SCIENTIFIC ABSTRACT MOCHAN, I. V. - MOCHENEV, S. B.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001134820014-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Sequence Number: 14
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

2'4D83 S/1 61/61/005/00,)/01
woo B 102/B 104
AUTHORS: Mochan, 1. V. and Smirnova, T. V.
TITLE: Stud,~ of the thermoii,aene tic and Calvanomaf,netic -.ropcirties
of p-type PbTe
:'ERIOD] Cj\L: Fizika tv,~rdogo tela, v. ~, no. , 1961, 26',q-,,6rJ,'-
TEXT: The authors measured thermo-emf, electric conductivity, i1all Lffect,
and transverse Nernst effect in 4 specimens of pure p-type PbTt:!. une
specimen was coarse crystalline, the others aintle crystals witn
different orientation. The impurity carrier concentrations '1-eru bet-,,(-en
5.1017 and 1,10 18 cm- 3. After heat treatment at 500oC to which all
specimens were subjected, the carrier concentration slightly decreased.
The measuring arrant --,ment and the method employed were described -,ilread~
earlier (I. V. Mochan et al. FTT, 1. 13~1, 1959). The authors measured
the temperature dependences of the thermo-emf (a), of tLe iiall constant 'ii"
J9
of the conductivity (c), und of the transverse Nernst t~ffect k), further-
more, the Hall mobility (u 0.8~ !tc), and the Nernst mobility
Card 1/5

^83
Study of the thermomabnetic B 1 02/i~ 104
( U. N =I 6e~,,/3 Tik) .Specimen no. 1 was studied in a series of measurements
made bet,.veen room temperature and 4600K, in a secona series
1,110 and ~300K. The specimens 2-1, 2-2, 2-3 were studied oi-Ily in ti.~ rang e
100-3000K. It was found that in the second series of measurement.,1 H -&a3
lart,,-er and c smaller than in the first series which is ascribed to a
decrease in tile Impurity carrier concrintration. Thin is also indi(,11t.11rj 1',
the change of the sign of Q v~hich took place ut a temperaturo which witn
100 lower than in the first series. In the range of mixed conductivity
was determined from
'2 (dEO -+- PT)
Q 3r. k I -#- v263 -kT 4- 7) 6 (1 -#- b) v
where n-/n+ and b u-,,"u+, AE0is the forbidden band width at CoK, , is
the temperature coefficient of h6i~. The values -e,,hich hold in trie impurity
Card 215

