SCIENTIFIC ABSTRACT ZHIDKOV, S.K. - ZHIDKOVA, Z.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R002064720020-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 20, 2001
• Sequence Number: 20
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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8/1 12/59/000/016/04VO54
A05VA002
Translation fromi Rafe rativnyizhurnal, Elektrotekhnika, 1959, No. 16,.P. 198
34919
AUTHORS: Zhidkov, V. Khomenko, L. 0.
TITLE- A Case of-Origination of-Dislocations in Oermanium~l
PERIODICAL:, Nauk. shchorichnyk..Radiofiz. fak. aivalk. un-tu, 1957, 'pp. 492-493
(Ukrainian)
TEXT; the change of,electrophysioal propertiss of Go singleerystals an a
result of heattreatment,at~temperatures of 840-940 C was investigated. The
heat treatmant%was~carried out byinduction heating of ainglecrystals grown by
ChokhraVsklyls method without*takIng them out of the crystallization furnace.
.,Such a heat treatment did not change-the type of conductivity and the apecifio
resistance but.reduced,sharply (to 1 microsecond and less) the lifetime of the
..'secondary current carriers especially in the upper part of a crystal(even at a
considerably,increased cooling time of a crystal). It is assumed that a crystal
isbeing deformed under its own weight (30-50 g) during heating whereby tlze
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v-A
UTHORt ZHIDXOVpV.A., LASMUREV,V,Te. PA 3537
-
--
-
-
:

IV d
Electric State of Thermal Acceptors in Germanium,
sTo
h
in
Yiffu
(Diffuziyai slektrioheskoys sootoyaniye tormichookikh Aktoaptorov,
v,germaniip Russian)
PERIODICALs Zhurnal Tekhn. Fiz-P 1957, Vol 27P Nr 5, 877 - 883 (U-S-SOHO
LBSTRLCTs The repetition of the experiments carried out by MLYBURO
(phys.Rev., 95, 38, 1954) with samples of different lengths in the
vacuum and in a helium atmosphere by using both alternating- and
parallel current showed that the process for the removal of thermal
acceptors- bv heating electric current is much more complicated
than was assumed by.MAYBURG. Germanium monoorystals of prismatic
ships and 6 - 30 mm length and a arose section surface of 2 - 8
mm were used. The construction of the apparatus and the method
of thermal treatment were described by the authors already in lant
ser.fiz., 20, Nr 12, 1956, By hardening by means of switching off
the current it is possible to determine the dependence of the
concentration of the thermal acceptors la on the time of heating
for the various stages of heat treatment. There were 4 such stages*
'It was shown that when passing from heating by means of alternating
current to heating by direct current at temperatures of more than
8000 C the speed of purification increased considerably. The ac-
celeration of the purification of germanium from thermal acceptors
Card .1/2 by means of direct current proves the ionizo4 state of the admixture

F it', ji~ I i;$: f 1,11 p-
PA. 3537
Diffusion and Elootrio State of Thermal Acceptors In Germanium.
under these conditions. The theory of purification is given and
compared with the experiment. Experiments showed that the behavior
of the aoooptorn removed from the germanium in similar to that
of copper in germanium. Exper onto carried out with samploo
saturated with radioactive Cu9W showed that after 10 - 3'houre
of heating by means of alternating current at 815 - 8500 C a
considerable activity of the tantalum electrodes sets in. Binding
copper to tantalum which is in contact with germanium has for the
first time been proved by this work. The dependence of the
diffusion coefficient of the thermal acceptors on temperature
was found and a dependence of the name on concentration was
presumed. (6 illustrations and 2 Slavic references)
ASSOCIATIONt Physical Institute of the Academy of Science of the W.S. R.,
Kiev State Univerdlity.
PRESENTED.Bre
SUBMITTEDs 5.11-1956
~:.AVAILABLEi Library.of Congress,
Card 2/2

I.M., kand.tekhn.nauk; SABITVV, M.P., Insh. YMDKOY. ToA. ingli.
p 1 p

5/181/61/003/001/024/042
"~',:?'V/ BOO6/BO56
'AUTHORS.-, Belyayevp Yu. I.-and Zhidkovt V. A.
TITLE. Diffusion of beryllium in germanium
PERIODICAL: Flzika tverdogotela, V'. 3, no. 1,1961, 182-184
Following a previous iaper,(Ref. -1), in which the authors~studied
the,olectrioal and-recombination properties of Be-doped germanium, they now
report on investigations of diffusion And on the determination of the
diffusi6n,ccefficient as well'as the solubility of Be in Go. As:initial
substanedt antiinony-doped germanium-single crystals having a*resistivity of~'l
1-8 ohm-cm.were used. The 2 X 3 X 10 mm specimens were etched in boiling
Perhydrol, after which a 10~Lthick Be layer was sputtered in vacuo onto
th.eir P-nd surfacea. Forthe purpose of rendering diffusion easier, the
ecimens we .re heated at 920-7200C in evacuated quartz tu -3
a
p bee (10 mm Hg)
for 24-15Q hr.~ 'As the Be layer was visible also after this procese,la:
continuous subsequent supply of Be.atoms into the interior of the Ge crydals
could be assumed. The distribution of these Be atoms may therefore be
Card 1/3

