SCIENTIFIC ABSTRACT V. M. FRIDKIN - Z.I. FRIDKIS
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CIA-RDP86-00513R000513710015-8
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S
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100
Document Creation Date:
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Publication Date:
December 31, 1967
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SCIENTIFIC ABSTRACT
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2h4l7
S/051/61/on/ooi/oo4/006
On the light emission ... E036/E435
that charged layer effects are seen in Tal and TaBr. Microscopic
examination of these effects shows them to be a surface phenomena
located near the electrodes, a strong electric field being created
in this region. According to H.Kallman (Ref.5: Phys.Rev., 97,
1596, 1955) ultraviolet irradiation during the application of the
polarizing field forms a comparatively stable photoelectret, for
relatively low polarizing field intensities, when little
homogeneous charge was created. It is found under the conditions
of the present work that if the ultraviolet irradiation occurs at
the same time as the polarizing field is applied,or after its
removal, the luminescence during the application of the reverse
field is markedly reduced. If the ultraviolet exposure were
sufficiently small ( 4lo-5 watt sec/cm2) on applying a field
an in~.rease in luminescence occurred, independent of the direction
of the field, the Gudden-Pohl effect. For larger exposures, the
sharp decrease mentioned above is observed. By illuminating the
condenser with ultraviolet light through a negative and
subsequently applying the reversed field, an image of the negative
is obtained. To explain the main features of this paper the
author proposed a tunnelling mechanism in which the conduction band
Card 4/6
24417
S/051/61/oll/ool/004/oo6
On the light emission E036/E435
is tilted during the application of the polarizing field. By this
means an electron can be transferred from one aqtivator level to the
other by tunne~lin& into the band and hence to the other level.
The internal field in the polarized layer due to non-uniformly
distributed charge is such as to retain the electron in the second
level indefinitely. The application of the reverse bias tilts the
band and the electron tunnels from the second level to the
conduction band and then recombines with the hole in the first level
emitting radiation. This-theory is presented in qualitative terms
only but could explain all the data reported'. For instance the
ultraviolet irradiation causes a double charged layer to form, which
partially excites the second type of traps before the reverse field
is applied thus reducing the signal. It is expected that all
materials showing the effect should exhibit electroluminescence
although the converse is not true. I.N.Orlov is thanked for the
specimens and for discussion of the results and also I.S.Zheludev
for continued interest in the work. There are 5 figures, 2 tables
and 7 references: 4 Soviet-blbc and 3 non-Soviet-bloc. The two
references to English language publications road as follows:
H.Kallman, B.Rosenberg. Phys.Rev., 97, 1596. 1955;
Card 5/,16~_
FRIDKIN V M , kand.fiz.-mat.nauk
Physical principles of the electrophotographic process. Vest.
AR SSSR 31 no.3:111-113 Mr 161. (MIRA 14:3)
(Xerography)
FRIDKIII, V.M.
Symposium on the physical bases of the electrophotographic
process. Usp. fiz. nauk 74 no-3:567-570 J1 161. (MIRA 14:7)
(Xerography)
S/020/61/138/004/006/023
B104/B203
AUTHORs Adirovich, E. I.j and Pridkin, V.M.
TITLE: The law of interchangeability and the quastateadinesi
of electronic processes in photoelectreta
PERIODICALt Akademiya nauk SSSR. Doklady, v. 138, no. 4P 1961y
820-823 1
TEXT: In the introduction, the authors otate that the law of inter-
changeability in electrophotography has been studied in a great number
of papers without solving the theoretical problems of the conditions
of its realization in photoelectrets. The inequalities n 41P411
Dn/3t IDP/Zt - ~Nl 'at I (04,xkl) (2) were obtained as necessary con-
ditions. n is the concentration of conduction electrons, N that of the
electrons on the adhesiori levels, P that of the holes on the activator
lavels, 14 that of the activator oenterst and M 2 the concentration of
the adhesion centors. 1 is the crystal thickness in the x-direction in
which the field is a pliedpK the dielectric constant, E the binding
P i
energy of the electrons'on the local levels of the i-th type. The
Card 1/6
24048
S/020J61/138/004/008/023
The law of interchangeability .... B104/B203
necessary and sufficient conditions were only defined for the case of
long exposure times, weakly excited donors, and weakly filled-up accep-
tors; n(x,t)% N(x,t) (O'kx< 1) (3). The relations (2) and (3) are
different forms of conditions for the quasisteadiness of the concentra-
tion of mobile charge carriers. The present paper generally studies the
necessary and sufficient conditions for the realization of interchangeabi-
lity in photoelectrets, and the relationship between the interchangeabi-
lity and the quasisteadiness of the kinetics of electron processes. the
author studies a crystal for which the energy spectrum and the scheme
of electron processes are shown in Fig. 1. The kinetics of the electron
processes in the exposure of the crystal in an external field E, is
described by the system
I.
ap + a = 0; a1v k2N + Pn (M3- N);
Y, PV Ft
OE 4A ap
P, ri k, (MI - P)- - OMP;
an I
ql&n E + qD a7X TP (4)
Card 2/6..
'1404
S A1/138/004/008/023
The law of interchangeability .... B104/B203
where ki a k I (T9I)v k2 w k2 (TtI), and I is thi light intensity. The
authors formulate the boundaty and initial conditions,'and subsequent-
ly represent, without limitation of the generality, the functions n
and j and the transition probabilities k 1 and k2 in the form n - In9
Ii ; k S I; ks a a I. Here, n and j are new unknown functions
9 1 2 9 9
of x and z, and also, possibly of the parameter 1. 81 and a2 depend,
in the general case, on I and T. Thus, the system
LP + IV
I = 0; L = - s,N + On. (M2 - N);
az 1i-C Oz (8)
OE 4x ap
j7 P'. S, (M, P) - Omgp; (8)
all P
qjLngE + qD -4 = 1g; p = P - N - Ing.
q
Card 3/6
2 40L,-3
S/020/61/138/004/008/023
The law of interchangeability .... B104/B203
is obtained for (4). On the premise that (a) for all types oVlocal
levels the rate of thermal production of frie charge carriers is
negligibly small as com ared to the rate of optical production.
