG: Crystallography Institute, Academ7 of Sciences~SSSR (Institut kristallografii Akademii nauk SSSR_T__ TITLE: Some effects due to electron-phonon interaction in phase transitions occurring in a semiconductor ferroelectric SOURCE: Zhurnal eksperimentallnoy I teoretJcheakay fiziki. Pialma v redaktaiyu. Prilozheniye, v- 3, no. 6.. 1966,, 252-255 TOPIC TAGS: ferroelectricity,, paraelectricity, semiconductor carrier, second order phase transition, Curie point, electron interaction, phonon interaction V '- '-1 i~c~` ABSTRACT: This is a continuation of the author's earlier studies of ferroelectr c phase transitions In semiconductors, especially of the AVDVICVII type~_(bokl. AN SSSR V. 1bl, .1ObO, 199-5). In this paper it is shown that the presence of a relative.Ly high density of nonequilibrium carriers in semiconducting ferroelectrics leads to several new effects which affect the behavior of the semiconductor near the phase transition region. It is shown in particular that a sufficiently high nonequilibrium-carrier density causes the Curie point to experience a shoft whose magnitude and sign are de- termined respectively by the magnitude and sign of the constant. The latter can be determined from the relation E - E,0 + aP2 by investigating the anomalies of the for- bidden gap Eg or of the 16'emper�turegcoefficient dEq/dT in the phase transition regione (Y L 21569-66 ,ACC NR; AP6008751 These anomalies are considered separately for the case of a second-order phase transi- tion and for the case of a second-order phase tranistion close to the Curie point. It is shown than in both cases the coefficients of the temperature and pressure varia- tions of the width of the forbidden band experience finite discontinuities whose signs and magnitudes are determined respectively by the sign and magnitude of some constant. This agrees with experimental results by T. Mori et al. (J. Pbys. Soc. Japan v. 20,, 281, 1965), although the numerical value of the constant was not estimated from these measurements. Author thanks 1. M. Lifohits for reviewing the manuscriprt and for a discussionp and Re A. Buris a-nd-A-.-P-.-1FR-rWuk for numerous remarks. orige art* has: .12 formulas. SUB CODE: 20/ OM DATE: 03 Feb66/ oRiG REF: oo4/ oni REn oo4 Card 2/2 -42 AW WKi A770013 SOURCE CODE,,. Up/o386/66/oo4/oi1/o461/0464 AUTHOR: Fridkin v. M. Gorelcm., I. M.; Grekav,, A. A.; Lyakhavitakaya, V. A.; Rodin, A. 1. =2-4-j- ORG: Institute of C~rystallograpbyq AcadenW of Sciences SSSR (Institut kristallografii Akademii nauk SSSR) TITLE: Phase boundary in ferroelectric SbSI as the analog of an electric domain in a semiconductor SOURCE: Zhurnal eksperimentallnoy i teoreticheskoy fitiki. Pislma v redaktsiyu. Prilozheni,ye., -v. 4., no. U., 1966., 461464 TOPIC TAGS: semiconductor single crystal, antimony compound, ferroelectricity~ domain boundary.. phase boundary ABSTRACT: This is a continuation of earlier work (Dokl. AN SSSR Y. i69, no. 4, 810, 1966) where a new optic method of observing the phase transition in single-crystal SbSI was reported. The method was used in the present work to trace the motion of the phase boundaries in SbSI crystals grown from the gas phase in the form of needles (1 x 0.1 x 7 =). The needle axis was the c axis of the crystal. The observation was made in transmitted light through parallel pincacoid (100) faces in a direction per- pendicular to the c axis. The tests showed that a constant electric field applied to the crystal causes the interphase