20083
5,', 6 1, ~ 61 :00 ~, 0 G 0
St,idy of tn ~ thermomaene tic B102,/B104
region were calculated by substi tut, on of' the Hall mGbJ 11 t.,, -- f the ~.oles
and 'by extrapolation according to the law u ii - 'r- 2 ~ v ,as c;tlculated
with 8 = 4,10- 4 e v tir.d n 0 ~ t h e c o n c e n t ra t i o n o f t ne 1 m 1; u r i ty c a r r i e.- s,
I-V I
was dp '-bE/2kT). c 2rtmkT,'
termined by relation no c exp
The irreversible change of all ch arac ter! s t i c parame ters, v:..i ct. o cc - rre ai n
specimen no 1 during the first series of' measurements althou~~:h it -Aas less
heated than during annealing, agrees with the results ~~f T L Koval 'e.,,ik
and Yu P. "Inslakove-ts (ZhTF, 26, 2417, 19~-6), -- hi 1 e u,, T- s e, ~'. ~
sati sf! ed in the enti. re rank-e, a deviatioci from the law u a and
b are e-iver, in the fable) was observed t,elow 1400K An an4lysis -)f the
result~3 sho'hed that the scattering from the impurity ions would be, bound to
distort tho- course of the %ernst mobility :r.~~ch more strongly than as
ob3er'le,I experimentally TiAs is expiained by the assumption of ar,
additional scattering mechanism, e 6, scattering from optical vibrations.
Phe authors thank Yu Ii Obrazt!30V for revision of' the manuscript and for
discussions I ~, ITsidii'kovskiy, Ye L bevyateova, and I A S:i~i rnov
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i8ij 61/OG3/00(j,~', I I-) 'W,-,
Study of ttie thermomagnetic
are meriticroA i1ere are .~ fiture~~,
and 9 nori-Soviet Trie four most
uublicat-.ons read as follows: R
1029; Allt-~ii er i~ hy 4
3oli,j State Phys 114, m5. '9~-J)
P hy s , ~ , , 1 h A , 60
1 !' able, ~-rid 15 references: a Soviet
recer,t references to Er,~Iish-lanFuat,e
Allo~aier, "t Scalon. Phys. Rev
Rev 112, 929, 1956 N 3 C a I, 10 h
R ;1, re 1; z- i c K , It A1 1,,;i i er, 1~ o u un f-In
ASSOCIATION: Ins t., tut po luprovodni kov AN :~-'Sk Len : rigrad " Ir,s 'i t,~ t e of
S,~miconductors A3 SSR, Leni:~ra,.,
SU 31.:1 T PED: Apr-1 1 6 1
Legend to t~~e lable numb er o f spe c i m en ~2) orientation ivith respect
to tile axes X.Y;Z; R in cm!,'coul; n "I c"r -
2,a in cm-, ,v sec; to;' 2u: i,., cm3 f v sec- ill' U1 u, '12) a, 1
'1, i~ f- Val,-Ies 'ri th N are mean values c o d r s specimen. 011 ser-~esz.
The curr,~i.t or the:mal flux ~;er~ r.ented 'In the X-direct~on, trie -,-,i a C n c- t i c
field in the Z-direc,ion tne volltut~ was measlir,~~d in t~i~ Y-directioi
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Nh,-re the qu~-,simomentum p h 3n/8n These Can be used to

S/I 21/62/UQ4//004/02f3/042
3"11- 2,13 10",
t"IQ tnt:: al'o Lne Hall
e t t! c, n t c o ne e n t ra t i on s.
Tne a,;L.I~,ors ~asea the re!Ltlons t-D --,ete;,jajrc- t I-It: (-Iffective mass on the
b 3 -, t,:) 7:, Of 'hEJ n,; t, 1, LnL- tn~-'r.-..O-emf ir. t~ntrate samples:
11 IM forb~dae;-~-b-nd widtr, ard the 9 pi n-
2 2
Oro I t a ~i p . 1 t I a I - p
03 e 2 2 1 v 0 9
E E
d 1 d d, 2
2 2 2
+ 2
2 L r, n hold for
a-01t.-ary c 'r,e c.,,,-r-' ed out bet,.,;een 90 and 1 BOOK
cr~ s, t s i conceritrat i ons .0~ and
a 1. t:-, t'N 3 ~j P e i n~ ~, ~3 a' Sim
r at us are describ~--d in F--T, 1, 15' 1
1 10 CM i,, o d
9 Fo r :1 0. 2 1 , v ,-u. c, .2v, tne nefin value obtained for m*
t-~mperature indepen-'ent ir. -~.e ranCe 100-1450K, was (0.0145 1 0.0007)m.
it'l the -qs. (4), (~) for j; 2, 1,* = G-~D!75 n- 4itain the limits of
Card

De t i--rm i or) 04, ti,e e I"j c t i 10 2,; ii I C) /4
(~rl*Or, the value for m' obtainl a6rees t"lose cbtained from
G
,T, e a s u r ~-.,T, e n t s o ff rc r,, * h er;A ! ae .' f ti Can a'u. --~tlcai constants.
A. I. Anse: ' im, ~J. ~". t'%uKerov, ;,i,d Yt3. aru thankud for
d -I' s cu s - I c) r, s .-.'hcr,~ ark-, 4 fik~ures anc 1 table.
"ISOCIATIO:,': lrst4tut -c.u-)rcvodni&ov AN SSSR Lerdn6rad
(Institute of
AS SSR, Ler,"Ln6rad)
SUE,~IIITTED: December -3, ll,~61
C;~.rd 4/4