(s, - const; a - const and that (b)-the terms with In ay be
neglected in ?8), the condition for the realization of6innlterchangeabi-
lity is satisfied t Q,
~~dx-wqS [P(x,z) - N(x,z)) dx - Q(z) (9). The
first of the above conditions reads exactly:
2:tn:kT V
1>2 1>2 se. s,
h2 -h,
Card 4/6
241048
3/020/61/138/004/006/023
The law of interchangeability ... 131041B20'A
In a thorough investigation kohe authors derive the inequalities
I'CPM 21'1' "A'2/'2' I"(P*D 2A nq 4,i1Mj (!5), and prove that (11) and
(15) are the necessary and sufficient conditions for the realization of
interchangeability in the polarization of a photoelectret. Similarly, it
can be shown that these conditions also hold for the realization of
interchangeability in the depolarization of a photoelec-.ret. Another
ezuivalent remsentation of these conditions readaj
n x,t)4_N(x9t j!Dn(x,t)/Dt-x.,~N(x2t)/9- (0,P1 M1 for a nonquasistationary case and contradicts the life-
time of photoelectrets and that of dark decays of the charge of an electr~-
photographic layer experimentally observed. KT is the thermal component '25
of'the/ejection probability of an electron from local or activator levels~
Card 1 2
C) :11 C
S/020/62/143/004/012/027
The isoopacity in ... B104/BI02
into the conduction band; ~j is the adhesion probability; M1 Is the ad-
T
hesion-level density. If in the crystal deep adhesion levels only (K
"d exist, the excitation of the crystal may be nonquasistationary.
In this case, from the above equation an isoopacity equation may be de2ived
which corresponds to experimental data. The depolarization of a crystal
is discussed in detail. There are 2 figures.
ASSOCIATION: Institut kristallografii Akademii nauk SSSR (Institute of
Crystallography of the Academy of Sciences USSR)
PRESENTEDt December 11, 1961, by A. V. Shubnikov, Academician
SUBMITTEDs November 1
1961
Card.2/2
FRIDKIN, V.M.; BARULIN, Yu.N.
Two mechanism of the formation of latent electrophotographic
images. Dokl.AN SSSR 145 no.1:78-81 Jl 162. (MMA 150)
1. Institut kristallografii AN SSSR. Predstavleno akademikom
A.V.Shubn!Lkovym.
(Photoelectricity)
FRIDKIN, V. it., ZHELUEEV, I. S., ABDULGAMOW, I. S.,
"Thsting of photoelectret conditions in activating alkali halogen crystals."
report to be submitted for the 1st Intl. Congress on Reprography, Cologne,
west Germany, 14-19 oct 1963
-.1. also submitted:
* . . .with BUORTYMM; V. 1., 10 Electrophotogranhy on silver chloride crystals.0
* . . .with ANFILOV, I. V., "The present state of development in the electro-
photographic field."
q)/S4r (m)/EWP(B)/MS A~M/ASD- JD
___;!JAN~_6 Lie ( 7
ACCES$jON.Nili U30022h8 s/29hi/63/ool/ooo/o353/6359
AUTITOkS: Fridkin,-V. Nozov, V. NO'
TIT LE~ The role of barrier contact in radiation mechanism of Zns-fiIM3
SOURC;: Optika i opoktroskopiyaj abornik statoy. v. ls Lyumineateentaiya.
Mo3co~, Izd-vo AN SSSR, 1963p 353-359
TOPICZAGS: kinetics, ion,, negative charges,oorona discharge, quenching
',ABSTRACT: T~e kinetics of radiation in a negatively charged film of ZnS-Cu,.Cl
was investigated, first under the action *of direct electrical impulses of variable
duration and then under an opposing field of linearly increasing potential. The
negative ionic chargo on the film was produc ed by corona discharge in air. Fur-
thermore, to study the relation between qu*enching and electron redistributions in
energy levels, the film was charged and pre-irradiated by tte above time-dependent
opposing electric field with linearly increasinga potential. Curves were obtained
for radiation intensity as a function of time with different, positively charged,
variable impulses and linearly increasing potential as parameters. The results
are interpreted by means of a concept whereby the adsorbed ions on tte. film'surfac
form a space charge. The presence of this space charge then forms ajurfaee
Card 1/2
L 19472-63 .... ... - -
ACCESSION IM: AT30022h8
;barricr. This'is' connected to ions in ionization levels by neans of electrons
tunneling thr'oueh the sur.face barrier (first transition) and to radiation cente'ri!
(third transition). "Thd-iut~~r'is gratoful.to I. N. Or1M F. F. Vollkonshteyn'
A. M. Bonch-Dr ~evich'.. Orii. art. has: 8 ffFwes.
ASSOCIATION: none
SUBMITTEDs 20jan62 00
DATE ACQ: 19MaY63 ENCL:
SUB CCDE: PH NO REF SOV; 007 OTHER: 003
VP
AUTHOR:
TITLE:
S/18 63/005/001/057/064
B104XB186
Fridkin, V. M.