boundary to mave toward the cathode at a rate 10-3 cm/sec. Under certain experimental'conditions (in the presence of a temperature gra- ACC NRs dient in the absence of an external field), undamped oscillations of the interphase boundary were observedj accompanied by electric oscillations in the external circuit of the crystal. It is shown that the observed displacements are connected with motion of ferroelectric regions in the crystal, analogous to the motion of electric domains in a semiconductor. While this analogy does not fully determine the concrete mechan- ism or the direction of motion of the interphase boundary, it does provide an explana- tion for both the motion itself and its oscillations. It is also shown that the period of the oscillations agrees with the value that would follow from the MaxweU time constant for SbSI. Okig. art. has: 1 figure. SUB CODE: 2q/ sm DA=: o9sep661 om rw: oo4/ om Rw: oo4 ~CC NR- AP6015494 SOURCE CODE: UR/0191/66/009/005/1620/1621 AUTHOR: Varkhovskaya, K. A..; rridkin, V. K. ORG: Institute of Crystallography, M SSSR, Moscow (Institut kristallografli AN SSSR) TITLE: On the anomalous temperature shift of the Intrinsic abs4ptlon edge ok DaT103 .single crystals In the phase transition band SOURCE: rialka tvardogo tole, v. 9, no. 5, 1966, 1620-1621 TOPIC TAGS: absorption band, absorption edge, crystal absorption, barium titanate, forbidden band, forbidden zone width ABSTRACT: The purpose of this study was to investigate the behavior of the intrinsic absorption edge of BaTiO3 in the transition from the ferroelectric (tetragonal) to the paraelectric (cubic) phase. Five specimens of BaT103 single crystals (Curie point 0 i = 1050C, forbidden band width 0 9 a 3.2 ev at room temperature) were investigated on a.. Sf-4A spectrophotometer. It was fbund that in the ferroelectric and In the paraelec- tric phases there exists a linear relationship between the width of the forbidden bani 9 and the temperature with an equal coefficient, namely dE V -y= -(7 zt 0.-5) - 1(.)-4',,,/d,g d Card 1/2 ACC _NR1__AP60l5494_'____ 0- Hear 1050C there is a phase shift, accompanied by an anomalous decrease of the Width.- of the forbidden band. A temperature hysteresis with a width of the hysteresis loop a 1-20C was also observed. It appears that the change of the width of the forbidd n banW, is related to the behavior of the heat capacity of BaTL03 in the phase transition 14 ~band. The authors thank Dr. Arend who made the BaT103 crystals available for the ex periments. Orig. art. has:_r_1F9_Uie- SUB CODE- 20/ SUBM DATE: l8Nov65/ ORIG REF: 003/ OTH RM ool Cm.1 2/2 EWT(1)Awr(m)/T/EWP(t)/ETI IJP(C) JD ACC NR, Ap6018559 SOME CODE: wV01811661008100611W7119 AUTHOR: & -14 GUIY&Movl 1K.; IqakhovitLkMj V. .; Nosovj, V. Tikho- Id - Id Rp V - MG: Institute of CrysUllogmpbyp AN SSSR, Moscow (Institut kristallografii AN SSSR) TITLE: Anomaly of optical properties of ferroelectric SbSI the phase-transition region . I,/ ~_T t~ SOURCE: Fizika tverdogo te3.