S/1 M1/003/001/024/042
Diffusiwof beryllium in germanium Boo67B(0(56
Aesoribel by the relation o(x,t) CoO - t where co ta the limiting
2 VYt
concentration of Beq:and D is the diffusion coefficient. By this diffusion
of. Be (which is an.acceptor impurity in Ge) a p-- Junction was formed at a
certain depth; the depth of, its position could be db6ermined as 15-7014
(arror.+2~L). At each temperature, several specimens with different
antimony concentration were investigatedp and thus the donor concentration
and also the,p-n junctionfor each sample differed. By removing layersq:,
by several measurements of the carrierconcentration, and by determination
of theposition of the:p-n.junation, several points on the curve o f(x)~
could.be determined at.~oneand the same temperature. Thus, the depth
distribution of the carrier density could be determined. In the diagram
shown here, curve 1,ahows the temperature dependence of the diffusion
coeffioient ofBe in Ge, curve 2ahows the diffusion coefficients of Zn in
Ge,-and curve,3 shows the temperature dependence of the limiting concentra-
tion co (right ordinate) on Be in Ge. co was determined from the so.lubi- 7
lity of Be in.Ge at a given temperature. At the point where the thermal
probe determined the p-n Junction, p sx n(u-/u+) was found, where n and:p
are 'the electron and hole concentration, respectively, and u-, u+ the
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31/18 P~'003/001/024/042
'Diffusion of beryllium in germanium B006 B056
7B
As Be is doubly:iohized st room temperature, e p/2 -:nu-/2u,.
From'thecurve it is possible, with satisfactory accuracy, to determine
the.relation D,. 0.5 exp(-2.5/kT) for D. The maximum solubility depends
only slightly*on temperature., The;error in D-determination was 2oYc, and
-determination, 56~~. , The, authors thank I. A. Radziyevskiy for
in the c,
placing the Ge 'single arystals.at their disposal. There are I figure
8 references:'4 Soviet-bloc and.4 non-Soviet-bloc.
ASSOCIATION: Kiyevskiy ordena Lehina gosudarstvennyy universitet im.
T. G. Shavchenko (Kiyev~,-Order of Lenin" State University
imeni T. G. Shevchenko)
1960
SUBMITTED: July 20
Card, 3/3

2012~
8/18 61/003/002/022/050
/0 1~
B102YB212
AUTHOR: Zhidkov, V. A',:
TITLE* Constant o6ndentration of thermal acceptors in germanium
under vari ous conditions of heat treatment
PERIODICA1,; Pixik4 tverdogo tela, v. 31 no. 20 19611 459-463
..TEXT: Although the constant concentration of thermal acceptors in gar-
manium has been repeatedly investigated, to studies have been made over
thewhole temperature range (550-930 C) where thermal acceptors can be
found. Results of 8uoh inventigatlons show considerable divergence In
the range above 7 20 C.. The author reports on studios which have boon,
made over a wide temperature interval. The samples have been tleotrically
heated in high vacuumj and the ourrent,was applied to them over tantalum
electrodes.- The thermal acceptor concentration (activation energy of
0-04 evi has been measured In the center of the samples which where kept
in vacuum. The measurements were made via '.he Hall effect at such low
temperatures that the concentration of the thermal holeswas constant and
equal to thedifference of thermal acceptor concentration and primary
,Card 1/6

20124
Constant concentration of~thermal.... B/181/61/003/002/022'/050.
B102/B212
donors. If the heat treatment at constanttemperature lastedlong enough
a constant.,value(Nat) of the thermal acceptors was reached. Thesvalue
a
t
of N was mainly a function of purityj and copper,, especially proved
a
to,,be disturbing. Besides of quartz the vacuum chamber contained only
tantalum and m.olybdenum which do not react with germanium. In order to
avoid contaminationfrom. the elsotrodesp these tantalum electrodes were
0
heated-in the vacuum to 1500,C and the samples were etched for ton minutes
in. boiling perhydrol and after, that washed in distilled water. The
electrodes and sample were again subjected to the same process after
mounting. ~The heating of the samples with electric current oaused removal
of thermal acceptors by.evaporation, diffusion to electrodes or electroly-
sis; e.g.p'at a temperature of 6100-7000C (here, evaporation hardly takes
place and acceptors are without charge) the sam3les had to be heated for
.far above ton hours in order to reach N".4 1.1ol cm-3. It was not
a
'possible at those temperatures to remove thermal aqoeptore from unpuri-
fied germanium, and.aloo the steady state at NO% for instance is
already.reached after ten minutes. Pig. 1 shown a comparison of the
Card 2/ 6