Peculia 'rities of longitudinal photoconductivity of crystals
with strong absorption
PERIODICAL: Fizikh t.verdoFo tela, v. 5, no. 1, 1963, 553--556
TZXT: On the basis of.studies by K. Hecht (Zeitschr. f. Phy*s., 77, 235,
1932), F. Stdckmann (Zeitschr. f. Phys , 128, 185, 1950), B. Gudden and
R. Pohl (Zeitschr. f. Phjs., 16, 170, ;923), more general expressions for
the dependence of the primary photocurrent on the field strength are
studied:
q WWnq W
11 e- dx
0
d
OW
qwno + -e--7- W
d W
Card 1/3
S/181/63/UO5/001/'057/064
Peculiarities of' longitudinal... B104/B186
e w dx
0
d (2).
qwna ae e& W ( We
d W- a 1 .01
IvrE is the carrier shift in the band, n0 is the concentration of free
carriers, and q is the elementary charge. These expressions snow that in
the general case i+ > i-, i.e., the photocurrent is unipolar. For weak liCht
absorption (d/a cm% (IA= mobility and 'To life-
time of a hole),, The maximum charge of the photoelectret, obta4ned b i tegrating..,:
-0 With
the discharge current with respect to time, proved to be - 10 cottl
increase in polarizing fieldp the charge density of the photoeleotret increased,
"The authors express their sincere thanks to Academician A. V. Shubnikov for
proposing this topic and for discussing the results of the works" Origs arts bast
6 figures.
ASSOCIATION: Institut kristallografii AN SSSR (Institute of Crystallography AN
SSSR)
SUBMITTED: O9Apr63 DATE ACQs l9F*b64 ENCLs 00*
SUB CODEs PH NO REF SOVt 006 OTMI WS
Card 2/2
ACCESSION NR: AP4043192 S/0070/64/009/004/0564/0565
AUTHORS: Abdulgamidov, S. A.; Zheludev, I. S.; Fridkin, V. M.
TITLE: On the kinetics of the formation of the photelectret state
in additively colored KC1 single crystals
SOURCE: Kristallografiya, v. 9, no. 4, 1964, 564-565
TOPIC TAGS: potassium compound, photoelectret, single crystal,
color center, F center, polarization, depolarization
ABSTRACT: The tests were made with single crystals having an F-
16 -3
center concentration -10 cm with an aim at checking on the
theoretical deductions of E. Adirovich (Fiz. tv. tela v. 3, no. 7,
2048, 2050, 1961). The measurements were made with plates having
area -1--2 cm2 and thickness -0.15 cm, using barrier contacts to
prevent the injection of the carriers from the electrodes into the
Cardl/4
ACCESSION NR: AP4043192
crystal (mica liners). Illumination during the polarization was
with monochromatic 546-nm light. The charge was measured by the
depolarization method, with the photoelectret illuminated with
the undecomposed light from a mercury lamp and with integration of
the depolarization current. The time variation of the photoelec-
tret charge was found to be exponential. The reciprocity law was
fulfilled over the entire range of light intensity employed. The
charge density was found to be linear in the polarizing-field in-
tensity. It is concluded on the basis of these results, and also
results by others, that the kinetics of formation of the photo-
electret state in colored alkali-halide crystals, as well as their
depolarization, are in accord with the deductions of the phenomeno-
logical theory. "The authors thank L. M. Shamovskiy for supplying
the samples of additively colored single crystals." Orig. art.
has: 1 figure.
ASSOCIATION: Institut kristallografii AN SSSR (Institute of
Card 2/4 ,
ACCESSION NR; AP4043192
Crystallography, AN SSSR)
SUBMITTED: OlNov63
ENCL; 01
SUB CODE: OP, SS NR REF SOV: 002 OTHER: 004
A
Card 3/4
ACCESSION NRs AP4043192
min
Card 4/4
ENCIXGUREs 01
Dependenoe of the charge of a photoelectret on
the illumination, following illumination by
different light intensities (additively colcred
single crystal KC1, T = 120K). The numbere
refer to different illuminations.
ABDULGAIMOV, S.A.; ZIIEIIJDEV, I.S.; FRIDKIN, V.M.
Kinetics of the formation of the photoolectret state in
additively colored KC1 single crystals. KristallografiJa
9 no.4:564-565 JI-Ag 164.
(MFIA 17: 11)
1. Institut kristallografli AN SSSR.
M;-nt. ar. I r~m in d#3 y-i rv orr u ,r,
re a Ir. ph-D Io
164,
Fiz. Lver. tels 6 rv).10;:'4~`T 31'~5
i ~ Ir s t k T-.. f~ lw17 ;g ro
'U I ~A ,
KISLLEV) V.P.; 110SPELOV, V.V.; F~RIDKUII, V
Spectral curVOS of the d-polarization of silver chloride cryawls.
Zhur. nauch. i prikl. f0t. i kin. 9 no.5:357-359 13-0 164.
('411d, 17: 10)
1. Institut kristallografii Ali SSSR i Fizicheskiy faku-11tet
Moskovskogo gosudarstvennogo universiteta imeni Lomonosova.
L 41341-6f)
-71~~--If/PU-4 IJP(C) JD/V,;I/JG
Pf :4
ACCESSION MR: AP3000741 S/0020/~3/150/003/0511/0514
MUM: Sugriyenko, V. I.; Fridkin, V. 14
TITLE: Electrophotorpraphic isoopaque of ACG1 uingle crystad
SOURCE: PH SSSR- Dokladyt 1501 no.3# 511-514
TOPIC TAGS: electiophotographic i-soopaque- electrostatic photography, ail
chlorid iscopaque
I ABSTRACT: The form of the depolarization isoopaque for ArCl sin,1:1e crystals
j with difrerent concentrations of callo5dal silver has been st.i,ya+ 'ed'.