&, V. 8, no. 6, iW, 1907-19o9 TOPIC TAGS: antimorw compounolp phase transition, Curie point, ferroelectric property, forbidden band, pressure effect, paraelectricity, electron interaction, phonon inter- action, temperature dependence, absorption edge 10r4_ PAa&4-~r' 'ABSTRACT: This is a contimiation, of earlier work (DAN SSSR v. 161, lo6o, 1965), where 4an anomalously large shift of the intrinsic-absorption edge vas observed in SbSI ,single crystals with increasing pressure. The present study is devoted to a more de- tailed investigation of this shift, and discloses that the anomaly appears only *in the vicinity of the phase transition. The authors measured the dependence of the width of the forbidden band Z on the bqdrostAtic pressure p and the temperature T in the phase. trsLy, ition region* Ke crY6t&3.8 were grown from the gas phasej, the width of the for- bidden band was determined by measuring the shift of the maximx= of the yhotocurrent, and the high pressure was produced with apparatus described elsewhere (M v. T, 4., 3965). The pressure van measured with a resistance manometer and the temperature was 2 L 04787-67 L'W,'ri EWT /LWP( t ET I _1,JP (c)_ ACC NRt AP6024469 SOURCE CODE: UR/0181/66/008/007/2084/2086 AUMDR: Gulyamov, K.; Tikhomirova, N. A.; Turyanitsa, I. D.; Fridjdj4_y. M. ORG:.-Institute of Crystallography, AN SSSR, Mosoow (Institut kristallogafii AN SR) TITLE: Photoconductivity of Sb13 and W3 at high hydrostatic pres- sures T~? 11 -17 11 SOURCE: Fizika tverdogo tela, v. 8, no. 7, 1966, 2084-2086 TOPIC TAGS; phoLo,.xxiductivity, spectral distributicn, anti:xamy --avVou-nd, bismuth 0OW-1. Puund, iodide, fovijiddea bmd, pressurc, eff=.s car74_cr lifetim, electivn mixgnbina- tion A0.11MA : Rlomijoledvd! cLysLcLls w,_m, UG;,.n, fmm, t1ra gaz 2-n the form ~-f rlet-A 111k:asur.Lng.,G.1 x 0.5 an and their photocondu~tivity-was imestigated at pressures up to. 14 , 000 'dLnrjE;Vheras at room teq)erature. The masummants mrs made in a high- pressure multiplicator using a procedure described earlier (FIT v. 7, 10379 1965 and earlier). Me tesLr, yielded plots of the spectrul distribution of the phato-curTent, the vuldtion of tle_ width of the forbidden gap with prussure, and the pressure de- pendence of the relative density of the dark c*urrents Mic tests have shown that the i1exinki of Lhe spectrta dibtribution of tho photocurTcnt chifts toward longer reve- lu- %Lhs for boLh v4yutals. M-ie press-,we dependence of the photo-current was also mea- surved. In Sb13 a rstrong increase in the photocument is accompaned also by an cit:cL,,e. bi Lie dcuk cuixtait, whereas in WIT., t~_- dari-, --ur-.--nt da=,~mseq un-V-r Card 1/2 251210- FRIDKIN, V. YA. Kepillyarnaya Set I legkogo L EE Vliyanie Na Kharakter Rentgenovskogo Izobrozheniya Legkikh. Terap--v-t. Arkhiv. 1949 4-S. '110-38. SO: Letopis' No. 33, 1949 "Capillary Network of the Lungs nnd Its r;ffect on the Character of the X-Ray Picture of the Lungs.." Terap/ Arkhiv., No.4, 1949 Central Sci. Rea. Inst. Roentgenology and Radiology im. V.M.Molotov FRIDKIN, V.Ya.; ZHISLINA, M.M. Certain characteristics of the X ray picture of lobar atelectaids. Vest.rent.i red. no.5:14-20 S-0 '53. (MLRA 7:1) 1. Iz kafedry rentgenologii (zaveduyushchiy - professor Yu.N. Sokolov) TSentrallnogo instituta usovershonstvoyaniya vrachey na baze bolluitsy im. S.F.Botkina (nauchnyy rukovoditell - sasluzhennyy deyatell nauki professor S.A.Raynberg). (Lnngs--Collapse) (X rays) cV( , I 'ti FROKIN, Y.Ta., dots.1 RYBAKOVA. N.I. oentgenanatomical comparison of bronchial and pulmonary charges in primary lung cancer [with summary in English). Vop,onk. 3 no.4: 430-434 '57- KIRA 10:11) 1. Iz 2-y kafedry rentganologii i meditsinskoy rediologii (zav. - prof. Yu.N.Sokolov) TSentrallnogo instituta usovershenstvovaniva vrachey (diro - V.P.Ioebedeva). Adres avtorov. Moskva. TSentrall- nyy institut usovershenstvovaniya vrachey. (LUNG NNOPLASKS, diagnosis, x-ray & anst, changes in lungs & bronchi, comparison (HUB)) D,o, FRIVIN, V.Ya.