2OMt -
Constant a ncentration
9 of thermal ... S/18IJ61/003/002/022/050
B102/B212

obtained by V. V Ostroborodova
-~uthorla results 0 2 3 4) with those

nd
a ~MayburgI
S. :G. Kalashnikov (full line), (dash-dotted iine), and
.
Hopkins.et al. (dashed fine). 'i The unetched sam
ilea (data 2) yielded
the highest Not and under the best teqt conditions the lowest
values fox
_(4)0 a I(K 5 1013, m 3
values f:iX were obtaink C at 9400C). At a given
a*
U -e N at, is 6h1 L: function of parity. The valu e and temperature
t
emperat x
-
at
epe *6f 'are o'
d ndence. n1 a function of the degree of 'copper contamina-
a,
tion. of the germanium sample. 7~The energy model for producing thermal
of atoms
:shown in Fig. 2 is used to
calculate n, the number
as
acceptors
.
.
.
:
Nat the number of atoms which are
that-have left the lattice nodes and
'
occupied by.copper atoms (in equilibrium.state), The following formula

is obtained if X
>>
E
C a

i7 x'
N
a p

E
a
it 1 2
-
+: 0 XP

Ca
3
~Z

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: ~, 1! ~ 'N1 !,.flI
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, R~ "I I ;

7

1
6
one an concen ration- of'.thermal. S/18 /003/002/022/050
Y
B I 02
B
12
2

N'at can-be a plai necl, with',the.-model (Fi g. 2) if it is assumed that Cu.
x
a
in, Ge' can ' b a i n two. di ff eient states (0-04 and'O.25 ev,aotivation energy)-,
The author. thanks V. Ye.. Lashkarevi, Academician of the AS UkrSSRp f or i
I ref erene as:
~discussion- Frankel' is imentioned. - There are 2fi urea and 5
9
5 Soviet-bloc and .10'no,n-Soviet-bloo.
ASSOCIATION: Kiyevskiy ordena Lenina gosuniversitet im. V. G. Shevchenko i
'Institut fiziki AN USSR
.(Kiyev Lenin.Order State University imeni T..G4 Shevchenkof
Institute of Physics AS UkrSSR)

SUBMITTEM~ May 16 1960

''Card 5 6:
W:

c d 616~

20125
S/18 61/003/002/023/050
LL-0
9 IA300 3 S, B102 212
AUTHOR: Zhidkov, V., As
TITLE: Thermal acceptors with a high deposition in germanium
PERIODICAL: Fizika tyerdogo tela, v, 3, no. 21 1961t 464-475
TEXT: This paper is an addition to the joint effort of.the author and
V. ~Ye. Lashkarev, where it had, been. shown that besides thermal acceptors
with'& 0.04 ev activation inergyq which are produced in germanium b the
influence of temperature, (they are called "low-deposition" acceptors~
but,undercertain conditions there might be also such with a 0.25,ev go-
tivation energy ('!high-deposition" acceptorls)i here, the author reports
on investigations of "high-deposition" acceptors. The kinetics of low-
temperature tempering, the condition-for production of these acceptors
the temperature dependenoo,of the constant concentration~and the influence
of beat treatment conditions have been atudie T~e initial Go single
crystals had a donor concentration of < 10101~_cm and measured
1-3 3.5 20 mm3. Heat treatment was done by electric current passage
Card 1/ 6

-20125 -
'Thermal acceptors with,*#!, 5/18IJ61/003/002/023/050
B102/B212
(d.o. and a.o.)t electrodes and probes were made of tantalum. The Hall
constant and.6onductivity have been measured In various parts of the
samples. - W10 the low-deposition Aoaeptor concentration has boon measured
at T < 150 OK~ i.e.t where the.high-deposition acceptors had not been
onized. The.high-deposition acceptor concentration N had been do-
2
termined from the temperature dependence of the thermal hole concentration.
Special tests which had been performed to determine the upper limit of
N furnished the value N -loll cm-31 after high-temperature
2 4-5
14 -3 01013 -3
treatment and for N ad N am the
1.4 10 cm result
2 ' 5.6
high-deposition acceptor ionization starts at T w 1500K. High-deposition.
acceptors had only been-found in samples heated to 800-900 0C1 and their
concentration is a function ofthe purity of the sample surfaoe,and that
of the tantalum electrodes# Etching in.boiling perhydrol add sub-
sequent washing In diTtille water made it possible to keep a constant
4
concentration N28