Plastically deform d crystals were used in the form. o~_ZQ511- 0.25 rum thick
heat treated at 4000 for 6 hr. The concentration of colloidal sUver was
f regulated by exposures to white liaht from a SVD'3h-250 lamp, after which
absorption curves at room temperature-were plottrd. The photoelectrat
cardition was created by photopolarization at the temperature of liquid
nitrogen in a field of 3 kv/= with monochromatic 11(~ht of 365--atllimicron
uavelenath. The polarization vas carried out by exposures to grean ligeNt
of various intensitie3. In confirmation of results obtained earlier by
'eyklya-- (P. V. Meyklyarp DAN, 31j 226 (1941), it was found that exposure
Card
L 41Z41-65
ACCESS1011 MR: M000741
increases cause increases of' both the concentration and the size of silver
particles. The Increase in particle size is characterized by deviation
from the matual substitution laug the particle diarrmter at a lViven energy
growing smaller wit th higher lif~ht intensities. The results, in geteral,
confirm an earlier suTgestion by Fridkin (V, ff. Fridkin, DP11, 143, 825 (19A:!)
concerninj the machanisim or the breakdown of muti;aj substitution in the
formation of latent electrophotoiraphic imajes within the bilh 11~ht-intena:.%,r
ranc~e and explain the same phenomenon in experiments by Vayklyu. The thao-y
of Mott and Gurney, therefore# remains valid without any 5pecial qualificatLons.
Alsop the analogy between latent photoayaphic and latent electrophotoc~raphi:
ima-es in silver halid compounds appears to P,,o deeper than was [Weviously
assinned. The paper was presented by Academician A. V. Shubnikov on 29
December 19A2. "The authors thank L. P. Mellnichuk for ausistance in the
formula measurements." Orig. art. has: 1 table arA 3 figures.
PSSOCTATION-. - Odegakiy gaadarstvanW universitat im. r. T. Rachnikova (Odessa
State Uriiversi~y); Inatitut kristallografti Akadcmii nauk SSSR (Imtjj_vte cr
Grystallographyj_Aq~4~ ~Scien~ceq._SSSR)
4
.1 SUBMTED: 25Dec62 ENCL-. 00 SUB CODE:-.
NO REF SOV: 008 OTHER; 004 ATD MESS: 202jj
Card 2/2
L~58927-65 EWT MAW (N)/T/WP M /EEG (b)-2/EWP W/E11A (c) PI-4 -IJP(c) J111GG
ACCESSION NR: AP5011525 UP,/0020/65/l61/005/!060/l0b62
AUTHORS: Gulyamov, K.; jqakhovitskaya, V. A.; Tikhomirova, N.A.;
Fridkin, V. M.
- ------------------
TITLE: Anomalously large effect of pressure on the optical and6'
Jerroelectric properties of SbSI single qrygka_2s
Vf 0
SOURCE: AN SSSR. Doklady, v. 161, no 5, 196 k1060-1062
51
q
TOPIC TAGS: antimoni compound., single crystal, ferroelectric proper-~~,
uy, pre a surie-_ dependence, Curie poin ) electric field dependence
-----I--ABSTRAOT:-~--EarXier-ii.vestiga-tio: 7,o!7_theoptica.land Cerroelectric
th- no us mn
properties of SbS1 Single crystalal and have lead to
that the coefficient dE./dp (E width of forbidden band, p
pressure) lias tin anomalously large value. To check on this assump-
tion, the authoro have undertaken-to determine de /dp directly ty ;7':
measureing the shift of the edge of intrinsic abs6rption under the
influence of hydrostatic rea-sura. The-results, which are MUStra
p
ted in Fig. 1 of the Ene-losure, show that single crystals SbSI have
Card 113
T 1)/EWT(=)/T/E;,WP(b)/
VMP(t)
J-D/JG T/
JJUGESSION UR: AP008663
AUTHORSt Pospelov,V
V* Frl~d~r, T. K.
TITLEt The probl6m, of the mechanism of forming tfte2hq~oale~ltrtconditioa in
monocrystals of certain halides of figvei~ wA of alkaline wbtls
SOME z - Zhurna. n=bnV i. prikladmor 20
ro, grefii i kinewtograflis v# 20, co* 2#
1965j, 3.18-123
TOPIC TAGSt__ Studies of the ion- adsorption mohmism. and of - the formation of - -
heuero- and lwmopotentialz ia arptals of silver ba3ldes and Islides cC alkaline
als are presented.- Experiments were berfomed with sodium ard potassiun chlorldi
C.-,7stals of dinws;Lona 10 x 10 x I ma and with silver calorld-a plates 15 x 15 x
0.5 mm in 'size. The expertwatal methods used were those do.-cribed by P., 9,
Tartakovskiy (Vautrannly gotoeff" v. dielektri~hs Crostekhteorlzdatt H,,_ 1960);
by V*_ X. Bugrienko (Fizika tvera6go tau., 1962.* 4t No, 21., 33S2)jq and by V. F.
Nisolovp V. V. Foupelovs and V* He Fridkin (Zh, n=chne i prJJclo fotogro i
kinematcgr,, 1964,, 99 357)e Measurements were mzdo of the speotral dist:vibution
*Z adsorption -and of direct ioa f1w fgr both, the UaGi and K(;l cases. 'r23. rosults
Vero plotted as aluma in Figs* 1. and 2 on the Zaclosu", UjU= mwaurm=ts
Card I/V_1 - __ - -_ I:
- 1 - ..
L 52516-615 EVIT( I Pz-6 IJP(;) Jb/AT
ACCESSION MI. 'A-F5010703 uR/cjj.81/65/OO7/0*/lO37/lO42
AUTHOR: Gulymov, K.: TMomirovag FTIdkin, V. M.