s/181/62/004/009/025/045
BIO4/B166
A.UTHU6 Dvic,;ro, ~-. L. V and Obraztpov , Yu. N.
TITLi~; (?I tio-, inijotropy in tile electrical
C i v i !"y C. ft e I I Ur 41 w'!
IlEh 1 OD IC tv,,~i I o,r) tel,i, v. 4, no. 9, 19t)6', 2514-2j20
TEXT, e ne Ifor Jet,,r-:AnirfL, ti,~e anisotropy in the
jin'le cr,-Otalo cut oat
uniaxial Lt2lluriu:r. at
i A,,Live t,-, tio-, C-axis of' the crystal. 'Nhen a curront floAu
~ii-.)n,- ~,axio of i~ ipecinen (Fi6. 1), tile equipotential our 'faces will
IiE~ ~icul~r to thtt plane of tile figure. On account of the anijotr-)PY
in the ei~~ctric;ti conductivity, the equipoteniial surfaces form the an6le
y viitn t1i- Y-axi6. y i.3 determined witn the fixed probe and the tobile
Probc In the apparatuo, is described in detail the temperature
is meaulli -~i with thermocouple.;. Tile probe is moved cy micrometer acrewn.'
The zo~i%-,otropy is calculated from the measurements using
Card

Irlvetlti, ;()T, of' tilt'. -,r:. s/lo 1/62/004/009/02~/04~
B 104/B 166
a
-j, q-j7 Tp
-4- 008' (P)
dl
0
1 tne elect rical crm,iuct, ivi ty of the spec I :Seri cut out at the
he tel i uz,iu-,: ~3pec imen L; were t. ei ice d i - t i-J i n vacuo ard "Rel t ed
ill VAl I'll dtTlOjt)hUr(2. sin6le crystals wert: ;rown by slow cooline,.
It was ")urld trl~kt ".0 1 j.1 ~lnd that it was te:%cerature-independent
ill tilt ; , . - 7b - 20C,')K. There. urf~ u fi urf!Li ~Lnd .' tables.
JtJ UC1,,T! Institut i)r-j1uprr)v(Anikov AN 33~'R, Leninjrad
(Inutitut- of ")'emiconductors A3 U~;jh, Leiiin,lrrad
:,,,Iy
Card 21)

:n%-cstigation of the transverse and longitudinal Nernst e":'Facz .;,n stron;
' I. L. Orichko, 1. V. M"han,
..z,cnet.c ficids for samples of n-InSb. --- - - -1.
-. V. Snirnova.
(Presented by S. S. Shalyt--20 minutes).
Report presented at the 3rd National Conference on Semiconductor Corpo- nds,
Kishinev, 16-21 Sept 1963

DRICHKO,, I. L.; -I. V.
IIAn experimental irvestigation of the thermoelectric power of n-In-S)b in
high magnetic fields."
report submitted for Intl Conf on Pbysics of Semiconductors, Paris, 19-24
jui 64.

DRICHKO, I.L.; MOGHP11) I.V.
Thermo- e.m.f. of n-type indium antimon-ide in nign
fields. Fiz. tver. tela 6 no.6:1902-1905 Je 't4.
(MI-A i ": - 'I
1. Institut poluprovodnikov 91 SSSR, LeningraQ.

L 5398-66 11P(a) AT/JD
ACC MR* APS027403 SOURCE CODE: UR/0181/65/007/011/3260/3269
AtMfOR., Drichko, 1. L.; Hochan, 1. Vo
j 7
ORG: Institute of Semiconductors, AN SSSR, Leningrai(Institut poluprovadnikov
SSGR) I/
21 "0(4s
TITLE: Microscopic Irregularities and the Nero t_zfYzct'in InSb
SOURCE: Fizika tverdcgo tela, v. 7, no. 11, 1965, 3260-3269
TOPIC TAGS: Nernst effect, i_ndium compound, antimonide, semiconductor research
/%~ 1 -7-7
ABSTRACT: The Nernst effect is studied in n-InSb specimens with various impurity
concentrations. According to theory, the Nernst constant Q should be proportional
to the square of the magnetic field strength In stropg magnetic fields in the clas-
sical region (where quantum effects may be disregarded). The experimental data do
not coincide with this prediction. It was found that in magnetic fields of