~Oae Med Sci -- (diss) "Dite for of the blood system of the lunFs." Mos, 19581, 21 pp (State Sci Ile:; Roengcno-~qdinlogy I Inst -) * RSFSR) 150 CoPies (KL, 2~-58, 109) - 71 - FRIDKIN, V.Ya.; ROZENSHTRAUKHj L.S. Bronchial tree in lobqr and zonal atelectanis and pulmonary cirrhosis. Vop.onk. 5 noilOs425-431 T., (MIRL 13sl2) (LUNGS-COLLAPSE) (PULMONARY FIBROSIS) (BRONCHI) FRIDKIN, V.Ya.; GELISHTHYN, V.E.; ORWY, V.11. (Moskva) Hlectrok,moo~aphy in the diagnosis of lung cancer and mediastinal tumors. 3(lin-med. 37 no.8:106-112 Ag '59. (MIRA 12:11) 1. Iz pervoy kafedry rentgenologii t meditsinakoy radiologii (zav. - xnalushennyy deyatel' nauki prof.S.A.Raynberg) i pervoy latfedry terapii (sav. - deystvitel'nyy chlen AM SSM prof.H.S. Tovei) TSentral'nogo instituta usovershenotvovaniya vrachey (dir. V.P.Lobedeva) na baze Bollnitsy im. S.F.Botkina (glavnyy vrach - prof.A.H.Shabanov). (LUNG, neoplasms) (MEDIASTIMM, neoplasms) (KY740GRKM) ROZZNSETRAUCKH, L.S.; SOKOLOV, Yu.H.; FRIDKIN, V.Ya. (Moskva) On a unified nomenclature for the bronchial and vaocular oystems of the lungs. Veot.rentj rad. 34 no.6t3-11 N-D 159. (LUNGS anat. & h1itol.) NIM 13:5) SHEKHTERt I.A.t prof.;. FR-I-DKINv V,.Ya., 4oktor mad.nauk "BronchiographyN by IU,N. Sokolavv L.S. hozenahtraukh. Revioved by I.As Shekliterp V.IA. Fridkin.- Veot. rent. i rad. 35 no. 2:811-90 Mr-Ap 160. f (MIRA 14:2) (PONGHI-RADIOGRAPHY) (SOKOLOVt IU,PJ) (ROZENSHTRAUKH, L.S.) FRIDKIII, V.ya.;- zHUSLINA, M.M.; GELISIITEYN, V.Ye. Acute pulmonary edema; clinical roentgenological comparisons. ralim. med. 38 no.5s72-80 My 160. (MIRA 13112) (PULMONARY EDEPIA) FRIDKINq V.Ya. (Moo'kvaq Pyataitakayw ul.p d.49, kv. 25) Radiographic picture of the mnal.1 and mimite pulmonary blood vessels. Vest. rent. i rad. 36 no. 1:28-33 Ja-F 161. (MIRA 14:4) (LUNGS-RADIOGRAPHY) FRIDKIN, Veniamin Yakovlevich;.'~ENTSIANOVA., V.14., red.; KOROLEV, (Anatomicofunctional foundations of the X-ray picture of the lungs] Anatomo-funktuionallnye osnovy rentgenologiche- skogo, izobrazheniia legkikh. Moskva, Medgiz, 1963. 189 P. (MIRA 16:11) (LUNGS-RADIOGRAPHY) FRIDKIN, V. Ya., doktor med. nauk Review of L.S. Rozenghtraukh and II.I.Rybakov's book *Clinical X*ray diagnosis of paragonimiasis."'Vest. rent. i rad. 38 no.5:74-75 S-0163 (MIRA 16tl2) WIDV, Yuvenaliy Aleksandrov-ich; FRIDKIS,-- Z.-I., retsenzent; BOGOSIAVETS, N.P., takhn.red. [Air and electric-&rc metal cutting] Vozdushno-elektrodugov&is. reaka motallov, Moskva, MaBhgiz, 1962. 103 p. (KEU 15:5) (Electric metal cutting) VAYIER, Sh.A., inzh.; VAYNER, S.A., inzh.; U"SOLITSLV, V.A., inzl,.; FOKIN, V.M.p inzh.; SOTSIKOV, N.I., inzh.; ZAIMM11G, 3.1111., Inzh.; SIGAMVP V.S., Inzh.; BRONSHMI), L.1%, inzh; YUNGER, S.V.p kand. tekhn. nauk; BATYREV, A.V.p Inzh.; BnDv4KIN, YU.F., inzh.; RYZBKDV., N.I., inzh.; YAKHNIV, A.L., inzh.; FRIDKIS, Z.I., Inzh. Furnishing the SGU gas-cutting machine with a FOS-4 scale photocopying control system. Svar. proizv. no.9:34 S 165. (WFA 18:9) 1. Vsesoyuznyy nauchno-issledovatellskiy institut tekhnologil mashinostroyeniya (for Sh.Va~nor, S.Vaynert Usolltsev, Pokin,, Sotskov). 2. Volgogradskiy zavod im. Petrova (for Zandberg, Sigarev., Bronshteyn). 3. VPTI khimnefteapparatury (fcr Yunger, Batyrev, Bodyakin). 4. Ural.skiy zavod tyazhelogo mashinostroyeniYa imeni Sargo Ordzhonikidze (for Ryzhkov, Yakhnin, PrIdkis). Fri IDIA14D see also ITUDLYAND

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