TITLE: Effect- -of high hydrostatic:Erescure -on the -photo-.onductivity- of CdS single
crystals
SOURCE: Flzlka tverdogo teIlap ve 7, no. 4j 1965, lo37-lo42
TOPIC VM cadmium:sulfide, IWOrostatic pressures photoconductivity. nonequilib-
rium carrier, carrier lifetime
ABSTRACT; The purpose of the-investigation was to make direct, mea&uxementa of the
lifetimes of the carriers as a function of the pressure, and to obte-.n si=ltane-
ously information on the influence of pressure on the adhesion levela. The authors
measured both the stationary photoevrrent and the phenomenological lifetime of
aingle-cryatml 03 in the prbszure , Interval up to 15 1,000 atmp using the b! gh-
pressure ch=ber shown In FIg. 1 of the Enclosure. A st:&ndard test procedure was
used. The theory underlying the determination of the trile and phenomenological
lifetimes of non-equillbrium carriers as functions Of the pressure Is lbriefly pre-
'Cord
L 52516-6!5
ACCESSION NR: AP50.10708.
sented. The test results show that the variation of the photoconductIvity with
pressure is due to changes in both the true and phencmenrological lifetimes of the
carriers. The information concernIng the character of the carrier adhesion levels:
is not conclusive because of the narrow range of variation of the light intensity
in the experimenta. "The authors thank M, K. Sheymkman for %mluablF. remarkE."
Orig . firt. has: 4 figures and 9 fdrmul,~-s.
ASSOMITT-01f: Institut, krist-allografti, AN S6SRj Moscow 11natitute of' Crystalla-
G"-Phy AN 80SR)
,Sep6k-
ra SY,7: o=t oo4-
Ord
M
L -9259-66 EVIT(I )/EliIT(m)/EPF(n)-2/EI!I.A(d)/EVIP(t)/T/E'.'/P(k)/r:','IP(b)/Ee/A(c) lip1c) ,
ACC NRs AP5022712 JD/0/f 111C~OT SOURCE CODE: UR/0101/65/007/009/2723/2725
AUTHOR- Gulyamov~, K.; Tikhomirova, A.; Turyanitsa, 1. D.; F~!~
ORG: Institute of Crystallography AN SSSR. Moscow (Institut kristallografa'i AN SSSR)
TITLE: Photoconductivity of HgI2 single crystals under high hydrostatic pressum,
11 S
tela7v, I
SOURCE: Fizika tverdogo no. 9, 1965, 2723-2725
2) , !/ U , -~- '~__
TOPIC TAGS: mercury compound, iodide, single crystal, photoconductivity, pressure
effect, high Rressure research -
21) d1t1' '5 k.,
ABSTRACT: Photocurrent was studied as a function of pressure up to 17,000 3tmosphere
at room temperature in single crystals Of Hg12- Measurements were made on tetragonal
single crystals (red mercuric iodide) grown from solution. Curves are given showing
photocurrent as a function of incident wavelength for various hydrostatic pressures.
The long-wave maximum corresponding to the fundamental absorption edge is shifted in-
to the longer wave region as the pressure is increased. This maximum is located at
580 mu (E = 2.14 ev) at atmospheric pressure. The change in energy with pressure
9
conforms to the law d11.1dP = -(9 ' 0.7).10-6 ev/at. The photocurrent first decreases
with pressure increase, passing through a minimum in the neighborhood of 700 atmos-
pheres, and then increases with pressure up to 12,000 atmospheres. At about 13,000
atmospheres, a phase transition Is observed which is accompanied by a drop in photo-
Card 1/2
ACC NRi APS022712 -.0
urrent. Thus the minimum at 7000 atmospheres is not due to a phase transition and
is apparently caused by a change in carrier lifetime. This hypothesis is used as a
basis for a model explaining the complex relationship between photocurrent and pres-
sure for this compound. Orig. art. has: 4 figures, 2 formulas.
SUB COM 20,07/ SUBM DATE, OlApr6S/ ORIG FXF: 005/ OTH REF: 004
2
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SOURCE CODE: UR/0181/66/008/001/0Ii48/.015-1
AUTHORS: Nosov, V.-N. Fri.dkin, V. M
ORG: Institute of Crystallography AN SSSR,_!joscow (Institut
kristallogram AN SSSR)
TITLE: Photoconductivity and lifet1me of nonequilibrium carriers
at the phase transition in SbSI
73
SOURCE: Fizika tverdogo tela., v. 8., no. 1, 19661 148-151
TOPIC TAGS: photoconductivity, antimony compound, ferroelectric
material, forbidden band, semiconductor carrier, phase transition,
electric conductivity, temperature dependence, activation energy,
Curie point .
ABSTRACT: This is a continuation of earlier work (DAN SSSR v. 161
lo6o, 1965), where it was observed that the temperature coefficient
of the change of the forbidden gap in SbSI has an anomalously large
value near the phase transition point. In the present investigation
the authors measured the temperature dependence of the electric con.. Z.
Card
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ductivity, the photoconductivity, and photocurrent carrier lifetime
in SbSI near the phase transition, and observed the anomalies occurr
l
ring near the ferroelectric phase transition point. The crystals
were grown from the gas phase in the form of needles. The electric
conductivity and photoconductivity were measured along the two-fold
ferroelectric axis, which coincided with the axis of the needle. The
lifetime was measured by a standard pulsed light modulation technique
The measurements were made In vacuum in weak fields. The pbotocurmit
was measured at the maximum crystal sensitivity. All quantities ex-
bibited anomalous changes -near the phase-transition point. The ac-
companying change in activation energy of the donor level amounted to~
1-0.2 eV, which was three times larger than the width of the forbidden
.band. To check that the anomalies are indeed connected with the de-
crease in the activation energy, the temperature dependence of the
electron lifetime was investigated near the phase transition, and
ilikewise exhibited an anomalous increase near the Curie temperature.
If the anomalies are attributed to the change in activation energy,
it can be assumed that the effective mass.an'd the carrier mobility
remain unchanged. Theoretical calculations of the variation of the
1SOrd___ -?L3
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'measured quantity show agreement with experiment in the case of the
!conduction and dark current- ':tit not in the caso of the photocurrent.
!This disparity may be due to the fact that the lifetime measured was
not the true one, but the phenomenological one. The authors thank
N, A. LNakhovitakaya for supplying the 6rystals and 5. 1. Volobuyeva
.1for taking part in the measurements. Orig. art. has'. 3 figuresT'
4 formulas, and 1 table.
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ACC NR. AP6008751 SOURCE CODE: UR/0386/66/0)3/006/0252/0255-
AUTHOR: Fridkin, V. m.,
ORG: Crystallography Institute, Academ7 of Sciences~SSSR (Institut kristallografii
Akademii nauk SSSR_T__
TITLE: Some effects due to electron-phonon interaction in phase transitions occurring
in a semiconductor ferroelectric
SOURCE: Zhurnal eksperimentallnoy I teoretJcheakay fiziki. Pialma v redaktaiyu.
Prilozheniye, v- 3, no. 6.. 1966,, 252-255
TOPIC TAGS: ferroelectricity,, paraelectricity, semiconductor carrier, second order
phase transition, Curie point, electron interaction, phonon interaction V
'- '-1 i~c~`
ABSTRACT: This is a continuation of the author's earlier studies of ferroelectr c
phase transitions In semiconductors, especially of the AVDVICVII type~_(bokl. AN SSSR
V. 1bl, .1ObO, 199-5). In this paper it is shown that the presence of a relative.Ly high
density of nonequilibrium carriers in semiconducting ferroelectrics leads to several
new effects which affect the behavior of the semiconductor near the phase transition
region. It is shown in particular that a sufficiently high nonequilibrium-carrier
density causes the Curie point to experience a shoft whose magnitude and sign are de-
termined respectively by the magnitude and sign of the constant. The latter can be
determined from the relation E - E,0 + aP2 by investigating the anomalies of the for-
bidden gap Eg or of the 16'emper�turegcoefficient dEq/dT in the phase transition regione
(Y
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These anomalies are considered separately for the case of a second-order phase transi-
tion and for the case of a second-order phase tranistion close to the Curie point. It
is shown than in both cases the coefficients of the temperature and pressure varia-
tions of the width of the forbidden band experience finite discontinuities whose signs
and magnitudes are determined respectively by the sign and magnitude of some constant.
This agrees with experimental results by T. Mori et al. (J. Pbys. Soc. Japan v. 20,,
281, 1965), although the numerical value of the constant was not estimated from these
measurements. Author thanks 1. M. Lifohits for reviewing the manuscriprt and for a
discussionp and Re A. Buris a-nd-A-.-P-.-1FR-rWuk for numerous remarks. orige art* has:
.12 formulas.
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AW WKi A770013 SOURCE CODE,,.
Up/o386/66/oo4/oi1/o461/0464
AUTHOR: Fridkin v. M. Gorelcm., I. M.; Grekav,, A. A.; Lyakhavitakaya, V. A.; Rodin,
A. 1. =2-4-j-
ORG: Institute of C~rystallograpbyq AcadenW of Sciences SSSR (Institut kristallografii
Akademii nauk SSSR)
TITLE: Phase boundary in ferroelectric SbSI as the analog of an electric domain in a
semiconductor
SOURCE: Zhurnal eksperimentallnoy i teoreticheskoy fitiki. Pislma v redaktsiyu.
Prilozheni,ye., -v. 4., no. U., 1966., 461464
TOPIC TAGS: semiconductor single crystal, antimony compound, ferroelectricity~ domain
boundary.. phase boundary
ABSTRACT: This is a continuation of earlier work (Dokl. AN SSSR Y. i69, no. 4, 810,
1966) where a new optic method of observing the phase transition in single-crystal
SbSI was reported. The method was used in the present work to trace the motion of the
phase boundaries in SbSI crystals grown from the gas phase in the form of needles
(1 x 0.1 x 7 =). The needle axis was the c axis of the crystal. The observation was
made in transmitted light through parallel pincacoid (100) faces in a direction per-
pendicular to the c axis. The tests showed that a constant electric field applied to
the crystal causes the interphase boundary to mave toward the cathode at a rate 10-3
cm/sec. Under certain experimental'conditions (in the presence of a temperature gra-
ACC NRs
dient in the absence of an external field), undamped oscillations of the interphase
boundary were observedj accompanied by electric oscillations in the external circuit
of the crystal. It is shown that the observed displacements are connected with motion
of ferroelectric regions in the crystal, analogous to the motion of electric domains
in a semiconductor. While this analogy does not fully determine the concrete mechan-
ism or the direction of motion of the interphase boundary, it does provide an explana-
tion for both the motion itself and its oscillations. It is also shown that the
period of the oscillations agrees with the value that would follow from the MaxweU
time constant for SbSI. Okig. art. has: 1 figure.
SUB CODE: 2q/ sm DA=: o9sep661 om rw: oo4/ om Rw: oo4
~CC NR- AP6015494 SOURCE CODE: UR/0191/66/009/005/1620/1621
AUTHOR: Varkhovskaya, K. A..; rridkin, V. K.
ORG: Institute of Crystallography, M SSSR, Moscow (Institut kristallografli AN SSSR)
TITLE: On the anomalous temperature shift of the Intrinsic abs4ptlon edge ok DaT103
.single crystals In the phase transition band
SOURCE: rialka tvardogo tole, v. 9, no. 5, 1966, 1620-1621
TOPIC TAGS: absorption band, absorption edge, crystal absorption, barium titanate,
forbidden band, forbidden zone width
ABSTRACT: The purpose of this study was to investigate the behavior of the intrinsic
absorption edge of BaTiO3 in the transition from the ferroelectric (tetragonal) to the
paraelectric (cubic) phase. Five specimens of BaT103 single crystals (Curie point 0 i
= 1050C, forbidden band width 0 9 a 3.2 ev at room temperature) were investigated on a..
Sf-4A spectrophotometer. It was fbund that in the ferroelectric and In the paraelec-
tric phases there exists a linear relationship between the width of the forbidden bani
9 and the temperature with an equal coefficient, namely
dE
V
-y=
-(7 zt 0.-5) - 1(.)-4',,,/d,g
d
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0-
Hear 1050C there is a phase shift, accompanied by an anomalous decrease of the Width.-
of the forbidden band. A temperature hysteresis with a width of the hysteresis loop a
1-20C was also observed. It appears that the change of the width of the forbidd n banW,
is related to the behavior of the heat capacity of BaTL03 in the phase transition 14
~band. The authors thank Dr. Arend who made the BaT103 crystals available for the ex
periments. Orig. art. has:_r_1F9_Uie-
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ACC NR, Ap6018559 SOME CODE: wV01811661008100611W7119
AUTHOR: & -14 GUIY&Movl 1K.; IqakhovitLkMj V. .; Nosovj, V. Tikho- Id
- Id Rp V -
MG: Institute of CrysUllogmpbyp AN SSSR, Moscow (Institut kristallografii AN SSSR)
TITLE: Anomaly of optical properties of ferroelectric SbSI the phase-transition
region . I,/ ~_T t~
SOURCE: Fizika tverdogo te3.&, V. 8, no. 6, iW, 1907-19o9
TOPIC TAGS: antimorw compounolp phase transition, Curie point, ferroelectric property,
forbidden band, pressure effect, paraelectricity, electron interaction, phonon inter-
action, temperature dependence, absorption edge 10r4_ PAa&4-~r'
'ABSTRACT: This is a contimiation, of earlier work (DAN SSSR v. 161, lo6o, 1965), where
4an anomalously large shift of the intrinsic-absorption edge vas observed in SbSI
,single crystals with increasing pressure. The present study is devoted to a more de-
tailed investigation of this shift, and discloses that the anomaly appears only *in the
vicinity of the phase transition. The authors measured the dependence of the width of
the forbidden band Z
on the bqdrostAtic pressure p and the temperature T in the phase.
trsLy, ition region* Ke crY6t&3.8 were grown from the gas phasej, the width of the for-
bidden band was determined by measuring the shift of the maximx= of the yhotocurrent,
and the high pressure was produced with apparatus described elsewhere (M v. T, 4.,
3965). The pressure van measured with a resistance manometer and the temperature was
2
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AUMDR: Gulyamov, K.; Tikhomirova, N. A.; Turyanitsa, I. D.; Fridjdj4_y. M.
ORG:.-Institute of Crystallography, AN SSSR, Mosoow (Institut kristallogafii AN SR)
TITLE: Photoconductivity of Sb13 and W3 at high hydrostatic pres-
sures T~? 11 -17 11
SOURCE: Fizika tverdogo tela, v. 8, no. 7, 1966, 2084-2086
TOPIC TAGS; phoLo,.xxiductivity, spectral distributicn, anti:xamy --avVou-nd, bismuth 0OW-1.
Puund, iodide, fovijiddea bmd, pressurc, eff=.s car74_cr lifetim, electivn mixgnbina-
tion
A0.11MA : Rlomijoledvd! cLysLcLls w,_m, UG;,.n, fmm, t1ra gaz 2-n the form ~-f rlet-A
111k:asur.Lng.,G.1 x 0.5 an and their photocondu~tivity-was imestigated at pressures up
to. 14 , 000 'dLnrjE;Vheras at room teq)erature. The masummants mrs made in a high-
pressure multiplicator using a procedure described earlier (FIT v. 7, 10379 1965 and
earlier). Me tesLr, yielded plots of the spectrul distribution of the phato-curTent,
the vuldtion of tle_ width of the forbidden gap with prussure, and the pressure de-
pendence of the relative density of the dark c*urrents Mic tests have shown that the
i1exinki of Lhe spectrta dibtribution of tho photocurTcnt chifts toward longer reve-
lu- %Lhs for boLh v4yutals. M-ie press-,we dependence of the photo-current was also mea-
surved. In Sb13 a rstrong increase in the photocument is accompaned also by an
cit:cL,,e. bi Lie dcuk cuixtait, whereas in WIT., t~_- dari-, --ur-.--nt da=,~mseq un-V-r
Card 1/2
251210- FRIDKIN, V. YA. Kepillyarnaya Set I legkogo L EE Vliyanie Na Kharakter
Rentgenovskogo Izobrozheniya Legkikh. Terap--v-t. Arkhiv. 1949 4-S. '110-38.
SO: Letopis' No. 33, 1949
"Capillary Network of the Lungs nnd Its r;ffect on the Character of the
X-Ray Picture of the Lungs.." Terap/ Arkhiv., No.4, 1949
Central Sci. Rea. Inst. Roentgenology and Radiology im. V.M.Molotov
FRIDKIN, V.Ya.; ZHISLINA, M.M.
Certain characteristics of the X ray picture of lobar atelectaids.
Vest.rent.i red. no.5:14-20 S-0 '53. (MLRA 7:1)
1. Iz kafedry rentgenologii (zaveduyushchiy - professor Yu.N.
Sokolov) TSentrallnogo instituta usovershonstvoyaniya vrachey
na baze bolluitsy im. S.F.Botkina (nauchnyy rukovoditell -
sasluzhennyy deyatell nauki professor S.A.Raynberg).
(Lnngs--Collapse) (X rays)
cV( , I 'ti
FROKIN, Y.Ta., dots.1 RYBAKOVA. N.I.
oentgenanatomical comparison of bronchial and pulmonary charges
in primary lung cancer [with summary in English). Vop,onk. 3 no.4:
430-434 '57- KIRA 10:11)
1. Iz 2-y kafedry rentganologii i meditsinskoy rediologii (zav. -
prof. Yu.N.Sokolov) TSentrallnogo instituta usovershenstvovaniva
vrachey (diro - V.P.Ioebedeva). Adres avtorov. Moskva. TSentrall-
nyy institut usovershenstvovaniya vrachey.
(LUNG NNOPLASKS, diagnosis,
x-ray & anst, changes in lungs & bronchi, comparison (HUB))
D,o,
FRIVIN, V.Ya.~Oae Med Sci -- (diss) "Dite for
of the blood system of the lunFs."
Mos, 19581, 21 pp (State Sci Ile:; Roengcno-~qdinlogy
I
Inst -) * RSFSR) 150 CoPies (KL, 2~-58, 109)
- 71 -
FRIDKIN, V.Ya.; ROZENSHTRAUKHj L.S.
Bronchial tree in lobqr and zonal atelectanis and pulmonary cirrhosis.
Vop.onk. 5 noilOs425-431 T., (MIRL 13sl2)
(LUNGS-COLLAPSE) (PULMONARY FIBROSIS)
(BRONCHI)
FRIDKIN, V.Ya.; GELISHTHYN, V.E.; ORWY, V.11. (Moskva)
Hlectrok,moo~aphy in the diagnosis of lung cancer and mediastinal
tumors. 3(lin-med. 37 no.8:106-112 Ag '59. (MIRA 12:11)
1. Iz pervoy kafedry rentgenologii t meditsinakoy radiologii
(zav. - xnalushennyy deyatel' nauki prof.S.A.Raynberg) i pervoy
latfedry terapii (sav. - deystvitel'nyy chlen AM SSM prof.H.S.
Tovei) TSentral'nogo instituta usovershenotvovaniya vrachey
(dir. V.P.Lobedeva) na baze Bollnitsy im. S.F.Botkina (glavnyy
vrach - prof.A.H.Shabanov).
(LUNG, neoplasms)
(MEDIASTIMM, neoplasms)
(KY740GRKM)
ROZZNSETRAUCKH, L.S.; SOKOLOV, Yu.H.; FRIDKIN, V.Ya. (Moskva)
On a unified nomenclature for the bronchial and vaocular oystems
of the lungs. Veot.rentj rad. 34 no.6t3-11 N-D 159.
(LUNGS anat. & h1itol.) NIM 13:5)
SHEKHTERt I.A.t prof.;. FR-I-DKINv V,.Ya., 4oktor mad.nauk
"BronchiographyN by IU,N. Sokolavv L.S. hozenahtraukh. Revioved by
I.As Shekliterp V.IA. Fridkin.- Veot. rent. i rad. 35 no. 2:811-90
Mr-Ap 160. f (MIRA 14:2)
(PONGHI-RADIOGRAPHY) (SOKOLOVt IU,PJ) (ROZENSHTRAUKH, L.S.)
FRIDKIII, V.ya.;- zHUSLINA, M.M.; GELISIITEYN, V.Ye.
Acute pulmonary edema; clinical roentgenological comparisons. ralim.
med. 38 no.5s72-80 My 160. (MIRA 13112)
(PULMONARY EDEPIA)
FRIDKINq V.Ya. (Moo'kvaq Pyataitakayw ul.p d.49, kv. 25)
Radiographic picture of the mnal.1 and mimite pulmonary blood vessels.
Vest. rent. i rad. 36 no. 1:28-33 Ja-F 161. (MIRA 14:4)
(LUNGS-RADIOGRAPHY)
FRIDKIN, Veniamin Yakovlevich;.'~ENTSIANOVA., V.14., red.; KOROLEV,
(Anatomicofunctional foundations of the X-ray picture of
the lungs] Anatomo-funktuionallnye osnovy rentgenologiche-
skogo, izobrazheniia legkikh. Moskva, Medgiz, 1963. 189 P.
(MIRA 16:11)
(LUNGS-RADIOGRAPHY)
FRIDKIN, V. Ya., doktor med. nauk
Review of L.S. Rozenghtraukh and II.I.Rybakov's book *Clinical
X*ray diagnosis of paragonimiasis."'Vest. rent. i rad. 38
no.5:74-75 S-0163 (MIRA 16tl2)
WIDV, Yuvenaliy Aleksandrov-ich; FRIDKIS,-- Z.-I., retsenzent; BOGOSIAVETS,
N.P., takhn.red.
[Air and electric-&rc metal cutting] Vozdushno-elektrodugov&is.
reaka motallov, Moskva, MaBhgiz, 1962. 103 p. (KEU 15:5)
(Electric metal cutting)
VAYIER, Sh.A., inzh.; VAYNER, S.A., inzh.; U"SOLITSLV, V.A., inzl,.;
FOKIN, V.M.p inzh.; SOTSIKOV, N.I., inzh.; ZAIMM11G, 3.1111., Inzh.;
SIGAMVP V.S., Inzh.; BRONSHMI), L.1%, inzh; YUNGER, S.V.p kand.
tekhn. nauk; BATYREV, A.V.p Inzh.; BnDv4KIN, YU.F., inzh.;
RYZBKDV., N.I., inzh.; YAKHNIV, A.L., inzh.; FRIDKIS, Z.I., Inzh.
Furnishing the SGU gas-cutting machine with a FOS-4 scale
photocopying control system. Svar. proizv. no.9:34 S 165.
(WFA 18:9)
1. Vsesoyuznyy nauchno-issledovatellskiy institut tekhnologil
mashinostroyeniya (for Sh.Va~nor, S.Vaynert Usolltsev, Pokin,,
Sotskov). 2. Volgogradskiy zavod im. Petrova (for Zandberg,
Sigarev., Bronshteyn). 3. VPTI khimnefteapparatury (fcr Yunger,
Batyrev, Bodyakin). 4. Ural.skiy zavod tyazhelogo mashinostroyeniYa
imeni Sargo Ordzhonikidze (for Ryzhkov, Yakhnin, PrIdkis).
Fri IDIA14D
see also ITUDLYAND